JP2003100753A - Thin film deposition system and thin film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film deposition system and a thin film deposition method capable of shaping a thin film on a substrate in a simple and inexpensive process. SOLUTION: A semiconductor wafer 20 and shaping member 30 are arranged to oppose each other. An insulating layer 21 of a gel state is formed on the surface of the semiconductor wafer 20. Convex portions or protruded fins (31, 32) are formed on the shaping surface 30a of the shaping member 30. When the semiconductor wafer 20 and the shaping member 30 are made to closely contact each other and then separated, the shape of the shaping surface 30a of the shaping member 30 is transferred to the insulating film 21. Thus, concave portions or groove portions (41, 42) are formed on the insulating film 21. Subsequently, after metal wiring material 45 is formed on the entire surface and the surface is graded or polished by a CMP processing, a metal wiring film 45W is obtained in the state where it is buried in the concave portions or the groove portions (41, 42).

Description

Detailed Description of the Invention

TECHNICAL FIELD The present invention relates to a semiconductor wafer,
The present invention relates to a thin film shaping device and a thin film shaping method for shaping thin films formed on the surfaces of various substrates such as glass substrates for liquid crystal display panels, glass substrates for plasma display panels, substrates for photomasks, and printed boards.

2. Description of the Related Art 1 of a method for forming metal wiring such as copper wiring on the surface of a semiconductor wafer (hereinafter simply referred to as "wafer")
One is the damascene method. The wiring forming process by the damascene method is shown in FIG. An insulating film 2 is formed on the wafer 1, and a resist 3 having an opening 3a corresponding to the pattern of the metal wiring to be formed is patterned on the insulating film 2 (FIG. 6 (a)). . Etching is performed using the resist 3 as a mask, whereby openings or recesses 2a corresponding to the pattern of the wiring to be formed are formed in the insulating film 2 (FIG. 6B). Next, the wiring metal film 4 is formed over the entire surface with a thickness that can fill the opening or the recess 2a (FIG. 6C). From this state, the insulating film 2 is formed by CMP (Chemical Mechanical Polishing) method.
The metal film 4 is ground or polished until its surface is exposed. Thus, as shown in FIG. 6D, the metal wiring 4W embedded in the opening or the recess 2a of the insulating film 2 is obtained.

However, in the above-described wiring forming process, the insulating film 2 on the wafer 1 needs to be patterned by applying photolithography. Therefore, the process for shaping the insulating film 2 is complicated, and accordingly, the cost required for forming the wiring is high, which is a problem. Further, in the case of forming the multilevel metal wiring 4A as shown in FIG. 7, a more complicated process called the dual damascene method is required,
The above problem becomes more prominent. Therefore, an object of the present invention is to solve the above technical problems and to provide a thin film shaping device and a thin film shaping method capable of shaping a thin film on a substrate by a simple and inexpensive process.

Means for Solving the Problems and Effects of the Invention The invention according to claim 1 for achieving the above object is a substrate (2).
0) A thin film shaping device for shaping a thin film (21) formed on a surface into a predetermined shape, the shaping member having a shaping surface formed in a shape corresponding to the predetermined shape (30,
80, 81, 90) and a transfer mechanism (61-68) for bringing the shaping member into close contact with the substrate on which the thin film is formed and transferring the shape of the shaped surface to the thin film. It is a device. The alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies in this section below. The invention according to claim 2 is the substrate surface (2
A thin film shaping method for shaping the thin film (21) formed in (0) into a predetermined shape, comprising a shaping member (30, 80, 8)
1, 90), a step of forming a shaping surface having a shape corresponding to the predetermined shape, and a shaping member having the shaping surface adhered to the substrate having the thin film formed thereon to form the shaping surface on the thin film. And a transfer step of transferring the shape of the surface, which is a thin film shaping method. The substrate may be a substrate having a wiring film formed on the surface thereof, such as a semiconductor substrate, a glass substrate for a liquid crystal display panel, a glass substrate for a plasma display panel, and a printed circuit board. The thin film is preferably a gel film, for example. In this case, it is preferable to cure the thin film in parallel with the transfer step of transferring the shape of the shaped surface to the thin film or immediately after this transfer step so that the transferred shape is maintained. . For example, heating means (7
The thin film may be cured by heating the thin film with 1,72). The shape of the shaping surface may include a concave portion or a convex portion, may be a curved surface, or may be a flat surface. For example, when the groove for embedded wiring is formed on the thin film, the shape of the shaping surface may include a rectangular concave portion or a groove portion, or a rectangular convex portion or a ridge portion. In this case, if a multi-step concave portion, a multi-step groove portion, a multi-step convex portion, or a multi-step ridge portion is formed on the shaping surface, an embedding concave portion or groove portion for complex multilayer wiring is formed on the thin film surface. be able to. By embedding a wiring metal in the recess or groove formed on the surface of the thin film in this way,
Even a metal wiring film having a complicated cross-sectional shape can be easily formed without going through a complicated process such as the dual damascene method. As a result, the cost of the wiring forming process can be significantly reduced. Further, if the shaping surface of the shaping member is shaped into a shape corresponding to the curvature of the substrate, the film thickness of the thin film on the substrate surface can be made uniform everywhere. Further, even when unevenness is inevitably generated on the thin film surface in the thin film forming process, the flattening of the thin film surface can be easily achieved by forming the shaping surface of the shaping member as a flat surface. Thus, according to the present invention, the shape of the thin film surface can be easily shaped by bringing the shaping surface of the shaping member into close contact with the thin film on the substrate and transferring the shape of the shaping surface to the thin film. For example, the concavo-convex pattern can be formed on the thin film without performing a photolithography process.

