JP2003163248A - Semiconductor wafer resistivity measuring apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer resistivity measuring apparatus that does not require a probe replacement operation by a technician and can reduce time required for the replacement. <P>SOLUTION: The measuring apparatus comprises a plurality of quadplex probes for measuring resistivity of a semiconductor wafer by contacting the upper face of the wafer placed on a measuring stage, wherein one of a plurality of units for vertically driving the probes, which are selected in accordance with a type of the semiconductor wafer, is operated for selection of an appropriate quadplex probe. The selected probe measures resistivity of the semiconductor wafer. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer resistivity measuring device used in a semiconductor manufacturing device, and more particularly to a semiconductor wafer resistivity measuring device.
The present invention relates to a resistivity measuring device using a probe method.

[0002]

2. Description of the Related Art A semiconductor wafer resistivity measuring apparatus is used for measuring the resistivity of a silicon wafer, the resistivity of an epitaxial growth film formed on the wafer surface, and the sheet resistance of a diffusion layer or an implantation layer when impurities are diffused or implanted from the surface. And the sheet resistance of the metal film formed on the surface, and the measurement results are fed back to the process conditions of each semiconductor manufacturing equipment, which is one of the important measuring equipment to keep the quality of semiconductor devices uniform. Yes (Patent No. 3149
See No. 400).

FIG. 18 is a block diagram showing a structural outline of a semiconductor wafer resistivity measuring device proposed by Japanese Patent No. 3149400. The 4-probe probe 4 controlled based on the control information from the operation unit 3 comes into contact with the upper surface of the semiconductor wafer 2 placed on the measurement stage 1, and the electrical resistivity from the measurement unit 5 measures the resistivity. Be seen. The probe up-and-down drive unit 6 has a role of lowering the 4-probe probe 4 onto the wafer based on control information from the operation unit to bring it into contact with the semiconductor wafer 2. The probe horizontal drive unit 7 moves the probe vertical drive unit 6 and the 4-probe probe 4 in the diameter direction of the semiconductor wafer 2, and the rotation drive unit 8 rotates the measurement stage 1 on which the semiconductor wafer 2 is arranged. The operation of both 7 and 8 has a function of enabling measurement at a desired position on the semiconductor wafer 2. The power supply unit 9 supplies power to the control unit 10, and the display unit 11 displays measurement position information,
Display measurement results and other data.

[0004]

There are various objects to be measured by such a resistivity measuring instrument. However, when measuring these wafers, the material of the tip, the radius of curvature of the tip, the stylus pressure, etc. are adapted to the object of measurement according to the material of the object of measurement such as silicon and metal, and the resistivity. Therefore, the type of 4-probe probe must be changed.

Further, when a certain kind of measuring object is measured, a substance attached to the probe tip becomes a pollution source when measuring a different kind of measuring object, causing a measurement error or degrading the quality of the product. May have an adverse effect. Conventionally, as shown in FIG. 18, since one probe is mounted on one measuring instrument,
In order to avoid the above adverse effects, it was necessary to remove the probe and attach a different type of probe. This replacement work is difficult for ordinary workers, and is usually performed by a technician, and the replacement requires a long time.

The present invention provides a semiconductor wafer resistivity measuring instrument which does not require probe replacement work by an engineer and can reduce the time required for replacement.

[0007]

In order to achieve this object, a semiconductor wafer resistivity measuring device according to the present invention according to claim 1 comprises a disk-shaped measuring stage on which a semiconductor wafer to be measured is mounted, A rotation driving unit that rotates the measurement stage, a plurality of four-probe probes for measuring the resistivity of the semiconductor wafer by contacting the upper surface of the semiconductor wafer mounted on the measurement stage, and the plurality of probe probes. A plurality of probe vertical drive units for moving the probes in the vertical direction independently of each other, and a probe horizontal drive unit for moving the plurality of probe vertical drive units and the plurality of four-probe probes in the radial direction of the measurement stage. An operation unit for inputting control information for specifying the position of the measurement point and one probe to be selected from the plurality of probes, the position of the measurement point and the one to be selected. A display unit that displays the probe, and a control unit that drives the rotation drive unit, the probe horizontal drive unit, and the probe vertical drive unit according to the control information to bring the probe into contact with a specified position on the semiconductor upper surface. A semiconductor wafer resistivity measuring instrument comprising: a measuring unit for measuring a resistivity, wherein one of the plurality of probe vertical driving units selected corresponding to the type of the semiconductor wafer is operated. , Select the appropriate 4 probe,
The probe is configured to measure the resistivity of the semiconductor wafer with the selected probe.

