JP2003147510A - Evaporation source - Google Patents
Evaporation sourceInfo
- Publication number
- JP2003147510A JP2003147510A JP2001349646A JP2001349646A JP2003147510A JP 2003147510 A JP2003147510 A JP 2003147510A JP 2001349646 A JP2001349646 A JP 2001349646A JP 2001349646 A JP2001349646 A JP 2001349646A JP 2003147510 A JP2003147510 A JP 2003147510A
- Authority
- JP
- Japan
- Prior art keywords
- container
- evaporation
- lid portion
- lid
- evaporation material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 151
- 230000008020 evaporation Effects 0.000 title claims abstract description 151
- 239000000463 material Substances 0.000 claims abstract description 85
- 239000010408 film Substances 0.000 abstract description 34
- 239000010409 thin film Substances 0.000 abstract description 18
- 230000020169 heat generation Effects 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000011364 vaporized material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、蒸発源に関し、特
に、有機ＬＥＤ素子の製造に用いられ、有機蒸発材料薄
膜を成膜する技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an evaporation source, and more particularly to a technique for forming an organic evaporation material thin film, which is used for manufacturing an organic LED element.
【０００２】[0002]
【従来の技術】近年、フルカラーフラットパネルディス
プレイ用の素子として、有機ＬＥＤ素子が注目されてい
る。有機ＬＥＤ素子は有機多層膜を有しており、有機Ｌ
ＥＤ素子の製造には、有機薄膜を成膜する技術が不可欠
である。通常、有機薄膜を成膜するには、真空蒸着法が
用いられている。2. Description of the Related Art In recent years, organic LED elements have been receiving attention as elements for full-color flat panel displays. The organic LED element has an organic multilayer film,
A technique for forming an organic thin film is indispensable for manufacturing an ED element. Usually, a vacuum vapor deposition method is used to form an organic thin film.
【０００３】図９の符号１０３ａ、１０３ｂ、１０３ｃ
は、真空蒸着法に用いられる従来の蒸発源を示してお
り、符号１０１は、本発明の蒸発源１０３ａ、１０３
ｂ、１０３ｃを備えた成膜装置を示している。Reference numerals 103a, 103b, 103c in FIG.
Indicates a conventional evaporation source used in a vacuum evaporation method, and reference numeral 101 indicates evaporation sources 103a and 103 of the present invention.
The film-forming apparatus provided with b and 103c is shown.
【０００４】成膜装置１０１は真空槽１０２を有してい
る。この真空槽１０２は、図示しない真空排気系に接続
されており、真空排気系を起動すると、真空槽１０２の
内部を真空排気できるように構成されている。The film forming apparatus 101 has a vacuum chamber 102. The vacuum chamber 102 is connected to a vacuum exhaust system (not shown), and when the vacuum exhaust system is activated, the inside of the vacuum chamber 102 can be vacuum exhausted.
【０００５】真空槽１０２の内部下方には、蒸発装置１
１０が配置されている。この蒸発装置１１０は、取付板
１８７と、煙突部材１０７と、蒸発源１０３ａ、１０３
ｂ、１０３ｃとを有している。Below the inside of the vacuum chamber 102, the evaporator 1 is installed.
Ten are arranged. The evaporation device 110 includes a mounting plate 187, a chimney member 107, and evaporation sources 103a and 103.
b and 103c.
【０００６】取付板１８７は、真空槽１０２の内部下方
に水平に配置されている。煙突部材１０７は、有底容器
状であって、その平面図を図１０(ｂ)に示すように、底
部に貫通孔であって、後述する蒸発材料の蒸気を放出す
るるアパーチャ１７０が設けられて成る。この煙突部材
１０７は、容器の開口が鉛直下方に向けられた状態で、
開口の縁が取付板１８７表面に固定されている。The mounting plate 187 is horizontally arranged below the inside of the vacuum chamber 102. The chimney member 107 is in the shape of a container with a bottom, and as shown in the plan view of FIG. 10 (b), a through hole is provided in the bottom portion, and an aperture 170 for discharging the vapor of the evaporation material described later is provided. Consists of This chimney member 107, with the container opening facing vertically downward,
The edge of the opening is fixed to the surface of the mounting plate 187.
【０００７】蒸発源１０３ａ、１０３ｂ、１０３ｃは、
取付板１８７と煙突部材１０７とで囲まれた空間内部に
横一列に配置されている。各蒸発源１０３ａ、１０３
ｂ、１０３ｃのうち、中央に配置された蒸発源１０３ａ
と、その両側に配置された蒸発源１０３ｂ、１０３ｃ
は、その大きさと、蒸発させる蒸発材料とが異なるが、
他の構成はいずれも同じであるため、以下では、中央に
配置された蒸発源１０３ａの構成について説明する。The evaporation sources 103a, 103b and 103c are
It is arranged in a horizontal row inside the space surrounded by the mounting plate 187 and the chimney member 107. Each evaporation source 103a, 103
b and 103c, the evaporation source 103a arranged in the center
And evaporation sources 103b and 103c arranged on both sides thereof
Differs in its size and the evaporation material to be evaporated,
Since all other configurations are the same, the configuration of the evaporation source 103a arranged in the center will be described below.
【０００８】図１０（ａ）に、図９のＸ−Ｘ線断面図を
示す。図９は、図１０(ａ)のＹ−Ｙ線断面図に相当して
いる。蒸発源１０３ａは、容器１３０ａと、放出板１３
６ａと、遮蔽板１３２ａとを有している。FIG. 10 (a) is a sectional view taken along line XX of FIG. FIG. 9 corresponds to a cross-sectional view taken along the line YY of FIG. The evaporation source 103a includes a container 130a and a discharge plate 13
6a and a shield plate 132a.
【０００９】容器１３０ａは、その開口が鉛直上方に向
けられており、放出板１３６ａは、容器１３０ａの開口
の縁上に、その開口の縁と密着した状態で載せられてい
る。この放出板１３６ａは、蓋部１３１ａと、その両端
に配置された第１、第２の支持部１３３ａ1、１３３ａ2
とで構成されている。The opening of the container 130a is directed vertically upward, and the discharge plate 136a is placed on the edge of the opening of the container 130a in close contact with the edge of the opening. The emission plate 136a includes a lid portion 131a and first and second support portions 133a 1 and 133a 2 arranged at both ends thereof.
It consists of and.
【００１０】図１１に、蒸発源１０３ａの平面図を示
す。容器の開口１３９ａは細長の矩形であって、蓋部１
３１ａは、開口１３９ａよりも大きい細長矩形にされ、
蓋部１３１ａの四辺が、ともに容器１３０ａの四辺より
外側に位置するように容器１３０ａの開口１３９ａの縁
上に乗せられており、蓋部１３１ａは、その縁部分が容
器の開口１３９ａより外側にはみ出し、その開口１３９
ａを覆うようになっている。FIG. 11 shows a plan view of the evaporation source 103a. The opening 139a of the container is an elongated rectangle, and the lid 1
31a has an elongated rectangular shape larger than the opening 139a,
The lid 131a is placed on the edges of the opening 139a of the container 130a so that the four sides of the lid 131a are located outside the four sides of the container 130a. The edge of the lid 131a protrudes outside the opening 139a of the container. , Its opening 139
It is designed to cover a.
【００１１】上述した蓋部１３１ａの中央部分には、貫
通孔１３８ａが設けられており、貫通孔１３８ａと開口
１３９ａにより容器１３０ａの内部と外部とが接続され
るようになっている。この貫通孔１３８ａは容器の開口
１３９ａより小さく、貫通孔１３８ａ近傍の部分の蓋部
１３１ａは容器１３０ａの内部底面上に位置する。A through hole 138a is provided in the central portion of the lid 131a described above, and the inside and outside of the container 130a are connected by the through hole 138a and the opening 139a. The through hole 138a is smaller than the opening 139a of the container, and the lid 131a near the through hole 138a is located on the inner bottom surface of the container 130a.
【００１２】また、容器１３０ａ内部には、鉛直状態に
された棒状の取付部材１５１ａが４本配置されている。
貫通孔１３８ａは矩形にされ、蓋部１３１ａの、容器１
３０ａの内部底面に対向する側の面には、貫通孔１３８
ａの四隅近傍に、各取付部材１５１ａの上端部が一本ず
つ固定されている。他方、各取付部材１５１ａの下端部
は、遮蔽板１５２ａの四隅に固定されており、結果とし
て遮蔽板１５２ａは、図１０(ａ)に示すように取付部材
１５１ａにより蓋部１３１ａの下方に吊り下げられてい
る。その遮蔽板１３２ａは、容器１３０ａの内部底面と
開口１３９ａとの間に位置しており、容器１３０ａの内
部底面と遮蔽板１３２ａとが直接接触しないようになっ
ている。Further, four vertical rod-shaped mounting members 151a are arranged inside the container 130a.
The through hole 138a has a rectangular shape, and the lid 131a has a container 1
A through hole 138 is formed on the surface of the side opposite to the inner bottom surface of 30a.
The upper ends of the respective mounting members 151a are fixed one by one near the four corners of a. On the other hand, the lower end of each mounting member 151a is fixed to the four corners of the shielding plate 152a, and as a result, the shielding plate 152a is hung below the lid 131a by the mounting member 151a as shown in FIG. 10 (a). Has been. The shield plate 132a is located between the inner bottom surface of the container 130a and the opening 139a so that the inner bottom surface of the container 130a and the shield plate 132a do not come into direct contact with each other.
【００１３】吊り下げられた遮蔽板１３２ａは細長矩形
に形成され、貫通孔１３８ａより大きくされており、遮
蔽板１３２ａの縁は、貫通孔１３８ａの縁より外側には
み出している。The suspended shield plate 132a is formed in an elongated rectangular shape and is larger than the through hole 138a, and the edge of the shield plate 132a extends outside the edge of the through hole 138a.
