JP2003143482A - Solid-state electric image pickup device and driving method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a moving image and a still image in which the effect of smear is suppressed while suppressing power consumption. SOLUTION: In a frame interline solid-state electronic image pickup device provided with an image pickup region 2 and a storage region 10, a first horizontal transfer path 13 for a still picture is provided above the region 2, and a second horizontal transfer path 15 for a moving picture is provided below the region 10. At still picture photographing, a mechanical shutter is used to control exposure. Signal electric charges for a still picture are outputted from the region 2 through the path 13. Signal charges for a moving picture are transferred from the region 2 to the region 10, and are outputted through the path 15. At the time of a moving picture, smear electric charges are swept out to the region 10 at a high speed, and the effect of smear can be suppressed. When the signal electric charges of a still picture are outputted, driving of the region 10 is stopped to suppress the power consumption.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a solid-state electronic image pickup device and a driving method thereof.

[0002]

BACKGROUND OF THE INVENTION At present, a digital movie / still camera capable of recording both movie recording and still recording (a digital still camera capable of movie recording, a digital movie camera capable of still recording, etc.) Has been released.

In a digital movie / still camera, when an interline CCD is used as an image pickup element, a mechanical shutter can be used to shield the light during still recording, so the influence of smear can be suppressed. However, since the mechanical shutter cannot be used during movie recording, the smear effect is relatively large.
Therefore, if the frame interline CCD is used for a digital movie / still camera, the influence of smear can be suppressed even during movie recording. This is because the frame interline CCD has an image pickup region and a light-shielding storage region, and can transfer the signal charges stored in the photodiodes of the image pickup region to the storage region at high speed.

However, since the frame interline CCD has a storage area, it is necessary to drive this storage area. For this reason, power consumption increases.

[0005]

DISCLOSURE OF THE INVENTION An object of the present invention is to make it possible to suppress the influence of smear and power consumption in both movie recording and still recording.

In the solid-state electronic image pickup device according to the present invention, a large number of photoelectric conversion elements arranged in the horizontal direction and the vertical direction, and a signal stored in the photoelectric conversion element arranged adjacent to each column of the photoelectric conversion elements. Imaging area having a plurality of first vertical transfer paths for selectively vertically transferring charges in a positive or reverse direction, and signal charges vertically transferred in a reverse direction through the plurality of first vertical transfer paths of the imaging area A horizontal transfer path for transferring the image in the horizontal direction, and the plurality of first horizontal transfer paths in the imaging area.
An accumulation area having a plurality of second vertical transfer paths for further vertically transferring the signal charges vertically transferred in the positive direction through the vertical transfer path, and a plurality of the second vertical transfer paths in the accumulation area. A second horizontal transfer path for horizontally transferring the signal charges vertically transferred in the positive direction is provided.

The present invention also provides a driving method suitable for the solid-state electronic image pickup device. That is, this method uses a plurality of photoelectric conversion elements arranged in the horizontal and vertical directions,
And an imaging region having a plurality of first vertical transfer paths that are arranged adjacent to each column of the photoelectric conversion elements and vertically transfer the signal charges accumulated in the photoelectric conversion elements, and the first of the imaging regions. In the solid-state electronic imaging device having a storage region having a plurality of second vertical transfer paths for further vertically transferring the signal charges vertically transferred in the vertical transfer paths A first horizontal transfer path that enables vertical transfer in a forward or reverse direction selectively and horizontally transfers the signal charges vertically transferred in the reverse direction through the plurality of first vertical transfer paths in the imaging region. And a second horizontal transfer path for horizontally transferring the signal charges vertically transferred in the positive direction through the plurality of second vertical transfer paths of the storage area, and the second horizontal transfer path of the imaging area is provided in response to a still image recording command. Accumulated in the above photoelectric conversion element Controlling the plurality of first vertical transfer paths and the first horizontal transfer path to output the generated signal charges through the plurality of first vertical transfer paths and the first horizontal transfer path, The signal charges accumulated in the photoelectric conversion element in the imaging area according to a moving image recording command are transferred through the plurality of first vertical transfer paths, the plurality of second vertical transfer paths and the second horizontal transfer path. The plurality of first vertical transfer paths, the plurality of second vertical transfer paths, and the second horizontal transfer paths are controlled so as to be output.

