JP2003177428A - Electro-optical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a light-dark pattern caused by a pattern portion comprising wiring and circuit elements provided in a picture frame region from being projected near the edge of a display image in an electro-optical device such as a liquid crystal device. <P>SOLUTION: The electro-optical device is provided with, on a TFT (thin film transistor) array substrate (10), a display electrode (9a) disposed in an image display region (10a), and a pattern portion consisting of at least one of wiring and a circuit element connected to the display electrode (9a) directly or through a pixel switching element (30) and provided in the frame region which defines the periphery of the image display region. The electro-optical device is further provided with a lower shielding film (501) for covering at least a portion of such a pattern portion from the TFT array substrate side in a part of the picture frame region. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of electro-optical devices such as liquid crystal devices, and more particularly to an electro-optical device having a frame light-shielding film that defines an image display area, and such an electro-optical device. It belongs to the technical field of electronic devices.

[0002]

2. Description of the Related Art Electro-optical devices of this type include display electrodes such as pixel electrodes and stripe electrodes, various wirings such as data lines and scanning lines, thin film transistors (hereinafter referred to as "TFT") and thin film diodes for pixel switching. An element array substrate on which switching elements such as (hereinafter appropriately referred to as TFD) are formed, and an opposite substrate on which stripe-shaped or whole-faced counter electrodes, a light-shielding film, and the like are arranged to face each other. . Between the pair of substrates, an electro-optical material such as liquid crystal is surrounded by a sealing material, and thus closer to the center than the sealing area where the sealing material is present (that is, the area on the substrate facing the liquid crystal), The image display area in which the display electrodes are arranged is located. Here, in particular, when viewed two-dimensionally (that is, viewed from the direction opposite to the image display area), the frame area of the image display area is opposed to the frame shape along the inner contour of the seal area, for example, as described above. It is defined by the same film as the light shielding film provided on the substrate.

Further, a scanning line drive circuit is provided on the element array substrate in the frame area and the peripheral area located in the periphery thereof.
A so-called peripheral circuit built-in type electro-optical device in which peripheral circuits such as a data line driving circuit, a sampling circuit, and an inspection circuit are built is also generalized. For example, see Patent Document 1.

Therefore, in the frame area, there are wirings drawn from the image display area to the peripheral area. Further, when a part of a peripheral circuit such as a sampling circuit connected to such a wiring is formed in the frame area, a circuit element forming a part of the peripheral circuit exists in the frame area. That is, a pattern portion including wiring and circuit elements exists in the frame area.

In the electro-optical device having such a structure, the edge of the display window is located near the center line of the frame area in the light-shielding mounting case provided with the display window corresponding to the image display area. Be accommodated.

[0006]

[Patent Document 1] Japanese Patent Laid-Open No. 2002-40486

[0007]

However, according to the above-described electro-optical device, the pattern portion including the wiring and the circuit element existing in the frame area on the element array substrate is formed by patterning the conductive film such as the Al film. Become. For this reason, particularly when the incident light is strong and contains a large amount of oblique components as in the case of a projector, the incident light is reflected on the surface according to the reflectance of the pattern portion and the incident light of the pattern portion is Pass through the gap. The light reflected by the pattern portion in this manner is reflected by the frame light-shielding film made of Cr (chrome) or the like on the counter substrate.
Further, (i) the internal reflection light reflected by the frame light-shielding film or the light transmitted through the pattern portion is reflected by the back surface of the element array substrate, and (ii) the frame light-shielding film is also formed. The internal reflection light reflected by the light or the light transmitted through the pattern portion is the reflection light reflected by the optical element such as the polarizing plate, the phase difference plate, and the dustproof glass attached to the exit side of the electro-optical device, (iii). When a plurality of electro-optical devices are combined as a light valve to form a double-plate projector, the return light emitted from other electro-optical devices and penetrating the synthetic optical system is reflected by the pattern part or the frame light-shielding film. The generated internally reflected light and the like are finally mixed with the emitted light and emitted from the electro-optical device.

As a result of these, a light-dark pattern (for example, a light-dark pattern such as a striped pattern when a plurality of wirings are arranged) corresponding to reflection or transmission in the pattern portion is displayed near the edge of the display image. There is a problem.
In addition, the surface of the pattern part consisting of wiring and circuit elements,
Since the unevenness exists depending on the unevenness of the underlying surface and according to the pattern shape itself, the internally reflected light reflected on the uneven surface also has a bright-dark pattern due to the interference of light, so that it finally appears. The bright and dark pattern mixed with the incident light becomes more remarkable depending on the structure of the pattern portion.

On the contrary, in order to hide the bright and dark pattern reflected by the internal reflection of the wiring, a wide frame light-shielding film is defined so as to define the frame region considerably wider than the region on the substrate occupied by the pattern portion to be hidden. It will have to be formed. As a result, it becomes difficult to meet the basic requirement of the electro-optical device to secure a wide image display area in a limited area on the substrate. In addition, in consideration of the fact that the returned light and the internally reflected light are reflected by the surface of the frame light-shielding film facing the element array substrate and finally mixed into the emitted light as light having a dark-dark pattern, the frame light-shielding is performed in this manner. It is theoretically difficult to completely hide the light-dark pattern by simply enlarging the film.

The present invention has been made in view of the above-mentioned problems, and it is possible to prevent a bright-dark pattern caused by a pattern portion composed of wirings and circuit elements provided in the frame region from appearing outside the display image. An object of the present invention is to provide an electro-optical device and various electronic devices including the electro-optical device.

[0011]

In order to solve the above-mentioned problems, a first electro-optical device of the present invention has a display electrode arranged in an image display region on a substrate and a pixel switching element on the display electrode. A pattern portion which is directly connected to the image display area and which is provided in the frame area that defines the periphery of the image display area and which includes at least one of a wiring and a circuit element, and the pattern portion in a part of the frame area. A lower light-shielding film that at least partially covers from the substrate side.

According to the first electro-optical device of the present invention, wirings such as data lines and scanning lines are drawn out from the image display area and arranged in the frame area. Alternatively, or in addition to this, a transistor or a TFT forming at least a part of the peripheral circuit connected to the drawn wiring,
A circuit element such as a TFD is arranged in the frame area. Then, an image signal or the like is supplied to a display electrode such as a pixel electrode through a pixel switching element such as a TFT or directly through a wiring or a circuit element provided in the frame area in this way, thereby the active matrix Driving and passive matrix driving are possible.

At this time, particularly when the incident light is strong and contains a large amount of oblique components as in the case of a projector, for example, according to the reflectance of a pattern portion formed by patterning a conductive film such as an Al film, Incident light is reflected on the surface or incident light passes through the gaps in the pattern portion. However, in the present invention, in a part of the frame region, the pattern portion including the wiring and the circuit element is at least partially covered from the substrate side by the lower light-shielding film. Therefore, of the incident light reflected by the pattern portion or transmitted through the gap between the pattern portions, the amount of light finally mixed with the emitted light for display after undergoing internal reflection or directly is absorbed by the lower light-shielding film. Or, it is reduced by the amount of reflection. More specifically, the light reflected by the pattern portion is reflected by the frame light-shielding film on the counter substrate, so that even if the light travels toward the substrate side in the vicinity of the frame region, it is absorbed or absorbed by the lower light-shielding film. As much as it is reflected,
The amount of light mixed with the emitted light for display is reduced. The internal reflection light reflected by the frame light-shielding film and the light transmitted through the pattern part are also reflected from the back surface of the element array substrate, the polarizing plate, the phase difference plate, the optical elements such as dustproof glass, and the reflected light. The amount of light mixed with the emitted light for display is reduced by the amount absorbed or reflected by the light shielding film. Furthermore, even for the internal reflection light, which is the return light in the case of a multi-panel type projector, which is further reflected by the pattern part, the frame light-shielding film, etc., this is finally absorbed by the lower light-shielding film, and this is finally displayed. The amount of light mixed with the emitted light is reduced.

In particular, since the surface of the pattern portion including the wiring and the circuit element has unevenness depending on the unevenness of the underlying surface or the pattern shape itself, the internal reflection light reflected by the uneven surface is light. Although the light-dark pattern has a light-dark pattern due to the interference effect of, the light-dark pattern can be reduced by absorption or reflection by the lower light-shielding film.

As described above, according to the electro-optical device of the present invention, it is possible to reduce the light-dark pattern which is displayed outside the display image due to the pattern portion including the wiring and the circuit element provided in the frame area. Therefore, it is not necessary to widen the frame light-shielding film in order to hide the bright and dark patterns displayed near the edge of the display image, and it is possible to secure a wide image display area in a limited area on the substrate.

In addition, according to the electro-optical device of the present invention, since the lower light-shielding film is provided not in the entire frame region but in a portion facing the pattern portion, as compared with the case where it is formed in the entire frame region. The generation of stress can be reduced.

In one aspect of the first electro-optical device of the present invention,
In the frame area, a frame light-shielding film disposed above the pattern portion is further provided.

According to this aspect, for example, the built-in light-shielding film formed on the substrate and the light-shielding film formed on the counter substrate which is arranged so as to face the substrate with the electro-optical material such as liquid crystal interposed therebetween, and the pattern portion The frame region can be defined by the frame light-shielding film disposed on the upper side of the frame. In particular, the light-dark pattern that is reflected on the inner surface of the frame light-shielding film and that is displayed outside the display image generated according to the pattern portion is reduced by the lower light-shielding film disposed below the pattern portion. it can.

In another aspect of the first electro-optical device of the present invention, the lower light-shielding film is formed on the flat surface of the substrate directly or through a flat underlying insulating film.

According to this aspect, since the lower light-shielding film is formed on the flat surface of the substrate directly or through the flat underlying insulating film, the surface of the lower light-shielding film is almost uneven. Has not occurred. Therefore, part of the return light from the back surface of the substrate or the internal reflection light is temporarily reflected by the lower light-shielding film,
Even if the light is finally mixed with the emitted light for display, the light reflected by the flat lower light-shielding film hardly causes interference, so that it is possible to reduce the bright-dark pattern caused by the interference action.

In another aspect of the first electro-optical device of the present invention, the circuit element includes a first transistor, the display electrode is a pixel electrode, and the electro-optical device includes:
A second transistor connected to the pixel electrode is further provided as the pixel switching element, and the wiring is connected to the second transistor.

