JP2003166056A - Plasma sputtering method for forming thin film, and film- forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma-assisted sputtering method for forming a thin film, which deposits a large area of crystallized and highly dense thin-film on a substrate, and to provide a film-forming apparatus. <P>SOLUTION: This method comprises arranging several pairs of microwave antennas, vertically to the travelling direction of the substrate to be thin-film- deposited, namely on both the transverse sides of the substrate, in the plasma sputtering apparatus using magnetron, and irradiating the substrate surface with microwave from both transverse sides of the substrate, to form assisted plasma in proximity to the substrate surface; and arranging a set of magnets consisting of several magnets beneath the substrate, forming an arched mirror magnetic field for confining plasma, in a region where the assisted plasma is to be formed in proximity to the substrate surface, vibrating the set of magnets in a transverse direction of the substrate, enhancing effective strength of the arched magnetic field above the substrate surface, and achieving uniformity of the assisted plasma in the transverse direction of the substrate, all over the surface of a large area. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

The present invention relates to a thin film forming method and a film forming apparatus by plasma sputtering, and more particularly to a large area thin film forming method and a film forming apparatus by sputtering having a plasma enhanced region.

[0002]

2. Description of the Related Art As a process for industrially continuously forming a functional thin film such as an optical thin film on a sheet-shaped substrate surface, three methods, a WET method (Sol-Gel method), a CVD method and a PVD method are industrial processes. Has been put into practical use. Among these processes, the optimum method is selected depending on the composition of the thin film, the number of layers of the film, and the kind of substrate material.

The substrate size is large (for example, 1 m × 2 m).
In the case of the industrial continuous production described above), the PVD method is a practical process as a practical process because of the uniformity of film quality in a large area, the ease of realizing a multilayer film, and the fact that substrate heating is not required. Magnetron sputtering method is used as a standard process. This method is the only practical continuous film forming process even for a plastic substrate having a strict upper limit of allowable temperature. This standard sputtering continuous deposition process has undergone several partial improvements resulting in current market demands for film quality homogeneity over large areas and fast deposition, or productivity. It satisfies the technical requirements as a film forming process for many thin films.

However, this standard process is also capable of producing a new functional film, for example, a large area TiO ₂ —SiO ₂ type photoactive sheet material (glass substrate, plastic substrate), excellent weather resistance and at low cost. There is a problem in practicability in forming a film of a large-area antireflection plastic material or the like. The former sheet material is required to have a TiO ₂ film having an anatase-type crystal structure, and the latter plastic material is required to have a more dense structure. Until now, improvements in the magnetron magnetic field (unbalanced magnetron) have been made, but TiO
_In the case of _two films, the film structure is amorphous, and a thin film having a crystalline structure unless the substrate is preheated to 350 ° C. or higher or a secondary heating process of 450 ° C. or higher is added after the film formation process. Can't get Further, the weather resistance of the antireflection film formed on the plastic substrate (for example, MMA substrate) is considerably inferior to that of the antireflection film formed on the glass substrate.

[0005]

A large-area continuous film forming process which has the advantages of the magnetron sputtering method described above and further has a function of modifying the film structure (crystallization, densification, control of internal stress). Is required to be put into practical use.

In a typical film forming environment (a typical traveling substrate, sputtering cathode and anode arrangement), the plasma density near the substrate surface is increased 10 ³ to 10 ⁴ times in order to modify the film structure. When the flying molecules (atoms) are excited to a high internal energy level immediately before film formation,
The rise in the temperature of the plasma density causes ion bombardment, which conversely deteriorates the film structure.

Therefore, the present invention not only enhances the plasma density, but also optimizes the level, the spatial distribution of the density (geometrical relationship with the substrate), etc., and controls them precisely, An object of the present invention is to obtain an apparatus and method that can achieve crystallization and densification without preheating the substrate.

Furthermore, the present invention provides an ECR (electron cyclotron resonance) plasma assisted sputtering thin film manufacturing apparatus and method which can be used in combination with an in-line magnetron sputtering apparatus which is currently in practical use.

[0009]

[MEANS FOR SOLVING THE PROBLEMS] A microwave ECR plasma source using an antenna specially designed so as to be compatible with a deposition environment of a conventional magnetron plasma sputtering system for forming a thin film on a substrate, and an arch shape. A plasma assist method combined with a mirror magnetic field forms an assist plasma for enhancing the plasma density in the space near the substrate by several orders of magnitude.

