JP2003151970A - Substrate-processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve uniformity of film thickness by keeping the uniformity of temperature distribution within the plane of substrate due to the processing gas introduced in the substrate processing apparatus. SOLUTION: The substrate processing apparatus to perform the predetermined processes to a substrate 7, by supplying the processing gas thereto comprises a substrate-setting unit 4 for setting the substrate, a heat-generating unit 8 for heating the substrate, a processing gas inlet unit 21 for supplying the processing gas to the locations other than the main surface of substrate with the flow in a direction perpendicular to the main surface of substrate from the upper side of the main surface of substrate being set to the substrate setting unit, and a gas venting 15 for venting the introduced processing gas toward the external side of the substrate.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process for manufacturing an oxide film on a substrate to be processed such as a wafer, which is one of the processes for manufacturing a semiconductor device. The present invention relates to a substrate processing apparatus that performs substrate processing. 2. Description of the Related Art A conventional substrate processing apparatus will be described with reference to FIG. FIG. 6 shows a processing chamber of a single-wafer type substrate processing apparatus for processing one or several substrates at a time. [0004] The substrate processing container 1 is airtightly constituted by a container body 2 and a lid 3. The container body 2 accommodates a vertically movable substrate mounting portion 4, and the lid 3 has a ceiling surface. A gas dispersion plate 6 forming a gas reservoir 5 therebetween is provided so as to face the substrate mounting portion 4. The space between the gas dispersion plate 6 and the substrate mounting part 4 forms a processing space. A substrate 7 to be processed is placed on the upper surface of the substrate mounting portion 4, and a heating portion 8 such as a resistance heating element is provided inside the substrate mounting portion 4. A substrate push-up unit 9 is provided, which rises and lowers relative to the mounting unit 4. The substrate push-up unit 9 includes the heat generating unit 8 and push-up pins 12 that penetrate the substrate mounting table 11 of the substrate mounting unit 4. Have. The gas dispersion plate 6 has a large number of gas dispersion holes 13.
A gas supply system 14 communicates with the gas reservoir 5, and the gas supply system 14 is connected to a gas supply source (not shown) so as to supply gas to the gas reservoir 5. The supplied gas is dispersed from the gas reservoir 5 through the gas dispersion holes 13 and is uniformly introduced into the container body 2. An exhaust system 15 communicates with the container body 2, and the exhaust system 15 is connected to an exhaust device (not shown). The container body 2 is provided with a substrate loading / unloading port 16, which is opened and closed by a gate valve 17, and a substrate transport mechanism (not shown) is mounted on the substrate mounting table 11 through the substrate loading / unloading port 16. 7 is placed and paid out. The portion where the support portion 18 of the substrate mounting portion 4 penetrates the container body 2 is sealed by a bellows 19. The processing of the substrate 7 will be described. While the inside of the substrate processing container 1 is in a vacuum state, a substrate transport mechanism (not shown) places the substrate 7 on the substrate mounting table 11 through the substrate loading / unloading port 16. The mounting of the substrate 7 on the substrate mounting table 11 is as follows.
When the substrate mounting portion 4 is lowered, the push-up pins 1 are moved.
2 protrudes, and the substrate transport mechanism places the substrate 7 on the push-up pins 12. With the substrate transport mechanism retracted, the substrate mounting section 4 is raised, and the substrate 7 is moved to the substrate mounting table 11.
Placed on The gate valve 17 is connected to the substrate loading / unloading port 16.
Is hermetically closed, and an inert gas such as nitrogen gas is supplied from the gas supply system 14 and exhausted from the exhaust system 15. The pressure inside the substrate processing vessel 1 is adjusted to a predetermined pressure by a pressure control mechanism (not shown), and
Is heated to a predetermined temperature. With the substrate 7 heated to a predetermined temperature,
A processing gas corresponding to the substrate processing, such as oxygen, is switched from the gas supply system 14 to the inert gas and supplied. The processing gas uniformly flows out from the gas dispersion holes 13 through the gas reservoir 5 toward the entire surface of the substrate 7, flows along the surface of the substrate 7, and is exhausted from the exhaust system 15. The introduced gas is heated and reacts with the substrate 7 to form a predetermined film on the substrate 7, for example, an oxide film. When the predetermined time has elapsed and the substrate processing is completed, the supply of the processing gas is stopped, and the evacuation system 15 is evacuated.
