JP2003087001A - Mounting structure of antenna switching circuit - Google Patents

Mounting structure of antenna switching circuit

Info

Publication number
JP2003087001A
JP2003087001A JP2001270478A JP2001270478A JP2003087001A JP 2003087001 A JP2003087001 A JP 2003087001A JP 2001270478 A JP2001270478 A JP 2001270478A JP 2001270478 A JP2001270478 A JP 2001270478A JP 2003087001 A JP2003087001 A JP 2003087001A
Authority
JP
Japan
Prior art keywords
conductor pattern
conductor
switch diode
circuit
antenna switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001270478A
Other languages
Japanese (ja)
Other versions
JP3811035B2 (en
Inventor
Toshiki Baba
敏喜 馬場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2001270478A priority Critical patent/JP3811035B2/en
Priority to TW091117481A priority patent/TW569559B/en
Priority to KR1020020053396A priority patent/KR20030022041A/en
Priority to US10/235,774 priority patent/US6901250B2/en
Publication of JP2003087001A publication Critical patent/JP2003087001A/en
Application granted granted Critical
Publication of JP3811035B2 publication Critical patent/JP3811035B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • H04B1/48Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Transceivers (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

PROBLEM TO BE SOLVED: To shift resonance frequency to a sufficiently higher frequency to have no influence on the reception, the resonance frequency being generated due to transmission characteristics, in a combination with a low-pass filter as much as possible to reduce own internal stray capacitance of a switch diode. SOLUTION: A first switch diode 4 is connected between a first and second conductor patterns 1a, 1b, an inductance element 5a is connected between the first conductor pattern 1a and a third conductor pattern 1c, a first capacitance element 5c is connected between the third conductor pattern 1c and a fourth conductor pattern 1d, a second switch diode 8 is composed of a bare chip 8a and this chip 8a is mounted on the fourth pattern 1d, with its cathode electrode being connected to this pattern 1d and its anode electrode being connected to the third conductor pattern 1c through a bonding wire 9.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、送受信器におけ
るアンテナ切替回路の実装構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of an antenna switching circuit in a transceiver.

【0002】[0002]

【従来の技術】送受信器におけるアンテナ切替回路は図
6に示すように、図示しないアンテナに接続される入出
力端31と送信回路32の出力端との間に接続された第
一のスイッチダイオード33と、入出力端31と受信回
路34の入力端との間に設けられたπ型のローパスフィ
ルタ35と、受信回路34の入力端とグランドとの間に
接続された第二のスイッチダイオード36とを有する。
ローパスフィルタ35は受信回路34の入力端とグラン
ドとの間に接続された第一の容量素子35aと、受信回
路34の入力端と入出力端31との間に介挿されたイン
ダクタンス素子35bと、入出力端31とグランドとの
間に接続された第二の容量素子35cとから構成され
る。そして、第一のスイッチダイオード33のカソード
はインダクタンス素子35bを介して第二のスイッチダ
イオード36のアノードに直流的に接続される。
2. Description of the Related Art As shown in FIG. 6, an antenna switching circuit in a transmitter / receiver has a first switch diode 33 connected between an input / output terminal 31 connected to an antenna (not shown) and an output terminal of a transmission circuit 32. A π-type low-pass filter 35 provided between the input / output terminal 31 and the input terminal of the receiving circuit 34, and a second switch diode 36 connected between the input terminal of the receiving circuit 34 and the ground. Have.
The low-pass filter 35 includes a first capacitive element 35a connected between the input end of the receiving circuit 34 and the ground, and an inductance element 35b interposed between the input end of the receiving circuit 34 and the input / output end 31. , A second capacitance element 35c connected between the input / output terminal 31 and the ground. The cathode of the first switch diode 33 is DC-connected to the anode of the second switch diode 36 via the inductance element 35b.

【0003】以上の構成において、送信モードでは二つ
のスイッチダイオード33、36がオンとなり、第一の
容量素子35aの両端が第二のスイッチダイオード36
によってショートされると共に、受信回路34の入力端
がグランドにシャントされる。この結果、インダクタン
ス素子35bと第二の容量素子35cとによって並列共
振回路が構成されるが、この共振周波数は送信回路32
から出力される送信信号の周波数にほぼ等しくなってい
る。そして、送信信号は第一のスイッチダイオード33
を介して入出力端31に出力される。この時、受信回路
34の入力端がグランドにシャントされるので、送信信
号は受信回路34には入力されない。
In the above configuration, in the transmission mode, the two switch diodes 33 and 36 are turned on, and both ends of the first capacitance element 35a are connected to the second switch diode 36.
And the input end of the receiving circuit 34 is shunted to the ground. As a result, the inductance element 35b and the second capacitance element 35c form a parallel resonance circuit.
It is almost equal to the frequency of the transmission signal output from. Then, the transmission signal is the first switch diode 33.
Is output to the input / output terminal 31 via. At this time, since the input end of the reception circuit 34 is shunted to the ground, the transmission signal is not input to the reception circuit 34.