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic sectional view for explaining a thin film forming process according to an embodiment of the present invention. A shaping member 30 made of a material whose surface shape can be processed, such as quartz or metal, and a semiconductor wafer 20 having a gel insulating film 21 formed on the surface are prepared. The surface of the shaping member 30 on the side facing the semiconductor wafer 20 has an insulating film 21.
The shaped surface 30a is shaped into an uneven shape corresponding to the uneven pattern to be formed. That is, the shaping surface 30a is provided with projections or ridges 31 and 32 corresponding to the wiring grooves to be formed in the insulating film 21,
A concave portion 33 is formed between the convex portions or the protrusion portions 31 and 32. The protrusions or ridges 31 are single-stage protrusions or ridges having a substantially rectangular cross section. On the other hand, the protrusions or protrusions 32 are multi-stage (two stages in this embodiment) protrusions or protrusions, and the first protrusion or protrusion having a substantially rectangular cross section. On the surface of the portion 321, a convex portion or a ridge portion 322 having a substantially rectangular cross section is further formed so as to project. Such a shaping member 30 and the semiconductor wafer 20 are arranged so that the insulating film 21 and the shaping surface 30a face each other (FIG. 1 (a)), and then, as shown in FIG. 1 (b), the semiconductor wafer 20 and the shaping member 30 are brought close to each other to bring them into close contact with each other. At this time, since the insulating film 21 is in a gel state, the convex portions or the protruding portions 31 and 32 enter into the insulating film 21. Since the concave portion 33 is a flat surface, the surface of the insulating film 21 is flattened in regions other than the convex portions or the ridge portions 31 and 32. From this state, if necessary, the insulating film 21
A treatment (for example, a heat treatment) for hardening is performed, and then the shaping member 30 is separated from the semiconductor wafer 20. As a result, as shown in FIG. 1C, the insulating film 21 is provided with recesses or grooves 41, 42 corresponding to the projections or ridges 31, 32. The recess or groove 41 is a single-step recess or groove having a rectangular cross section. On the other hand, the recess or groove 42 has a multi-step shape (two-step shape in this embodiment) in which the recess or groove 422 of the second step is further dug deeply in the bottom surface of the recess or groove 421 of the first step. It is a recess or groove.
Thereafter, if necessary, the residual film remaining on the bottoms 41a and 42a of the recesses or grooves 41 and 42 is removed by wet etching or the like. Then, as shown in FIG. 1 (d),
A metal wiring material 4 is formed on the insulating film 21 by, for example, a plating method.
5 are deposited. From this state, the surface of the insulating film 21 is ground or polished by CMP (Chemical Mechanical Polishing), so that the metal wiring film is formed in the recesses or grooves 41 and 42 of the insulating film 21 as shown in FIG. 1 (e). The semiconductor wafer 20 with 45 W embedded therein can be obtained. In this way, according to the method of this embodiment, the single-step or multi-step recesses or grooves 4 are formed without performing the photolithography process on the insulating film 21 on the semiconductor wafer 20.
1, 42 can be formed. This significantly simplifies the process of forming the metal wiring film 45W,
The productivity of the semiconductor device can be improved and the manufacturing cost thereof can be reduced. Although it is necessary to form a concavo-convex pattern on the shaping surface 30a of the shaping member 30 by a photolithography process, the shaping member 30 can be commonly used for processing a plurality of semiconductor wafers 20, and thus the shaping member 30 can be used. The implementation of the photolithography process on the above does not cause a decrease in productivity. FIG. 2 is an illustrative view for explaining a configuration example of a transfer processing device for transferring the shape of the shaping surface 30a of the shaping member 30 to the insulating film 21 on the semiconductor wafer 20. This transfer processing device includes a fixed stage 61 for adsorbing and holding the shaping member 30 with the shaping surface 30a facing downward.
And the semiconductor wafer 20 with the insulating film 21 facing upward.
And a movable stage 62 for adsorbing and holding.
The fixed stage 61 and the movable stage 62 may hold the shaping member 30 and the semiconductor wafer 20 by suction using an electrostatic chuck method, or may hold the shaping member 30 and the semiconductor wafer 20 by suction using a vacuum chuck method, respectively. It may be one. The fixed stage 61 and the movable stage 62 have a holding surface 61a for sucking and holding the shaping member 30 and the semiconductor wafer 20, respectively.
62a is provided so as to face each other vertically. A ball nut 64 that is screwed into a ball screw 63 provided along the vertical direction is coupled to the movable stage 62. The ball nut 64 includes linear guides 65 and 66.
It is fixed to a bracket 67 which is vertically guided by. The rotating force from the motor 68 is transmitted to the ball screw 63. Therefore, the motor 6
The ball screw 63 is rotated by rotating the ball 8 forward / backward, and the movable stage 62 connected to the ball nut 64 is rotated.
Moves up and down along the vertical direction. As a result, the movable stage 62 can be moved toward and away from the fixed stage 61. Therefore, the shaping member 30 is attached to the fixed stage 6
1, the semiconductor wafer 20 having the gel-like insulating film 21 formed on its surface is adsorbed and held on the movable stage 62, and then the movable stage 62 is raised to approach the fixed stage 61. Thereby, the semiconductor wafer 20
It is possible to bring the shaping member 30 into close contact with the shaping member 30 to obtain the state of FIG. Fixed stage 61 and movable stage 6
At least one of the two has built-in heating mechanisms 71 and 72 including lamps and heaters. When the fixed stage 61 and the movable stage 62 are brought close to each other and the state shown in FIG. 1B is reached, the heating mechanisms 71 and 72 are energized and generate heat as necessary to cure the insulating film 21. Then, the motor 68 is rotated in the reverse direction to move the movable stage 62.
