JP2003157792A - Focused ion beam processing device - Google Patents
Focused ion beam processing deviceInfo
- Publication number
- JP2003157792A JP2003157792A JP2001353951A JP2001353951A JP2003157792A JP 2003157792 A JP2003157792 A JP 2003157792A JP 2001353951 A JP2001353951 A JP 2001353951A JP 2001353951 A JP2001353951 A JP 2001353951A JP 2003157792 A JP2003157792 A JP 2003157792A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample
- irradiation system
- beam irradiation
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、イオンビーム加工
装置に係り、特に半導体ないしは絶縁物試料をイオンビ
ームで加工した際の加工面を、新たな表面処理を施さず
に精度良くかつ試料にダメージを与えることなく観察可
能なイオンビーム加工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus, and in particular, a processed surface of a semiconductor or insulator sample processed by an ion beam is accurately and without damaging the sample without any new surface treatment. The present invention relates to an ion beam processing apparatus that can be observed without giving a beam.
【０００２】[0002]
【従来の技術】従来の装置では、半導体ないし絶縁物試
料をイオンビームにより加工する場合は予め試料表面に
帯電防止用の金属コーティングを施し、加工断面を観察
する際も新たに断面部に金属コーティングを施さないと
帯電が発生し良好な観察が行えなかった。2. Description of the Related Art In a conventional apparatus, when a semiconductor or insulator sample is processed by an ion beam, a metal coating for antistatic is applied to the surface of the sample in advance, and a new metal coating is applied to the section even when observing the processed section. If it was not applied, electrification occurred and good observation could not be performed.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術は、イオ
ンビームによる加工を行った試料に金属コーティングを
施すためにいったん試料室から取出す必要があった。そ
のため、所望の断面が加工できているかどうか確認する
のに手間がかかるという問題があった。また、加工した
位置が観察可能位置に来るようステージを動かして検索
し直す手間も生じた。In the above-mentioned prior art, it was necessary to remove the sample processed by the ion beam from the sample chamber in order to apply the metal coating. Therefore, there is a problem that it takes time to confirm whether or not a desired cross section can be processed. In addition, it took time and effort to move the stage so that the processed position came to the observable position and search again.
【０００４】本発明は、試料室を低真空雰囲気にしてSE
Mで観察することを目的としており、さらに試料表面に
ダメージを与えることなく観察可能な集束イオンビーム
加工装置を提供することを目的とする。According to the present invention, the sample chamber is made to have a low vacuum atmosphere.
The objective is to observe with M, and further to provide a focused ion beam processing apparatus that can be observed without damaging the sample surface.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、イオン源室を高真空に保つための遮断バルブを設け
たイオンビーム照射系と軸方向を異にした電子ビーム照
射系を低真空雰囲気に設定可能な同一試料室に設け、前
記遮断バルブを閉じて試料室内を低真空雰囲気にしてSE
M(Scanning Electron Microscope)で観察することに
より達成される。To achieve the above object, an ion beam irradiation system provided with a shut-off valve for keeping the ion source chamber at a high vacuum and an electron beam irradiation system having an axial direction different from that of a low vacuum are used. It is provided in the same sample chamber where the atmosphere can be set, and the shutoff valve is closed to create a low vacuum atmosphere in the sample chamber.
This is achieved by observing with an M (Scanning Electron Microscope).
【０００６】[0006]
【発明の実施の形態】以下、本発明の実施例を図１によ
り説明する。真空チャンバー３はバルブ１２，１３を介
し油拡散ポンプ１４により排気されるようになってい
る。前記真空チャンバー２にはイオンビーム鏡筒２，電
子ビーム鏡筒１，２次電子検出器２９，反射電子検出器
３０及び試料ステージ４１が設けられている。前記試料
ステージ４１上に設置された試料４０上へのイオンビー
ム２８照射点の近傍には電子ビーム２７がイオンビーム
２８とはそのビーム軸方向を異にして照射されるように
なっている。前記電子ビーム鏡筒１内の電子銃室２１,
レンズ室２２は排気管１１を介して排気され高真空状態
としてある。前記イオンビーム鏡筒内のイオン源室２５
はイオンポンプ１７により排気され高真空状態としてあ
る。DETAILED DESCRIPTION OF THE INVENTION An embodiment of the present invention will be described below with reference to FIG. The vacuum chamber 3 is evacuated by an oil diffusion pump 14 via valves 12 and 13. The vacuum chamber 2 is provided with an ion beam column 2, an electron beam column 1, a secondary electron detector 29, a backscattered electron detector 30, and a sample stage 41. The electron beam 27 is irradiated in the vicinity of the irradiation point of the ion beam 28 on the sample 40 placed on the sample stage 41 with the beam axis direction of the ion beam 28 different from that of the ion beam 28. An electron gun chamber 21 in the electron beam lens barrel 1,
The lens chamber 22 is evacuated through the exhaust pipe 11 and is in a high vacuum state. Ion source chamber 25 in the ion beam column
Is evacuated by the ion pump 17 and is in a high vacuum state.
