JP2003160827A - Silver-alloy sputtering target for forming reflective layer on optical recording medium - Google Patents

Silver-alloy sputtering target for forming reflective layer on optical recording medium

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Publication number
JP2003160827A
JP2003160827A JP2001358851A JP2001358851A JP2003160827A JP 2003160827 A JP2003160827 A JP 2003160827A JP 2001358851 A JP2001358851 A JP 2001358851A JP 2001358851 A JP2001358851 A JP 2001358851A JP 2003160827 A JP2003160827 A JP 2003160827A
Authority
JP
Japan
Prior art keywords
mass
reflective layer
alloy
optical recording
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001358851A
Other languages
Japanese (ja)
Inventor
Terushi Mishima
昭史 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
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Filing date
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Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2001358851A priority Critical patent/JP2003160827A/en
Publication of JP2003160827A publication Critical patent/JP2003160827A/en
Withdrawn legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silver-alloy sputtering target for forming a reflective layer on an optical recording medium such as optical recording disks (CD-RW and DVD-RAM). <P>SOLUTION: This sputtering target comprises (1) a silver alloy having a composition including 1-20 mass% Zn, further 0.005-0.05 mass% in total of one or more selected among Ca, Be, or Si, and the balance Ag, (2) a silver alloy having a composition including 1-20 mass% Zn, further 0.1-3 mass% in total of one or more selected among Dy, La, Nd, Tb, or Gd, and the balance Ag, or (3) a silver alloy having a composition including 1-20 mass% Sn, further 0.005-0.05 mass% in total of one or more selected among Ca, Be, and Si, further 0.1-3 mass% in total of one or more selected among Dy, La, Nd, Tb, or Gd, and the balance Ag. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、半導体レーザー
などのレーザービームを用いて音声、映像、文字などの情
報信号を再生あるいは記録・再生・消去を行う光記録デ
ィスク(CD−RW,DVD−RAM)などの光記録媒
体の構成層である半透明反射層または反射層(以下、両者
を含めて反射層と呼ぶ)をスパッタリング法にて形成す
るための銀合金スパッタリングターゲットに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical recording disk (CD-RW, DVD-RAM) for reproducing or recording / reproducing / erasing information signals such as audio, video and characters by using a laser beam such as a semiconductor laser. ) Etc. for forming a semitransparent reflective layer or a reflective layer (hereinafter, both are referred to as a reflective layer), which is a constituent layer of an optical recording medium, by a sputtering method.

【0002】[0002]

【従来の技術】従来、光記録ディスク(CD−RW,D
VD−RAM)などの光記録媒体の反射層としてAgま
たはAg合金反射層が使用されており、このAgまたは
Ag合金反射層は400〜830nmの幅広い波長域で
の反射率が高く、特に光記録媒体の高密度化記録に用い
られる短波長のレーザー光に対して反射率が大きいので
好適であるとされている。前記AgまたはAg合金反射
層の形成には、AgまたはAg−Zn合金からなるター
ゲットをスパッタすることにより形成されることが知ら
れている(特開2001−35014号公報参照)。
2. Description of the Related Art Conventionally, optical recording disks (CD-RW, D
An Ag or Ag alloy reflective layer is used as a reflective layer of an optical recording medium such as a VD-RAM), and this Ag or Ag alloy reflective layer has a high reflectance in a wide wavelength range of 400 to 830 nm, and particularly optical recording. It is said that it is suitable because it has a large reflectance with respect to a laser beam having a short wavelength used for high density recording of a medium. It is known that the Ag or Ag alloy reflective layer is formed by sputtering a target made of Ag or Ag-Zn alloy (see JP 2001-35014 A).

【0003】[0003]

【発明が解決しようとする課題】しかし、光記録媒体の
中でも記録層に相変化記録材料を用い、繰り返し記録・
再生・消去を行う光記録媒体においては、記録・再生・
消去の繰り返し回数が増大するにつれて、AgまたはA
g−Zn合金反射層の反射率が低下し、長期に亘る十分
な記録再生耐性が得られなかった。この原因の一つとし
て光記録媒体に繰り返し記録・再生・消去を行うと、レ
ーザー光の照射によりAg反射層の加熱冷却が繰り返さ
れ、それによってAg反射層が再結晶化し、結晶粒が粗
大化することによって反射率が低下することを突き止め
た。
However, even in an optical recording medium, a phase change recording material is used for the recording layer, and repeated recording / recording is performed.
In the case of an optical recording medium that reproduces and erases,
As the number of repetitions of erasing increases, Ag or A
The reflectivity of the g-Zn alloy reflective layer was lowered, and sufficient recording / reproduction durability could not be obtained for a long period of time. As one of the causes of this, when recording / reproducing / erasing is repeatedly performed on the optical recording medium, the Ag reflecting layer is repeatedly heated and cooled by the irradiation of the laser beam, whereby the Ag reflecting layer is recrystallized and the crystal grains become coarse. By doing so, it was found that the reflectance decreases.

