JP2003088796A - Apparatus for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control the pollution of the inside of a cup by the crystallization of a scattered coating solution. SOLUTION: An inclined surface 58a for receiving the coating solution scattered from a wafer W is formed on the inner surface 58 of the cup 54. A storage tank 70 for storing a solvent is installed below the inclined surface 58a. A solvent supply hole 59 is formed in the inclined surface 58a to supply the solvent to the tank 70. A prescribed amount of the solvent is always stored in the tank 70, the upper inclined surface 58a is kept in a solvent atmosphere by the evaporation of the stored solvent, and the crystallization of the coating solution adherent to the inclined surface 58a is controlled.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus.

[0002]

2. Description of the Related Art In the manufacturing process of semiconductor devices,
For example, SO on the surface of a semiconductor wafer (hereinafter referred to as "wafer")
A film forming process for forming an interlayer insulating film such as a D (Spin on Dielectric) film is performed. In the film forming process, a coating process for coating a wafer with a coating liquid that forms an interlayer insulating film is performed.

This coating process is usually performed by a coating processing apparatus. For example, the coating process is performed by holding a wafer on a spin chuck, dropping a coating solution on the center of the wafer, rotating the wafer, and centrifuging the wafer. This is performed by diffusing the coating liquid on the wafer surface by force.

The coating processing apparatus is provided with a substantially cylindrical cup that surrounds the periphery of the wafer so that the coating solution scattered from the wafer does not scatter into the coating processing apparatus. Therefore, the coating liquid scattered from the wafer during the coating process
It is received inside the cup, collected in the cup, and drained from, for example, a drain pipe below the cup. However,
Some of the coating liquid adheres to the inner surface of the cup and remains on the inner surface of the cup. If the adhered coating liquid is left as it is, the solvent in the coating liquid volatilizes and crystallizes, which becomes a source of generation of particles. Therefore, it is necessary to frequently remove the coating liquid adhered to the cup.

As a means for removing the coating liquid adhering to the inside of the cup, for example, a large number of cleaning liquid discharge holes are provided along the opening edge of the upper part of the cup, and the cleaning liquid is caused to flow from the cleaning liquid discharge holes to the inside of the cup to adhere. A method of washing off the coating liquid has been proposed (see Japanese Patent Laid-Open No. 5-251327).

[0006]

However, according to such means for removing the coating liquid, the cleaning liquid is discharged from the respective cleaning liquid discharge holes, so that a region where the cleaning liquid is not supplied is generated between the respective cleaning liquid discharge holes and adheres thereto. The coating liquid cannot be removed sufficiently. Further, since the cleaning of the cup is performed while the wafer processing is interrupted, the wafer processing is not performed during that time, and the operation rate of the coating processing apparatus decreases. Also, since a large amount of cleaning liquid is used to clean the cup, the cost of the cleaning liquid increases. In particular, since the coating solution for forming the SOD film is easy to dry and crystallizes in a short time, it is necessary to clean the cup more frequently and use more cleaning solution.

The present invention has been made in view of the above point, and suppresses crystallization of a processing liquid such as a coating liquid adhering to a processing container such as a cup, and the operation of a processing device such as a coating processing device. It is an object of the present invention to provide a processing apparatus for a substrate such as a wafer that suppresses the decrease in the cleaning rate and the consumption of the cleaning liquid.

[0008]

According to a first aspect of the present invention, there is provided a processing apparatus for coating a processing liquid on the surface of a substrate by rotating the substrate in the processing container, wherein the processing container is rotated. A processing apparatus for a substrate is provided, which has a receiving portion that receives the processing liquid scattered from the substrate, and a storage portion that stores the solvent of the processing liquid is provided below the receiving portion. It

According to the present invention, since the storage portion for storing the solvent of the processing liquid is provided below the receiving portion, the stored solvent is volatilized so that the periphery of the receiving portion is maintained in the solvent atmosphere. It This can prevent the treatment liquid adhering to the receiving portion from crystallizing. In addition, the crystallization of the processing liquid can be suppressed without interrupting the processing of the substrate, so that the reduction in the operating rate of the processing apparatus can be suppressed. In addition, since the treatment liquid does not crystallize even if the treatment liquid adheres to the treatment container, it is not necessary to perform frequent cleaning, and the consumption amount of the cleaning liquid such as a solvent can be reduced.

