JP2003155560A - Silver alloy sputtering target for forming reflection layer of optical recording medium - Google Patents

Silver alloy sputtering target for forming reflection layer of optical recording medium

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Publication number
JP2003155560A
JP2003155560A JP2001352593A JP2001352593A JP2003155560A JP 2003155560 A JP2003155560 A JP 2003155560A JP 2001352593 A JP2001352593 A JP 2001352593A JP 2001352593 A JP2001352593 A JP 2001352593A JP 2003155560 A JP2003155560 A JP 2003155560A
Authority
JP
Japan
Prior art keywords
mass
silver alloy
alloy
optical recording
reflective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001352593A
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Japanese (ja)
Other versions
JP3803864B2 (en
Inventor
Terushi Mishima
昭史 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2001352593A priority Critical patent/JP3803864B2/en
Priority to TW92113376A priority patent/TWI314166B/en
Publication of JP2003155560A publication Critical patent/JP2003155560A/en
Application granted granted Critical
Publication of JP3803864B2 publication Critical patent/JP3803864B2/en
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Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming an Ag alloy reflection layer of an optical recording medium such as an optical recording disk (CD-RW, DVD-RAM). SOLUTION: This sputtering target consists of: a silver alloy (1) having a composition containing, by mass, 0.5 to 5% Cu and 0.05 to 2% Ni, and the balance Ag; a silver alloy (2) containing one or more kinds selected form Ca, Be and Si by 0.005 to 0.05% in total in the silver alloy (1); a silver alloy (3) containing one or more kinds selected from Dy, La, Nd, Tb and Gd by 0.1 to 3% in total in the silver alloy (1); or a silver alloy (4) containing 0.5 to 5% Cu, 0.05 to 2% Ni and one or more kinds selected from Dy, La, Nd, Tb and Gd by 0.1 to 3% in total, and one or more kinds selected from Ca, Be and Si by 0.005 to 0.05% in total in the silver alloy (1).

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、半導体レーザー
などのレーザービームを用いて音声、映像、文字などの情
報信号を再生あるいは記録・再生・消去を行う光記録デ
ィスク(CD−RW,DVD−RAM)などの光記録媒
体の構成層である半透明反射層または反射層(以下、両者
を含めて反射層と呼ぶ)をスパッタリング法にて形成す
るための銀合金スパッタリングターゲットに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical recording disk (CD-RW, DVD-RAM) for reproducing or recording / reproducing / erasing information signals such as audio, video and characters by using a laser beam such as a semiconductor laser. ) Etc. for forming a semitransparent reflective layer or a reflective layer (hereinafter, both are referred to as a reflective layer), which is a constituent layer of an optical recording medium, by a sputtering method.

【0002】[0002]

【従来の技術】従来、光記録ディスク(CD−RW,D
VD−RAM)などの光記録媒体の反射層としてAgま
たはAg合金反射層が使用されており、このAgまたは
Ag合金反射層は400〜830nmの幅広い波長域で
の反射率が高く、特に光記録媒体の高密度化記録に用い
られる短波長のレーザー光に対して反射率が大きいので
好適であるとされている。 前記AgまたはAg合金反射層の形成には、Ag、また
はAg−Cu合金、Ag−Ni合金などのAg合金から
なるターゲットをスパッタすることにより形成されるこ
とが知られている(特開昭57−186244号公報参
照、特開2001−35014号公報参照)。
2. Description of the Related Art Conventionally, optical recording disks (CD-RW, D
An Ag or Ag alloy reflective layer is used as a reflective layer of an optical recording medium such as a VD-RAM), and this Ag or Ag alloy reflective layer has a high reflectance in a wide wavelength range of 400 to 830 nm, and particularly optical recording. It is said that it is suitable because it has a large reflectance with respect to a laser beam having a short wavelength used for high density recording of a medium. It is known that the Ag or Ag alloy reflective layer is formed by sputtering a target made of Ag or an Ag alloy such as an Ag-Cu alloy or an Ag-Ni alloy (JP-A-57). -186244, and Japanese Patent Laid-Open No. 2001-35014).

【0003】[0003]

【発明が解決しようとする課題】しかし、光記録媒体の
中でも記録層に相変化記録材料を用い、繰り返し記録・
再生・消去を行う光記録媒体においては、記録・再生・
消去の繰り返し回数が増大するにつれて、AgまたはA
g合金反射層の反射率が低下し、長期に亘る十分な記録
再生耐性が得られなかった。この原因の一つとして光記
録媒体に繰り返し記録・再生・消去を行うと、レーザー
光の照射によりAg反射層の加熱冷却が繰り返され、そ
れによってAg反射層が再結晶化し、結晶粒が粗大化す
ることによって反射率が低下することを突き止めた。
However, even in an optical recording medium, a phase change recording material is used for the recording layer, and repeated recording / recording is performed.
In the case of an optical recording medium that reproduces and erases,
As the number of repetitions of erasing increases, Ag or A
The reflectivity of the g-alloy reflective layer was lowered, and sufficient recording / reproducing durability could not be obtained for a long period of time. As one of the causes of this, when recording / reproducing / erasing is repeatedly performed on the optical recording medium, the Ag reflecting layer is repeatedly heated and cooled by the irradiation of the laser beam, whereby the Ag reflecting layer is recrystallized and the crystal grains become coarse. By doing so, it was found that the reflectance decreases.

