JP2003115740A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that a reference signal generated by a crystal resonator is largely attenuated in a wiring layer. SOLUTION: A crystal device 6 consisting of a base 1 which has a mounting portion for mounting a crystal resonator 5 and a wiring layer 2 led out to the external surface from the mounting portion, the crystal resonator 5 which is fixed on the mounting portion of the base 1 and has electrodes being electrically connected to the layer 2, and a lid 3 which is mounted on the base 1 to house the resonator 5 hermetically. The base 1 is made of a crystalline glass containing 40-46 wt.% silicon oxide, 25-30 wt.% aluminum oxide, 8-13 wt.% magnesium oxide, 6-9 wt.% zinc oxide and 8-11 wt.% boron oxide. The layer 2 is formed of a metallic material having a specific electric resistance of 2.5 μΩ/cm or less, and the resonator 5 is mounted on the mounting portion of the base 1 via a supporting body 7 having an elastic modulus of 2.8 GPa or less.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal device used as a reference source of time and frequency in an information processing device such as a computer and an electronic device such as a mobile phone.

[0002]

2. Description of the Related Art A crystal device used as a time and frequency reference source in an information processing device such as a computer or an electronic device such as a mobile phone generally has a square plate-shaped crystal substrate on which electrodes for voltage application are formed. A crystal unit
It is formed by hermetically housing in a crystal unit housing package.

The crystal unit housing package is generally made of an electrically insulating material such as an aluminum oxide sintered body, and has a recess for forming a space for accommodating the crystal unit in the center of the upper surface and a recess surface. And a substrate having a wiring layer made of a metal material such as a refractory metal such as tungsten and molybdenum, which is derived from the outer surface to the outer surface, and iron-nickel-
The cover member is made of a metal material such as a cobalt alloy or an iron-nickel alloy, or a ceramic material such as an aluminum oxide sintered body.

Then, the electrodes of the crystal unit are attached to the wiring layer exposed on the inner surface of the recess of the base body and the peripheral surface of the base body through a fixing material, whereby the crystal unit is adhered and fixed in the recess. It is electrically connected to the wiring layer together, and then the lid is attached to the upper surface of the base by a bonding means such as bonding with an adhesive or seam welding, and the crystal oscillator is placed inside the container composed of the base and the lid. The crystal device as a product is completed by hermetically containing it.

As a fixing material for mounting the crystal unit, a conductive adhesive material is generally used which is a mixture of an organic resin such as epoxy resin and a conductive powder such as silver powder as a main material. It is used.

When the lid is attached to the substrate by seam welding, a frame-shaped brazing metallization layer is usually formed in advance around the recess of the substrate, and the metal frame is brazed to the metallized layer. Then, a method of seam welding the lid to the metal frame is used.

Further, the crystal device is mounted on an external electric circuit board by connecting the wiring layer led out to the outer surface of the substrate to the wiring conductor of the external electric circuit board through a conductive connecting material such as solder. The crystal oscillator is electrically connected to the external electric circuit via the wiring layer and vibrates at a predetermined frequency according to the voltage applied from the external electric circuit to supply the reference signal to the external electric circuit.

[0008]

However, in the conventional crystal device, the base body is formed of an aluminum oxide sintered body, and the relative permittivity of the aluminum oxide sintered body is 9 to 10 (room temperature, 1 MHz). Therefore, the propagation speed of the reference signal of the crystal unit transmitted through the wiring layer provided on the substrate is slow, so that the crystal unit that sets the reference signal to a high frequency and requires high-speed signal transmission cannot be accommodated. Had a drawback that it was specified to be low.

In this conventional crystal device, the wiring layer formed on the substrate is made of a refractory metal material such as tungsten, molybdenum or manganese, and the specific electrical resistance of the tungsten or the like is 5.4 μΩ.
Since it is as high as cm (20 ° C.) or more, when the reference signal is propagated to the wiring layer, the reference signal is greatly attenuated, and the reference signal cannot be accurately and surely propagated to the external electric circuit. Was.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a crystal device capable of supplying a reference signal of a crystal resonator to an external electric circuit at high speed, accurately and surely. is there.

