JP2003133515A - Power semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor device which improves heat radiation and facilitates connection with outer conductive plates, to easily deal with the tendency for miniaturization and a large capacity as a whole. SOLUTION: Semiconductor chips 4 are adjacently arrayed along a pair of opposite sides of a quadrilateral cooling metal base 1 having bolt mounting holes 16 at the edges of the pair of opposite sides for fastening outer cooling members to the metal base 1. An electrode plate 6 is disposed in the middle of the array of the chips 4, so that a heat source does not exist at a central portion of the base 1 but heating parts are close to radiating parts sufficient to radiate heat efficiently. Electrode terminals 21, 22 and 23 project outward from other sides than the pair of opposite sides having the bolt-mounting holes 16, and this facilitating the connection with outer conductive plates 26, 27 and 28 and also a parallel arrangement of a plurality of semiconductor power modules 20.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device used for motor control and inverters.

[0002]

2. Description of the Related Art A power semiconductor device (hereinafter referred to as "semiconductor power module") uses a semiconductor to convert a DC input into an AC of an arbitrary frequency and output the AC power. It is used for the corresponding inverter or uninterruptible power supply (UPS). FIG. 9 shows a plan view of a conventional semiconductor power module 50,
FIG. 10 is a side sectional view showing the internal structure. As shown in FIG. 9, a semiconductor power module is usually formed in a quadrilateral shape, and various functional components described below are stacked on a quadrilateral cooling metal base 51, and the outside is covered with a resin case 58.
Surrounded by.

In FIG. 10, an insulating substrate 52 is fixed to a cooling metal base 51, and a circuit pattern 53 is formed on the surface thereof.
Is stuck. A plurality of semiconductor chips 54 are mounted on the circuit pattern 53, and each semiconductor chip 54 is mounted.
One terminal has an electrode plate 56a and another terminal has an electrode plate 56b
, And the circuit pattern 53 is further connected to the electrode plate 56c. These electrode plates 56a, 56b, 5
6c is insulated from each other and extends to the outside of the resin case 58 to form a P terminal 61, an N terminal 62, and an AC terminal 63 which are DC input terminals serving as main circuit terminals for external connection. The inside of the resin case 58 is filled with a filling material 59 such as silicon gel to protect the semiconductor chip 54 and others.
A control terminal 64 is arranged at the edge of one side of the quadrilateral of the semiconductor power module 50. In the illustrated example, mounting bolt holes 66 for bolting the cooling metal base 51 to another external cooling member are provided at each vertex of the quadrangle of the cooling metal base 51.

During operation of the semiconductor power module 50 configured as described above, a direct current flowing from the P terminal 61 to the N terminal 62 is converted into an alternating current by the action of the semiconductor chip 54 based on a command from the control terminal 64. , This alternating current is output from the alternating current terminal 64. At this time, the semiconductor chip 54 generates a large amount of heat. In order to prevent high temperature destruction of the semiconductor chip 54 due to this heat generation, heat is applied to the insulating substrate 52.
The heat is radiated from the cooling metal base 51 to the external cooling member such as a radiating fin (not shown) formed of a member having excellent thermal conductivity such as aluminum.
In order to radiate heat to the radiating fins, the cooling metal base 51 is attached to the cooling fins by bolts through the attachment bolt holes 66.

[0005]

However, the conventional semiconductor power module as described above has a problem. First, as shown in FIG. 10, since the semiconductor chip 54 is arranged in the substantially central portion of the semiconductor power module 50, heat generation of the semiconductor chip 54 occurs in the central portion of the semiconductor power module. The generated heat is transmitted from the insulating substrate 52 to the cooling metal base 51, and is further transmitted from the cooling metal base 51 to the heat radiation fins. Most of the heat transfer from the cooling metal base 51 to the radiating fins comes from the portion where the both are crimped by being tightened by the bolts at the mounting bolt holes 66. If the position of the mounting bolt hole 66 is distant from the heat generating portion in the central portion in terms of distance, sufficient heat radiation cannot be performed.

Therefore, the semiconductor power module 50
It is conceivable to add one or more bolted sections along each side of the quadrilateral. However, in this case, since the heat generating portion is located substantially in the center of the semiconductor power module 50 as described above, the additional mounting bolt holes 66 are provided on all sides of the quadrangle in order to effectively dissipate heat. There is a problem that they have to be placed.

Next, as apparent from FIG. 9, in the conventional semiconductor power module 50, the P terminal 61 and the N terminal 6 are provided.
2. The AC terminals 63 are arranged in a line at the center of the semiconductor power module 50. Moreover, as shown in FIG. 10, these terminals 61, 62, 63 are provided at the same height with respect to the cooling metal base 51. Normally, the P terminal 61 and the N terminal 62 are connected by a bus bar, and this bus bar is a laminate composed of two conductive plates 71, 72 and an insulating layer 73 sandwiched between them, as shown in FIG. A structured busbar 70 is used.

