JP2003133718A - Reflow apparatus and method - Google Patents

Reflow apparatus and method

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Publication number
JP2003133718A
JP2003133718A JP2001323004A JP2001323004A JP2003133718A JP 2003133718 A JP2003133718 A JP 2003133718A JP 2001323004 A JP2001323004 A JP 2001323004A JP 2001323004 A JP2001323004 A JP 2001323004A JP 2003133718 A JP2003133718 A JP 2003133718A
Authority
JP
Japan
Prior art keywords
solder
substrate
temperature
electronic component
reflow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001323004A
Other languages
Japanese (ja)
Inventor
Yusuke Yamamoto
祐介 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001323004A priority Critical patent/JP2003133718A/en
Publication of JP2003133718A publication Critical patent/JP2003133718A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a reflow apparatus and a reflow method that can carry out reliable solder junction. SOLUTION: In the reflow apparatus for conveying a substrate 4 in a heating chamber 3 that is divided into a plurality of heating zones including a reflow zone, and at the same time allowing an electrode 6a for connection of an electronic component 6 mounted onto a surface at one side of the substrate 4 to be subjected to solder junction to an electrode 4a of the substrate 4 by cream solder 7, heaters H5B, H6B, H5A and H6A are provided in reflow zones Z5 and Z6. The heaters H5B and H6B heat the substrate 4 by radiant heat from the opposite side of an electronic component-mounting surface for fusing solder. The heaters H5A and H6A are used as an overheating-preventing means for spraying gas at temperature that is lower than a solder melt point temperature to the side of the electronic component-mounting surface of the substrate 4, to set the temperature of an electronic component 6 to a heat-resistant temperature or less. As a result, the solder is fused completely, and at the same time overheating in the electronic component 6 can be prevented even in lead-free solder with a high melting point.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半田接合対象物を
加熱するリフロー装置およびリフロー方法に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflow device and a reflow method for heating a solder joint object.

【0002】[0002]

【従来の技術】基板などの半田接合対象物に電子部品を
半田接合する際に用いられる装置として、リフロー装置
が知られている。リフロー装置は、対象物をリフロー装
置内の加熱室を通過させることにより半田接合部の温度
を順次上昇させ、半田融点温度以上に加熱することによ
り半田を溶融させて半田接合するものである。加熱室内
には一般に対象物の温度を急速に加熱して昇温させる昇
温ゾーン、対象物各部の温度を均一にする均熱ゾーンお
よび半田接合部の温度を融点以上に昇温させて半田を溶
融させるリフローゾーンを備えている。
2. Description of the Related Art A reflow device is known as a device used when soldering an electronic component to an object to be soldered such as a substrate. The reflow apparatus is one in which an object is passed through a heating chamber in the reflow apparatus to sequentially raise the temperature of a solder joint portion, and is heated to a temperature equal to or higher than the solder melting point temperature to melt the solder and perform solder joining. In the heating chamber, generally, a heating zone for rapidly heating the temperature of the target object to raise the temperature, a soaking zone for uniformizing the temperature of each part of the target object, and a solder joint by raising the temperature of the soldered portion to a temperature higher than the melting point. It has a reflow zone for melting.

【0003】[0003]

【発明が解決しようとする課題】近年鉛による環境汚染
防止の観点から、従来用いられていたスズ・鉛の共晶半
田に替えて、鉛を成分として含まない鉛フリー型の半田
が用いられるようになっている。しかしながら、この鉛
フリー型の半田の融点は従来型の半田と比較して高温で
あるため、電子部品の耐熱温度との間に温度余裕を確保
することが難しい。このため加熱温度を高めに設定する
と電子部品の過熱によるダメージを招きやすく、また加
熱温度を低めに設定すると半田溶融が不十分で接合不良
を生じやすいという問題点があった。
From the viewpoint of preventing environmental pollution by lead in recent years, a lead-free type solder containing no lead as a component is used in place of the conventionally used tin-lead eutectic solder. It has become. However, since the melting point of this lead-free solder is higher than that of the conventional solder, it is difficult to secure a temperature margin with the heat resistant temperature of the electronic component. Therefore, if the heating temperature is set to be high, the electronic components are likely to be damaged by overheating, and if the heating temperature is set to be low, there is a problem that solder melting is insufficient and a bonding failure is likely to occur.