Further, the heating by the heating unit 8 is stopped, and the substrate 7 is cooled to a predetermined temperature. Thereafter, the substrate mounting portion 4 is lowered, and the substrate transport mechanism discharges the substrate 7 from the substrate loading / unloading port 16 to the outside of the substrate processing container 1. A series of operations is repeated to process the substrate. In the above-described conventional substrate processing apparatus, the introduced gas is cold, is supplied toward the substrate 7, and flows along the surface of the substrate. Therefore, the substrate is cooled, and the in-plane temperature distribution of the substrate is deteriorated. Since the reaction state of the substrate is affected by the temperature, there is a problem that if the in-plane temperature distribution is deteriorated, the uniformity of the thickness of the oxide film or the like is deteriorated. In view of such circumstances, the present invention is to improve the uniformity of the film thickness so that the introduced processing gas does not impair the uniformity of the in-plane temperature distribution of the substrate. According to the present invention, there is provided a substrate processing apparatus for supplying a processing gas to a substrate and performing a required processing on the substrate. A heating section for heating the substrate, and a processing gas supplied to a position other than the substrate main surface by a flow in a direction perpendicular to the substrate main surface from above the substrate main surface of the substrate placed on the substrate mounting portion. The present invention relates to a substrate processing apparatus provided with a processing gas introduction unit for performing the process and a gas exhaust unit for exhausting the introduced processing gas so as to flow toward the outside of the substrate. Embodiments of the present invention will be described below with reference to the drawings. 1 and 2, the same components as those shown in FIG. 6 are denoted by the same reference numerals. The substrate processing container 1 is hermetically constituted by a container main body 2 and a lid 3, and the container main body 2 houses a vertically movable and rotatable substrate mounting portion 4. The space between the mounting section 4 and the mounting section 4 forms a processing space.
In the processing state, the substrate mounting table 11 and the lid 3 are in a state of being close to each other. A substrate 7 to be processed is placed on the upper surface of the substrate mounting portion 4, and a heating portion 8 such as a resistance heating element is provided inside the substrate mounting portion 4. A substrate push-up unit 9 is provided, which rises and lowers relative to the mounting unit 4. The substrate push-up unit 9 includes the heat generating unit 8 and push-up pins 12 that penetrate the substrate mounting table 11 of the substrate mounting unit 4. Have. The lower surface of the lid 3, that is, the substrate mounting table 1
An annular groove 21 is formed on the surface facing the first groove 1.
Is a place where the circumference is equally divided (four places in this embodiment)
Is provided with a gas introduction hole 22. The diameter of the groove 21 is substantially equal to or larger than the outer diameter of the substrate 7. A gas supply system 14 communicates with the gas introduction hole 22. The gas supply system 14 is further provided with a processing gas supply source or an inert gas supply source such as nitrogen gas (neither is shown). And a processing gas, a nitrogen gas or a plurality of gases can be mixed and supplied by a valve provided in the gas supply system 14. In addition, the gas supply system 1
4 is provided with a flow controller 23, and the substrate processing vessel 1
The flow rate of the gas introduced into the inside can be controlled. or,
An exhaust system 1 is provided at a plurality of positions (equal positions) of the container body 2.
The exhaust system 15 is connected to an exhaust device including a vacuum pump and the like (not shown). The exhaust system 15
Is provided with a pressure detector 24, which detects the pressure in the substrate processing container 1. The substrate mounting table 4 is provided in the substrate mounting section 4.
Power is supplied to the heat generating unit 8 that heats the substrate 7 via the heat generating unit 1 via a heat control unit 25. Although not shown, a temperature detector for detecting the temperature of the substrate mounting table 11 is provided. The temperature detector detects the temperature of the substrate mounting table 11, that is, the temperature of the substrate 7. The detection result is sent to the. The pressure in the substrate processing container 1 detected by the pressure detector 24 is input to a control unit 26, and the control unit 26
Controls the flow rate controller 23 so as to adjust the gas flow rate so that the pressure in the substrate processing vessel 1 becomes a target processing pressure.
The control unit 26 issues a heating command to the heat control unit 25 and commands a set temperature. The heat control unit 25 controls the heat generation unit 8 based on a temperature detection result from the temperature detector.