Therefore, a magnet array (magnet bank) made up of a plurality of specially arranged magnets is arranged on one side of the substrate, and a mirror magnetic field is formed so that magnetic lines of force are arched near the surface on the other side of the substrate. It is formed to form a sheet-shaped plasma holding region. In addition, a pair or a plurality of pairs of special microwave antennas are arranged at a position perpendicular to the traveling direction of the substrate, that is, on both sides of the substrate width, and preferably at a position distant from the surface of the other side of the substrate, Microwaves are radiated from both sides in the direction orthogonal to the traveling direction of the substrate to the surface of the other side of the substrate to generate electron cyclotron resonance plasma in the above region, and this is held in the above region to form a reinforcement assisting plasma. . Preferably, the magnet array is vibrated (moves periodically) in the width direction of the substrate, and the period and amplitude of the vibration are adjusted to increase the effective strength of the arched magnetic field on the other surface of the substrate. And, the uniformity of the assisting plasma in the substrate width direction is achieved over the surface of a large area.

JP-A-6-220631, JP-A-6-20631
Japanese Patent Laid-Open No. 45093 and Japanese Patent Laid-Open No. 7-183098 disclose a sputtering apparatus that uses ECR by the cooperation of a magnetic field of a magnetron and a microwave. Each of these has a magnet on the target surface on the side opposite to the target surface on the side facing the substrate, and is irradiated with microwaves in the vicinity of the target surface on the side facing the substrate. The ECR area is formed in the vicinity.

On the other hand, in the present invention, the ECR region is formed near the surface of the substrate on which the thin film is formed, and the reinforcing assist plasma is formed there, not near the target surface as described above. In order to achieve this, the magnet is arranged near the surface of the substrate opposite to the side facing the target, and the microwave is radiated in the vicinity of the surface of the substrate facing the target. In one embodiment,
The radiated microwave is in the direction perpendicular to the traveling direction of the substrate,
That is, it propagates in a beam shape over a long distance in the longitudinal direction of the target to form a beam-shaped electromagnetic field. This electromagnetic field cooperates with an arched mirror magnetic field formed by a magnet arranged near the surface of the substrate opposite to the side facing the target, to generate a "long distance" near the surface of the substrate facing the target. This forms a sheet-like plasma that covers. In the present invention, by adopting such a configuration, the effect of the present invention that could not be achieved at all by the above-described conventional technology, that is, large area continuous film formation can be achieved, and the film structure can be modified. (Crystallization, densification, control of internal stress) can be achieved.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an example of the structure of a sputtering apparatus according to the present invention. FIG. 2 shows the structure of a conventional sputtering apparatus used in a sputtering system. 1 and 2,
The device is placed in a vacuum chamber. TP represents T plasma generated near the surface of the magnetron target 3,
SP represents S plasma (assisting plasma) generated in the vicinity of the surface of the substrate 1 according to the present invention. As shown in the figure, in the conventional sputtering apparatus, a strong plasma region (TP) exists only near the magnet 3 of the magnetron cathode 2,
In the device of the present invention, a strong plasma region (SP) is also generated near the substrate surface.

In addition to the constituent elements of the conventional sputtering apparatus shown in FIG. 2, constituent elements added to the apparatus of the present invention shown in FIG. 1 are the helical antennas A1 to A4 for microwave radiation.
And A5 to A8, a microwave waveguide 4 for supplying power to the antenna, a microwave power supply (not shown), a magnet array 5 for generating an arched mirror magnetic field, and the magnet array is vibrated in the lateral direction of the substrate. Drives K ₁ , K ₂ , for
There is an SP plasma control device (not shown) for the purpose of monitoring and controlling the plasma intensity. The helical antennas A1 to A4 and A5 to A8 are antenna rows arranged in pairs parallel to the substrate on both sides in the lateral direction of the substrate.
It is for introducing microwaves for plasma generation onto the substrate surface. The arrangement configuration of these antennas and magnets will be described later. The transport roll 6 is for transporting the substrate. It is also possible to provide a drive device for vibrating the magnet array in the width direction of the substrate to vibrate the magnet array in the width direction of the substrate. The amplitude that vibrates the magnet array in the board width direction is 0 to 100 mm, the vibration cycle is 0 to 0.5 Hz, and the vibration mode (vibration waveform)
Can have an arbitrary shape such as a triangular waveform or a sine waveform.