The shape of the shaping surface 30 a can be transferred to the insulating film 21 by separating the shape from the fixed stage 61. FIG. 3 is a view for explaining the thin film forming method according to the second embodiment of the present invention, and the shaping member 8 used in place of the shaping member 30 in the above-described first embodiment.
0,81 are shown. In this embodiment, two shaping members 80 and 81 are used to form a multi-step recess or groove similar to the recess or groove 42 in the above-described first embodiment. The shaping member 80 has a convex portion or a ridge portion 8 corresponding to the concave portion or the groove portion 421 of the first stage.
21 is formed on the shaping surface 80a. On the other hand, on the shaping surface 81a of the shaping member 81, a convex portion or a ridge portion 822 corresponding to the concave portion or the groove portion 422 of the second step is formed to project. First, as shown in FIG. 3A, the semiconductor wafer 20 on the surface of which the gel insulating film 21 is formed and the shaping member 80 are opposed to each other, and these are brought close to each other. In this way, the semiconductor wafer 20 and the shaping member 80 are brought into close contact with each other, and then the shaping member 80 is separated from the semiconductor wafer 20 to form the first-stage concave portion or groove 421 (see FIG. 3B). Next, the protrusions or ridges 822 of the shaping member 81 are aligned with the recesses or grooves 421 of the first step (see FIG. 3).
(See (b)), the shaping member 81 is brought close to and closely attached to the semiconductor wafer 20. After that, when the shaping member 81 is separated from the semiconductor wafer 20, as shown in FIG. 3C, the recess or groove 422 of the second step is dug deeper into the bottom of the recess or groove 421 of the first step. Is formed. In this way, by using the two shaping members 80 and 81, it is possible to form the concave portion or the groove portion 42 having a multi-step shape. FIG. 4 is a schematic sectional view for explaining the configuration of the shaping member 90 used in the thin film forming method according to the third embodiment of the present invention. This shaping member 90
Has a recess or groove 91 formed on the shaping surface 90a. An exhaust passage 91a connected to a vacuum source is formed at the bottom of the recess or groove 91. This shaping member 9
0 is a semiconductor wafer 20 on which a gel-like insulating film 21 is formed.
Then, for example, the shaping member 90 is separated from the semiconductor wafer 20 while making a circular motion along the semiconductor wafer 20. As a result, as shown in FIG. 4B, it is possible to form, on the surface of the semiconductor wafer 20, the protrusion 95 of an insulating material that rises in a spiral shape. As described above, the semiconductor wafer 20 or the shaping member 90 is caused to move along the horizontal plane (the surface of the semiconductor wafer 20) according to the shape to be formed on the semiconductor wafer 20, and the semiconductor wafer 20 is moved.
By separating the molding member 90 and the shaping member 90 from each other, a structure having a desired shape can be formed on the semiconductor wafer 20. In this way, a micromachine, a digital micromirror device (DMD (trademark)), or the like can be formed. Although the three embodiments of the present invention have been described above, the present invention is not limited to these embodiments. For example, in the above-described embodiment, each of the protrusions or the protrusions or the recesses or the grooves formed on the shaping member has a rectangular cross section, but as shown in FIG. A shaping member having a trapezoidal convex portion or a ridge portion 97 may be used, or a shaping member having a trapezoidal concave portion or groove may be used. Also, FIG. 5 (b)
As shown in FIG. 5, a shaping member having a convex portion or a ridge portion 98 having a smooth inclined curved surface may be used,
A shaping member having a concave portion or a groove portion having a smoothly inclined curved surface may be used. Needless to say, the cross-sectional shape of the convex portion or the ridge portion or the concave portion or the concave ridge portion may be another shape such as a semicircular shape or a semielliptic shape, and its planar shape is also arbitrary. Further, the present invention is not limited to the case where the concavo-convex pattern is formed on the shaping surface of the shaping member. For example, the shaping surface of the shaping member may be a gently curved surface or a flat surface. May be. For example, if the shaping surface is formed as a gentle curved surface corresponding to the curvature of the semiconductor wafer surface, the thickness of the insulating film can be spread throughout the semiconductor wafer by bringing the shaping surface into close contact with the insulating film on the semiconductor wafer. It can be made uniform.
If the shaping surface is a flat surface, the uneven thin film on the semiconductor wafer can be flattened. further,
In the above embodiment, the semiconductor wafer is taken as an example of the substrate, but also for shaping thin films formed on other types of substrates such as glass substrates for liquid crystal display panels and glass substrates for plasma display panels, The present invention can be widely applied. Needless to say, the thin film shaped by the shaping member is not limited to the insulating film and may be a conductor film. further,
In the transfer processing device of FIG. 2, the shaping member 30 is held on the fixed stage 61, and the semiconductor wafer 20 is held on the movable stage 62.
Although the semiconductor wafer 20 is held by the fixed stage 61, the shaping member 30 may be held by the movable stage 62. Further, in the transfer processing device of FIG. 2, the fixed stage 61 is arranged above the movable stage 62, but the fixed stage may be arranged below and the movable stage may be arranged above it. In addition, both the shaping member 30 and the two stages that respectively hold the semiconductor wafer 20 are movable stages, and the thin film pattern on the shaping member 30 is transferred to the semiconductor wafer 20 by moving these stages close to and away from each other. Good. Furthermore, the two stages that respectively hold the shaping member 30 and the semiconductor wafer 20 do not have to be vertically opposed to each other, but may be opposed to each other in the horizontal direction, for example. Further, the metal constituting the metal wiring material of the above embodiment includes copper, aluminum, titanium, tungsten, or a mixture thereof. The insulating film 21 is composed of an organic insulating film, a low dielectric interlayer insulating film, SOD and SOG. In addition, various design changes can be made within the scope of the matters described in the claims.