【００１４】取付板１８７ａ上には、二個の支持台１７
７ａ1、１７７ａ2が所定間隔をおいて固定されている。
各支持台１７７ａ1、１７７ａ2の上には、それぞれ第
１、第２の電流導入端子１７５ａ1、１７５ａ2が固定さ
れている。上述した第１、第２の支持部１３３ａ1、１
３３ａ2は、それぞれ図１０(ａ)に示すように第１、第
２の電流導入端子１７５ａ1、１７５ａ2に固定されてお
り、その結果、蒸発源１０３ａは第１、第２の電流導入
端子１７５ａ1、１７５ａ2を介して支持台１７７ａ 1、
１７７ａ2上に支持されることになる。On the mounting plate 187a, two support stands 17 are provided.
7a1177a2Are fixed at a predetermined interval.
Each support 177a1177a2On top of each
First and second current introducing terminals 175a1175a2Is fixed
Has been. The first and second support portions 133a described above11
33a2Are the first and the second, respectively, as shown in FIG.
2 current introduction terminal 175a1175a2Fixed to
As a result, the evaporation source 103a introduces the first and second currents.
Terminal 175a1175a2Via the support 177a 1,
177a2Will be supported above.
【００１５】こうして、蒸発源１０３ａが支持台１７７
ａ1、１７７ａ2上に支持された状態では、容器１３０ａ
の底面と取付板１８７との間に隙間があり、その隙間
に、ヒータ１５８ａが配置されている。真空槽１０２の
外部には電源１８０が配置され、上述したヒータ１５８
ａは電源１８０に接続されている。このヒータ１５８ａ
は抵抗発熱体で構成されており、電源１８０を起動する
と、ヒータ１５８ａの両端に電圧が印加されて電流が流
れ、ヒータ１５８ａが発熱して容器１３０ａを加熱させ
られるようになっている。In this way, the evaporation source 103a is supported by the support 177.
a 1 and 177 a 2 , the container 130 a is supported.
There is a gap between the bottom surface of the and the mounting plate 187, and the heater 158a is arranged in the gap. A power source 180 is arranged outside the vacuum chamber 102, and the heater 158 described above is used.
a is connected to the power supply 180. This heater 158a
Is composed of a resistance heating element, and when the power supply 180 is activated, a voltage is applied across the heater 158a and a current flows, the heater 158a generates heat and the container 130a is heated.
【００１６】容器１３０ａ内に、蒸発材料１４０ａを収
容し、その容器１３０ａを真空雰囲気中に配置した状態
でヒータ１５８ａを発熱させると、容器１３０ａが加熱
され、容器１３０ａ内の蒸発材料１４０ａが加熱され、
蒸発材料１４０ａの蒸気が放出される。蒸発材料１４０
ａの蒸気は、遮蔽板１３２ａと放出板１３６ａとの間の
隙間を通った後に、貫通孔１３８ａから蒸発源１０３ａ
の外部へと放出される。When the heater 158a is heated while the evaporation material 140a is contained in the container 130a and the container 130a is placed in a vacuum atmosphere, the container 130a is heated and the evaporation material 140a in the container 130a is heated. ,
The vapor of the evaporation material 140a is released. Evaporation material 140
The vapor of a passes through the gap between the shield plate 132a and the discharge plate 136a, and then passes through the through hole 138a to the evaporation source 103a.
Is released to the outside of.
【００１７】蒸発材料の蒸気のうち、放出板１３６ａに
蒸気が到達すると、その蒸気は、放出板１３６ａに付着
する。また、蒸発材料が突沸により飛散すると、その蒸
発材料は遮蔽板１３２に付着する。When the vapor of the vaporized material reaches the emission plate 136a, the vapor adheres to the emission plate 136a. Further, when the evaporation material is scattered by bumping, the evaporation material adheres to the shield plate 132.
【００１８】上述した放出板１３６ａと遮蔽板１３２ａ
と取付部材１５１ａとはともにＴａ、Ｆｅ−Ｃｒ、グラ
ファイト、セラミック等の抵抗発熱体で構成され、上述
した第１、第２の電流導入端子１７５ａ1、１７５ａ
2は、導線１９５で電源１８０と電気的に接続されてお
り、電源１８０を起動し、第１の電流導入端子１７５ａ
1に正電圧を印加し、第２の電流導入端子１７５ａ2に負
電圧を印加すると、第１の電流導入端子１７５ａ1から
放出板１３６ａを介して第２の電流導入端子１７５ａ2
へと電流が流れ、放出板１３６ａが発熱する。このた
め、発熱した放出板１３６ａに蒸発材料の蒸気が到達し
て蒸発材料が付着しても、その蒸発材料は放出板１３６
ａで加熱され、再蒸発するようになっている。The above-mentioned emission plate 136a and shield plate 132a
Both the mounting member 151a and the mounting member 151a are made of resistance heating elements such as Ta, Fe-Cr, graphite, and ceramics, and the above-described first and second current introducing terminals 175a 1 and 175a.
2 is electrically connected to the power source 180 by the lead wire 195, starts the power source 180, and connects the first current introduction terminal 175a.
A positive voltage is applied to 1, and a negative voltage is applied to the second cable terminal 175a 2, a second cable terminal via a release plate 136a from the first cable terminal 175a 1 175a 2
Current flows to the discharge plate 136a to generate heat. For this reason, even if the vapor of the evaporation material reaches the emission plate 136a that has generated heat and the evaporation material adheres, the evaporation material will not be discharged.
It is heated at a and is re-evaporated.
【００１９】こうして放出板１３６ａに電流が流れる
と、放出板１３６ａの貫通孔１３８ａの両端に電位差が
生じ、この電位差により、放出板１３６ａから取付部材
１５１ａを介して遮蔽板１３２ａにも電流が流れ、遮蔽
板１３２ａが発熱する。このため、蒸発材料が突沸して
飛散し、遮蔽板１３２ａに付着しても、その蒸発材料は
遮蔽板１３２ａで加熱され、蒸発するようになってい
る。When a current flows through the emission plate 136a in this manner, a potential difference is generated at both ends of the through hole 138a of the emission plate 136a. Due to this potential difference, a current also flows from the emission plate 136a to the shield plate 132a via the mounting member 151a, The shield plate 132a generates heat. Therefore, even if the evaporation material is bumped and scattered and adheres to the shield plate 132a, the evaporation material is heated by the shield plate 132a and evaporated.
【００２０】こうして放出板１３６ａが発熱し、第１、
第２の支持部１３３ａ1、１３３ａ2が昇温すると、第
１、第２の電流導入端子１７５ａ1、１７５ａ2も昇温す
る。その結果、第１、第２の電流導入端子１７５ａ1、
１７５ａ2に接続された支持台１７７ａ1、１７７ａ2や
導線１９５の温度が上昇すると、導線１９５に接続され
た電源１８０や、支持台１７７ａ1、１７７ａ2を介して
取付板１８７に接続された移動機構等の温度が上昇して
しまい、電源１８０や移動機構等が熱によって異常動作
をすることがある。In this way, the emission plate 136a generates heat, and the first,
When the temperature of the second support portions 133a 1 and 133a 2 is raised, the temperature of the first and second current introduction terminals 175a 1 and 175a 2 is also raised. As a result, the first and second current introduction terminals 175a 1 ,
When the temperature of the supporting bases 177a 1 and 177a 2 connected to 175a 2 and the conducting wire 195 rises, the power source 180 connected to the conducting wire 195 and the movement connected to the mounting plate 187 via the supporting bases 177a 1 and 177a 2 The temperature of the mechanism or the like may rise, and the power supply 180, the moving mechanism, or the like may malfunction due to heat.
【００２１】この熱による対策として、断熱材を用いる
対策も考えられるが、断熱材は殆どが絶縁材料で構成さ
れており、導線１９５と第１、第２の電流導入端子１７
５ａ 1、１７５ａ2とは、第１、第２の支持部１３３
ａ1、１３３ａ2で電気的に接続されているので、断熱材
を設けることはできない。As a countermeasure against this heat, a heat insulating material is used.
Countermeasures can be considered, but most of the heat insulating materials are composed of insulating materials.
The lead wire 195 and the first and second current introduction terminals 17
5a 1175a2Is the first and second support portions 133.
a1133a2Insulation because it is electrically connected with
Cannot be provided.
【００２２】このため、支持台１７７ａ1、１７７ａ2の
内部には図示しない通水管が設けられており、通水管内
に冷却水を通して、支持台１７７ａ1、１７７ａ2上に配
置された第１、第２の電流導入端子１７５ａ1、１７５
ａ2を冷却し、第１、第２の電流導入端子１７５ａ1、１
７５ａ2の温度が過度に上昇しないようになっている。[0022] Therefore, the support table 177a 1, 177a in the inside of the 2 and the water pipe (not shown) is provided, through the cooling water passing water pipe, a support base 177a 1, first disposed on the 177a 2, Second current introducing terminals 175a 1 , 175
a 2 is cooled, and the first and second current introducing terminals 175a 1 , 1
The temperature of 75a 2 is prevented from rising excessively.