A bus bar 70 having a structure as shown in FIG.
To connect the P terminal 61 and the N terminal 62 formed at the same height, it is necessary to process the bus bar 70. For example, as shown in FIG. 12, when the lower conductive plate 72 is connected to the N terminal 62, the upper conductive plate 7 is connected.
In order to connect 1 to the P terminal 61, it is necessary to remove a part of the lower conductive plate 72 and the insulating layer 73 and bend the upper conductive plate 71 downward. Further, although a separate conductive plate 74 is normally connected to the AC terminal 63, in order to avoid a short circuit between the AC terminal 63 and the lower conductive plate 72 of the bus bar 70, the entire bus bar 70 is bent so that the AC terminal 63 is not bent. 12, or the bus bar 70 is provided with a through hole 76 as shown in FIG. 12, the extension portion 77 is attached to the AC terminal 63 to penetrate the through hole 76, and then the extension portion 77 is attached to the conductive plate 74. It is necessary to take measures such as connecting.

That is, in the conventional semiconductor power module 50, the conductive plates 71, 7 for the terminals 61, 62, 63 are provided.
Additional processing is required to connect 2, 74,
In addition, complicated connection work was required. Furthermore, the semiconductor power module 50 to which the bus bar 70 and the conductive plate 74 are attached is bulky, and there is a problem that the entire device including the semiconductor power module 50 becomes large.

Therefore, the present invention solves the above-mentioned conventional problems, improves heat dissipation, facilitates connection with an external conductive plate, and is capable of downsizing or increasing the capacity of the semiconductor power module as a whole. Is intended to provide.

[0011]

In a semiconductor power module according to the present invention, semiconductor chips are arranged along a pair of opposing sides of a quadrilateral of a cooling metal base, and the pair of opposing cooling metals are provided. Mounting bolt holes for tightening the cooling metal base and the radiation fins are arranged on the edge of the base, and by fastening them with bolts, efficient heat radiation is possible, and each electrode terminal is connected to the semiconductor power module. It is easy to connect to an external conductive plate by arranging it so as to abut on the outside and eliminates the above-mentioned problems.
Specifically, it includes the following contents.

That is, the present invention according to claim 1 is mounted on a quadrangular plate-shaped cooling metal base, an insulating substrate fixed to the cooling metal base, and a circuit pattern formed on the insulating substrate. A plurality of formed semiconductor chips, a plurality of electrode plates to which the circuit pattern and each terminal of the semiconductor chip are connected, the insulating substrate, the semiconductor chip, and the electrode plate are fixed to the cooling metal base. A power semiconductor device comprising a case and a plurality of main circuit terminals for external connection extending from each of the electrode plates, wherein the plurality of semiconductor chips are a pair of quadrilateral opposed sides of the cooling metal base. And a pair of mounting bolt holes for mounting the cooling metal base on an external cooling member, the mounting bolt holes being arranged adjacent to the pair of opposing sides along the side of the cooling metal base. That are formed on the edge portion along the side opposing to a semiconductor device for electric power according to claim.
By arranging the bolt holes for attaching the radiation fins to the cooling metal base and the semiconductor chip adjacently, the heat of the semiconductor chip is efficiently radiated to the outside.

According to a second aspect of the present invention, there is provided the power semiconductor device, wherein the plurality of electrode plates are arranged in the middle of two arrays of the semiconductor chips arranged along the pair of opposing sides. It is characterized in that it is arranged so as to extend substantially parallel to the opposite sides of. This avoids heat generation in the vicinity of the central portion of the power semiconductor device.

According to a third aspect of the present invention, there is provided a power semiconductor device in which the plurality of electrode plates have a laminated structure in which the electrode plates are sequentially stacked with an insulating layer interposed therebetween. . The effect of reducing mutual inductance is obtained.

The present invention according to claim 4 is mounted on a quadrilateral plate-shaped cooling metal base, an insulating substrate fixed to the cooling metal base, and a circuit pattern formed on the insulating substrate. A plurality of semiconductor chips, a plurality of electrode plates to which the circuit pattern and each terminal of the semiconductor chips are connected, and a case fixed to the cooling metal base surrounding the insulating substrate, the semiconductor chips, and the electrode plates. And a plurality of external connection main circuit terminals extending from each electrode plate, wherein the plurality of external connection main circuit terminals are projected from the cooling metal base to the outside. The present invention relates to a power semiconductor device characterized by being provided. By providing the external connection main circuit terminal so as to project to the outside, the connection with the external conductive plate is facilitated.