The storage part may be attached to the processing container, and in such a case, the storage part and the processing container are integrated to downsize the entire processing apparatus and simplify piping and the like.

The receiving part is formed so that the received processing liquid flows into the storage part, and a drain pipe for discharging the storage liquid such as the solvent and the processing liquid is attached to the storage part. It may be. In this case, the waste liquid such as the treatment liquid and the solvent used in the treatment device can be collectively discharged from the storage section. This simplifies the piping for drainage. Further, since the solvent in the storage tank mixed with the treatment liquid can be replaced with a new solvent, it is possible to maintain a pure solvent atmosphere around the receiving portion of the treatment container.

The substrate processing apparatus may include a solvent supply unit for supplying a solvent for the processing liquid to the receiving unit. According to this substrate processing apparatus, it is possible to prevent the processing liquid that adheres to the receiving portion from being crystallized by wetting the receiving portion with the solvent. In addition, the treatment liquid that has adhered can be washed away.

The solvent of the processing liquid stored in the storage section may be the solvent supplied from the solvent supply section. In such a case, the solvent supply part can be used as a supply means for storing the solvent in the storage part. Therefore, it is not necessary to additionally provide a supply means for storing the solvent in the storage portion, and the piping system for the solvent can be simplified.

The substrate processing apparatus may include a liquid surface sensor for detecting a liquid surface height in the storage section. With this liquid level sensor, it is possible to monitor the liquid level of the storage part so that the solvent of the processing liquid is always stored in the storage part.
Further, when the processing liquid or the like is allowed to flow into the storage section, it is possible to monitor so that the liquid does not overflow from the storage section.

The substrate processing apparatus may include an exhaust unit for exhausting the atmosphere in the processing container. In this case, it is possible to prevent the periphery of the substrate from becoming a highly concentrated solvent atmosphere due to the evaporation of the solvent from the storage section. Therefore, the substrate can be processed in an appropriate atmosphere.

The substrate processing apparatus may be provided with a temperature adjusting device for adjusting the temperature of the receiving portion. In such a case, for example, the temperature of the receiving portion may be maintained at a low temperature to prevent the treatment liquid from crystallizing. Can be suppressed. Further, the temperature control device may be provided in the storage section. In such a case, the evaporation of the solvent in the storage section can be promoted and the atmosphere around the receiving section can be maintained at a high-concentration solvent atmosphere. As a result, it is possible to suppress the crystallization of the treatment liquid in the receiving portion.

According to a ninth aspect of the present invention, there is provided a processing apparatus which applies a processing liquid to a surface of a substrate by rotating the substrate in the processing container, wherein the processing container is scattered from the rotated substrate. It has a receiving part that receives the processing liquid,
There is provided a substrate processing apparatus, wherein at least the receiving portion is coated with a peelable coating. The coating may be applied to a portion other than the receiving portion, for example, a portion where the treatment liquid may adhere, a surface portion of the treatment container, or the like. Further, the coating may be insoluble in the portion to be coated such as the receiving portion. Further, the coating film may be more water repellent than the covered portion such as the receiving portion.

According to this substrate processing apparatus, since the receiving portion is covered with the film, it is possible to prevent the processing liquid from directly adhering to the receiving portion. Further, when the film becomes dirty, the film can be removed in a short time and the film can be replaced, so that the time for interrupting the substrate processing for cleaning the processing container can be shortened and the decrease in the operating rate of the processing apparatus can be suppressed. . Furthermore, since no cleaning liquid is used, the cost can be reduced accordingly.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of the configuration of an SOD film forming system 1 equipped with a coating processing apparatus according to this embodiment, and FIG. 2 is a front view of the SOD film forming system 1, and FIG. FIG. 3 is a rear view of the SOD film forming system 1.

As shown in FIG. 1, the SOD film forming system 1 carries in and out, for example, 25 wafers W to and from the SOD film forming system 1 from the outside in cassette units and carries the wafer W into and out of the cassette C. The cassette station 2 for ejecting and the like and the processing station 3 formed by arranging various kinds of processing devices for performing a predetermined processing in a single-wafer type in the SOD film forming process are integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a line in the X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placing table 10 serving as a placing portion. And this cassette arrangement direction (X direction)
Further, a wafer carrier 11 that is movable in the wafer arranging direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is provided movably along the carrier path 12.
Each cassette C can be selectively accessed.

