JP2003115563A - Electric component and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric component and a manufacturing method of the electric component for which an entire package product is compact and manufacturing properties are superior. SOLUTION: Between a semiconductor device 6 and a wiring board 4, resin layers 11 and 11a that an be easily deformed even after cured toward the outsides of bumps 5a and 5b to 5n are charged over the entire circumference of the semiconductor device 6, and a hollow section 12 is formed inside the bump 5a, and 5b to 5n.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric component such as a surface acoustic wave device and an optical semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art SAW devices using surface acoustic wave devices (SAW chips) and CCDs (Charged Couples).
A semiconductor device in which a semiconductor element such as an ed device) element is mounted on a wiring board to form a package requires a package structure in which a package member does not contact the surface of the semiconductor element due to its characteristics.

For example, as shown in FIG. 5, the SAW device 3
In the case of 1, the SAW chip 32 via the bump 33,
A ceramic package substrate 35 forming the cavity 34 is connected to a predetermined position of a wiring take-out mechanism 38 formed of an electrode pattern 36, a through hole electrode 37 and the like. The package board 35 also serves as a wiring board and a part of a package member, and has a box-like shape in which a wiring take-out mechanism 38 is formed in the bottom plate portion, and a box-shaped side plate and an S
A cavity 34 is formed between the AW chip 32 and the non-contact structure. Package board 35 and SAW
A space which is a part of the cavity 34 is formed between the chip 32 and the chip 32. Further, a plastic lid 39 is adhered to the box-shaped opening of the package substrate 35 for sealing.

Further, as shown in FIG. 6, an optical semiconductor device 5
In the case of 1, the electrode pattern 56 and the through-hole electrode 5 are formed on the ceramic package substrate 55 forming the cavity 54 through the bump 53 and the CCD element 52, for example.
It is connected to a predetermined position of the wiring take-out mechanism 58 formed of 7 or the like. Also in this case, the package substrate 55 also serves as a wiring substrate and a part of the package. The package substrate 55 has a box-like shape and the wiring take-out mechanism 58 is formed on the bottom plate, and the box-shaped side plate and the CCD element 52 are provided between the package board 55 and the CCD element 52. A cavity 54a is formed to form a non-contact structure, and a window 59 which is a space portion for introducing light to the light receiving surface 52a of the CCD element 52 is formed on the bottom plate of the package substrate 55. This window 59 is sealed by a glass lid 60. Further, a metallic lid 61 is adhered and sealed to the box-shaped opening of the package substrate.

[0005]

However, in the case of the above-mentioned electric parts such as the SAW device and the optical semiconductor device, the lids are structurally required to form a hollow structure in which a cavity is formed inside the package. It is sealed by. The ceramic box-shaped package substrate that forms the cavity is considerably larger than the semiconductor element to be mounted because the head of the mounting machine holds the semiconductor element mounted in the mounting process and goes in and out of the box-shaped package. It is necessary to use one. Therefore, it is difficult to reduce the size of the entire package commercialized as a semiconductor device as compared with each element to be housed.

Further, since the structure of the package has a complicated shape, the total cost of the package product is high.

The present invention has been made in view of these circumstances, and an object thereof is to provide an electric component having a small size as a whole packaged product and excellent in manufacturability, and a method for manufacturing the electric component.

[0008]

According to the first aspect of the present invention, in an electric component in which a chip component is mounted on a wiring board via a pump and packaged with a sealing resin, the chip component is used. Between the wiring board and the wiring board, a deformable resin layer is formed outside the bump over the entire circumference of the chip component, and a hollow portion is formed inside the bump. Is.

According to the second aspect of the invention,
The resin layer is an electric component, which is filled in a groove formed on the wiring board.

According to the means of the invention of claim 3,
In the electric component, the resin layer is made of silicon rubber.