【0004】[0004]

【課題を解決するための手段】そこで本発明者らは、記
録・再生・消去の繰り返し回数が増大しても反射層の反
射率が低下することの少ないAg合金反射層を得るべく
研究を行った。その結果、 (イ)AgにCuおよびNiを共に添加した銀合金から
なるターゲットを用いてスパッタすることにより得られ
た銀合金反射層は、従来のAg、Ag−Cu合金または
Ag−Ni合金からなるターゲットをスパッタすること
により形成された銀合金反射層に比べて、レーザービー
ムの繰り返し照射による繰り返し加熱冷却を受けても結
晶粒が粗大化することが一層少なく、このCuおよびN
iを共に含有する銀合金反射層の成分組成はCu:0.
5〜5質量%、Ni:0.05〜2質量%を含み、残部
がAgであることが好ましい、 (ロ)Cu:0.5〜5質量%、Ni:0.05〜2質
量%を含み、さらにCa,Be,Siから選ばれる1種
または2種以上の合計:0.005〜0.05質量%を
含有し、残部がAgである組成の銀合金ターゲットを用
いてスパッタリングすることにより得られた銀合金反射
層は、レーザービームの繰り返し照射に伴う繰り返し加
熱冷却を受けても結晶粒が粗大化することが一層少な
く、したがって、長期間使用しても反射率の低下が極め
て少ない、(ハ)Cu:0.5〜5質量%、Ni:0.
05〜2質量%を含み、さらにDy,La,Nd,T
b,Gdから選ばれる1種または2種以上の合計:0.
1〜3質量%を含み、残部がAgである組成の銀合金タ
ーゲットを用いてスパッタリングすることにより得られ
た銀合金反射層は、レーザービームの繰り返し照射に伴
う繰り返し加熱冷却を受けても結晶粒が粗大化すること
が一層少なく、したがって、長期間使用しても反射率の
低下が極めて少ない、(ニ)Cu:0.5〜5質量%、
Ni:0.05〜2質量%を含み残部がAgである組成
の銀合金に、さらにCa,Be,Siから選ばれる1種
または2種以上の合計:0.005〜0.05質量%と
Dy,La,Nd,Tb,Gdから選ばれる1種または
2種以上の合計:0.1〜3質量%とを共に含んだ銀合
金ターゲットを用いてスパッタリングすることにより得
られた銀合金反射層でも同じ効果が得られる、という研
究結果が得られたのである。
Therefore, the present inventors have conducted research to obtain an Ag alloy reflective layer in which the reflectance of the reflective layer is less likely to decrease even if the number of recording / reproducing / erasing is increased. It was As a result, (a) the silver alloy reflective layer obtained by sputtering using a target made of a silver alloy in which Cu and Ni were added to Ag was prepared from a conventional Ag, Ag-Cu alloy or Ag-Ni alloy. In comparison with the silver alloy reflective layer formed by sputtering the target, the crystal grains are less likely to coarsen even after being repeatedly heated and cooled by the repeated irradiation of the laser beam.
The composition of the silver alloy reflection layer containing both i and Cu is Cu: 0.
5 to 5% by mass, Ni: 0.05 to 2% by mass, with the balance being preferably Ag, (b) Cu: 0.5 to 5% by mass, Ni: 0.05 to 2% by mass. In addition, by sputtering using a silver alloy target having a composition containing one or more selected from Ca, Be, and Si: 0.005 to 0.05 mass% and the balance being Ag. The obtained silver alloy reflective layer is less likely to have crystal grains coarsened even when subjected to repeated heating and cooling associated with repeated irradiation of a laser beam, and therefore, there is very little decrease in reflectance even after long-term use, (C) Cu: 0.5 to 5 mass%, Ni: 0.
05 to 2 mass%, further Dy, La, Nd, T
b, a total of one or more selected from Gd: 0.
The silver alloy reflective layer obtained by sputtering using a silver alloy target having a composition containing 1 to 3% by mass and the balance being Ag has crystal grains even when subjected to repeated heating and cooling due to repeated irradiation of a laser beam. Is less likely to coarsen, and therefore, the decrease in reflectance is extremely small even after long-term use, (d) Cu: 0.5 to 5 mass%,
Ni: A silver alloy having a composition containing 0.05 to 2 mass% and the balance being Ag, and a total of one kind or two or more kinds selected from Ca, Be, and Si: 0.005 to 0.05 mass%. Silver alloy reflective layer obtained by sputtering using a silver alloy target containing at least one kind selected from Dy, La, Nd, Tb, and Gd, or a total of 0.1 to 3 mass%. However, the research result that the same effect can be obtained was obtained.