In a power semiconductor device according to a fifth aspect of the present invention, among the plurality of main circuit terminals for external connection, a P terminal and an N terminal forming a main circuit terminal for direct current external connection for DC have the four sides. It is characterized in that one side of the shape is provided with an AC terminal which constitutes an AC external connection main circuit terminal so as to project to the outside at a side facing the one side. By arranging the electrode terminal on the DC input side and the electrode terminal on the AC output side separately, it is easy to connect both the input side and the output side.

According to a sixth aspect of the present invention, there is provided a power semiconductor device having a laminated structure in which the external conductive plate mounting surfaces of the P terminal and the N terminal have a pair of conductive plates and an insulating layer interposed therebetween. Of the external conductive plates, the mounting surfaces of one of the conductive plates and the mounting surface of the other conductive plate are made to coincide with each other, and the external conductive plates of the P terminal and the N terminal are provided from the cooling metal base. It is characterized in that they are arranged with a difference in height to the mounting surface. When connecting the external conductive plate to the electrode terminals, unnecessary processing of the external conductive plate is eliminated.

In a power semiconductor device according to a seventh aspect of the present invention, the control terminal for controlling the operation of the circuit pattern including the semiconductor chip is the main circuit terminal for external connection in the quadrangle. It is characterized in that it is provided at the edge of the side that is not provided. Wiring of the control terminal is facilitated.

In the power semiconductor device according to the present invention of claim 8, a plurality of mounting holes for mounting an external conductive plate are provided in at least one electrode terminal of the plurality of main circuit terminals for external connection. It is characterized by that. By mounting with a plurality of bolts, the contact area is increased.

In a power semiconductor device according to a ninth aspect of the present invention, a plurality of mounting holes provided in the at least one electrode terminal are used for fastening the cooling metal base to an external cooling member. It is characterized in that it is formed in a hole in which the same bolt as that used can be used. By using common bolts, the installation workability is improved.

In the power semiconductor device according to a tenth aspect of the present invention, at least one of the plurality of mounting holes provided in the at least one electrode terminal has a diameter different from that of the other holes. Is characterized by. It is made available when connecting other components and circuits.

According to the eleventh aspect of the present invention, there is provided a power semiconductor device, wherein the holes having different diameters are provided in the P terminal and the N terminal, respectively, and a capacitor is provided between the P terminal and the N terminal. It is characterized by installing.

According to a twelfth aspect of the present invention, in the power semiconductor device according to the present invention, the plurality of semiconductor chips are adjacent to the pair of opposing sides along a pair of opposing sides of the quadrilateral of the cooling metal base. Mounting holes for mounting the cooling metal base to an external cooling member are formed at edges of the cooling metal base along the pair of opposing sides, and the plurality of external connections are provided. Main circuit terminals are provided so as to project to the outside from sides other than the pair of facing sides of the cooling metal base in which the mounting bolt holes are formed. In order to arrange the external connection main circuit terminal so that the external conductive plate can be easily connected, the side where the mounting bolt hole is provided and the side where the external connection main circuit terminal is provided are separate and yet a sufficient heat dissipation effect is secured. To do.

According to a thirteenth aspect of the present invention, a plurality of power semiconductor devices according to any one of the fourth to twelfth aspects are arranged in parallel, and each external power semiconductor device corresponds to each external device. The present invention relates to a combined power semiconductor device in which main circuit terminals for connection are connected by a bus bar and combined. The power semiconductor device described in each of the above claims can be easily attached to the external conductive plate, and by utilizing this, a plurality of power semiconductor devices can be efficiently combined.

A semiconductor device for combined power use according to a fourteenth aspect of the present invention is characterized in that a single or a plurality of capacitors are attached to the bus bar. A capacitor is arranged adjacent to the external connection main circuit terminal to reduce the inductance.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of a semiconductor power module according to the present invention will be described with reference to the drawings. FIG. 1 shows the internal structure of a semiconductor power module 10 according to this embodiment. In the figure, in a semiconductor power module 10 according to the present embodiment, an insulating substrate 2 is fixed to a cooling metal base 1, and a circuit pattern 3 is fixed to the surface of the insulating substrate 2. Circuit pattern 3
A plurality of semiconductor chips 4 are connected to and mounted by soldering or the like. As shown in the figure, the semiconductor chips 4 are arranged along a pair of opposing sides extending in the vertical direction of the drawing of the quadrilateral cooling metal base 1, and the laminated electrode plates 6 are opposed to each other. Semiconductor chip 4 parallel to the side
Is arranged in the middle of the two arrays.

FIG. 2 shows the structure of the laminated electrode plate 6 viewed from the side and the connection state with the semiconductor chip 4. The laminated electrode plate 6 is composed of three layers of electrode plates 6a, 6b, 6c, and each electrode plate 6a, 6b, 6c is connected with each terminal of the semiconductor chip 4 and the circuit pattern 3, respectively. Each electrode plate 6a, 6b, 6c has an insulating layer 7 disposed underneath them.
A laminated structure is formed with a, 7b and 7c.
These insulating layers 7a, 7b and 7c are insulated from each other.