In the present invention, the substrate can be transferred into the vacuum chamber substantially horizontally as described above, or the substrate can be transferred into the vacuum chamber substantially vertically or in a state of being inclined by 20 degrees from the vertical. Preferably, the substrate is transported substantially vertically. Also in this case, the above description of FIGS. 1 and 2 is similarly applied. A method of vertically transporting the substrate is known, for example, the surface of the vertically adjacent substrate in the vicinity of the upper end is sandwiched at a plurality of positions by a pair of rolls from both sides, and the lower end of the substrate is placed on a plurality of rolls. A method of transporting these rolls by rotating them, or setting the substrate in a transport frame, suspending the top of the frame with a chain and placing the bottom of the frame on multiple rolls, and rotating the rolls by moving the chains. Examples include a method of carrying the material at least.

FIG. 3 schematically shows an example of a substrate horizontal transfer type in-line magnetron plasma sputtering system which is currently in practical use. 12 in total
The base sputtering devices are arranged in series in the traveling direction of the substrate. Three sputtering devices are arranged in each of zones 1 to 4. The film structure of the thin film functional material product by the present dry process is a multilayer film in many cases, and each film is sequentially laminated in the process of passing through each sputtering device installed in zones 1 to 4 to form a multilayer film structure. . Generally, in a multilayer film, there is a layer that plays an important role in controlling a specific film function and its performance. For example, as the photocatalyst film, anatase crystallized TiO _{2 is used.}
As a functional film which is a photoactive film and has high weather resistance and large mechanical strength, a highly dense Si ₃ N ₄ film is used. To form such a high-performance membrane layer, the device of the present invention is installed, for example, in zone 3.

FIG. 4 shows an example of the arrangement of the helical antennas A1 to A4 arranged on one side of the substrate in the lateral direction. As the helical antenna described in Japanese Patent Publication No. 7-50844, microwaves can be radiated along the substrate surface with high radiation efficiency to generate high-density plasma near the substrate surface. . The antennas A1 to A8 shown in FIGS. 1 and 4 are shown as an example, and the shape, number, and arrangement of the antennas are not limited as long as they can generate a high density of plasma near the substrate along the surface of the substrate. It is not limited to this.

The microwave oscillator used in this device is
Preferably, two units having an industrial practical frequency of 2.45 GHz and a microwave output power of 5 to 15 kW are used.
The microwave power is preferably continuously variable to adjust the density of the generated plasma.

FIG. 5 shows an example of a magnet array for forming an arched mirror magnetic field.
Two rows of magnets are arranged in the substrate traveling direction (X axis). 5A is a plan view and FIG. 5B is Y.
It is sectional drawing which follows an axis. FIG. 6 shows an example of a magnet arrangement, and FIG. 6A shows a case where the magnets are arranged in an orthogonal arrangement.
(B) shows the case where the magnets are obliquely arranged. FIG. 7 is a perspective view of a part of the magnet array, and exemplarily shows how the arched mirror magnetic field is generated. Shims are inserted between the magnetic poles as needed to adjust the magnetic field strength distribution in the X direction. The typical dimensions of the magnet are 20 x 50 x 50 mm.

The distance H ₀ from the substrate surface to the magnet array upper surface is 15 mm or less, and the distance H ₁ from the substrate surface to the antenna center line is 25 to 50 mm.

The distance from the lower surface of the substrate to the upper surface of the magnet array is 5 mm or more. By providing the magnet array on the side of the substrate surface opposite to the target in this way, not only the local magnetic field formation near the substrate surface can be facilitated, but also the magnets can be completely protected from sputtering contamination.

The thickness of the substrate depends on the size of the substrate and is usually 1 to 15 mm. 2.5 for glass substrates
× 3 to 15 mm for large area such as 3.7 m
It is about 1 to 6 m for relatively small areas
It is about m. Substrates include glass, ceramics,
Not limited to plastics, many non-ferrous metal materials can be used. Further, the following plastic film or sheet can also be used.

The intensity of the assisting plasma is finely adjusted by changing the oscillation intensity of the microwave. The intensity of plasma may be directly monitored by its spectrum.

