JP2003163191A - Polishing pad for mechanochemical polishing device - Google Patents
Polishing pad for mechanochemical polishing deviceInfo
- Publication number
- JP2003163191A JP2003163191A JP2001362568A JP2001362568A JP2003163191A JP 2003163191 A JP2003163191 A JP 2003163191A JP 2001362568 A JP2001362568 A JP 2001362568A JP 2001362568 A JP2001362568 A JP 2001362568A JP 2003163191 A JP2003163191 A JP 2003163191A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing pad
- layer
- adhesive sheet
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は化学的機械研磨法
（ＣＭＰ：Chemical Mechanical Polishing ）によって
ウェーハ等を研磨するウェーハ研磨装置に使用される研
磨パッドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing pad used in a wafer polishing apparatus for polishing a wafer or the like by a chemical mechanical polishing (CMP) method.
【０００２】[0002]
【従来の技術】ＣＭＰによるウェーハの研磨は、回転す
る研磨パッドにウェーハを回転させながら所定の圧力で
押し付け、その研磨パッドとウェーハとの間にメカノケ
ミカル研磨剤（スラリー）を供給することにより行われ
る。このＣＭＰの主な目的は、ウェーハ上のＩＣ回路の
表面に形成される段差を除去し、ＩＣ回路の高密度化の
達成を容易にすることと、不要な膜厚の層を除去するこ
とである。2. Description of the Related Art Wafer polishing by CMP is performed by pressing a rotating polishing pad at a predetermined pressure while rotating the wafer and supplying a mechanochemical polishing agent (slurry) between the polishing pad and the wafer. Be seen. The main purpose of this CMP is to remove the step formed on the surface of the IC circuit on the wafer, to facilitate achievement of high density of the IC circuit, and to remove the layer of unnecessary film thickness. is there.
【０００３】この際、ＩＣ回路を形成する各層の膜厚は
非常に小さく、前記段差が除去された後にも、僅かの膜
厚を残していたりすることもある。したがって、不要な
膜を除去した時点でＣＭＰを停止させるＣＭＰの終点の
検出は非常に重要である。特に、装置稼働率の向上、生
産性の向上等の観点より、ＣＭＰ処理中での（ｉｎ−ｓ
ｉｔｕ）終点の検出がなされることが多く、そのための
各種手段が提案されている（たとえば、特開平１０−８
３９７７号）。At this time, the film thickness of each layer forming the IC circuit is very small, and even after the step is removed, a slight film thickness may remain. Therefore, it is very important to detect the end point of CMP that stops CMP when the unnecessary film is removed. In particular, from the viewpoint of improving the equipment operating rate and productivity, (in-s
Itu) The end point is often detected, and various means therefor have been proposed (for example, JP-A-10-8).
3977).
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ＣＭＰ処理中での終点検出の各種手段では、研磨パッド
に複雑な加工を施すものが多く（たとえば、特開平１０
−８３９７７号に示される石英インサート）、また、使
い勝手も悪い。However, in the various means for detecting the end point during the CMP process described above, many polishing pads are subjected to complicated processing (for example, Japanese Patent Laid-Open No. Hei 10).
Quartz insert shown in No. 83977), and is also inconvenient to use.
【０００５】一方、終点検出の各種手段を単純な構成と
した場合（たとえば、研磨パッドの裏打ち層を除去する
構成）、スラリーが研磨パッドを透過して漏れ、装置を
汚染する等の不具合を生じやすい。On the other hand, when the various means for detecting the end point has a simple structure (for example, a structure in which the backing layer of the polishing pad is removed), the slurry penetrates through the polishing pad and leaks, resulting in a problem such as contaminating the apparatus. Cheap.
【０００６】本発明は、このような事情に鑑みてなされ
たもので、ＣＭＰ処理中での終点検出が容易に行え、か
つ、単純な構成の機械化学的研磨装置用の研磨パッドを
提供することを目的とする。The present invention has been made in view of the above circumstances, and provides a polishing pad for a mechanochemical polishing apparatus which can easily detect an end point during CMP processing and has a simple structure. With the goal.