According to a second aspect of the present invention, there is provided a semiconductor wafer resistivity measuring instrument according to the present invention, which is a disk-shaped measuring stage on which a semiconductor wafer to be measured is mounted, a rotary drive unit for rotating the measuring stage, and the measuring stage. A plurality of four-point probes for contacting the upper surface of the semiconductor wafer mounted on the stage to measure the resistivity of the semiconductor wafer, and a plurality of probes for vertically moving the plurality of probes independently of each other. Probe vertical drive unit, a measurement stage drive unit that moves the measurement stage and the rotation drive unit in the radial direction of the measurement stage, the position of the measurement point, and one of the plurality of probes to be selected. An operation unit for inputting control information designating one probe, a display unit for displaying the position of the measurement point and the one probe to be selected, and the rotary drive according to the control information. Unit, a measurement unit driving unit, and a probe vertical driving unit are driven, and a semiconductor wafer resistivity including a control unit that brings the probe into contact with a designated position on the semiconductor upper surface, and a measuring unit that measures a resistivity A measuring instrument, which operates one of the plurality of probe up-and-down drive units selected according to the type of the semiconductor wafer, selects an appropriate four-probe probe, and selects the selected probe. According to the above, the semiconductor wafer is configured to measure the resistivity of the semiconductor wafer.

The semiconductor wafer resistivity measurement according to the present invention having such a structure does not require a probe replacement work by a technician, and thus a probe installation failure due to a mistake of the replacement work and a waste of time required for the replacement work are required. lost,
It is possible to improve the efficiency of measurement work.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a semiconductor wafer resistivity measuring device according to the present invention corresponding to claim 1 is a disk-shaped measuring stage 1 on which a semiconductor wafer 2 to be measured is mounted, and the measurement. A rotation drive unit 8 for rotating the stage 1,
A plurality of four probe probes 4a, 4b for contacting the upper surface of the semiconductor wafer 2 mounted on the measuring stage 1 to measure the resistivity of the semiconductor wafer 2, and a plurality of the probes 4a, A plurality of probe up-and-down drive units 6a and 6b for moving 4b independently in the up-and-down direction, a plurality of probe up-and-down drive units 6a and 6b, and a plurality of 4-probe probes 4a and 4b are attached to the measurement stage 1. A horizontal probe driving unit 7 that moves in the radial direction, an operation unit 3 that inputs control information that specifies the position of a measurement point and one probe to be selected from the plurality of probes 4a and 4b.
A display unit 11 that displays the position of the measurement point and the one probe to be selected, drives the rotation drive unit 8, the probe horizontal drive unit 7, and the probe vertical drive units 6a and 6b according to the control information, Control unit 10 for bringing the probe into contact with a specified position on the upper surface of the semiconductor wafer 2.
And a measuring unit 5 for measuring the resistivity, which is one of the plurality of probe vertical drive units 6a, 6b selected according to the type of the semiconductor wafer 2. 1 is operated to select an appropriate four-probe probe 4a, 4b, and the resistivity of the semiconductor wafer 2 is measured by the selected probe. Although FIG. 1 shows the case where each of the four-probe probe and the probe up-and-down drive unit is two, the basic configuration and operation are the same even when each of them is three or more.