In the present invention, the antenna and the magnet array are constructed as described above, and the plasma (SP) near the substrate is formed.
Can be made high in density and uniform over the width of the substrate. Further, the SP plasma density can be freely changed by adjusting the microwave input power and the height of the antenna from the substrate surface. For example, the microwave input power is continuously variable from 0 to 10 kW.

In the present invention, the pressure in the vacuum chamber is preferably 0.01 to 3 Pa, more preferably 0.
It is 01 to 0.3 Pa. When the pressure is 1 Pa or more, the pressure in the waveguide is preferably 0.01 to 0.3P.
It is preferable to adjust the pressure to a, more preferably around 0.3 Pa, for example, using a vacuum pump or the like.

According to the configuration of the present invention, the measured maximum plasma density is 10 10 to ¹¹ / cm ³ , which is about 10 ⁴ times higher than the measured value at the same position in the conventional plasma-assisted sputtering apparatus.

A thin film can be formed on a plastic film or sheet (substrate) by using the plasma sputtering method and apparatus of the present invention. Thereby, for example, a thin film having an anatase type crystal structure of TiO ₂ can be applied on a plastic film or sheet, and a non-reflective film having remarkably good weather resistance can be applied on the plastic film or sheet. can do.

FIG. 11 shows an example of the structure of a sputtering apparatus for forming a thin film on the above plastic film or sheet, and is a side view seen from a direction perpendicular to the traveling direction of the plastic film or sheet. Is. The sputtering apparatus has basically the same structure as the above-mentioned sputtering apparatus, and is applied to the formation of a thin film on a plastic film or sheet running on the outer peripheral surface of a hollow cylindrical roll. In the sputtering apparatus, as shown in FIG. 11, the plastic film or sheet wound from the left roll is conveyed on the outer peripheral surface of the hollow cylindrical roll 106. Then, at a predetermined position of the hollow cylindrical roll, the metal released from the magnetron cathode (target) is applied onto the plastic film or sheet.
The plastic film or sheet is then wound up on the right roll. In FIG. 11, the number of the magnetron cathodes 102 and the number of the magnet arrays 105 are each one, but a plurality, preferably two or three, can be arranged if desired. This allows multiple thin films of different types to be coated on a plastic film or sheet. As the substance to be coated, for example,
_{TiO 2, SiO 2, Al 2} O 3 and the like. The thickness of each thin film can be appropriately changed depending on the application and the like, but is usually 30 to 300 nm.

The hollow cylindrical roll 106 is for conveying a plastic film or sheet, and is preferably a non-ferromagnetic material (paramagnetic material) such as aluminum.
It may be made of copper or the like.

The thickness of the plastic film or sheet is usually 0.01 to 2.0 mm, preferably 0.05 to 2.0 mm.
It is 0.5 mm. As the plastic film or sheet, all known materials can be used. Examples thereof include polymethyl methacrylate (MMA), polymethyl acrylate, polyvinyl chloride, polyvinylidene chloride, polyethylene, polypropylene, polyethylene glycol, polyethylene terephthalate, polyvinyl butyral, polyvinyl fluoride, polyvinylidene fluoride, and polycarbonate.

[0031]

【Example】

[Embodiment 1] FIG. 8 is a perspective view schematically showing a part of a plasma-assisted sputtering thin film manufacturing apparatus according to an embodiment of the present invention. AR1 to AR4 are antenna arrays on the right side in the board traveling direction, and AL1 to AL4 are antenna arrays on the left side in the board traveling direction. This device was placed in a vacuum chamber 7 similar to a conventional sputtering device. Figure 9
FIG. 9 is a partial lateral cross-sectional view of the substrate when the apparatus shown in FIG. 8 is arranged in the vacuum chamber 7. FIG. 10 is a perspective view of a magnet array arranged below the substrate. As for the magnets, Nx = 20 magnets were arranged on the soft iron yoke in the lateral direction of the substrate over a width of 3000 mm, and Ny = 4 rows were arranged over a length of 400 mm in the substrate traveling direction (Y-axis direction).

The size of the substrate is 2.5 × 3.7 m (width 3.7).
m), the thickness was 6 mm, and the standard speed in the traveling direction (Y direction) of the substrate was 1 m / min.

The magnets had a size of 20 × 50 × 50 mm, and 20 magnets were arranged in the substrate width direction, and the magnets were arranged in four rows in the substrate advancing direction. The magnet is NM made by Sumitomo Special Metals
The residual magnetic flux of X-48 was 1.4T.

