JP2011060812A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device that can uniformly heat a gas supply unit and shorten switching times of operations for gas supply, replacement, and discharge, etc. <P>SOLUTION: The substrate processing device that supplies a processing gas to a substrate 26 to perform predetermined processing on the substrate includes: a reaction container 8 comprising a container body 9 and a lid 11 for closing the container body from above; a substrate mounting part 16 where the substrate is mounted; a heating part 27 for heating the substrate; and the gas supply unit 2 for supplying the processing gas from above the reaction container, wherein a recessed part 17 is formed on an upper surface of the lid, the gas supply unit is stored in the recessed part, and the gas supply unit and lid are united together. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing required substrate processing such as generation of an oxide film, etching, and generation of a thin film on a substrate to be processed such as a wafer, which is one of manufacturing processes of a semiconductor device.

  The substrate processing apparatus includes a reaction furnace including a reaction vessel, a heating device, and the like. The substrate is stored in the reaction vessel, the substrate is heated to a predetermined temperature by the heating device, and a processing gas is supplied into the reaction vessel to perform the substrate processing. Do. The substrate processing apparatus includes a single-wafer type substrate processing apparatus that processes substrates one by one and a batch type substrate processing apparatus that processes a required number of substrates at a time.

  In a single wafer type substrate processing apparatus, a substrate (wafer) is horizontally mounted on a substrate mounting portion from a loading / unloading port formed in a reaction container, the substrate is heated by a heating device, and a processing gas is supplied to the reaction container. By being supplied to the inside, the substrate is processed while being placed on the substrate placing portion.

  In a conventional reactor, a gas supply switching valve is arranged in an integrated unit that is isolated at a location remote from the reactor, and in this case, the distance from the integrated unit to the reactor is There is a problem that the operation is not stable because it takes a long time for repeated operations such as supply, exhaust and replacement of the processing gas.

  In order to solve the above problems, high integration has recently progressed, and a gas supply unit 2 is disposed in the vicinity of the reaction furnace 1 as shown in FIG. It is generally performed to connect to a reaction furnace 1, vaporize a metal-based liquid material, and supply it to the reaction furnace 1 via the gas supply unit 2 and the supply pipe 3.

  The gas supply unit 2 mainly includes an air valve 4, a flow rate controller (MFC) 5, a pressure gauge, and the like, and the air valve 4 and the MFC 5 are connected by the supply pipe 3.

  The gas supply unit 2 is connected to a VENT pipe 6 for exhausting the gas in the supply pipe 3, and the upper surface of the reactor 1, the gas supply unit 2, the supply pipe 3, and the VENT. A block heater 7 is provided on the entire circumference of the pipe 6, and the gas supply unit 2, the supply pipe 3 and the VENT pipe 6 of the reaction furnace 1 are heated by the block heater 7, respectively. .

  When supplying a metal-based liquid material to the reactor 1, it is necessary to stably supply a gas, and the gas supply unit 2, the supply pipe 3, and the VENT pipe 6 are heated uniformly, When performing gas supply, replacement, and exhaust operations such as ALD processing and CVD processing in a film formation process, it is essential that the gas supply, replacement, and exhaust operations be stably switched. ing.

  However, in order to shorten the time required to switch the gas supply, replacement, and exhaust operation in the supply pipe 3, the supply pipe 3 is shortened and the gas supply unit 2 is fixed in the space immediately above the reactor 1. In this case, since the block heater 7 for heating is provided in the reaction furnace 1, the gas supply unit 2, the supply pipe 3, and the VENT pipe 6, respectively, the block heater 7 for heating the reaction furnace 1 is There was a problem that the supply pipe 3 interferes and the temperature of the supply gas varies.

  As a semiconductor device manufacturing apparatus having a liquid flow rate controller and a vaporizer and having a liquid material vaporization unit for introducing a carrier gas into the reaction chamber provided in the vicinity of the reaction chamber, a device disclosed in Patent Document 1 is disclosed. is there.