[Brief description of drawings]

FIG. 1 is a schematic sectional view for explaining a thin film forming process according to a first embodiment of the present invention.

FIG. 2 is an illustrative view for explaining a configuration example of a transfer processing device for transferring the shape of the shaping surface of a shaping member to an insulating film on a semiconductor.

FIG. 3 is a diagram for explaining the shape of a shaping member used in the thin film forming method according to the second embodiment of the present invention.

FIG. 4 is a schematic sectional view for explaining a configuration of a shaping member used in a thin film forming method according to a third embodiment of the present invention.

FIG. 5 is a diagram showing another example of the convex portion or the ridge portion formed on the shaping surface of the shaping member.

FIG. 6 is a schematic sectional view showing a wiring forming process by a damascene method.

FIG. 7 is a schematic cross-sectional view of a semiconductor wafer having multi-stage wiring formed by a dual damascene method.

[Explanation of symbols]

20 Semiconductor wafer 21 Insulating film 30 Orthopedic member 30a shaped surface 31 Projections or ridges 32 Convex or ridge 321 Projection or ridge on the first stage 322 Convex portion or ridge portion of the second stage 33 Recesses or grooves 41 recess or groove 42 Recess or groove 421 first step recess or groove 422 Second stage recess or groove 45 Metal wiring material 45W metal wiring film 71,72 heating mechanism 80 Orthopedic member 80a shaped surface 821 Convex portion or ridge portion 81 Orthopedic member 81a shaped surface 822 Convex or ridge 90 Orthopedic member 91 Recesses or grooves 91a exhaust path 95 Protrusion

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[Procedure amendment]

[Submission date] September 27, 2001 (2001.9.2)
7)

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

Title: Thin film shaping device and thin film shaping method

[Claims]

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor wafer,
The present invention relates to a thin film shaping device and a thin film shaping method for shaping thin films formed on the surfaces of various substrates such as glass substrates for liquid crystal display panels, glass substrates for plasma display panels, substrates for photomasks, and printed boards.