【0004】そこで本発明は、信頼性に優れた半田接合
を行うことができるリフロー装置およびリフロー方法を
提供することを目的とする。
Therefore, an object of the present invention is to provide a reflow apparatus and a reflow method capable of performing solder joining with excellent reliability.

【0005】[0005]

【課題を解決するための手段】請求項1記載のリフロー
装置は、基板をリフローゾーンを含む複数の加熱ゾーン
に区画された加熱室内を搬送しながら基板の一方側の面
に搭載された電子部品の接続用電極を基板の電極に半田
接合するリフロー装置であって、接合用の半田を溶融さ
せるリフローゾーンに、前記基板を電子部品搭載面の反
対側から輻射熱で加熱することにより半田を溶融させる
加熱手段と、前記基板の電子部品搭載面側に半田融点温
度よりも低い温度の気体を吹き付けることにより電子部
品の温度を耐熱温度以下にする過熱防止手段とを備え
た。
According to another aspect of the present invention, there is provided an electronic component mounted on one surface of a substrate while the substrate is transported in a heating chamber defined by a plurality of heating zones including a reflow zone. Is a reflow device for solder-bonding the connection electrode to the electrode of the board, wherein the solder is melted by heating the board with radiant heat from the opposite side of the electronic component mounting surface to the reflow zone for melting the solder for bonding. A heating means and an overheat preventing means for controlling the temperature of the electronic component to a heat resistant temperature or lower by blowing a gas having a temperature lower than the melting point of the solder to the electronic component mounting surface side of the substrate are provided.

【0006】請求項2記載のリフロー装置は、請求項1
記載のリフロー装置であって、前記半田が、鉛フリー型
の半田である。
The reflow apparatus according to claim 2 is the reflow apparatus according to claim 1.
In the reflow device described above, the solder is a lead-free type solder.

【0007】請求項3記載のリフロー方法は、基板の一
方側の面に搭載された電子部品の接続用電極を基板の電
極に半田接合するリフロー方法であって、前記基板を電
子部品搭載面の反対側から輻射熱により加熱することに
より電子部品搭載面側の半田を溶融させるとともに、前
記基板の電子部品搭載面側に半田融点温度よりも低い温
度の気体を吹き付けて半田付けされる電子部品の温度が
耐熱温度以上になることを防止する。
A reflow method according to a third aspect of the present invention is a reflow method of soldering a connecting electrode of an electronic component mounted on one surface of a substrate to an electrode of the substrate, wherein the substrate is mounted on the electronic component mounting surface. While melting the solder on the electronic component mounting surface side by heating with radiant heat from the opposite side, the temperature of the electronic component soldered by blowing a gas having a temperature lower than the melting point temperature of the solder onto the electronic component mounting surface side of the substrate. Is prevented from exceeding the heat resistant temperature.

【0008】請求項4記載のリフロー方法は、請求項3
記載のリフロー方法であって、前記半田が、鉛フリー型
の半田である。
The reflow method according to claim 4 is the reflow method according to claim 3.
The reflow method as described above, wherein the solder is lead-free solder.

【0009】本発明によれば、接合用の半田を溶融させ
るリフローゾーンにおいて、基板を電子部品搭載面の反
対側から輻射熱により加熱して電子部品搭載面側の半田
を溶融させるとともに、基板の電子部品搭載面側に半田
融点温度よりも低い温度の気体を吹き付けて半田付けさ
れる電子部品の温度が耐熱温度以上になることを防止す
ることにより、半田を完全に溶融させるとともに電子部
品の過熱を防止することができる。
According to the present invention, in the reflow zone for melting the solder for joining, the substrate is heated by radiant heat from the side opposite to the electronic component mounting surface to melt the solder on the electronic component mounting surface side, By blowing a gas at a temperature lower than the melting point of the solder onto the component mounting surface side to prevent the temperature of the electronic components to be soldered from exceeding the heat resistant temperature, the solder is completely melted and the electronic components are not overheated. Can be prevented.