According to this aspect, the peripheral circuit including the first transistor and arranged in the frame region, such as the sampling circuit, the scanning line driving circuit, the data line driving circuit, the inspection circuit, the precharge circuit, and the like. An image signal is supplied to the second transistor through at least a part of. Then, switching control of the pixel electrode by the second transistor enables active matrix driving.

In another aspect of the first electro-optical device of the present invention, the same film as the lower light-shielding film is provided at least under the channel region of the second transistor.

According to this aspect, since the channel region of the second transistor as the pixel switching element connected to the pixel electrode is covered from the lower side by the lower light shielding film, the return light is transmitted to the channel region. It is possible to effectively prevent a situation in which the light leakage current is generated by the incidence and the characteristics of the second transistor are changed. As for incident light which is about to enter the channel region of the second transistor from above, a built-in light-shielding film separately formed on the substrate, wiring made of a light-shielding film such as an Al film, a light-shielding film provided on the counter substrate. For example, if the light is shielded, no particular problem occurs. In particular, the lower light-shielding film for light-shielding the second transistor in the pixel portion and the lower light-shielding film for preventing the generation of the light-dark pattern in the frame region are made of the same film, and are simultaneously manufactured by the same manufacturing process. Because it can be formed
The laminated structure on the substrate and the manufacturing process can be simplified.

In another aspect of the first electro-optical device of the present invention, the lower light-shielding film is a light absorbing film.

According to this aspect, when the return light is incident on the surface of the lower light-shielding film on the substrate side, the reflected light is attenuated by the light absorbing action. Therefore, even if the reflected light is finally mixed with the emitted light for display, the bright-dark pattern based on the reflected light can be attenuated.

In this aspect, the light absorption film may include at least one of a polysilicon film and a refractory metal film.

According to this structure, it is possible to relatively easily form the light absorbing film having the excellent light absorbing action on the lower side of the pattern portion.

In another aspect of the first electro-optical device of the present invention, the lower light-shielding film is formed in an island shape.

According to this aspect, by forming the lower light-shielding film by dividing it into islands, stress is generated due to the existence of the lower light-shielding film, as compared with the case where the lower light-shielding film is formed over the entire frame region. Therefore, it is possible to improve the manufacturing yield and the device reliability.

In another aspect of the first electro-optical device of the present invention, the lower light-shielding film is made of a conductive film.

According to this aspect, since the lower light-shielding film is made of a conductive film, it can be used not only as a light-shielding film but also as a wiring or the like.

In the case where the lower light-shielding film is made of a conductive film, the lower light-shielding film may be configured so that a fixed potential is at least partially supplied.

According to this structure, it is possible to prevent the wiring or the circuit element in the frame region from being adversely affected by the potential fluctuation of the lower light-shielding film.

Alternatively, in the aspect in which the lower light-shielding film is made of a conductive film, at least a portion of the lower light-shielding film laminated below the first transistor may be set to a floating potential.

According to this structure, since the lower light-shielding film portion laminated below the first transistor has the floating potential, the potential fluctuation of the lower light-shielding film is
It is possible to effectively prevent the characteristics of the first transistor from being adversely affected.

In this case, further, at least the portion of the lower light-shielding film laminated below the first transistor is the portion of the lower light-shielding film facing the source electrode of the first transistor. The lower light-shielding film may include a portion provided in an island shape so as to be separated from a portion facing the drain electrode of the first transistor.

According to this structure, the island-shaped portion of the lower light-shielding film separates the portion of the lower light-shielding film that faces the source electrode and the portion that faces the drain electrode from each other. Capacitive coupling between the source electrode and the drain electrode due to the parasitic capacitance between the side light-shielding film and the source electrode and the parasitic capacitance between the lower light-shielding film and the drain electrode can be reduced. Therefore, high transistor characteristics can be obtained with the first transistor.

In the aspect in which the lower light-shielding film is made of a conductive film, at least a portion of the lower light-shielding film that is laminated below the first transistor includes the first lower light-shielding film. A slit may be provided so as to separate a portion facing the source electrode of the transistor and a portion of the lower light-shielding film facing the drain electrode of the first transistor.

According to this structure, the portion of the lower light-shielding film that faces the source electrode and the portion of the lower light-shielding film that faces the drain electrode are separated from each other by the slits. Capacitive coupling between the source electrode and the drain electrode due to the parasitic capacitance between the film and the source electrode and the parasitic capacitance between the lower light-shielding film and the drain electrode can be reduced. Therefore, high transistor characteristics can be obtained with the first transistor.

In the aspect in which the lower light-shielding film is made of a conductive film, the lower light-shielding film may not be laminated below the channel region of the first transistor.

According to this structure, since the lower light-shielding film is not arranged below the channel region of the first transistor, the potential fluctuation of the lower light-shielding film adversely affects the characteristics of the first transistor. The effect can be effectively prevented.

In the aspect in which the lower light-shielding film is made of a conductive film, at least a portion of the lower light-shielding film laminated below the channel region of the first transistor is set to the gate potential of the first transistor. It may be configured as follows.

According to this structure, the lower light-shielding film portion laminated on the lower side of the channel region of the first transistor has the gate potential of the first transistor, so that the gate electrode of the first transistor is arranged on the upper side. By doing so, a back channel can be formed by the lower light-shielding film portion. Therefore, the characteristics of the first transistor can be improved.

In another aspect of the first electro-optical device of the present invention, the lower light-shielding film has the image display area with a predetermined width preset according to an incident angle of incident light with which the frame area is irradiated. Is formed in the region from the outer periphery to the peripheral side.

According to this aspect, for example, in a projector application for enlarging and projecting, the incident angle of the incident light portion irradiated to the frame region becomes large, but the lower side of a predetermined width preset according to such an incident angle. The light shielding film is formed in the area from the outer periphery of the image display area to the peripheral side. That is, it is possible to form the lower light-shielding film only in a region required to prevent the bright-dark pattern depending on the incident angle in the frame region, which is advantageous.

By the way, with the lower light-shielding film which covers the pattern portion alone as described above, it is possible to sufficiently obtain the effect of not displaying an image that should not be displayed outside the display image, which is the object of the present invention. May not be. That is, a region other than the formation region of the pattern portion, in other words,
In a region where wiring and circuit elements are not formed, incident light may pass through as it is because there is nothing that blocks light. Then, the light that “passed through as it is” reaches the outside of the display image, so that a dim image of light is projected around the image, which may impair the appearance of the image.

Therefore, in order to solve the above-mentioned problems, the second electro-optical device of the present invention has a display electrode arranged in the image display region on the substrate and a pixel switching element on the display electrode. Alternatively, a pattern portion that is directly connected and that is provided in a frame area that defines the periphery of the image display area and that includes at least one of a wiring and a circuit element, and at least part of the frame area includes the pattern portion. A lower light-shielding film that covers from the substrate side, and a second light-shielding film that is formed in a region other than a region where the pattern portion is formed in the frame region and is formed as the same film as the lower light-shielding film.
And a lower light-shielding film.

According to the second electro-optical device of the present invention, wirings such as data lines and scanning lines are drawn out from the image display area and arranged in the frame area. Alternatively, or in addition to this, a transistor or a TFT forming at least a part of the peripheral circuit connected to the drawn wiring,
A circuit element such as a TFD is arranged in the frame area. Then, an image signal or the like is supplied to a display electrode such as a pixel electrode through a pixel switching element such as a TFT or directly through a wiring or a circuit element provided in the frame area in this way, thereby the active matrix Driving and passive matrix driving are possible.

At this time, particularly when the incident light is strong and contains a large amount of oblique components as in the case of a projector, as described above, the light reflected in the pattern portion or the light passing through the gap between the pattern portions is used. Occurs, and the appearance thereof may be impaired by being reflected on the image. In addition, the area other than the area where the pattern portion is formed in the frame area, that is, the wiring and the circuit element are not formed. In the non-existing region, there may be a phenomenon in which the incident light passes through as it is because there is nothing that blocks the light.

However, in the present invention, first, there is a possibility that the former pattern portion may be mixed with the light forming the image through the reflection or the passage of the light, by the light absorption or the light reflection in the lower light shielding film. It can be reduced.
This is as described regarding the above-mentioned first electro-optical device. In the present invention, in particular, the second lower light-shielding film is formed in the area other than the area where the pattern portion is formed, so that the light that "passes through" is blocked, that is, The light can be absorbed or reflected by the second lower light-shielding film. Therefore, according to the present invention, it is possible to avoid a situation in which a dim image of light appears around the image, and it is possible to display an image that looks good and has high quality.

In addition, since the lower light-shielding film and the second lower light-shielding film are formed as the same film, the manufacturing process can be simplified or the manufacturing cost can be reduced accordingly.

In order to solve the above problems, a third electro-optical device of the present invention is connected to a display electrode arranged in an image display region on a substrate and the display electrode via a pixel switching element. And a pattern portion formed of at least one of a wiring and a circuit element provided in a frame area that defines the periphery of the image display area, and in a part of the frame area, the pattern portion is at least partially on the substrate side. The lower light-shielding film, the region light-shielding film formed as the same film as the lower light-shielding film, covering at least the channel region of the second transistor as the pixel switching element from the substrate side, and the frame region. In at least a part of the peripheral area located around the image display area,
The lower light shielding film and the outer light shielding film formed as the same film as the inner light shielding film are provided.

According to the third electro-optical device of the present invention, wirings such as data lines and scanning lines are drawn out from the image display area and arranged in the frame area. Alternatively, or in addition to this, a transistor or a TFT forming at least a part of the peripheral circuit connected to the drawn wiring,
A circuit element such as a TFD is arranged in the frame area. Then, by supplying an image signal and the like to the display electrodes such as pixel electrodes through the pixel switching elements such as TFTs through the wirings and circuit elements provided in the frame area in this way, active matrix driving and It becomes possible to perform passive matrix driving.

In particular, according to the present invention, three kinds of light-shielding films, that is, a lower light-shielding film, an inner light-shielding film, and an outer light-shielding film, all formed as the same film, are formed on the substrate. . Of these, the lower light-shielding film is the above-mentioned first light-shielding film.
As already described with respect to the electro-optical device and its various aspects, it is possible to avoid mixing of light that has undergone reflection in the pattern portion, light that passes through the pattern portion, or the like with an image. As a result, it is possible to reduce the bright and dark patterns displayed near the edges of the display image.