【0005】この発明は、かかる研究結果に基づいて成
されたものであって、(1)Cu:0.5〜5質量%、
Ni:0.05〜2質量%を含有し、残部がAgである
組成の銀合金からなる光記録媒体の反射層形成用銀合金
スパッタリングターゲット、(2)Cu:0.5〜5質
量%、Ni:0.05〜2質量%を含有し、さらにC
a,Be,Siから選ばれる1種または2種以上の合
計:0.005〜0.05質量%を含有し、残部がAg
である組成の銀合金からなる光記録媒体の反射層形成用
銀合金スパッタリングターゲット、(3)Cu:0.5
〜5質量%、Ni:0.05〜2質量%を含有し、さら
にDy,La,Nd,Tb,Gdから選ばれる1種また
は2種以上の合計:0.1〜3質量%を含有し、残部が
Agである組成の銀合金からなる光記録媒体の反射層形
成用銀合金スパッタリングターゲット、(4)Cu:
0.5〜5質量%、Ni:0.05〜2質量%を含有
し、さらにCa,Be,Siから選ばれる1種または2
種以上の合計:0.005〜0.05質量%を含有し、
さらにDy,La,Nd,Tb,Gdから選ばれる1種
または2種以上の合計:0.1〜3質量%を含有し、残
部がAgである組成の銀合金からなる光記録媒体の反射
層形成用銀合金スパッタリングターゲット、に特徴を有
するものである。
The present invention was made on the basis of the results of such research. (1) Cu: 0.5 to 5% by mass,
Ni: 0.05 to 2% by mass, the balance being Ag alloy sputtering target for forming a reflective layer of an optical recording medium made of a silver alloy having a composition of Ag, (2) Cu: 0.5 to 5% by mass, Ni: 0.05 to 2% by mass, and further C
a, Be, Si, or a total of one or more selected from: 0.005 to 0.05% by mass, with the balance being Ag.
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having a composition of (3) Cu: 0.5
-5% by mass, Ni: 0.05-2% by mass, and one or more kinds selected from Dy, La, Nd, Tb, Gd in total: 0.1-3% by mass. A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having a balance of Ag, (4) Cu:
0.5 to 5% by mass, Ni: 0.05 to 2% by mass, and one or two selected from Ca, Be and Si.
Total of seeds or more: contains 0.005-0.05 mass%,
Furthermore, a reflection layer of an optical recording medium containing a silver alloy having a composition of 0.1 to 3 mass% of one or more selected from Dy, La, Nd, Tb, and Gd, and the balance being Ag. The present invention is characterized by a silver alloy sputtering target for forming.

【0006】この発明の銀合金反射層を形成するための
スパッタリングターゲットは、原料としていずれも純
度:99.99質量%以上の高純度Agおよび高純度C
u、並びに純度:99.9質量%以上のNi、Dy,L
a,Nd,TbおよびGdを用意し、これら原料を高真
空または不活性ガス雰囲気中で溶解し、得られた溶湯を
真空または不活性ガス雰囲気中で鋳造してインゴットを
作製し、これらインゴットを熱間加工したのち機械加工
することにより製造することができる。
The sputtering targets for forming the silver alloy reflective layer of the present invention each have a purity of 99.99% by mass or more as high purity Ag and high purity C as raw materials.
u, and purity: Ni, Dy, L of 99.9 mass% or more
a, Nd, Tb and Gd are prepared, these raw materials are melted in a high vacuum or an inert gas atmosphere, and the obtained molten metal is cast in a vacuum or an inert gas atmosphere to prepare an ingot. It can be manufactured by hot working and then mechanical working.

【0007】Agへの固溶が殆どないCa,Beおよび
Siについては、それぞれの各元素の濃度が0.20質
量%となるようにAgを配合した後、高周波真空溶解に
て溶解し、溶解後炉内圧力が大気圧となるまでArガス
を充填した後黒鉛製鋳型に鋳造してCa,BeおよびS
iを含むAgの母合金を作製し、また同様にAgへの固
溶が殆どないNiについてはNiの濃度が5〜95質量
%となるようにCuを配合した後、高周波真空溶解にて
溶解し、溶解後真空雰囲気にて黒鉛製鋳型に鋳造してN
iを含むCuの母合金を作製し、これら母合金を必要に
応じてCuとともに添加して溶解し鋳造することにより
インゴットを作製し、得られたインゴットを熱間加工し
たのち機械加工することにより製造することができる。
For Ca, Be and Si, which have almost no solid solution in Ag, Ag is blended so that the concentration of each element becomes 0.20% by mass, and then dissolved by high-frequency vacuum melting to dissolve. After filling Ar gas until the post-reactor pressure reaches atmospheric pressure, it is cast in a graphite mold to form Ca, Be and S.
A mother alloy of Ag containing i was produced, and similarly, for Ni having little solid solution in Ag, Cu was blended so that the concentration of Ni was 5 to 95% by mass and then melted by high frequency vacuum melting. After melting and casting in a graphite mold in a vacuum atmosphere, N
By preparing a master alloy of Cu containing i, adding these master alloys together with Cu if necessary, and melting and casting, an ingot is prepared, and the obtained ingot is hot worked and then machined. It can be manufactured.

【0008】次に、この発明のAg合金からなる反射層
およびこのAg合金からなる反射層を形成するためのス
パッタリングターゲットにおける成分組成を前記の如く
限定した理由を説明する。
Next, the reason why the component composition in the reflective layer made of the Ag alloy of the present invention and the sputtering target for forming the reflective layer made of the Ag alloy is limited as described above will be explained.

【0009】Cu:Cuは、Agに固溶して結晶粒の強
度を高め、結晶粒の再結晶粒化を防止し、スパッタにより
形成された反射層の反射率の低下を抑制する効果がある
が、Cuを0.5質量%未満含んでも十分な結晶粒の再
結晶粒化を防止することができないので反射層の反射率
の低下を抑止することができず、一方、Cuが5質量%を
越えて含有すると、スパッタにより形成されたAg合金
反射層の内部応力が大きくなり、反射層が剥がれやすく
なるので好ましくない。したがって、Ag合金反射層お
よびこのAg合金反射層を形成するためのスパッタリン
グターゲットに含まれるこれらCuの含有量は0.5〜
5質量%(一層好ましくは1.0〜3質量%)に定めた。
Cu: Cu has the effects of forming a solid solution with Ag to increase the strength of crystal grains, prevent recrystallization of crystal grains, and suppress a decrease in reflectance of the reflective layer formed by sputtering. However, even if Cu is included in an amount of less than 0.5% by mass, it is not possible to prevent recrystallization of sufficient crystal grains, and therefore it is not possible to prevent a decrease in reflectance of the reflective layer. If the content exceeds the above range, the internal stress of the Ag alloy reflective layer formed by sputtering increases, and the reflective layer is easily peeled off, which is not preferable. Therefore, the content of these Cu contained in the Ag alloy reflective layer and the sputtering target for forming this Ag alloy reflective layer is 0.5 to 0.5.
It was set to 5% by mass (more preferably 1.0 to 3% by mass).