【0010】[0010]

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1は本発明の一実施の形態のリフ
ロー装置の側断面図、図2(a)は本発明の一実施の形
態のリフロー装置のリフローゾーンの断面図、図2
(b)は本発明の一実施の形態のリフロー装置によって
半田接合される基板の断面図、図3は本発明の一実施の
形態のリフロー方法における加熱温度および加熱プロフ
ァイルの説明図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. 1 is a side sectional view of a reflow apparatus according to an embodiment of the present invention, and FIG. 2A is a sectional view of a reflow zone of a reflow apparatus according to an embodiment of the present invention.
FIG. 3B is a cross-sectional view of a substrate solder-bonded by the reflow device according to the embodiment of the present invention, and FIG. 3 is an explanatory diagram of a heating temperature and a heating profile in the reflow method according to the embodiment of the present invention.

【0011】まず図1を参照してリフロー装置の構造を
説明する。図1において、リフロー装置1は、炉体2の
内部に水平方向に配設された加熱室3を備えており、加
熱室3は7つのゾーンZ1,Z2,Z3,Z4,Z5,
Z6,Z7に区画されている。ゾーンZ1,Z2は半田
接合の対象物である基板4を急速に加熱して昇温させる
昇温ゾーンとなっており、ゾーンZ3,Z4は、基板4
の各部の温度を均一にして所定の予熱温度にする均熱ゾ
ーンとなっている。そしてゾーンZ5,Z6は、基板4
の半田接合部を半田溶融温度を超える温度まで加熱して
半田接合を行うリフローゾーンとなっており、ゾーンZ
7は、半田接合後の基板4を冷却する冷却ゾーンとなっ
ている。
First, the structure of the reflow apparatus will be described with reference to FIG. In FIG. 1, the reflow apparatus 1 includes a heating chamber 3 horizontally arranged inside a furnace body 2, and the heating chamber 3 includes seven zones Z1, Z2, Z3, Z4, Z5.
It is divided into Z6 and Z7. Zones Z1 and Z2 are heating zones for rapidly heating the substrate 4 which is the object of solder joining to raise the temperature. The zones Z3 and Z4 are the substrate 4
Is a soaking zone in which the temperature of each part is made uniform to a predetermined preheating temperature. The zones Z5 and Z6 are the substrate 4
It is a reflow zone that heats the solder joint part of the above to a temperature exceeding the solder melting temperature to perform the solder joint.
A cooling zone 7 cools the substrate 4 after solder bonding.

【0012】加熱室3の上流側(図1において左側)の
側壁には、基板4を搬入するための搬入口3aが、また
下流側の側壁には基板4を搬出するための搬出口3bが
設けられていいる。搬入口3aから搬出口3bの間に
は、各ゾーンZ1〜Z7を貫通して搬送コンベア5が配
設されている。搬送コンベア5によって搬入口3aから
加熱室3内に搬入された基板4は、各ゾーンを順次通過
して搬出口3bから外部へ搬出される。
An inlet 3a for loading the substrate 4 is provided on the upstream side wall (left side in FIG. 1) of the heating chamber 3, and an outlet 3b for loading the substrate 4 is provided on the downstream side wall. It is provided. A transport conveyor 5 is arranged between the carry-in port 3a and the carry-out port 3b so as to penetrate the zones Z1 to Z7. The substrate 4 carried into the heating chamber 3 from the carry-in port 3a by the carrying conveyor 5 sequentially passes through each zone and is carried out to the outside from the carry-out port 3b.