【0004】[0004]

【課題を解決するための手段】そこで本発明者らは、記
録・再生・消去の繰り返し回数が増大しても反射層の反
射率が低下することの少ないAg合金反射層を得るべく
研究を行った。その結果、 (イ)AgにZn:1〜20質量%を添加したAg−Z
n合金にCa,Be,Siから選ばれる1種または2種
以上の合計:0.005〜0.05質量%を含有せしめ
た組成の銀合金ターゲットを用いてスパッタリングする
ことにより得られた銀合金反射層は、従来のAgまたは
Ag−Zn合金からなるターゲットを用いてスパッタす
ることにより得られた銀または銀合金反射層に比べて、
レーザービームの繰り返し照射に伴う繰り返し加熱冷却
を受けても結晶粒が粗大化することが少なく、したがっ
て、長期間使用しても反射率の低下が極めて少ない、
(ロ)AgにZn:1〜20質量%を添加したAg−Z
n合金にDy,La,Nd,Tb,Gdから選ばれる1
種または2種以上の合計:0.1〜3質量%を含有させ
た組成の銀合金ターゲットを用いてスパッタリングする
ことにより得られた銀合金反射層は、従来のAgまたは
Ag−Zn合金からなるターゲットを用いてスパッタす
ることにより得られた銀または銀合金反射層に比べて、
レーザービームの繰り返し照射に伴う繰り返し加熱冷却
を受けても結晶粒が粗大化することが少なく、したがっ
て、長期間使用しても反射率の低下が極めて少ない、
(ハ)AgにZn:1〜20質量%を添加したAg−Z
n合金に、さらにCa,Be,Siから選ばれる1種ま
たは2種以上の合計:0.005〜0.05質量%とD
y,La,Nd,Tb,Gdから選ばれる1種または2
種以上の合計:0.1〜3質量%とを共に含有せしめた
銀合金ターゲットを用いてスパッタリングすることによ
り得られた銀合金反射層でも同じ効果が得られる、とい
う研究結果が得られたのである。
Therefore, the present inventors have conducted research to obtain an Ag alloy reflective layer in which the reflectance of the reflective layer is less likely to decrease even if the number of recording / reproducing / erasing is increased. It was As a result, (a) Ag-Z in which Zn: 1 to 20 mass% was added to Ag
Silver alloy obtained by sputtering using a silver alloy target having a composition in which n alloy contains one or more kinds selected from Ca, Be, and Si in total: 0.005 to 0.05 mass% The reflective layer is different from the conventional silver or silver alloy reflective layer obtained by sputtering using a target made of Ag or Ag-Zn alloy,
Even if it is repeatedly heated and cooled due to the repeated irradiation of the laser beam, the crystal grains are rarely coarsened, and therefore, the reflectance is hardly reduced even if it is used for a long period of time.
(B) Ag-Z in which Zn: 1 to 20 mass% is added to Ag
n alloy selected from Dy, La, Nd, Tb, Gd 1
Or a total of two or more kinds: a silver alloy reflective layer obtained by sputtering using a silver alloy target having a composition containing 0.1 to 3 mass% is made of a conventional Ag or Ag-Zn alloy. Compared to the silver or silver alloy reflective layer obtained by sputtering using a target,
Even if it is repeatedly heated and cooled due to repeated irradiation of the laser beam, the crystal grains are rarely coarsened, so that there is very little decrease in reflectance even after long-term use.
(C) Ag-Z in which Zn: 1 to 20 mass% is added to Ag
n alloy, and a total of one or more selected from Ca, Be and Si: 0.005 to 0.05 mass% and D
1 or 2 selected from y, La, Nd, Tb and Gd
Since the research results have been obtained, the same effect can be obtained with a silver alloy reflection layer obtained by sputtering using a silver alloy target containing a total of at least one species: 0.1 to 3% by mass. is there.