The wafer carrier 11 has an alignment function for aligning the wafer W. This wafer carrier 11 is provided on the third side of the processing station 3 side as described later.
The extension device 31 belonging to the processing device group G3 is also accessible.

The processing station 3 is provided with a main carrier unit 13 at the center thereof, and various processing units are arranged in multiple stages around the main carrier unit 13 to form a group of processing units. In this SOD film forming system 1, four processing device groups G1, G2, G3, G4 are arranged, and the first and second processing device groups G1, G2 are arranged on the front side of the SOD film forming system 1. The third processing unit group G3 is
The fourth processing unit group G4 is arranged adjacent to the cassette station 2, and is arranged on the opposite side of the third processing unit group G3 with the main carrier unit 13 interposed therebetween. The main carrier 13 is
The wafer W can be loaded and unloaded into / from various processing devices (described later) arranged in the processing device groups G1, G2, G3, and G4. The number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W, and the number of processing device groups can be arbitrarily selected as long as it is one or more.

In the first processing unit group G1, for example, as shown in FIG. 2, a coating processing unit 17 and a coating processing unit 18 as processing units according to the present embodiment are arranged in two stages in order from the bottom. The second processing apparatus group G2 stores, for example, a coating solution used in the coating processing apparatus 17 and the like, a solvent for the coating solution, and the like, and a processing solution cabinet 19 serving as a supply source of the coating solution and the coating processing apparatus 20. And are arranged in two stages in order from the bottom.

In the third processing unit group G3, for example, as shown in FIG. 3, a cooling unit 3 for cooling the wafer W is used.
0, an extension device 31 for delivering the wafer W, a DCC (Dielectr) for curing the wafer W
ic Cure and Cooling-off) processing devices 32, 33,
Low-temperature heat treatment devices 34 that heat-treat the wafers W at low temperatures are stacked in, for example, five stages from the bottom.

In the fourth processing device group G4, for example, cooling devices 40 and 41, low temperature heat processing device 42, and low oxygen heat processing devices 43 and 44 that perform heat processing while maintaining the wafer W in a low oxygen atmosphere are arranged in order from the bottom. For example, they are stacked in 5 layers.

Next, the structure of the coating processing apparatus 17 described above will be described in detail. FIG. 4 is an explanatory diagram of a vertical cross section showing the outline of the configuration of the coating processing apparatus 17.

The coating processing apparatus 17 has a casing 17a as shown in FIG. 4, for example, and a spin chuck 50 for holding and rotating the wafer W is provided at the center of the casing 17a. . Spin chuck 5
The upper surface of 0 is formed horizontally, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. As a result, the spin chuck 50 can horizontally hold the wafer W by suction.

The spin chuck 50 has a rotary drive unit 51 for rotating the spin chuck 50 at a predetermined speed.
have. The rotation drive unit 51 is provided below the spin chuck 50, for example, and has, for example, a motor. As a result, the wafer W on the spin chuck 50 is
It can be rotated at a predetermined rotation speed according to each processing step.

The coating liquid supply nozzle 52 for supplying the coating liquid as a processing liquid to the wafer W is held by, for example, a nozzle arm 53. The nozzle arm 53 is movable, for example, from the outside of a cup 54, which will be described later, to above the center of the spin chuck 50, and accordingly, the coating liquid supply nozzle 52.
Can move above the center of the spin chuck 50. Therefore, the coating liquid supply nozzle 52 is connected to the spin chuck 5
The coating liquid can be supplied to the central portion of the wafer W on 0.

A cup 54 is provided outside the spin chuck 50 as a processing container for containing the wafer W being processed. The cup 54 has a substantially cylindrical shape whose upper surface is opened as a whole, and is formed so as to surround the outer side and the lower side of the wafer W on the spin chuck 50. Cup 54
Is a substantially cylindrical outer peripheral wall 55 that surrounds the wafer W and the spin chuck 50 from the outside, a cylindrical inner peripheral wall 56 located inside the outer peripheral wall 55, and lower end surfaces of the outer peripheral wall 55 and the inner peripheral wall 56. And a closed bottom surface 57.