【0010】Ni:Niは、Agにほとんど固溶せず、
結晶粒界に析出することにより結晶粒同士の結合を防止
し、反射層の結晶粒の再結晶粒化を防止し、スパッタに
より形成された反射層の反射率の低下を抑制する効果が
あるが、Niを0.05質量%未満含んでも格段の効果
が得られず、一方、Niが2質量%を越えて含有する
と、膜応力が大きくなり、スパッタ直後に膜にクラック
が入るので好ましくない。したがって、Ag合金反射層
およびこのAg合金反射層を形成するためのスパッタリ
ングターゲットに含まれるこれらNiの含有量は0.0
5〜2質量%(一層好ましくは0.1〜1.5質量%)に
定めた。
Ni: Ni hardly forms a solid solution with Ag,
By precipitating at the crystal grain boundaries, the binding of the crystal grains is prevented, the crystal grains of the reflective layer are prevented from being recrystallized, and the reflectance of the reflective layer formed by sputtering is reduced. , Ni is less than 0.05% by mass, no remarkable effect can be obtained. On the other hand, if Ni is more than 2% by mass, the film stress is increased and the film is cracked immediately after sputtering, which is not preferable. Therefore, the content of these Ni contained in the Ag alloy reflective layer and the sputtering target for forming the Ag alloy reflective layer is 0.0.
It is set to 5 to 2% by mass (more preferably 0.1 to 1.5% by mass).

【0011】Ca,Be,Si:これら成分は、Niと
同様にAgに殆ど固溶せず、結晶粒界に析出することに
より結晶粒同士の結合を防止し、Ag合金反射層の再結
晶化防止をさらに促進する成分であるが、これら成分の
1種または2種以上を合計で0.005質量%未満含ん
でも格段の効果が得られず、一方、これら成分の1種また
は2種以上を合計で0.05質量%を越えて含有する
と、ターゲットが著しく硬化し、ターゲットの作製が困
難になるので好ましくない。したがって、Ag合金反射
層およびこのAg合金反射層を形成するためのスパッタ
リングターゲットに含まれるこれら成分の含有量は0.
005〜0.05質量%(一層好ましくは0.010〜
0.035質量%)に定めた。
Ca, Be, Si: These components, like Ni, hardly form a solid solution in Ag and precipitate at the crystal grain boundaries to prevent the bonding of the crystal grains to each other, thereby recrystallizing the Ag alloy reflection layer. Although it is a component that further promotes prevention, even if the total amount of one or more of these components is less than 0.005% by mass, no remarkable effect can be obtained, while one or more of these components are If the total content exceeds 0.05% by mass, the target remarkably hardens, and it becomes difficult to manufacture the target, which is not preferable. Therefore, the content of these components contained in the Ag alloy reflective layer and the sputtering target for forming this Ag alloy reflective layer is 0.
005 to 0.05 mass% (more preferably 0.010 to
0.035% by mass).

【0012】Dy,La,Nd,Tb,Gd:これら成
分は、Agとの反応により金属間化合物を結晶粒界に形
成して結晶粒同士の結合を防止し、Ag合金反射層の再
結晶化防止をさらに促進する成分であるが、これら成分
の1種または2種以上を合計で0.1質量%未満含んで
も格段の効果が得られず、一方、これら成分の1種または
2種以上を合計で3質量%を越えて含有すると、ターゲ
ットが著しく硬化し、ターゲットの作製が困難になるの
で好ましくない。したがって、Ag合金反射層およびこ
のAg合金反射層を形成するためのスパッタリングター
ゲットに含まれるこれら成分の含有量は0.1〜3質量
%(一層好ましくは0.2〜1.5質量%)に定めた。
Dy, La, Nd, Tb, Gd: These components form an intermetallic compound at the crystal grain boundary by reaction with Ag to prevent the crystal grains from binding to each other and recrystallize the Ag alloy reflection layer. Although it is a component that further promotes prevention, a remarkable effect cannot be obtained even if the total amount of one or more of these components is less than 0.1% by mass. On the other hand, if one or more of these components are contained, If the total content exceeds 3% by mass, the target remarkably hardens, and it becomes difficult to manufacture the target, which is not preferable. Therefore, the content of these components contained in the Ag alloy reflective layer and the sputtering target for forming the Ag alloy reflective layer is 0.1 to 3% by mass (more preferably 0.2 to 1.5% by mass). Specified.