[0011]

According to the present invention, there is provided a base having a mounting portion on which a crystal unit is mounted, and a wiring layer extending from the mounting portion to an outer surface, and a mounting portion of the base. A quartz crystal device in which electrodes are electrically connected to the wiring layer and a lid body attached to the base body and hermetically housing the quartz crystal device,
The substrate comprises 40 to 46% by weight of silicon oxide, 25 to 30% by weight of aluminum oxide, 8 to 13% by weight of magnesium oxide, and 6 to 9% by weight of zinc oxide.
To 11% by weight of boron oxide, the wiring layer is made of a metal material having a specific electric resistance of 2.5 μΩ · cm or less, and the crystal unit has an elastic modulus of 2.8 GPa. It is characterized in that it is mounted on the mounting portion of the base through the following supports.

The crystal device of the present invention is characterized in that the support is made of an epoxy resin containing rubber particles.

According to the crystal device of the present invention, the substrate is divided into four parts.
From 0 to 46% by weight of silicon oxide, 25 to 30% by weight of aluminum oxide, 8 to 13% by weight of magnesium oxide, 6 to 9% by weight of zinc oxide, and 8 to 11% by weight of boron oxide. It is made of crystalline glass and has a low relative permittivity of about 5 (room temperature 1 MHz). Therefore, it is assumed that the crystal signal transmitted through the wiring layer on the substrate has a high propagation speed of the reference signal. It is possible to accommodate a crystal resonator that requires a high frequency signal and requires high-speed propagation of the signal, and the frequency of the reference signal can be made extremely high.

At the same time, since the above-mentioned crystalline glass has a low firing temperature of 850 to 1100 ° C., the substrate and the wiring layer formed by the simultaneous firing have a specific electric resistance of 2.5 μΩ · cm.
It can be made of copper, silver, or gold that is as low as or less than that, and as a result, when the reference signal of the crystal unit is propagated to the wiring layer,
The reference signal can be accurately and surely propagated to the external electric circuit without causing a large attenuation in the reference signal.

Further, according to the crystal device of the present invention, a support having an elastic modulus of 2.8 GPa or less, which is made of, for example, an epoxy resin containing rubber particles, is attached to the mounting portion of the base, and the support is attached. Since the crystal unit is bonded and fixed with a fixing material, heat repeatedly acts on the base and the crystal unit as the external environment changes, and the difference in the thermal expansion coefficient between the base and the crystal unit Even if the resulting thermal stress is repeatedly generated, the thermal stress is absorbed by deforming the support body appropriately, and the fixation of the crystal unit to the base is not broken. It is possible to securely and firmly fix the quartz device over a period of time, and it is possible to enhance the long-term reliability of the crystal device.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a crystal device of the present invention will be described in detail with reference to the accompanying drawings. 1 is a sectional view showing an embodiment of the crystal device of the present invention. In FIG. 1, 1 is a base, 2 is a wiring layer, and 3 is a lid. A crystal device 6 is formed by hermetically accommodating a crystal resonator 5 in a container 4 formed by the base 1 and the lid 3.

The substrate 1 contains 40 to 46% by weight of silicon oxide and 25 to 30% by weight of aluminum oxide.
-13% by weight magnesium oxide, 6-9% by weight
Is formed of crystalline glass composed of zinc oxide and 8 to 11% by weight of boron oxide, and a concave portion 1a serving as a cavity for accommodating the crystal resonator 5 is provided on the upper surface thereof. The crystal unit 5 is housed in the recess 1a.

The wiring layer 2 is led out from the surface of the concave portion 1a to the outer surface of the base body 1, and the electrode of the crystal resonator 5 is made of a conductive adhesive or the like at the portion of the wiring layer 2 exposed on the surface of the concave portion 1a. The portion that is adhesively fixed via the fixing material 8 and is led to the outer surface is connected to the wiring conductor of the external electric circuit board through a brazing material such as solder.

The substrate 1 made of crystalline glass is a slurry prepared by adding a binder and a dispersant having an acrylic resin as a main component, a plasticizer and an organic solvent to a raw material powder such as silicon oxide, aluminum oxide and magnesium oxide. A green sheet (raw sheet) by making the sludge and adopting the doctor blade method or calendar roll method
After that, appropriate punching processing is applied to the green sheet and a plurality of these are laminated, and the temperature is about 850 ° C.
It is manufactured by firing at a temperature of ˜1100 ° C.