According to the present invention, the plurality of first vertical transfer paths included in the image pickup area can vertically transfer the signal charges in the forward and reverse directions. A first horizontal transfer path is provided on the output side in the opposite direction of the plurality of first vertical transfer paths. The signal charges vertically transferred in the reverse direction through the plurality of first vertical transfer paths are horizontally transferred through the first horizontal transfer paths and output. The signal charges vertically transferred in the positive direction through the first vertical transfer path are further vertically transferred in the positive direction through the second vertical transfer path included in the storage region. A second horizontal transfer path is provided on the positive output side of the second vertical transfer path. The signal charges vertically transferred in the positive direction through the first and second vertical transfer paths are horizontally transferred through the second horizontal transfer path and output.

Since the first horizontal transfer path and the second horizontal transfer path are provided, the signal charge accumulated in the photoelectric conversion element included in the image pickup area is transferred to the first horizontal transfer path or the first horizontal transfer path. It can be output from any of the two horizontal transfer paths.

In response to a still image recording command, the signal charges accumulated in the photoelectric conversion element are reversely transferred through the first vertical transfer path and output from the first horizontal transfer path,
A video signal for a still image can be obtained. In the case of still image recording, a mechanical shutter can be used, so the effect of smear can be suppressed. Also, when a still recording command is given, the second
Since the vertical transfer path is not used, the operation of the second vertical transfer path can be stopped. Therefore, power consumption can be suppressed.

In response to a moving image recording command, the signal charges accumulated in the photoelectric conversion element are transferred to the plurality of first vertical transfer paths,
By outputting from the plurality of second vertical transfer paths and the second horizontal transfer path, the signal charge accumulated in the photoelectric conversion element in the imaging region is rapidly transferred from the first vertical transfer path to the first vertical transfer path. It is possible to transfer to two vertical transfer paths. Since the signal charges are transferred at high speed to the second vertical transfer path that is shielded from light, the influence of smear can be suppressed.

In this way, it is possible to obtain a still image and a moving image in which the influence of smear is suppressed and also to reduce the power consumption.

In order to perform the above-mentioned operation, a reverse transfer pulse for vertically transferring the signal charge accumulated in the photoelectric conversion element in the image pickup region in the reverse direction in response to a still image recording command is applied to the plurality of first transfer pulses. It may further include a first drive circuit which is applied to the vertical transfer path and stops the transfer pulse to the plurality of second vertical transfer paths.

A first conversion circuit that amplifies the signal charges horizontally transferred through the first horizontal transfer path by using a first amplification factor and converts the signal charges into a video signal, and the second horizontal transfer path is horizontal. A second conversion circuit that amplifies the transferred signal charges by using an amplification factor larger than the first amplification factor and converts the signal charges into a video signal may be further provided.

When recording a moving image, unlike the still image, the stroboscopic light emitting device cannot be used. As described above, when the signal charge for a still image is output from the first horizontal transfer path and the signal charge for a moving image is output from the second horizontal transfer path, when the object is dark, a moving image is displayed. The amount of the signal charge for use is small, and the converted video signal level also becomes low. Second output of signal charge for moving image
The first horizontal transfer path is connected to the first horizontal transfer path.
A second conversion circuit having an amplification factor larger than that of the conversion circuit is connected. The video signal level for the moving image output from the second conversion circuit can be increased. A bright moving image can be obtained even for a relatively dark subject.

The second horizontal transfer path includes a plurality of second horizontal transfer paths.
The signal charges vertically transferred from a part of the vertical transfer path may be transferred in the horizontal direction.

The signal charges output from the second horizontal transfer path are for moving images. Even if the moving image has a relatively low image quality, it can be viewed. Therefore, the pixel charges in the horizontal direction can be thinned by horizontally transferring the signal charges vertically transferred from the second vertical transfer paths, which are some of the plurality of second vertical transfer paths. . Since the number of pixels in the horizontal direction is reduced, the output time can be shortened. Even if the output time is not shortened, the frequency of the horizontal transfer pulse given to the second horizontal transfer path can be delayed.