【0013】[0013]

【発明の実施の形態】実施例1 原料として、いずれも純度:99.99質量%以上の高
純度Agおよび高純度Cuを用意した。さらにNiにつ
いてはAgへの固溶が殆ど無いので、NiをCuと共に
高周波真空溶解炉で溶解し、黒鉛鋳型に鋳造して予めN
iを含むCuの母合金を作製しておき、これを原料とし
て用意した。これら用意したAg、CuおよびNiを含
むCuの母合金を高周波真空溶解炉で溶解し、得られた
溶湯をArガス雰囲気中で黒鉛鋳型に鋳造してインゴッ
トを作製し、これらインゴットを600℃、2時間加熱
した後、圧延し、次いで機械加工することにより直径:1
25mm、厚さ:5mmの寸法を有し、表1に示される
成分組成を有する本発明ターゲット1〜9、比較ターゲ
ット1〜3および従来ターゲット1〜2製造した。
BEST MODE FOR CARRYING OUT THE INVENTION Example 1 As raw materials, high-purity Ag and high-purity Cu each having a purity of 99.99% by mass or more were prepared. Furthermore, since Ni has almost no solid solution in Ag, Ni is melted together with Cu in a high-frequency vacuum melting furnace and cast in a graphite mold to prepare N in advance.
A Cu master alloy containing i was prepared and prepared as a raw material. The prepared Cu mother alloy containing Ag, Cu and Ni was melted in a high frequency vacuum melting furnace, and the resulting melt was cast in a graphite mold in an Ar gas atmosphere to produce an ingot. After heating for 2 hours, rolling, then machining: Diameter: 1
The targets 1 to 9 of the present invention, the comparative targets 1 to 3 and the conventional targets 1 and 2 having the composition of components shown in Table 1 were produced having dimensions of 25 mm and thickness: 5 mm.

【0013】これら本発明ターゲット1〜9、比較ター
ゲット1〜3および従来ターゲット1〜2をそれぞれ無
酸素銅製のバッキングプレートにはんだ付けし、これを
直流マグネトロンスパッタ装置に装着し、真空排気装置
にて直流マグネトロンスパッタ装置内を1×10-4Pa
まで排気した後、Arガスを導入して1.0Paのスパ
ッタガス圧とし、続いて直流電源にてターゲットに10
0Wの直流スパッタ電力を印加し、前記ターゲットに対
抗しかつ70mmの間隔を設けてターゲットと平行に配
置した直径:30mm、厚さ:0.5mmのガラス基板
と前記ターゲットの間にプラズマを発生させ、厚さ:1
00nmのAg合金反射膜を形成した。
The targets 1 to 9 of the present invention, the targets 1 to 3 for comparison, and the targets 1 and 2 for related art are soldered to backing plates made of oxygen-free copper, mounted on a DC magnetron sputtering apparatus, and then evacuated by a vacuum exhaust apparatus. 1 × 10 -4 Pa inside the DC magnetron sputtering system
After evacuation to Ar gas, Ar gas is introduced to obtain a sputtering gas pressure of 1.0 Pa, and then the target is 10
A direct current sputtering power of 0 W was applied to generate plasma between the target and a glass substrate having a diameter of 30 mm and a thickness of 0.5 mm, which was placed in parallel with the target at a distance of 70 mm, facing the target. , Thickness: 1
An Ag alloy reflective film of 00 nm was formed.

【0014】このようにして形成した各Ag合金反射膜
の成膜直後の反射率を分光光度計により測定した。その
後、形成した各Ag合金反射膜を温度:80℃、相対湿
度:85%の恒温恒室槽にて200時間保持したのち、
再度同じ条件で反射率を測定した。得られた反射率デー
タから、波長:400nmおよび650nmにおける各
反射率を求め、その結果を表1に示して光記録媒体の反
射膜として記録再生耐性を評価した。
The reflectance of each Ag alloy reflective film thus formed immediately after its formation was measured by a spectrophotometer. After that, each formed Ag alloy reflective film was kept in a constant temperature and temperature chamber at a temperature of 80 ° C. and a relative humidity of 85% for 200 hours.
The reflectance was measured again under the same conditions. From the obtained reflectance data, the reflectances at wavelengths of 400 nm and 650 nm were obtained, and the results are shown in Table 1 to evaluate the recording / reproducing durability as a reflective film of an optical recording medium.

【0015】[0015]

【表1】 [Table 1]

【0016】表1に示される結果から、この発明の本発
明ターゲット1〜9を用いてスパッタリングを行うこと
により得られた反射層は、比較ターゲット1〜3および
従来ターゲット1〜2を用いてスパッタリングを行うこ
とにより得られた反射層に比べて、温度:80℃、相対湿
度:85%の恒温恒室槽にて200時間保持後の反射率
の低下が少ないことがわかる。
From the results shown in Table 1, the reflective layers obtained by sputtering the targets 1 to 9 of the present invention according to the present invention were used for the sputtering using the comparative targets 1 to 3 and the conventional targets 1 and 2. It can be seen that, compared with the reflective layer obtained by performing the above step, the decrease in reflectance after 200 hours of holding in a constant temperature and temperature chamber at a temperature of 80 ° C. and a relative humidity of 85% is small.

【0017】実施例2 原料として純度:99.9質量%以上のCa,Beおよ
びSiを用意した。Ca,BeおよびSiはAgへの固
溶が殆どないので、それぞれの各元素の濃度が0.20
質量%となるよにAgを配合した後、高周波真空溶解に
て溶解し、溶解後炉内圧力が大気圧となるまでArガス
を充填したのち黒鉛製鋳型に鋳造することにより予めC
a,BeまたはSiを含むAgの母合金を作製した。こ
れら母合金を実施例1で用意したCuおよびNiを含む
Cuの母合金と共にAgに添加して溶解し鋳造すること
によりインゴットを作製し、得られたインゴットを60
0℃、2時間加熱した後、圧延し、次いで機械加工するこ
とにより直径:125mm、厚さ:5mmの寸法を有
し、表2〜3に示される成分組成を有する本発明ターゲ
ット10〜27を製造した。
Example 2 Ca, Be and Si having a purity of 99.9% by mass or more were prepared as raw materials. Since Ca, Be and Si have almost no solid solution in Ag, the concentration of each element is 0.20.
After blending Ag so that the content of the mixture becomes% by mass, it is melted by high-frequency vacuum melting, and after melting, Ar gas is filled until the pressure in the furnace becomes atmospheric pressure, and then cast in a graphite mold to prepare C in advance.
A master alloy of Ag containing a, Be or Si was prepared. These master alloys were added to Ag together with the Cu master alloy containing Cu and Ni prepared in Example 1 and melted and cast to prepare an ingot.
After heating at 0 ° C. for 2 hours, rolling, and then machining, the targets 10 to 27 of the present invention having dimensions of diameter: 125 mm, thickness: 5 mm and having the composition of components shown in Tables 2 to 3 are obtained. Manufactured.