To control the power to adjust the calorific value. The container body 2 is provided with a substrate loading / unloading port 16, which is opened and closed by a gate valve 17, and a substrate transport mechanism (not shown) is mounted on the substrate mounting table 11 through the substrate loading / unloading port 16. 7 is placed and paid out. The portion where the support portion 18 of the substrate mounting portion 4 penetrates the container body 2 is sealed by a bellows 19. The processing of the substrate 7 will be described. While the inside of the substrate processing container 1 is in a vacuum state, a substrate transport mechanism (not shown) places the substrate 7 on the substrate mounting table 11 through the substrate loading / unloading port 16. The mounting of the substrate 7 on the substrate mounting table 11 is as follows.
When the substrate mounting portion 4 is lowered, the push-up pins 1 are moved.
2 protrudes, and the substrate transport mechanism places the substrate 7 on the push-up pins 12. With the substrate transport mechanism retracted, the substrate mounting section 4 is raised, and the substrate 7 is mounted on the substrate mounting table 11. In a state where the substrate 7 is placed,
The substrate mounting part 4 is rotated at a constant speed. The rotation of the substrate mounting portion 4 improves the uniformity of the substrate processing in the circumferential direction. The gate valve 17 is connected to the substrate loading / unloading port 16.
Is hermetically closed, and an inert gas such as nitrogen gas is supplied from the gas supply system 14 and exhausted from the exhaust system 15. The inside of the substrate processing container 1 includes the control unit 26 and the flow controller 2.
3. The pressure is adjusted to a predetermined pressure (negative pressure) by a pressure control mechanism such as a pressure detector 24, the substrate 7 is heated by the heat generating unit 8, and the temperature detector (not shown) and the heat control unit 25 are controlled.
The substrate 7 is controlled to be heated to a predetermined temperature by a temperature control mechanism such as described above. With the substrate 7 heated to a predetermined temperature,
The processing gas corresponding to the substrate processing, such as oxygen, is switched from the gas supply system 14 to the inert gas and the gas introduction hole 2
2. The processing gas may be a single gas or a different kind of gas may be supplied depending on the contents of the substrate processing. As a supply method when different types of gases are supplied, a mixed gas previously mixed at a predetermined ratio may be supplied to the gas introduction hole 22, or the gas controlled at a predetermined flow ratio may be individually supplied to the gas introduction hole 22. In some cases, the gas is supplied to the gas introduction hole 22. As the processing gas, nitrogen gas, oxygen gas,
A single gas of hydrogen gas, water vapor and NH3, or a mixed gas of two types is used. The processing gas introduced into the gas introduction hole 22 first expands in the groove 21 and flows along the groove 21.
Further, it diffuses throughout the substrate processing vessel 1. Further, since the gas is exhausted by the exhaust system 15, the entire gas flows vertically from the groove 21 toward the main surface of the substrate (the surface of the substrate to be processed), and further flows toward the exhaust system 15. Flowing. Further, as described above, since the exhaust system 15 communicates with a plurality of locations of the container body 2, the exhaust is exhausted from a uniform position around the substrate mounting portion 4. Therefore, the gas diffused from the groove 21 does not flow toward the center of the main surface of the substrate 7 but flows toward the periphery of the substrate mounting table 11.