Each of the electrode plates 6a, 6b, 6c extends to the outside of a resin case (not shown) and, like the one shown in FIG. 9, is a main circuit terminal for external connection P on the upper surface of the semiconductor power module 10, for example. A terminal, an N terminal, and an AC terminal are formed. The interior space surrounded by the resin case is filled with a filler such as silicon gel, which is the same as the conventional semiconductor power module 50.

A semiconductor power module 10 according to the present embodiment shown in FIG. 1 has a cooling metal base 1 at the edges of a pair of opposing sides extending in the vertical direction of the drawing, such as a radiation fin serving as an external cooling member. There are four mounting bolt holes 16 each for tightening. The number of the mounting bolt holes 16 can be arbitrarily selected according to the heat generation amount of the semiconductor chip 4 and other conditions. A control terminal 14 is also provided on the pair of opposing sides.

During operation of the semiconductor power module 10 configured as described above, the direct current flowing from the P terminal 61 to the N terminal 62 is converted into an alternating current by the action of the semiconductor chip 4 based on the command from the control terminal 14. This alternating current is applied to the alternating current terminal 63 (each terminal 61, 62, 63 is shown in FIG.
Output). At this time, the semiconductor chip 4 generates a large amount of heat, but the generated heat is transferred from the insulating substrate 2 to the cooling metal base 1, and the heat is further radiated by bolts through the mounting bolt holes 16. Heat is radiated to the external cooling member such as fins.

The advantages of the semiconductor power module 10 according to this embodiment are as follows. First, in the semiconductor power module 10 shown in FIG. 1, a plurality of semiconductor chips 4 that cause heat generation are arranged adjacent to a pair of opposing sides of a quadrilateral cooling metal base 1, Plural (four in the illustrated example) mounting bolt holes 16 are provided at the edges of the pair of opposing sides. As described above, the portion where the cooling metal base 1 is tightened and bolted to the heat radiating fins is the effective heat radiating portion. In the present embodiment, the mounting bolt holes 16 are along the semiconductor chip 4 which is the heat source. Are provided adjacent to each other. For this reason, the heat dissipation effect is high, the number of required mounting bolt holes 16 (that is, the number of tightening bolts) can be reduced, and a semiconductor power module capable of handling a large current by utilizing the high heat dissipation effect is provided. It can be realized.

In addition, in the semiconductor power module 10 according to the present embodiment, the laminated electrode plate 6 is disposed in the center of the semiconductor power module 10 in parallel with the pair of opposing sides in the middle of the two arrays of the semiconductor chips 4. It is arranged so as to cross the section. For this reason, there is no member that generates heat in the central portion of the semiconductor power module 10, and therefore the mounting bolt holes 16 for releasing the heat generated in the central portion to the outside are made substantially even over all sides of the semiconductor power module. No need to provide. As a result, the mounting bolt holes 16 for fastening the cooling metal base 1 to the radiation fins are provided only in the edge portions of the pair of opposing sides adjacent to the arrangement of the semiconductor chips 4, and
Sufficient heat dissipation becomes possible. This means that it is not necessary to provide the mounting bolt holes 16 on the sides other than the pair of facing sides (in the example of FIG. 1, the pair of facing sides located above and below). The non-perforated side can be effectively used for other purposes, as will be shown in later embodiments.

Mounting bolt holes 16 are provided at each vertex of the quadrangle of the cooling metal base 1 (indicated by 16x in FIG. 1). In this specification, these mounting bolt holes 16x at the apex are to be understood as belonging to the same side as the pair of opposing sides where the other mounting bolt holes 16 are provided. Therefore, the term "side not provided with the mounting bolt hole 16" means each side of the portion excluding the mounting bolt hole 16x at the apex.

A further advantage of the internal structure of the semiconductor power module 10 according to the present embodiment is that the laminated electrode plate 6 has a laminated structure so that the respective electrode plates 6a, 6b, 6 are formed.
This means that the mutual inductance between c can be minimized. As a result, it is possible to obtain the effect of suppressing the failure caused by the back electromotive force when the semiconductor power module 10 is started or shut off, or when the voltage changes.

Next, a semiconductor power module according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 shows a plan view of the semiconductor power module 20 according to the present embodiment. Hereinafter, the same reference numerals will be used for the same components as those used in the previous embodiment. In FIG. 3, the semiconductor power module 20 according to the present embodiment is provided with four mounting bolt holes 16 at the edges of a pair of opposing sides of the quadrilateral cooling metal base 1 and covered with a resin case 8. The laminated electrode plate 6 and the semiconductor chip 4 are arranged in the opened interior, similarly to the structure shown in FIG. Further, the mounting bolt holes 16 are arranged at the edges of a pair of opposing sides adjacent to the two arrays of the semiconductor chips 4 as shown in FIG. Therefore, it is possible to obtain a sufficient heat dissipation effect without providing the mounting bolt holes 16 on the other sides of the quadrangle except the pair of opposing sides.