【0018】このようにして得られた本発明ターゲット
10〜27について、実施例1と同様にしてガラス基板
表面に厚さ:100nmのAg合金反射膜を形成し、各
Ag合金反射膜の成膜直後の反射率を分光光度計により
測定した。その後、形成した各Ag合金反射膜を温度:
80℃、相対湿度:85%の恒温恒室槽にて200時間
保持したのち、再度同じ条件で反射率を測定した。得ら
れた反射率のデータから、波長:400nmおよび65
0nmにおける各反射率を求め、その結果を表3〜4に
示して光記録媒体の反射膜として記録再生耐性を評価し
た。
With respect to the targets 10 to 27 of the present invention thus obtained, an Ag alloy reflection film having a thickness of 100 nm was formed on the glass substrate surface in the same manner as in Example 1, and each Ag alloy reflection film was formed. The reflectance immediately after was measured with a spectrophotometer. After that, each Ag alloy reflective film thus formed was subjected to temperature:
After holding in a constant temperature and constant temperature chamber at 80 ° C. and a relative humidity of 85% for 200 hours, the reflectance was measured again under the same conditions. From the obtained reflectance data, wavelengths: 400 nm and 65
The respective reflectances at 0 nm were obtained, and the results are shown in Tables 3 to 4 to evaluate the recording / reproducing durability as a reflective film of the optical recording medium.

【0019】[0019]

【表2】 [Table 2]

【0020】[0020]

【表3】 [Table 3]

【0021】表2〜3に示される結果から、この発明の
本発明ターゲット10〜27を用いてスパッタリングを
行うことにより得られた反射層は、表1に示される従来
ターゲット1〜2を用いてスパッタリングを行うことに
より得られた反射層に比べて、温度:80℃、相対湿度:
85%の恒温恒室槽にて200時間保持後の反射率の低
下が少ないことがわかる。しかし、比較ターゲット4〜
7に見られるように、Ca,BeおよびSiが合計で
0.05質量%より多く含有すると、圧延中に割れが発
生するなどして成形できなくなることが分かる。
From the results shown in Tables 2 to 3, the reflective layers obtained by sputtering using the targets 10 to 27 of the present invention of the present invention were prepared using the conventional targets 1 and 2 shown in Table 1. Compared with the reflective layer obtained by sputtering, temperature: 80 ° C., relative humidity:
It can be seen that there is little decrease in reflectance after 200 hours of holding in an 85% constant temperature constant temperature chamber. However, comparison target 4 ~
As can be seen from FIG. 7, when Ca, Be and Si are contained in a total amount of more than 0.05 mass%, it cannot be formed due to cracking during rolling.

【0022】実施例3 原料として純度:99.9質量%以上のDy,La,N
d,TbおよびGdを用意し、これら原料を実施例1で
用意したCuおよびNiを含むCuの母合金並びに実施
例2で用意したCa,BeまたはSiを含むAgの母合
金と共にAgに添加して高周波真空溶解炉で溶解し、得
られた溶湯をArガス雰囲気中で黒鉛鋳型に鋳造してイ
ンゴットを作製し、得られたインゴットを600℃、2
時間加熱した後、圧延し、次いで機械加工することにより
直径:125mm、厚さ:5mmの寸法を有し、表4〜
6に示される成分組成を有する本発明ターゲット28〜
52および比較ターゲット8〜13を製造した。
Example 3 Purity as raw material: Dy, La, N having a purity of 99.9 mass% or more
d, Tb and Gd were prepared, and these raw materials were added to Ag together with the Cu mother alloy containing Cu and Ni prepared in Example 1 and the Ag mother alloy containing Ca, Be or Si prepared in Example 2. Melted in a high-frequency vacuum melting furnace, cast the resulting melt in a graphite mold in an Ar gas atmosphere to produce an ingot, and heat the obtained ingot at 600 ° C. for 2
After being heated for an hour, rolled and then machined to have a diameter of 125 mm and a thickness of 5 mm.
The target 28 of the present invention having the component composition shown in FIG.
52 and comparative targets 8-13 were manufactured.