[0002]

2. Description of the Related Art 1 of a method for forming metal wiring such as copper wiring on the surface of a semiconductor wafer (hereinafter simply referred to as "wafer")
One is the damascene method. The wiring forming process by the damascene method is shown in FIG. An insulating film 2 is formed on the wafer 1, and a resist 3 having an opening 3a corresponding to the pattern of the metal wiring to be formed is patterned on the insulating film 2 (FIG. 6 (a)). . Etching is performed using the resist 3 as a mask, whereby openings or recesses 2a corresponding to the pattern of the wiring to be formed are formed in the insulating film 2 (FIG. 6B).

Next, the wiring metal film 4 is opened or recessed 2.
It is formed on the entire surface with a thickness capable of filling a (FIG. 6 (c)). From this state, the metal film 4 is ground or polished by the CMP (Chemical Mechanical Polishing) method until the surface of the insulating film 2 is exposed. Thus, as shown in FIG. 6D, the metal wiring 4W embedded in the opening or the recess 2a of the insulating film 2 is obtained.

[0004]

However, in the above-described wiring forming process, the insulating film 2 on the wafer 1 needs to be patterned by applying photolithography. Therefore, the process for shaping the insulating film 2 is complicated, and accordingly, the cost required for forming the wiring is high, which is a problem. Further, in the case of forming the multilevel metal wiring 4A as shown in FIG. 7, a more complicated process called the dual damascene method is required,
The above problem becomes more prominent.

Therefore, an object of the present invention is to solve the above technical problems and to provide a thin film shaping device and a thin film shaping method capable of shaping a thin film on a substrate by a simple and inexpensive process. .

[0006]

Means for Solving the Problems and Effects of the Invention The invention according to claim 1 for achieving the above object is a substrate (2).
0) A thin film shaping device for shaping a thin film (21) formed on a surface into a predetermined shape, the shaping member having a shaping surface formed in a shape corresponding to the predetermined shape (30,
80, 81, 90) and a transfer mechanism (61-68) for bringing the shaping member into close contact with the substrate on which the thin film is formed and transferring the shape of the shaped surface to the thin film. It is a device. The alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies in this section below.

The invention according to claim 2 is the substrate surface (20).
A thin film shaping method for shaping a thin film (21) formed on a substrate into a predetermined shape, comprising a shaping member (30, 80, 81,
90), a step of forming a shaping surface having a shape corresponding to the predetermined shape, and bringing the shaping member having the shaping surface into close contact with the substrate having the thin film formed thereon. And a transfer step of transferring a shape, which is a thin film shaping method.

The substrate may be a substrate having a wiring film formed on its surface, such as a semiconductor substrate, a glass substrate for a liquid crystal display panel, a glass substrate for a plasma display panel, a printed circuit board and the like. The thin film is preferably a gel film, for example. In this case, it is preferable to cure the thin film in parallel with the transfer step of transferring the shape of the shaped surface to the thin film or immediately after this transfer step so that the transferred shape is maintained. . For example, the thin film may be cured by heating the thin film by the heating means (71, 72).

The shape of the shaping surface may include a concave portion or a convex portion, may be a curved surface, or may be a flat surface. For example, when the groove for embedded wiring is formed on the thin film, the shape of the shaping surface may include a rectangular concave portion or a groove portion, or a rectangular convex portion or a ridge portion. In this case, if a multi-step concave portion, a multi-step groove portion, a multi-step convex portion, or a multi-step ridge portion is formed on the shaping surface, an embedding concave portion or groove portion for complex multilayer wiring is formed on the thin film surface. be able to.

By embedding a wiring metal in the recess or groove formed on the surface of the thin film in this way,
Even a metal wiring film having a complicated cross-sectional shape can be easily formed without going through a complicated process such as the dual damascene method. As a result, the cost of the wiring forming process can be significantly reduced. Further, if the shaping surface of the shaping member is shaped into a shape corresponding to the curvature of the substrate, the film thickness of the thin film on the substrate surface can be made uniform everywhere. Further, even when unevenness is inevitably generated on the thin film surface in the thin film forming process, the flattening of the thin film surface can be easily achieved by forming the shaping surface of the shaping member as a flat surface.

As described above, according to the present invention, the shaping surface of the shaping member is brought into close contact with the thin film on the substrate and the shape of the shaping surface is transferred to the thin film, whereby the shape of the thin film surface is easily shaped. For example, the concavo-convex pattern can be formed on the thin film without performing a photolithography process.