According to the means of the invention of claim 4,
On the surface of the wiring substrate, the chip component mounts a deformable resin layer on the entire circumference at a position along the outer periphery of the chip component outside the bump formed when the chip component is mounted on the wiring substrate. The coating step of applying a thicker than between the wiring board and the step of mounting the chip component face down at a predetermined position of the wiring substrate via the bump, and the chip component by a sealing resin. A method of manufacturing an electrical component, comprising: a step of forming a package by sealing and a step of cutting the package outside the package to form a semiconductor device.

According to the means of the invention of claim 5,
The coating step is a method of manufacturing an electric component, characterized in that the groove formed in the wiring board is filled with the resin layer.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing the configuration of an optical semiconductor device which is a first embodiment of an electric component of the present invention. The SAW device and the optical semiconductor device have the same basic configuration, but the material and manufacturing method of the chip components mounted inside are different. In the case of an optical semiconductor device, since it is necessary to receive an optical signal from the outside, the portion corresponding to the light receiving portion of the chip component of the wiring board to which the chip component is flip-chip connected is formed to have a light transmitting property. The difference is.

In the semiconductor device 1, bumps 5a, 5b ... 5n are provided at predetermined positions on the electrode pattern 2 of the wiring board 3 on which the wiring take-out mechanism 4 formed of the electrode pattern 2 and the through-hole electrode 3 and the like is formed. A semiconductor element 6 such as a CCD element, which is a chip component, is mounted via the above. In addition,
The bumps 5a, 5b ... 5n are formed on the electrode pads 7a, 7b ... 7n provided on the semiconductor element 6. Also, C
In the case of the CD element 6a, the light receiving portion 9 is formed in the area surrounded by the electrode pads 7. Between the wiring board 8 and the bumps 5a, 5b, ... 5n formed along the edge of the mounted semiconductor element 6 with a resin that can be easily deformed even after curing, such as silicon rubber. The resin layer 11 is formed. Therefore, the bump 5 and the light receiving portion 9 are formed by the square-shaped resin layer 11 formed on the surface of the wiring board 8 at the outer peripheral edge of the semiconductor element 6 and the portions along the outside of the bumps 5a, 5b ... 5n. It is sealed by the resin layer 11. As a result, the surface of the wiring board 8 and the semiconductor element 6 are
A hollow portion 12 is formed inside the square-shaped resin layer 11 between and. The outer periphery of the resin layer 11 is sealed with a sealing resin 13 such as epoxy resin.

The wiring substrate 8 is a substrate formed of a material such as a ceramic substrate, a glass epoxy substrate, and Si in the case of a SAW device, while the wiring substrate 8 in the case of an optical semiconductor device has a thickness of, for example, Is several 400 μm to 700 μ
A wiring board having an electrically insulating translucent material such as a photosensitive glass substrate or a PET substrate as an insulating layer is used. On the surface layer (one surface or both surfaces) of the substrate, for example, an electrode pattern 2 formed of a copper lead (thickness: about 10 μm to several tens of μm, width: about 100 μm to several hundreds of μm) whose surface is gold-plated Is. In addition, Al, A
It is also possible to form a wiring electrode using a material such as g and ITO. A through-hole electrode 3 is formed on the wiring board 1, and bumps 5a, 5b, ... 5n of a CCD element 6a are connected to the through-hole electrode 3 and are electrically guided to the back surface of the wiring board 1. .

In the photosensitive glass, a through hole is formed by irradiating ultraviolet rays through a pattern mask (not shown), Cu is embedded by sputtering or plating, and then an electrode pattern 2 is formed on the surface. It is possible to form a double-sided wiring board.

Further, the wiring substrate 8 has a light transmittance of a light-transmitting region formed as a light-incident portion of the CCD element 5 to the light-receiving portion 9, which is substantially the same as that of optical glass. Next, a method of manufacturing the semiconductor device 1 having the above configuration will be described. Figure 2
(A)-(d) is explanatory drawing which shows the manufacturing process about the manufacturing method of the semiconductor device 1 of this invention.