JP 2000-133644 A

  In view of such circumstances, the present invention provides a substrate processing apparatus capable of uniformly heating a gas supply unit and shortening the switching time of operations such as gas supply, replacement, and exhaust.

  The present invention relates to a substrate processing apparatus for supplying a processing gas to a substrate and performing a predetermined process on the substrate, and placing the substrate on the reaction container including a container main body and a lid for closing the container main body from above. A substrate mounting section, a heat generating section for heating the substrate, and a gas supply unit for supplying a processing gas from above the reaction vessel, and a recess is formed on the upper surface of the lid, The present invention relates to a substrate processing apparatus that houses a gas supply unit and integrates the gas supply unit and the lid.

  According to the present invention, in a substrate processing apparatus that supplies a processing gas to a substrate and performs a predetermined process on the substrate, a reaction container including a container body and a lid that closes the container body from above; A substrate mounting section to be mounted; a heat generating section for heating the substrate; and a gas supply unit for supplying a processing gas from above the reaction vessel. A recess is formed on the upper surface of the lid, and the recess The gas supply unit is housed in the unit, and the gas supply unit and the lid are integrated, so that the distance from the gas supply unit until the process gas is supplied to the reaction vessel is shortened. The time required for switching operations such as replacement and exhaust can be shortened, and further, the excellent effect that the entire gas supply unit can be uniformly heated is exhibited.

1 is a schematic sectional elevation view of a reaction furnace in the present invention. It is a disassembled perspective view of the integrated unit in this invention. It is a schematic explanatory drawing which shows arrangement | positioning of the conventional reactor and integrated unit.

  Embodiments of the present invention will be described below with reference to the drawings.

  With reference to FIG. 1, the substrate processing apparatus of this embodiment will be described. In FIG. 1, the same components as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.

  FIG. 1 shows a reaction furnace 1 portion of a single wafer processing apparatus that processes one or several substrates at a time in the substrate processing apparatus.

  The reaction vessel 8 is constituted by a lid body 11 connected to the vessel body 9 via a hinge 12, and the lid body 11 can be rotated upward about the hinge 12 and the vessel body 9 is hermetically sealed. Block. A gas dispersion plate 14 is provided on the lid 11 so as to form a gas reservoir 13 between the ceiling surface and a treatment space 15 is formed between the gas dispersion plate 14 and the container body 9. The The processing space 15 accommodates a substrate placing portion 16 that can be moved up and down and is rotatable. A concave portion 17 is formed on the surface of the lid body 11 opposite to the ceiling surface, that is, the upper surface of the lid body 11. Yes.

  A gas supply unit 2 is housed in the recess 17, and the gas supply unit 2 includes a plurality of supply pipes 3, a plurality of air valves 4, for example, a flow rate controller (MFC) integrated into each of the plurality of air valves 4. 5 (see FIG. 3), a flow path section 18, a seat plate 19 and a VENT pipe 6 (not shown). The flow path section 18 is connected to the supply pipe 3, the air valve 4, and the air valves 4 and 4. A road is formed.

  Further, a gas introduction pipe 21a that opens to the concave portion 17 and opens to the lower surface is formed in an L shape in the thick part of the lid body 11, and the gas introduction pipe 21b is formed in the thick part of the container body 9. Are opened in the upper and lower surfaces, and a plurality of the gas introduction pipes 21a and the gas introduction pipes 21b are provided perpendicular to the paper surface. A pipe joint 22 is provided at the tip of the gas introduction pipe 21a on the concave portion 17 side, and a gas supply source (not shown) is connected to the tip of the gas introduction pipe 21b on the lower surface side of the container body 9, The connection surface of the gas introduction pipe 21a and the gas introduction pipe 21b is hermetically sealed by a sealing member 23 such as an O-ring, and the gas introduction pipe 21a and the gas introduction pipe 21b communicate with each other in an airtight state. Yes.