【０００７】本構成装置で予め表面に金属コーティング
を施した試料４０を加工する際は、バルブ１２，１３を
開いて真空チャンバー内を１×１０-4Paの高真空状態に
してイオンビーム鏡筒２内の遮断バルブ１０を開きイオ
ン源２４から発したイオンビーム２８を図示していない
各静電レンズ系と対物レンズ２６により試料４０表面上
に集束させ、図示していない偏向電極により所望の領域
をビーム走査し加工を行う。ここで対物レンズ２６には
ビームを集束させるために１３ｋV〜２０ｋVの高電圧を
印加してある。次いで加工断面の観察を行う場合、加工
面では表面に施した金属コーティングが取除かれ素地が
露出しているため高真空状態ではチャージアップが発生
するため低真空状態に切替て観察を行う。この場合まず
遮断バルブ１０を閉じてイオン源室２５内は１×１０-5
Paの高真空に保つようにする。このとき遮断バルブ１０
の動作に連動して試料チャンバー３側に配置された対物
レンズ２６に印加していた高電圧はOFFするようにす
る。次いでバルブ１２を閉じバルブ３４，３５を開いて
ニードルバルブ１８を調整しながらロータリーポンプ１
６で排気することにより１〜２７０Paの任意の真空度に
設定する。この場合、レンズ室２２，電子銃室２１は排
気管１１を介して油拡散ポンプ１４で排気され、かつレ
ンズ室２２と真空チャンバー３間には数百μｍの絞りで
あるオリフィス２３が設けられているためこの部位は１
×１０-4Paの高真空に保たれる。電子銃２０から発した
電子ビーム２７を図示していないレンズ系で集束し図示
していない走査偏向系により試料４０表面上を走査し、
発生した反射電子を反射電子検出器３０で検出し画像化
することで所望の断面をチャージアップすることなく良
好に観察が可能となる。When processing the sample 40 whose surface is previously coated with a metal by the present apparatus, the valves 12 and 13 are opened and the inside of the vacuum chamber is set to a high vacuum state of 1 × 10 -4 Pa. The shut-off valve 10 in 2 is opened to focus the ion beam 28 emitted from the ion source 24 on the surface of the sample 40 by each electrostatic lens system (not shown) and the objective lens 26, and a desired area is obtained by a deflection electrode (not shown). Beam scanning is performed. Here, a high voltage of 13 kV to 20 kV is applied to the objective lens 26 in order to focus the beam. Next, when observing the processed cross section, the metal coating applied to the surface of the processed surface is removed and the substrate is exposed, so charge-up occurs in the high vacuum state, and therefore the observation is switched to the low vacuum state. In this case, first, the shutoff valve 10 is closed and the inside of the ion source chamber 25 is 1 × 10 −5.
Try to maintain a high vacuum of Pa. At this time, the shutoff valve 10
The high voltage applied to the objective lens 26 arranged on the side of the sample chamber 3 is turned off in association with the above operation. Next, the valve 12 is closed and the valves 34 and 35 are opened to adjust the needle valve 18, and the rotary pump 1
By evacuating at 6, an arbitrary vacuum degree of 1 to 270 Pa is set. In this case, the lens chamber 22 and the electron gun chamber 21 are exhausted by the oil diffusion pump 14 via the exhaust pipe 11, and an orifice 23, which is a diaphragm of several hundred μm, is provided between the lens chamber 22 and the vacuum chamber 3. Therefore, this part is 1
It is kept at a high vacuum of × 10 -4 Pa. An electron beam 27 emitted from the electron gun 20 is focused by a lens system (not shown), and the surface of the sample 40 is scanned by a scanning deflection system (not shown).
The generated backscattered electrons are detected by the backscattered electron detector 30 to form an image, which enables good observation without charging up a desired cross section.
【０００８】[0008]
【発明の効果】本発明によれば、半導体ないし絶縁物試
料において加工断面をチャージアップ無く良好かつ迅速
に観察可能となる。According to the present invention, a processed cross section of a semiconductor or insulator sample can be satisfactorily and quickly observed without charge-up.
【図１】本発明の一実施例のイオンビーム加工装置の構
成図である。FIG. 1 is a configuration diagram of an ion beam processing apparatus according to an embodiment of the present invention.