On the inner surface 58 of the outer peripheral wall 55, an inclined surface 58a is formed as a receiving portion for receiving and collecting the coating liquid scattered from the wafer W. The inclined surface 58a is
The wafer W held by the spin chuck 50 is formed at a position in the outer direction of the wafer W and at the same height as the wafer W. The inclined surface 58a is, for example,
The inner surface 58 is inclined so as to have a smaller diameter. Also,
An inner surface 58 below the inclined surface 58a is a vertical surface and constitutes a part of a storage tank 70 described later.

Above the inclined surface 58a, the inclined surface 58a
A large number of solvent supply holes 59 are provided as a solvent supply section for supplying the solvent of the coating liquid to a. Solvent supply hole 5
The 9s are arranged at equal intervals on the same circumference of the inclined surface 58a, for example.

Each solvent supply hole 59 communicates with an annular liquid reservoir 60 provided inside the outer peripheral wall 55. Liquid reservoir 60
Is connected to a solvent supply device 62, which is a solvent supply source, via a solvent supply pipe 61, for example. With such a configuration, the solvent supplied from the solvent supply device 62 is supplied to the solvent supply pipe 61.
The liquid in the liquid reservoir 60 is temporarily stored in the liquid reservoir 60, and the solvent in the liquid reservoir 60 is evenly discharged from the solvent supply holes 59 and supplied to the inclined surface 58a. As a result, the coating liquid or the like attached to the inclined surface 58a can be washed away, and the solvent can be supplied to the storage tank 70 below the inclined surface 58a described later.

The inner peripheral wall 56 is formed on the bottom surface 57, for example, inside the inclined surface 58a when seen in a plan view.
Thereby, between the inner peripheral wall 56 and the outer peripheral wall 55,
A storage tank 70 serving as an annular storage portion is formed below the inclined surface 58a. As described above, the solvent from the solvent supply hole 59 flows into the storage tank 70 along the inclined surface 58a, so that the solvent can be stored.
Further, as described above, the coating liquid or the like scattered from the wafer W and received by the inclined portion 58a flows along the inclined surface 58a and is stored in the storage tank 70. Inner wall 56
Is formed so that the upper end portion thereof is lower than the height of the wafer W so that the coating liquid or the like scattered from the wafer W does not hit.

In the storage tank 70, for example, an H liquid level sensor 71 for detecting the upper limit water level H in the storage tank 70, and a reference water level B for storing a predetermined amount of solvent in the storage tank 70. A reference liquid level sensor 72 and an L liquid level sensor 73 for detecting the lowest water level L in the storage tank 70 are provided. The liquid level sensors 71, 72, and 73 are output to a liquid amount control unit 74 that controls the amount of liquid in the storage tank 70.

A drain pipe 75 for draining the liquid in the storage tank 70 is connected to the bottom of the storage tank 70. Drainage pipe 75
An on-off valve 76 is provided in the valve, and the on-off valve 76 is controlled by the liquid amount control unit 74. Therefore, the liquid volume control unit 74 can control the start / stop of drainage from the storage tank 70 by operating the opening / closing valve 76. Further, the liquid volume control unit 74 can send a supply start signal or a supply stop signal to the solvent supply device 62 to control the discharge of the solvent from the solvent supply hole 59. With this configuration, the liquid volume control unit 74 causes the liquid level sensors 71 to
Based on the outputs from ~ 73, the on-off valve 76 and the solvent supply device 62 can be controlled to control the liquid amount in the storage tank 70.

An exhaust pipe 80 as an exhaust unit for exhausting the atmosphere inside the cup 54 is connected to the bottom surface 57 of the cup 54 so that the inside of the cup 54 can be purged. Further, on the inner side of the inner peripheral wall 55 of the cup 54, below the wafer W held by the spin chuck 50, a back surface for cleaning the back surface of the wafer W by supplying a cleaning liquid such as thinner to the back surface of the wafer W. A cleaning nozzle 81 is provided.

On the upper surface of the casing 17a, a duct 82 for supplying a gas, such as nitrogen gas, an inert gas, and air, whose temperature and humidity have been adjusted and which has been cleaned, into the cup 54 is connected to the upper surface of the wafer W. The gas can be supplied during the coating process to maintain the inside of the cup 54 in a predetermined atmosphere.