【0005】この発明は、かかる研究結果に基づいて成
されたものであって、(1)Zn:1〜20質量%を含
有し、さらにCa,Be,Siから選ばれる1種または
2種以上の合計:0.005〜0.05質量%を含有
し、残部がAgである組成の銀合金からなる光記録媒体
の反射層形成用銀合金スパッタリングターゲット、
(2)Zn:1〜20質量%を含有し、さらにDy,L
a,Nd,Tb,Gdから選ばれる1種または2種以上
の合計:0.1〜3質量%を含有し、残部がAgである
組成の銀合金からなる光記録媒体の反射層形成用銀合金
スパッタリングターゲット、(3)Zn:1〜20質量
%を含有し、さらにCa,Be,Siから選ばれる1種
または2種以上の合計:0.005〜0.05質量%を
含有し、さらにDy,La,Nd,Tb,Gdから選ば
れる1種または2種以上の合計:0.1〜3質量%を含
有し、残部がAgである組成の銀合金からなる光記録媒
体の反射層形成用銀合金スパッタリングターゲット、に
特徴を有するものである。
The present invention was made on the basis of the results of such research, and contains (1) Zn: 1 to 20 mass%, and one or more kinds selected from Ca, Be and Si. A total of 0.005 to 0.05 mass% and the balance is Ag alloy sputtering target for forming a reflective layer of an optical recording medium, which is made of a silver alloy having a composition of Ag,
(2) Containing Zn: 1 to 20% by mass, and further containing Dy, L
Silver for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having a composition of 0.1 to 3 mass% and one or two or more kinds selected from a, Nd, Tb, and Gd, the balance being Ag. Alloy sputtering target, (3) Zn: containing 1 to 20 mass%, further containing one or more kinds selected from Ca, Be, Si: 0.005 to 0.05 mass%, and Dy, La, Nd, Tb, Gd, 1 type or 2 types or more of total: 0.1-3 mass% is contained, and the balance forms the reflection layer of the optical recording medium which consists of a silver alloy of the composition which is Ag. The silver alloy sputtering target for use is characterized.

【0006】この発明の銀合金反射層を形成するための
スパッタリングターゲットは、原料として純度:99.
99質量%以上の高純度Ag、並びに純度:99.9質
量%以上のZn、Dy,La,Nd,TbおよびGdを
用意し、これら原料を高真空または不活性ガス雰囲気中
で溶解し、得られた溶湯を真空または不活性ガス雰囲気
中で鋳造してインゴットを作製し、これらインゴットを
熱間加工したのち機械加工することにより製造すること
ができる。
The sputtering target for forming the silver alloy reflective layer of the present invention has a purity of 99.
99% by mass or more of high purity Ag and 99.9% by mass or more of purity of Zn, Dy, La, Nd, Tb and Gd are prepared, and these raw materials are dissolved in a high vacuum or an inert gas atmosphere to obtain It can be manufactured by casting the obtained molten metal in a vacuum or an inert gas atmosphere to produce an ingot, hot working these ingots, and then machining them.

【0007】Agへの固溶が殆どないCa,Beおよび
Siについては、それぞれの各元素の濃度が0.20質
量%となるようにAgを配合した後、高周波真空溶解に
て溶解し、溶解後炉内圧力が大気圧となるまでArガス
を充填したのち黒鉛製鋳型に鋳造してCa,Beおよび
Siを含むAgの母合金を作製し、この母合金をZnと
ともにAgに添加して溶解し鋳造することによりインゴ
ットを作製し、得られたインゴットを熱間加工したのち
機械加工することにより製造することができる。
For Ca, Be and Si, which have almost no solid solution in Ag, Ag is blended so that the concentration of each element becomes 0.20% by mass, and then dissolved by high-frequency vacuum melting to dissolve. After filling Ar gas until the post-reactor pressure reaches atmospheric pressure, it is cast in a graphite mold to produce a master alloy of Ag containing Ca, Be and Si, and this master alloy is added to Ag together with Zn and melted. Then, an ingot can be produced by casting, and the obtained ingot can be manufactured by hot working and then mechanical working.

【0008】次に、この発明のAg合金からなる反射層
およびこのAg合金からなる反射層を形成するためのス
パッタリングターゲットにおける成分組成を前記の如く
限定した理由を説明する。
Next, the reason why the component composition in the reflective layer made of the Ag alloy of the present invention and the sputtering target for forming the reflective layer made of the Ag alloy is limited as described above will be explained.