【００２３】しかしながら第１、第２の電流導入端子１
７５ａ1、１７５ａ2を冷却すると第１、第２の支持部１
３３ａ1、１３３ａ2の温度が蓋部１３１ａの中央部分の
温度より低くなり、第１、第２の支持部１３３ａ1、１
３３ａ2の近傍の蓋部１３１ａの両端部に蒸発材料の蒸
気が付着すると、蒸発材料が蓋部１３１ａの両端部に析
出してしまうという問題が生じていた。However, the first and second current introducing terminals 1
When 75a 1 and 175a 2 are cooled, the first and second support portions 1
The temperature of 33a 1 , 133a 2 becomes lower than the temperature of the central portion of the lid 131a, and the first and second support portions 133a 1 , 1
When the both end portions of the lid portion 131a in the vicinity of 33a 2 vapor of the vaporization material is deposited, the evaporation material has occurred a problem that precipitates at both ends of the lid portion 131a.
【００２４】真空槽１０２内部の上方には基板ホルダー
１０４が設けられている。この基板ホルダー１０４は、
蒸着膜を成膜する対象である基板を、その成膜面が鉛直
下方を向いた状態で保持できるように構成されている。
図９には基板ホルダー１０４に基板が保持された状態を
示し、保持された基板を符号１０５に示している。保持
された基板１０５の下方近傍にはマスク１０６が配置さ
れている。マスク１０６には、開口１６０が設けられて
おり、この開口１６０に基板１０５の成膜面が露出する
ようになっている。A substrate holder 104 is provided above the inside of the vacuum chamber 102. This substrate holder 104 is
The substrate on which the vapor deposition film is to be formed can be held in a state in which the film formation surface faces vertically downward.
FIG. 9 shows a state where the substrate is held by the substrate holder 104, and the held substrate is shown by reference numeral 105. A mask 106 is arranged near the lower side of the held substrate 105. An opening 160 is provided in the mask 106, and the film formation surface of the substrate 105 is exposed in the opening 160.
【００２５】上述した蒸発源１０３ａ、１０３ｂ、１０
３ｃを備えた成膜装置１０１で、基板表面に有機薄膜を
成膜するには、予め、中央に配置された蒸発源１０３ａ
の容器１３０ａに、有機薄膜のホスト材料となる蒸発材
料を入れ、その両側に配置された蒸発源１０３ｂ、１０
３ｃの容器１３０ｂ、１３０ｃに、ドーパント材料にな
る固体又は液体の蒸発材料を入れておく。ここでは、ホ
スト材料となる蒸発材料をＡｌｑ3(８−hydroxyquinoli
ne aluminium)とし、ドーパント材料となる蒸発材料を
ＤＣＪＴＢ、ルブレン等とする。The above evaporation sources 103a, 103b, 10
In order to form an organic thin film on the surface of the substrate with the film forming apparatus 101 equipped with 3c, the evaporation source 103a arranged in the center in advance is used.
In the container 130a, the evaporation material serving as the host material of the organic thin film is put, and the evaporation sources 103b, 10 arranged on both sides thereof.
A solid or liquid evaporation material to be a dopant material is placed in the containers 130b and 130c of 3c. Here, the evaporation material used as the host material is Alq 3 (8-hydroxyquinoli
nealuminium), and the evaporation material serving as the dopant material is DCJTB, rubrene, or the like.
【００２６】次いで真空排気系を起動し、真空槽１０２
の内部を真空排気する。真空槽１０２内部の圧力が、真
空蒸着に適した圧力以下になったら、その圧力を維持し
た状態で基板を保持させ、電源１８０を起動し、各蒸発
源１０３ａ、１０３ｂ、１０３ｃ内部の蒸発材料１４０
ａ、１４０ｂ、１４０ｃを蒸発させると、蒸発材料１４
０ａ、１４０ｂ、１４０ｃの蒸気は、各蒸発源１０３
ａ、１０３ｂ、１０３ｃの各貫通孔１３８ａ、１３８
ｂ、１３８ｃから放出される。Next, the evacuation system is activated and the vacuum chamber 102
The inside of is evacuated. When the pressure inside the vacuum chamber 102 becomes equal to or lower than the pressure suitable for vacuum deposition, the substrate is held while maintaining the pressure, the power source 180 is activated, and the evaporation material 140 inside each evaporation source 103a, 103b, 103c is activated.
When a, 140b, and 140c are evaporated, the evaporation material 14
The vapors of 0a, 140b, 140c are the evaporation sources 103
a, 103b, 103c through holes 138a, 138
b, 138c.
【００２７】各蒸発源１０３ａ、１０３ｂ、１０３ｃか
ら蒸発材料の蒸気が放出されると、その蒸気が煙突部材
１０７の内部で混合された後、アパーチャ１７０から真
空槽１０２の内部へと放出される。When the vapor of the evaporation material is discharged from each of the evaporation sources 103a, 103b, 103c, the vapor is mixed inside the chimney member 107 and then discharged from the aperture 170 into the vacuum chamber 102.
【００２８】上述した取付板１８７は、図示しない棒な
どの移動機構に固定されており、アパーチャー１７０か
ら放出された蒸発材料の蒸気が安定したら、移動機構を
動作させると、蒸発装置１１０が移動し、アパーチャ１
７０は基板ホルダー１０４の下方を通過する。アパーチ
ャ１７０から放出された蒸発材料の蒸気が、マスクの開
口１６０を介して基板１０５の成膜面に到達すると、成
膜面に蒸発材料が付着し、有機薄膜が成長する。The above-mentioned mounting plate 187 is fixed to a moving mechanism such as a rod (not shown). When the vapor of the evaporation material discharged from the aperture 170 becomes stable, the moving mechanism is operated to move the evaporation device 110. , Aperture 1
70 passes below the substrate holder 104. When the vapor of the evaporation material emitted from the aperture 170 reaches the film formation surface of the substrate 105 through the opening 160 of the mask, the evaporation material adheres to the film formation surface and an organic thin film grows.
【００２９】こうして蒸発装置１１０は、蒸発材料の蒸
気をアパーチャー１７０から放出しながら、基板１０５
の下方で一回往復移動をし、マスクの開口１６０から露
出する基板１０５の成膜面に、蒸発材料からなる有機薄
膜が成膜される。In this way, the evaporation device 110 discharges the vapor of the evaporation material from the aperture 170 while the substrate 105 is being discharged.
After reciprocating once under, the organic thin film made of the evaporation material is formed on the film forming surface of the substrate 105 exposed from the opening 160 of the mask.
【００３０】上述した成膜装置１０１では、蓋部１３１
ａの端部の温度が低くなって蒸発材料が析出してしまっ
ていたので、各蒸発源１０３ａ、１０３ｂ、１０３ｃの
各貫通孔１３８ａ、１３８ｂ、１３８ｃから蒸気が均一
に放出されなくなるので、アパーチャ１７０から放出さ
れる蒸気も均一ではなく、成膜される有機薄膜の膜厚分
布が均一ではなかった。In the film forming apparatus 101 described above, the lid 131
Since the temperature of the end portion of a is low and the evaporation material has been deposited, the vapor is not evenly emitted from the through holes 138a, 138b, 138c of the evaporation sources 103a, 103b, 103c. The vapor released from the film was not uniform, and the film thickness distribution of the formed organic thin film was not uniform.
【００３１】[0031]
【発明が解決しようとする課題】本発明は上記従来技術
の不都合を解決するために創作されたものであり、均一
な膜厚分布で、かつ膜質が良好な有機薄膜を形成する技
術を提供することを目的とする。The present invention was created in order to solve the above-mentioned disadvantages of the prior art, and provides a technique for forming an organic thin film having a uniform film thickness distribution and good film quality. The purpose is to
【００３２】[0032]
【課題を解決するための手段】上記課題を解決するため
に、請求項１記載の発明は、蒸発源であって、細長の開
口が形成された容器と、前記容器内に配置された蒸発材
料と、前記開口上に配置され、該開口を覆う蓋部と、前
記蓋部に設けられ、前記容器の内部と外部とを接続する
貫通孔と、前記蓋部と前記蒸発材料との間に配置された
遮蔽板と、前記遮蔽板を前記蓋部に取り付ける取付部材
と、前記容器の外部に配置され、電圧が印加される第
１、第２の電流導入端子と、前記第１、第２の電流導入
端子と前記蓋部の両端とをそれぞれ接続する第１、第２
の支持部とを有し、電流の流れる方向に対する単位長さ
あたりの発熱量は、前記第１、第２の支持部の方が、前
記蓋部に比して大きいことを特徴とする。請求項２記載
の発明は、請求項１記載の蒸発源であって、前記第１、
第２の支持部の幅は、前記蓋部の幅に比して小さくされ
ている。請求項３記載の発明は、請求項１記載の蒸発源
であって、前記第１、第２の支持部の厚みは、前記蓋部
の厚みに比して小さくされている。請求項４記載の発明
は、蒸発源であって、細長の開口が形成された容器と、
前記容器内に配置された蒸発材料と、前記開口上に配置
され、該開口を覆う蓋部と、前記蓋部に設けられ、前記
容器の内部と外部とを接続する貫通孔と、前記蓋部と前
記蒸発材料との間に配置された遮蔽板と、前記遮蔽板を
前記蓋部に取り付ける取付部材と、前記容器の外部に配
置され、電圧が印加される第１、第２の電流導入端子
と、前記第１、第２の電流導入端子と前記蓋部の両端と
をそれぞれ接続する第１、第２の支持部と、前記第１、
第２の支持部から発せられる熱を反射させて前記第１、
第２の支持部に返す熱反射装置を有する。In order to solve the above-mentioned problems, the invention according to claim 1 is an evaporation source, which is a container in which an elongated opening is formed, and an evaporation material arranged in the container. And a lid portion that is disposed on the opening and covers the opening, a through hole that is provided in the lid portion, and that connects the inside and the outside of the container, and is disposed between the lid portion and the evaporation material. Shield plate, a mounting member for mounting the shield plate to the lid portion, first and second current introducing terminals arranged outside the container and to which a voltage is applied, and the first and second First and second connecting the current introducing terminal and both ends of the lid, respectively
And the amount of heat generated per unit length in the direction of current flow is larger in the first and second support parts than in the lid part. The invention according to claim 2 is the evaporation source according to claim 1, wherein
The width of the second support portion is smaller than the width of the lid portion. The invention according to claim 3 is the evaporation source according to claim 1, wherein the thickness of the first and second support portions is smaller than the thickness of the lid portion. The invention according to claim 4 is an evaporation source, and a container having an elongated opening,
The evaporation material arranged in the container, a lid portion arranged on the opening and covering the opening, a through hole provided in the lid portion and connecting the inside and the outside of the container, and the lid portion. Plate disposed between the cover and the evaporation material, an attachment member for attaching the shield plate to the lid, and first and second current introduction terminals arranged outside the container and to which a voltage is applied. And first and second support portions that connect the first and second current introduction terminals to both ends of the lid portion, respectively, and the first and second support portions.