In the semiconductor power module 20 according to the present embodiment, one side of the pair of facing sides in which the mounting bolt holes 16 are not provided is a main circuit terminal for external connection for DC P. Terminals 21 and N terminals 22 are provided, and AC external connection main circuit terminals, that is, AC terminals 23 are provided on the other sides facing the terminals 21, respectively, so as to project outside the cooling metal base 1. However, the arrangement of these terminals 21, 22, and 23 is merely an example, and the arrangement can be arbitrarily changed according to the purpose. Mounting bolt hole 16
A control terminal 14 is provided on each of a pair of opposing sides provided with.

FIG. 4 shows a usage state of the semiconductor power module 20 configured as shown in FIG. In the figure, the P terminal 21 of the semiconductor power module 20 has a first conductive plate 26, and the N terminal 22 has a second conductive plate 27.
However, the third conductive plates 28 are attached to the AC terminals 23 by bolts 31, respectively. In the illustrated example, the first conductive plate 26 and the second conductive plate 27 are individually provided, but a bus bar 70 having a laminated structure as shown in FIG. 11 is connected to the P terminal 21 and the N terminal 22. May be. A control wire 29 is connected to the control terminal 14, and a bolt 32 is inserted into each mounting bolt hole 16 to fasten the above-mentioned cooling metal base 1 to a radiation fin or the like which is an external cooling member. .

The operation of the semiconductor power module 20 having the above-described structure is similar to that described in the previous embodiment, and the direct current flowing from the P terminal 21 to the N terminal 22 is operated by the semiconductor chip 4. It is converted into an alternating current of an arbitrary frequency, and the alternating current is transferred from the alternating current terminal 23 to the conductive plate 28.
Output to. At this time, the heat generated in the semiconductor chip 4 is
It is transmitted from the cooling metal base 1 to the cooling member (radiation fin) fastened with the bolt 32, and is discharged to the outside.

As shown in FIGS. 3 and 4, in the semiconductor power module 20 according to the present embodiment, the sides other than the pair of opposing sides where the mounting bolt holes 16 (bolts 32) are provided are used. Since the terminals 21, 22, and 23 can be provided so as to project, it is extremely easy to attach and connect the conductive plates 26, 27, and 28 to the terminals 21, 22, and 23. Further, since workability is good, reliable bolt tightening and connection can be obtained.

A conventional semiconductor power module 50 (see FIG. 9)
In the case of arranging each of the terminals 21, 22, and 23 as described above in (1), assuming that the number of the bolts 32 for tightening the radiation fins is increased in consideration of heat dissipation, the heat source is located in the central portion. Therefore, the mounting bolt hole 16 of the bolt 32 is shown by, for example, a broken line in FIG.
It is necessary to provide over the entire circumference of the semiconductor power module including the position of a. Mounting bolt hole 1 in this state
When the bolt 32 is fastened to the 6a, the bolt 32 comes very close to the conductive plates 26 and 27, resulting in a short insulation distance, which may cause a problem such as dielectric breakdown. This is also the case when the bus bar 70 having a laminated structure is used, and since the bus bar 70 covers the bolt 32 immediately above, the insulation distance becomes insufficient, and dielectric breakdown may occur.

The insulation distance required in this case is about 8 mm when the output voltage is 1200 V, for example. In order to avoid dielectric breakdown, conventionally, the distance between the P terminal 21 and the N terminal 22 is increased, the size of the conductive plates 26, 27 is reduced, or the bus bar 70 is separated from the bolt 32 by an insulation distance or more. Therefore, it is necessary to take measures such as arranging the semiconductor power modules, and as a result, the degree of freedom in design is reduced, which may lead to an increase in the size of the semiconductor power module.

In the semiconductor power module 20 according to the present embodiment, the terminals 21, 22, 23 are arranged on the sides other than the pair of opposite sides where the mounting bolt holes 16 are provided. The bolt 32 is not arranged at the position of the mounting bolt hole 16a shown by the broken line, and therefore the above-mentioned problem of dielectric breakdown does not occur.

The configuration in which the external connection main circuit terminals 21, 22, and 23 are provided outside the quadrilateral of the semiconductor power module according to the present embodiment in a projecting manner, for example, as shown in FIG. The semiconductor power module 50 according to the present invention can also be applied to the semiconductor power module 50 having the structure in which the mounting bolt holes 66 of the radiation fin fastening bolts are arranged only at each vertex of the quadrangle. If the mounting bolt holes (16, 66) are only the vertices of the quadrangle, the terminals 21, 22,
Since a space for projecting 23 can be obtained and necessary heat dissipation is also performed, there is no fear of the above-mentioned dielectric breakdown due to the addition of holes for mounting bolts.