  The gas introduction pipe 21 a can be connected to the supply pipe 3 through the pipe joint 22, and the supply pipe 3 is connected to the flow path portion 18 and the air valve 4, and is not shown outside the reaction furnace 1. Gas is supplied from the gas supply source to the air valve 4 through the gas introduction pipe 21, the supply pipe 3, and the flow path portion 18. The air valve 4 is electrically connected to a control unit 24, which will be described later, detects the flow rate of the processing gas supplied to the air valve 4, feeds back to the control unit 24, and in response to a command from the control unit 24, Has the function of adjusting the flow rate.

  The seat plate 19 is provided with a gas introduction hole 25 communicating with the supply pipe 3 for supplying the processing gas into the reaction vessel 8, so that the lid 11 avoids the gas supply unit 2. The upper surface is covered with a block heater 7 in which holes are formed.

  A substrate 26 to be processed such as a wafer is placed on the upper surface of the substrate platform 16, and a heating unit 27 such as a resistance heating element is provided inside the substrate platform 16. A substrate push-up unit 28 that moves up and down relative to the substrate 16 is provided, and the substrate push-up unit 28 includes the heat generating unit 27 and a push-up pin 31 that passes through the substrate mounting table 29 of the substrate mounting unit 16. is doing.

  The gas dispersion plate 14 is provided with a number of gas dispersion holes 32, and a gas supply hole 33 communicates with the gas reservoir 13, and the gas supply hole 33 is connected to the gas supply unit 2 and the gas introduction pipe 21. The gas is supplied from a gas supply source (not shown). The supplied gas is dispersed from the gas reservoir 13 through the gas dispersion holes 32 and is uniformly introduced into the container body 9. The gas reservoir 13 is provided with an in-furnace temperature detector (not shown). The in-furnace temperature detector detects the temperature of the processing gas supplied into the reaction vessel 8 and controls the detection result to the control. A function of feeding back to the unit 24 is provided.

  Further, an exhaust system 34 communicates with the container body 9, and the exhaust system 34 is connected to an exhaust device having a vacuum pump or the like (not shown). The exhaust system 34 is provided with a pressure detector (not shown). The pressure detector has a function of detecting the pressure in the reaction vessel 8 and feeding it back to the control unit 24. The exhaust system 34 is provided at a position where it does not interfere with the gas introduction pipe 21b.

  The substrate platform 16 is provided with a substrate temperature detector (not shown) that detects the temperature of the substrate platform 29, and the substrate temperature detector is the temperature of the substrate platform 29, that is, the temperature of the substrate 26. , And a function of feeding back the detection result to the control unit 24.

  The control unit 24 is electrically connected to the air valve 4, the block heater 7, the heat generating unit 27, and the exhaust system 34, and the air valve 4, the furnace temperature detector, the substrate temperature detector, Each mechanism is controlled according to the detection result from the pressure detector.

  The container body 9 is provided with a substrate loading / unloading port 35, which is opened and closed by a gate valve 36, and a substrate transfer mechanism (not shown) places the substrate 26 on the substrate mounting table 29 through the substrate loading / unloading port 35. It is designed to pay out. In addition, the part where the support part 37 of the substrate platform 16 penetrates the container body 9 is sealed by a bellows 38.

  Next, the details of the gas supply unit 2 will be described with reference to FIG.

  The gas supply unit 2 includes the air valve 4, the supply pipe 3, the MFC 5 (not shown) integrated into the air valve 4, the VENT pipe 6, the flow path portion 18, and the seat plate 19. The gas supply unit 2 is integrated into an integrated unit by stacking the seat plate 19, the flow path portion 18, and the air valve 4.

  The flow path portion 18 is composed of a plurality of flow path blocks 39, in which only the flow paths are formed in the flow path block 39, or the supply pipes having different shapes and lengths such as straight pipes and L-shaped pipes. There are various types such as those to which 3 is fixed, and by combining a plurality of flow path blocks 39, the flow path section 18 having a desired flow path can be formed. Further, the VENT pipe 6 is provided with an exhaust device such as a vacuum pump (not shown), and the gas in the flow path can be exhausted by operating the exhaust device.