Next, the operation of the coating processing apparatus 17 configured as described above will be described together with the process of the SOD film forming process performed in the SOD film forming system 1.

First, one unprocessed wafer W is taken out from the cassette C by the wafer transfer body 7 and transferred to the extension device 31 belonging to the third processing device group G3.
Next, the wafer W is transferred to the cooling device 30 by the main transfer device 13 and cooled to a predetermined temperature. The wafer W cooled to a predetermined temperature is
It is conveyed to the coating processing apparatus 17.

The wafer W on which the coating film is formed in the coating treatment apparatus 17 is processed by the main carrier 13 at a low temperature heat treatment apparatus 34 or 42, a low oxygen heat treatment apparatus 43 or 44,
The DCC processing device 32 or 33 and the cooling device 30 are sequentially conveyed, and each device performs a predetermined process. The wafer W that has been cooled by the cooling device 30 is returned to the extension device 31 and then returned to the cassette C by the wafer carrier 11 to complete a series of SOD film forming processes.

Next, the processing process performed by the coating processing apparatus 17 will be described. First, before the wafer W is loaded into the coating processing apparatus 17, for example, clean air is supplied from the duct 82 and exhaust is performed from the exhaust pipe 80 to replace the inside of the cup 54 with a predetermined atmosphere. Maintained.

Further, the solvent of the coating liquid such as cyclohexane and mesitylene is discharged from the solvent supply hole 59, and the solvent is stored up to the reference water level B of the storage tank 70 as shown in FIG. 4, for example. By evaporating the solvent in the storage tank 70, the peripheral portion of the inclined surface 58a located above the storage tank 70 is maintained in the solvent atmosphere.

Then, the wafer W, for which the cooling processing has been completed, is carried into the coating processing apparatus 17, and the spin chuck 5
When it is adsorbed and held on 0, the nozzle arm 53 moves the coating liquid supply nozzle 52 to above the central portion of the wafer W. Then, a predetermined amount of the coating liquid such as polyphenylene is discharged from the coating liquid supply nozzle 52 to the central portion of the wafer W.

When the coating liquid is supplied to the central portion of the wafer W, the wafer W is rotated at a predetermined rotation speed, for example, 1500 rpm.
The wafer W is rotated, and the coating liquid is diffused to the outer peripheral portion of the wafer W by the rotation of the wafer W. When the coating liquid is spread over the entire surface of the wafer W, the rotation speed of the wafer W is, for example, 2000 r.
It is accelerated to pm. As a result, the excess coating liquid on the wafer W is scattered outside the wafer W, and a coating film having a predetermined film thickness is formed on the wafer W. At this time, the coating liquid scattered from the wafer W is received by the inclined portion 58a of the cup 54 and flows into the storage tank 70 along the inclined portion 58a. Further, since the coating liquid adhering to the inclined portion 58a is maintained in the solvent atmosphere, it does not crystallize and stays as a liquid.

When the coating film is formed on the wafer W, the rotation speed of the wafer W is reduced to, for example, 500 rpm, thinner is supplied from the back surface cleaning nozzle 81 to the back surface of the wafer W, and the back surface of the wafer W is cleaned. Be seen. After that, the supply of thinner is stopped, and, for example, the wafer W is left at 500
The wafer W is rotated at rpm so that the wafer W is dried.

When the drying process of the wafer W is completed, the rotation of the wafer W is stopped and the wafer W is rotated by the spin chuck 50.
From the coating processing device 17 to the main transfer device 13. Then, from each solvent supply hole 59 to the inclined surface 5
The solvent is supplied to 8a, and the coating liquid and the like adhering to the inclined surface 58a is washed off. When the predetermined amount of the solvent is supplied to the inclined surface 58a, the supply of the solvent is stopped and the series of processing processes in the coating processing apparatus 17 is completed.