The heat generated from the second support portion is reflected to reflect the heat of the first,
It has a heat reflection device returned to the second support.
【００３３】本発明によれば、第１、第２の支持部に接
続された第１、第２の電流導入端子が過度に昇温するこ
とを防止するため、第１、第２の電流導入端子を冷却
し、その結果第１、第２の支持部が冷却されても、第
１、第２の支持部の発熱量は蓋部に比して大きくなるよ
うに構成されているので、第１、第２の支持部の温度は
低下せずに蓋部とほぼ同じになる。According to the present invention, in order to prevent the first and second current introducing terminals connected to the first and second supporting portions from being excessively heated, the first and second current introducing terminals are provided. Even if the first and second support parts are cooled as a result of cooling the terminals, the heat generation amounts of the first and second support parts are larger than that of the lid part. The temperatures of the first and second support portions do not decrease and become almost the same as the lid portion.
【００３４】このため、蒸発材料の蒸気が第１、第２の
支持部やその近傍の蓋部に到達して蒸発材料が付着して
も、付着した部分の温度は低くはなっていないので、付
着した蒸発材料は再蒸発し、第１、第２の支持部やその
近傍の蓋部には析出しない。Therefore, even if the vapor of the vaporized material reaches the first and second support portions and the lid portion in the vicinity thereof and the vaporized material is attached thereto, the temperature of the attached portion is not lowered, The attached evaporation material is re-evaporated and does not deposit on the first and second support portions or the lid portion in the vicinity thereof.
【００３５】従来では、複数枚の基板に成膜処理をする
と、析出した蒸発材料の量が増し、蒸発源内部での蒸気
の流れが不均一になり、ひいては有機薄膜の膜厚までも
が均一でなくなっていたが、本実施形態では、上述した
ように蒸発材料が析出することはないので、従来に比し
て有機薄膜の膜厚が均一となる。Conventionally, when a film is formed on a plurality of substrates, the amount of vaporized material deposited increases, the vapor flow inside the vaporization source becomes non-uniform, and even the film thickness of the organic thin film becomes uniform. However, in the present embodiment, since the evaporation material does not precipitate as described above, the film thickness of the organic thin film becomes more uniform than in the conventional case.
【００３６】なお、本発明において、第１、第２の支持
部の幅や、厚みを蓋部の幅や厚みに比して小さくするよ
うに構成してもよい。このように構成することにより、
第１、第２の支持部の電気抵抗が蓋部の電気抵抗に比し
て大きくなるので、電流が流れて発熱する際に、単位長
さあたりの発熱量は、第１、第２の支持部のほうが蓋部
に比して大きくなる。In the present invention, the width and thickness of the first and second support portions may be made smaller than the width and thickness of the lid portion. By configuring in this way,
Since the electric resistance of the first and second support portions is larger than the electric resistance of the lid portion, when the current flows and heat is generated, the heat generation amount per unit length is the same as that of the first and second support portions. The part is larger than the lid part.
【００３７】また、本発明において、熱反射装置を設
け、第１、第２の支持部から発せられる熱を反射させて
第１、第２の支持部に返すように構成してもよい。In the present invention, a heat reflecting device may be provided to reflect the heat generated from the first and second supporting portions and return the heat to the first and second supporting portions.
【００３８】このように構成することにより、第１、第
２の支持部から発せられた熱は第１、第２の支持部に再
び返されるため、返された熱により第１、第２の支持部
は昇温し、第１、第２の支持部が冷却されても、第１、
第２の支持部の温度は低下せずに蓋部とほぼ同じになる
ようにすることができる。従って、第１、第２の支持部
やその近傍の蓋部に蒸発材料が析出しないようにするこ
とができる。With this structure, the heat emitted from the first and second supporting portions is returned to the first and second supporting portions again, so that the returned heat causes the first and second supporting portions to return. Even if the first and second support parts are cooled, the first and second support parts are heated.
The temperature of the second support portion can be made substantially the same as that of the lid portion without lowering. Therefore, it is possible to prevent the evaporation material from being deposited on the first and second support portions and the lid portion in the vicinity thereof.
【００３９】[0039]
【発明の実施の形態】以下で図面を参照し、本発明の実
施形態について説明する。図１の符号３ａ、３ｂ、３ｃ
は、本発明の蒸発源を示しており、符号１は、本発明の
蒸発源３ａ、３ｂ、３ｃを備えた成膜装置を示してい
る。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. Reference numerals 3a, 3b and 3c in FIG.
Indicates an evaporation source of the present invention, and reference numeral 1 indicates a film forming apparatus including the evaporation sources 3a, 3b, 3c of the present invention.
【００４０】図１に、成膜装置１の断面図を示す。成膜
装置１は真空槽２を有している。この真空槽２は、図示
しない真空排気系に接続されており、真空排気系を起動
すると、真空槽２の内部を真空排気できるように構成さ
れている。FIG. 1 shows a sectional view of the film forming apparatus 1. The film forming apparatus 1 has a vacuum chamber 2. The vacuum chamber 2 is connected to a vacuum exhaust system (not shown), and when the vacuum exhaust system is activated, the inside of the vacuum chamber 2 can be vacuum exhausted.
【００４１】真空槽２の内部下方には、蒸発装置１０が
配置されている。この蒸発装置１０は、取付板８７と、
煙突部材７と、蒸発源３ａ、３ｂ、３ｃとを有してい
る。取付板８７は、真空槽２の内部下方に水平に配置さ
れている。An evaporation device 10 is arranged below the inside of the vacuum chamber 2. The evaporation device 10 includes a mounting plate 87,
It has a chimney member 7 and evaporation sources 3a, 3b and 3c. The mounting plate 87 is horizontally arranged below the inside of the vacuum chamber 2.
【００４２】煙突部材７は、有底容器状であって、その
平面図を図２(ｂ)に示すように、底部に、後述する蒸発
材料の蒸気を放出する貫通孔であるアパーチャ７０が設
けられて成る。この煙突部材７は、アパーチャ７０が上
方に向けられ、かつ容器の開口が鉛直下方に向けられた
状態で、開口の縁が取付板８７表面に固定されている。The chimney member 7 is in the shape of a container with a bottom, and as shown in the plan view of FIG. 2 (b), an aperture 70, which is a through hole for discharging the vapor of the evaporation material described later, is provided at the bottom. It consists of The chimney member 7 is fixed to the surface of the mounting plate 87 at the edge of the opening with the aperture 70 facing upward and the opening of the container facing vertically downward.
【００４３】蒸発源３ａ、３ｂ、３ｃは、取付板８７
と、煙突部材７とで囲まれる空間内部に、横一列に配置
されている。各蒸発源３ａ、３ｂ、３ｃのうち、中央に
配置された蒸発源３ａと、その両側に配置された蒸発源
３ｂ、３ｃは、その大きさと、収容する蒸発材料とが異
なるが、他の構成はいずれも同じであるため、以下で
は、中央に配置された蒸発源３ａの構成について説明す
る。The evaporation sources 3a, 3b and 3c are attached to the mounting plate 87.
And the chimney member 7 are arranged in a horizontal row inside the space. Of the evaporation sources 3a, 3b, 3c, the evaporation source 3a arranged in the center and the evaporation sources 3b, 3c arranged on both sides of the evaporation source 3a differ in size and evaporation material to be contained, but other configurations. Since all are the same, the configuration of the evaporation source 3a arranged in the center will be described below.
【００４４】図２（ａ）に、図１のＡ−Ａ線断面図を示
す。図１は、図２(ａ)のＢ−Ｂ線断面図に相当してい
る。蒸発源３ａは、容器３０ａと、放出板３６ａと、遮
蔽板３２ａとを有している。FIG. 2A shows a sectional view taken along the line AA of FIG. FIG. 1 corresponds to a sectional view taken along line BB of FIG. The evaporation source 3a has a container 30a, a discharge plate 36a, and a shield plate 32a.
【００４５】容器３０ａは、その開口が鉛直上方に向け
られており、放出板３６ａは、容器３０ａの開口の縁上
に、その開口の縁と密着した状態で載せられている。こ
の放出板３６ａは、蓋部３１ａと、その両端に配置され
た第１、第２の支持部３３ａ 1、３３ａ2とで構成されて
いる。The opening of the container 30a is directed vertically upward.
The discharge plate 36a is located on the edge of the opening of the container 30a.
Is placed in close contact with the edge of the opening. This
The discharge plate 36a is provided with a lid 31a and both ends thereof.
First and second support portions 33a 1, 33a2Composed of and
There is.