【０００７】[0007]
【課題を解決するための手段】本発明は前記目的を達成
するために、研磨用部材層と研磨用部材より軟質な部材
よりなる裏打ち層とが接着シートにより貼り合わされて
なる機械化学的研磨装置用の研磨パッドであって、該研
磨パッドの一部には透光性の窓部が設けられており、該
窓部においては、前記接着シートを残し、前記研磨用部
材層と裏打ち層とが除去されていることを特徴とする研
磨パッドを提供する。In order to achieve the above object, the present invention is a mechanical-chemical polishing apparatus in which a polishing member layer and a backing layer made of a member softer than the polishing member are bonded by an adhesive sheet. A polishing pad for use in a part of the polishing pad, wherein a transparent window portion is provided, and in the window portion, the adhesive sheet is left and the polishing member layer and the backing layer are A polishing pad characterized by being removed.
【０００８】本発明によれば、研磨パッドから研磨用部
材層と裏打ち層を除去するのみで窓部を形成することが
できる。また、接着シートが存在することにより、スラ
リーが研磨パッドを透過して漏れることが防げる。According to the present invention, the window can be formed only by removing the polishing member layer and the backing layer from the polishing pad. In addition, the presence of the adhesive sheet prevents the slurry from passing through the polishing pad and leaking.
【０００９】また、本発明は、研磨用部材層と研磨用部
材より軟質な部材よりなる裏打ち層とが接着シートによ
り貼り合わされてなる機械化学的研磨装置用の研磨パッ
ドであって、該研磨パッドの一部には透光性の窓部が設
けられており、該窓部においては、前記裏打ち層が除去
されおり、かつ、前記研磨用部材層が透光性の部材で置
き換えられていることを特徴とする研磨パッドを提供す
る。Further, the present invention is a polishing pad for a mechanical chemical polishing apparatus, comprising a polishing member layer and a backing layer made of a member softer than the polishing member, which are bonded together by an adhesive sheet. Has a translucent window part, in which the backing layer is removed and the polishing member layer is replaced with a translucent member. A polishing pad characterized by the above is provided.
【００１０】本発明によれば、研磨パッドから研磨用部
材層と裏打ち層を除去すること等により窓部を形成する
ことができる。また、接着シートが存在することによ
り、スラリーが研磨パッドを透過して漏れることが防げ
る。更に、研磨用部材層が透光性の部材で置き換えられ
ていることにより、研磨用部材層が除去された箇所にス
ラリーが溜り、該スラリーにより窓部の透過光量が減少
することを防げる。According to the present invention, the window can be formed by removing the polishing member layer and the backing layer from the polishing pad. In addition, the presence of the adhesive sheet prevents the slurry from passing through the polishing pad and leaking. Further, since the polishing member layer is replaced with a light-transmissive member, it is possible to prevent the slurry from accumulating in the portion where the polishing member layer has been removed and reducing the amount of light transmitted through the window due to the slurry.
【００１１】また、本発明は、研磨用部材層の裏面に接
着シートが貼り付けられてなる機械化学的研磨装置用の
研磨パッドであって、該研磨パッドの一部には透光性の
窓部が設けられており、該窓部においては、前記接着シ
ートを残し、前記研磨用部材層が除去されていることを
特徴とする研磨パッドを提供する。Further, the present invention is a polishing pad for a mechanical-chemical polishing device, which comprises an adhesive sheet attached to the back surface of a polishing member layer, and a transparent window is provided in a part of the polishing pad. A polishing pad is provided, in which a portion is provided, and the adhesive sheet is left in the window portion, and the polishing member layer is removed.
【００１２】また、本発明は、研磨用部材層の裏面に接
着シートが貼り付けられてなる機械化学的研磨装置用の
研磨パッドであって、該研磨パッドの一部には透光性の
窓部が設けられており、該窓部においては、前記研磨用
部材層が透光性の部材で置き換えられていることを特徴
とする研磨パッドを提供する。Further, the present invention is a polishing pad for a mechanochemical polishing apparatus, comprising an adhesive sheet attached to the back surface of a polishing member layer, wherein a part of the polishing pad has a translucent window. A polishing pad, wherein the polishing member layer is replaced with a light-transmissive member in the window portion.
【００１３】上記の２種の発明のように、裏打ち層を有
しない研磨パッドであっても、窓部を形成することによ
り、前記の裏打ち層を有する研磨パッドの効果と略同様
の効果が得られる。Even if the polishing pad does not have a backing layer as in the above-mentioned two types of inventions, by forming the window portion, the same effect as that of the polishing pad having the backing layer can be obtained. To be
【００１４】[0014]
【発明の実施の形態】以下、添付図面に従って本発明に
係る機械化学的研磨装置用の研磨パッドの好ましい実施
の形態について詳説する。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a polishing pad for a mechanochemical polishing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings.