【0009】Zn:Znは、Agに固溶して結晶粒の強
度を高め、結晶粒の再結晶粒化を防止し、スパッタにより
形成された反射層の反射率の低下を抑制する効果がある
が、Znを1質量%未満含んでも十分な結晶粒の再結晶
粒化を防止することができないので反射層の反射率の低
下を抑止することができず、一方、Znが20質量%を越
えて含有すると、スパッタにより形成されたAg合金反
射層の内部応力が大きくなり、ターゲットの製造時に結
晶粒内および/または結晶粒界に金属間化合物を形成
し、割れが生じやすくなるので好ましくない。したがっ
て、Ag合金反射層およびこのAg合金反射層を形成す
るためのスパッタリングターゲットに含まれるこれらZ
nの含有量は1〜20質量%(一層好ましくは5〜15
質量%)に定めた。
Zn: Zn has the effects of forming a solid solution with Ag to increase the strength of crystal grains, prevent recrystallization of crystal grains, and suppress a decrease in reflectance of the reflective layer formed by sputtering. However, even if Zn is contained in an amount of less than 1% by mass, it is not possible to prevent sufficient recrystallization of crystal grains, and therefore it is not possible to prevent a decrease in reflectance of the reflective layer, while Zn exceeds 20% by mass. If it is contained, the internal stress of the Ag alloy reflective layer formed by sputtering becomes large, and an intermetallic compound is formed in the crystal grains and / or in the crystal grain boundaries during the production of the target, and cracking is likely to occur, which is not preferable. Therefore, the Z alloy contained in the Ag alloy reflective layer and the sputtering target for forming this Ag alloy reflective layer is not included.
The content of n is 1 to 20% by mass (more preferably 5 to 15%).
Mass%).

【0010】Ca,Be,Si:これら成分は、Agに
殆ど固溶せず、結晶粒界に析出することにより結晶粒同
士の結合を防止し、Ag合金反射層の再結晶化防止をさ
らに促進する成分であるが、これら成分の1種または2
種以上を合計で0.005質量%未満含んでも格段の効
果が得られず、一方、これら成分の1種または2種以上を
合計で0.05質量%を越えて含有すると、ターゲット
が著しく硬化し、ターゲットの作製が困難になるので好
ましくない。したがって、Ag合金反射層およびこのA
g合金反射層を形成するためのスパッタリングターゲッ
トに含まれるこれら成分の含有量は0.005〜0.0
5質量%(一層好ましくは0.010〜0.035質量
%)に定めた。
Ca, Be, Si: These components hardly dissolve in Ag and precipitate at the crystal grain boundaries to prevent the crystal grains from binding to each other and further promote the prevention of recrystallization of the Ag alloy reflection layer. It is one of these ingredients or 2
Even if the total amount of the above components is less than 0.005% by mass, no remarkable effect can be obtained. On the other hand, if the total amount of one or more of these components exceeds 0.05% by mass, the target is significantly hardened. However, it is not preferable because it is difficult to manufacture the target. Therefore, the Ag alloy reflective layer and this A
The content of these components contained in the sputtering target for forming the g alloy reflection layer is 0.005 to 0.0.
It was set to 5% by mass (more preferably 0.010 to 0.035% by mass).

【0011】Dy,La,Nd,Tb,Gd:これら成
分は、Agとの反応により金属間化合物を結晶粒界に形
成して結晶粒同士の結合を防止し、Ag合金反射層の再
結晶化防止をさらに促進する成分であるが、これら成分
の内の1種または2種以上を合計で0.1質量%未満含
んでも格段の効果が得られず、一方、これら成分の1種ま
たは2種以上を合計で3質量%を越えて含有すると、タ
ーゲットが著しく硬化し、ターゲットの作製が困難にな
るので好ましくない。したがって、Ag合金反射層およ
びこのAg合金反射層を形成するためのスパッタリング
ターゲットに含まれるこれら成分の含有量は0.1〜3
質量%(一層好ましくは0.2〜1.5質量%)に定め
た。
Dy, La, Nd, Tb, Gd: These components form an intermetallic compound at the crystal grain boundary by reaction with Ag to prevent the crystal grains from binding to each other, and recrystallize the Ag alloy reflection layer. Although it is a component that further promotes prevention, even if the total content of one or more of these components is less than 0.1% by mass, no remarkable effect can be obtained. On the other hand, one or two of these components are not obtained. If the above total content exceeds 3% by mass, the target is significantly hardened and the target is difficult to manufacture, which is not preferable. Therefore, the content of these components contained in the Ag alloy reflective layer and the sputtering target for forming this Ag alloy reflective layer is 0.1 to 3.
The content is set to the mass% (more preferably 0.2 to 1.5 mass%).