  When the gas supply unit 2 is assembled, first, a plurality of air valves 4 (for example, the number of processing gases used for substrate processing and the number connected to the VENT pipe 6) are prepared.

  Next, the gas introduction pipe 21 connected to each gas supply source used for substrate processing and the flow path block 39 provided with the supply pipe 3 are connected. The supply pipe 3 has a screw portion 40 formed at the tip thereof, and a pipe joint 22 of the gas introduction pipe 21 a is screwed to the screw part 40, and the supply pipe 3 and the gas introduction pipe are connected via the pipe joint 22. 21 is communicated.

  Thereafter, the flow path of the flow path block 39 connected to the gas introduction pipe 21 is connected to the air valve 4 so that the flow path of the gas introduction pipe 21 and the flow path block 39 communicate with each other and is not shown. The flow rate of the gas supplied from the gas supply source is controlled by the air valve 4.

  The same operation as described above is performed for the other gas introduction pipes 21 so that the flow rate of the gas used in the substrate processing can all be controlled by the air valve 4 and the MFC 5. Then, when using it as a single gas, form a flow path so that it does not mix with other gases, and when using a mixed gas, form a flow path so that multiple flow paths merge. In addition, the flow path block 39 is combined to form a desired flow path.

  The flow path block 39 placed at a position corresponding to the gas introduction hole 25 has a flow path opened downward, and the seat plate 19 is connected so that the flow path and the gas introduction hole 25 communicate with each other. The assembly of the gas supply unit 2 is completed by placing the flow path portion 18 and the air valve 4 thereon.

  After the assembly of the gas supply unit 2 is completed, the gas supply unit 2 is accommodated in the recess 17 and positioned so that the gas introduction hole 25 and the gas supply hole 33 formed in the lid body 11 communicate with each other. After the positioning, the seat plate 19 and the lid body 11 are fixed by fixing tools such as bolts through screw holes 41 formed in the four corners of the seat plate 19.

  In addition, a sealing member such as an O-ring (not shown) is provided at the periphery of the gas introduction hole 25 and the gas supply hole 33, and the flow path portion 18 is placed on the seat plate 19 to supply the gas. By housing the unit 2 in the recess 17, the flow path of the flow path section 18, the gas introduction hole 25, and the gas supply hole 33 communicate with each other in an airtight manner.

  Note that the gas supply unit 2 does not connect the gas reservoir 13 and the gas supply unit 2 by providing a sealing member at the peripheral portions of the gas introduction hole 25 and the gas supply hole 33 and integrating them. The supply pipe 3 longer than the thickness of the seat plate 19 and the lid 11 is connected to the flow path block 39 so that the supply pipe 3 penetrates the gas introduction hole 25 and the gas supply hole 33. Also good.

  Next, processing of the substrate 26 will be described.

  The inside of the reaction vessel 8 is in a vacuum state, and a substrate transport mechanism (not shown) places the substrate 26 on the substrate platform 29 through the substrate carry-in / out port 35.

  When the substrate 26 is mounted on the substrate mounting table 29, the substrate mounting unit 16 is lowered so that the push-up pin 31 protrudes, and the substrate transport mechanism mounts the substrate 26 on the push-up pin 31. To do. With the substrate transport mechanism retracted, the substrate platform 16 is raised and the substrate 26 is placed on the substrate platform 29. While the substrate 26 is placed, the substrate platform 16 is rotated at a low speed, and the rotation of the substrate platform 16 improves the uniformity of the substrate processing in the circumferential direction.

  The gate valve 36 hermetically closes the substrate loading / unloading port 35, and an inert gas such as nitrogen gas is supplied from the gas supply hole 33 through the gas supply unit 2 from a gas supply source (not shown). The inside of the furnace 1 is purged and exhausted from the exhaust system 34. In the reactor 1, the control unit 24 controls the air valve 4 and the exhaust system 34 to adjust to a predetermined pressure, and the heating unit 27 controls the substrate 26 to a predetermined temperature. .