【0004】また、受信モードでは二つのスイッチダイ
オード33、36がオフとなるので、入出力端31に入
力された受信信号はローパスフィルタ35を介して受信
回路34に入力される。受信信号は第一のスイッチダイ
オード33がオフなので送信回路32には入力されな
い。
Further, since the two switch diodes 33 and 36 are turned off in the reception mode, the reception signal input to the input / output terminal 31 is input to the reception circuit 34 via the low pass filter 35. The reception signal is not input to the transmission circuit 32 because the first switch diode 33 is off.

【0005】以上の構成を有するアンテナ切替回路の従
来の実装構造を図7に示す。前述した受信回路32及び
送信回路35が設けられた絶縁基板41上には、入出力
端31となる島状の第一の導体パターン41aと、送信
回路32の出力端に接続された島状の第二の導体パター
ン41bと、受信回路34の入力端に接続された島状の
第三の導体パターン41cと、第一の導体パターン41
aと第三の導体パターン41cとに対向して近接すると
共に、接地された金属ケース(図示せず)に接続された
第四の導体パターン41dとが設けられる。これらの導
体パターンは絶縁基板41上に被着された銅箔をエッチ
ング等することによって形成される。
A conventional mounting structure of the antenna switching circuit having the above configuration is shown in FIG. On the insulating substrate 41 on which the reception circuit 32 and the transmission circuit 35 described above are provided, an island-shaped first conductor pattern 41a to be the input / output end 31, and an island-shaped first conductor pattern 41a connected to the output end of the transmission circuit 32. The second conductor pattern 41b, the island-shaped third conductor pattern 41c connected to the input end of the receiving circuit 34, and the first conductor pattern 41.
A fourth conductor pattern 41d is provided so as to face and be close to a and the third conductor pattern 41c and connected to a grounded metal case (not shown). These conductor patterns are formed by etching a copper foil deposited on the insulating substrate 41.

【0006】そして、第一の導体パターン41aと第二
の導体パターン41bとの間に第一のスイッチダイオー
ド33が接続され、第一の導体パターン41aと第三の
導体パターン41cとの間にインダクタンス素子35b
が接続され、第三の導体パターン41cと第四の導体パ
ターン41dとの間に第一の容量素子35aと第二のス
イッチダイオード36とが接続され、第一の導体パター
ン41aと第四の導体パターン41dとの間に第二の容
量素子35cが接続される。
The first switch diode 33 is connected between the first conductor pattern 41a and the second conductor pattern 41b, and the inductance is provided between the first conductor pattern 41a and the third conductor pattern 41c. Element 35b
Are connected, the first capacitance element 35a and the second switch diode 36 are connected between the third conductor pattern 41c and the fourth conductor pattern 41d, and the first conductor pattern 41a and the fourth conductor are connected. The second capacitive element 35c is connected to the pattern 41d.

【0007】第一及び第二の容量素子35a、35cと
インダクタンス素子35bとはそれぞれ両端に接続用の
電極を有するいわゆるチップ部品の形状を有している。
また、第一及び第二のスイッチダイオード33、36は
両端に接続用の端子が突出した樹脂モールド部品の形状
を有する。そして、各容量素子35a、35c及びイン
ダクタンス素子35bの電極と各スイッチダイオード3
3、36の端子とがそれぞれ導体パターン41a乃至4
1dに接続されてアンテナ切替回路の実装構造が構成さ
れる。
The first and second capacitance elements 35a and 35c and the inductance element 35b each have a so-called chip component shape having electrodes for connection at both ends.
Further, the first and second switch diodes 33 and 36 have the shape of resin molded parts with connecting terminals protruding at both ends. The electrodes of the capacitance elements 35a and 35c and the inductance element 35b and the switch diodes 3 are
Terminals 3 and 36 are conductor patterns 41a to 4 respectively.
The mounting structure of the antenna switching circuit is configured by being connected to 1d.