１…電子ビーム鏡筒、２…イオンビーム鏡筒、３…真空
チャンバー、１０…遮断バルブ、１１…排気管、１２，
１３…バルブ、１４…油拡散ポンプ、１５，１６…ロー
タリーポンプ、１７…イオンポンプ、１８…ニードルバ
ルブ、２０…電子銃、２１…電子銃室、２２…レンズ
室、２３…オリフィス、２４…イオン源、２５…イオン
源室、２６…対物レンズ、２７…電子ビーム、２８…イ
オンビーム、２９…２次電子検出器、３０…反射電子検
出器、３１，３２，３３，３４，３５，３６，３７…バ
ルブ、４０…試料、４１…ステージ。DESCRIPTION OF SYMBOLS 1 ... Electron beam column, 2 ... Ion beam column, 3 ... Vacuum chamber, 10 ... Shutoff valve, 11 ... Exhaust pipe, 12,
13 ... Valve, 14 ... Oil diffusion pump, 15, 16 ... Rotary pump, 17 ... Ion pump, 18 ... Needle valve, 20 ... Electron gun, 21 ... Electron gun chamber, 22 ... Lens chamber, 23 ... Orifice, 24 ... Ion Source, 25 ... Ion source chamber, 26 ... Objective lens, 27 ... Electron beam, 28 ... Ion beam, 29 ... Secondary electron detector, 30 ... Reflected electron detector, 31, 32, 33, 34, 35, 36, 37 ... Valve, 40 ... Sample, 41 ... Stage.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5C033 KK01 KK06 UU03 UU10 5C034 AA02 AA04 AA09 AB07 AB09 5F004 BA11 BA17 BB01 BC01 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 5C033 KK01 KK06 UU03 UU10 5C034 AA02 AA04 AA09 AB07 AB09 5F004 BA11 BA17 BB01 BC01
Claims (3)
系と、電子ビーム照射系、各ビーム走査時に試料から放
出される２次電子を捕らえる検出器、上記検出器からの
出力を表示する像表示装置およびビーム切替機構を有
し、前記イオンビーム照射系と電子ビーム照射系を軸方
向を異にして同一試料室に装備し、前記イオンビームで
試料を加工した際の加工面を試料室を低真空の状態にし
て前記電子ビームの走査条件により観察することを特徴
とする集束イオンビーム加工装置。1. An ion beam irradiation system for scanning and irradiating a sample surface, an electron beam irradiation system, a detector for capturing secondary electrons emitted from the sample during each beam scanning, and an image display for displaying the output from the detector. The ion beam irradiation system and the electron beam irradiation system are installed in the same sample chamber with different axial directions, and the machined surface when the sample is processed by the ion beam is set in the sample chamber. A focused ion beam processing apparatus, characterized in that it is observed under a scanning condition of the electron beam in a vacuum state.
ン源室と試料室側の排気系を遮断するためのバルブを設
け、本バルブを閉じないと試料室を低真空状態にできな
いような機構を具有した請求の範囲第１項記載の集束イ
オンビーム加工装置。2. The ion beam irradiation system is provided with a valve for shutting off the exhaust system on the side of the ion source chamber and the sample chamber, and is provided with a mechanism for keeping the sample chamber in a low vacuum state unless the valve is closed. The focused ion beam processing apparatus according to claim 1.
バルブを閉じると試料室側に配置した対物レンズの高電
圧を落とすような機構を具有した請求の範囲第１項記載
の集束イオンビーム加工装置。3. The focused ion beam processing apparatus according to claim 1, further comprising a mechanism for dropping the high voltage of the objective lens arranged on the sample chamber side when the valve is closed in the ion beam irradiation system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001353951A JP3944384B2 (en) | 2001-11-20 | 2001-11-20 | Focused ion beam processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001353951A JP3944384B2 (en) | 2001-11-20 | 2001-11-20 | Focused ion beam processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003157792A true JP2003157792A (en) | 2003-05-30 |
| JP3944384B2 JP3944384B2 (en) | 2007-07-11 |
Family
ID=19165877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001353951A Expired - Lifetime JP3944384B2 (en) | 2001-11-20 | 2001-11-20 | Focused ion beam processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3944384B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120909A (en) * | 2004-10-22 | 2006-05-11 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Processing method of dielectric material, and semiconductor device manufactured thereby |
-
2001
- 2001-11-20 JP JP2001353951A patent/JP3944384B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120909A (en) * | 2004-10-22 | 2006-05-11 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | Processing method of dielectric material, and semiconductor device manufactured thereby |
| JP4565235B2 (en) * | 2004-10-22 | 2010-10-20 | 財団法人北九州産業学術推進機構 | Dielectric material processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3944384B2 (en) | 2007-07-11 |
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