On the other hand, the area light-shielding film enhances the light resistance of the second transistor as a pixel switching element formed in the image display area. That is, since the region light-shielding film is formed so as to cover at least the channel region of the second transistor from the substrate side, it prevents light from entering the channel region and suppresses the occurrence of a light leak current there. As a result, it is possible to prevent the occurrence of flicker on the image due to the characteristic change of the second transistor or the irregular operation. As a result, the quality of the displayed image can be improved.

In addition, in the present invention, the outside light-shielding film is formed in the peripheral region located around the image display region. This outside light shielding film is a concept that may include the lower light shielding film, and the difference is that the formation region of the outside light shielding film is not limited to the frame region. The presence of this outside light-shielding film makes it possible to block the progress of light that attempts to pass through the general periphery of the image display area (that is, the peripheral area). Thus, according to the present invention, mainly, it is possible to more effectively prevent the occurrence of the phenomenon of producing a blurred image of light around the image, which is more effectively possible, and a good-looking and high-quality image can be obtained. Can be displayed.

Further, according to the present invention, since the lower light-shielding film, the inner light-shielding film and the outer light-shielding film are all formed as the same film, that is, at the same time in the manufacturing process stage, these light-shielding films are separated. It is possible to realize simplification of the manufacturing process, reduction of the manufacturing cost, and the like, as compared with the case of forming the same.

In one aspect of the third electro-optical device of the present invention,
The extraneous light-shielding film includes a second lower light-shielding film formed as the same film as the lower light-shielding film in a region other than the pattern region forming region in the frame region.

According to this aspect, the second lower light-shielding film formed in the frame region other than the region where the pattern portion is formed prevents light that cannot be prevented by the lower light-shielding film alone. It becomes possible to prevent passage. That is,
It is possible to prevent unconditional passage of incident light in a region where the pattern portion including the wiring and the circuit element is not formed. Therefore, according to the present invention, it is possible to more effectively avoid the situation in which a dim image of light appears around the image, and it is possible to display a good-looking and high-quality image. Becomes

In another aspect of the third electro-optical device of the present invention, the peripheral region is further provided with a peripheral circuit connected to the pattern portion and for driving the display electrode, The outside light-shielding film is formed in a region other than the formation region of the second pattern portion that connects at least one set between the wirings forming the peripheral circuit, between the circuit elements, and between the wirings and the circuit elements.

According to this aspect, the area outside the area other than the formation area of the second pattern portion that connects at least one set of the wiring and the circuit element period between the wirings forming the peripheral circuit and between the circuit elements. A light shielding film is formed. In short, the outside light-shielding film in this aspect is
Originally, it includes a portion formed as if "filling" a portion where no element is formed. Due to the presence of such an outside light-shielding film, the possibility that light will pass “as is” will be further reduced.

Further, in this aspect, in the portion where each wiring and each circuit element that form the peripheral circuit are formed, the situation where "as-is" light originally passes through each wiring and each circuit element. Cannot occur (that is, the progress of light is blocked to some extent by these wirings and circuit elements).
It can be said that it is formed at an appropriate and necessary place. As a result, it is possible to realize a relative narrowing of the area of the outside light-shielding film and reduce the action of internal stress of the light-shielding film.

In this embodiment, the case where the outside light-shielding film is formed in the "region other than the region where the second pattern portion is formed" is particularly mentioned, but in some cases,
"A region where the second pattern portion is formed" including such a region
Also in this case, the outside light shielding film may be formed. According to such a form, the outside light-shielding film has a form in which it is formed over the entire surface, so that the problem of internal stress is more likely to be manifested. However, even in the second pattern part, the pattern part is also formed. With respect to the above, since the reflection or passage of light as described above may occur, it can be said that it has a corresponding meaning. That is, in the sense that light reflected or transmitted by the second pattern portion is prevented from being mixed with light forming an image, it is possible to form the outside light shielding film in the formation region of the second pattern portion. It can be said that it is significant. In this case, more simply, the expression "the outside light-shielding film is formed so as to cover the entire peripheral region" is appropriate.

In another aspect of the second or third electro-optical device of the present invention, the outside light-shielding film is formed in an island shape.

According to this aspect, since the outside light-shielding film is formed in an island shape, it is possible to reduce the internal stress of the light-shielding film, as is clear from the comparison with the light-shielding film formed in a solid shape over the entire surface. You can As a result, the external light-shielding film is destroyed by its own internal stress, and other components (for example, interlayer insulating film) existing around the external light-shielding film.
When the stress acts on the above, it is possible to avoid a situation in which a crack is generated.

In this aspect, in particular, the distance between adjacent islands is 4 μm or less.

With such a structure, it means that the distance between the island-shaped outside light-shielding films is appropriately set. The circumstances will be described below in order. First, when the outside light shielding film is formed in an island shape, there is a possibility that light may pass through the gap between the islands. For example, it is conceivable that the return light incident from the back side of the substrate passes through the gap. Then, in this case, the light that has passed therethrough may be mixed with the light forming the image by being reflected by the frame light-shielding film or the like that is kept behind and passing through the gap again. However, in this embodiment, the distance between the islands is set to 4 μm or less, so that the above-mentioned phenomenon hardly occurs. In other words, the fact that the light that has passed through the gap is reflected by an element that is behind it and then passes through the gap again means that the size of the gap is relatively narrow, 4 μm or less, It cannot happen. It is naturally possible that incident light that is not return light directly passes through the gap, but even in such a case, since the gap has a relatively small gap, it is given to the image. The influence can be suppressed to the minimum.

As described above, in the present embodiment, the light-shielding film itself has the same function as that of the image of light around the image while obtaining the function and effect of the island formation, that is, the effect of reducing the internal stress. It is possible to enjoy the effect of preventing the occurrence of the material almost as well.

From the above-mentioned circumstances, the distance between the islands of the light-shielding film according to the present invention is more preferably 2 μm or less.

In another aspect of the second or third electro-optical device of the present invention, the electro-optical device is mounted, and a mounting case having a display window corresponding to the image display area is further provided. At least one of the second lower light-shielding film and the outside light-shielding film is at least partially formed in a region between the edge of the display window and the edge of the image display region.

According to this aspect, the mounting case having the display window that allows the image display area to be seen from the outside of the electro-optical device is provided. In other words, the region where light may be substantially transmitted is the display window portion including the image display region, and the other portions are made of the material forming the mounting case (for example, preferably magnesium or an alloy thereof). The progress of light will be blocked by the metal material of (). This means that as far as parts other than the display window are concerned, the presence of light reflected by the pattern part as described above or the light passing through the pattern part, and further, passing through the region other than the pattern part formation region as it is. It means that it is not necessary to pay particular attention to the presence of the light. However, the above-mentioned consideration is still required for the portion that is the display window portion and is outside the image display area.

In this aspect, at least one of the second lower light-shielding film and the outside light-shielding film (hereinafter, may be simply referred to as “light-shielding film according to the present invention”) has the edge of the display window and the image display area. Since it is formed at least partially in the region between the edge and the edge, effective shielding can be performed, which reflects the above-mentioned purpose. At the same time, this means that the light-shielding film according to the present invention only needs to be formed in an appropriate and necessary area, and the area can be relatively narrowed. Therefore, the internal stress inside the light-shielding film can be further reduced, and the reliability of the device can be improved.

The lower light-shielding film, the second lower light-shielding film, the inner light-shielding film, or the outer light-shielding film in the second or third electro-optical device of the present invention described above is the same as the above-mentioned first electro-optical device. It is possible to have the same features as the various features that the lower light-shielding film in FIG. That is, these light-shielding films are formed on a flat substrate or a base insulating film, or these light-shielding films are made of a light-absorbing film, and particularly include at least one of a polysilicon film and a refractory metal film. Alternatively, these light-shielding films are made of a conductive film or have a fixed potential or a floating potential. It is obvious that the same effect as described above can also be obtained in the second or third electro-optical device of the present invention by this.

In another aspect of the second or third electro-optical device of the present invention, in the frame area, a frame light shielding film disposed above the pattern portion is further provided, and the frame light shielding film is made of at least aluminum. Including.

According to this aspect, for example, the built-in light-shielding film formed on the substrate and the light-shielding film formed on the counter substrate facing the substrate with the electro-optical material such as liquid crystal interposed between the pattern portion The frame region can be defined by the frame light-shielding film disposed on the upper side of the frame.

In addition, according to the present invention, in particular, since the frame light-shielding film is made of aluminum as described above, light is likely to be reflected and heat is not accumulated inside the electro-optical device. As a result, for example, stable operation of the thin film transistor or the like as the pixel switching element can be ensured, and stable operation of the electro-optical device for a relatively long period of time becomes possible.

However, when the frame light-shielding film is made of such a material having high light reflectivity as described above, the generation of the light-dark pattern reflected around the image as described above or the dim light appearing near the edge of the image It can be said that the occurrence of the image of is more remarkable.

However, in the present invention, the light-dark pattern, which is reflected on the inner surface of the frame light-shielding film and is reflected outside the display image generated according to the pattern portion, is arranged below the pattern portion. This can be reduced by the lower light-shielding film. Furthermore, according to the present invention, the second lower light-shielding film or the extra-region light-shielding film is provided even when the inner surface reflected light reflected by the inner surface of the frame light-shielding film passes through the substrate as it is. As a result, it is possible to suppress the generation of a dim image of light that appears near the edge of the image.

In order to solve the above-mentioned problems, the electronic equipment of the present invention is equipped with the above-mentioned electro-optical device of the present invention (however, including its various aspects).

Since the electronic apparatus of the present invention is equipped with the above-described electro-optical device of the present invention, a bright and dark pattern due to the pattern portion formed of the wiring and circuit elements provided in the frame area is displayed in the display image. Projection display device, liquid crystal television, mobile phone, electronic notebook, word processor, viewfinder type or monitor direct-view video tape recorder, workstation, videophone capable of displaying high-quality images , POS terminals, touch panels, and other electronic devices can be realized.

The operation and other advantages of the present invention will be apparent from the embodiments described below.

[0083]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The following embodiments apply the electro-optical device of the present invention to a liquid crystal device.

(First Embodiment) First, the overall structure of the electro-optical device according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. Here, a TFT active matrix drive type liquid crystal device with a built-in drive circuit, which is an example of an electro-optical device, is taken as an example.

FIG. 1 is a plan view of the TFT array substrate together with the components formed thereon as viewed from the counter substrate side, and FIG. 2 is a sectional view taken along the line HH 'of FIG.