Unnecessary charges accumulated in the plurality of first vertical transfer paths when the photoelectric conversion element is shielded by the mechanical shutter means for shielding the photoelectric conversion element in the image pickup area are stored in the accumulation area. A second drive circuit that drives the plurality of first vertical transfer paths so as to transfer to the plurality of second vertical transfer paths, and the second drive circuit causes the unnecessary charges to be transferred to the second vertical transfer path. It is preferable to further include a transfer gate for shifting the signal charge accumulated in the photoelectric conversion element to the first vertical transfer path in response to being transferred to the path.

Unnecessary charges can be transferred from the first vertical transfer path to the second vertical transfer path at high speed. Therefore, the signal charge accumulated in the photoelectric conversion element is
The vertical transfer path can be quickly shifted. If the signal charge accumulated in the photoelectric conversion element is not rapidly shifted to the first vertical transfer path, the signal charge accumulated in the photoelectric conversion element leaks due to thermal diffusion. It is possible to suppress the leakage of signal charges (reduction in the level of video signals) due to thermal diffusion.

The number of the plurality of first vertical transfer paths in the storage area may be smaller than the number of the plurality of first vertical transfer paths in the imaging area. In this case, for the first vertical transfer path without the corresponding second vertical transfer path, the signal charge discharging drain will be formed at the output portion of the vertical transfer in the positive direction.

Even in this way, pixel thinning in the horizontal direction can be realized. Moreover, the second area included in the storage area
Since the number of vertical transfer paths is reduced, the area of the storage region is reduced. The number of solid-state electronic image pickup devices that can be produced from one wafer also increases.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a solid-state electronic image sensor according to an embodiment of the present invention.

The solid-state electronic image pickup device 1 is a frame interline transfer type CCD. The solid-state electronic image pickup device 1 is used, for example, as an image pickup device of a digital still camera capable of movie recording. It is assumed that the digital still camera is provided with a mechanical shutter (not shown) for recording a still image.

The solid-state electronic image pickup device 1 has an image pickup region 2 for picking up an image of a subject and obtaining a signal charge corresponding to the amount of incident light.
And an accumulation area 10 for accumulating the signal charges obtained by the imaging area 2.

On the upper side of the image pickup area 2, a first horizontal transfer path 13 for transferring the signal charges in the horizontal direction according to the applied horizontal transfer clock pulse φH1 is provided.
The output side of the first horizontal transfer path 13 has a first FDA (floating diffusion amplifier) 14
Are connected. As will be described later, the first FDA 14 outputs a still video signal representing a still image.

Below the storage region 10, there is provided a second horizontal transfer path 15 for transferring signal charges in the horizontal direction in accordance with the applied horizontal transfer clock pulse φH2.
The second FDA 16 is connected to the output side of the second horizontal transfer path 15. As described later, the second FDA 16 outputs a movie video signal representing a movie image.

Further, the conversion coefficient of the second FDA 16 is set to be larger than the conversion coefficient (amplification factor) of the first FDA 14. This makes it possible to use the strobe when obtaining a still image, but cannot use the strobe when obtaining a movie image, so that the level of the movie image signal can be made higher than the level of the still image signal. Because.

In the image pickup area 2, a large number of photodiodes 3 are arranged in the row direction (horizontal direction) and the column direction (vertical direction). Plural first vertical transfer paths 4 are arranged adjacent to each column of the photodiodes 3. First
A vertical transfer electrode 5 is formed on the vertical transfer path 4 and is shielded from light. Positive transfer pulse φ to the vertical transfer electrode 5
By applying VIn, the signal charges are vertically transferred in the positive direction (downward). Further, by applying the reverse transfer pulse φVIn to the vertical transfer electrode 5, the signal charges are vertically transferred in the reverse direction (upward). A transfer gate 6 for shifting the signal charges accumulated in the photodiode 3 to the first vertical transfer path 4 is formed between the photodiode 3 and the first vertical transfer path 4.