The microwave oscillator is TMG-49 manufactured by Toshiba.
There are two 1AR frequencies of 2.45 GHz and an output of 5 kW. There were two waveguides for Toshiba WRJ-2 for 20 kW.

The microwave power meter is TMU-61 manufactured by Toshiba.
It was for 3A incident reflected power monitor.

The degree of vacuum in the vacuum chamber was set to 0.3 Pa using a commonly used exhaust device (not shown).

An argon plasma generating gas was introduced into the vacuum chamber.

TiO ₂ (80% by weight of anatase crystal layer
A film of 250 nm thick was deposited on the substrate.

[0039]

[Embodiment 2] FIG. 12 is a diagram schematically showing a part of a plasma-assisted sputtering thin film manufacturing apparatus of the present invention for forming a thin film on a plastic film. The upper view of FIG. 12 is a side view seen from the direction perpendicular to the traveling direction of the plastic film 101, and the lower view of FIG. 12 is a plan view. AR1 to AR4 are antenna arrays on the right side in the board traveling direction, and AL1 to AL4 are antenna arrays on the left side in the board traveling direction. A magnetron cathode (sputtering target: 102) is installed in the sputtering zone. 102 is titanium. A magnet array (105) under the plastic film at a position corresponding to the magnetron cathode.
Is installed. The magnet array and the magnets constituting it are the same as those used in the first embodiment. This device was placed in a vacuum chamber similar to a conventional sputtering device. The plastic film is conveyed on the hollow cylindrical roll 106 in the same manner as shown in FIG. The hollow cylindrical roll 106 was made of aluminum, and each dimension had an outer diameter of 500 mm, an inner diameter of 490 mm (thickness of 5 mm) and a width of 3000 mm. Further, cooling water was passed through the hollow cylindrical roll.

The width of the plastic film is 2.7.
Polymethylmethacrylate having a thickness of m and a thickness of 0.05 mm was used. The standard speed in the traveling direction of the plastic film was 10 m / min.

The microwave oscillating device (MWPS), the waveguide (WG), the microwave power meter, and the exhaust device were all the same as in Example 1. The degree of vacuum in the vacuum chamber was set to 0.3 Pa, and an argon plasma generation gas was introduced into the vacuum chamber.

TiO ₂ (anatase crystal layer) film is 40 n
m thickness was deposited on a plastic film.

Tables 1 and 2 show a comparison between the sputtering apparatus according to the present invention and the prior art.

[0044]

[Table 1]

[0045]

[Table 2]

[0046]

According to the present invention, since it is possible to achieve high density, uniform and fine adjustment in the vicinity of the substrate surface, it is possible to obtain a large-area crystallized film, which has not been obtained by the conventional standard magnetron sputtering method. It is possible to obtain a high quality film, a highly dense film, and a proper internal stress retaining film.

By using the glass or plastic substrate obtained by the present invention, a large-area photoactive window material (high-performance window material having photocatalytic properties and superhydrophilicity) can be obtained. Further, the plastic film or sheet obtained by the present invention is useful for, for example, food packaging, pharmaceutical packaging, medical equipment and the like.

[Brief description of drawings]

FIG. 1 shows a schematic structure of a sputtering apparatus according to the present invention.

FIG. 2 shows a schematic structure of a conventional sputtering apparatus.

FIG. 3 is a schematic diagram of a typical in-line magnetron plasma sputtering system.

FIG. 4 shows an example of an arrangement configuration of helical antennas A1 to A4 arranged on one side of a substrate in the lateral direction according to the present invention.

FIG. 5 shows an example of a magnet array for forming an arched mirror magnetic field near the surface of a substrate according to the present invention.

6A and 6B show examples of a magnet array according to the present invention, where FIG. 6A shows a case where the magnets are arranged orthogonally, and FIG. 6B shows a case where the magnets are arranged obliquely.

FIG. 7 is a perspective view of a portion of a magnet array according to the present invention, illustrating how an arcuate mirror magnetic field is generated.

FIG. 8 is a perspective view schematically showing a part of the plasma-assisted sputtering thin film manufacturing apparatus of one embodiment according to the present invention.

9 is a lateral cross-sectional view of a part of the substrate when the apparatus shown in FIG. 8 is arranged in a vacuum chamber.

FIG. 10 is a perspective view of a magnet array arranged below the substrate in the apparatus shown in FIG.