FIG. 2 is a diagram showing an example of the probe vertical drive unit 6. In the present invention, a plurality of 4-probe probes 4 can be attached, and accordingly, a plurality of independent probe vertical drive units 6 are provided. All of these are attached to the probe horizontal drive unit 7. FIG. 2 shows one of the probe vertical drive units 6. The probe vertical drive unit 6 includes a probe mounting bracket 6-1 and
Cam follower 6 mounted on probe mounting bracket 6-1
-2, the linear cam 6-3, and the air cylinder 6-4 which is connected to the linear cam 6-3 and horizontally moves the linear cam 6-3.
And an arm 6-5 (described later with reference to FIGS. 5 and 6). When the linear cam 6-3 driven by the air cylinder 6-4 moves horizontally, the cam follower 6-2 moves up and down, and the probe mounting bracket 6-1 and the 4 probe probe 4 connected to the cam follower 6-2 move. It is controlled up and down. In this example, the linear cam 6-3 is used as means for moving the cam follower 6-2 and the probe mounting bracket 6-1 up and down, but instead of that, for example,
An elliptical cam or a circular eccentric cam can be used, and an electric motor can be used as a means for rotating the elliptical cam or the circular eccentric cam.

FIG. 3 is a plan view of the probe horizontal drive section 7. The operation of the probe horizontal drive unit 7 will be described with reference to FIG. The probe vertical drive unit 7 is attached with the probe vertical drive unit 6 and the 4-probe probe 4 shown in FIG. The probe horizontal drive unit 7 includes an electric motor 7-2, a ball screw 7-3,
Guide rail 7-4, probe vertical drive mounting bracket 7-
It is composed of 1. By driving the electric motor 7-2 and rotating the ball screw 7-3, the probe vertical drive unit mounting bracket 7-1 and the probe vertical drive units 6 and 4 mounted on the probe vertical drive unit mounting bracket 7-1. The probe probe 4 is moved horizontally, left and right in FIG.

FIG. 4 shows a plan view of the rotary drive unit 8. When the electric motor 8-1 rotates, the rotation operation is transmitted to the pulley 8-3 via the belt 8-2, and the disc-shaped measuring stage 1 fixed to the pulley 8-3 is rotated.

FIGS. 5 and 6 show the arrangement of the disc-shaped measuring stage 1, the probe horizontal drive unit 7, the probe vertical drive unit 6 and the 4-probe probe 4. The layout format I shown in FIG.
The arm 6-5 of the probe vertical drive unit 6 extends from the probe vertical drive unit mounting bracket 7-1 in parallel with the drive direction of the probe horizontal drive unit 7 (indicated by arrow A), and the arrangement shown in FIG. II is an arm 6-5 of the probe vertical drive unit 6.
Extends from the probe vertical drive unit mounting bracket 7-1 in a direction perpendicular to the drive direction (indicated by arrow A) of the probe horizontal drive unit 7. The basic operation of the device according to the present invention and the effects of the present invention are not changed by either arrangement method.

A method of positioning the 4-probe probe 4 with respect to the measurement point of the semiconductor wafer 2 arranged on the disk-shaped measuring stage 1 in the apparatus of the present invention will be described with reference to FIGS. To do. FIG. 7A shows a state in which the semiconductor wafer 2 is placed on the disk-shaped measuring stage 1 before positioning. The direction L-L 'in which the probe 4 is moved by the probe horizontal drive unit 7 is taken as the reference direction. Usually, the notch or orientation flat 1 of the semiconductor wafer 2
1 is placed in conformity with the reference direction L-L '. The rotation center of the disk-shaped measuring stage 1 is O, and the position of a desired measurement point is P. Let R be the distance between the rotation center O of the disk-shaped measuring stage 1 and the measurement point P, and θ be the angle formed by the line segment OP and the reference direction LL ′.

FIG. 7B shows a state after the positioning. Positioning of the measurement point is performed by the following two operations. (1) The 4-probe probe 4 is moved by the probe horizontal drive unit 7 to a position separated by R from the rotation center O of the disk-shaped measuring stage 1. (2) The disc-shaped rotary stage 1 is rotated by θ from the reference direction LL ′ by the rotary drive unit 8. Due to these two operations, the 4-probe probe 4 is moved directly above the desired measurement point on the semiconductor wafer 2.