The storage area 10 is provided with a plurality of second vertical transfer paths 11 corresponding to the first vertical transfer paths 4 included in the imaging area 2. A vertical transfer electrode 12 is formed on the second vertical transfer path 11 and is shielded from light. By applying the transfer pulse φVSn to the vertical transfer electrode 12, the signal charges are transferred in the positive vertical direction.

The various pulses described above are given from the drive circuit 18.

The signal charge accumulated in the photodiode 3 is shifted to the first vertical transfer path 4 by applying the field shift pulse FS to the transfer gate 6. If it is a signal charge for a still image, a reverse transfer pulse φVIn is applied to the first vertical transfer path 4,
The signal charge is transferred in the opposite direction. The signal charge is the first
Input from the vertical transfer path 4 to the first horizontal transfer path 13. The signal charges are horizontally transferred in the first horizontal transfer path 13, converted by the first FDA 14 into a still video signal, and output.

If the signal charge accumulated in the photodiode 3 is for a movie image, a transfer pulse φVIn for the positive direction is given to the first vertical transfer path 4. The signal charges are transferred in the positive direction through the first vertical transfer path 4 and are transferred to the second vertical transfer path 4.
Input to the vertical transfer path 11. The signal charge is further vertically transferred in the positive direction in the second vertical transfer path 11 and is input to the second horizontal transfer path 15. The signal charge is transferred to the second horizontal transfer path 15
Is horizontally transferred and is output as a movie video signal from the second FDA 16.

FIG. 2 is a time chart for movie shooting.

The movie shooting is periodically performed every 1V (1V is one vertical scanning period). When movie shooting is performed, the mechanical shutter is open. In addition, since the movie image can withstand viewing even if the number of pixels is relatively small, pixel thinning is performed in the vertical direction. In this embodiment, pixel thinning is performed to 1/4 in the vertical direction. Therefore, the signal charge accumulated in the photodiodes 3 for every 4n + 1 (n is an integer of 0 or more) rows is first for each 1V.
The field shift pulse FS is applied to the transfer gate 6 so that the field shift pulse FS is shifted to the vertical transfer path 4.

During movie shooting, the horizontal transfer pulse φH1 is not applied to the first horizontal transfer path 13 for still images, and the first horizontal transfer path 13 is stopped. In addition, a horizontal transfer pulse φH is applied to the second horizontal transfer path 15 for movie images.
2 is given and is in a driving state.

During the period from time t10 to t11, the overflow drain (not shown) in the imaging region 2 overflows.
By applying the drain pulse, the unnecessary charges accumulated in the photodiode 3 are swept out. At time t11, the exposure of the photodiode 3 for the movie image starts. At time t13, the transfer gate 6 corresponding to the photodiode 3 in the (4n + 1) th row receives a field
By applying the shift pulse FS, the exposure of the photodiode 3 is completed (exposure time Δt1).

From time t12 immediately before the end of exposure to time t
Up to 13, the positive vertical transfer pulse φVIn is applied to the first vertical transfer path 4 of the imaging region 3, and the smear charge accumulated in the first vertical transfer path 4 is transferred in the positive direction at high speed in the vertical direction. To be made. Accumulation area 10 between time t12 and time t13
The vertical transfer pulse φVSn is also applied to the second vertical transfer path 11 and the smear charges transferred through the first vertical transfer path 4 are transferred at high speed. After that, the smear charge becomes
It is output via the second horizontal transfer path 15.

At the time t13, the signal charge for the movie image, which is shifted from the photodiode 3 of the 4n + 1th row to the first vertical transfer path 4, is the first vertical transfer path 4 from the time t13 to the time t14. High-speed transfer to the second vertical transfer path 11 via. Since the signal charges are quickly transferred to the light shielding area, it is possible to suppress the influence of smear. After that, by the time t15, the movie signal charges for movie are transferred to the second horizontal transfer path 15 row by row. The movie video signal will be output from the second FDA 16.

FIG. 3 is a time chart when the still picture is taken.