【００１５】図１は、機械化学的研磨装置用の研磨パッ
ド２０の部分拡大断面図である。同図に示すように研磨
パッド２０は、研磨用部材層２２と裏打ち層２４とが接
着シート２６により貼り合わされて構成されている。研
磨パッド２０の一部には窓部２８が設けられており、そ
して、窓部２８において、裏打ち層２４が除去されてい
る。更に、窓部２８において、窓材３０にあたる研磨用
部材層２２が他の材質の研磨パッドで置き換えられてい
る。FIG. 1 is a partially enlarged sectional view of a polishing pad 20 for a mechanochemical polishing apparatus. As shown in the figure, the polishing pad 20 is configured by laminating a polishing member layer 22 and a backing layer 24 with an adhesive sheet 26. A window 28 is provided in a part of the polishing pad 20, and the backing layer 24 is removed in the window 28. Further, in the window portion 28, the polishing member layer 22 corresponding to the window material 30 is replaced with a polishing pad made of another material.
【００１６】接着シート２６は、ポリエチレンテレフタ
レート製シートの両面に粘着層が形成されることにより
構成されている。窓部２８において、ポリエチレンテレ
フタレート製シート下面の粘着層は除去されず、残留し
た状態にある。The adhesive sheet 26 is formed by forming an adhesive layer on both sides of a polyethylene terephthalate sheet. In the window portion 28, the adhesive layer on the lower surface of the polyethylene terephthalate sheet is not removed and remains.
【００１７】研磨パッド２０のうち、研磨用部材層２２
は研磨面を構成し、スラリーと協働してウェーハ上のＩ
Ｃ回路の表面に形成される段差を除去する。研磨用部材
層２２としては、通常、連続気泡タイプの発泡ポリウレ
タン樹脂が使用される。The polishing member layer 22 of the polishing pad 20
Constitutes the polishing surface, and in cooperation with the slurry, the I on the wafer
The step formed on the surface of the C circuit is removed. As the polishing member layer 22, an open-cell type polyurethane foam resin is usually used.
【００１８】窓部２８は、研磨パッド２０の少なくとも
１箇所に設けられる。そして、窓部２８の下面より、後
述する方法によりＣＭＰ処理中での終点検出がなされ
る。また、図示の構成では、窓材３０にあたる研磨用部
材層２２が他の材質の研磨パッドで置き換えられてい
る。この理由は、研磨用部材層２２に近い研磨性能を有
し、かつ、研磨用部材層２２より光線透過率の高い研磨
パッドを窓材３０として使用すれば、ＣＭＰ処理中での
終点検出がより確実に行えるからである。The window portion 28 is provided at at least one location on the polishing pad 20. Then, from the lower surface of the window 28, the end point is detected during the CMP process by the method described later. Further, in the illustrated configuration, the polishing member layer 22 corresponding to the window material 30 is replaced with a polishing pad made of another material. The reason for this is that if a polishing pad having a polishing performance close to that of the polishing member layer 22 and having a higher light transmittance than the polishing member layer 22 is used as the window material 30, the end point detection during CMP processing can be further improved. This is because it can be done reliably.
【００１９】ただし、研磨用部材層２２がＣＭＰ処理中
での終点検出ができる程度の光線透過率の材質、厚さで
あれば、必ずしも研磨用部材層２２が他の材質の研磨パ
ッドで置き換えられる必要はない。この場合には、研磨
パッド２０を、図１の構成より単純な構成とすることが
できる。また、当然ながら、研磨用部材層２２が透光性
の部材であれば窓部２８を設ける必要はない。However, as long as the polishing member layer 22 is made of a material and has such a light transmittance that the end point can be detected during the CMP process, the polishing member layer 22 is necessarily replaced with a polishing pad made of another material. No need. In this case, the polishing pad 20 can be made simpler than the structure shown in FIG. Further, as a matter of course, if the polishing member layer 22 is a translucent member, it is not necessary to provide the window 28.
【００２０】図１の構成では、接着シート２６として
は、ポリエチレンテレフタレート製シートが使用されて
いるが、これに限られるものではなく、各種材質のシー
ト材が使用できる。たとえば、ポリエチレン、ポリプロ
ピレン、ベスペル（商品名）等が使用できる。In the configuration of FIG. 1, a polyethylene terephthalate sheet is used as the adhesive sheet 26, but the adhesive sheet 26 is not limited to this, and various sheet materials can be used. For example, polyethylene, polypropylene, Vespel (trade name) and the like can be used.