【００４６】図３に、蒸発源３ａの平面図を示す。容器
の開口３９ａは細長の矩形であって、蓋部３１ａは、開
口３９ａよりも大きい細長矩形にされ、蓋部３１ａの四
辺が、ともに容器３０ａの四辺より外側に位置するよう
に容器３０ａの開口３９ａの縁上に乗せられており、蓋
部３１ａは、その縁部分が容器の開口３９ａより外側に
はみ出し、その開口３９ａを覆うようになっている。FIG. 3 shows a plan view of the evaporation source 3a. The opening 39a of the container is an elongated rectangle, the lid 31a is formed into an elongated rectangle larger than the opening 39a, and the opening of the container 30a is opened so that the four sides of the lid 31a are both outside the four sides of the container 30a. The lid portion 31a is placed on the edge of the container 39a, and the edge portion of the lid portion 31a protrudes outside the opening 39a of the container to cover the opening 39a.
【００４７】上述した蓋部３１ａの中央部分には、貫通
孔３８ａが設けられており、貫通孔３８ａと開口３９ａ
により容器３０ａの内部と外部とが接続されるようにな
っている。この貫通孔３８ａは容器の開口３９ａより小
さく、貫通孔３８ａ近傍の部分の蓋部３１ａは容器３０
ａの内部底面上に位置する。A through hole 38a is provided in the central portion of the lid 31a described above, and the through hole 38a and the opening 39a are provided.
Thus, the inside and the outside of the container 30a are connected. The through hole 38a is smaller than the opening 39a of the container, and the lid portion 31a near the through hole 38a has the container 30
located on the inner bottom surface of a.
【００４８】また、容器３０ａ内部には、鉛直状態にさ
れた棒状の取付部材５１ａが４本配置されている。貫通
孔３８は矩形に形成され、蓋部３１ａの、容器３０ａの
内部底面に対向する側の面には、貫通孔３８ａの四隅近
傍の位置に、各取付部材５１ａの上端部が一本ずつ固定
されている。他方、各取付部材５１ａの下端部は、遮蔽
板５２ａの四隅に固定されており、結果として遮蔽板５
２ａは、図２(ａ)に示すように取付部材５１ａにより蓋
部３１ａの下方に吊り下げられている。その遮蔽板３２
ａは、容器３０ａの内部底面と開口３９ａとの間に位置
しており、容器３０ａの内部底面と遮蔽板３２ａとが直
接接触しないようになっている。Further, four vertically-arranged rod-shaped mounting members 51a are arranged inside the container 30a. The through holes 38 are formed in a rectangular shape, and the upper ends of the respective mounting members 51a are fixed one by one at positions near the four corners of the through holes 38a on the surface of the lid portion 31a that faces the inner bottom surface of the container 30a. Has been done. On the other hand, the lower end portion of each mounting member 51a is fixed to the four corners of the shield plate 52a, and as a result, the shield plate 5a.
2a is suspended below the lid 31a by a mounting member 51a as shown in FIG. 2 (a). The shield 32
a is located between the inner bottom surface of the container 30a and the opening 39a so that the inner bottom surface of the container 30a and the shielding plate 32a do not come into direct contact with each other.
【００４９】吊り下げられた遮蔽板３２ａは細長矩形に
形成され、貫通孔３８ａより大きくされており、遮蔽板
３２ａの縁は、貫通孔３８ａの縁より外側にはみ出して
いる。取付板８７ａ上には、二個の支持台７７ａ1、７
７ａ2が所定間隔をおいて固定されている。各支持台７
７ａ1、７７ａ2の上には、それぞれ第１、第２の電流導
入端子７５ａ1、７５ａ2が固定されている。上述した第
１、第２の支持部３３ａ 1、３３ａ2は、それぞれ図２
(ａ)に示すように第１、第２の電流導入端子７５ａ 1、
７５ａ2に固定されており、その結果、蒸発源３ａは第
１、第２の電流導入端子７５ａ1、７５ａ2を介して支持
台７７ａ1、７７ａ2上に支持されることになる。The suspended shielding plate 32a has an elongated rectangular shape.
Is formed and is larger than the through hole 38a, and is a shield plate.
The edge of 32a extends beyond the edge of the through hole 38a.
There is. Two support bases 77a are provided on the mounting plate 87a.1, 7
7a2Are fixed at a predetermined interval. Each support 7
7a1, 77a2On top of the first and second current conductors, respectively.
Input terminal 75a1, 75a2Is fixed. The above
1, 2nd support part 33a 1, 33a2Are respectively shown in FIG.
As shown in (a), the first and second current introducing terminals 75a 1,
75a2, So that the evaporation source 3a is
First and second current introducing terminal 75a1, 75a2Supported through
Stand 77a1, 77a2Will be supported above.
【００５０】こうして、蒸発源３ａが支持台７７ａ1、
７７ａ2上に支持された状態では、容器３０ａの底面と
取付板８７との間に隙間があり、その隙間に、ヒータ５
８ａが配置されている。真空槽２の外部には電源８０が
配置され、上述したヒータ５８ａは電源８０に接続され
ている。このヒータ５８ａは抵抗発熱体で構成されてお
り、電源８０を起動すると、ヒータ５８ａの両端に電圧
が印加されて電流が流れ、ヒータ５８ａが発熱して容器
３０ａを加熱させられるようになっている。In this way, the evaporation source 3a is supported by the support base 77a 1 ,
In the state of being supported on 77a 2 , there is a gap between the bottom surface of the container 30a and the mounting plate 87, and the heater 5 is placed in the gap.
8a is arranged. A power supply 80 is arranged outside the vacuum chamber 2, and the above-mentioned heater 58 a is connected to the power supply 80. The heater 58a is composed of a resistance heating element, and when the power source 80 is started, a voltage is applied across the heater 58a and a current flows, and the heater 58a generates heat to heat the container 30a. .
【００５１】容器３０ａ内に、蒸発材料４０ａを収容
し、その容器３０ａを真空雰囲気中に配置した状態でヒ
ータ５８ａを発熱させると、容器３０ａが加熱され、容
器３０ａ内の蒸発材料４０ａが加熱され、蒸発材料４０
ａの蒸気が発生する。When the heater 58a is heated while the evaporation material 40a is contained in the container 30a and the container 30a is placed in a vacuum atmosphere, the container 30a is heated and the evaporation material 40a in the container 30a is heated. , Evaporation material 40
Steam of a is generated.
【００５２】蒸発材料４０ａの蒸気の流れを図４の符号
６１に示す。図４は図３のＤ−Ｄ線断面図に相当する図
である。蒸発材料の蒸気６１は、遮蔽板３２ａと放出板
３６ａとの間の隙間を通った後に、貫通孔３８ａから、
取付板８７及び煙突部材７で囲まれた空間内部へと放出
される。The vapor flow of the evaporation material 40a is shown by reference numeral 61 in FIG. FIG. 4 is a view corresponding to a cross-sectional view taken along the line DD of FIG. The vapor 61 of the evaporation material passes through the gap between the shielding plate 32a and the emission plate 36a, and then, from the through hole 38a,
It is discharged into the space surrounded by the mounting plate 87 and the chimney member 7.
【００５３】上述したように、遮蔽板３２ａの縁は、貫
通孔３８ａの縁より外側にはみ出しており、蒸発材料４
０の上方には、遮蔽板３２ａ又は放出板３６ａのいずれ
か一方が配置されており、蒸発材料の蒸気のうち、放出
板３６ａに蒸気が到達すると、その蒸気は、放出板３６
ａに付着する。また、蒸発材料が突沸して液滴の状態で
飛び出すと、その液滴は遮蔽板３２ａに付着する。As described above, the edge of the shielding plate 32a extends outside the edge of the through hole 38a, and the evaporation material 4
One of the shielding plate 32a and the discharge plate 36a is arranged above 0, and when the vapor of the vaporized material reaches the discharge plate 36a, the vapor is discharged.
Attach to a. Further, when the evaporation material bumps and jumps out in a droplet state, the droplet adheres to the shield plate 32a.
【００５４】上述した放出板３６ａと遮蔽板３２ａと取
付部材５１ａとはともにＴａ、Ｆｅ−Ｃｒ、グラファイ
ト、セラミック等の抵抗発熱体で構成され、上述した第
１、第２の電流導入端子７５ａ1、７５ａ2は、導線９５
で電源８０と電気的に接続されており、電源８０を起動
し、第１の電流導入端子７５ａ1に正電圧を印加し、第
２の電流導入端子７５ａ2に負電圧を印加すると、第１
の電流導入端子７５ａ1から放出板３６ａを介して第２
の電流導入端子７５ａ2へと電流が流れ、放出板３６ａ
が発熱する。このため、発熱した放出板３６ａに蒸発材
料の蒸気が到達して蒸発材料が付着しても、その蒸発材
料は放出板３６ａで加熱され、再蒸発するようになって
いる。The emission plate 36a, the shielding plate 32a, and the mounting member 51a described above are all composed of resistance heating elements such as Ta, Fe--Cr, graphite, and ceramics, and the above-described first and second current introduction terminals 75a 1 , 75a 2 is a conductor 95
Is electrically connected to the power source 80 with the power source 80 activated, a positive voltage is applied to the first current introducing terminal 75a 1 and a negative voltage is applied to the second current introducing terminal 75a 2 .
From the current introduction terminal 75a 1 of the second side through the emission plate 36a
Current flows to the current introduction terminal 75a 2 of the discharge plate 36a.
Heats up. Therefore, even if the vapor of the evaporation material reaches the emission plate 36a that has generated heat and the evaporation material adheres, the evaporation material is heated by the emission plate 36a and re-evaporates.