At time t16, an overflow drain pulse is applied and the signal charges accumulated in all the photodiodes 3 are discharged. The mechanical shutter is gradually closed from time t17. At time t18, the photodiode 3 is completely closed and is shielded from light. At the time of being shielded from light, the photodiode 3 accumulates the signal charges for the still image obtained by the exposure (exposure time Δt2).

By the time t19, the vertical transfer pulse φVIn in the reverse direction is applied to the first vertical transfer path 4 and the unnecessary charges accumulated in the first vertical transfer path 4 are transferred in the reverse direction. Unnecessary charges are discharged from the first vertical transfer path 4 and discharged from the first horizontal transfer path 13. When unnecessary charges are discharged, all transfer gates 6 at time t20.
A field shift pulse FS is applied to the first vertical transfer path 4 and the signal charge for the still image is shifted to the first vertical transfer path 4.

A reverse vertical transfer pulse φVIn is applied to the first vertical transfer path 4. The signal charge for the still image is transferred in the reverse direction through the first vertical transfer path 4, and
To the horizontal transfer path 13 of. A horizontal transfer pulse φH1 is applied to the first horizontal transfer path 13, and a still video signal is output from the first FDA 14.

FIG. 4 is a time chart showing another embodiment at the time of shooting still images.

In the process shown in FIG. 3, the signal charges accumulated in the first vertical transfer path 4 are transferred in the reverse direction and discharged in the same manner as the signal charges for the still image, but in the positive direction. It may be transferred to and discharged. The process of transferring and discharging the unnecessary charges in the positive direction is shown in FIG.

When the exposure is completed at the time t31 and the mechanical shutter is completely closed at the time t32, the photodiode 3 is in a state where the signal charge obtained by the exposure is accumulated. First vertical transfer path 4
A positive vertical transfer pulse φVIn is applied to the second vertical transfer path 11 to transfer unnecessary charges to the second vertical transfer path 11. When unnecessary charges are transferred from the first vertical transfer path 4, time t34
Field shift to all transfer gates 6 at
The pulse FS is given and the signal charge for the still image is the first
Is shifted to the vertical transfer path 4. After that, the still image signal charge is output via the first vertical transfer path 4 and the first horizontal transfer path 13, and the still image signal is output from the first FDA 14 in the case shown in FIG. Is the same as.

In the processing shown in FIG. 4, since the time for discharging the signal charges accumulated in the first vertical transfer path 4 is shortened, the signal charges for the still image accumulated in the photodiode 3 are output. The time until is also shortened. When the time during which the signal charge is accumulated in the photodiode 3 becomes long, the signal charge leaks due to so-called thermal saturation diffusion. However, since the time for outputting the signal charge from the photodiode 3 can be shortened, the influence of thermal saturation diffusion is reduced. Can be reduced.

When actually tested, a C of 2 million pixels
When the signal charges accumulated in the first vertical transfer path 4 by the CD are discharged at high speed as shown in FIG. 4, 10H (1H
Is less than one horizontal scanning period). In the process shown in FIG. 3, the voltage level output as the still video signal is 4
Although it dropped to about 80 mV, the voltage level output as a still video signal was about 530 mV in the process shown in Fig. 4, and it was possible to suppress the level drop.

FIG. 5 shows another embodiment, and shows a part of the structure of the solid-state electronic image pickup device. The solid-state electronic image pickup device shown in FIG. 5 is capable of thinning out a movie image in the horizontal direction.

In this figure, the same parts as those shown in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.

The image pickup area 2 is the same as that shown in FIG.

The storage area 20 is provided with a second vertical transfer path 11A in an odd-numbered column and a second vertical transfer path 11B in an even-numbered column corresponding to the first vertical transfer path 4 in the imaging area 2. . The second vertical transfer paths 11A in the odd-numbered columns further vertically transfer the signal charges vertically transferred from the first vertical transfer path 4 and transfer the signal charges to the second horizontal transfer path 17. The second vertical transfer paths 11B in even columns are not connected to the second horizontal transfer paths 17. A drain 21 is formed at the tip of the second vertical transfer path 11B in the even-numbered column. Second vertical transfer path 11B in even columns
The signal charge that has been transferred is discharged from the drain 21. Therefore, the signal charges transferred from the second vertical transfer paths 11A in the odd columns are input to the second horizontal transfer paths 17,
It will be transferred horizontally. Pixels in even columns are thinned out.