【0013】ここで加熱室3内の各ゾーンに設けられた
加熱手段について説明する。本実施の形態に示すリフロ
ー装置1には、各ゾーンの目的に応じて異なる種類の加
熱手段が設けられている。ゾーンZ1には、搬送コンベ
ア5の上側にヒータと送風ファンを組み合わせた熱風式
の加熱装置H1Aが、また搬送コンベア5の下側に遠赤
外線式の加熱装置H1Bが配設されている。加熱装置H
1Aは、基板4の上面側に熱風を吹き付けることによ
り、基板4や基板4の上面に搭載された電子部品を加熱
する。加熱装置H1Bは基板4の下面に対して遠赤外線
を照射し、輻射熱により基板4を加熱する。
Here, the heating means provided in each zone in the heating chamber 3 will be described. The reflow device 1 shown in the present embodiment is provided with different types of heating means depending on the purpose of each zone. In the zone Z1, a hot-air type heating device H1A combining a heater and a blowing fan is arranged above the transport conveyor 5, and a far infrared heating device H1B is disposed below the transport conveyor 5. Heating device H
1A heats the board 4 and the electronic components mounted on the top surface of the board 4 by blowing hot air onto the top surface of the board 4. The heating device H1B irradiates the lower surface of the substrate 4 with far infrared rays and heats the substrate 4 by radiant heat.

【0014】ゾーンZ1,Z2,Z3,Z4には、搬送
コンベア5の上側・下側ともに、すべて熱風式の加熱装
置が設けられている。すなわち、ゾーンZ2には、加熱
装置H2A,H2Bが、ゾーンZ3には、加熱装置H3
A,H3Bが、ゾーンZ4には、加熱装置H4A,H4
Bがそれぞれ設けられている。ゾーンZ1,Z2,Z
3,Z4においては、基板4の上面および下面に対して
熱風が吹き付けられ、基板4を所定の予熱温度まで加熱
するようになっている。
In the zones Z1, Z2, Z3 and Z4, hot air type heating devices are provided on both upper and lower sides of the conveyor 5. That is, the heating devices H2A and H2B are provided in the zone Z2, and the heating device H3 is provided in the zone Z3.
A, H3B, in the zone Z4, heating devices H4A, H4
B are provided respectively. Zones Z1, Z2, Z
In Z3 and Z4, hot air is blown onto the upper and lower surfaces of the substrate 4 to heat the substrate 4 to a predetermined preheating temperature.

【0015】ゾーンZ5,Z6には、搬送コンベア5の
上側にそれぞれ熱風式の加熱装置H5A,H6Aが、ま
た搬送コンベア5の下側にそれぞれ遠赤外線式の加熱装
置H5B,H6Bが配設されている。ゾーンZ5(Z
6)では、図2(a)に示すように、搬送コンベア5上
に載置された基板4の下面側を、加熱装置H5B(H6
B)から照射される遠赤外線の輻射熱によって加熱する
(破線矢印a参照)とともに、基板4の上面に対して加
熱装置H5A(H6A)から吹き出される所定温度の熱
風が吹き付けられる(実線矢印b参照)。そしてゾーン
Z7には、上側・下側とも冷却用の送風装置F7A,F
7Bが配設されている。
In the zones Z5 and Z6, hot air type heating devices H5A and H6A are provided above the transfer conveyor 5, and far infrared type heating devices H5B and H6B are provided below the transfer conveyor 5, respectively. There is. Zone Z5 (Z
In 6), as shown in FIG. 2A, the lower surface side of the substrate 4 placed on the conveyor 5 is heated by the heating device H5B (H6).
While being heated by radiant heat of far infrared rays emitted from B) (see broken line arrow a), hot air of a predetermined temperature blown from the heating device H5A (H6A) is blown onto the upper surface of the substrate 4 (see solid line arrow b). ). Then, in the zone Z7, both upper and lower blowers F7A and F7 for cooling are provided.
7B is provided.