【００５５】こうして放出板３６ａに電流が流れると、
放出板３６ａの貫通孔３８ａの両端に電位差が生じ、こ
の電位差により、放出板３６ａから取付部材５１ａを介
して遮蔽板３２ａにも電流が流れ、遮蔽板３２ａが発熱
する。このため、蒸発材料が突沸により飛散して、遮蔽
板３２ａに付着しても、その蒸発材料は遮蔽板３２ａで
加熱され、蒸発するようになっている。Thus, when a current flows through the emission plate 36a,
A potential difference is generated at both ends of the through hole 38a of the emission plate 36a, and due to this potential difference, a current also flows from the emission plate 36a to the shield plate 32a via the mounting member 51a, and the shield plate 32a generates heat. Therefore, even if the evaporation material is scattered by bumping and adheres to the shield plate 32a, the evaporation material is heated by the shield plate 32a and evaporated.
【００５６】このように、放出板３６ａが発熱して第
１、第２の支持部３３ａ1、３３ａ2が発熱する。このと
き第１、第２の支持部３３ａ1、３３ａ2に接続された第
１、第２の電流導入端子７５ａ1、７５ａ2の温度が過度
に上昇すると不都合が生じるので、支持台７７ａ1、７
７ａ2の内部には図示しない通水管が設けられており、
通水管内に冷却水を通すと、支持台７７ａ1、７７ａ2上
に配置された第１、第２の電流導入端子７５ａ1、７５
ａ2が冷却され、第１、第２の電流導入端子７５ａ1、７
５ａ2に接続された支持台７７ａ1、７７ａ2や導線９５
の温度が上昇しないようになっている。In this way, the emission plate 36a generates heat and the first and second supporting portions 33a 1 and 33a 2 generate heat. At this time, if the temperature of the first and second current introduction terminals 75a 1 and 75a 2 connected to the first and second support portions 33a 1 and 33a 2 rises excessively, inconvenience occurs, so that the support base 77a 1 7
A water pipe (not shown) is provided inside 7a 2 .
When the cooling water is passed through the water pipe, the first and second current introduction terminals 75a 1 and 75a arranged on the support bases 77a 1 and 77a 2 are provided.
a 2 is cooled, and the first and second current introducing terminals 75 a 1 , 7
5a 2 connected to the support bases 77a 1 and 77a 2 and the conductors 95
The temperature does not rise.
【００５７】従来では、第１、第２の電流導入端子７５
ａ1、７５ａ2を冷却すると第１、第２の支持部３３
ａ1、３３ａ2の温度が蓋部３１ａの中央部分の温度より
低くなるため、第１、第２の支持部３３ａ1、３３ａ2の
近傍の蓋部３１ａの両端部に蒸発材料の蒸気が到達する
と、蒸発材料が蓋部３１ａの両端部に析出してしまって
いた。Conventionally, the first and second current introducing terminals 75
When a 1 and 75 a 2 are cooled, the first and second support portions 33
Since the temperatures of a 1 and 33a 2 are lower than the temperature of the central portion of the lid 31a, the vapor of the evaporation material reaches both ends of the lid 31a near the first and second support portions 33a 1 and 33a 2. Then, the evaporation material was deposited on both ends of the lid 31a.
【００５８】上述した第１、第２の支持部３３ａ1、３
３ａ2は、平面が矩形に形成され、厚みは、蓋部３１ａ
の厚みと同じにされ、かつ第１、第２の支持部３３
ａ1、３３ａ2の幅Δａは、蓋部３１ａの幅Δｂより小さ
くされており、第１、第２の支持部３３ａ1、３３ａ2の
電気抵抗は、蓋部３１ａの電気抵抗に比して大きくなっ
ている。このため、電流が流れて発熱すると、第１、第
２の支持部３３ａ1、３３ａ2の単位長さあたりの発熱量
は、蓋部３１ａの単位長さあたりの発熱量に比して大き
くなる。The above-mentioned first and second supporting portions 33a 1 , 3
3a 2 has a rectangular plane and has a thickness of the lid portion 31a.
The thickness of the first and second support portions 33.
The width Δa of a 1 and 33a 2 is smaller than the width Δb of the lid 31a, and the electric resistance of the first and second support portions 33a 1 and 33a 2 is higher than that of the lid 31a. It is getting bigger. Therefore, when a current flows and heat is generated, the heat generation amount per unit length of the first and second support portions 33a 1 and 33a 2 becomes larger than the heat generation amount per unit length of the lid portion 31a. .
【００５９】このため、第１、第２の支持部３３ａ1、
３３ａ2の幅Δａを適当な値にすると、通水管で第１、
第２の電流導入端子７５ａ1、７５ａ2を冷却しても、第
１、第２の支持部３３ａ1、３３ａ2が蓋部３１とほぼ同
じ温度になるようにすることができる。Therefore, the first and second support portions 33a 1 ,
If the width Δa of 33a 2 is set to an appropriate value,
Even if the second current introducing terminals 75a 1 and 75a 2 are cooled, the temperatures of the first and second support portions 33a 1 and 33a 2 can be made to be substantially the same as the temperature of the lid portion 31.
【００６０】このため従来のように、第１、第２の支持
部３３ａ1、３３ａ2や、その近傍の蓋部３１ａの両端部
に蒸発材料の蒸気が付着しても、その部分の温度は低く
ならないので付着した蒸発材料は再び蒸発して蒸気とな
る。従って蒸発材料が蓋部３１ａの両端部に析出するこ
とはなく、貫通孔３８ａのどの位置からも、均一な蒸発
材料の蒸気が放出される。Therefore, even if vapor of the evaporation material adheres to both ends of the first and second support portions 33a 1 and 33a 2 and the lid portion 31a in the vicinity thereof as in the conventional case, the temperature of those portions is still Since it does not become low, the attached evaporation material evaporates again into vapor. Therefore, the vaporized material does not deposit on both ends of the lid 31a, and the vapor of the vaporized material is uniformly discharged from any position of the through hole 38a.
【００６１】真空槽２内部上方には、基板ホルダー４が
設けられており、この基板ホルダー４は、蒸着膜を成膜
する対象である基板５を、その成膜面が鉛直下方を向い
た状態で保持できるように構成されている。A substrate holder 4 is provided above the inside of the vacuum chamber 2, and the substrate holder 4 has a substrate 5 on which a vapor deposition film is to be formed, with its film-forming surface facing vertically downward. It is configured to be held by.
【００６２】以下で、上述した成膜装置１で、基板表面
に有機薄膜を成膜する工程について説明する。予め、中
央に配置された蒸発源３ａの容器３０ａにホスト材料と
なる固体又は液体の蒸発材料を入れ、その容器３０ａの
両側に配置された蒸発源３ｂ、３ｃの容器３０ｂ、３０
ｃに、ドーパント材料になる固体又は液体の蒸発材料を
入れておく。ここでは、ホスト材料となる蒸発材料をＡ
ｌｑ3(８−hydroxyquinoline aluminium)とし、ドーパ
ント材料となる蒸発材料をＤＣＪＴＢ、ルブレン等とす
る。The process of forming an organic thin film on the surface of the substrate with the above-described film forming apparatus 1 will be described below. In advance, a solid or liquid evaporation material to be a host material is put in the container 30a of the evaporation source 3a arranged in the center, and the containers 30b, 30 of the evaporation sources 3b, 3c arranged on both sides of the container 30a.
A solid or liquid evaporation material to be a dopant material is placed in c. Here, the evaporation material serving as the host material is A
lq 3 (8-hydroxyquinoline aluminum), and the evaporation material serving as a dopant material is DCJTB, rubrene, or the like.
【００６３】次に真空排気系を起動し、真空槽２内部を
真空排気する。真空槽２内部の圧力が、真空蒸着に適し
た圧力以下になったら、その状態を維持しながら基板ホ
ルダー４に基板５を保持させ、蒸発装置１０を、図１の
二点鎖線に示すように、真空槽２内の端部に配置してお
く。Next, the vacuum exhaust system is activated to evacuate the inside of the vacuum chamber 2. When the pressure inside the vacuum chamber 2 becomes equal to or lower than the pressure suitable for vacuum vapor deposition, the substrate 5 is held by the substrate holder 4 while maintaining the state, and the evaporation device 10 is moved as shown by the chain double-dashed line in FIG. , Is placed at the end of the vacuum chamber 2.
【００６４】次いで電源８０を起動し、各蒸発源３ａ、
３ｂ、３ｃ内部の蒸発材料４０ａ、４０ｂ、４０ｃを蒸
発させると、蒸発材料４０ａ、４０ｂ、４０ｃの蒸気
は、各蒸発源３ａ、３ｂ、３ｃの各貫通孔３８ａ、３８
ｂ、３８ｃから、煙突部材７と取付板８７とで囲まれた
空間内部に放出される。Then, the power source 80 is started, and each evaporation source 3a,
When the evaporation materials 40a, 40b, 40c inside 3b, 3c are evaporated, the vapor of the evaporation materials 40a, 40b, 40c becomes the through holes 38a, 38 of the evaporation sources 3a, 3b, 3c.
It is discharged from b and 38c into the space surrounded by the chimney member 7 and the mounting plate 87.
【００６５】図５に、煙突部材７及び蒸発源３ａ、３
ｂ、３ｃの位置関係の模式図を示す。各蒸発源３ａ、３
ｂ、３ｃの貫通孔３８ａ、３８ｂ、３８ｃは細長矩形に
形成され、互いに平行に配置されている。また、煙突部
材７のアパーチャー７０は、細長いスリット形状に形成
されており、各貫通孔３８ａ、３８ｂ、３８ｃと互いに
平行になるように配置されている。各貫通孔３８ａ、３
８ｂ、３８ｃから蒸気が放出されると、各蒸気はアパー
チャ７０から真空槽２内部の空間へと放出される。この
とき各蒸気は、いずれも各貫通孔３８ａ、３８ｂ、３８
ｃから均一に放出されており、アパーチャ７０のどの位
置からも均一に放出される。In FIG. 5, the stack member 7 and the evaporation sources 3a, 3 are shown.