FIG. 6 shows still another embodiment,
The structure of a part of solid-state electronic image sensor is shown. The solid-state electronic image pickup device shown in FIG. 6 can also thin out a movie image in the horizontal direction.

The solid-state electronic image pickup device shown in FIG. 5 thins out pixels in even columns, but the solid-state electronic image pickup device shown in FIG. 6 has signal charges accumulated in the photodiodes 3 in the central column. Is output. The second vertical transfer path 11 corresponding to the first vertical transfer path 4 adjacent to the photodiode 3 in the central column is connected to the second horizontal transfer path 23. The second vertical transfer path 11C corresponding to the first vertical transfer path 4 adjacent to the photodiodes 3 other than the central photodiode 3 is not connected to the second horizontal transfer path 23, and the drain 21 is Has been formed. drain
The thinned signal charges are discharged from 21.

The central column is, for example, VGA (video gr
It is preferably set to 640 according to the aphics array).
This is because pixel thinning-out, interpolation, etc. are unnecessary when displaying a movie image on a VGA display device.

FIG. 7 shows still another embodiment and shows a part of a solid-state electronic image pickup device.

The solid-state electronic image pickup device shown in FIG. 7 is capable of thinning out pixels of a movie image in the horizontal direction and reducing the area of the storage region 24. Accumulation area
Since the area of 24 can be reduced, many solid-state electronic image pickup devices can be produced from one wafer.

The first vertical transfer paths 4 in the odd columns of the imaging area 8
A drain 7 is formed at the tip of A. A second vertical transfer path 25 in the imaging area 24 is provided corresponding to the first vertical transfer path 4B in the even-numbered columns.

The signal charges transferred through the first vertical transfer paths 4A in the odd-numbered columns are discharged from the drain 7, whereby pixel thinning is performed. The signal charge output from the first vertical transfer path 4B in the even-numbered column is
Is transferred to the vertical transfer path 25 and is output from the second horizontal transfer path 17.

Second vertical transfer path 25 included in storage area 24
Is half the number of the first vertical transfer paths 4A and 4B included in the imaging area 8. If the width of the storage area 24 (width in the horizontal direction) is set to be the same as the width of the imaging area 8, the width of the second vertical transfer path 25 can be widened laterally. By expanding the width of the second vertical transfer path 25 laterally,
The length of 25 can be shortened. Even if the length of the second vertical transfer path 25 is shortened, the area of the transfer electrode 26 of the second vertical transfer path 25 is the same as the area of the second vertical transfer electrode 12 described above.
It is possible to secure a potential well enough to transfer the signal charges.

[Brief description of drawings]

FIG. 1 shows a structure of a solid-state electronic image sensor.

FIG. 2 is a time chart of movie shooting.

FIG. 3 is a time chart of still shooting.

FIG. 4 is a time chart showing another example of still photography.

FIG. 5 shows a structure of a solid-state electronic image sensor.

FIG. 6 shows a structure of a solid-state electronic image sensor.

FIG. 7 shows a structure of a solid-state electronic image sensor.

[Explanation of symbols] 1 Solid-state electronic image sensor 2,8 Imaging area 3 photodiodes 4,4A, 4B First vertical transfer path 10, 20, 22, 24 Storage area 11A, 11B, 11C, 25 Second vertical transfer path 13 First horizontal transfer path 14 First FDA 15 Second horizontal transfer path 16 Second FDA

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4M118 AA04 AA05 AB01 BA12 BA13                       CA02 DB09 DB20 DD04 FA06                       FA21 FA34 FA35 FA44 FA50                 5C022 AA13 AB31 AC42                 5C024 BX01 CX13 CX56 CY11 CY16                       JX21 JX36

Claims (7)