【0016】ここで、リフロー装置1による半田接合対
象となる基板4は片面実装基板であり、一方側の面(上
面)のみに電子部品6が実装される。図2(b)に示す
ように、基板4の上面には電子部品が実装される電極4
aが形成されており、前工程の半田印刷工程において電
極4a上にはクリーム半田7が印刷される。さらに部品
実装工程において基板4の上面側には電子部品6が搭載
され、半田印刷後の電極4aには電子部品6の接続用電
極6aが着地する。
Here, the substrate 4 to be soldered by the reflow device 1 is a single-sided mounting substrate, and the electronic component 6 is mounted only on one surface (upper surface). As shown in FIG. 2B, an electrode 4 on which an electronic component is mounted is mounted on the upper surface of the substrate 4.
a is formed, and the cream solder 7 is printed on the electrode 4a in the solder printing step of the previous step. Further, in the component mounting step, the electronic component 6 is mounted on the upper surface side of the substrate 4, and the connection electrode 6a of the electronic component 6 lands on the electrode 4a after solder printing.

【0017】ここで、半田接合に用いられるクリーム半
田7中の半田粒子は、鉛成分を全く含まないか、または
ほとんど含まない鉛フリー型の半田(例えば、Sn−A
g−Cu系など)が用いられる。このような鉛フリー型
の半田の溶融温度は、従来使用されていた錫・鉛共晶半
田の溶融温度と比較して大幅に高く、210〜220℃
程度であることから、リフロー過程において電子部品6
の耐熱温度(約240℃)との温度差(温度余裕)が僅
かしか確保できないという制約がある。
Here, the solder particles in the cream solder 7 used for solder joining contain lead-free solder (eg, Sn-A) containing no or almost no lead component.
g-Cu system etc.) is used. The melting temperature of such a lead-free solder is significantly higher than the melting temperature of the tin-lead eutectic solder that has been conventionally used, 210 to 220 ° C.
Since it is only about 6 degrees, electronic parts 6
There is a constraint that a small temperature difference (temperature margin) from the heat resistant temperature (about 240 ° C.) can be secured.

【0018】このような制約下で、電子部品6の熱損傷
を生じることなく良好な半田接合を行うため、本実施の
形態においては、図3に示すような各ゾーンごとの加熱
温度および加熱プロファイルによってリフローを行うよ
うにしている。図3(a)は各ゾーンの加熱温度(加熱
装置の設定温度)の一例を示しており、図3(b)は基
板4の上面側の半田接合部の各ゾーンにおける温度を示
す加熱プロファイルである。
Under such restrictions, in order to perform good solder joining without causing thermal damage to the electronic component 6, in the present embodiment, the heating temperature and heating profile for each zone as shown in FIG. I am trying to reflow. FIG. 3A shows an example of the heating temperature of each zone (set temperature of the heating device), and FIG. 3B is a heating profile showing the temperature in each zone of the solder joint on the upper surface side of the substrate 4. is there.

【0019】まず昇熱ゾーン(Z1,Z2)、均熱ゾー
ン(Z3,Z4)における温度設定について説明する。
これらのゾーンに配設された加熱装置のうち、熱風によ
る加熱装置H1A,H2A,H3A,H4A,H2B,
H3B,H4Bはすべて予熱温度T1に合わせて180
℃に設定される。そしてゾーンZ1に配設された加熱装
置H1Bは、基板4を下面側から急速に昇温させる目的
で、300℃に設定される。このような温度設定によ
り、図2(b)に示すように、加熱室3に搬入された基
板4は昇熱ゾーンにおいて急速に昇温し、均熱ゾーンを
通過することによって基板4の各部が所定の予熱温度T
1に均一に加熱される。
First, the temperature setting in the heat raising zone (Z1, Z2) and the soaking zone (Z3, Z4) will be described.
Among the heating devices arranged in these zones, the heating devices H1A, H2A, H3A, H4A, H2B by hot air,
H3B and H4B are all 180 according to the preheating temperature T1.
Set to ° C. The heating device H1B arranged in the zone Z1 is set to 300 ° C. for the purpose of rapidly raising the temperature of the substrate 4 from the lower surface side. With such a temperature setting, as shown in FIG. 2B, the substrate 4 carried into the heating chamber 3 rapidly rises in temperature in the heat-up zone, and each part of the substrate 4 is separated by passing through the temperature-equalizing zone. Preheat temperature T
Heated uniformly to 1.