First, as shown in FIG. 2A, the electrode pattern 2 and the through-hole electrode 3 are formed by the dispenser 15.
And the like, so that the bumps 5a, 5b, ... 5n of the mounted semiconductor element 6 surround the electrode pattern 2 to which the bumps 5a, 5b ... Silicone rubber is applied in a square shape to form the resin layer 11. The height of the resin layer 11 made of silicon rubber is formed thicker than the distance between the semiconductor element 6 mounted on the wiring board 8 and the wiring board 8. The silicone rubber can be easily deformed even after curing.

Next, as shown in FIG. 2B, the bumps 5a, 5b, ... 5 are formed at predetermined positions on the electrode pattern 2 of the wiring board 8.
The semiconductor element 6 in which n is formed is aligned by a bonding device (not shown) and face down bonding is performed. By this bonding, the peripheral portion of the semiconductor element 6 slightly compresses the resin layer 11. Therefore, the force of compressing during bonding becomes small, and the defects of the connection portion due to the face-down bumps 5a, 5b ... 5n are reduced. Further, since the outer periphery of the semiconductor element 6 is in close contact with the resin layer 11, the hollow portion 12 is formed inside.

Then, as shown in FIG. 2 (c), a sealing resin 13 such as an epoxy resin is wrapped around the semiconductor element 6,
A package layer is formed by means of potting, transfer molding, or the like (not shown). in this case,
Since the resin layer 11 seals the space between the wiring board 8 and the semiconductor element 6 inside the resin layer 11, the sealing resin 1
3 never enters.

After that, as shown in FIG. 2D, a semiconductor device 1 which is cut and packaged at a predetermined position is formed on the sealing resin 13 by a dicing device (not shown).

Next, a second embodiment of the semiconductor device 1 of the present invention will be described. The second embodiment is different from the above-described first embodiment in the shape of the resin layer 11 and the shape of the wiring board 8 at a position corresponding to the resin layer 11, and the other portions are the same. As shown in FIG. 3 and FIG.
In (a) to (e), the same parts as those in the first embodiment are designated by the same reference numerals, and the individual description thereof will be omitted.

FIG. 3 is a sectional view showing the structures of a SAW device and an optical semiconductor device according to a second embodiment of the semiconductor device 1 of the present invention. SAW as in the first embodiment
Although the device and the optical semiconductor device have the same basic configuration, the elements themselves mounted inside are different, and in the case of the optical semiconductor device, it is necessary to receive an optical signal from the outside. The difference is that the position corresponding to the light receiving portion 9 of the CCD element 6a is formed to be transparent.

In this case, the basic structure itself of the semiconductor device 1a is the same as that of the first embodiment described above, but the lower part of the resin layer 11a is inserted into the square-shaped groove 17 formed in the wiring board 8a. Is formed by. In addition, the resin layer 11
The height of the top of a is formed to be thicker than the distance between the semiconductor element 6 mounted on the wiring board 8a and the wiring board 8.

Next, a method of manufacturing the semiconductor device 1 having these configurations will be described. 4A to 4D are explanatory views showing the manufacturing steps of the method for manufacturing the semiconductor device 1 of the present invention.

First, as shown in FIG. 4A, mounting is performed on the surface of the electrode pattern 2 of the wiring board 8 on which the wiring take-out mechanism 4 formed of the electrode pattern 2 and the through-hole electrode 3 is formed. Bumps 5a of the semiconductor element 6 to be
A groove 17 is formed in a square shape surrounding the position of the electrode pattern 2 to which 5b ... 5n are joined. The groove 17 can be formed, for example, by a removal process such as an end mill.

Next, as shown in FIG. 4B, a silicon rubber is injected into the groove 17 formed in the electrode pattern 2 by the dispenser 15 to form the resin layer 11a. The height of the top portion of the resin layer 11a made of silicon rubber is thicker than the distance between the semiconductor device 1 mounted on the wiring board 8a and the wiring board 8a. The silicone rubber can be easily deformed by external force even after curing.

Subsequently, as shown in FIG. 4C, the bumps 5a and 5b are formed at predetermined positions on the electrode pattern 2 of the wiring board 8a.
The face down bonding is performed by aligning the semiconductor element 6 having 5n formed thereon with a bonding device (not shown). By this bonding, the peripheral portion of the semiconductor element 6 slightly compresses the resin layer 11a. Therefore, the force of compressing due to the load at the time of bonding is reduced, and the defects of the connection portion due to the face-down bumps 5a, 5b, 5n are reduced.