1 and 2, in the electro-optical device according to this embodiment, the TFT array substrate 10 and the counter substrate 2 are used.
0 and 0 are arranged to face each other. A liquid crystal layer 50 is enclosed between the TFT array substrate 10 and the counter substrate 20,
The T array substrate 10 and the counter substrate 20 are arranged in the image display area 1
They are adhered to each other by a seal material 52 provided in a seal area located around 0a.

The sealing material 52 is made of, for example, an ultraviolet curable resin or a thermosetting resin for bonding the TFT array substrate 10 and the counter substrate 20 together. Irradiation,
It is cured by heating or the like. Further, in the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the gap (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is scattered. That is, the electro-optical device according to the present embodiment is small for a light valve of a projector and is suitable for performing enlarged display. However, such a gap material may be included in the liquid crystal layer 50 as long as the electro-optical device is a large-sized liquid crystal device such as a liquid crystal display or a liquid crystal television that displays at the same size.

A light-shielding frame light-shielding film 53 that defines the image display region 10a is provided on the counter substrate 20 side in parallel with the inside of the seal region in which the seal material 52 is arranged.
However, some or all of such a frame light-shielding film is not
It may be provided as a built-in light-shielding film on the array substrate 10 side.

Particularly in this embodiment, the lower light-shielding film 501 is partially formed below the frame light-shielding film 53. The lower light-shielding film 501 is partially formed under the frame light-shielding film 53 extending from the outer periphery of the image display area 10a to the peripheral side.
The configuration and the light blocking effect of the lower light blocking film 501 will be described later in detail.

The data line driving circuit 101 and the external circuit connecting terminal 102 are provided in the TFT array substrate 10 in the peripheral area located outside the seal area in which the seal material 52 is arranged among the areas extending around the image display area 10a. The scanning line driving circuit 104 is provided along one side, and the scanning line driving circuit 104 is provided along two sides adjacent to the one side. Further TFT
A plurality of wirings 105 for connecting the scanning line drive circuits 104 provided on both sides of the image display area 10a are provided on the remaining side of the array substrate 10. Further, as shown in FIG. 1, vertical conducting members 106 functioning as vertical conducting terminals between the two substrates are arranged at four corners of the counter substrate 20. On the other hand, the TFT array substrate 10 is provided with vertical conduction terminals in the regions facing these corners. As a result, electrical continuity can be established between the TFT array substrate 10 and the counter substrate 20.

Particularly in this embodiment, the data line driving circuit 1
A sampling circuit 301 for sampling the image signal supplied from the frame 01 is arranged in the frame area formed by the frame light-shielding film 53. That is, circuit elements such as TFTs, which will be described later, that configure the sampling circuit 301 are arranged in the frame region. Further, a wiring portion from the data line wired in the image display area 10a to the sampling circuit 301,
Various wiring portions such as a wiring portion from the data line driving circuit 101 to the sampling circuit 301 and a wiring portion from the scanning line wired in the image display area 10a to the scanning line driving circuit 104 are also arranged in the frame area. .

In FIG. 2, on the TFT array substrate 10, an alignment film is formed on the pixel electrodes 9a after the TFTs for pixel switching and wirings such as scanning lines and data lines are formed. On the other hand, on the counter substrate 20, the counter electrode 2
1, an alignment film is formed on the uppermost layer. Also,
The liquid crystal layer 50 is made of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed, and between the pair of alignment films,
It takes a predetermined alignment state.

On the TFT array substrate 10 shown in FIGS. 1 and 2, in addition to the data line driving circuit 101, the scanning line driving circuit 104, the sampling circuit 301, etc., a predetermined voltage is applied to a plurality of data lines. A precharge circuit for supplying a level precharge signal prior to the image signal, a test circuit for inspecting the quality, defects, etc. of the electro-optical device during manufacturing or shipping may be formed.

Next, the circuit configuration and operation of the electro-optical device configured as described above will be described with reference to FIG. FIG. 3 shows various elements in a plurality of pixels formed in a matrix which form an image display area of the electro-optical device,
It is a block diagram showing an equivalent circuit such as wiring and a peripheral circuit.

In FIG. 3, a pixel electrode 9a and a TFT 30 for controlling switching of the pixel electrode 9a are respectively provided in a plurality of pixels which are formed in a matrix and constitute an image display area of the electro-optical device according to the present embodiment. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30.

In the peripheral area provided outside the image display area 10a, one end (lower end in FIG. 3) of the data line 6a is
It is connected to the drain of the TFT 202 that constitutes the sampling circuit 301. On the other hand, the image signal line 115 is connected to the source of the TFT 202 forming the sampling circuit 301 via the lead wiring 116. The sampling circuit drive signal line 114 connected to the data line drive circuit 101 is a TF that constitutes the sampling circuit 301.
It is connected to the gate of T202. Then, the image signals S1, S2, ..., Which are supplied via the image signal line 115.
Sn is configured to be sampled by the sampling circuit 301 and supplied to each data line 6a in response to the sampling circuit driving signal supplied from the data line driving circuit 101 via the sampling circuit driving signal line 114. ing.

The image signals S1, S2, ..., Sn to be written to the data line 6a may be line-sequentially supplied in this order, or for each group of a plurality of adjacent data lines 6a. It may be supplied.

Further, the scanning line 3a is electrically connected to the gate of the pixel switching TFT 30, and the scanning signal G1, pulsed to the scanning line 3a at a predetermined timing.
The scanning line driving circuit 104 applies G2, ..., Gm line-sequentially in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30, which is a switching element, for a certain period, the image signals S1, S2, ..., Sn supplied from the data line 6a are transmitted. Write at a predetermined timing. The image signals S1, S2, ..., Sn having a predetermined level written in liquid crystal as an example of an electro-optical material via the pixel electrode 9a are held for a certain period between the image signal S1, S2, ..., Sn formed on the opposite substrate 20. It The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied potential level, and enables gradation display. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in each pixel unit, and in the normally black mode, the incident light is incident according to the voltage applied in each pixel unit. The light transmittance is increased,
As a whole, the electro-optical device emits light having a contrast corresponding to the image signal. Here, in order to prevent the held image signal from leaking, the storage capacitor 7 is arranged in parallel with the liquid crystal capacitor formed between the pixel electrode 9 a and the counter electrode 21.
Add 0. In parallel with the scanning line 3a, a capacitance line 300 including a fixed potential side capacitance electrode of the storage capacitor 70 and fixed at a constant potential is provided.

Next, the frame light-shielding film 5 shown in FIG. 1 and FIG.
The detailed configuration of the electro-optical device in the frame region and the peripheral region in which No. 3 is provided will be described with reference to FIGS. 4 to 7, focusing on the configuration and the light-shielding action of the lower light-shielding film 501 provided in the frame region. . 4 is an enlarged partial sectional view showing the vicinity of the CR portion in FIG.
[FIG. 8] is a partial cross-sectional view showing an enlarged portion corresponding to the vicinity of a CR portion in a comparative example. 5 shows the frame light-shielding film 53 and the lead-out wiring 2 of the data line 6a among the parts shown in FIG.
FIG. 6 is a schematic partial perspective view partially showing an excerpt of the light shielding film 06 and the lower light-shielding film 501, and FIG. 6 is a partial excerpt of the frame light-shielding film 53 and the extraction wiring 206 of the data line 6a in the comparative example. It is a schematic partial perspective view shown.

As shown in FIG. 4, in this embodiment, various wirings such as the lead wiring 206 of the data line 6a and a sampling circuit are formed in the frame area below the frame light-shielding film 53 as an example of the pattern portion. Various circuit elements such as TFTs are arranged. A lower light-shielding film 501 is provided below the lead-out wiring 206 and the like provided in the frame region in this way.

As shown in FIG. 5, in the comparative example, such a lower light-shielding film 501 is not provided.

Therefore, as shown in FIG. 6, in this embodiment, when the incident light L1 incident from the upper side in the drawing is strong and includes a large amount of oblique components, for example, in the case of a projector, etc., for example, Al is used. The incident light L1 is reflected on the surface or the incident light L1 passes through a gap such as the extraction wiring 206 according to the reflectance of the extraction wiring 206 or the like formed by patterning a conductive film such as a film. Here, the lead-out wiring 206 and the like are covered by the lower light-shielding film 501 from the TFT array substrate 10 side (lower side in the drawing). Therefore, in the vicinity of the frame area, that is, in the vicinity of the outer periphery of the image display area 10a, the reflection wiring 206 or the reflection wiring 2 or
Of the incident light L1 that has passed through the gap such as 06, the light amount of the light L3 that finally mixes with the outgoing light Lout for display after or after undergoing internal reflection is the amount absorbed or reflected by the lower light-shielding film 501. Only significantly reduced.

More specifically, as shown in FIGS. 4 and 6, the light reflected by the lead-out wiring 206 and the like is reflected by the inner surface of the frame light-shielding film 53, so that the frame region 53 is formed.
Even if it progresses toward the TFT array substrate 10 side in the vicinity of
The amount of light mixed with the emission light Lout for display is reduced by the amount absorbed or reflected by the lower light-shielding film 501. The internal reflection light reflected by the frame light-shielding film 53 and the light transmitted through the extraction wiring 206 and the like are reflected by the back surface of the TFT array substrate 10 and a polarizing plate, a retardation plate, a dust-proof glass and the like externally attached thereto. As for the return light L2, which is also absorbed or reflected by the lower light-shielding film 501, the amount of light mixed with the emission light Lout for display is reduced. Further, the return light L2 in the case of the multi-plate type projector is further reflected by the lead-out wiring 206, the frame light-shielding film 53 and the like, and the internal reflection light is absorbed or reflected by the lower light-shielding film 501. As a result, the amount of the emitted light Lout for display is reduced.

The electro-optical device is housed in a light-shielding mounting case 800 made of resin or the like.
The light leaking into 00 is not a problem because it is absorbed by the inner surface thereof.

On the other hand, as shown in FIGS. 5 and 7, in the case of the comparative example in which the lower light-shielding film 501 is not provided, the lead-out wiring is provided near the frame region, that is, near the outer periphery of the image display region 10a. Of the incident light L1 reflected by 206 or transmitted through the gap such as the lead-out wiring 206, the amount of light finally mixed with the emitted light Lout for display after the internal reflection or directly is the lower light-shielding film 501. Compared with the case of this embodiment, the number is remarkably increased. In addition, in the case of this comparative example, in the vicinity of the frame area, that is, the image display area 10a.
In the vicinity of the outer periphery of the output light L2, the return light L2 is also reflected by the lead-out wiring 206 or the like or transmitted through the gap of the lead-out wiring 206 or the like, and further undergoes internal reflection by the frame light-shielding film or the like to finally be emitted light Lout for display. The amount of mixed light is significantly increased as compared with the case of the present embodiment where the lower light shielding film 501 is provided.