By the way, as described above, the coating liquid, the solvent and the thinner flow into the storage tank 70 during the processing process. When the water level in the storage tank 70 reaches the upper limit water level H, the H liquid level sensor 71 detects the liquid level, and the signal is output to the liquid volume control unit 74. Based on the signal, the liquid volume control unit 74 opens the open / close valve 76 and discharges the stored liquid in the storage tank 70. When the water level in the storage tank 70 drops to the minimum water level L, the L liquid level sensor 73 detects the liquid level, and the signal is output to the liquid volume control unit 74. Then, the liquid amount control unit 74 closes the open / close valve 76. At this time,
A supply start signal is transmitted from the liquid amount control unit 74 to the solvent supply device 62, and the solvent starts to be supplied from the solvent supply device 62 to the solvent supply hole 59. As a result, the solvent is discharged from the solvent supply hole 59, and the solvent starts to be stored again in the storage tank 70. Then, when the liquid level of the solvent in the storage tank 70 reaches the reference water level B, the reference liquid level sensor 72 detects the liquid level and the signal is output to the liquid amount control unit 74. As a result, a supply stop signal is transmitted from the liquid amount control unit 74 to the solvent supply device 62, and the supply of solvent is stopped. In this way, a predetermined amount of solvent is stored again in the storage tank 70. The control work of the liquid amount in the storage tank 70 is performed regardless of the stage of the coating process of the wafer W.

According to the above embodiment, since the storage tank 70 for storing the solvent of the coating liquid is provided below the inclined portion 58a to which the coating liquid scattered from the wafer W adheres, the inclined portion 5 is provided.
It is possible to maintain a solvent atmosphere around 8a. As a result, crystallization of the applied coating liquid or the like is suppressed, and contamination of the cup 54 can be suppressed. Therefore, the maintenance time and the number of times of the coating processing apparatus 17 such as the cup 54 are reduced, and the operation rate of the coating processing apparatus 17 can be improved as compared with the conventional case. In addition, a small amount of solvent is stored in the storage tank 70.
Since the cup 54 can be prevented from being contaminated by storing it in the container, the consumption of the cleaning liquid such as a solvent can be reduced.

Further, the solvent supply hole 5 is provided on the upper portion of the inclined portion 58a.
Since 9 is provided, the coating liquid adhering to the inclined portion 58a can be washed off and the solvent can be stored in the storage tank 70.

Since the storage tank 70 is provided with the reference liquid level sensor 72, the H liquid level sensor 71, and the L liquid level sensor 73, a predetermined amount of solvent can always be stored in the storage tank 70. Further, it is possible to prevent the stored liquid from overflowing from the storage tank 70.

Since the cup 54 is provided with the exhaust pipe 80, even if the solvent is evaporated from the storage tank 70, the peripheral portion of the wafer W is maintained in a predetermined air atmosphere, and the wafer W is processed in the predetermined atmosphere. It can be carried out.

Coating processing apparatus 1 described in the above embodiment
7, a temperature adjusting device for adjusting the temperature of the inclined portion 58a may be provided. FIG. 5 shows such an example, in which the cup 54 is provided on the outer peripheral wall 55, and the temperature adjusting device 10 is provided.
0 is provided. The temperature control device 100 is composed of, for example, a Peltier device 101 which is an electronic cooling / heating device, a power supply 102 for the Peltier device 101, and a temperature control unit 103. For example, the Peltier element 101 is built in the outer peripheral wall 55 near the inclined portion 58a, and the temperature of the Peltier element 101 is controlled by the temperature control unit 103.
Are controlled by operating the power supply 102.

Then, for example, the temperature of the Peltier element 101 is controlled to a temperature of room temperature (for example, 25 ° C.) to about 0 ° C. at which the coating liquid, for example, polyphenylene is difficult to crystallize. By doing so, the inclined portion 58a is maintained at a low temperature, and the volatilization of the coating liquid adhering to the inclined portion 58a can be suppressed. Therefore, it is possible to prevent the coating liquid adhering to the inclined portion 58a from crystallizing and causing particles.

It should be noted that, by using another temperature control device, the storage tank 7
The solvent temperature within 0 may be adjusted. In this case, by raising the temperature in the storage tank 70 and promoting the evaporation of the solvent, it is possible to more reliably maintain the solvent atmosphere around the inclined portion 58a.

In the above embodiment, the periphery of the inclined portion 58a is made into a solvent atmosphere and the evaporation of the solvent or the like of the coating liquid is suppressed to prevent crystallization, so that the contamination of the cup 54 is suppressed. It may be coated with a peelable coating.