As described above, the inside of the substrate processing container 1 has a negative pressure, and the processing gas is sufficiently supplied to the center of the substrate 7 by diffusion. The processing gas is supplied from a position other than the main surface of the substrate on the outer periphery of the substrate 7 and further flows toward the periphery of the substrate mounting portion 4, so that the processing gas introduced from the outside is directly applied to the substrate 7 The substrate 7 does not flow through the surface of the substrate 7 even after being introduced, so that the substrate 7 is not cooled by the processing gas. Therefore, the in-plane temperature of the substrate 7 is not affected by the introduction of the processing gas, and the uniformity of the film thickness is improved. The relationship between the groove 21 and the substrate 7 may be selected in accordance with the heating state of the substrate 7 by the heating section 8 and the processing contents of the substrate. That is, whether the diameter of the groove 21 is larger than the diameter of the substrate 7, substantially the same, or slightly smaller. In any case, the processing gas is introduced from the vicinity of the periphery of the substrate 7, and the reactive species necessary for the reaction are sufficiently supplied to the central portion of the substrate 7 by diffusion. When a predetermined time has elapsed and the substrate processing is completed, the supply of the processing gas is stopped, the evacuation system 15 is evacuated, the heating by the heating unit 8 is stopped, and the substrate 7 is cooled to a predetermined temperature. Let the temperature drop. Thereafter, the substrate mounting section 4 is lowered, and the substrate transport mechanism discharges the substrate 7 from the substrate loading / unloading port 16 to the outside of the substrate processing container 1. A series of operations is repeated to process the substrate. FIG. 3 shows a second embodiment in which an annular space 27 is formed inside the lid 3 and shower holes 28 communicating with the annular space 27 are provided on the same number of circumferences. The gas supply system 14 is provided at equal intervals at a plurality of locations, and is provided at equal intervals. The circumference where the shower holes 28 are provided is substantially equal to or larger than the diameter of the substrate 7. In this embodiment, the processing gas supplied from the gas supply system 14 is temporarily stored in the annular space 27 and is introduced through the shower hole 28. By providing the annular space 27, the gas supply system 1
Even if there are a plurality of holes 4, the processing gas is uniformly introduced from many shower holes 28. The processing gas introduced from the shower hole 28 spreads throughout the substrate processing vessel 1 by diffusion, and the entire gas flows from above the substrate main surface in a direction perpendicular to the substrate main surface. After being supplied to a position other than the substrate main surface, it flows toward the periphery of the substrate processing container 1. Accordingly, the processing gas can be supplied without cooling the substrate 7. FIG. 5 shows a third embodiment. In the third embodiment, the lower surface of the lid 3 and the substrate 7
A circular convex portion 31 is formed by projecting a region opposed to the above, and a donut-shaped groove 32 is formed around the convex portion 31. Gas introduction hole 2 to which the gas supply system 14 is connected
A plurality 2 are provided at equal intervals along the outer periphery of the convex portion 31. The lower surface of the convex portion 31 and the substrate mounting table 11
The processing gas supplied from the gas introduction holes 22 flows outward in the grooves 32 and further diffuses throughout the substrate processing container 1 (see FIG. 1). Also in the present embodiment, the processing gas flows into the gap between the projection 31 and the substrate 7 by diffusion, and the reactive species necessary for the reaction are sufficiently supplied. Further, the introduced processing gas does not flow directly on the surface of the substrate 7, especially on the main surface of the substrate to be processed, so that the substrate 7 is not cooled and affects the in-plane temperature distribution. Nothing. As described above, according to the present invention, in a substrate processing apparatus for supplying a processing gas to a substrate and performing required processing on the substrate, a substrate mounting portion for mounting the substrate thereon A heating unit for heating the substrate; and a processing gas at a position other than the substrate main surface by a flow in a direction perpendicular to the substrate main surface from above the substrate main surface of the substrate mounted on the substrate mounting unit. And a gas exhaust unit for exhausting the introduced processing gas so as to flow toward the outside of the substrate, so that the introduced processing gas makes the in-plane temperature distribution of the substrate uniform. It has excellent effects such as improved uniformity of film thickness, yield, and product quality without loss of properties.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic sectional view showing an embodiment of the present invention. FIG. 2 is a view as viewed in the direction of arrows AA in FIG. 1; FIG. 3 is a schematic sectional view showing a main part of a second embodiment of the present invention. FIG. 4 is a view taken in the direction of arrows BB in FIG. 3; FIG. 5 is a schematic sectional view showing a main part of a third embodiment of the present invention. FIG. 6 is a schematic sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1 Substrate processing container 2 Container main body 3 Lid 4 Substrate mounting part 7 Substrate 8 Heat generation part 9 Substrate lifting part 11 Substrate mounting base 14 Gas supply system 15 Exhaust system 21 Groove 22 Gas introduction hole 27 Annular space 28 shower hole 31 convex part 32 groove

Claims (1)

Claims: 1. A substrate processing apparatus for supplying a processing gas to a substrate and performing a required processing on the substrate, wherein a substrate mounting portion on which the substrate is mounted and a heat generator for heating the substrate. And a processing gas introduction unit for supplying a processing gas to a position other than the substrate main surface by a flow in a direction perpendicular to the substrate main surface from above the substrate main surface of the substrate mounted on the substrate mounting unit. And a gas exhaust unit for exhausting the introduced processing gas so as to flow outward of the substrate.