As described above, according to this embodiment, the lower light-shielding film 5 is formed on the lower side of the pattern portion including the lead wiring 206 and the like.
Since 01 is provided, it is possible to reduce the generation of light having a bright-dark pattern generated in the emitted light Lout for display in the vicinity of the outer periphery of the image display area 10a due to the light and dark of the pattern portion and light interference. Therefore, it is possible to effectively prevent the generation of a bright and dark pattern due to the pattern portion near the outside of the display image.

In this embodiment, the lower light-shielding film 5 is preferably used.
01 is directly on the flat surface of the TFT array substrate 10,
Alternatively, it is formed on a flat base insulating film formed on the flat TFT array substrate 10. In this way, the surface of the lower light-shielding film 501 hardly has irregularities. Therefore, even if some of the incident light L1 and the return light L2 shown in FIG. 5 and FIG. 7 are finally mixed in the outgoing light Lout for display after being reflected by the lower light-shielding film 501, they are flat. Since the light reflected by the lower light-shielding film 501 hardly causes interference, it is possible to significantly reduce the bright-dark pattern caused by the interference effect.

The lower light-shielding film 501 is made of, for example, Ti (titanium), Cr (chrome), W (tungsten), Ta.
(Tantalum), Mo (molybdenum), or the like, and at least one metal having a high melting point, such as a simple metal, an alloy, a metal silicide, a polysilicide, or a stack of these. The lower light-shielding film 501 is preferably formed of the same film as the lower light-shielding film that covers the channel region of the pixel switching TFT 30 in the image display region 10a as described above from below. Accordingly, the lower light-shielding film for shielding the pixel switching TFT 30 and the lower light-shielding film 501 for preventing the generation of the bright and dark patterns in the frame region can be simultaneously formed in the same manufacturing process, and on the TFT array substrate 10. The laminated structure and the manufacturing process can be simplified.

The lower light shielding film 501 may shield light mainly by light reflection, may mainly shield light by absorbing light, or may shield light by both of them.
If the light-shielding is mainly performed by absorbing light, the incident light L1 and the returning light L2 are provided on the lower light-shielding film 501 near the frame region.
This light can be attenuated each time it is incident on the light-absorbing film forming the. Particularly when the return light L2 becomes a problem, the lower light-shielding film 501 is provided on the TFT array substrate 10 with a light absorption layer on the TFT array substrate 10 side (lower side), and the reflection film is provided on the opposite side (upper side). 2) or a multi-layer structure. Alternatively, when the incident light L1 is a problem, the lower light shielding film 501 is provided on the TFT array substrate 10 with the light absorption layer on the counter substrate 20 side (upper side) and the reflection film is provided on the opposite side (lower side). 2) or a multi-layer structure. Such a light absorption layer,
For example, it includes at least one of a polysilicon film and a refractory metal film.

Further, the lower light-shielding film 501 is preferably divided and formed in an island shape in an appropriate size unit. By thus forming the island-shaped division, stress generation due to the presence of the lower light-shielding film 501 can be alleviated compared to the case where the lower light-shielding film is formed over the entire frame region.

In this embodiment, as shown in FIG. 4, the lower light-shielding film 501 is formed with an overlapping width ΔW in the region from the outer periphery of the image display region 10a to the peripheral side. The overlapping width ΔW can be set in advance to an appropriate value according to the incident angle of the incident light L2 with which the frame area is irradiated. In a projector application for magnifying and projecting, such an incident angle is generally large, and accordingly, it is necessary to increase the overlapping width ΔW so as not to generate the above-mentioned bright and dark pattern.
Such a predetermined width is experimental, in consideration of the actual device specifications,
It may be set concretely by experience or simulation.

Next, the configuration of the image display area of the electro-optical device according to the embodiment of the present invention will be described with reference to FIGS. 8 and 9. FIG. 8 is a plan view of a plurality of adjacent pixel groups of a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed. FIG. 9 is a sectional view taken along line EE ′ of FIG. In FIG. 9, the scales of the layers and members are different in order to make the layers and members recognizable in the drawing.

In FIG. 8, a plurality of transparent pixel electrodes 9 are arranged in a matrix on the TFT array substrate of the electro-optical device.
a (the outline is shown by the dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a.

Further, the scanning line 3a is arranged so as to oppose the channel region 1a 'shown by the hatched region of the semiconductor layer 1a, and the scanning line 3a functions as a gate electrode. In this way, the scanning line 3a and the data line 6
TFTs 30 for pixel switching, each of which has a scanning line 3a as a gate electrode, are provided in a channel region 1a 'at a position intersecting with "a".

As shown in FIGS. 8 and 9, the storage capacitor 70
Is a relay layer 7 as a pixel potential side capacitance electrode connected to the high-concentration drain region 1e of the TFT 30 and the pixel electrode 9a.
1 and a part of the capacitance line 300 as a fixed potential side capacitance electrode are formed by being opposed to each other with the dielectric film 75 interposed therebetween.

The capacitance line 300 is viewed in plan, and the scanning line 3a
8 extends in a stripe shape along the line, and a portion overlapping the TFT 30 projects vertically in FIG. Such a capacitance line 300 preferably includes a first film made of a conductive polysilicon film having a film thickness of about 50 nm and a second film made of a metal silicide film containing a refractory metal having a film thickness of about 150 nm. It is configured to have a laminated multilayer structure. According to this structure, the second film functions as a capacitance electrode on the fixed potential side of the capacitance line 300 or the storage capacitance 70 and also serves as a TFT.
It has a function as a light shielding layer that shields the TFT 30 from the incident light on the upper side of 30.

Particularly in this embodiment, since the capacitance line 300 is laminated between the scanning line 3a and the data line 6a, it is necessary to form a capacitance in a region overlapping with the scanning line 3a and the data line 6a when seen in a plan view. As a result, the storage capacity 70 is increased.

On the other hand, T on the TFT array substrate 10
Below the FT 30, the lower light-shielding film 11a is provided in a grid pattern. The lower light-shielding film 11a is made of, for example, Ti or C.
It is composed of a simple metal, an alloy, a metal silicide, a polysilicide, or a stack of these containing at least one of refractory metals such as r, W, Ta, and Mo.

The data lines 6a extending in the vertical direction in FIG. 8 and the capacitance lines 300 extending in the horizontal direction in FIG. 8 are formed so as to intersect each other, and the lower light-shielding film 11a formed in a lattice pattern is formed. , And defines the aperture area of each pixel.

As shown in FIGS. 8 and 9, the data line 6a
Is a high-concentration source region 1d of the semiconductor layer 1a made of, for example, a polysilicon film through the contact hole 81.
Electrically connected to. A relay layer made of the same film as the above-mentioned relay layer 71 may be formed to electrically connect the data line 6a and the high-concentration source region 1d through the relay layer and the two contact holes.

The capacitance line 300 preferably extends from the image display area 10a (see FIG. 1) in which the pixel electrode 9a is arranged to the periphery thereof and is electrically connected to a constant potential source.
It has a fixed potential. As such a constant potential source, a positive potential source or a negative power source constant potential source supplied to the data line driving circuit 101 or the scanning line driving circuit 104 may be used, or the counter substrate 20.
A constant potential supplied to the counter electrode 21 may be used. Further, in order to prevent the potential fluctuation of the lower light-shielding film 11a provided below the TFT 30 from having an adverse effect on the TFT 30, the lower light-shielding film 11a extends from the image display region 10a to its periphery in the same manner as the capacitance line 300. It is good to install and connect to a constant potential source.

The pixel electrode 9a is electrically connected to the high concentration drain region 1e of the semiconductor layer 1a through the contact holes 83 and 85 by relaying the relay layer 71.

In FIGS. 8 and 9, the electro-optical device is
It is provided with a transparent TFT array substrate 10 and a transparent counter substrate 20 arranged to face it. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

As shown in FIG. 9, the TFT array substrate 10
Is provided with a pixel electrode 9a, and on the upper side thereof,
Alignment film 16 subjected to a predetermined alignment treatment such as rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO film. The alignment film 16 is, for example,
It is made of a transparent organic film such as a polyimide film.

On the other hand, the counter substrate 20 is provided with a counter electrode 21 over the entire surface thereof, and an alignment film 22 subjected to a predetermined alignment treatment such as a rubbing treatment is provided below the counter electrode 21. There is. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of a transparent organic film such as a polyimide film.

The counter substrate 20 may be provided with a lattice-shaped or stripe-shaped light-shielding film corresponding to the non-opening region of each pixel. By adopting such a configuration, as described above, the light shielding film on the counter substrate 20 together with the capacitance line 300 and the data line 6a that define the non-opening region allows the counter substrate 20 to be formed.
It is possible to more reliably prevent the incident light from the side from entering the channel region 1a ′, the low-concentration source region 1b, and the low-concentration drain region 1c. Further, such a light-shielding film on the counter substrate 20 functions to prevent the temperature of the electro-optical device from rising by forming at least the surface irradiated with incident light with a highly reflective film. In addition, it is preferable that such a light-shielding film on the counter substrate 20 is formed thinly inside the non-opening region so that the opening region of each pixel is not narrowed due to the misalignment between the substrates. Even if it is formed in such a thin shape, the effect of performing redundant light shielding and preventing the temperature rise inside the electro-optical device due to incident light is exhibited.

A sealing material 52 (see FIGS. 1 and 2) is provided between the TFT array substrate 10 and the counter substrate 20 arranged in such a manner that the pixel electrode 9a and the counter electrode 21 face each other. Liquid crystal, which is an example of an electro-optical material, is enclosed in a space surrounded by () to form a liquid crystal layer 50.

Further, the base insulating film 12 is provided below the pixel switching TFT 30. Base insulating film 1
2 has a function of insulating the TFT 30 from the lower light-shielding film 11a between layers, and is formed on the entire surface of the TFT array substrate 10, so that the surface of the TFT array substrate 10 is roughened during polishing, and remains after cleaning. It has a function of preventing the characteristic change of the pixel switching TFT 30.