The schematic diagram of the positional relationship of b and 3c is shown. Each evaporation source 3a, 3
The through holes 38a, 38b, 38c of b and 3c are formed in elongated rectangles and arranged in parallel with each other. Further, the aperture 70 of the chimney member 7 is formed in an elongated slit shape, and is arranged so as to be parallel to the through holes 38a, 38b, 38c. Each through hole 38a, 3
When steam is discharged from 8b and 38c, each steam is discharged from the aperture 70 into the space inside the vacuum chamber 2. At this time, each of the steams has a corresponding one of the through holes 38a, 38b, 38.
It is uniformly emitted from c and is evenly emitted from any position of the aperture 70.
【００６６】上述した取付板８７は、図示しない棒など
の移動機構に固定されており、アパーチャ７０から真空
槽２内部へと放出される蒸発材料の蒸気が安定したら、
移動機構を動作させると、蒸発装置１０は図１の二点鎖
線で示した位置から、アパーチャー７０の長手方向と垂
直な方向８８に移動し、その結果、アパーチャ７０は基
板ホルダー４の下方を通過する。The above-mentioned mounting plate 87 is fixed to a moving mechanism such as a rod (not shown), and when the vapor of the evaporation material discharged from the aperture 70 into the vacuum chamber 2 becomes stable,
When the moving mechanism is operated, the evaporation device 10 moves from the position shown by the chain double-dashed line in FIG. 1 in the direction 88 perpendicular to the longitudinal direction of the aperture 70, and as a result, the aperture 70 passes below the substrate holder 4. To do.
【００６７】基板５の成膜面の下方位置には、開口６０
を備えたマスク６が配置されており、アパーチャ７０が
基板５の下方に移動し、アパーチャ７０から放出された
蒸発材料の蒸気が、開口６０を介して基板５の成膜面に
到達すると、成膜面に蒸発材料が付着し、有機薄膜が成
長する。アパーチャ７０が基板ホルダ４の下方を通過す
る際に、アパーチャ７０の両端部は、基板５の両端から
はみ出しており、アパーチャ７０は基板５の領域全部を
通過するので、マスクの開口６０から露出する基板５の
成膜面の全てに蒸気が到達し、有機薄膜が成膜される。An opening 60 is provided below the film formation surface of the substrate 5.
When the mask 70 having the above is arranged and the aperture 70 moves below the substrate 5 and the vapor of the vaporized material discharged from the aperture 70 reaches the film formation surface of the substrate 5 through the opening 60, the film is formed. The evaporation material adheres to the film surface, and the organic thin film grows. When the aperture 70 passes under the substrate holder 4, both ends of the aperture 70 protrude from both ends of the substrate 5, and since the aperture 70 passes through the entire region of the substrate 5, it is exposed from the opening 60 of the mask. The vapor reaches all the film formation surfaces of the substrate 5 to form an organic thin film.
【００６８】こうして蒸発装置１０は、蒸発材料の蒸気
をアパーチャー７０から放出しながら、基板５の下方で
一回往復移動をし、基板５の成膜面に、蒸発材料からな
る有機薄膜が成膜される。In this way, the evaporation device 10 reciprocates once below the substrate 5 while discharging the vapor of the evaporation material from the aperture 70, and an organic thin film made of the evaporation material is formed on the film formation surface of the substrate 5. To be done.
【００６９】上述したように、蒸発材料の蒸気は、アパ
ーチャ７０から均一に放出されるので、その蒸気は基板
５の成膜面に均一に到達する。その結果、成膜面に成膜
される有機薄膜の膜厚が均一になる。As described above, since the vapor of the evaporation material is uniformly emitted from the aperture 70, the vapor reaches the film formation surface of the substrate 5 uniformly. As a result, the film thickness of the organic thin film formed on the film formation surface becomes uniform.
【００７０】なお、上述した実施形態では、第１、第２
の支持部３３ａ1、３３ａ2の幅Δａを、蓋部３１ａの幅
Δｂに比して狭くした蒸発源３ａについて説明したが、
本発明の蒸発源はこれに限られるものではなく、例えば
図６の符号８１ａに示す蒸発源のように、第１、第２の
支持部３３ａ1、３３ａ2と蓋部３１ａの幅を等しくし、
かつ第１、第２の支持部３３ａ1、３３ａ2の厚みΔｄ
を、蓋部の厚みΔｃに比して薄くした放出板４６ａを用
いてもよい。このように構成しても、第１、第２の支持
部３３ａ1、３３ａ2の電気抵抗は蓋部３１ａの電気抵抗
に比して大きくなるので、単位長さあたりの発熱量は、
第１、第２の支持部３３ａ1、３３ａ2のほうが蓋部３１
ａに比して大きくなる。従って、放出板４６ａでは、図
３の蒸発源３ａと同様に第１、第２の支持部３３ａ1、
３３ａ2と、蓋部３１ａの両端部における温度低下がな
く、蒸発材料が析出しなくなる。In the above-described embodiment, the first and second
The evaporation source 3a in which the width Δa of the supporting portions 33a 1 and 33a 2 is narrower than the width Δb of the lid portion 31a has been described.
The evaporation source of the present invention is not limited to this. For example, like the evaporation source indicated by reference numeral 81a in FIG. 6, the first and second support portions 33a 1 and 33a 2 and the lid portion 31a have the same width. ,
And the thickness Δd of the first and second support portions 33a 1 and 33a 2 .
It is also possible to use the emission plate 46a whose thickness is smaller than the thickness Δc of the lid portion. Even with this configuration, the electrical resistance of the first and second support portions 33a 1 and 33a 2 is greater than the electrical resistance of the lid portion 31a, so the amount of heat generated per unit length is
The first and second support portions 33a 1 and 33a 2 are the lid portions 31.
It becomes larger than a. Therefore, in the emission plate 46a, like the evaporation source 3a of FIG. 3, the first and second support portions 33a 1 ,
There is no temperature drop at 33a 2 and both ends of the lid 31a, and the evaporation material does not precipitate.
【００７１】また、第１、第２の支持部３３ａ1、３３
ａ2の幅や厚みを、蓋部３１ａの幅や厚みと同じにし、
熱反射板７１ａ1、７１ａ2を設けてもよい。図７(ａ)、
(ｂ)、図８の符号８３ａに、その蒸発源の一例を示す。
図８は蒸発源８３ａの平面図を示しており、図７(ａ)、
(ｂ)はそのＥ−Ｅ線断面図に対応している。Further, the first and second support portions 33a 1 and 33a
Make the width and thickness of a 2 the same as the width and thickness of the lid 31a,
The heat reflection plates 71a 1 and 71a 2 may be provided. 7 (a),
(b), reference numeral 83a in FIG. 8 shows an example of the evaporation source.
FIG. 8 shows a plan view of the evaporation source 83a, and FIG.
(b) corresponds to the EE line sectional view.
【００７２】この熱反射板７１ａ1、７１ａ2は、図８に
示すように矩形の板であって、熱を反射する材料で構成
されている。ここでは熱反射板７１ａ1、７１ａ2として
Ｔａ等の高融点金属が用いられている。この熱反射板７
１ａ1、７１ａ2は、第１、第２の支持部３３ａ1、３３
ａ2の上方に配置されている。The heat reflecting plates 71a 1 and 71a 2 are rectangular plates as shown in FIG. 8 and are made of a material that reflects heat. Here, a refractory metal such as Ta is used as the heat reflection plates 71a 1 and 71a 2 . This heat reflector 7
1a 1 and 71a 2 are the first and second supporting portions 33a 1 and 33a.
It is located above a 2 .
【００７３】このように構成すると、図７(ｂ)に示すよ
うに、第１、第２の支持部３３ａ1、３３ａ2から発せら
れた熱５４の一部は、熱反射板７１ａ1、７１ａ2でそれ
ぞれ反射されて、再び第１、第２の支持部３３ａ1、３
３ａ2に返される。このため、支持台７７ａ1、７７ａ2
で第１、第２の電流導入端子７５ａ1、７５ａ2を冷却し
ても、第１、第２の支持部３３ａ1、３３ａ2や蓋部３１
ａの両端の温度は低下しすぎないので、蒸発材料が析出
することはない。With this structure, as shown in FIG. 7B, a part of the heat 54 emitted from the first and second support portions 33a 1 and 33a 2 is part of the heat reflection plates 71a 1 and 71a. The second and third supporting portions 33a 1 and 3a 3
Returned to 3a 2 . Therefore, the supports 77a 1 and 77a 2
Even if the first and second current introduction terminals 75a 1 and 75a 2 are cooled by the above, the first and second support portions 33a 1 and 33a 2 and the lid portion 31
Since the temperature at both ends of a does not drop too much, the evaporation material does not precipitate.
【００７４】また、上述の実施の形態においては、蒸発
装置を移動させてアパーチャーを移動させるようにした
が、本発明はこれに限られず、基板側を移動させるよう
にすることも可能である。Further, in the above-mentioned embodiment, the evaporation device is moved to move the aperture, but the present invention is not limited to this, and it is also possible to move the substrate side.
【００７５】また、上述の実施の形態においては、３個
の蒸発源３ａ、３ｂ、３ｃを平行に配設したが、２個又
は４個以上の蒸発源を平行に配設してもよいし、１個の
蒸発源のみを配設するように構成してもよい。In the above embodiment, the three evaporation sources 3a, 3b and 3c are arranged in parallel, but two or four or more evaporation sources may be arranged in parallel. You may comprise so that only one evaporation source may be arrange | positioned.