[0012]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic sectional view for explaining a thin film forming process according to an embodiment of the present invention. A shaping member 30 made of a material whose surface shape can be processed, such as quartz or metal, and a semiconductor wafer 20 having a gel insulating film 21 formed on the surface are prepared. The surface of the shaping member 30 on the side facing the semiconductor wafer 20 has an insulating film 21.
The shaped surface 30a is shaped into an uneven shape corresponding to the uneven pattern to be formed. That is, the shaping surface 30a is provided with projections or ridges 31 and 32 corresponding to the wiring grooves to be formed in the insulating film 21,
A concave portion 33 is formed between the convex portions or the protrusion portions 31 and 32.

The protrusions or ridges 31 are single-stage protrusions or ridges having a substantially rectangular cross section. On the other hand, the protrusions or protrusions 32 are multi-stage (two stages in this embodiment) protrusions or protrusions, and the first protrusion or protrusion having a substantially rectangular cross section. On the surface of the portion 321, a convex portion or a ridge portion 322 having a substantially rectangular cross section is further formed so as to project. Such a shaping member 30 and the semiconductor wafer 20 are arranged so that the insulating film 21 and the shaping surface 30a face each other (FIG. 1 (a)), and then, as shown in FIG. 1 (b), the semiconductor wafer 20 and the shaping member 30 are brought close to each other to bring them into close contact with each other. At this time, since the insulating film 21 is in a gel state, the convex portions or the protruding portions 31 and 32 enter into the insulating film 21. Since the concave portion 33 is a flat surface, the surface of the insulating film 21 is flattened in regions other than the convex portions or the ridge portions 31 and 32.

From this state, a treatment (for example, a heat treatment) for curing the insulating film 21 is performed if necessary, and then the shaping member 30 is separated from the semiconductor wafer 20. As a result, as shown in FIG. 1C, the insulating film 21 is provided with recesses or grooves 41, 42 corresponding to the projections or ridges 31, 32. The recess or groove 41 is a single-step recess or groove having a rectangular cross section. On the other hand, the recess or groove 42 has a multi-step shape (two-step shape in this embodiment) in which the recess or groove 422 of the second step is further dug deeply in the bottom surface of the recess or groove 421 of the first step. It is a recess or groove.

Thereafter, if necessary, the concave portion or the groove portion 4 is formed.
The residual film remaining on the bottoms 41a and 42a of the Nos. 1 and 42 is removed by wet etching or the like. Then, as shown in FIG. 1D, a metal wiring material 45 is deposited on the insulating film 21 by, for example, a plating method. From this state, CMP
By grinding or polishing the surface of the insulating film 21 by (chemical mechanical polishing), the metal wiring film 45 is formed in the recesses or grooves 41 and 42 of the insulating film 21 as shown in FIG.
The semiconductor wafer 20 in which W is embedded can be obtained.

As described above, according to the method of this embodiment, the single-step or multi-step recesses or grooves 41, 42 are formed without performing the photolithography process on the insulating film 21 on the semiconductor wafer 20. can do.
As a result, the process of forming the metal wiring film 45W is significantly simplified, so that the productivity of the semiconductor device can be improved and the manufacturing cost thereof can be reduced. Although it is necessary to form a concavo-convex pattern on the shaping surface 30a of the shaping member 30 by a photolithography process, the shaping member 30 can be commonly used for processing a plurality of semiconductor wafers 20, and thus the shaping member 30 can be used. The implementation of the photolithography process on the above does not cause a decrease in productivity.

FIG. 2 is an illustrative view for explaining a configuration example of a transfer processing device for transferring the shape of the shaping surface 30a of the shaping member 30 to the insulating film 21 on the semiconductor wafer 20. This transfer processing apparatus includes a fixed stage 61 that attracts and holds the shaping member 30 with the shaping surface 30a facing downward, and a movable stage that attracts and holds the semiconductor wafer 20 with the insulating film 21 facing upward. And a stage 62. The fixed stage 61 and the movable stage 62 may be configured to adsorb and hold the shaping member 30 and the semiconductor wafer 20 by an electrostatic chuck method, respectively, or may be a vacuum chuck method and the shaping member 30 and the semiconductor wafer 20.
May be adsorbed and held respectively.

Fixed stage 61 and movable stage 62
Is provided in a state where holding surfaces 61a and 62a for holding the shaping member 30 and the semiconductor wafer 20 by suction are vertically opposed to each other. A ball nut 64 that is screwed into a ball screw 63 provided along the vertical direction is coupled to the movable stage 62. This ball nut 64 is
It is fixed to a bracket 67 that is vertically guided by linear guides 65 and 66. The rotating force from the motor 68 is transmitted to the ball screw 63. Therefore, by rotating the motor 68 in the normal / reverse direction, the ball screw 63 rotates, and the movable stage 62 coupled to the ball nut 64 moves up and down along the vertical direction. As a result, the movable stage 62 is moved to the fixed stage 6
It can be moved closer / away from 1.