【0020】次に、接合用のクリーム半田7を溶融させ
るリフローゾーン(Z5,Z6)における温度設定につ
いて説明する。ここでは、加熱装置H5B,H6Bによ
って基板4の下面側に遠赤外線を照射するが、このとき
加熱装置H5B,H6Bの設定温度は400℃に設定さ
れる。この遠赤外線の輻射熱により基板4の下面は昇温
し、そしてこの熱は基板4内部の熱伝導により基板4の
上面を昇温させ、図3(b)に示すように、ゾーンZ6
において基板4の上面側の温度は、融点温度T3を超え
る温度まで上昇する。
Next, the temperature setting in the reflow zones (Z5, Z6) for melting the bonding cream solder 7 will be described. Here, far infrared rays are emitted to the lower surface side of the substrate 4 by the heating devices H5B and H6B, and at this time, the set temperature of the heating devices H5B and H6B is set to 400 ° C. The radiant heat of the far infrared rays raises the temperature of the lower surface of the substrate 4, and this heat causes the heat of the inside of the substrate 4 to increase the temperature of the upper surface of the substrate 4. As shown in FIG.
In, the temperature on the upper surface side of the substrate 4 rises to a temperature exceeding the melting point temperature T3.

【0021】これにより、基板4の電極4aと電子部品
6の接合用電極6aとの間に介在するクリーム半田7中
の半田成分が溶融し、接続用電極6aは電極4aに半田
接合される。したがって加熱装置H5B,H6Bは、基
板4を電子部品搭載面(上面)の反対側から遠赤外線の
照射による輻射熱で加熱することによって半田を溶融さ
せる加熱手段となっている。なお加熱装置H5B,H6
Bとしては、輻射熱以外の加熱方式(例えば熱風吹き付
け方式)を併用したものでもよく、基板4の上面のクリ
ーム半田を溶融させることが可能なものであればよい。
As a result, the solder component in the cream solder 7 interposed between the electrode 4a of the substrate 4 and the joining electrode 6a of the electronic component 6 is melted, and the connecting electrode 6a is soldered and joined to the electrode 4a. Therefore, the heating devices H5B and H6B are heating means for melting the solder by heating the substrate 4 from the side opposite to the electronic component mounting surface (upper surface) with radiant heat generated by irradiation of far infrared rays. The heating devices H5B, H6
As B, a heating method other than the radiant heat (for example, a hot air blowing method) may be used in combination, and any material capable of melting the cream solder on the upper surface of the substrate 4 may be used.

【0022】また、リフローゾーンにおいては、加熱装
置H5B,H6Bによる加熱とともに、上側の加熱装置
H5A,H6Aによる基板4上面側の温度調節が行われ
る。すなわち、加熱装置H5A,H6Aは、それぞれ電
子部品6の耐熱温度T3(約240℃)よりも低い設定
温度210℃,200℃に加熱温度が設定され、基板4
の上面には、これらの設定温度の熱風が吹き付けられ
る。
In the reflow zone, the heating devices H5B and H6B perform heating, and the upper heating devices H5A and H6A adjust the temperature of the upper surface of the substrate 4. That is, in the heating devices H5A and H6A, the heating temperature is set to 210 ° C. and 200 ° C., which are lower than the heat resistant temperature T3 (about 240 ° C.) of the electronic component 6, respectively.
Hot air of these set temperatures is blown onto the upper surface of the.

【0023】これにより、電子部品6の温度はこれらの
設定温度を大きく上回ることがなく、常に耐熱温度T3
よりも低い温度に維持される。したがって加熱装置H5
A,H6Aは、基板4の電子部品搭載面側に半田融点温
度よりも低い温度の気体を吹き付けることにより電子部
品6の温度を耐熱温度以下にする過熱防止手段となって
いる。
As a result, the temperature of the electronic component 6 does not greatly exceed these set temperatures, and the heat resistant temperature T3 is always maintained.
Maintained at a lower temperature. Therefore, the heating device H5
A and H6A are overheat preventing means for keeping the temperature of the electronic component 6 below the heat resistant temperature by blowing a gas having a temperature lower than the melting point temperature of the solder onto the electronic component mounting surface side of the substrate 4.