【００２１】このような接着シート２６を使用すること
により、ＣＭＰ処理中に研磨用部材層２２に浸透したス
ラリーが研磨用部材層２２の下方に漏洩し、後述する終
点検出手段で使用されるレーザー干渉計３２等を汚染さ
せることが防止できる。By using such an adhesive sheet 26, the slurry that has penetrated into the polishing member layer 22 during the CMP process leaks below the polishing member layer 22 and is used in a laser used in the end point detecting means described later. It is possible to prevent the interferometer 32 and the like from being contaminated.
【００２２】窓部２８において、ポリエチレンテレフタ
レート製シート下面の粘着層は除去されず、残留した状
態にある。シート下面の粘着層があっても、光線透過率
の減少は僅かであり、ＣＭＰ処理中での終点検出は行え
るからである。ただし、シート下面の粘着層の除去が容
易に行えるのであれば、除去することが望ましい。In the window portion 28, the adhesive layer on the lower surface of the polyethylene terephthalate sheet is not removed and remains. This is because even if there is an adhesive layer on the lower surface of the sheet, the decrease in light transmittance is slight and the end point can be detected during CMP processing. However, if the adhesive layer on the lower surface of the sheet can be easily removed, it is desirable to remove it.
【００２３】次に、本発明に係る機械化学的研磨装置用
の研磨パッド２０の使用方法、及び、ＣＭＰ処理中での
終点検出の原理等について説明する。Next, a method of using the polishing pad 20 for the mechanochemical polishing apparatus according to the present invention and a principle of detecting an end point during the CMP process will be described.
【００２４】図２は、機械化学的研磨装置１０の全体構
成を示す斜視図である。同図に示すように機械化学的研
磨装置１０は、主として研磨定盤１２と保持ヘッド（ウ
ェーハＷを保持するヘッド）１４とで構成されている。FIG. 2 is a perspective view showing the overall structure of the mechanical chemical polishing apparatus 10. As shown in the figure, the mechanochemical polishing apparatus 10 mainly includes a polishing platen 12 and a holding head (head for holding the wafer W) 14.
【００２５】研磨定盤１２は円盤状に形成され、その下
面中央には回転軸１６が連結されている。研磨定盤１２
は、この回転軸１６に連結されたモータ１８を駆動する
ことにより回転する。また、この研磨定盤１２の上面に
は研磨パッド２０が貼り付けられており、この研磨パッ
ド２０上に図示しないノズルからメカノケミカル研磨剤
（スラリー）が供給される。The polishing platen 12 is formed in a disk shape, and a rotating shaft 16 is connected to the center of the lower surface thereof. Polishing surface plate 12
Rotates by driving a motor 18 connected to the rotating shaft 16. A polishing pad 20 is attached to the upper surface of the polishing platen 12, and a mechanochemical polishing agent (slurry) is supplied onto the polishing pad 20 from a nozzle (not shown).
【００２６】前記のごとく構成された機械化学的研磨装
置１０のウェーハ研磨方法は次のとおりである。The wafer polishing method of the mechanochemical polishing apparatus 10 constructed as described above is as follows.
【００２７】まず、ウェーハＷをウェーハ保持ヘッド１
４で保持して研磨パッド２０上に載置する。次に、研磨
定盤１２を図２Ａ方向に回転させるとともに、ウェーハ
保持ヘッド１４を図２Ｂ方向に回転させる。そして、そ
の回転する研磨パッド２０上に図示しないノズルからス
ラリーを供給する。これにより、ウェーハＷの下面が研
磨パッド２０により研磨される。First, the wafer W is attached to the wafer holding head 1
4 and hold it on the polishing pad 20. Next, the polishing platen 12 is rotated in the direction of FIG. 2A, and the wafer holding head 14 is rotated in the direction of FIG. 2B. Then, the slurry is supplied onto the rotating polishing pad 20 from a nozzle (not shown). As a result, the lower surface of the wafer W is polished by the polishing pad 20.