【0012】[0012]

【発明の実施の形態】実施例1 原料として純度:99.99質量%以上の高純度Ag、
並びにいずれも純度:99.9質量%以上Zn、Ca、
BeおよびSiを用意した。Ca,BeおよびSiはA
gへの固溶が殆どないので、それぞれの各元素の濃度が
0.20質量%となるようにAgを配合した後、高周波真
空溶解炉にて溶解し、溶解後炉内圧力が大気圧となるま
でArガスを充填したのち黒鉛製鋳型に鋳造することに
より予めCa,BeおよびSiを含むAgの母合金を作
製した。この母合金をZnと共にAgに添加して溶解し
鋳造することによりインゴットを作製し、得られたイン
ゴットを600℃、2時間加熱した後、圧延し、次いで機
械加工することにより直径:125mm、厚さ:5mm
の寸法を有し、表1〜2に示される成分組成を有する本
発明ターゲット1〜18、比較ターゲット1〜4および
従来ターゲット1〜2を製造した。
BEST MODE FOR CARRYING OUT THE INVENTION Example 1 Purity as raw material: high purity Ag of 99.99 mass% or more,
Also, all of them have a purity of 99.9% by mass or more, Zn, Ca,
Be and Si were prepared. Ca, Be and Si are A
Since there is almost no solid solution in g, Ag is blended so that the concentration of each element is 0.20% by mass, and then it is melted in a high frequency vacuum melting furnace, and the pressure in the furnace after melting is atmospheric pressure. A mother alloy of Ag containing Ca, Be and Si was prepared in advance by filling Ar gas until it was filled and then casting in a graphite mold. This mother alloy was added to Ag together with Zn and melted and cast to form an ingot. The obtained ingot was heated at 600 ° C. for 2 hours, rolled, and then machined to have a diameter of 125 mm and a thickness of 125 mm. Length: 5 mm
Inventive targets 1 to 18, comparative targets 1 to 4 and conventional targets 1 and 2 having the dimensions of No. 1 and the composition shown in Tables 1 and 2 were produced.

【0013】これら本発明ターゲット1〜9、比較ター
ゲット1〜4および従来ターゲット1〜2をそれぞれ無
酸素銅製のバッキングプレートにはんだ付けし、これを
直流マグネトロンスパッタ装置に装着し、真空排気装置
にて直流マグネトロンスパッタ装置内を1×10-4Pa
まで排気した後、Arガスを導入して1.0Paのスパ
ッタガス圧とし、続いて直流電源にてターゲットに10
0Wの直流スパッタ電力を印加し、前記ターゲットに対
抗しかつ70mmの間隔を設けてターゲットと平行に配
置した直径:30mm、厚さ:0.5mmのガラス基板
と前記ターゲットの間にプラズマを発生させ、厚さ:1
00nmのAgおよびAg合金反射膜を形成した。
The targets 1 to 9 of the present invention, the comparative targets 1 to 4 and the conventional targets 1 and 2 are each soldered to a backing plate made of oxygen-free copper, mounted on a DC magnetron sputtering apparatus, and then evacuated by a vacuum exhaust apparatus. 1 × 10 -4 Pa inside the DC magnetron sputtering system
After evacuation to Ar gas, Ar gas is introduced to obtain a sputtering gas pressure of 1.0 Pa, and then the target is 10
A direct current sputtering power of 0 W was applied to generate plasma between the target and a glass substrate having a diameter of 30 mm and a thickness of 0.5 mm, which was placed in parallel with the target at a distance of 70 mm, facing the target. , Thickness: 1
A 00 nm Ag and Ag alloy reflective film was formed.