Since the present invention has a plurality of 4-probe probes, each 4-probe probe 4 is driven by the probe horizontal drive unit 7 to rotate the center O of rotation of the disc-shaped measuring stage 1.
When moving to a position further away by R, the moving amount is controlled in consideration of the mounting position of each 4-probe probe 4 on the probe horizontal drive unit 7. Here, the control of the movement amount of each 4-probe probe will be described with reference to FIG.
That is, when the 4-probe probe (I) is selected and used (a), the 4-probe probe (I) 4a is moved by the probe horizontal drive unit 7 to a position separated from the rotation center O of the disk-shaped rotary stage 1 by R. To move. When selecting and using the 4-probe probe (II) (b), the 4-probe probe (II) 4b is moved by the probe horizontal drive unit 7 to a position separated from the rotation center O of the disk-shaped rotary stage 1 by R. . By the above operation, the four-probe probe can be moved to a position directly above a desired point on the semiconductor wafer 2 regardless of which of the plurality of four-probe probes is selected and used.

FIG. 9 is a side view showing an example of the arrangement according to the arrangement form of FIG. The same structural parts as those shown in FIG. 8 are designated by the same corresponding reference numerals.

FIG. 10 shows an example of the configuration for designating the probe to be used among the plurality of probes 4a, 4b .... A probe designation screen is displayed on the display unit 11 connected to the control unit 10, and the probe to be used is designated by inputting the probe number by the operation unit 3 also connected to the control unit 10. In FIG. 10, the No. out of the plurality of probes 4 is shown.
The example in which the probe of 01 is designated is shown. Correspondence between the probe No., the type of wafer to be measured, the material of the probe tip, the radius of curvature of the tip, the stylus pressure, etc. is determined in advance as shown in Table 1.

[0020]

[Table 1]

Further, the deviation of the mounting position of the semiconductor wafer 2 on the measuring stage 1 is corrected by a so-called orientation flat aligner, or the deviation of the measuring position from the reference position is proposed as disclosed in Japanese Patent No. 3149400. Since any correction method such as correction by the correction can be adopted, detailed description of this correction will be omitted.

Another embodiment will be described below. As shown in FIG. 11, the semiconductor wafer resistivity measuring device according to the present invention corresponding to claim 2 is a semiconductor wafer 2 to be measured.
A disk-shaped measuring stage 1 for mounting the
And a plurality of four-probe probes 4a and 4b for contacting the upper surface of the semiconductor wafer 2 mounted on the measuring stage 1 to measure the resistivity of the semiconductor wafer 2 And the plurality of probes 4a, 4b
A plurality of probe up-and-down driving units 12a and 12b for vertically moving the measurement stage, a measurement stage drive unit 13 for moving the measurement stage 1 and the rotation drive unit 8 in the radial direction of the measurement stage, and a measurement point. And the position of the measurement point and the one probe to be selected, and the operation section 3 for inputting control information designating one probe to be selected from the plurality of probes 4a and 4b. Display unit 11, the rotation drive unit 8, the measurement stage drive unit 13, and the probe vertical drive unit 1 according to the control information.
Control unit 10 that drives 2a and 12b to bring the probe into contact with a specified position on the upper surface of the semiconductor wafer 2.
And a measuring unit 5 for measuring the resistivity, which is one of the plurality of probe vertical drive units 12a, 12b selected according to the type of the semiconductor wafer 2. 1 is operated to select an appropriate four-probe probe 4a, 4b, and the resistivity of the semiconductor wafer 2 is measured by the selected probe.

Although FIG. 11 shows the case where each of the four-probe probe and the probe up-and-down drive unit is two, the basic configuration and operation are the same even when each of them is three or more.