【００２８】図３は、ＣＭＰ処理中での終点検出手段の
構成を示す概念図である。機械化学的研磨装置１０にお
いて、研磨定盤１２には貫通孔が設けられており、該貫
通孔の位置に窓部２８が位置するように研磨パッド２０
が研磨定盤１２に貼り付けられている。FIG. 3 is a conceptual diagram showing the structure of the end point detecting means during the CMP process. In the mechanical-chemical polishing device 10, the polishing platen 12 is provided with a through hole, and the polishing pad 20 is positioned so that the window portion 28 is located at the position of the through hole.
Is attached to the polishing platen 12.
【００２９】研磨定盤１２の下方の所定の位置にはレー
ザー干渉計３２が配設されている。そして、レーザー干
渉計３２からのレーザービーム３４が窓部２８に照射さ
れ、窓部２８を経て反射されるレーザービームがレーザ
ー干渉計３２に戻るように配される。ただし、研磨定盤
１２は回転するので、窓部２８が研磨定盤１２の回転に
よりレーザー干渉計３２の直上に来たときのみ、測定が
なされる。A laser interferometer 32 is arranged at a predetermined position below the polishing platen 12. Then, the laser beam 34 from the laser interferometer 32 is applied to the window portion 28, and the laser beam reflected through the window portion 28 is arranged to return to the laser interferometer 32. However, since the polishing platen 12 rotates, the measurement is performed only when the window 28 comes directly above the laser interferometer 32 due to the rotation of the polishing platen 12.
【００３０】研磨パッド２０の研磨用部材層２２に使用
される部材が光を透過させない材質である場合には、ポ
リウレタン樹脂等のレーザービーム３４を実質的に透過
させることが解っている部材を窓材３０として使用すれ
ばよい。When the member used for the polishing member layer 22 of the polishing pad 20 is made of a material that does not transmit light, it is known that a member such as polyurethane resin which is substantially transparent to the laser beam 34 is used as a window. It may be used as the material 30.
【００３１】したがって、窓部２８を経て反射されるレ
ーザービームが検出され、これによりＣＭＰ処理中での
ウェーハ上の段差量が演算されることにより、ＣＭＰ処
理中での（ｉｎ−ｓｉｔｕ）終点の検出がなされる。レ
ーザー干渉計３２等による終点の検出は公知の手段（た
とえば、特開平１０−８３９７７号）によればよい。Therefore, the laser beam reflected through the window portion 28 is detected, and the step amount on the wafer during the CMP process is calculated thereby, so that the (in-situ) end point during the CMP process is calculated. Detection is done. The detection of the end point by the laser interferometer 32 or the like may be performed by known means (for example, Japanese Patent Laid-Open No. 10-83977).
【００３２】以上に説明した構成は、本発明の実施例で
あるが、本発明の構成はこれらに限定されるものではな
く、各種の構成が採り得る。The configuration described above is an embodiment of the present invention, but the configuration of the present invention is not limited to these, and various configurations can be adopted.
【００３３】[0033]
【発明の効果】以上説明したように、本発明によれば、
ＣＭＰ処理中での（ｉｎ−ｓｉｔｕ）終点の検出手段に
おいて、研磨パッドから裏打ち層を除去する等により窓
部を形成することができる。また、接着シートが存在す
ることにより、スラリーが研磨パッドを透過して漏れる
ことが防げる。As described above, according to the present invention,
The window can be formed by removing the backing layer from the polishing pad or the like in the in-situ end point detecting means during the CMP process. In addition, the presence of the adhesive sheet prevents the slurry from passing through the polishing pad and leaking.
【図１】機械化学的研磨装置用の研磨パッドの部分拡大
断面図FIG. 1 is a partially enlarged sectional view of a polishing pad for a mechanochemical polishing apparatus.
【図２】機械化学的研磨装置の全体構造を示す斜視図FIG. 2 is a perspective view showing the overall structure of a mechanochemical polishing apparatus.
【図３】ＣＭＰ処理中での終点検出手段の構成を示す概
念図FIG. 3 is a conceptual diagram showing a configuration of an end point detecting means during CMP processing.
１０…機械化学的研磨装置、２０…研磨パッド、２２…
研磨用部材層、２４…裏打ち層、２６…接着シート、２
８…窓部、３０…窓材、Ｗ…ウェーハ10 ... mechanical polishing device, 20 ... polishing pad, 22 ...