【0014】このようにして形成したAgおよびAg合
金反射膜の成膜直後の反射率を分光光度計により測定し
た。その後、形成したAgおよびAg合金反射膜を温
度:80℃、相対湿度:85%の恒温恒湿槽にて200
時間保持したのち、再度同じ条件で反射率を測定した。
得られた反射率データから、波長:400nmおよび6
50nmにおける各反射率を求め、その結果を表1〜2
に示して光記録媒体の反射膜として記録再生耐性を評価
した。
The reflectance of the Ag and Ag alloy reflective films thus formed immediately after the film formation was measured by a spectrophotometer. After that, the formed Ag and Ag alloy reflective film is heated to a temperature of 80 ° C. and a relative humidity of 85% in a thermo-hygrostat at 200.
After holding for a time, the reflectance was measured again under the same conditions.
From the obtained reflectance data, wavelengths: 400 nm and 6
Each reflectance at 50 nm was obtained, and the results are shown in Tables 1-2.
The recording and reproducing resistance was evaluated as a reflective film of the optical recording medium as shown in FIG.

【0015】[0015]

【表1】 [Table 1]

【0016】[0016]

【表2】 [Table 2]

【0017】表1〜2に示される結果から、この発明の
本発明ターゲット1〜18を用いてスパッタリングを行
うことにより得られた反射層は、従来ターゲット1〜2
を用いてスパッタリングを行うことにより得られた反射
層に比べて、温度:80℃、相対湿度:85%の恒温恒湿
槽にて200時間保持後の反射率の低下が少ないことが
わかる。しかし、この発明の範囲から外れてZn、C
a,BeおよびSiを多く含む比較ターゲット1〜4
は、割れが発生したり、硬くなって成形できなくなるこ
とが分かる。
From the results shown in Tables 1 and 2, the reflective layers obtained by performing the sputtering using the targets 1 to 18 of the present invention are conventional targets 1 to 2.
It can be seen that, as compared with the reflective layer obtained by performing the sputtering using, the decrease in reflectance after 200 hours of holding in a thermo-hygrostat at a temperature of 80 ° C. and a relative humidity of 85% was less. However, Zn, C are out of the scope of the present invention.
Comparative targets 1 to 4 containing a large amount of a, Be and Si
It can be seen that in the case of, cracking occurs or the material becomes hard and cannot be molded.

【0018】実施例2 原料として純度:99.99質量%以上の高純度Ag並
びに純度:99.9質量%以上のZn、Dy,La,N
d,TbおよびGdを用意し、これら原料を高周波真空
溶解炉で溶解し、得られた溶湯をArガス雰囲気中で黒
鉛鋳型に鋳造してインゴットを作製し、得られたインゴ
ットを600℃、2時間加熱した後、圧延し、次いで機械
加工することにより直径:125mm、厚さ:5mmの
寸法を有し、表3〜5に示される成分組成を有する本発
明ターゲット19〜43および比較ターゲット5〜10
を製造した。
Example 2 As a raw material, high-purity Ag having a purity of 99.99 mass% or more and Zn, Dy, La, N having a purity of 99.9 mass% or more.
d, Tb, and Gd were prepared, these raw materials were melted in a high-frequency vacuum melting furnace, and the resulting melt was cast in a graphite mold in an Ar gas atmosphere to prepare an ingot. The targets 19 to 43 of the present invention and the comparative targets 5 to 5 having dimensions of diameter: 125 mm, thickness: 5 mm and having the component compositions shown in Tables 3 to 5 by heating for a time, rolling and then machining. 10
Was manufactured.

【0019】これら本発明ターゲット19〜43および
較ターゲット5〜10をそれぞれ無酸素銅製のバッキン
グプレートにはんだ付けし、これを直流マグネトロンス
パッタ装置に装着し、真空排気装置にて直流マグネトロ
ンスパッタ装置内を1×10- 4Paまで排気した後、A
rガスを導入して1.0Paのスパッタガス圧とし、続
いて直流電源にてターゲットに100Wの直流スパッタ
電力を印加し、前記ターゲットに対抗しかつ70mmの
間隔を設けてターゲットと平行に配置した直径:30m
m、厚さ:0.5mmのガラス基板と前記ターゲットの
間にプラズマを発生させ、厚さ:100nmのAg合金
反射膜を形成した。
Each of the targets 19 to 43 of the present invention and the targets 5 to 10 of the present invention is soldered to a backing plate made of oxygen-free copper, mounted on a DC magnetron sputtering device, and the inside of the DC magnetron sputtering device is vacuum exhausted. 1 × 10 - 4 was evacuated to Pa, A
Introducing r gas to adjust the sputtering gas pressure to 1.0 Pa, and subsequently applying DC sputtering power of 100 W to the target with a DC power source, the target was opposed to the target, and the target was placed in parallel with the target with an interval of 70 mm. Diameter: 30m
Plasma was generated between a glass substrate having a thickness of 0.5 mm and a thickness of 0.5 mm and the target to form an Ag alloy reflective film having a thickness of 100 nm.