【0024】この後、基板4は冷却ゾーンに移動し、こ
こで送風装置F7A,F7Bによって基板4の上下両面
から常温程度の冷風が吹き付けられ、基板4の冷却が行
われる。これにより、リフローゾーンにおいて溶融した
半田は冷却固化し、半田接合が完了する。
After that, the substrate 4 is moved to the cooling zone, where cool air at about room temperature is blown from both upper and lower surfaces of the substrate 4 by the blowers F7A and F7B to cool the substrate 4. As a result, the solder melted in the reflow zone is cooled and solidified, and the solder joining is completed.

【0025】このように、本実施の形態に示すリフロー
装置においては、リフローゾーンにおいて、基板4を電
子部品搭載面の反対側から輻射熱により加熱して電子部
品搭載面側の半田を溶融させるとともに、電子部品搭載
面側に半田融点温度よりも低い温度の気体を吹き付けて
電子部品6の温度が耐熱温度以上になることを防止する
ものである。これにより、基板4を効率よく昇温させる
ことができるとともに、耐熱温度が低い電子部品6自体
の過熱を防止することができるため、高融点の鉛フリー
型の半田を用いる場合にあっても、電子部品の過熱によ
るダメージを生じることなく、信頼性に優れた半田接合
を行うことができる。
As described above, in the reflow apparatus according to the present embodiment, in the reflow zone, the board 4 is heated by radiant heat from the side opposite to the electronic component mounting surface to melt the solder on the electronic component mounting surface side. A gas having a temperature lower than the melting point temperature of the solder is blown to the electronic component mounting surface side to prevent the temperature of the electronic component 6 from exceeding the heat resistant temperature. As a result, it is possible to efficiently raise the temperature of the substrate 4 and prevent overheating of the electronic component 6 itself having a low heat resistant temperature. Therefore, even when using a high melting point lead-free solder, Solder bonding with excellent reliability can be performed without causing damage due to overheating of electronic components.

【0026】[0026]

【発明の効果】本発明によれば、接合用の半田を溶融さ
せるリフローゾーンにおいて、基板を電子部品搭載面の
反対側から輻射熱により加熱して電子部品搭載面側の半
田を溶融させるとともに、基板の電子部品搭載面側に半
田融点温度よりも低い温度の気体を吹き付けて半田付け
される電子部品の温度が耐熱温度以上になることを防止
するようにしたので、鉛フリー型の半田を用いる場合に
あっても、半田を完全に溶融させるとともに電子部品の
過熱を防止して、信頼性に優れた半田接合を実現でき
る。
According to the present invention, in the reflow zone for melting the solder for joining, the substrate is heated by radiant heat from the side opposite to the electronic component mounting surface to melt the solder on the electronic component mounting surface side and When a lead-free solder is used, the temperature of the electronic component to be soldered is prevented from exceeding the heat resistant temperature by blowing a gas at a temperature lower than the melting point of the solder onto the electronic component mounting surface of Even in this case, it is possible to completely melt the solder, prevent overheating of the electronic component, and realize highly reliable solder joining.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施の形態のリフロー装置の側断面
FIG. 1 is a side sectional view of a reflow device according to an embodiment of the present invention.

【図2】(a)本発明の一実施の形態のリフロー装置の
リフローゾーンの断面図 (b)本発明の一実施の形態のリフロー装置によって半
田接合される基板の断面図
FIG. 2A is a cross-sectional view of a reflow zone of a reflow device according to an embodiment of the present invention. FIG. 2B is a cross-sectional view of a substrate solder-bonded by the reflow device according to an embodiment of the present invention.