FIG. 6 shows such an example. The inclined portion 58a is coated with a film T of a fluorine resin such as Teflon (registered trademark of DuPont) or titanium oxide (photocatalyst). By doing this, the film T
This prevents the cup 54 itself from being contaminated. Further, when the coating T is dirty, it is sufficient to remove the coating T and coat the coating T again. Since this work is simpler and takes less time than the conventional cleaning work, the operation stop time of the coating processing apparatus 17 can be shortened. Furthermore, since no cleaning liquid is used, the cost of cleaning liquid is low. The coating method may be a spray method, a dipping method, a sticking method, or the like.

In addition, the coating of the film is the inclined portion 58.
Not only a, but also the inner surface 55 of the cup 54 or the entire surface of the cup 54 to which the coating liquid may adhere may be applied. Alternatively, the spin chuck 50 or the like may be used. further,
The cup to be coated may have other shapes without the reservoir 70.

In the above embodiment, the present invention is applied to the coating processing apparatus 17 for forming the SOD film.
The present invention is directed to other types of films, such as SOG films that are insulating films,
It can also be applied to a coating treatment device for a protective film such as a polyimide film or a resist film. Further, the present invention can be applied to a coating processing apparatus for substrates other than the wafer W, such as LCD substrates, mask substrates, and reticle substrates.

[0061]

According to the present invention, since the processing container can be maintained in a clean state and the cleaning work of the processing container can be reduced, the operating rate of the processing device can be improved as compared with the conventional case.
Further, it is possible to reduce the consumption of the cleaning liquid and reduce the cost.

[Brief description of drawings]

FIG. 1 is a plan view showing the outline of the configuration of an SOD film forming system equipped with a coating processing apparatus according to an embodiment.

FIG. 2 is a front view of the SOD film forming system of FIG.

3 is a rear view of the SOD film forming system of FIG.

FIG. 4 is an explanatory view of a vertical cross section showing the outline of the configuration of a coating treatment apparatus.

FIG. 5 is an explanatory view of a vertical section showing a partial configuration of a coating treatment apparatus provided with a temperature adjusting device.

FIG. 6 is an explanatory view of a vertical cross section showing a part of the configuration of a coating processing apparatus in which a coating is applied to an inclined surface.

[Explanation of symbols]

1 SOD film forming system 17 Coating treatment device 50 spin chuck 54 cups 58 Inside 58a inclined part 59 Solvent supply hole 70 Storage tank W wafer

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 2H025 AB16 EA05                 4F042 AA07 BA08 BA19 BA21 CB19                       CB26 CC07 EB05 EB07 EB09                       EB13 EB17 EB21 EB24 EB25                 5F045 AB31 BB10 BB14 EB20                 5F046 JA05 JA06 JA09

Claims (9)

[Claims] 1. A processing apparatus for applying a processing liquid to a substrate surface by rotating a substrate in the processing container, wherein the processing container has a receiving portion for receiving the processing liquid scattered from the rotated substrate. However, below the receiving part,
A substrate processing apparatus, comprising: a storage unit for storing the solvent of the processing liquid. 2. The substrate processing apparatus according to claim 1, wherein the storage section is attached to the processing container. 3. The receiving unit is formed so that the received processing liquid flows into the storage unit, and the storage unit drains the storage liquid such as the solvent and the processing liquid. The substrate processing apparatus according to claim 1, wherein a tube is attached. 4. The substrate processing apparatus according to claim 1, further comprising a solvent supply unit that supplies a solvent of a processing liquid to the receiving unit. 5. The substrate processing apparatus according to claim 4, wherein the solvent of the processing liquid stored in the storage unit is the solvent supplied from the solvent supply unit. 6. The liquid level sensor for detecting the liquid level height in the storage section according to claim 1, 2, 3, or 3.
4. The substrate processing apparatus according to either 4 or 5. 7. An exhaust unit for exhausting the atmosphere in the processing container is provided.
5. The substrate processing apparatus according to any one of 5 and 6. 8. A temperature adjusting device for adjusting the temperature of the receiving portion is provided.
4. The substrate processing apparatus according to any one of 4, 5, 6 and 7. 9. A processing apparatus for applying a processing liquid to a surface of a substrate by rotating the substrate in the processing container, wherein the processing container has a receiving portion for receiving the processing liquid scattered from the rotated substrate. An apparatus for processing a substrate, characterized in that at least the receiving portion is covered with a peelable coating.