FIG. 12 is a diagram showing an example of the probe vertical drive unit 12. In the present invention, a plurality of 4-probe probes 4 can be attached, and accordingly, a plurality of independent probe vertical drive units 12 are provided. 12
Shows one of the probe vertical drive units 12. The probe vertical drive unit 12 is connected to a probe mounting bracket 12-1, a cam follower 12-2 mounted on the probe mounting bracket 12-1, an elliptical cam 12-3, and an elliptical cam 12-3. It is composed of an electric motor 12-4 for rotating the elliptical cam 12-3. By rotating the elliptical cam 12-3 driven by the electric motor 12-4, the cam follower 12-2 moves up and down, and the probe mounting bracket 12-connected to the cam follower 12-2.
The 1 and 4 probe probes 4 are vertically controlled. In this example,
Although the elliptical cam 12-3 is used as a means for moving the cam follower 12-2 and the probe mounting bracket 12-1 up and down, for example, a circular eccentric cam can be used instead, and an air eccentric cam can be used. A combination of cylinders and linear cams can be used.

FIG. 13 is a plan view of the measurement stage drive section. The operation of the measurement stage drive unit 13 will be described with reference to FIG. The rotation drive unit 8 and the measurement stage 1 are attached to the measurement stage drive unit 13 via the measurement stage mounting bracket 13-1. The measurement stage drive unit 13 includes an electric motor 13-2, a ball screw 13-3, and a guide rail 1.
3-4, the measurement stage mounting bracket 13-1. Drives the electric motor 13-2, and the ball screw 13-3
By rotating the measurement stage mounting bracket 13-
1 and the rotation drive unit 8 mounted on the measurement stage mounting bracket 13-1 and the measurement stage 1 horizontally.
At 3, move to the left or right.

The rotary drive unit 8 is the same as that shown in the plan view of FIG. When the electric motor 8-1 rotates, the rotation operation is transmitted to the pulley 8-3 via the belt 8-2, and the disc-shaped measuring stage 1 fixed to the pulley 8-3.
To rotate.

FIG. 14 shows the arrangement of the disc-shaped measuring stage 1, the measuring stage drive unit 13, the probe vertical drive unit 12, the four-probe probe 4, and the rotary drive unit 8.

A method of positioning the 4-probe probe 4 with respect to the measurement point of the semiconductor wafer 2 arranged on the disk-shaped measuring stage 1 in the apparatus of the present invention will be described with reference to FIGS. 15 (a), 15 (b) and 16. To do. FIG. 15A shows a state of “before positioning” in which the semiconductor wafer 2 is placed on the disc-shaped measuring stage 1. A direction LL ′ in which the disc-shaped measuring stage 1 moves by the measuring stage driving unit 13 is set as a reference direction. Usually, the notch or orientation flat 1-1 of the semiconductor wafer 2 is placed so as to coincide with the reference direction LL ′. Set the center of rotation of the disk-shaped measurement stage 1 to O
And the position of the desired measurement point is P. Let R be the distance between the rotation center O of the disk-shaped measuring stage 1 and the measurement point P, and θ be the angle formed by the line segment OA and the reference direction LL ′.

FIG. 15B shows the state "after positioning". Positioning of the measurement point is performed by the following two operations. (1) The rotation center O of the disc-shaped measuring stage 1 is moved by the measuring stage drive unit 13 to a position separated from the four-probe probe 4 by R. (2) The disc-shaped rotary stage 1 is rotated by θ from the reference direction LL ′ by the rotary drive unit 8. Due to these two operations, the desired measurement point on the semiconductor wafer 2 moves directly below the 4-probe probe 4.

Since the present invention has a plurality of 4-probe probes, the rotation center O of the disk-shaped measuring stage 1 is moved by the measuring-stage driving section 13 to the 4-probe probe 4.
When moving to a position further away by R, each 4
It goes without saying that the movement amount is controlled in consideration of the mounting position of the probe probe 4.

Here, the control of the movement amount of the disk-shaped measuring stage 1 will be described with reference to FIG. That is, when the 4-probe probe (I) is selected and used (a), the rotation center O of the disk-shaped measuring stage 1 is moved by the measurement stage drive unit 13 to a position separated by R from the 4-probe probe (I) 4a. To move. When selecting and using the 4-probe probe (II) (b), the rotation center O of the disk-shaped measuring stage 1 is moved by the measuring stage drive unit 13 to a position separated from the 4-probe probe (II) 4b by R. . By the above operation, a desired point on the semiconductor wafer 2 can be moved directly below the 4-probe probe regardless of which of the 4-probe probes is selected and used.