【0020】このようにして形成した各Ag合金反射膜
の成膜直後の反射率を分光光度計により測定した。その
後、形成した各Ag合金反射膜を温度:80℃、相対湿
度:85%の恒温恒湿槽にて200時間保持したのち、
再度同じ条件で反射率を測定した。得られた反射率デー
タから、波長:400nmおよび650nmにおける各
反射率を求め、その結果を表3〜5に示して光記録媒体
の反射膜として記録再生耐性を評価した。
The reflectance of each Ag alloy reflective film thus formed immediately after the film formation was measured by a spectrophotometer. After that, each formed Ag alloy reflective film was kept in a thermo-hygrostat at a temperature of 80 ° C. and a relative humidity of 85% for 200 hours.
The reflectance was measured again under the same conditions. Each reflectance at wavelengths of 400 nm and 650 nm was determined from the obtained reflectance data, and the results are shown in Tables 3 to 5 to evaluate the recording / reproducing durability as a reflective film of an optical recording medium.

【0021】[0021]

【表3】 [Table 3]

【0022】[0022]

【表4】 [Table 4]

【0023】[0023]

【表5】 [Table 5]

【0024】表3〜5に示される結果から、この発明の
本発明ターゲット19〜43を用いてスパッタリングを
行うことにより得られた反射層は、表2に示される従来
ターゲット1〜2を用いてスパッタリングを行うことに
より得られた反射層に比べて、温度:80℃、相対湿度:
85%の恒温恒湿槽にて200時間保持後の反射率の低
下が少ないことがわかる。しかし、比較ターゲット5〜
10に見られるように、Dy,La,Nd,Tbおよび
Gdの合計が3質量%より多く含有すると、圧延中に割
れが発生するなどして成形できなくなることが分かる。
From the results shown in Tables 3 to 5, the reflective layer obtained by performing the sputtering using the targets 19 to 43 of the present invention was obtained by using the conventional targets 1 and 2 shown in Table 2. Compared with the reflective layer obtained by sputtering, temperature: 80 ° C., relative humidity:
It can be seen that there is little decrease in reflectance after 200 hours of holding in an 85% constant temperature and humidity chamber. However, comparison target 5
As can be seen from No. 10, when the total content of Dy, La, Nd, Tb and Gd is more than 3% by mass, cracking occurs during rolling and molding cannot be performed.

【0025】実施例3 実施例1で用意した高純度AgとZn、Ca,Beおよ
びSiを含むAgの母合金、並びに実施例2で用意した
Dy,La,Nd,TbおよびGdを用いて表6に示さ
れる成分組成を有する本発明ターゲット44〜55を作
製し、これらターゲットについて実施例1と同様にして
ガラス基板表面に厚さ:100nmのAg合金反射膜を
形成し、各Ag合金反射膜の成膜直後の反射率を分光光
度計により測定した。その後、形成した各Ag合金反射
膜を温度:80℃、相対湿度:85%の恒温恒湿槽にて
200時間保持したのち、再度同じ条件で反射率を測定
した。得られた反射率データから、波長:400nmおよ
び650nmにおける各反射率を求め、その結果を表6
に示して光記録媒体の反射膜として記録再生耐性を評価
した。
Example 3 A table using the high purity Ag and the mother alloy of Ag containing Zn, Ca, Be and Si prepared in Example 1 and Dy, La, Nd, Tb and Gd prepared in Example 2 Targets 44 to 55 of the present invention having the component composition shown in No. 6 were produced, and Ag alloy reflection films with a thickness of 100 nm were formed on the glass substrate surface for these targets in the same manner as in Example 1, and each Ag alloy reflection film was formed. The reflectance immediately after the film formation was measured with a spectrophotometer. After that, each formed Ag alloy reflective film was kept in a thermo-hygrostat at a temperature of 80 ° C. and a relative humidity of 85% for 200 hours, and then the reflectance was measured again under the same conditions. From the obtained reflectance data, the reflectances at wavelengths of 400 nm and 650 nm were determined, and the results are shown in Table 6.
The recording and reproducing resistance was evaluated as a reflective film of the optical recording medium as shown in FIG.