[Claims] 1. A plurality of photoelectric conversion elements arranged in a horizontal direction and a vertical direction, and a photoelectric conversion element arranged adjacent to each column of the photoelectric conversion elements, the signal charges accumulated in the photoelectric conversion element being applied in a positive or reverse direction. A plurality of first vertical transfer selectively
An image pickup area having a vertical transfer path, a first horizontal transfer path for horizontally transferring signal charges vertically transferred in a reverse direction through the plurality of first vertical transfer paths of the image pickup area, and the above-mentioned image pickup area A plurality of second vertical transfer paths for vertically transferring the signal charges vertically transferred in the positive direction through the plurality of first vertical transfer paths
And a second horizontal transfer path for horizontally transferring the signal charges vertically transferred in the positive direction through the plurality of second vertical transfer paths of the storage area. Electronic imaging device. 2. A first conversion circuit that amplifies the signal charges horizontally transferred through the first horizontal transfer path using a first amplification factor to convert the signal charges into a video signal, and the second horizontal transfer path. The solid-state electronic imaging device according to claim 1, further comprising: a second conversion circuit that amplifies the signal charges horizontally transferred by using the amplification factor larger than the first amplification factor and converts the signal charges into a video signal. . 3. In response to a still image recording command, a reverse transfer pulse for vertically transferring the signal charges accumulated in the photoelectric conversion element in the imaging region in the reverse direction is applied to the plurality of first vertical transfer paths, The solid-state electronic imaging device according to claim 1, further comprising a first drive circuit that stops transfer pulses to the plurality of second vertical transfer paths. 4. The second horizontal transfer path is for transferring the signal charges vertically transferred from a part of the plurality of second vertical transfer paths in the horizontal direction. Solid-state electronic imaging device. 5. The unnecessary charges accumulated in the plurality of first vertical transfer paths when the photoelectric conversion element is shielded by a mechanical shutter unit that shields the photoelectric conversion element in the imaging region. A second drive circuit that drives the plurality of first vertical transfer paths so as to transfer to the plurality of second vertical transfer paths in a region, and the second drive circuit causes the unnecessary charges to be removed by the second drive circuit. The solid-state electronic imaging device according to claim 1, further comprising a transfer gate that shifts the signal charge accumulated in the photoelectric conversion element to the first vertical transfer path in response to being transferred to the vertical transfer path. 6. The number of the plurality of first vertical transfer paths in the storage area is smaller than the number of the plurality of first vertical transfer paths in the imaging area, and the corresponding second 2. The solid-state electronic image pickup device according to claim 1, wherein the first vertical transfer path having no vertical transfer path has a drain for discharging signal charges formed at an output portion of vertical transfer in the positive direction. 7. A plurality of photoelectric conversion elements arranged in a horizontal direction and a vertical direction, and a plurality of photoelectric conversion elements arranged adjacent to each column of the photoelectric conversion elements and vertically transferring signal charges accumulated in the photoelectric conversion elements. An image pickup area having a first vertical transfer path, and a plurality of second vertical transfer paths for further transferring in the vertical direction the signal charges vertically transferred in the positive direction on the first vertical transfer path of the image pickup area. In a solid-state electronic imaging device having a storage area, the plurality of first vertical transfer paths can be selectively vertically transferred in a forward or reverse direction, and the plurality of first vertical transfer paths in the imaging area are reversely transferred. A first horizontal transfer path for transferring the signal charges vertically transferred to the first horizontal transfer path and a plurality of second vertical transfer paths of the storage region for horizontally transferring the signal charges vertically transferred to the plurality of second vertical transfer paths. 2 horizontal transfer paths A plurality of the plurality of first vertical transfer paths and the plurality of first horizontal transfer paths for outputting the signal charges accumulated in the photoelectric conversion elements in the imaging area in response to a still image recording command. Controlling the first vertical transfer path and the first horizontal transfer path of the first vertical transfer path of the plurality of first vertical transfer paths in response to a moving image recording command to transfer the signal charge accumulated in the photoelectric conversion element of the imaging region. The plurality of first vertical transfer paths, the plurality of second vertical transfer paths and the second horizontal so as to output via the plurality of second vertical transfer paths and the second horizontal transfer path. A method for driving a solid-state electronic image pickup device, comprising: controlling a transfer path.