FIG. 17 is a side view showing an example of the arrangement according to the arrangement form of FIG. The same structural parts as those shown in FIGS. 11 to 15 are designated by the same corresponding reference numerals.

[0033]

As can be understood from the above detailed description, FA (factory automation) is currently in progress in each semiconductor manufacturing factory, and measurement conditions for each semiconductor wafer can be directly measured from a host computer without human intervention. In many cases, measuring instruments are given, but in such a case, the selection and replacement of the 4-probe probe can be automatically performed by a command of a host computer without manual labor. Increase to. Further, conventionally, there have been cases where a plurality of measuring instruments are installed for each type of wafer while avoiding the complexity of manual probe replacement. According to the present invention, it is possible to use a single measuring instrument without installing a plurality of measuring instruments, and its economic effect is extremely large.

[Brief description of drawings]

FIG. 1 is a block diagram showing a first configuration system example of a semiconductor wafer resistivity measuring device according to the present invention.

FIG. 2 is a side view showing an outline of the structure of a probe vertical drive unit in the first embodiment of the present invention.

FIG. 3 is a plan view showing an outline of the structure of a probe horizontal drive unit in the first embodiment of the present invention.

FIG. 4 is a plan view showing a structural example of a rotation drive unit in the first and second embodiments of the device of the present invention.

FIG. 5 is a plan view showing an arrangement configuration example of a 4-probe probe, a probe vertical drive unit, a probe horizontal drive unit, and a disk-shaped measuring stage in the first embodiment of the device of the present invention.

FIG. 6 is a plan view showing another arrangement configuration example of the 4-probe probe, the probe vertical drive unit, the probe horizontal drive unit, and the disc-shaped measuring stage in the first embodiment of the device of the present invention.

7A and 7B are schematic plan views (a) and (b) for explaining the states before and after the positioning of the 4-probe probe with respect to the semiconductor wafer arranged on the disk-shaped measuring stage in the first embodiment of the device of the present invention. ).

FIG. 8 is a plane view for explaining the control of the movement amount of the 4-probe probe for positioning the 4-probe probe with respect to the semiconductor wafer arranged on the disk-shaped measuring stage in the first embodiment of the device of the present invention. It is a schematic diagram (a) (b).

9 is a side view showing a configuration example according to the arrangement format of FIG.

FIG. 10 is a block diagram for explaining a probe designating mechanism in the device of the present invention.

FIG. 11 is a block diagram showing a second structural system example of the semiconductor wafer resistivity measuring device according to the present invention.

FIG. 12 is a perspective view showing an outline of the structure of a probe up-and-down drive unit in a second embodiment of the present invention.

FIG. 13 is a plan view showing an outline of the structure of a measurement stage drive section in the second embodiment of the present invention.

FIG. 14 is a plan view showing an arrangement configuration example of a 4-probe probe, a probe vertical drive unit, a measurement stage drive unit, and a disk-shaped measurement stage in a second embodiment of the device of the present invention.

FIG. 15 is a schematic plan view (a) (b) for explaining the states before and after the positioning of the 4-probe probe with respect to the semiconductor wafer arranged on the disk-shaped measuring stage in the second embodiment of the device of the present invention. ).

FIG. 16 is a plane view for explaining the control of the movement amount of the 4-probe probe for positioning the 4-probe probe with respect to the semiconductor wafer arranged on the disk-shaped measuring stage in the second embodiment of the device of the present invention. It is a schematic diagram (a) (b).

17 is a side view showing a configuration example according to the arrangement format of FIG. 14. FIG.

FIG. 18 is a block diagram showing a configuration system of a conventional semiconductor wafer resistivity measuring device.