Next, a semiconductor power module according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 5 shows a situation in which the bus bar 70 is attached to the P terminal 21 and the N terminal 22 of the semiconductor power module 20 having the structure shown in FIG. The main part of the semiconductor power module 20 is located on the front side of the drawing, and the P terminal 21 is shown in the drawing.
And the terminals other than the N terminal 22 are omitted. The P terminal 21 is connected to the upper conductive plate 71 of the bus bar 70, and the N terminal 22 is connected to the lower conductive plate 72 with the insulating layer 73 interposed therebetween.

As is apparent from the figure, the external conductive plate mounting surfaces of the P terminal 21 and the N terminal 22 according to the present embodiment have different heights from the cooling metal base 1 and are connected to them. It is provided so as to match the height of the conductive plates 71, 72 of the bus bar 70. Specifically, both terminals 2
The height difference Δh of the outer conductive plate mounting surface of Nos. 1 and 22 is the difference d between the lower surface of the upper conductive plate 71 and the lower surface of the lower conductive plate 72.
Match.

P terminal 2 of the semiconductor power module 20
By arranging the 1 and N terminals 22 at different heights in this way, the terminals 21 and 2 can be formed without bending the bus bar 70.
Can be connected to 2. Since the AC terminals 23 are provided on the other sides of the cooling metal base 1 that face each other, there is no need to provide through holes (holes denoted by reference numeral 76 in FIG. 12) in the bus bar 70. Can be easily connected.

Next, a semiconductor power module according to a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 6 shows a semiconductor power module 20a according to this embodiment. The semiconductor power module 20a according to the present embodiment includes a P terminal 21a and an N terminal 22.
Each of the a and the AC terminal 23a has three holes for attaching a conductive plate. Other configurations and operations are the same as those of the semiconductor power module 20 according to the second or third embodiment. Similarly, the conductive plates 26a, 27a, and 28a attached to the terminals 21a, 22a, and 23a of the semiconductor power module 20a are also provided with three holes, respectively. It is concluded. In the drawing, the conductive plate 27a connected to the N terminal 22a is omitted so that the mounting hole 33 provided in the N terminal 22a can be seen.

In the semiconductor power module 20a configured as described above, the conductive plates 26a, 27 are formed by using the three bolts 31a for each of the terminals 21a, 22a, 23a.
Since a and 28a are tightened and connected, the contact area between each terminal and the conductive plate is increased, the voltage drop on the contact surface is small, and the transmission loss due to the voltage drop can be reduced. When one bolt 31 is used for each terminal as shown in FIG. 4 to cope with a large current, the diameter of the bolt 31 becomes large, and accordingly, the electrodes 21, 22, 23 must be made large. As a result, the semiconductor power module 20 is not obtained.
Also became larger. Further, the torque for tightening the bolt 31 also increases.

As shown in FIG. 6, by attaching each conductive plate using three bolts 31a, each terminal 21
Since the a, 22a, and 23a can be small in size to obtain a sufficient contact surface, and a large torque required for fastening with the large-diameter bolt 31 is not required, the mounting work is easy. Further, if the bolt 31a used at this time can be shared with the bolt 32 for fastening the cooling metal base 1, it is not necessary to distinguish between the two bolts 31a, 32, and the same fastening wrench can be used. The installation work will be efficient.

In FIG. 6, each electrode terminal 21a, 22
Although three mounting holes 33 are provided in a and 23a, the number can be two or any number depending on the requirement. The number of bolts used is 31.
It can also be selected in relation to the size of a. Further, the number of the mounting holes 33 provided in each of the electrode terminals 21a, 22a and 23a does not necessarily have to be the same, and an arbitrary number can be selected for each of the electrode terminals as required.

FIG. 7 shows another mode of the semiconductor power module 20a according to the present embodiment. Here, one of a plurality of mounting holes formed in the P terminal 21b and the N terminal 22b is used. The diameter of the capacitor is changed and the hole is used to mount the capacitor 35 between the terminals 21b and 22b with the bolt 34. Other configurations are similar to those of the semiconductor power module 20a shown in FIG. 6, and details thereof are omitted.

In the conventional semiconductor power module, since the conductive plate or the bus bar 70 is arranged so as to cover the P terminal and the N terminal on the upper surface, it is extremely difficult to attach other components such as the capacitor 35. . In the present embodiment in which the terminals 21b and 22b are provided so as to project from the cooling metal base 1 to the outside, it is extremely easy to attach small parts such as such a capacitor or another electronic circuit.