【図3】本発明の一実施の形態のリフロー方法における
加熱温度および加熱プロファイルの説明図
FIG. 3 is an explanatory diagram of a heating temperature and a heating profile in the reflow method according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 リフロー装置 3 加熱室 4 基板 4a 電極 6 電子部品 6a 接続用電極 7 クリーム半田 H5A,H6A 加熱装置(熱風式) H5B,H6B 加熱装置(遠赤外線式) 1 reflow equipment 3 heating chambers 4 substrates 4a electrode 6 electronic components 6a Connection electrode 7 cream solder H5A, H6A heating device (hot air type) H5B, H6B heating device (far infrared type)

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】基板をリフローゾーンを含む複数の加熱ゾ
ーンに区画された加熱室内を搬送しながら基板の一方側
の面に搭載された電子部品の接続用電極を基板の電極に
半田接合するリフロー装置であって、接合用の半田を溶
融させるリフローゾーンに、前記基板を電子部品搭載面
の反対側から輻射熱で加熱することにより半田を溶融さ
せる加熱手段と、前記基板の電子部品搭載面側に半田融
点温度よりも低い温度の気体を吹き付けることにより電
子部品の温度を耐熱温度以下にする過熱防止手段とを備
えたことを特徴とするリフロー装置。
1. A reflow process in which a connection electrode of an electronic component mounted on one surface of a substrate is soldered to an electrode of the substrate while the substrate is conveyed in a heating chamber defined by a plurality of heating zones including a reflow zone. A device, in a reflow zone for melting solder for joining, heating means for melting the solder by heating the substrate with radiant heat from the side opposite to the electronic component mounting surface, and the electronic component mounting surface side of the substrate A reflow apparatus comprising: an overheat prevention unit for reducing a temperature of an electronic component to a heat resistant temperature or lower by blowing a gas having a temperature lower than a solder melting point temperature.
【請求項2】前記半田が、鉛フリー型の半田であること
を特徴とする請求項1記載のリフロー装置。
2. The reflow apparatus according to claim 1, wherein the solder is a lead-free type solder.
【請求項3】基板の一方側の面に搭載された電子部品の
接続用電極を基板の電極に半田接合するリフロー方法で
あって、前記基板を電子部品搭載面の反対側から輻射熱
により加熱することにより電子部品搭載面側の半田を溶
融させるとともに、前記基板の電子部品搭載面側に半田
融点温度よりも低い温度の気体を吹き付けて半田付けさ
れる電子部品の温度が耐熱温度以上になることを防止す
ることを特徴とするリフロー方法。
3. A reflow method for soldering a connecting electrode of an electronic component mounted on one surface of a substrate to an electrode of the substrate, wherein the substrate is heated from the side opposite to the electronic component mounting surface by radiant heat. As a result, the solder on the electronic component mounting surface side is melted, and the temperature of the electronic component to be soldered by blowing a gas having a temperature lower than the melting point temperature of the solder onto the electronic component mounting surface side of the substrate becomes equal to or higher than the heat resistant temperature. A reflow method characterized by preventing
【請求項4】前記半田が、鉛フリー型の半田であること
を特徴とする請求項3記載のリフロー方法。
4. The reflow method according to claim 3, wherein the solder is a lead-free type solder.
JP2001323004A 2001-10-22 2001-10-22 Reflow apparatus and method Pending JP2003133718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001323004A JP2003133718A (en) 2001-10-22 2001-10-22 Reflow apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001323004A JP2003133718A (en) 2001-10-22 2001-10-22 Reflow apparatus and method

Publications (1)

Publication Number Publication Date
JP2003133718A true JP2003133718A (en) 2003-05-09

Family

ID=19139956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001323004A Pending JP2003133718A (en) 2001-10-22 2001-10-22 Reflow apparatus and method

Country Status (1)

Country Link
JP (1) JP2003133718A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110856352A (en) * 2019-11-23 2020-02-28 湖南东神自动化设备有限公司 Circuit board preheating device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110856352A (en) * 2019-11-23 2020-02-28 湖南东神自动化设备有限公司 Circuit board preheating device

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