[Explanation of symbols]

1 measurement stage 2 Semiconductor wafer 3 operation part 4a I system 4 probe probe 4b II system 4 probe probe 5 Measuring section 6a I-system 4-probe probe vertical drive unit 6b II system 4 probe probe vertical drive unit 6-1 Probe mounting bracket 6-2 Cam follower 6-3 Linear cam 6-4 Air cylinder 6-5 arm 7 Probe horizontal drive 7-1 Probe vertical drive mounting bracket 7-2 Electric motor 7-3 Ball screw 7-4 Guide rail 8 rotation drive 8-1 Electric motor 8-2 Belt 8-3 Pulley 9 power supply 10 Control unit 11 Display 12 Probe vertical drive 12-1 Probe mounting bracket 12-2 Cam follower 12-3 Elliptical cam 12-4 Electric motor 13 Measurement stage drive 13-1 Measurement stage mounting bracket 13-2 Electric motor 13-3 Ball screw 13-4 Guide rail

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Haruki Hikita, Inventor             2-6-13 Shinmeidai, Hamura-shi, Tokyo Kokusai Electric             Inside Alpha Co. (72) Inventor Toshiaki Tanaka             2-6-13 Shinmeidai, Hamura-shi, Tokyo Kokusai Electric             Inside Alpha Co. (72) Inventor Kazuhiko Kinoshita             2-6-13 Shinmeidai, Hamura-shi, Tokyo Kokusai Electric             Inside Alpha Co. F term (reference) 2G028 AA02 BB11 HN11                 4M106 AA01 AA10 BA20 CA10 DJ04                       DJ05

Claims (2)

[Claims] 1. A disk-shaped measuring stage on which a semiconductor wafer to be measured is mounted, a rotary drive unit for rotating the measuring stage, and the semiconductor by contacting an upper surface of the semiconductor wafer mounted on the measuring stage. A plurality of four-probe probes for measuring the resistivity of the wafer, a plurality of probe up-and-down drive units for moving the plurality of probes up and down independently of each other, and a plurality of probe up-and-down drive units. A probe horizontal drive unit for moving a plurality of four-probe probes in the radial direction of the measurement stage, a position of a measurement point, and control information for designating one probe to be selected from the plurality of probes. An operation unit for inputting the position, a display unit for displaying the position of the measurement point and the one probe to be selected, the rotation drive unit, the probe horizontal drive unit and the front unit according to the control information. A control unit for driving the probe vertical drive unit to bring the probe into contact with a specified position on the upper surface of the semiconductor wafer; and a measurement unit connected to the plurality of four-probe probes for measuring resistivity. A semiconductor wafer resistivity measuring instrument comprising: a plurality of probe vertical drive units selected corresponding to the type of the semiconductor wafer to operate to select an appropriate four-probe probe. And a semiconductor wafer resistivity measuring device configured to measure the resistivity of the semiconductor wafer with the selected probe. 2. A disk-shaped measuring stage on which a semiconductor wafer to be measured is mounted, a rotation driving unit for rotating the measuring stage, and the semiconductor by contacting an upper surface of the semiconductor wafer mounted on the measuring stage. A plurality of four-probe probes for measuring the resistivity of the wafer; a plurality of probe up-and-down drive units for moving the plurality of probes up and down independently of each other; a measurement stage and a rotation drive unit; A measurement stage drive unit for moving the measurement stage in a radial direction of the measurement stage, an operation unit for inputting control information for specifying the position of the measurement point and one probe to be selected from the plurality of probes, A display unit that displays the position of the measurement point and the one probe to be selected, and the rotation drive unit, the measurement stage drive unit, and the probe vertical drive unit according to the control information. A semiconductor wafer including a control unit that moves and contacts the probe with a specified position on the upper surface of the semiconductor wafer, and a measurement unit that is connected to the plurality of four-probe probes to measure resistivity. A resistivity measuring instrument, wherein one of the plurality of probe up-and-down drive units selected according to the type of the semiconductor wafer is operated to select an appropriate four-probe probe, and the selected probe is selected. And a probe for measuring the resistivity of the semiconductor wafer.