FIG. 8 shows a combination of semiconductor power modules 20a according to the present embodiment shown in FIG. 6 in which a plurality of semiconductor power modules 20a are arranged in parallel in the lateral direction so as to cope with a larger current. Shows. In the figure, the P terminal 21 of each semiconductor power module 20a
The plurality of semiconductor power modules 20a are attached to the a and N terminals 22a (located under the bus bar 70, respectively).
A bus bar 70 connecting the two is connected. At this time, the P terminal 21a and the N terminal 2 of each semiconductor power module 20a
By providing a height difference as shown in FIG. 5 with 2a, the connection can be tightened without bending the connection portion of the bus bar 70, and efficient attachment can be achieved. A control wiring 29 is connected to the control terminal 14 so as to straddle each semiconductor power module 20a. Also,
A large number of smoothing capacitors 36 are attached to the bus bar 70.

According to the semiconductor power module 20a of the present embodiment, the terminals 21a, 22a and 23a are provided so as to project to the outside of the semiconductor power module 20a.
It becomes possible to dispose it away from a, which facilitates connection, and also attaches the capacitor 36 and controls wiring 29.
The arrangement is also very easy. Further, since the capacitor 36 can be arranged at a short distance from the P terminal 21a and the N terminal 22a as shown in the figure, it is possible to obtain the effect of reducing the inductance. Conventional semiconductor power module 50
In (see FIG. 9), the bus bar 70 needs to be arranged so as to cover the upper portion of the semiconductor power module 50. Therefore, connection to the P terminal 61, the N terminal 62, and the AC terminal 63 is troublesome, and at the same time, It was a constraint when arranging multiple units.

In the example shown in FIG. 8, the semiconductor power module 20 of the type in which each terminal is fastened with three bolts.
"a" is displayed, but this is a semiconductor power module 2 of the type that is tightened with one bolt 31 as shown in FIG.
Even if the number is 0, a plurality of groups can be similarly arranged.

Further, although the figure shows a state in which two semiconductor power modules 20a are connected, the number of these semiconductor power modules can be further increased if necessary. Connection using a bus bar is also possible for the AC terminal 23a, and thus the AC terminal 23a which is the main circuit terminal for external connection for AC and the P terminal 21a, N which is the main circuit terminal for external connection for DC. By arranging the terminals 22a on the sides different from each other, not only the DC input but also the output from the AC terminal 23a can be easily taken out.

[0057]

According to the present invention described in claims 1 to 3, the heat generated in the semiconductor chip can be effectively radiated from the cooling metal base to the external cooling member even with a small number of bolts. A power semiconductor device can be provided.

According to the present invention as set forth in claims 4 to 12, the main circuit terminal for external connection is provided so as to project outside the quadrangle of the cooling metal base, so that the conductive plate for direct current input and the alternating current It is possible to provide a power semiconductor device in which the output conductive plates can be efficiently arranged and the conductive plates can be easily attached to the terminals.

According to the thirteenth and fourteenth aspects of the present invention, it is possible to provide a high capacity combined power semiconductor device in which a plurality of power semiconductor devices are connected in parallel with a simple structure.

[Brief description of drawings]

FIG. 1 is a plan view showing a semiconductor power module according to one embodiment of the present invention.

FIG. 2 is a partial side sectional view showing the internal structure of the semiconductor power module shown in FIG.

FIG. 3 is a plan view showing a semiconductor power module according to another embodiment of the present invention.

FIG. 4 is a plan view showing a usage state of the semiconductor power module shown in FIG.

FIG. 5 is a perspective view showing a connection state between a semiconductor power module and a bus bar according to still another embodiment of the present invention.

FIG. 6 is a plan view showing a semiconductor power module according to still another embodiment of the present invention.

7 is a plan view showing another aspect of the semiconductor power module shown in FIG.

FIG. 8 is a plan view showing a combined semiconductor power module in which a plurality of semiconductor power modules shown in FIG. 6 are arranged.

FIG. 9 is a plan view showing a semiconductor power module according to a conventional technique.

FIG. 10 is a partial cross-sectional view showing an internal structure of a semiconductor power module according to a conventional technique.

FIG. 11 is a perspective view showing a laminated structure of an external conductive plate (bus bar).

12 is a cross-sectional view showing a state in which the external conductive plate shown in FIG. 11 is connected to a semiconductor power module.

[Explanation of symbols]

1 metal base for cooling, 2 insulating substrate, 3 circuit pattern, 4 semiconductor chip, 6 laminated electrode plate, 6
a, 6b, 6c electrode plate, 7a, 7b, 7c insulating layer,
8 resin case, 10 semiconductor power module,
14 control terminals, 16 mounting bolt holes, 2
0, 20a semiconductor power module, 21 P terminal,
22 N terminal, 23 AC terminal, 31 V,
32 volts, 70 busbars.