【0023】これら本発明ターゲット28〜52および
較ターゲット8〜13をそれぞれ無酸素銅製のバッキン
グプレートにはんだ付けし、これを直流マグネトロンス
パッタ装置に装着し、真空排気装置にて直流マグネトロ
ンスパッタ装置内を1×10- 4Paまで排気した後、A
rガスを導入して1.0Paのスパッタガス圧とし、続
いて直流電源にてターゲットに100Wの直流スパッタ
電力を印加し、前記ターゲットに対抗しかつ70mmの
間隔を設けてターゲットと平行に配置した直径:30m
m、厚さ:0.5mmのガラス基板と前記ターゲットの
間にプラズマを発生させ、厚さ:100nmのAg合金
反射膜を形成した。
Each of the targets 28 to 52 of the present invention and the targets 8 to 13 of the present invention is soldered to a backing plate made of oxygen-free copper, mounted on a DC magnetron sputtering device, and the inside of the DC magnetron sputtering device is vacuum exhausted. 1 × 10 - 4 was evacuated to Pa, A
Introducing r gas to adjust the sputtering gas pressure to 1.0 Pa, and subsequently applying DC sputtering power of 100 W to the target with a DC power source, the target was opposed to the target, and the target was placed in parallel with the target with an interval of 70 mm. Diameter: 30m
Plasma was generated between a glass substrate having a thickness of 0.5 mm and a thickness of 0.5 mm and the target to form an Ag alloy reflective film having a thickness of 100 nm.

【0024】このようにして形成した各Ag合金反射膜
の成膜直後の反射率を分光光度計により測定した。その
後、形成した各Ag合金反射膜を温度:80℃、相対湿
度:85%の恒温恒室槽にて200時間保持したのち、
再度同じ条件で反射率を測定した。得られた反射率デー
タから、波長:400nmおよび650nmにおける各
反射率を求め、その結果を表4〜6に示して光記録媒体
の反射膜として記録再生耐性を評価した。
The reflectance of each Ag alloy reflective film thus formed immediately after the film formation was measured by a spectrophotometer. After that, each formed Ag alloy reflective film was kept in a constant temperature and temperature chamber at a temperature of 80 ° C. and a relative humidity of 85% for 200 hours.
The reflectance was measured again under the same conditions. From the obtained reflectance data, the reflectances at wavelengths of 400 nm and 650 nm were determined, and the results are shown in Tables 4 to 6 to evaluate the recording / reproducing durability as a reflective film of an optical recording medium.

【0025】[0025]

【表4】 [Table 4]

【0026】[0026]

【表5】 [Table 5]

【0027】[0027]

【表6】 [Table 6]

【0028】表4〜6に示される結果から、この発明の
本発明ターゲット28〜52を用いてスパッタリングを
行うことにより得られた反射層は、表1に示される従来
ターゲット1〜2を用いてスパッタリングを行うことに
より得られた反射層に比べて、温度:80℃、相対湿度:
85%の恒温恒室槽にて200時間保持後の反射率の低
下が少ないことがわかる。しかし、比較ターゲット8〜
13に見られるように、Dy,La,Nd,Tbおよび
Gdの合計が3質量%より多く含有すると、圧延中に割
れが発生するなどして成形できなくなることが分かる。
From the results shown in Tables 4 to 6, the reflective layers obtained by performing the sputtering using the targets 28 to 52 of the present invention were obtained by using the conventional targets 1 and 2 shown in Table 1. Compared with the reflective layer obtained by sputtering, temperature: 80 ° C., relative humidity:
It can be seen that there is little decrease in reflectance after 200 hours of holding in an 85% constant temperature constant temperature chamber. However, comparison target 8 ~
As can be seen from No. 13, when the total content of Dy, La, Nd, Tb and Gd is more than 3% by mass, cracking occurs during rolling and it becomes impossible to form.

【0029】実施例4 実施例1で用意した実施例1で用意したCuおよびNi
を含むCuの母合金、実施例2で用意したCa,Beお
よびSiを含む母合金、並びに実施例3で用意したD
y,La,Nd,TbおよびGdを用いて表7に示され
る成分組成を有する本発明ターゲット53〜64を作製
し、これらターゲットについて実施例1と同様にしてガ
ラス基板表面に厚さ:100nmのAg合金反射膜を形
成し、各Ag合金反射膜の成膜直後の反射率を分光光度
計により測定した。その後、形成した各Ag合金反射膜
を温度:80℃、相対湿度:85%の恒温恒室槽にて2
00時間保持したのち、再度同じ条件で反射率を測定し
た。得られた反射率データから、波長:400nmおよび
650nmにおける各反射率を求め、その結果を表7に
示して光記録媒体の反射膜として記録再生耐性を評価し
た。
Example 4 Cu and Ni prepared in Example 1 prepared in Example 1
A Cu master alloy containing Si, a master alloy containing Ca, Be and Si prepared in Example 2, and D prepared in Example 3
Using y, La, Nd, Tb and Gd, targets 53 to 64 of the present invention having the component composition shown in Table 7 were prepared, and these targets were formed on the surface of the glass substrate in the same manner as in Example 1 to have a thickness of 100 nm. An Ag alloy reflective film was formed, and the reflectance immediately after the formation of each Ag alloy reflective film was measured by a spectrophotometer. After that, each formed Ag alloy reflective film was placed in a thermostat chamber at a temperature of 80 ° C. and a relative humidity of 85%.
After holding for 00 hours, the reflectance was measured again under the same conditions. From the obtained reflectance data, the reflectances at wavelengths of 400 nm and 650 nm were obtained, and the results are shown in Table 7 to evaluate the recording / reproducing durability as a reflective film of an optical recording medium.

【0030】[0030]

【表7】 [Table 7]

【0031】表7に示される結果から、この発明の本発
明ターゲット53〜64を用いてスパッタリングを行う
ことにより得られた反射層は表1の従来ターゲット1〜
2を用いてスパッタリングを行うことにより得られた反
射層に比べて、波長:400nmおよび650nmにお
ける温度:80℃、相対湿度:85%の恒温恒室槽にて
200時間保持後の反射率の低下が少ないことがわか
る。
From the results shown in Table 7, the reflective layers obtained by carrying out the sputtering using the targets 53 to 64 of the present invention are the conventional targets 1 to 1 shown in Table 1.
Compared with the reflective layer obtained by performing the sputtering using No. 2, the reflectance at the wavelengths of 400 nm and 650 nm: 80 ° C., the relative humidity: 85%, and the reflectance decreases after 200 hours in a thermostatic chamber. It turns out that there are few.