Polishing member layer, 24 ... Backing layer, 26 ... Adhesive sheet, 2
8 ... Window part, 30 ... Window material, W ... Wafer
Claims (5)
材よりなる裏打ち層とが接着シートにより貼り合わされ
てなる機械化学的研磨装置用の研磨パッドであって、 該研磨パッドの一部には透光性の窓部が設けられてお
り、 該窓部においては、前記接着シートを残し、前記研磨用
部材層と裏打ち層とが除去されていることを特徴とする
研磨パッド。1. A polishing pad for a mechanochemical polishing apparatus, comprising a polishing member layer and a backing layer made of a member softer than the polishing member, which are bonded to each other with an adhesive sheet. Is provided with a translucent window portion, and in the window portion, the adhesive sheet is left, and the polishing member layer and the backing layer are removed.
材よりなる裏打ち層とが接着シートにより貼り合わされ
てなる機械化学的研磨装置用の研磨パッドであって、 該研磨パッドの一部には透光性の窓部が設けられてお
り、 該窓部においては、前記裏打ち層が除去されおり、か
つ、前記研磨用部材層が透光性の部材で置き換えられて
いることを特徴とする研磨パッド。2. A polishing pad for a mechanical-chemical polishing apparatus, comprising a polishing member layer and a backing layer made of a member softer than the polishing member, which are bonded together by an adhesive sheet, the polishing pad being a part of the polishing pad. Is provided with a translucent window portion, and in the window portion, the backing layer is removed, and the polishing member layer is replaced with a translucent member. Polishing pad.
付けられてなる機械化学的研磨装置用の研磨パッドであ
って、 該研磨パッドの一部には透光性の窓部が設けられてお
り、 該窓部においては、前記接着シートを残し、前記研磨用
部材層が除去されていることを特徴とする研磨パッド。3. A polishing pad for a mechanochemical polishing device, comprising an adhesive sheet attached to the back surface of the polishing member layer, wherein a part of the polishing pad is provided with a translucent window. A polishing pad, wherein the adhesive sheet is left in the window portion and the polishing member layer is removed.
付けられてなる機械化学的研磨装置用の研磨パッドであ
って、 該研磨パッドの一部には透光性の窓部が設けられてお
り、 該窓部においては、前記研磨用部材層が透光性の部材で
置き換えられていることを特徴とする研磨パッド。4. A polishing pad for a mechanochemical polishing apparatus, comprising an adhesive sheet attached to the back surface of a polishing member layer, wherein a part of the polishing pad is provided with a light-transmitting window. In the window portion, the polishing member layer is replaced with a translucent member, and the polishing pad.
タレート製シートの両面に粘着層が形成されている請求
項１〜４のいずれかに記載の研磨パッド。5. The polishing pad according to claim 1, wherein the adhesive sheet has an adhesive layer formed on both surfaces of a polyethylene terephthalate sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001362568A JP2003163191A (en) | 2001-11-28 | 2001-11-28 | Polishing pad for mechanochemical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001362568A JP2003163191A (en) | 2001-11-28 | 2001-11-28 | Polishing pad for mechanochemical polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003163191A true JP2003163191A (en) | 2003-06-06 |
Family
ID=19173052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001362568A Pending JP2003163191A (en) | 2001-11-28 | 2001-11-28 | Polishing pad for mechanochemical polishing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003163191A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005347532A (en) * | 2004-06-03 | 2005-12-15 | Tokyo Seimitsu Co Ltd | Equipment and method for chemical mechanical polishing |
| JP2006005358A (en) * | 2004-06-16 | 2006-01-05 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Polishing pad having pressure-relief channel |
| JP2006527664A (en) * | 2003-06-17 | 2006-12-07 | キャボット マイクロエレクトロニクス コーポレイション | Ultrasonic welding process for manufacturing polishing pads having light transmissive regions |
| JP2008528309A (en) * | 2005-01-26 | 2008-07-31 | アプライド マテリアルズ インコーポレイテッド | Multilayer polishing pad for low pressure polishing |
| WO2008137033A1 (en) * | 2007-05-03 | 2008-11-13 | Cabot Microelectronics Corporation | Stacked polishing pad for high temperature applications |
| JP2010528885A (en) * | 2007-06-08 | 2010-08-26 | アプライド マテリアルズ インコーポレイテッド | Thin polishing pad with window and molding process |
| JP2011228358A (en) * | 2010-04-15 | 2011-11-10 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| WO2011142975A2 (en) * | 2010-05-12 | 2011-11-17 | Applied Materials, Inc. | Pad window insert |