Then, as shown in FIG. 4D, a sealing resin 13 such as an epoxy resin is wrapped around the semiconductor element 6,
A package layer is formed by means of potting, transfer molding, or the like (not shown). in this case,
Since the resin layer 11a seals the space between the wiring board 8a inside the resin layer 11a and the semiconductor element 6, the hollow portion 12 is formed without the sealing resin 13 entering.

After that, as shown in FIG. 4E, the semiconductor device 1 is formed by cutting the sealing resin 13 at a predetermined position using a dicing device (not shown).

As explained above, according to the present invention,
A resin layer that can be easily deformed even after curing is formed between the wiring board and the edge of the semiconductor device, so it is possible to reliably prevent the encapsulation resin from wrapping around the surface of the semiconductor device during resin encapsulation. As a result, a small semiconductor device in which a hollow portion is formed between the wiring board and the semiconductor device has become possible.

Because of these, the sealing resin does not adhere to the functional elements formed on the surface of the chip component and the chip component.
The adverse effect on performance can be suppressed.

Further, the resin layer 1 which can be easily deformed even after curing
When the semiconductor device is mounted on the wiring board by face-down bonding, the pressing force is reduced, and the defects of the face-down connection portion can be reduced.

Further, in the above embodiment, the CCD element was described as an example of the chip component, but it is also possible to use a chip component having functional elements formed on its surface, for example, a SAW chip.

[0036]

According to the present invention, it is possible to provide an electric component in which the entire packaged product is small in size and excellent in manufacturability and in which a hollow portion is formed.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a structure of a semiconductor device of the present invention.

2A to 2D are explanatory views showing a manufacturing process of a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view showing a structure of a semiconductor device of the present invention.

4 (a) to (e) are explanatory views showing a manufacturing process of the semiconductor device of the present invention.

FIG. 5 is a cross-sectional view showing the configuration of a conventional semiconductor device.

FIG. 6 is a cross-sectional view showing the configuration of a conventional semiconductor device.

[Description of Reference Signs] 1, 1a ... Semiconductor device, 2 ... Electrode pattern, 3 ... Through-hole electrode, 4 ... Wiring extraction mechanism, 5a, 5b to 5n
... bumps, 6 ... semiconductor elements, 8, 8a ... wiring board, 1
1, 11a ... Resin layer, 12 ... Hollow part, 13 ... Sealing resin,
17 ... Groove

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H03H 9/25 F term (reference) 4M109 AA02 BA03 CA06 CA21 GA01 GA10 5F061 AA02 BA03 CA06 CA21 CB01 FA01 FA06 5J097 AA29 EE05 HA04 HA07 HA08 JJ03 JJ06 JJ09 JJ10

Claims (5)

[Claims] 1. An electric component in which a chip component is mounted on a wiring board via a pump and is packaged with a sealing resin, wherein a deformable resin layer is provided between the chip component and the wiring board. An electrical component, characterized in that it is formed outside the bump over the entire circumference of the chip component, and a hollow portion is formed inside the bump. 2. The electric component according to claim 1, wherein the resin layer is filled in a groove formed on the wiring board. 3. The electric component according to claim 1, wherein the resin layer is made of silicon rubber. 4. A resin layer, which is deformable on the surface of a wiring board, around the entire periphery of a position along the outer circumference of the chip component outside the bump formed when the chip component is mounted on the wiring board. An applying step of applying a thicker thickness than that between the chip component and the wiring board when mounted, a step of face-down mounting the chip component at a predetermined position of the wiring board via the bump, A method for manufacturing an electric component, comprising: a step of forming a package by encapsulating the resin with an encapsulating resin; and a step of cutting the package outside the package to form a semiconductor device. 5. The method of manufacturing an electric component according to claim 4, wherein in the applying step, the resin layer is filled in a groove formed in the wiring board.