In FIG. 9, TF for pixel switching is used.
T30 has an LDD (Lightly Doped Drain) structure, and includes the scanning line 3a and the channel region 1 of the semiconductor layer 1a in which a channel is formed by the electric field from the scanning line 3a.
a ′, an insulating film 2 including a gate insulating film that insulates the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region 1d. It has a concentration drain region 1e.

A high concentration source region 1d is formed on the scanning line 3a.
A first interlayer insulating film 41 is formed in which a contact hole 81 leading to and a contact hole 83 leading to the high-concentration drain region 1e are opened.

A relay layer 71 and a capacitance line 300 are formed on the first interlayer insulating film 41, and a contact hole 81 leading to the high-concentration source region 1d and a contact hole 85 leading to the relay layer 71 are formed thereon. To form a second interlayer insulating film 42.

The data line 6a is formed on the second interlayer insulating film 42, and the flattened third interlayer insulating film 43 in which the contact hole 85 leading to the relay layer 71 is formed is formed on these. Has been done. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 thus configured.

In the present embodiment, the surface of the third interlayer insulating film 43 is flattened by CMP (Chemical Mechanical Polishing) processing or the like, and a step due to various wirings and elements existing therebelow is formed. The liquid crystal alignment defect due to the liquid crystal layer 50 is reduced.

As described above, according to the first embodiment, since the lower light-shielding film 501 is provided, various wirings such as the extraction wiring 206 of the data line provided in the frame area and various circuit elements such as the TFT 202 are provided. It is possible to reduce the light-dark pattern that is displayed near the outside of the display image due to the pattern portion made of. Therefore, it is not necessary to widen the frame light-shielding film 53 in order to hide such a light-dark pattern,
The image display area 10a can be made large.

In addition, according to the first embodiment, the lower light-shielding film 501 is provided not in the entire frame region but in various wirings such as the data line extraction wiring 206 provided in the frame region and the TFT.
Since it is provided in a part facing the pattern portion composed of various circuit elements such as 202, the occurrence of stress can be reduced as compared with the case where it is formed in the entire frame region.

In the embodiment described above, by stacking a large number of conductive layers as shown in FIG. 9, the data line 6a on the lower ground of the pixel electrode 9a (that is, the surface of the third interlayer insulating film 43) is formed. The step formed in the region along the scan line 3a and the scan line 3a is mitigated by flattening the surface of the third interlayer insulating film 43. Instead of or in addition to this, TF
T array substrate 10, base insulating film 12, first interlayer insulating film 4
The flattening process may be performed by digging a groove in the first and second interlayer insulating films 42 or the third interlayer insulating film 43 and embedding the wiring such as the data line 6a, the TFT 30, and the like, or the second interlayer insulating film 42. The flattening process may be performed by polishing the step on the upper surface of the substrate by CMP treatment or the like, or by forming it flat using organic or inorganic SOG.

Next, the second to fourth embodiments and their modifications related to various specific examples of the planar shape of the lower light-shielding film 501 configured as described above will be described. In each of these embodiments, the lower light-shielding film 501 is made of a conductive light-shielding film such as a refractory metal film. Therefore, in each of these embodiments, the lower light-shielding film 501 arranged in the frame region is formed.
The specific shape of the lower light-shielding film 501, which is suitable for reducing the adverse effect of the electrical state or the potential fluctuation in FIG. 1 on the operation of the circuit elements such as the TFT 202 similarly arranged in the frame region. It is a thing.

(Second Embodiment) An electro-optical device according to a second embodiment of the present invention will be described with reference to FIGS. FIG. 10 shows a complementary TFT as an example of a circuit element formed in the frame region according to the second embodiment.
11 is an enlarged plan view of FIG. 11, and FIG. 11 is a sectional view taken along line AA ′ of FIG. 10 and 11, the same components as those of the first embodiment shown in FIGS. 1 to 9 are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIGS. 10 and 11, the complementary T
The FT 202a includes a semiconductor layer 320 including a P-channel region 320p and an N-channel region 320n, the tip of the wiring 316 is used as a gate electrode (input side), and the tip of the low-potential wiring 321 and the high-potential wiring 322 are respectively formed. A P-channel type TFT 202p and an N-channel type TFT 202n which are used as a source electrode and a drain electrode (output side) is provided at the tip of the wiring 306 are configured in combination.
The P-channel TFT 202p and the N-channel TFT 202n are the pixel switching TFT 3
Like 0, it may have an LDD structure. Particularly in the second embodiment, the lower light-shielding film 5 made of a conductive film such as a refractory metal film is used.
01a is divided and formed, and at least complementary TF
The island-shaped portion that covers T202a from below is set to a floating potential. Other configurations are similar to those of the first embodiment described with reference to FIGS. 1 to 9.

Therefore, according to the second embodiment, since the potential fluctuation of the lower light-shielding film 501a is a floating potential, it is possible to effectively prevent the potential fluctuation from adversely affecting the characteristics of the complementary TFT 202a. .

In the second embodiment, the lower light shielding film 501
A fixed potential may be supplied to a portion of the a except the island-shaped portion facing the complementary TFT 202a, as in the case of the lower light-shielding film 11a in the image display region 10a.

(Third Embodiment) An electro-optical device according to a third embodiment of the invention will be described with reference to FIGS. 12 and 13. Here, FIG. 12 is a complementary TFT as an example of a circuit element formed in the frame region in the third embodiment.
FIG. 13 is an enlarged plan view of FIG. 13, and FIG. 13 is a BB ′ sectional view thereof. 12 and 13, the first embodiment shown in FIGS. 1 to 9 and the second embodiment shown in FIGS. 10 and 11.
The same components as those in the embodiment are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIGS. 12 and 13, particularly in the third embodiment, the lower light-shielding film 501b made of a conductive film such as a refractory metal film is not divided and formed as in the second embodiment. , Two slits are provided along the two gate potential poles of the complementary TFT 202b, respectively. Other configurations are similar to those of the second embodiment described with reference to FIGS. 10 and 11.

Therefore, according to the third embodiment, between the source electrode and the drain electrode in the complementary TFT 202b due to the parasitic capacitance between the lower light-shielding film 501b and the source electrode and the parasitic capacitance between the lower light-shielding film 501b and the drain electrode. Since the capacity coupling of can be reduced,
The potential variation of the lower light-shielding film 501b is caused by the complementary TFT 202.
It can be effectively prevented that the characteristic of b is adversely affected.

The slit of the lower light-shielding film 501b may have a width of, for example, about 1 μm. Even if the slits are formed in this manner, since the gate electrode itself made of, for example, a conductive polysilicon film exhibits a certain degree of light absorption, the light-dark pattern that can be caused by the presence of the slits is relatively small. .

In the third embodiment, the lower light-shielding film 501b having such a slit is fixed via the extending portion 502 as in the case of the lower light-shielding film 11a in the image display area 10a. You may comprise so that an electric potential may be supplied.

(Fourth Embodiment) An electro-optical device according to a fourth embodiment of the present invention will be described with reference to FIGS. 14 and 15. FIG. 14 is an enlarged plan view of a complementary TFT as an example of a circuit element formed in the frame region in the fourth embodiment, and FIG. 15 is a CC ′ sectional view thereof.
14 and 15, the same components as those of the first embodiment shown in FIGS. 1 to 9 and the second embodiment shown in FIGS. 10 and 11 are designated by the same reference numerals. The description is omitted.

As shown in FIGS. 14 and 15, particularly in the fourth embodiment, the lower light-shielding film 501c made of a conductive film such as a refractory metal film is used in the semiconductor layer of the complementary TFT as in the first embodiment. The semiconductor layer 32 of the complementary TFT 202c is not divided into large islands with 320 as one unit.
The source region and the drain region at 0 are each divided into smaller islands. Other configurations are similar to those of the second embodiment described with reference to FIGS. 10 and 11.

Therefore, according to the fourth embodiment, between the source electrode and the drain electrode in the complementary TFT 202c due to the parasitic capacitance between the lower light-shielding film 501c and the source electrode and the parasitic capacitance between the lower light-shielding film 501c and the drain electrode. Since the capacity coupling of can be reduced,
The potential variation of the lower light-shielding film 501c is caused by the complementary TFT 202.
It is possible to effectively prevent the characteristic of c from being adversely affected.

The gap between the lower light-shielding films 501c may be about 1 μm, for example. Further, even if such a gap exists, the gate electrode itself, which is made of, for example, a conductive polysilicon film, exhibits a certain degree of light absorption, so that the bright-dark pattern that can occur due to the presence of the gap can be relatively small. .

In the fourth embodiment, the lower light-shielding film 501 is used.
A fixed potential may be supplied to the portion of the c except for the island-shaped portion which is arranged to face the complementary TFT 202c, as in the case of the lower light-shielding film 11a in the image display region 10a.

(Fifth Embodiment) An electro-optical device according to a fifth embodiment of the present invention will be described with reference to FIGS. 16 and 17. Here, FIG. 16 is a complementary TFT as an example of a circuit element formed in the frame region in the fifth embodiment.
FIG. 17 is an enlarged plan view of FIG. 17, and FIG. 17 is a DD ′ cross-sectional view thereof. 16 and 17, the same components as those of the first embodiment shown in FIGS. 1 to 9 and the second embodiment shown in FIGS. 10 and 11 are designated by the same reference numerals. The description is omitted.

As shown in FIGS. 16 and 17, particularly in the fifth embodiment, the lower light-shielding film 501d made of a conductive film such as a refractory metal film is used in the semiconductor layer of the complementary TFT as in the second embodiment. The large island-shaped portion divided by 320 as one unit is not set to the floating potential, and is connected to the gate electrode (input side) at the tip of the wiring 316 through the contact hole 503 and is the same as the gate electrode. It is regarded as a potential. Other configurations are shown in FIGS.
This is similar to the case of the second embodiment described with reference to FIG.

Therefore, according to the fifth embodiment, since the back channel can be formed by the island-shaped portion of the lower light-shielding film 501d, the characteristics of the transistor in the complementary TFT 202d can be improved.

In the fifth embodiment, the lower light-shielding film 501 is used.
A portion of the d except the island-shaped portion facing the complementary TFT 202d may be configured to be set to a fixed potential as in the case of the lower light blocking defect 11a in the image display region 10a. .