Therefore, the shaping member 30 is attached to the fixed stage 61.
The semiconductor wafer 20 having the gel insulating film 21 formed on its surface is adsorbed and held on the movable stage 62, and then the movable stage 62 is raised to approach the fixed stage 61. As a result, the semiconductor wafer 20 and the shaping member 30 can be brought into close contact with each other to obtain the state of FIG. Fixed stage 61 and movable stage 62
At least one of them has built-in heating mechanisms 71, 72 including lamps and heaters. When the fixed stage 61 and the movable stage 62 are brought close to each other and the state shown in FIG. 1B is reached, the heating mechanisms 71 and 72 are energized and generate heat as necessary to cure the insulating film 21.

Thereafter, the shape of the shaping surface 30a can be transferred to the insulating film 21 by reversing the motor 68 to separate the movable stage 62 from the fixed stage 61. FIG. 3 is a diagram for explaining the thin film forming method according to the second embodiment of the present invention, in which shaping members 80 and 81 used in place of the shaping member 30 in the above-described first embodiment are shown. ing. In this embodiment, two shaping members 80 and 81 are used to form a multi-step recess or groove similar to the recess or groove 42 in the above-described first embodiment. The shaping member 80 has 1
A convex portion or a protrusion portion 821 corresponding to the concave portion or the groove portion 421 of the step is formed on the shaping surface 80a. On the other hand, on the shaping surface 81 a of the shaping member 81, the convex portion or the ridge portion 822 corresponding to the concave portion or the groove portion 422 of the second stage.
Are formed to project.

First, as shown in FIG. 3A, the semiconductor wafer 20 on the surface of which the gel insulating film 21 is formed and the shaping member 80 are opposed to each other, and they are brought close to each other. In this way, the semiconductor wafer 20 and the shaping member 80 are brought into close contact with each other, and then the shaping member 80 is attached to the semiconductor wafer 20.
The first-stage concave portion or groove portion 421 is formed by being separated from (see FIG. 3B). Next, the protrusions or ridges 822 of the shaping member 81 are aligned with the recesses or grooves 421 of the first step (see FIG. 3B), and the shaping member 81 is brought into close proximity to the semiconductor wafer 20 and brought into close contact therewith. After that, when the shaping member 81 is separated from the semiconductor wafer 20, as shown in FIG.
At the bottom of 21, a second deeper recess or groove 422 is formed.

In this way, the two shaping members 80, 8
1 is used, the multi-stage recessed portion or groove portion 4 is formed.
2 can be formed. FIG. 4 is a schematic sectional view for explaining the configuration of the shaping member 90 used in the thin film forming method according to the third embodiment of the present invention.
The shaping member 90 has a recessed surface or groove portion 91 formed on the shaping surface 90a. An exhaust passage 91a connected to a vacuum source is formed at the bottom of the recess or groove 91.

After the shaping member 90 is brought into close contact with the semiconductor wafer 20 on which the gel insulating film 21 is formed, for example, the shaping member 90 is separated from the semiconductor wafer 20 while making a circular motion along the semiconductor wafer 20. As a result, as shown in FIG. 4B, it is possible to form, on the surface of the semiconductor wafer 20, the protrusion 95 of an insulating material that rises in a spiral shape. As described above, the semiconductor wafer 20 or the shaping member 9 is formed depending on the shape to be formed on the semiconductor wafer 20.
A structure having a desired shape is formed on the semiconductor wafer 20 by moving the semiconductor wafer 20 and the shaping member 90 away from each other while giving a movement along the horizontal plane (the surface of the semiconductor wafer 20) to 0. be able to.

In this way, a micromachine, a digital micromirror device (DMD (trademark)) or the like can be formed. Although the three embodiments of the present invention have been described above, the present invention is not limited to these embodiments. For example, in the above-described embodiment, each of the protrusions or the protrusions or the recesses or the grooves formed on the shaping member has a rectangular cross section, but as shown in FIG. A shaping member having a trapezoidal convex portion or a ridge portion 97 may be used, or a shaping member having a trapezoidal concave portion or groove may be used. Further, as shown in FIG. 5 (b), a shaping member in which a convex portion or a ridge portion 98 having a smooth inclined curved surface is formed may be used, or a concave portion or a groove portion having a smooth inclined curved surface is formed. Shaped shaping members may be used.

Needless to say, the cross-sectional shape of the convex portion or the ridge portion or the concave portion or the concave ridge portion may be another shape such as a semicircular shape or a semielliptic shape, and its planar shape is also arbitrary. Further, the present invention is not limited to the case where the uneven pattern is formed on the shaping surface of the shaping member, and, for example,
The shaping surface of the shaping member may be a gently curved surface or a flat surface. For example, if the shaping surface is formed as a gentle curved surface corresponding to the curvature of the semiconductor wafer surface, the thickness of the insulating film can be spread throughout the semiconductor wafer by bringing the shaping surface into close contact with the insulating film on the semiconductor wafer. It can be made uniform. If the shaping surface is a flat surface, the uneven thin film on the semiconductor wafer can be flattened.