  In a state where the substrate 26 is heated to a predetermined temperature, the gas supply unit 2 switches from an inert gas to a processing gas corresponding to the substrate processing, such as oxygen, and is heated to a predetermined temperature by the block heater 7. Then, the gas is supplied from the gas supply unit 2 to the gas supply hole 33.

  Depending on the contents of the substrate processing, the processing gas may be a single gas or a different type of gas may be supplied. As a supply method when different kinds of gases are supplied, a mixed gas mixed in advance at a predetermined ratio in the gas supply unit 2 is supplied to the gas supply hole 33 or controlled to a predetermined flow rate ratio. There is a method of supplying gas individually to the gas supply holes 33.

  At this time, nitrogen gas, oxygen gas, hydrogen gas, water vapor, NH3 single gas, or two kinds of mixed gases are used as the processing gas.

  When a predetermined time has elapsed and the substrate processing is completed, the supply of the processing gas is stopped, the inside of the reaction vessel 8 is evacuated by exhausting from the exhaust system 34, and further, the block heater 7 and the heating unit 27 are used. The heating is stopped and the temperature of the substrate 26 is lowered to a predetermined temperature.

  Thereafter, the substrate platform 16 is lowered, and a substrate transport mechanism (not shown) delivers the substrate 26 to the outside of the reactor 1 through the substrate loading / unloading port 35.

  The substrate 26 is processed by repeating the above processing.

  As described above, since the gas supply unit 2 is embedded in the concave portion 17 and integrated with the lid 11, space is saved by shortening the length of the supply pipe 3, and the processing gas flow is reduced. By reducing the distance from the air valve 4 for adjusting the flow rate to the gas supply hole 33 for supplying the processing gas to the reaction furnace 1, the volume in the supply pipe 3 is reduced, and gas supply, replacement, exhaust, etc. The time required for switching the repetitive operation can be reduced, and a stable repetitive operation can be performed.

  Further, since the entire gas supply unit 2 can be heated only by providing the block heater 7 on the lid 11, the reactor 1, the gas supply unit 2, the supply pipe 3, the VENT pipe It is not necessary to provide the block heater 7 in each of the 6, reducing costs and performing uniform heating of the processing gas supplied to the reaction furnace 1 without performing temperature control by complicated zone division. it can.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary note 1) In a substrate processing apparatus for supplying a processing gas to a substrate and performing a predetermined process on the substrate, a reaction container including a container main body and a lid for closing the container main body from above, and the substrate are placed. A substrate mounting section, a heat generating section for heating the substrate, and a gas supply unit for supplying a processing gas from above the reaction vessel, and a recess is formed on the upper surface of the lid, A substrate processing apparatus, wherein a gas supply unit is accommodated, and the gas supply unit and the lid are integrated.

  (Supplementary note 2) The substrate processing apparatus according to supplementary note 1, wherein the gas supply unit includes a flow path section, and the flow path section includes a plurality of flow path blocks.

DESCRIPTION OF SYMBOLS 1 Reaction furnace 2 Gas supply unit 3 Supply piping 4 Air valve 6 VENT pipe 7 Block heater 8 Reaction container 9 Container main body 11 Lid body 17 Recessed part 18 Channel part 19 Seat plate 21 Gas introduction pipe 26 Substrate 39 Channel block

Claims (1)

  In a substrate processing apparatus for supplying a processing gas to a substrate and performing a predetermined process on the substrate, a reaction container comprising a container body and a lid body that closes the container body from above, and a substrate mounting for mounting the substrate And a heating unit for heating the substrate, and a gas supply unit for supplying a processing gas from above the reaction vessel. A recess is formed on the upper surface of the lid, and the gas supply unit is provided in the recess. A substrate processing apparatus which is housed and the gas supply unit and the lid are integrated.

Images