JP2003119568A - 無電解めっき方法及び装置 - Google Patents
無電解めっき方法及び装置Info
- Publication number
- JP2003119568A JP2003119568A JP2001313073A JP2001313073A JP2003119568A JP 2003119568 A JP2003119568 A JP 2003119568A JP 2001313073 A JP2001313073 A JP 2001313073A JP 2001313073 A JP2001313073 A JP 2001313073A JP 2003119568 A JP2003119568 A JP 2003119568A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electroless plating
- wiring
- copper
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 238000007747 plating Methods 0.000 claims abstract description 50
- 239000010949 copper Substances 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 16
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract 2
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000011084 recovery Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001453 nickel ion Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 101000854908 Homo sapiens WD repeat-containing protein 11 Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 102100020705 WD repeat-containing protein 11 Human genes 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001313073A JP2003119568A (ja) | 2001-10-10 | 2001-10-10 | 無電解めっき方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001313073A JP2003119568A (ja) | 2001-10-10 | 2001-10-10 | 無電解めっき方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003119568A true JP2003119568A (ja) | 2003-04-23 |
| JP2003119568A5 JP2003119568A5 (https=) | 2004-12-24 |
Family
ID=19131624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001313073A Pending JP2003119568A (ja) | 2001-10-10 | 2001-10-10 | 無電解めっき方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003119568A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010535415A (ja) * | 2007-07-31 | 2010-11-18 | リニューアブル・エナジー・コーポレーション・エーエスエー | 太陽電池の裏面上にコンタクトを設ける方法、及び該方法によって設けられた接点を有する太陽電池 |
| WO2013180064A1 (ja) * | 2012-05-30 | 2013-12-05 | 東京エレクトロン株式会社 | めっき処理方法、めっき処理装置および記憶媒体 |
| CN113078060A (zh) * | 2020-01-06 | 2021-07-06 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置和存储介质 |
-
2001
- 2001-10-10 JP JP2001313073A patent/JP2003119568A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010535415A (ja) * | 2007-07-31 | 2010-11-18 | リニューアブル・エナジー・コーポレーション・エーエスエー | 太陽電池の裏面上にコンタクトを設ける方法、及び該方法によって設けられた接点を有する太陽電池 |
| WO2013180064A1 (ja) * | 2012-05-30 | 2013-12-05 | 東京エレクトロン株式会社 | めっき処理方法、めっき処理装置および記憶媒体 |
| JP2013251344A (ja) * | 2012-05-30 | 2013-12-12 | Tokyo Electron Ltd | めっき処理方法、めっき処理装置および記憶媒体 |
| US10138556B2 (en) | 2012-05-30 | 2018-11-27 | Tokyo Electron Limited | Plating method, plating apparatus, and storage medium |
| CN113078060A (zh) * | 2020-01-06 | 2021-07-06 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置和存储介质 |
| CN113078060B (zh) * | 2020-01-06 | 2024-03-26 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置和存储介质 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040122 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040122 |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051219 |
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| A02 | Decision of refusal |
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