Claims (14)

[Claims] 1. A quadrilateral plate-shaped cooling metal base, an insulating substrate fixed to the cooling metal base, a plurality of semiconductor chips mounted on a circuit pattern formed on the insulating substrate, and the circuit. A pattern and a plurality of electrode plates to which each terminal of the semiconductor chip is connected; a case that surrounds the insulating substrate, the semiconductor chip, the electrode plate and is fixed to the cooling metal base; and a plurality of electrodes extending from each electrode plate. A main circuit terminal for external connection, and a plurality of semiconductor chips, the plurality of semiconductor chips along a pair of opposing sides of the quadrilateral of the cooling metal base along the pair of opposing sides. Mounting bolt holes, which are arranged adjacent to each other, for mounting the cooling metal base to an external cooling member, are formed at edges of the cooling metal base along the pair of opposite sides. Power semiconductor device, characterized by being. 2. The plurality of electrode plates are arranged in the middle of two arrangements of the semiconductor chips arranged along the pair of opposite sides so as to extend substantially parallel to the pair of opposite sides. The power semiconductor device according to claim 1, wherein the power semiconductor device is a power semiconductor device. 3. The power semiconductor device according to claim 2, wherein the plurality of electrode plates have a laminated structure in which the electrode plates are sequentially stacked with an insulating layer interposed therebetween. 4. A quadrilateral plate-shaped cooling metal base, an insulating substrate fixed to the cooling metal base, a plurality of semiconductor chips mounted on a circuit pattern formed on the insulating substrate, and the circuit. A pattern and a plurality of electrode plates to which each terminal of the semiconductor chip is connected; a case that surrounds the insulating substrate, the semiconductor chip, the electrode plate and is fixed to the cooling metal base; and a plurality of electrodes extending from each electrode plate. In the power semiconductor device including an external connection main circuit terminal, the plurality of external connection main circuit terminals are provided so as to project outside from the cooling metal base. Semiconductor device. 5. Of the plurality of main circuit terminals for external connection,
The P terminal and the N terminal forming the main circuit terminal for external connection for direct current are external to one side of the quadrilateral, and the AC terminal forming the main circuit terminal for external connection for alternating current is external to the side facing the one side. Characterized in that it is provided to protrude
The power semiconductor device according to claim 4. 6. The external conductive plate mounting surface of each of the P terminal and the N terminal has a laminated structure of a pair of conductive plates and an insulating layer interposed therebetween, to mount one of the external conductive plates. The heights of the surface and the mounting surface of the other conductive plate are made to coincide with each other, and a difference is provided between the heights of the cooling metal base and the mounting surfaces of the external conductive plates of the P terminal and the N terminal. The power semiconductor device according to claim 5, wherein the power semiconductor device is provided. 7. A control terminal for controlling an operation of a circuit pattern including the semiconductor chip is provided at an edge portion of a side of the quadrilateral where the main circuit terminal for external connection is not provided. The power semiconductor device according to claim 5, wherein the power semiconductor device is a power semiconductor device. 8. The method according to claim 4, wherein at least one electrode terminal of the plurality of main circuit terminals for external connection is provided with a plurality of mounting holes for mounting an external conductive plate. 2. The power semiconductor device according to any one of items. 9. A plurality of mounting holes formed in the at least one electrode terminal are formed in holes that can be used with the same bolts used to fasten the cooling metal base to an external cooling member. The semiconductor device for electric power according to claim 8, wherein the semiconductor device for electric power is provided. 10. The power semiconductor according to claim 8, wherein at least one of the plurality of mounting holes provided in the at least one electrode terminal has a diameter different from that of the other holes. apparatus. 11. The capacitor according to claim 10, wherein holes having different diameters are provided in the P terminal and the N terminal, respectively, and a capacitor is attached between the P terminal and the N terminal. Power semiconductor device. 12. The plurality of semiconductor chips are arranged along a pair of opposing sides of a quadrilateral of the cooling metal base adjacent to the pair of opposing sides, and the cooling metal base is externally arranged. Mounting bolt holes for mounting on the cooling member are formed at edge portions along the pair of opposing sides of the cooling metal base, and the plurality of external connection main circuit terminals have the mounting bolt holes. The power semiconductor device according to any one of claims 4 to 11, wherein the cooling metal base is provided so as to project outside from a side other than a pair of opposite sides of the formed metal base. . 13. A plurality of power semiconductor devices according to any one of claims 4 to 12 are arranged in parallel, and the corresponding main circuit terminals for external connection of each power semiconductor device are connected to each other by a bus bar. A semiconductor device for combined power, characterized in that the semiconductor devices are connected and combined with each other. 14. The semiconductor device for combined power use according to claim 13, wherein one or more capacitors are attached to the bus bar.