【0032】[0032]

【発明の効果】上述のように、この発明の光記録媒体の
反射層形成用銀合金スパッタリングターゲットを用いて
作製した反射層は、従来の光記録媒体の反射層形成用銀
合金スパッタリングターゲットを用いて作製した反射層
に比べて、経時変化による反射率の低下が少なく、長期に
わたって使用できる光記録媒体を製造することができ、
メディア産業の発展に大いに貢献し得るものである。
As described above, the reflective layer produced by using the silver alloy sputtering target for forming the reflective layer of the optical recording medium of the present invention uses the conventional silver alloy sputtering target for forming the reflective layer of the optical recording medium. Compared with the reflective layer prepared by the above, there is less decrease in reflectance due to aging, and it is possible to manufacture an optical recording medium that can be used for a long period of time.
It can greatly contribute to the development of the media industry.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】Cu:0.5〜5質量%、Ni:0.05
〜2質量%を含有し、残部がAgである組成の銀合金か
らなることを特徴とする光記録媒体の反射層形成用銀合
金スパッタリングターゲット。
1. Cu: 0.5 to 5 mass%, Ni: 0.05
A silver alloy sputtering target for forming a reflection layer of an optical recording medium, characterized in that the silver alloy sputtering target contains ˜2% by mass and the balance is Ag.
【請求項2】Cu:0.5〜5質量%、Ni:0.05
〜2質量%を含有し、さらにCa,Be,Siから選ば
れる1種または2種以上の合計:0.005〜0.05
質量%を含有し、残部がAgである組成の銀合金からな
ることを特徴とする光記録媒体の反射層形成用銀合金ス
パッタリングターゲット。
2. Cu: 0.5-5% by mass, Ni: 0.05
To 2% by mass, and one or more kinds selected from Ca, Be, and Si in total: 0.005 to 0.05
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is made of a silver alloy having a composition containing mass% and the balance being Ag.
【請求項3】Cu:0.5〜5質量%、Ni:0.05
〜2質量%を含有し、さらにDy,La,Nd,Tb,
Gdから選ばれる1種または2種以上の合計:0.1〜
3質量%を含有し、残部がAgである組成の銀合金から
なることを特徴とする光記録媒体の反射層形成用銀合金
スパッタリングターゲット。
3. Cu: 0.5-5% by mass, Ni: 0.05
˜2% by mass, further containing Dy, La, Nd, Tb,
Total of one or more selected from Gd: 0.1
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which comprises a silver alloy having a composition containing 3 mass% and the balance being Ag.
【請求項4】Cu:0.5〜5質量%、Ni:0.05
〜2質量%を含有し、さらにCa,Be,Siから選ば
れる1種または2種以上の合計:0.005〜0.05
質量%を含有し、さらにDy,La,Nd,Tb,Gd
から選ばれる1種または2種以上の合計:0.1〜3質
量%を含有し、残部がAgである組成の銀合金からなる
ことを特徴とする光記録媒体の反射層形成用銀合金スパ
ッタリングターゲット。
4. Cu: 0.5-5% by mass, Ni: 0.05
To 2% by mass, and one or more kinds selected from Ca, Be, and Si in total: 0.005 to 0.05
%, Dy, La, Nd, Tb, Gd
A silver alloy sputtering for forming a reflective layer of an optical recording medium, characterized in that it comprises a silver alloy having a composition of one or two or more selected from 0.1 to 3 mass% and the balance being Ag. target.
【請求項5】請求項1、2、3または4記載の銀合金ス
パッタリングターゲットを用いて作製した光記録媒体の
反射層。
5. A reflective layer of an optical recording medium produced by using the silver alloy sputtering target according to claim 1.
JP2001352593A 2001-11-19 2001-11-19 Silver alloy sputtering target for reflection layer formation of optical recording media Expired - Fee Related JP3803864B2 (en)

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TW92113376A TWI314166B (en) 2001-11-19 2003-05-16 Silver alloy sputtering targe for forming reflective layer of optical recording medium

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004149861A (en) * 2002-10-31 2004-05-27 Hitachi Metals Ltd Ag ALLOY FILM, FLAT PANEL DISPLAY DEVICE AND SPUTTERING TARGET MATERIAL FOR Ag ALLOY FILM DEPOSITION
CN101787460A (en) * 2010-02-26 2010-07-28 上海集强金属工业有限公司 Silver-based alloy material and application thereof
CN106947879A (en) * 2017-04-11 2017-07-14 东北大学 For vacuum magnetic-control sputtering silver-base alloy target blank and its preparation method and application

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004149861A (en) * 2002-10-31 2004-05-27 Hitachi Metals Ltd Ag ALLOY FILM, FLAT PANEL DISPLAY DEVICE AND SPUTTERING TARGET MATERIAL FOR Ag ALLOY FILM DEPOSITION
CN101787460A (en) * 2010-02-26 2010-07-28 上海集强金属工业有限公司 Silver-based alloy material and application thereof
CN106947879A (en) * 2017-04-11 2017-07-14 东北大学 For vacuum magnetic-control sputtering silver-base alloy target blank and its preparation method and application

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