The substrate 1 comprises 40 to 46% by weight of silicon oxide, 25 to 30% by weight of aluminum oxide, 8 to 13% by weight of magnesium oxide, 6 to 9% by weight of zinc oxide, and 8 to 11%. When formed of crystalline glass composed of boron oxide by weight%, the relative permittivity of the substrate 1 becomes a low value of about 5 (room temperature 1 MHz), and as a result, the crystal resonator 5 transmitted through the wiring layer 2 provided on the substrate 1 It is possible to accommodate the crystal oscillator 5 that requires a high-speed propagation of the reference signal by setting the propagation speed of the reference signal to a high frequency, and the frequency of the reference signal can be made extremely high.

Since the above-mentioned crystalline glass has a low firing temperature of about 850 ° C. to 1100 ° C., the substrate 1 and the wiring layer 2 formed by simultaneous firing have a specific electric resistance of 2.5 μm.
It can be formed of copper, silver, or gold as low as Ω · cm (20 ° C.) or lower, and as a result, when the reference signal of the crystal unit 5 is propagated to the wiring layer 2, the reference signal is greatly attenuated. Instead, the reference signal can be accurately and reliably propagated to the external electric circuit.

The crystalline glass is formed by firing garnite (ZnO.Al ₂ O ₃ ) and cordierite (2MgO).
.2Al ₂ O ₃ ), spinel type crystal phase (MgO.Al
₂ O ₃ , ZnO.Al ₂ O ₃ ) and other crystal phases are generated, and the strength of the substrate 1 is improved by the generation of these crystal phases.

In the crystalline glass, if the amount of silicon oxide is less than 40% by weight or exceeds 46% by weight, the firing temperature of the crystalline glass becomes high and the wiring layer 2 made of a metal material such as copper. At the same time, it becomes difficult to bake. Therefore, the amount of silicon oxide is specified in the range of 40 to 46% by weight.

Further, if the amount of aluminum oxide is less than 25% by weight or exceeds 30% by weight, the firing temperature of the crystalline glass becomes high and the wiring layer 2 made of a metal material such as copper.
At the same time, it becomes difficult to bake. Therefore, the amount of aluminum oxide is specified in the range of 25-30% by weight.

Furthermore, the amount of magnesium oxide is 8% by weight.
If it is less than 1, the substrate 1 made of crystalline glass by firing
Cordierite (2MgO.2
Al ₂O₃) Is reduced and the strength of the substrate 1 is increased.
Cannot be added, and if it exceeds 13% by weight, crystals
Of high heat resistance of copper and other metallic materials
It is difficult to fire the wiring layer 2 made of the same material at the same time. Servant
Therefore, the amount of magnesium oxide is in the range of 8 to 13% by weight.
Specified.

Furthermore, when the amount of zinc oxide is less than 6% by weight, when the substrate 1 made of crystalline glass is manufactured by firing, the amount of garnite (ZnO.Al ₂ O ₃ ) produced becomes small and the amount of zinc oxide The strength cannot be greatly improved, and if it exceeds 9% by weight, the firing temperature of the crystalline glass becomes high, and it becomes difficult to fire it simultaneously with the wiring layer 2 made of a metal material such as copper. Therefore. The amount of zinc oxide is specified in the range of 6-9% by weight.

Furthermore, when the amount of boron oxide is less than 8% by weight, when manufacturing the substrate 1 made of crystalline glass by firing, garnite (ZnO.Al ₂ O ₃ ) and cordierite (2MgO.2Al ₂ O ₃ ) are used. , Spinel type crystal phase (M
Crystal phases such as gO.Al ₂ O ₃ and ZnO.Al ₂ O ₃ ) are excessively generated, the substrate 1 becomes porous, and the reliability of the airtightness of the container 4 is greatly reduced. If it exceeds 5% by weight, the chemical resistance is lowered and the reliability as a crystal device is lowered. Therefore, the amount of boron oxide is 8 to 1
It is specified in the range of 1% by weight.

The crystalline glass further has 10 to 100 parts by weight of an inorganic filler, specifically, powder of alumina, silica, silicon nitride, aluminum nitride or the like added externally, to improve its mechanical strength. It is greatly improved, and it is effectively prevented that damage or the like is caused by the application of external force.
Therefore, in order to improve the mechanical strength of the substrate 1 and prevent damage or the like from being applied by an external force, the crystalline glass is added with an inorganic filler in an amount of 10 to 100 parts by weight to form the substrate 1. It is preferable.

The inorganic filler also has a particle size of 0.
When the thickness is in the range of 5 μm to 5 μm, the mechanical strength of the substrate 1 can be improved uniformly by being dispersed and contained in the glass ceramic sintered body. Therefore, it is preferable that the particle size of the inorganic filler is in the range of 0.5 μm to 5 μm.

The wiring layer 2 formed on the substrate 1
Has a function of electrically connecting the crystal unit 5 housed in the recess 1a and the wiring conductor of the external electric circuit board, and has a specific electric resistance of 2.5 μΩ · cm such as gold, silver, or copper. If it is formed of the following metal material and is made of copper, a metal paste obtained by adding and mixing an appropriate organic solvent, an organic binder and the like to copper powder is screened on the surface of the green sheet to be the substrate 1. It is formed by printing and applying a predetermined pattern by a printing method or the like.

If the exposed surface of the wiring layer 2 is covered with a plating layer (not shown) made of a metal having good corrosion resistance such as nickel and gold and good wettability with the brazing material, the wiring layer 2 is formed. It is possible to satisfactorily prevent the oxidative corrosion of the wiring layer 2 and the wettability of the brazing material such as solder with respect to the wiring layer 2, and to further connect the wiring layer 2 to the wiring conductor of the external electric circuit board. It can be made easy and reliable. Therefore, the wiring layer 2 has a plating layer of nickel, gold or the like on its exposed surface, for example, a nickel or nickel alloy plating layer having a thickness of 1 μm to 10 μm and a gold plating layer having a thickness of 0.1 to 3 μm, which are sequentially deposited. It is preferable to coat with.

When the surface of the wiring layer 2 is coated with a plating layer of nickel, gold or the like, the arithmetic mean roughness (Ra) of the outermost surface thereof is 1.5 μm or less and the root mean square roughness (Rm).
When s) is set to 1.8 μm or less, the reflectance of the light on the outermost surface becomes 40% or more, and when fixing the crystal unit 5 to the wiring layer 2 via the fixing material 8, the positioning and other operations are easy. Becomes Therefore, when the surface of the wiring layer 2 is coated with a plating layer of nickel, gold or the like, the arithmetic mean roughness (Ra) of the outermost surface thereof is 1.5 μm or less, and the root mean square roughness (Rm).
It is preferable that s) is 1.8 μm or less.

Further, the arithmetic mean roughness (R) of the outermost surface of the plating layer made of nickel, gold or the like covering the surface of the wiring layer 2 is
a) is 1.5 μm or less, root mean square roughness (Rms)
In order to reduce the thickness to 1.8 μm or less, the wiring layer 2 is immersed in an electrolytic nickel plating solution in which a brightening agent such as a sulfur compound is added to a conventionally well-known Watt bath to deposit a nickel plating layer on the surface of the wiring layer 2. After that, it is performed by immersing it in a cyan electrolytic gold plating solution and depositing the gold plating layer on the surface of the nickel plating layer.

Further, a supporting body 7 is attached to the inner surface of the recess 1a of the base body 1, a part of the wiring layer 2 is led out to the upper surface of the supporting body 7, and a leading portion of the wiring layer 2 is led out. The crystal unit 5 is fixed to the upper surface of the support 7 on which is formed via a fixing member 8 such as a conductive adhesive.

The support 7 is made of an epoxy resin or the like having rubber particles added thereto and has an elastic modulus of 2.8 GPa or less. Since the support 7 has an elastic modulus of 2.8 GPa or less, it is easily deformed. Even if heat repeatedly acts on the substrate 1 and the crystal unit 5 due to changes in the external environment, and thermal stress due to the difference in thermal expansion coefficient between the substrate 1 and the crystal unit 5 is repeatedly generated, The thermal stress is absorbed by appropriately deforming the support body 7, and the base body 1 and the crystal unit 5,
No mechanical breakage is caused in the support body 7, the fixing material 8 and the like, and as a result, the crystal unit 5 can be securely and firmly supported and fixed to the base body 1 for a long period of time, and the crystal device 6 can be fixed. High long-term reliability can be achieved.

The elastic modulus of the support 7 is 2.8.
When it exceeds GPa, when heat is repeatedly applied to both the base 1 and the crystal unit 5 due to a change in the external environment, thermal stress caused by the difference in thermal expansion coefficient between the base 1 and the crystal unit 5 is supported. The support 7 is repeatedly acted on the body 7 to cause mechanical breakage, the fixation of the crystal unit 5 is broken, and the reliability of the crystal device 6 is greatly reduced. Therefore, the support 7
Is specified to have an elastic modulus of 2.8 GPa or less.

As the support 7 having an elastic modulus of 2.8 GPa or less, 15 to 60% by weight of conductive powder such as silver powder is added to an epoxy resin containing rubber particles such as acrylic rubber and isoprene rubber. What was added in the ratio of is used suitably.

As the epoxy resin, epoxy resins such as (ortho) cresol novolac type, phenol novolac type, naphthalene aralkyl type, polysulfide modified type, etc., especially semisolid when uncured (viscosity 3000P (poise) or more, Those at room temperature) are preferably used. In this case, by increasing the amount of rubber particles added to the epoxy resin, the elastic modulus of the support 7 can be lowered, and the state of the epoxy resin (structure, degree of crosslinking, degree of polymerization, type of curing agent, etc.) can be changed. The elastic modulus of the support 7 can be set to 2.8 GPa or less by appropriately controlling the amount of rubber particles added. Further, if the amount of rubber particles added to the epoxy resin exceeds 50% by weight, the shape retention of the support 7 is significantly reduced, and the crystal unit 5 is firmly fixed on the support 7 via the fixing material 8. Adhesive fixation tends to be difficult. Therefore, when the rubber particles are added to the epoxy resin, the addition amount of the rubber particles is set so that the elastic modulus of the support 7 is 2.8 GPa.
It is preferable to set it to 50% by weight or less within the following range.

When the elastic modulus of the support 7 is less than 1 GPa, the support 7 tends to be deformed too much, and it tends to be difficult to support and fix the crystal unit 5 on the base 1. Therefore, the support 7 has an elastic modulus of 2.8 GP.
It is preferably set to 1 GPa or more in the range of a or less.

The support 7 having an elastic modulus of 2.8 GPa or less is not limited to the epoxy resin composition described above, but a thermosetting resin having a low elastic modulus such as silicone resin may be added with a filler component such as silica. It may be formed by adding a conductive powder to the resin composition.

Substrate 1 on which the crystal unit 5 is mounted
Has a lid 3 attached to its upper surface, whereby the base 1
A crystal unit 5 is hermetically housed in a container 4 including a lid 3 and a lid 3 to form a crystal device 6.

The lid 3 is formed of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or a ceramic material such as an aluminum oxide sintered body. For example, an iron-nickel-cobalt alloy ingot. It is formed by subjecting the (lump) to well-known metal processing such as rolling and punching.

Further, the lid 3 can be attached to the base body 1 by a method using a joining material such as a brazing material, glass or an organic resin adhesive, or a welding method such as seam welding. When the lid 3 is attached by seam welding, a frame-shaped brazing metallization layer 9 is usually formed around the recess 1 a of the base 1.
And the metal frame 10 is brazed to the brazing metallization layer 9 via a brazing material such as silver brazing, and then the metal frame 1 is deposited.
It is carried out by placing the metallic lid 3 on 0 and seam welding the outer edge of the lid 3. in this case,
The metal frame 10 has a radius of curvature of 5 to 30 μm formed at the corner between the upper surface and the side surface of the metal frame 10.
No burrs are formed on the upper surface side of the metal frame body 10, and when the lid body 3 is seam welded to the upper surface of the metal frame body 10, the both can be bonded reliably and airtightly and firmly. Therefore, it is preferable that the corner portion between the upper surface and the side surface of the metal frame 10 is rounded with a radius of curvature of 5 to 30 μm.

Furthermore, when the metal frame 10 is rounded with a radius of curvature of 40 to 80 μm at the corner between the lower surface and the side surface, the metal frame 10 is brazed to the metallizing layer. 9 is joined with a brazing material via a brazing material, a space is formed between the brazing metallization layer 9 and a corner portion on the lower surface side of the metal frame body 10, and a large pool of the brazing material is formed in the space to form a metal. Bonding of the frame body 10 to the brazing metallization layer 9 is strengthened. Therefore, in order to firmly bond the metal frame 10 to the brazing metallization layer 9 via the brazing material, a roundness with a radius of curvature of 40 to 80 μm is formed at the corner between the lower surface and the side surface of the metal frame 10. It is preferably formed.