FIG. 11 shows an example of the structure of a sputtering apparatus of the present invention for forming a thin film on a plastic film or sheet,

FIG. 12 is a diagram schematically showing a part of the sputtering apparatus of the present invention for forming a thin film on a plastic film.

[Explanation of symbols]

1: Substrate 2: Dual Magnetron Cathode 3: Magnet in Dual Magnetron Cathode 4: Microwave Waveguide 5: Magnet Arrangement 6: Substrate Transfer Roll 7: Vacuum Chamber 101: Plastic Film or Sheet (Substrate) 102: Dual Magnetron Cathode 103: Magnets in dual magnetron cathode 105: Magnet array 106: Hollow rolls A1 to A8, AR1 to AR4, AL1 to AL4 for conveying plastic film or sheet: Microwave radiation antenna SP: Plasma near the substrate TP: Magnetron cathode Areas K ₁ , K _2, K near the target surface of the magnet: Magnet array vibration drive device

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shigeyuki Ishii             5180 Kurokawa, Kosugi-cho, Imizu-gun, Toyama Prefecture Toyama Prefectural University             On campus F-term (reference) 4K029 AA11 AA25 BA46 BA48 CA05                       DC43 DC46 DC48 KA03

Claims (26)

[Claims] 1. A method for forming a thin film on a substrate by plasma sputtering in a vacuum chamber having a magnetron cathode therein, wherein (a1) a magnet array composed of a plurality of magnets is arranged opposite to the magnetron cathode of the substrate. And forming a sheet-shaped plasma holding region by forming a mirror magnetic field so that the magnetic force lines are arched near the surface of the substrate on the magnetron cathode side of the substrate, and (a2) advancing the substrate. Direction from a direction perpendicular to the direction of the substrate to radiate a microwave in the vicinity of the surface on the other side of the substrate to generate an electron cyclotron resonance plasma in the region, which is held in the region to be a reinforcement assisting plasma. Sputtering thin film formation method. 2. The method of forming a sputtering thin film according to claim 1, further comprising the step of: (a3) vibrating the magnet array in a substrate width direction to make the reinforcement assisting plasma substantially uniform over the substrate width direction. 3. In the step (a1), the magnet array is arranged on the side of the substrate opposite to the magnetron cathode so that the plurality of magnets are arranged in a line substantially perpendicular to the substrate traveling direction. 3. The method for forming a sputtering thin film according to claim 1 or 2, wherein a plurality of the magnet rows are arranged substantially parallel to each other along the traveling direction of the substrate. 4. In the step (a2), the step of radiating a microwave is performed by arranging a plurality of pairs of helical antennas on both sides of the substrate width, and by arranging a plurality of pairs of helical antennas on the surface of the substrate on the magnetron cathode side. The method for forming a sputtering thin film according to any one of claims 1 to 3, wherein the sputtering thin film is formed along a line. 5. The vibrating the magnet array in the substrate width direction in the step (a3) comprises periodically vibrating in a sine wave shape or a triangular wave shape.
4. The method for forming a sputtering thin film according to any one of 4 to 4. 6. The method for forming a sputtering thin film according to claim 1, wherein the substrate is transported in a vacuum chamber in a state of being substantially horizontal or substantially vertical or inclined by 20 degrees from vertical. 7. A method for forming a thin film on a plastic film or sheet by plasma sputtering in a vacuum chamber having a magnetron cathode therein, comprising: (a0) rotating the hollow cylindrical roll of the plastic film or sheet. And (a1) disposing a magnet array composed of a plurality of magnets inside the hollow cylindrical roll and near the inner peripheral surface independently of the hollow cylindrical roll, A step of forming a sheet-shaped plasma holding region by forming a mirror magnetic field in the vicinity of the surface of the film or sheet on the side of the magnetron cathode so that the magnetic force lines are arched; and (a2) the advancing direction of the plastic film or sheet From both sides in the right angle direction, A method of irradiating a microwave near the surface of the magnetron cathode side to generate an electron cyclotron resonance plasma in the region, and holding the electron cyclotron resonance plasma in the region to form a reinforcement assisting plasma. 8. (a3) The method further includes a step of vibrating the magnet array in the width direction of the plastic film or sheet to make the reinforcing assistance plasma substantially uniform in the width direction of the plastic film or sheet. The method for forming a sputtering thin film according to claim 7. 9. In the step (a1), the magnet array is arranged inside the hollow cylindrical roll and in the vicinity of the inner peripheral surface thereof so that the plurality of magnets are substantially perpendicular to the traveling direction of the plastic film or sheet. 