In each of the embodiments described above with reference to FIGS. 1 to 17, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, TAB (Tape Automated Bonding). The drive LSI mounted on the substrate may be electrically and mechanically connected via an anisotropic conductive film provided in the peripheral portion of the TFT array substrate 10. Further, for example, TN (Twisted) is provided on the side on which the projection light of the counter substrate 20 is incident and on the side on which the emission light of the TFT array substrate 10 is emitted.
Depending on the operation mode such as Nematic) mode, VA (Vertically Aligned) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, etc. and normally white mode / normally black mode It is arranged in a predetermined direction.

(Sixth Embodiment) An electro-optical device according to a sixth embodiment of the present invention will be described with reference to FIGS. 18 to 20. Here, FIG. 18 relates to the sixth embodiment,
FIG. 20 is an enlarged plan view showing the vicinity of the portion indicated by reference symbol A in FIG. 1, and FIG. 19 is an enlarged plan view showing the vicinity of the portion indicated by reference symbol A in FIG. 1 according to the comparative example. In addition, FIG.
It is a fragmentary sectional view which expands and shows the vicinity of the part which attached | subjected the code | symbol CR of FIG. 2 based on 6th Embodiment. 18 to 2
0, the same components as those of the first embodiment shown in FIGS. 1 to 9 and the second embodiment shown in FIGS. 10 and 11 are designated by the same reference numerals, and the description thereof will be omitted.

First, in FIG. 18, the lead-out wiring 206 of the data line 6a is formed on the TFT array substrate 10 as described in the first embodiment, and one end of this lead-out wiring 206 is formed. The TFT 202a forming the sampling circuit 301 described in FIG. 3 is connected. Further, in this figure, the lead wiring 208 of the scanning line 3a (corresponding to an example of the "pattern portion" in the present invention) is formed. This lead wire 20
A scanning line driving circuit (see FIG. 1) is connected to an extension end (not shown) of 8. Further, in this figure, various wirings 210 and 212 are provided for the purpose of supplying a predetermined potential to the counter electrode on the counter substrate 20 (see the upper and lower conducting members 106 in FIG. 1). . Furthermore, the lead-out wiring 206 or the TFT 202a
In contrast, as in the above-described various embodiments, lower light-shielding films 501 and 501a are formed so as to cover them at least partially from the TFT array substrate 10 side (FIG. 4 or FIG. 6 or FIG. 10 or FIG. 11 etc.). The wirings 210 and 212 are the same as in the sixth embodiment.
This corresponds to an example of the “second pattern portion”.

In the sixth embodiment, in particular, in addition to the above-mentioned lower light-shielding films 501 and 501a, the image display area 1
0 as a pixel switching element formed in 0a
A lower light-shielding film 11a (see FIG. 9) that also covers the FT 30 from the TFT array substrate 10 side, and a region formed so as to cover the entire peripheral region located around the image display region 10a. An outer light shielding film 501A is formed. All of the above three types of light-shielding films are formed as the same film, that is, at the same time in the manufacturing process stage.

Of these, the structure of the outside light shielding film 501A,
A more detailed view according to FIG. 18 is as follows.

First, in the upper left portion of the figure, a lower light-shielding film 501 is formed so as to cover the lead wiring 206 (see FIG. 4 or 6). Further, in the lower part of FIG. 18, the TFT 2 which constitutes the sampling circuit 301.
A lower light-shielding film 501a is formed so as to cover 02a (see FIG. 10 or 11). In addition, in this figure, a lower light-shielding film 501z is provided so as to cover the lead-out wiring 208 led out from the scanning line 3a. These have the same purpose as the various lower light-shielding films in the above-described various embodiments and also exhibit the same action.

Then, the outside light-shielding film 5 according to the sixth embodiment.
01A is the lower light-shielding film 501, 501a, and 50 described above.
The region R1 other than the 1z forming region includes the second lower light-shielding film 501Aa integrally formed with these. That is,
The second lower light-shielding film 501Aa is also formed in the frame region (see the thick line in FIG. 18) in the lead wiring 206 or in the region R1 other than the formation region of the TFT 202a and the like. In addition, the outside light shielding film 501A
Is a non-genuine light shielding film 501Ab formed in the gap between the wirings 210 and 212 provided in the region R2 outside the frame region.
including. In addition, below the wiring 210 and below the wiring 212,
The out-of-genuine light shielding film 501Ab may not be formed. That is, the outside genuine light shielding film 501Ab is divided and formed.

In summary, in the sixth embodiment,
As in the case of the wiring 210 or 212, even if it is not formed in the region where various wirings or circuit elements are formed, the outside light-shielding film 501A covers almost the entire surface of the TFT array substrate 10. It will be formed as if.

Such an outside light-shielding film 501A has a structure shown in FIG.
As shown in FIG. 8, it can be seen that a cut is provided at an appropriate position, that is, the outside light-shielding film 501A is divided into islands. In addition, in the sixth embodiment, the distance between the islands of the island-shaped outside light shielding film 501A is set to be 2 μm or less. Such a shape forms the outside light shielding film 501A. At this time, if an appropriate patterning process is performed, it can be easily formed.

Due to the presence of the outside light shielding film 501A, the following operational effects are exhibited. That is, as shown in FIG. 19 as a comparative example, when the outside light shielding film 501A according to the sixth embodiment is not formed, that portion is exposed in a state where the surface of the TFT array substrate 10 is, so to speak, bare. (However, various interlayer insulating films 12 and 4
1, 42, 43 and the like are naturally formed. ). Therefore, there is a possibility that the incident light may pass through the portion “as is”, and this light may be reflected by the light Lo forming the image.
ut (see FIG. 4 or FIG. 6) may affect the image display. For example, when the return light as described above passes through the region R1, is reflected by the frame light-shielding film 53, and passes through the region R1 again, this light is highly likely to be mixed with the light Lout forming the image. Therefore, there is a possibility that a dim image of light is displayed near the edge of the image.

However, in the sixth embodiment, as described above, the second lower light-shielding film 5 including the regions R1 and R2 is included.
Since the outside light shielding film 501A including 01Aa and the genuine outside light shielding film 501Ab is formed, the above-described phenomenon hardly occurs. Therefore, according to the sixth embodiment, it is possible to prevent the occurrence of a dim image of light near the edge of the image, and to display a good-looking and higher-quality image. It will be possible.

In addition, the outside light-shielding film 5 in the sixth embodiment.
01A is divided and formed as described above, or is greatly divided and formed depending on the location, such as the genuine outside light shielding film 501Ab formed in the gap between the wiring 210 and the wiring 212. The internal stress can be relatively reduced as compared with the case where such a light shielding film is formed in a solid shape. Thereby, the outside light shielding film 501
A situation in which A will be destroyed by its own internal stress or a crack will be generated in the surrounding structure (for example, the underlying insulating film 12 etc.) hardly occurs, and a highly reliable electro-optical device is provided. Can be provided.

Incidentally, in the case where the outside light-shielding film 501A in the region R1 and the like is divided and formed, the distance between the islands is set to 2 μm or less, so that the light passing through the gap is kept behind it. After being reflected by the frame light-shielding film 53 or the like, the phenomenon of passing through the gap again hardly occurs. Therefore, the possibility that such light is mixed in the light Lout forming the image is extremely small, and the influence of the gap on the image display is extremely small. As described above, in the sixth embodiment, the outside light-shielding film 501A has its original function, that is, the light around the image is obtained, while obtaining the above-described function and effect due to the island-shaped formation, that is, the effect of reducing the internal stress. The effect of preventing image generation can be enjoyed in the same way.

Although the outside light-shielding film 501A according to the sixth embodiment has been described above as being formed "as if it covers almost the entire surface of the TFT array substrate 10," the present invention is not limited to this. From the viewpoint, the outside light shielding film 501A is
As the name implies, it is not necessary to form it on the "entire surface" of the TFT array substrate 10. In fact, also in FIGS. 18 and 19, the outside light-shielding film 501A has already been divided and formed in appropriate places, and even from this, it is not necessary to form the outside light-shielding film 501A on the “entire surface”. That is clear.

More positively, the outside light-shielding film according to the present invention may be formed, for example, only in the region of the portion WW shown in FIG. In this figure, the portion WW is a portion between the edge portion 801a of the display window formed in the mounting case 800 and the edge portion of the lower light-shielding film 501. Because such a part WW
In other parts, the progress of light is blocked by the presence of the mounting case 800.
This is because it can be considered that the phenomenon of light passage is substantially generated only in the portion WW. Therefore, as shown in FIG.
It is sufficient if it is formed only in
See B and also the progress of the optical LA. ).

According to such a forming mode, light can be effectively shielded, and in this case, the outside light-shielding film 501B only needs to be formed in an appropriate and necessary area. It is possible to further suppress the occurrence of the above-mentioned problems due to the internal stress inside the light shielding film.

Since the electro-optical device according to the above-described embodiment is applied to a projector, three electro-optical devices are used as RGB light valves, and each light valve has an RGB color separation dichroic. The light of each color separated through the mirror is incident as projection light. Therefore, in each embodiment, the counter substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the counter substrate 20 in a predetermined region facing the pixel electrode 9a together with its protective film. With this configuration, the electro-optical device according to each embodiment can be applied to a direct-view type or reflective type color electro-optical device other than the projector. Further, microlenses may be formed on the counter substrate 20 so as to correspond to each pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrode 9a facing the RGB on the TFT array substrate 10. By doing so, a bright electro-optical device can be realized by improving the efficiency of collecting incident light. Furthermore, the counter substrate 20
A dichroic filter that produces RGB colors may be formed by utilizing interference of light by depositing a number of interference layers having different refractive indexes on top. With this counter substrate with a dichroic filter, a brighter color electro-optical device can be realized.

(Embodiment of Electronic Equipment) Next, with respect to an embodiment of a projection type color display device which is an example of an electronic equipment using the electro-optical device described in detail above as a light valve, its overall structure, particularly optical The configuration will be described. FIG. 21 is a schematic sectional view of the projection type color display device.

In FIG. 21, a liquid crystal projector 1100 as an example of the projection type color display device in this embodiment.
Is a projector in which three liquid crystal modules each including a liquid crystal device in which a driving circuit is mounted on a TFT array substrate are prepared and used as RGB light valves 100R, 100G, and 100B, respectively. In the liquid crystal projector 1100, when projection light is emitted from the lamp unit 1102 of a white light source such as a metal halide lamp,
The three mirrors 1106 and the two dichroic mirrors 1108 separate the light components R, G, and B corresponding to the three primary colors of RGB into the light valve 1 corresponding to each color.
00R, 100G and 100B respectively. At this time, in particular, the B light is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. And the light valves 100R, 100G and 1
The light components respectively corresponding to the three primary colors modulated by 00B are combined again by the dichroic prism 1112 and then passed through the projection lens 1114 to the screen 112.
0 is projected as a color image.