| US10213894B2 (en) | 2016-02-26 | 2019-02-26 | Applied Materials, Inc. | Method of placing window in thin polishing pad |
-
2001
- 2001-11-28 JP JP2001362568A patent/JP2003163191A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006527664A (en) * | 2003-06-17 | 2006-12-07 | キャボット マイクロエレクトロニクス コーポレイション | Ultrasonic welding process for manufacturing polishing pads having light transmissive regions |
| JP2005347532A (en) * | 2004-06-03 | 2005-12-15 | Tokyo Seimitsu Co Ltd | Equipment and method for chemical mechanical polishing |
| JP2006005358A (en) * | 2004-06-16 | 2006-01-05 | Rohm & Haas Electronic Materials Cmp Holdings Inc | Polishing pad having pressure-relief channel |
| JP2008528309A (en) * | 2005-01-26 | 2008-07-31 | アプライド マテリアルズ インコーポレイテッド | Multilayer polishing pad for low pressure polishing |
| WO2008137033A1 (en) * | 2007-05-03 | 2008-11-13 | Cabot Microelectronics Corporation | Stacked polishing pad for high temperature applications |
| US8562389B2 (en) | 2007-06-08 | 2013-10-22 | Applied Materials, Inc. | Thin polishing pad with window and molding process |
| JP2010528885A (en) * | 2007-06-08 | 2010-08-26 | アプライド マテリアルズ インコーポレイテッド | Thin polishing pad with window and molding process |
| US9138858B2 (en) | 2007-06-08 | 2015-09-22 | Applied Materials, Inc. | Thin polishing pad with window and molding process |
| JP2011228358A (en) * | 2010-04-15 | 2011-11-10 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| US9126304B2 (en) | 2010-04-15 | 2015-09-08 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| WO2011142975A2 (en) * | 2010-05-12 | 2011-11-17 | Applied Materials, Inc. | Pad window insert |
| WO2011142975A3 (en) * | 2010-05-12 | 2012-03-01 | Applied Materials, Inc. | Pad window insert |
| US10213894B2 (en) | 2016-02-26 | 2019-02-26 | Applied Materials, Inc. | Method of placing window in thin polishing pad |
| US11161218B2 (en) | 2016-02-26 | 2021-11-02 | Applied Materials, Inc. | Window in thin polishing pad |
| US11826875B2 (en) | 2016-02-26 | 2023-11-28 | Applied Materials, Inc. | Window in thin polishing pad |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5001619B2 (en) | Polishing pad for chemical mechanical polishing equipment with transparent window with less window leakage | |
| US7163437B1 (en) | System with sealed polishing pad | |
| JP5277163B2 (en) | Polishing pad with window having multiple parts | |
| US11826875B2 (en) | Window in thin polishing pad | |
| US20070284764A1 (en) | Sensing mechanism for crystal orientation indication mark of semiconductor wafer | |
| WO2001023141A9 (en) | Polishing pad | |
| JP2012039140A (en) | Polishing table of chemical and mechanical polishing equipment, method for monitoring chemical and mechanical polishing process using the same, method for detecting terminal point using the same, and manufacturing method thereof | |
| JP2003163191A (en) | Polishing pad for mechanochemical polishing device | |
| TW200301722A (en) | Method of fabricating a polishing pad having an optical window | |
| JP2005019669A (en) | Polishing pad, polishing device and method for polishing wafer | |
| JP3843933B2 (en) | Polishing pad, polishing apparatus and polishing method | |
| JP2003188124A (en) | Polishing cloth | |
| US6014218A (en) | Device and method for end-point monitoring used in the polishing of components, in particular semiconductor components | |
| JP2004319584A (en) | Polishing pad and its manufacturing method | |
| JP3017973B2 (en) | Adapter for holding wafer in holder of chemical mechanical polishing machine | |
| JPH1034522A (en) | Polishing device for cmp and cmp device system | |
| KR100406730B1 (en) | Polishing pad of chemical mechanical polisher | |
| JP6794464B2 (en) | Window in a thin polishing pad | |
| WO2019088011A1 (en) | Method for processing wafer | |
| JP2003300151A (en) | Grinding pad, grinding device, and grinding method | |
| JP2003273046A (en) | Polishing device, polishing tape and polishing method | |
| JP2004342640A (en) | Polishing pad | |
| JP3821944B2 (en) | Wafer single wafer polishing method and apparatus | |
| JP3798590B2 (en) | Semiconductor device manufacturing method and grinding apparatus | |
| JPH11320387A (en) | Sticking method for polishing pad |