Further, in the above embodiment, a semiconductor wafer is taken as an example of the substrate, but shaping of a thin film formed on another type of substrate such as a glass substrate for a liquid crystal display panel or a glass substrate for a plasma display panel. Also, the present invention can be widely applied. Needless to say, the thin film shaped by the shaping member is not limited to the insulating film and may be a conductor film. Further, in the transfer processing device of FIG. 2, the shaping member 30 is held by the fixed stage 61, and the movable stage 6 is held.
Although the semiconductor wafer 20 is held by 2, the semiconductor wafer 20 may be held by the fixed stage 61 and the shaping member 30 may be held by the movable stage 62.

Further, in the transfer processing apparatus of FIG. 2, the fixed stage 61 is arranged above the movable stage 62, but if the fixed stage is arranged below and the movable stage is arranged above it. Good. Also, the shaping member 30
Alternatively, both of the two stages that respectively hold the semiconductor wafer 20 may be movable stages, and the thin film pattern on the shaping member 30 may be transferred to the semiconductor wafer 20 by moving them closer to or away from each other.

Further, the two stages respectively holding the shaping member 30 and the semiconductor wafer 20 do not have to be vertically opposed to each other, but may be opposed to each other in the horizontal direction, for example. Further, the metal constituting the metal wiring material of the above embodiment includes copper, aluminum, titanium, tungsten, or a mixture thereof. In addition, the insulating film 21
There are an organic insulating film, a low dielectric interlayer insulating film, SOD, and SOG.

Besides, various design changes can be made within the scope of the matters described in the claims.

[Brief description of drawings]

FIG. 1 is a schematic sectional view for explaining a thin film forming process according to a first embodiment of the present invention.

FIG. 2 is an illustrative view for explaining a configuration example of a transfer processing device for transferring the shape of the shaping surface of a shaping member to an insulating film on a semiconductor.

FIG. 3 is a diagram for explaining the shape of a shaping member used in the thin film forming method according to the second embodiment of the present invention.

FIG. 4 is a schematic sectional view for explaining a configuration of a shaping member used in a thin film forming method according to a third embodiment of the present invention.

FIG. 5 is a diagram showing another example of the convex portion or the ridge portion formed on the shaping surface of the shaping member.

FIG. 6 is a schematic sectional view showing a wiring forming process by a damascene method.

FIG. 7 is a schematic cross-sectional view of a semiconductor wafer having multi-stage wiring formed by a dual damascene method.

[Explanation of symbols] 20 Semiconductor wafer 21 Insulating film 30 Orthopedic member 30a shaped surface 31 Projections or ridges 32 Convex or ridge 321 Projection or ridge on the first stage 322 Convex portion or ridge portion of the second stage 33 Recesses or grooves 41 recess or groove 42 Recess or groove 421 first step recess or groove 422 Second stage recess or groove 45 Metal wiring material 45W metal wiring film 71,72 heating mechanism 80 Orthopedic member 80a shaped surface 821 Convex portion or ridge portion 81 Orthopedic member 81a shaped surface 822 Convex or ridge 90 Orthopedic member 91 Recesses or grooves 91a exhaust path 95 Protrusion

Continued front page    (72) Inventor, Iseki             4 Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto City, Kyoto Prefecture             No. 1 at Tenjin Kitamachi             Manufacturing Co., Ltd. F-term (reference) 4F204 AC03 AC06 AD03 AD04 AH33                       AJ02 AJ06 EA03 EA04 EB11                       EK13 EK17 EK24                 5F033 HH08 HH11 HH18 HH19 MM01                       PP27 PP28 QQ00 QQ09 QQ19                       QQ48 QQ74 RR09 RR21 RR25                       SS21 VV00 VV13 XX01 XX21                       XX33 XX34

Claims (2)

[Claims] 1. A thin film shaping device for shaping a thin film formed on a surface of a substrate into a predetermined shape, comprising a shaping member having a shaping surface formed in a shape corresponding to the predetermined shape, and the shaping member. A thin film forming apparatus comprising: a transfer mechanism that is in close contact with a substrate on which a thin film is formed and transfers the shape of the shaped surface to the thin film. 2. A thin film shaping method for shaping a thin film formed on a surface of a substrate into a predetermined shape, the method comprising: forming a shaped surface having a shape corresponding to the predetermined shape on a shaping member; A thin film shaping method, comprising a step of transferring a shaping member on which the thin film is formed to a substrate on which the thin film is formed to transfer the shape of the shaping surface to the thin film.