The present invention is not limited to the above-described embodiments, but can be appropriately modified within the scope of the gist or concept of the invention which can be read from the claims and the entire specification, and such modifications are accompanied. The electro-optical device and the electronic device are also included in the technical scope of the present invention.

Further, the electro-optical device of the present invention can be applied to an electrophoretic device, an EL device and the like.

[Brief description of drawings]

FIG. 1 is a plan view of a TFT array substrate in an electro-optical device according to a first exemplary embodiment of the present invention, as viewed from a counter substrate side together with respective components formed thereon.

2 is a cross-sectional view taken along the line H-H 'of FIG.

FIG. 3 is a block diagram showing, together with peripheral circuits, equivalent circuits of various elements, wirings, etc. provided in a plurality of pixels in a matrix forming an image display area in the electro-optical device according to the first embodiment of the present invention. is there.

FIG. 4 is a partial cross-sectional view showing the vicinity of a CR portion in FIG. 2 in an enlarged manner.

FIG. 5 is a partial cross-sectional view showing an enlarged portion corresponding to the vicinity of a CR portion in a comparative example.

FIG. 6 is a schematic partial perspective view partially showing a frame light-shielding film, a lead wire for a data line, and a lower light-shielding film out of the portion shown in FIG.

FIG. 7 is a schematic partial perspective view partially showing a frame light-shielding film and a lead-out wiring of a data line in a comparative example.

FIG. 8 is a data line in the electro-optical device according to the embodiment,
FIG. 6 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which scanning lines, pixel electrodes and the like are formed.

9 is a cross-sectional view taken along the line E-E ′ of FIG.

FIG. 10 is an enlarged plan view of a complementary transistor forming a peripheral circuit according to the second embodiment of the present invention.

11 is a cross-sectional view taken along the line A-A ′ of FIG.

FIG. 12 is an enlarged plan view of a complementary transistor forming a peripheral circuit according to a third embodiment of the present invention.

13 is a cross-sectional view taken along the line B-B ′ of FIG.

FIG. 14 is an enlarged plan view of a complementary transistor forming a peripheral circuit according to a fourth embodiment of the present invention.

15 is a cross-sectional view taken along the line C-C ′ of FIG.

FIG. 16 is an enlarged plan view of a complementary transistor forming a peripheral circuit according to the fifth embodiment of the present invention.

FIG. 17 is a cross-sectional view taken along the line D-D ′ of FIG. 16.

FIG. 18 is a plan view showing, in an enlarged manner, the vicinity of a portion denoted by reference symbol A in FIG. 2 in a sixth embodiment of the present invention.

FIG. 19 is a plan view showing, in an enlarged manner, the vicinity of a portion denoted by reference symbol A in FIG. 2 in a comparative example.

FIG. 20 is a partial cross-sectional view showing, in an enlarged manner, the vicinity of the portion denoted by reference character CR in FIG. 2 in the sixth embodiment of the present invention.

FIG. 21 is a schematic cross-sectional view showing a color liquid crystal projector which is an example of a projection type color display device which is an embodiment of an electronic apparatus of the invention.

[Explanation of symbols]

1a ... semiconductor layer, 1a '... channel region, 1b ... low concentration source region, 1c ... low concentration drain region, 1d ... high concentration source region, 1e ... high concentration drain region, 2 ... insulating film,
3a ... scanning line, 6a ... data line, 9a ... pixel electrode, 10
... TFT array substrate, 11a ... Lower light-shielding film, 12 ... Base insulating film, 16 ... Alignment film, 20 ... Counter substrate, 21 ... Counter electrode, 22 ... Alignment film, 30 ... TFT, 50 ... Liquid crystal layer, 53
... Frame light-shielding film, 70 ... Storage capacitor, 71 ... Relay layer, 81,
83, 85 ... Contact hole, 101 ... Data line drive circuit, 104 ... Scan line drive circuit, 114 ... Sampling circuit drive signal line, 115 ... Image signal line, 116 ... Lead wiring, 202 ... TFT, 202a to 202d ... Complementary type TFT, 206 ... Lead wiring, 300 ... Capacitance line, 30
1 ... Sampling circuit, 302 ... TFT, 501 ... Lower light-shielding film

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/30 349 G09F 9/30 349C F term (reference) 2H089 HA04 HA40 JA10 QA05 QA12 RA04 RA05 TA01 TA02 TA07 TA09 TA13 TA17 UA05 UA09 2H091 FA14Y FA31Y FA34Y FA37Y FA41Z FB08 FB09 FC15 FC24 GA01 GA02 GA11 GA13 HA06 HA07 LA02 LA03 LA12 LA16 LA30 MA07 MA10 2H092 GA29 GA32 GA51 GA59 JA02 JA05 NA02 JA02 NA23 NA02 JA02 NA02 NA02 QA07 QA09 QA15 RA05 RA10 5C094 AA03 BA03 BA43 DA13 DA15 EB02 ED15 FA01 HA08 JA08

Claims (25)

[Claims] 1. A display electrode arranged in an image display region on a substrate, and a frame region which is directly connected to the display electrode via a pixel switching element or which defines the periphery of the image display region. A pattern portion formed of at least one of a wiring and a circuit element provided on the substrate, and a lower light-shielding film that partially covers the pattern portion from the substrate side in a part of the frame region. Electro-optical device. 2. The electro-optical device according to claim 1, further comprising a frame light-shielding film disposed above the pattern portion in the frame region. 3. The electrical device according to claim 1, wherein the lower light-shielding film is formed on the flat surface of the substrate directly or through a flat underlying insulating film. Optical device. 4. The circuit element includes a first transistor, the display electrode includes a pixel electrode, and the electro-optical device includes a second transistor connected to the pixel electrode as the pixel switching element. The electro-optical device according to any one of claims 1 to 3, further comprising: the wiring connected to the second transistor. 5. The electro-optical device according to claim 4, wherein the same film as the lower light-shielding film is provided at least under the channel region of the second transistor. 6. The electro-optical device according to claim 1, wherein the lower light-shielding film is made of a light absorbing film. 7. The electro-optical device according to claim 6, wherein the light absorption film includes at least one of a polysilicon film and a refractory metal film. 8. The electro-optical device according to claim 1, wherein the lower light-shielding film is formed in an island shape. 9. The electro-optical device according to claim 1, wherein the lower light-shielding film is made of a conductive film. 10. The lower light-shielding film is at least partially supplied with a fixed potential.
The electro-optical device according to. 11. The electro-optical device according to claim 9, wherein at least a portion of the lower light-shielding film stacked below the first transistor has a floating potential. 12. The lower light-shielding film, at least a portion of the lower light-shielding film laminated below the first transistor, and the lower light-shielding film facing the source electrode of the first transistor. 2. The film includes a portion provided in an island shape so as to mutually separate a portion of the film facing the drain electrode of the first transistor from each other.
1. The electro-optical device according to 1. 13. A portion of the lower light-shielding film laminated at least under the first transistor, a portion of the lower light-shielding film facing the source electrode of the first transistor, and the lower portion of the lower light-shielding film. The electro-optical device according to claim 9, wherein a slit is provided so as to separate a portion of the side light-shielding film that faces the drain electrode of the first transistor. 14. The electro-optical device according to claim 9, wherein the lower light-shielding film is not stacked below the channel region of the first transistor. 15. The gate potential of the first transistor according to claim 9, wherein at least a portion of the lower light-shielding film laminated below the channel region of the first transistor is set to a gate potential of the first transistor. Electro-optical device. 16. The lower light-shielding film is provided in a frame area extending from an outer periphery of the image display area to a peripheral side by a predetermined width preset according to an incident angle of an incident light portion with which the frame area is irradiated. The electro-optical device according to claim 1, wherein the electro-optical device is formed. 17. A display electrode arranged in an image display region on a substrate, and a frame region which is directly connected to the display electrode via a pixel switching element or which defines the periphery of the image display region. A pattern portion formed of at least one of a wiring and a circuit element provided in, a lower light-shielding film that covers the pattern portion at least partially from the substrate side in a part of the frame area, and the inside of the frame area. An electro-optical device comprising: a second lower light-shielding film which is formed in a region other than the formation region of the pattern portion and which is formed as the same film as the lower light-shielding film. 18. A display electrode disposed in an image display area on a substrate, and provided in a frame area which is connected to the display electrode through a pixel switching element and defines the periphery of the image display area. A pattern part formed of at least one of the wiring and the circuit element, a lower light-shielding film that covers the pattern part at least partially from the substrate side in a part of the frame region, and a first part as the pixel switching device. At least a part of a peripheral region that covers at least the channel region of the two transistors from the substrate side and is formed as the same film as the lower side light shielding film, and a peripheral region including the frame region and located around the image display region. An electro-optical device comprising: a lower light-shielding film and an outer light-shielding film formed as the same film as the inner light-shielding film. 19. The outside light-shielding film includes a second lower light-shielding film formed as the same film as the lower light-shielding film in a region other than a region where the pattern portion is formed in the frame region. The electro-optical device according to claim 18, which is characterized in that. 20. The peripheral region further comprises a peripheral circuit connected to the pattern portion and for driving the display electrode, wherein the extraneous light-shielding film constitutes the peripheral circuit. 20. The electricity according to claim 18, which is formed in a region other than a formation region of the second pattern portion that connects at least one set between the wirings, between the circuit elements, and between the wirings and the circuit elements. Optical device. 21. The electro-optical device according to claim 17, wherein the outside light-shielding film is formed in an island shape. 22. The electro-optical device according to claim 21, wherein a distance between adjacent islands is 4 μm or less. 23. A mounting case, which mounts the electro-optical device and has a display window corresponding to the image display region, is further provided, and at least the second lower light-shielding film and the outside light-shielding film. 23. The electro-optical device according to claim 17, wherein one is at least partially formed in a region between an edge of the display window and an edge of the image display area. . 24. The frame light-shielding film arranged above the pattern portion in the frame region is further provided, and the frame light-shielding film contains at least aluminum. The electro-optical device according to the item. 25. An electronic apparatus comprising the electro-optical device according to claim 1. Description: