JP2003101367A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent great attenuation of a reference signal in a wiring layer emitted from a crystal vibrator. SOLUTION: The crystal device includes a substrate 1 having a mount part 1a for a crystal vibrator 5 to be mounted thereon and a wiring layer 2, the crystal vibrator 5 fixed to the mount part 1a of the substrate 1 via a fixing member 7, and a lid member 3 for airtightly accommodating the vibrator 5. The substrate 1 is a sintered compact obtained by sintering a form containing 20-80 volume % of lithium silicate glass having 5-30 wt.% of Li2 O and having a yield point of 400-800 deg.C and 20-80 vol.% of filler component of at least one of types of quartz, cristobalite, tridymite, enstatite and forsterite, and containing crystalline phase of at least one of types of quartz, cristobalite, tridymite and enstatite. The wiring layer 2 is made of a metallic material having a specific electric resistance of 2.5 μΩ.cm. The fixing member 7 has an elastic modulus of 3.6 GPa or less.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal device used as a reference source of time and frequency in an information processing device such as a computer and an electronic device such as a mobile phone.

[0002]

2. Description of the Related Art A crystal device used as a time and frequency reference source in an information processing device such as a computer or an electronic device such as a mobile phone generally has a square plate-shaped crystal substrate on which electrodes for voltage application are formed. A crystal unit
It is formed by hermetically housing in a crystal unit housing package.

The crystal unit housing package is generally made of an electrically insulating material such as an aluminum oxide sintered body, and has a recess for forming a space for accommodating the crystal unit in the center of the upper surface and a recess surface. Substrate having a wiring layer made of a metal material such as a refractory metal such as tungsten or molybdenum, which is derived from the outer surface to the outer surface, and a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or an aluminum oxide sintered material. And a lid made of a ceramic material such as a body.

Then, the electrodes of the crystal unit are attached to the wiring layer exposed on the inner surface of the recess of the base body and the peripheral surface of the base body through a fixing material, whereby the crystal unit is adhered and fixed in the recess. It is electrically connected to the wiring layer together, and then the lid is attached to the upper surface of the base by a bonding means such as bonding with an adhesive or seam welding, and the crystal oscillator is placed inside the container composed of the base and the lid. The crystal device as a product is completed by hermetically containing it.

As a fixing material for mounting the crystal unit, a conductive adhesive material is generally used which is a mixture of an organic resin such as epoxy resin and a conductive powder such as silver powder as a main material. It is used.

When the lid is attached to the substrate by seam welding, a frame-shaped brazing metallization layer is usually formed in advance around the recess of the substrate, and the metal frame is brazed to the metallized layer. Then, a method of seam welding the lid to the metal frame is used.

Further, the crystal device is mounted on an external electric circuit board by connecting the wiring layer led out to the outer surface of the substrate to the wiring conductor of the external electric circuit board through a conductive connecting material such as solder. The crystal oscillator is electrically connected to the external electric circuit via the wiring layer and vibrates at a predetermined frequency according to the voltage applied from the external electric circuit to supply the reference signal to the external electric circuit.

[0008]

However, in the conventional crystal device, the base body is formed of an aluminum oxide sintered body, and the relative permittivity of the aluminum oxide sintered body is 9 to 10 (room temperature, 1 MHz). Therefore, the propagation speed of the reference signal of the crystal unit transmitted through the wiring layer provided on the substrate is slow, so that the crystal unit that sets the reference signal to a high frequency and requires high-speed signal transmission cannot be accommodated. Had a drawback that it was specified to be low.

In this conventional crystal device, the wiring layer formed on the substrate is made of a refractory metal material such as tungsten, molybdenum or manganese, and the specific electrical resistance of the tungsten or the like is 5.4 μΩ.
Since it is as high as cm (20 ° C.) or more, when the reference signal is propagated to the wiring layer, the reference signal is greatly attenuated, and the reference signal cannot be accurately and surely propagated to the external electric circuit. Was.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a crystal device capable of supplying a reference signal of a crystal resonator to an external electric circuit at high speed, accurately and surely. is there.

[0011]

According to the present invention, there is provided a mounting portion on which a crystal oscillator is mounted, a base having a wiring layer led out from the mounting portion to an outer surface, and fixed to the mounting portion of the base. A crystal device comprising a crystal unit, which is fixed through a material and whose electrodes are electrically connected to the wiring layer, and a lid, which is attached to the base body and hermetically houses the crystal unit. The substrate contains 20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O and having a yield point of 400 to 800 ° C., quartz, cristobalite,
20-80% by volume of a filler component consisting of at least one of tridymite, enstatite and forsterite
A sintered body containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite, which is obtained by firing a formed body containing at a ratio of
It is made of a metal material having a specific electric resistance of μΩ · cm (20 ° C.) or less, and the elastic modulus of the fixing material is 3.6 G.
It is characterized by being Pa or less.

Further, the present invention is characterized in that the fixing material is made of an epoxy resin to which rubber particles are added.

According to the crystal device of the present invention,
The yield point containing 5 to 30% by weight of Li ₂ O is 400 to 8
Obtained by firing a formed body containing 20 to 80% by volume of lithium silicate glass at 00 ° C. and 20 to 80% by volume of a filler component consisting of at least one of quartz, cristobalite, tridymite, enstatite and forsterite. It is formed of a sintered body containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite, and the relative permittivity of the sintered body is as low as about 5 (room temperature 1 MHz). It is possible to accommodate a crystal resonator that requires high-speed signal propagation by setting the propagation speed of the reference signal of the crystal resonator that propagates through the wiring layer to be high, and the frequency of the reference signal to be very high. You can do it.

At the same time, the sintered body has a firing temperature of 850.
Since it is as low as ~ 1100 ° C, the wiring layer formed by co-firing with the substrate has a specific electric resistance of 2.5 μΩ · cm (20
It can be made of copper, silver, or gold that is as low as ℃) or less, and as a result, when the reference signal of the crystal unit is propagated to the wiring layer, the reference signal is not greatly attenuated and the reference signal is It is possible to accurately and surely propagate the electric circuit.

Further, according to the crystal device of the present invention, as the fixing material for fixing the crystal unit to the substrate, for example, an elastic modulus made of epoxy resin or the like with rubber particles added is 3.6 G.
Since a material having a pressure of Pa or less is used, heat repeatedly acts on the base body and the crystal unit with a change in the external environment, and thermal stress is repeatedly generated between the base body and the crystal unit due to the difference in thermal expansion coefficient between the base unit and the crystal unit. Even if it does, the thermal stress is absorbed by appropriately deforming the fixing material, and the fixing material is not mechanically broken.As a result, the crystal unit is securely and firmly attached to the substrate for a long period of time. Since it becomes possible to fix the crystal device, the long-term reliability of the crystal device can be improved.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a crystal device of the present invention will be described in detail with reference to the accompanying drawings. 1 is a sectional view showing an embodiment of the crystal device of the present invention. In FIG. 1, 1 is a base, 2 is a wiring layer, and 3 is a lid. A crystal device 6 is formed by hermetically accommodating a crystal resonator 5 in a container 4 formed by the base 1 and the lid 3.

The substrate 1 contains 5 to 30% by weight of Li ₂ O.
Contains 20 to 80% by volume of lithium silicate glass having a yield point of 400 to 800 ° C. and 20 to 80% by volume of a filler component composed of at least one of quartz, cristobalite, tridymite, enstatite and forsterite. Quartz obtained by firing the formed body,
It is formed of a glassy sintered body containing at least one crystal phase of cristobalite, tridymite, and enstatite, and has a recess 1a which is a cavity for accommodating the crystal resonator 5 on the upper surface thereof. The crystal unit 5 is housed in the recess 1a.

The wiring layer 2 is led out from the surface of the concave portion 1a to the outer surface of the base body 1, and the electrode of the crystal resonator 5 is made of a conductive adhesive or the like at the portion of the wiring layer 2 exposed on the surface of the concave portion 1a. The portion that is adhesively fixed via the fixing material 7 and is led to the outer surface is connected to the wiring conductor of the external electric circuit board through a brazing material such as solder.

The base body 1 made of the above-mentioned sintered body is made by adding a binder containing acrylic resin as a main component and a dispersant, a plasticizer and an organic solvent to a filler component such as lithium silicate glass and quartz, cristobalite, etc. A green sheet (raw sheet) is made by using the doctor blade method or calender roll method while making the sludge, and thereafter, the green sheet is appropriately punched and a plurality of these are laminated to obtain a green sheet (about 85).
It is manufactured by firing at a temperature of 0 to 1100 ° C.

The substrate 1 contains 20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O and having a yield point of 400 to 800 ° C., quartz, cristobalite,
20-80% by volume of a filler component consisting of at least one of tridymite, enstatite and forsterite
Substrate 1 when formed from a sintered body containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite obtained by firing a formed body containing
Has a low relative dielectric constant of about 5 (room temperature 1 MHz), and as a result, the crystal unit 5 transmitted through the wiring layer 2 provided on the substrate 1
It is possible to accommodate the crystal oscillator 5 that requires a high-speed propagation of the reference signal by setting the propagation speed of the reference signal to a high frequency, and the frequency of the reference signal can be made extremely high.

The sintering temperature of the above-mentioned sintered body is about 85.
Since the temperature is as low as 0 to 1100 ° C., the wiring layer 2 formed by co-firing with the substrate 1 has a specific electric resistance of 2.5 μΩ · cm.
It can be formed of copper, silver, or gold as low as (20 ° C.) or lower, and as a result, when the reference signal of the crystal unit 5 is propagated to the wiring layer 2, the reference signal is not greatly attenuated. It is possible to accurately and reliably propagate the reference signal to the external electric circuit.

In the sintered body forming the substrate 1, the proportion of lithium silicate glass is 20 to 80% by volume, and the filler component is 20 to 80% by volume because the amount of lithium silicate glass is 20% by volume. If it is less, in other words, if the filler component is more than 80% by volume, liquid phase sintering cannot be performed and it is necessary to fire at a high temperature. In that case, the wiring layer 2 is made of a metal such as copper, silver, or gold having a low melting point. Even if an attempt is made to form the material, such a metal material has a low melting point and thus melts during firing, making it impossible to form the wiring layer 2 by co-firing with the substrate 1, and the amount of lithium silicate glass is 80.
If the content of the filler is more than 20% by volume, that is, if the content of the filler is less than 20% by volume, the properties of the sintered body greatly depend on the properties of the lithium silicate glass, making it difficult to control the material properties and lowering the sintering start temperature. This is because it becomes difficult to perform simultaneous firing with the wiring layer 2.

The sintered body used for the substrate 1 is Li
It is important to use a lithium silicate glass containing ₂ O in an amount of 5 to 30% by weight, preferably 5 to 20% by weight, and it is possible to precipitate lithium silicic acid by using such a lithium silicate glass. it can. In addition, Li ₂
If the O content is less than 5% by weight, the generation of lithium silicic acid crystals during sintering is reduced, and high strength cannot be achieved. If the O content is more than 30% by weight, the dielectric loss tangent is 100 × 10 ^−14.
Therefore, the characteristics of the substrate 1 deteriorate.

Further, it is desirable that the sintered body contains substantially no Pb. This is because Pb is toxic, and if Pb is contained, a special apparatus and management are required to prevent poisoning during the manufacturing process, and thus a sintered body cannot be manufactured at low cost. . Considering the case where Pb is unavoidably mixed as an impurity, Pb
The amount is preferably 0.05% by weight or less.

Further, the yield point of the sintered body is 400 to 800.
C., especially 400 to 650.degree. C., an organic binder added when molding a mixture of lithium silicate glass and a filler component, efficient removal of the solvent during baking, and a wiring layer baked at the same time as the substrate 1. It is important to match the firing conditions with those of No. 2. When the deformation point is lower than 400 ° C., the lithium silicate glass starts to be sintered at a low temperature. Therefore, for example, with the wiring layer 2 made of a metal material having a sintering start temperature of 600 to 800 ° C. such as silver or copper. Since co-firing is not possible and the compaction of the compact starts at a low temperature, the organic binder and solvent cannot decompose and volatilize and remain in the sintered compact, which adversely affects the properties of the sintered compact. This is because. On the other hand, when the yield point is higher than 800 ° C, it becomes difficult to sinter unless the lithium silicate glass is increased, and the cost of the sintered body is increased because a large amount of expensive lithium silicate glass is required. This is because

Examples of the lithium silicate glass satisfying the above characteristics include, for example, SiO ₂ —Li ₂ O—Al ₂ O ₃ , SiO ₂ —Li ₂ O—Al ₂ O ₃ —MgO—TiO ₂ , and SiO ₂ —Li _{2. O-Al 2 O 3 -MgO-} Na 2 O-F SiO 2 -Li 2 O-Al 2 O 3 -K 2 O-Na 2 O-Zn
_{O, SiO 2 -Li 2 O-} Al 2 O 3 -K 2 O-P 2 O 5, SiO 2 -Li 2 O-Al 2 O 3 -K 2 O-P 2 O 5 -ZnO
_{-Na 2 O, SiO 2 -Li 2} O-MgO, SiO 2 -Li 2 O-ZnO, composition etc., and these, SiO ₂ is an essential component for forming a lithium silicate , SiO ₂ and Li ₂ O are present in a proportion of 60 to 85% by weight in the total amount of glass.
It is desirable for the total amount of glass to be 65 to 95% by weight in order to precipitate lithium silicate crystals.

On the other hand, as the filler component, quartz,
20 to 80% by volume of at least one of cristobalite, tridymite, enstatite and forsterite,
In particular, it is desirable to mix it in a proportion of 30 to 70% by volume. The combination of such filler components can promote the sintering of the sintered body. Above all, if the quartz-forsterite ratio is 0.427 or more, the relative dielectric constant of the forsterite is high during the sintering. Can be changed to low enstatite.

The amounts of the above lithium silicate glass and the filler component are preferably adjusted appropriately according to the yield point of the lithium silicate glass. That is, when the yield point of the lithium silicate glass is as low as 400 ° C. to 600 ° C., the sinterability at low temperature is increased, so the content of the filler component is 50
A relatively large amount of 80% by volume can be added. On the other hand, when the deformation point of the lithium silicate glass is as high as 650 ° C to 850 ° C, the sinterability is lowered and the content of the filler component is 2
It is desirable to add a relatively small amount of 0 to 50% by volume. It is desirable to control the sag point of this lithium silicate glass according to the firing conditions of the wiring layer 2.

Further, the lithium silicate glass has a shrinkage initiation temperature of 700 ° C. or lower at 850 ° C. without addition of a filler component.
In the above case, the wiring layer 2 is melted, and the wiring layer 2 cannot be adhered to the substrate 1 by simultaneous firing. However, if the filler component is mixed in a proportion of 20 to 80% by volume, the firing temperature can be increased and a liquid phase for crystal precipitation and liquid phase sintering of the filler component can be formed. By adjusting the content of the filler component, the simultaneous firing conditions of the base 1 and the wiring layer 2 can be matched. further,
The content of expensive lithium silicate glass can be reduced to reduce the raw material cost.

For example, when the wiring layer 2 is made of a metal material containing copper as a main component, the wiring layer 2 is baked at 600.
Since it is carried out at ˜1100 ° C., the yield point of lithium silicate glass is 400 ° C. to 650 ° C. for simultaneous firing.
Therefore, the content of the filler component is preferably 50 to 80% by volume. Further, the cost of the sintered body can be reduced by reducing the compounding amount of the expensive lithium silicate glass.

The mixture of the lithium silicate glass and the filler component is added to an appropriate molding organic binder, a solvent, etc., and then formed into a sheet by a desired molding means such as a doctor blade method, a rolling method or a die pressing method. After being formed into an arbitrary shape such as a shape, it is fired.

In firing, first, the organic solvent and solvent components added for molding are removed. The removal of the organic binder and the solvent component is usually carried out in the atmosphere of about 700 ° C. When copper is used for the wiring layer 2,
It is carried out in a nitrogen atmosphere containing water vapor at 100 to 700 ° C. At this time, the shrinkage start temperature of the molded body is 700 to
It is desirable that the temperature is about 850 ° C., and if the shrinkage initiation temperature is lower than this, it becomes difficult to remove the organic binder and the solvent component. Therefore, the characteristics of the lithium silicate glass in the molded body, especially the sag point are controlled as described above. Will be required.

The firing is carried out in an oxidizing atmosphere at 850 to 1100 ° C., or in a non-oxidizing atmosphere in the case of simultaneous firing with the wiring layer 2, whereby the relative density is densified to 90% or more. If the firing temperature at this time is lower than 850 ° C., densification cannot be achieved. On the other hand, if the firing temperature is higher than 1100 ° C., the wiring layer is melted by simultaneous firing with the wiring layer 2. When copper is used for the wiring layer 2, 850
It is performed in a non-oxidizing atmosphere at ˜1100 ° C.

The wiring layer 2 formed on the substrate 1
Has a function of electrically connecting the crystal unit 5 housed in the recess 1a and the wiring conductor of the external electric circuit board, and has a specific electric resistance of 2.5 μΩ · cm such as gold, silver, or copper.
If it is formed of a metal material of (20 ° C.) or less and is made of copper, a metal sheet obtained by adding and mixing an appropriate organic solvent, an organic binder, etc. to copper powder is used as a green sheet for the base 1. It is formed by printing and applying a predetermined pattern on the surface of the film by screen printing or the like.

If the exposed surface of the wiring layer 2 is covered with a plating layer (not shown) made of a metal having good corrosion resistance such as nickel and gold and wettability with the brazing material, the wiring layer 2 will be covered. Oxidation and corrosion can be satisfactorily prevented, the soldering property of the brazing material such as solder to the wiring layer 2 can be improved, and the connection of the wiring layer 2 to the wiring conductor of the external electric circuit board can be further facilitated. And it can be assured. Therefore, the wiring layer 2 has a plating layer of nickel, gold or the like on its exposed surface, for example, a nickel or nickel alloy plating layer having a thickness of 1 μm to 10 μm and a gold plating layer having a thickness of 0.1 to 3 μm, which are sequentially deposited. It is preferable to coat with.

When the surface of the wiring layer 2 is coated with a plating layer of nickel, gold or the like, the arithmetic mean roughness (Ra) of the outermost surface thereof is 1.5 μm or less and the root mean square roughness (Rm).
When s) is set to 1.8 μm or less, the reflectance of the light on the outermost surface becomes 40% or more, and when fixing the crystal unit 5 to the wiring layer 2 via the fixing material 7, the work such as positioning is easy. Becomes Therefore, when the surface of the wiring layer 2 is coated with a plating layer of nickel, gold or the like, the arithmetic mean roughness (Ra) of the outermost surface thereof is 1.5 μm or less, and the root mean square roughness (Rm).
It is preferable that s) is 1.8 μm or less.

Further, the arithmetic mean roughness (R) of the outermost surface of the plating layer made of nickel, gold or the like covering the surface of the wiring layer 2
a) is 1.5 μm or less, root mean square roughness (Rms)
In order to reduce the thickness to 1.8 μm or less, the wiring layer 2 is immersed in an electrolytic nickel plating solution in which a brightening agent such as a sulfur compound is added to a conventionally well-known Watt bath to deposit a nickel plating layer on the surface of the wiring layer 2. After that, it is performed by immersing it in a cyan electrolytic gold plating solution and depositing the gold plating layer on the surface of the nickel plating layer.

In the wiring layer 2, a crystal oscillator 5 is fixed on a part thereof (a region exposed on the inner surface of the concave portion 1a) by a fixing material 7.
The fixing material 7 is made of, for example, an epoxy resin having rubber particles added thereto and having an elastic modulus of 3.6 GPa or less.

The elastic material of the fixing material 7 is 3.6 GPa.
It is the following, and since it is easily deformed, heat repeatedly acts on the substrate 1 and the crystal unit 5 as the external environment changes.
Even if the thermal stress due to the difference in thermal expansion coefficient between the two is repeatedly generated between the crystal oscillator 5 and the crystal unit 5, the thermal stress is absorbed by appropriately deforming the fixing material 7, and the fixing material 7 mechanically moves. As a result, the crystal unit 5 can be securely and firmly fixed to the base body 1 for a long period of time, and the long-term reliability of the crystal device 6 can be enhanced.

The fixing material 7 has an elastic modulus of 3.6 GPa.
When the temperature exceeds 1.0, when heat is repeatedly applied to both the base 1 and the crystal unit 5 due to a change in the external environment, the thermal stress due to the difference in the thermal expansion coefficient between the base 1 and the crystal unit 5 causes the fixing member 7 to move.
Repeatedly, the fixing member 7 is mechanically broken, the fixing of the crystal unit 5 via the fixing member 7 is broken, and the reliability of the crystal device 6 is greatly reduced. Therefore, the fixing material 7 is specified to have an elastic modulus of 3.6 GPa or less, and more preferably 2.8 GPa or less.

Fixing material 7 having an elastic modulus of 3.6 GPa or less
For example, an epoxy resin containing rubber particles such as acrylic rubber or isoprene rubber to which conductive powder such as silver powder is added at a ratio of 15 to 60% by weight is preferably used.

As the epoxy resin, epoxy resins of bisphenol A type, bisphenol F type, rubber modified type, urethane modified type, etc., particularly those which are viscous (room temperature) when uncured are preferably used.

In this case, the elastic modulus of the fixing material 7 can be lowered by increasing the amount of rubber particles added to the epoxy resin, and the state of the epoxy resin (structure, degree of crosslinking,
The elastic modulus of the fixing material 7 can be 3.6 GP by controlling the addition amount of the rubber particles according to the degree of polymerization, the type of curing agent, etc.).
It can be a or less. When the amount of rubber particles added to the epoxy resin exceeds 50% by weight, the fluidity of the uncured resin composition is significantly reduced, and the fixing material 7 is provided between the electrode of the crystal unit 5 and the wiring layer 2. Tends to be difficult to intervene uniformly, and it becomes difficult to firmly fix the crystal unit 5 to the substrate 1. Therefore, when rubber particles are added to the epoxy resin, the amount of addition is preferably 50% by weight or less within a range in which the elastic modulus of the fixing material 7 is 3.6 GPa or less.

The fixing member 7 has an elastic modulus of 0.1 GP.
If it is less than a, the crystal resonator 5 tends to be deformed too easily, and it tends to be difficult to securely bond and fix the crystal resonator 5 to a predetermined position in the recess 1 a of the base 1. Therefore, the fixing material 7 has an elastic modulus of 0. 0 in the range of 3.6 GPa or less.
It is preferably set to 1 GPa or more.

The fixing material 7 having an elastic modulus of 3.6 GPa or less is not limited to the epoxy resin composition described above, but a thermosetting resin having a low elastic modulus such as silicone resin, or silicone resin such as silica. You may form by adding electroconductive powder to the resin composition which added the filler component.

The base body 1 to which the crystal unit 5 is adhered and fixed via the fixing material 7 has the lid body 3 attached to its upper surface, whereby the inside of the container 4 composed of the base body 1 and the lid body 3. The crystal unit 5 is hermetically housed in the crystal unit 5 to form the crystal device 6.

The lid 3 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or a ceramic material such as an aluminum oxide sintered body. For example, an iron-nickel-cobalt alloy ingot. It is formed by subjecting the (lump) to well-known metal processing such as rolling and punching.

Further, the lid 3 can be attached to the base body 1 by a method using a joining material such as a brazing material, glass or an organic resin adhesive, or a welding method such as seam welding. When the lid 3 is attached by seam welding, a frame-shaped brazing metallization layer 8 is usually formed around the recess 1 a of the base 1.
And the metal frame 9 is brazed to the brazing metallization layer 8 through a brazing material such as silver brazing, and then the metal frame 9 is deposited. It is carried out by placing the metallic lid 3 on the plate and seam welding the outer edge of the lid 3. In this case, the metal frame body 9 has a radius of curvature of 5 at the corner between the upper surface and the side surface.
By forming a roundness of ˜30 μm, burrs are not formed on the upper surface side of the metal frame body 9, and when the lid body 3 is seam welded to the upper surface of the metal frame body 9, both are reliably and airtight. In addition, it can be firmly bonded. Therefore, it is preferable that the metal frame 9 has a rounded corner having a radius of curvature of 5 to 30 μm between the upper surface and the side surface.

Furthermore, when the metal frame body 9 is rounded with a radius of curvature of 40 to 80 μm at the corner between the lower surface and the side surface, the metal frame body 9 is brazed with a metallizing layer. 8 is joined with a brazing material through a brazing material, a space is formed between the brazing metallization layer 8 and the corner portion on the lower surface side of the metal frame body 9, and a large pool of the brazing material is formed in the space. Bonding of the frame body 9 to the brazing metallization layer 8 is strengthened. Therefore, in order to firmly join the metal frame 9 to the brazing metallization layer 8 via the brazing material, the radius of curvature is 40 to 80 at the corner between the lower surface and the side surface of the metal frame 9.
It is preferable to form a roundness of μm.

Thus, according to the above-mentioned crystal device 6,
By connecting the wiring layer 2 to an external electric circuit and applying a predetermined voltage to the electrodes of the crystal resonator 5, the crystal resonator 5 vibrates at a predetermined frequency, and an information processing device such as a computer or a mobile phone is used. Used as a time and frequency reference source in electronic devices.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, as shown in FIG.
When the protrusion 10 is formed on a part of the wiring layer 2, the protrusion 10 serves as a spacer to secure a certain space between the wiring layer 2 and the crystal unit 5, and a sufficient fixing material for this space. The crystal resonator 5 can be extremely firmly adhered and fixed to the wiring layer 2 by inserting 7 therein.

In the crystal device 6 described above, the concave portion 1a is provided in the base body 1 and the crystal resonator 5 is accommodated in the concave portion 1a. As shown in FIG.
The present invention can also be applied to a crystal device 6 in which a crystal resonator 5 is mounted and fixed thereon, and the fixed crystal resonator 5 is hermetically sealed with a bowl-shaped lid 3.

[0053]

According to the crystal device of the present invention, the base has a yield point of 400 containing Li ₂ O in an amount of 5 to 30% by weight.
20 ~ 80% by volume of lithium silicate glass at ~ 800 ° C
And at least one of quartz, cristobalite, tridymite and enstatite obtained by firing a formed body containing a filler component consisting of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in a proportion of 20 to 80% by volume. It is formed of a sintered body containing one kind of crystal phase, and since the relative permittivity of such a sintered body is as low as about 5 (room temperature 1 MHz), the reference signal of the crystal oscillator transmitted through the wiring layer provided on the base is It is possible to accommodate a quartz oscillator that requires a high-speed propagation of a reference signal with a high propagation speed and a high-frequency reference signal, so that the frequency of the reference signal can be extremely high.

At the same time, the sintering temperature of the sintered body is 850.
Since it is as low as ~ 1100 ° C, the wiring layer formed by co-firing with the substrate has a specific electric resistance of 2.5 μΩ · cm (20
It can be made of copper, silver, or gold that is as low as ℃) or less, and as a result, when the reference signal of the crystal unit is propagated to the wiring layer, the reference signal is not greatly attenuated and the reference signal is It is possible to accurately and surely propagate the electric circuit.

Further, according to the crystal device of the present invention, as a fixing material for fixing the crystal unit to the base body, for example, an elastic modulus made of epoxy resin or the like containing rubber particles is 3.6 G.
Since a material having a pressure of Pa or less is used, heat repeatedly acts on the base body and the crystal unit with a change in the external environment, and thermal stress is repeatedly generated between the base body and the crystal unit due to the difference in thermal expansion coefficient between the base unit and the crystal unit. Even if it does, the thermal stress is absorbed by appropriately deforming the fixing material, and the fixing material is not mechanically broken.As a result, the crystal unit is securely and firmly attached to the substrate for a long period of time. Since it becomes possible to fix the crystal device, the long-term reliability of the crystal device can be improved.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a crystal device of the present invention.

FIG. 2 is a cross-sectional view of an essential part showing another embodiment of the crystal device of the present invention.

FIG. 3 is a cross-sectional view showing another embodiment of the crystal device of the present invention.

[Explanation of symbols]

1 ... Base 1a ... Recess 2 ... Wiring layer 3 ... Lid 4 ... Container 5 ... Crystal oscillator 6 ... Crystal device 7 ... Fixing material 8 ... Brazing metallization layer 9: Metal frame 10 ... Protrusion

Claims (2)

[Claims] 1. A base body having a mounting portion on which a crystal oscillator is mounted, and a wiring layer extending from the mounting portion to an outer surface, and an electrode fixed to the mounting portion of the base body with a fixing material. Is a crystal unit electrically connected to the wiring layer and a lid body attached to the base body and hermetically housing the crystal unit, wherein the base body is Li ₂ O. 20 to 80% by volume of lithium silicate glass having a yield point of 400 to 800 ° C. containing 5 to 30% by weight of quartz, quartz, cristobalite, tridymite,
Quartz and cristobalite obtained by firing a formed body containing a filler component consisting of at least one of enstatite and forsterite in a proportion of 20 to 80% by volume,
A sintered body containing at least one crystal phase of tridymite and enstatite, the wiring layer is formed of a metal material having a specific electric resistance of 2.5 μΩ · cm or less, and the elastic modulus of the fixing material is A crystal device characterized by being 3.6 GPa or less. 2. The crystal device according to claim 1, wherein the fixing material is made of an epoxy resin added with rubber particles.