【0026】[0026]

【表6】 [Table 6]

【0027】表6に示される結果から、この発明の本発
明ターゲット44〜55を用いてスパッタリングを行う
ことにより得られた反射層は表2の従来ターゲット1〜
2を用いてスパッタリングを行うことにより得られた反
射層に比べて、波長:400nmおよび650nmにお
ける温度:80℃、相対湿度:85%の恒温恒湿槽にて
200時間保持後の反射率の低下が少ないことがわか
る。
From the results shown in Table 6, the reflective layers obtained by sputtering using the targets 44 to 55 of the present invention are the conventional targets 1 to 1 shown in Table 2.
Compared with the reflective layer obtained by performing the sputtering using No. 2, the reflectance at the wavelengths: 400 nm and 650 nm: 80 ° C. and the relative humidity: 85% after being kept in a constant temperature and humidity chamber for 200 hours, the decrease in the reflectance. It turns out that there are few.

【0028】[0028]

【発明の効果】上述のように、この発明の光記録媒体の
反射層形成用銀合金スパッタリングターゲットを用いて
作製した反射層は、従来の光記録媒体の反射層形成用銀
合金スパッタリングターゲットを用いて作製した反射層
に比べて、経時変化による反射率の低下が少なく、長期に
わたって使用できる光記録媒体を製造することができ、
メディア産業の発展に大いに貢献し得るものである。
As described above, the reflective layer produced by using the silver alloy sputtering target for forming the reflective layer of the optical recording medium of the present invention uses the conventional silver alloy sputtering target for forming the reflective layer of the optical recording medium. Compared with the reflective layer prepared by the above, there is less decrease in reflectance due to aging, and it is possible to manufacture an optical recording medium that can be used for a long period of time.
It can greatly contribute to the development of the media industry.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】Zn:1〜20質量%を含有し、さらにC
a,Be,Siから選ばれる1種または2種以上の合
計:0.005〜0.05質量%を含有し、残部がAg
である組成の銀合金からなることを特徴とする光記録媒
体の反射層形成用銀合金スパッタリングターゲット。
1. Zn: 1 to 20% by mass, and further C
a, Be, Si, or a total of one or more selected from: 0.005 to 0.05% by mass, with the balance being Ag.
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having the composition
【請求項2】Zn:1〜20質量%を含有し、さらにD
y,La,Nd,Tb,Gdから選ばれる1種または2
種以上の合計:0.1〜3質量%を含有し、残部がAg
である組成の銀合金からなることを特徴とする光記録媒
体の反射層形成用銀合金スパッタリングターゲット。
2. Zn: 1 to 20% by mass, and further D
1 or 2 selected from y, La, Nd, Tb and Gd
Total of seeds or more: 0.1 to 3 mass% is contained, and the balance is Ag
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having the composition
【請求項3】Zn:1〜20質量%を含有し、さらにC
a,Be,Siから選ばれる1種または2種以上の合
計:0.005〜0.05質量%を含有し、さらにD
y,La,Nd,Tb,Gdから選ばれる1種または2
種以上の合計:0.1〜3質量%を含有し、残部がAg
である組成の銀合金からなることを特徴とする光記録媒
体の反射層形成用銀合金スパッタリングターゲット。
3. Zn: 1-20 mass% is contained, and further C
a, Be, Si, and a total of one or more selected from: 0.005 to 0.05 mass% and further D
1 or 2 selected from y, La, Nd, Tb and Gd
Total of seeds or more: 0.1 to 3 mass% is contained, and the balance is Ag
A silver alloy sputtering target for forming a reflective layer of an optical recording medium, which is composed of a silver alloy having the composition
【請求項4】請求項1、2または3記載の銀合金スパッ
タリングターゲットを用いて作製した光記録媒体の反射
層。
4. A reflective layer of an optical recording medium produced by using the silver alloy sputtering target according to claim 1.
JP2001358851A 2001-11-26 2001-11-26 Silver-alloy sputtering target for forming reflective layer on optical recording medium Withdrawn JP2003160827A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
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ID=19169959

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005056849A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy with excellent reflectance-maintaining characteristics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005056849A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy with excellent reflectance-maintaining characteristics

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