【００７６】また、熱反射板としてＴａ等の高融点金属
を用いたが、本発明はこれに限られるものではなく、熱
を反射できる材料であればよく、例えばステンレス鋼を
用いてもよい。Although a high melting point metal such as Ta is used as the heat reflecting plate, the present invention is not limited to this, and any material capable of reflecting heat, for example, stainless steel may be used.
【００７７】[0077]
【発明の効果】膜厚が均一で、膜質の良好な有機薄膜を
成膜することができる。The organic thin film having a uniform film thickness and good film quality can be formed.
【図１】本発明の一実施形態に係る真空蒸着装置の第一
の断面図FIG. 1 is a first sectional view of a vacuum vapor deposition device according to an embodiment of the present invention.
【図２】(ａ)：本発明の一実施形態に係る真空蒸着装置
の第二の断面図
(ｂ)：本発明の一実施形態の煙突部材を説明する平面図FIG. 2A is a second cross-sectional view of the vacuum vapor deposition device according to the embodiment of the present invention, and FIG. 2B is a plan view illustrating the chimney member of the embodiment of the present invention.
【図３】本発明の一実施形態に係る蒸発源を説明する平
面図FIG. 3 is a plan view illustrating an evaporation source according to an embodiment of the present invention.
【図４】本発明の一実施形態に係る蒸発源において蒸発
材料が蒸発する状態を説明する断面図FIG. 4 is a cross-sectional view illustrating a state in which an evaporation material is evaporated in the evaporation source according to the embodiment of the present invention.
【図５】本発明の一実施形態に係る蒸発源及びアパーチ
ャーとマスクとの位置関係を示す説明図FIG. 5 is an explanatory diagram showing a positional relationship between an evaporation source and an aperture and a mask according to an embodiment of the present invention.
【図６】本発明の他の実施形態に係る蒸発源を説明する
断面図FIG. 6 is a sectional view illustrating an evaporation source according to another embodiment of the present invention.
【図７】（ａ）：本発明のその他の実施形態に係る蒸発
源を説明する断面図
（ｂ）：本発明のその他の実施形態に係る蒸発源の動作
を説明する断面図7A is a sectional view illustrating an evaporation source according to another embodiment of the present invention. FIG. 7B is a sectional view illustrating an operation of an evaporation source according to another embodiment of the present invention.
【図８】本発明のその他の実施形態に係る蒸発源を説明
する平面図FIG. 8 is a plan view illustrating an evaporation source according to another embodiment of the present invention.
【図９】従来の真空蒸着装置を説明する第一の断面図FIG. 9 is a first sectional view illustrating a conventional vacuum vapor deposition device.
【図１０】（ａ）：従来の真空蒸着装置を説明する第二
の断面図
（ｂ）：従来の煙突部材を説明する平面図10A is a second cross-sectional view illustrating a conventional vacuum vapor deposition device, and FIG. 10B is a plan view illustrating a conventional chimney member.
【図１１】従来の蒸発源を説明する平面図FIG. 11 is a plan view illustrating a conventional evaporation source.
１…真空蒸着装置 ２…真空槽 ３ａ、３ｂ、３ｃ
…蒸発源 ３１…蓋部
３２…遮蔽板 ４０…蒸発材料 ５１…取付部材 ７５
1、７５2…電流導入端子1 ... Vacuum deposition apparatus 2 ... Vacuum tank 3a, 3b, 3c
... evaporation source 31 ... lid part 32 ... shield plate 40 ... evaporation material 51 ... mounting member 75
1 , 75 2 ... Current introduction terminal
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3K007 AB18 DB03 FA01 4K029 AA24 BA62 BC07 BD00 CA01 DA10 DB06 DB12 DB14 DB18 DB23 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3K007 AB18 DB03 FA01 4K029 AA24 BA62 BC07 BD00 CA01 DA10 DB06 DB12 DB14 DB18 DB23
Claims (4)
る貫通孔と、 前記蓋部と前記蒸発材料との間に配置された遮蔽板と、 前記遮蔽板を前記蓋部に取り付ける取付部材と、 前記容器の外部に配置され、電圧が印加される第１、第
２の電流導入端子と、 前記第１、第２の電流導入端子と前記蓋部の両端とをそ
れぞれ接続する第１、第２の支持部とを有し、 電流の流れる方向に対する単位長さあたりの発熱量は、
前記第１、第２の支持部の方が、前記蓋部に比して大き
いことを特徴とする蒸発源。1. A container in which an elongated opening is formed, an evaporation material arranged in the container, a lid portion arranged on the opening and covering the opening, a lid provided in the lid portion, the container A through-hole connecting the inside and the outside of the container, a shield plate arranged between the lid portion and the evaporation material, an attachment member for attaching the shield plate to the lid portion, and arranged outside the container. , First and second current introducing terminals to which a voltage is applied, and first and second supporting portions respectively connecting the first and second current introducing terminals and both ends of the lid portion. , The amount of heat generated per unit length in the direction of current flow is
The evaporation source, wherein the first and second support parts are larger than the lid part.
の幅に比して小さくされた請求項１記載の蒸発源。2. The evaporation source according to claim 1, wherein the width of the first and second support portions is smaller than the width of the lid portion.
部の厚みに比して小さくされた請求項１記載の蒸発源。3. The evaporation source according to claim 1, wherein the thickness of the first and second support portions is smaller than the thickness of the lid portion.
る貫通孔と、 前記蓋部と前記蒸発材料との間に配置された遮蔽板と、 前記遮蔽板を前記蓋部に取り付ける取付部材と、 前記容器の外部に配置され、電圧が印加される第１、第
２の電流導入端子と、 前記第１、第２の電流導入端子と前記蓋部の両端とをそ
れぞれ接続する第１、第２の支持部と、 前記第１、第２の支持部から発せられる熱を反射させて
前記第１、第２の支持部に返す熱反射装置を有する蒸発
源。4. A container having an elongated opening, an evaporation material arranged in the container, a lid part arranged on the opening and covering the opening, and a container provided on the lid part. A through hole connecting the inside and the outside of the container, a shield plate arranged between the lid portion and the evaporation material, an attachment member for attaching the shield plate to the lid portion, and arranged outside the container. A first and a second current introduction terminal to which a voltage is applied; first and second support portions respectively connecting the first and second current introduction terminals and both ends of the lid portion; An evaporation source having a heat reflection device that reflects heat emitted from the first and second support portions and returns the heat to the first and second support portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001349646A JP4004777B2 (en) | 2001-11-15 | 2001-11-15 | Evaporation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001349646A JP4004777B2 (en) | 2001-11-15 | 2001-11-15 | Evaporation source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003147510A true JP2003147510A (en) | 2003-05-21 |
| JP4004777B2 JP4004777B2 (en) | 2007-11-07 |
Family
ID=19162284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001349646A Expired - Fee Related JP4004777B2 (en) | 2001-11-15 | 2001-11-15 | Evaporation source |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005029839A (en) * | 2003-07-11 | 2005-02-03 | Ulvac Japan Ltd | Evaporation container, evaporation source and vacuum deposition method |
| JP2008174816A (en) * | 2007-01-22 | 2008-07-31 | Sony Corp | Vapor deposition system, vapor deposition method, organic light emitting device and display |
| JP2008274322A (en) * | 2007-04-26 | 2008-11-13 | Sony Corp | Vapor deposition apparatus |
| WO2009125496A1 (en) * | 2008-04-11 | 2009-10-15 | 東芝三菱電機産業システム株式会社 | Heat equalizer |
| WO2015165207A1 (en) * | 2014-04-30 | 2015-11-05 | 京东方科技集团股份有限公司 | Crucible |
| CN105970159A (en) * | 2016-07-15 | 2016-09-28 | 京东方科技集团股份有限公司 | Shield fixing device, vapor deposition chamber and vapor deposition facility |
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005029839A (en) * | 2003-07-11 | 2005-02-03 | Ulvac Japan Ltd | Evaporation container, evaporation source and vacuum deposition method |
| JP2008174816A (en) * | 2007-01-22 | 2008-07-31 | Sony Corp | Vapor deposition system, vapor deposition method, organic light emitting device and display |
| JP2008274322A (en) * | 2007-04-26 | 2008-11-13 | Sony Corp | Vapor deposition apparatus |
| US8724973B2 (en) | 2008-04-11 | 2014-05-13 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heat equalizer |
| KR101196564B1 (en) | 2008-04-11 | 2012-11-01 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | Heat equalizer |
| JP5226773B2 (en) * | 2008-04-11 | 2013-07-03 | 東芝三菱電機産業システム株式会社 | Soaking equipment |
| WO2009125496A1 (en) * | 2008-04-11 | 2009-10-15 | 東芝三菱電機産業システム株式会社 | Heat equalizer |
| US9428831B2 (en) | 2008-04-11 | 2016-08-30 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heat equalizer |
| US9428832B2 (en) | 2008-04-11 | 2016-08-30 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Heat equalizer |
| WO2015165207A1 (en) * | 2014-04-30 | 2015-11-05 | 京东方科技集团股份有限公司 | Crucible |
| US10113227B2 (en) | 2014-04-30 | 2018-10-30 | Boe Technology Group Co., Ltd. | Crucible |
| CN105970159A (en) * | 2016-07-15 | 2016-09-28 | 京东方科技集团股份有限公司 | Shield fixing device, vapor deposition chamber and vapor deposition facility |
| JP2021021116A (en) * | 2019-07-29 | 2021-02-18 | キヤノントッキ株式会社 | Nozzle unit, crucible, vapor deposition source, and vapor deposition apparatus |
| JP7409799B2 (en) | 2019-07-29 | 2024-01-09 | キヤノントッキ株式会社 | Nozzle unit, crucible, evaporation source and evaporation equipment |
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