9. The sputtering thin film forming method according to claim 7, wherein the plurality of magnet rows are arranged in parallel with each other to form a magnet row, and the plurality of magnet rows are arranged substantially parallel to each other along the traveling direction of the plastic film or sheet. 10. In the step (a2), the step of radiating a microwave is performed by arranging a plurality of pairs of helical antennas on both sides of the width of the plastic film or sheet so that the helical antenna is provided on the surface of the plastic film or sheet. The method for forming a sputtering thin film according to any one of claims 7 to 9, comprising radiating along the surface of the plastic film or sheet. 11. The vibrating the magnet array in the width direction of the plastic film or sheet in the step (a3) comprises periodically vibrating in a sine wave shape or a triangular wave shape. The method for forming a sputtering thin film according to any one of 1. 12. A film forming apparatus having a vacuum chamber containing a magnetron cathode for plasma sputtering therein, wherein a plasma forming space is formed between a substrate on which a thin film is formed and a target of the magnetron cathode. A magnet array composed of a plurality of magnets arranged on the side of the substrate opposite to the magnetron cathode, and a pair or a plurality of pairs of micros arranged on both sides of the substrate width in a direction perpendicular to the traveling direction of the substrate. Deposition apparatus having a wave antenna. 13. The film forming apparatus according to claim 12, further comprising a driving device that vibrates the magnet array in the substrate width direction. 14. The film forming apparatus according to claim 12, wherein the microwave antenna is a helical antenna. 15. The film forming apparatus according to claim 12, wherein the magnet array is composed of a plurality of magnets arranged in a matrix extending vertically and horizontally on a plane parallel to the substrate. 16. The film forming apparatus according to claim 15, wherein the magnet array is configured such that magnet rows adjacent to each other in the substrate advancing direction are displaced from each other in the substrate width direction. 17. The film forming apparatus according to claim 12, wherein drive devices for vibrating the magnet array in the substrate width direction are arranged on both sides of the substrate, respectively. 18. The driving device for vibrating the magnet array in the width direction of the substrate comprises periodically vibrating the magnet array in a sine wave shape or a triangular wave shape. The film forming apparatus described. 19. The film forming apparatus according to claim 12, wherein the substrate is arranged in a vacuum chamber in a state of being substantially horizontal or substantially vertical or inclined from the vertical by 20 degrees. 20. A film forming method, comprising a vacuum chamber containing a magnetron cathode for plasma sputtering therein, and forming a plasma forming space between a plastic film or sheet having a thin film formed on a surface thereof and a target of the magnetron cathode. In the apparatus, the plastic film or sheet, by rotating the hollow cylindrical roll, the hollow cylindrical roll to be conveyed on the outer peripheral surface, the hollow cylinder inside the hollow cylindrical roll and near the inner peripheral surface A magnet array composed of a plurality of magnets arranged independently of the rolls, and a pair or plural pairs of microwaves arranged on both sides of the width of the plastic film or sheet in a direction perpendicular to the traveling direction of the plastic film or sheet. A film forming apparatus having an antenna. 21. The film forming apparatus according to claim 20, further comprising a driving device that vibrates the magnet array in the width direction of the plastic film or sheet. 22. The film forming apparatus according to claim 20, wherein the microwave antenna is a helical antenna. 23. The film forming apparatus according to claim 20, wherein the magnet array is composed of a plurality of magnets arranged in a matrix in a vertical and horizontal directions on a plane parallel to the plastic film or sheet. 24. The film forming apparatus according to claim 23, wherein the magnet array is configured such that magnet rows adjacent to each other in a traveling direction of the plastic film or sheet are displaced from each other in a width direction of the plastic film or sheet. 25. A drive device for vibrating the magnet array in the width direction of the plastic film or sheet,
The film forming apparatus according to any one of claims 20 to 24, which is arranged on both sides of the plastic film or sheet. 26. A drive device for vibrating the magnet array in the width direction of the plastic film or sheet,
The film forming apparatus according to any one of claims 20 to 25, wherein the magnet array is periodically vibrated in a sine wave shape or a triangular wave shape.