Thus, according to the above crystal device 6,
By connecting the wiring layer 2 to an external electric circuit and applying a predetermined voltage to the electrodes of the crystal resonator 5, the crystal resonator 5 vibrates at a predetermined frequency, and an information processing device such as a computer or a mobile phone is used. Used as a time and frequency reference source in electronic devices.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, as shown in FIG.
You may make it provide the protrusion 11 on the support body 7 and make the fixing material 8 adhere more firmly.

Further, in the above-described crystal device 6, the base 1 is provided with the concave portion 1a, and the crystal resonator 5 is accommodated in the concave portion 1a. As shown in FIG.
The present invention can also be applied to a crystal device 6 in which a crystal resonator 5 is mounted and fixed thereon, and the fixed crystal resonator 5 is hermetically sealed with a bowl-shaped lid 3.

[0048]

According to the crystal device of the present invention, the substrate contains 40 to 46% by weight of silicon oxide and 25 to 30% by weight.
Of aluminum oxide, 8 to 13% by weight of magnesium oxide, 6 to 9% by weight of zinc oxide, and 8 to 11% by weight of boron oxide, and the relative dielectric constant of the crystalline glass. Since the rate is as low as about 5 (room temperature 1 MHz), the crystal oscillator of the crystal oscillator that propagates through the wiring layer provided on the base has a high propagation speed, and the reference signal has a high frequency. It can be accommodated and the frequency of the reference signal can be very high.

At the same time, since the above-mentioned crystalline glass has a low firing temperature of 850 to 1100 ° C., the substrate and the wiring layer formed by the simultaneous firing have a specific electric resistance of 2.5 μΩ · cm.
It can be made of copper, silver, or gold that is as low as or less than that, and as a result, when the reference signal of the crystal unit is propagated to the wiring layer,
The reference signal can be accurately and surely propagated to the external electric circuit without causing a large attenuation in the reference signal.

Further, according to the crystal device of the present invention, a support having a modulus of elasticity of 2.8 GPa or less, which is made of, for example, an epoxy resin containing rubber particles, is attached to the mounting portion of the base, and the support is attached. Since the crystal unit is bonded and fixed with a fixing material, heat repeatedly acts on the base and the crystal unit as the external environment changes, and the difference in the thermal expansion coefficient between the base and the crystal unit Even if the resulting thermal stress is repeatedly generated, the thermal stress is absorbed by deforming the support body appropriately, and the fixation of the crystal unit to the base is not broken. It is possible to securely and firmly fix the quartz device over a period of time, and it is possible to enhance the long-term reliability of the crystal device.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a crystal device of the present invention.

FIG. 2 is a cross-sectional view of an essential part showing another embodiment of the crystal device of the present invention.

FIG. 3 is a cross-sectional view showing another embodiment of the crystal device of the present invention.

[Explanation of symbols]

1 ... Base 1a ... Recess 2 ... Wiring layer 3 ... Lid 4 ... Container 5 ... Crystal oscillator 6 ... Crystal device 7 ... Support 8 ... Fixing material 9 ... Metallizing layer for brazing 10 ... Metal frame 11 ... Protrusions

Claims (2)

[Claims] 1. A base body having a mounting portion on which a crystal unit is mounted, and a wiring layer extending from the mounting portion to an outer surface, and a mounting portion of the base body, and electrodes being mounted on the wiring layer. What is claimed is: 1. A crystal device comprising a crystal resonator electrically connected to the base body, and a lid attached to the base body for hermetically housing the crystal resonator, wherein the base body is 40 to 46% by weight of silicon oxide. And a crystalline glass comprising 25 to 30 wt% aluminum oxide, 8 to 13 wt% magnesium oxide, 6 to 9 wt% zinc oxide, and 8 to 11 wt% boron oxide. Is 2.5 μΩ · cm
A crystal device which is formed of a metal material having the following specific electric resistance, and the crystal resonator is mounted on a mounting portion of a base through a support having an elastic modulus of 2.8 GPa or less. . 2. The crystal device according to claim 1, wherein the support is made of an epoxy resin added with rubber particles.