【0008】[0008]

【発明が解決しようとする課題】以上の構成において、
受信モードでは第二のスイッチダイオード36がオフと
なるが、オフ状態の第二のスイッチダイオード36は図
8に示すような等価回路となる。図8において、Cjは
PN接合間の等価容量であり、LwはP層あるいはN層
と接続用端子とを接続するボンデングワイヤの等価イン
ダクタンスであり、Llは接続用端子の等価インダクタ
ンスである。接続用端子の等価インダクタンスLlはボ
ンデングワイヤの等価インダクタンスLwよりも格段に
大きい。また、Csは内部の等価浮遊容量であり、これ
は接合間等価容量Cjとボンデングワイヤの等価インダ
クタンスLwとの直列回路に対して並列に接続される形
となる。
In the above configuration,
Although the second switch diode 36 is turned off in the reception mode, the second switch diode 36 in the off state has an equivalent circuit as shown in FIG. In FIG. 8, Cj is the equivalent capacitance between the PN junctions, Lw is the equivalent inductance of the bonding wire connecting the P layer or N layer and the connection terminal, and Ll is the equivalent inductance of the connection terminal. The equivalent inductance Ll of the connecting terminal is significantly larger than the equivalent inductance Lw of the bonding wire. Cs is an internal equivalent stray capacitance, which is connected in parallel to the series circuit of the equivalent capacitance Cj between junctions and the equivalent inductance Lw of the bonding wire.

【0009】上記の等価回路では、ローパスフィルタ3
5のカットオフ周波数Fc(ほぼ2800MHz)より
も高くなると、浮遊容量Csの存在によって直列共振周
波数とそれよりも高い並列共振周波数とが現れる。そし
て、それぞれの共振周波数は接続用端子の等価インダク
タンスLlと第一の容量素子35aの容量とによって低
い方に移動する。そのため、ローパスフィルタ35とオ
フ状態のスイッチダイオード36とを含めた全体の伝送
特性は、図9に示すように、直列共振周波数Fsで減衰
し、並列共振周波数Fpでピークとなる。並列共振周波
数Fpは、オフ状態における第二のスイッチダイオード
36の等価回路の各常数を用いて計算すると受信周波数
の二倍程度(ほぼ4800MHz)となる。このため、
この付近に存在する信号が受信回路に入力され、受信妨
害を引き起こすという問題があった。
In the above equivalent circuit, the low-pass filter 3
Above the cutoff frequency Fc of 5 (approximately 2800 MHz), a series resonance frequency and a parallel resonance frequency higher than that appear due to the presence of the stray capacitance Cs. Then, each resonance frequency moves to the lower side due to the equivalent inductance Ll of the connection terminal and the capacitance of the first capacitive element 35a. Therefore, the entire transmission characteristics including the low pass filter 35 and the switch diode 36 in the off state are attenuated at the series resonance frequency Fs and peaked at the parallel resonance frequency Fp, as shown in FIG. The parallel resonance frequency Fp is about twice the reception frequency (approximately 4800 MHz) when calculated using the constants of the equivalent circuit of the second switch diode 36 in the off state. For this reason,
There is a problem that signals existing in the vicinity of this are input to the receiving circuit and cause reception interference.

【0010】そこで、本発明では、スイッチダイオード
自身が有する内部の浮遊容量を極力小さくし、ローパス
フィルタとの組み合わせにおける伝送特性で生ずる共振
周波数を、受信に影響がない程度に高い方に移動させる
ことを目的とする。
Therefore, in the present invention, the internal stray capacitance of the switch diode itself is made as small as possible, and the resonance frequency generated by the transmission characteristics in combination with the low-pass filter is moved to a higher level so that reception is not affected. With the goal.

【0011】[0011]

【課題を解決するための手段】以上の課題を解決するた
め、送信回路と受信回路とアンテナ切替回路とが設けら
れた絶縁基板を備え、前記絶縁基板上にはアンテナに接
続された第一の導体パターンと前記送信回路の出力端に
接続された第二の導体パターンと前記受信回路の入力端
に接続された第三の導体パターンと前記第三の導体パタ
ーンに近接すると共に接地された第四の導体パターンと
を形成し、前記アンテナ切替回路は前記第一の導体パタ
ーンと前記第二の導体パターン間に接続された第一のス
イッチダイオードと、少なくとも前記第一の導体パター
ンと前記第三の導体パターンとの間に接続されたインダ
クタンス素子と前記第三の導体パターンと前記第四の導
体パターンとの間に接続された容量素子とを有するロー
パスフィルタと、前記第三の導体パターンと前記第四の
導体パターンとの間に接続され、前記第一のスイッチダ
イオードに連動して共にオン又はオフに切り替えられる
第二のスイッチダイオードとを有し、前記第二のスイッ
チダイオードをベアチップで構成し、前記ベアチップを
前記第四の導体パターン上に載置すると共にその下面の
電極を前記第四の導体パターンに接続し、上面の電極を
ボンデングワイヤによって前記第三の導体パターンに接
続した。
In order to solve the above problems, an insulating substrate provided with a transmitting circuit, a receiving circuit, and an antenna switching circuit is provided, and the first substrate connected to the antenna is provided on the insulating substrate. A conductor pattern, a second conductor pattern connected to the output end of the transmitter circuit, a third conductor pattern connected to the input end of the receiver circuit, and a fourth conductor grounded close to the third conductor pattern. And a first switch diode connected between the first conductor pattern and the second conductor pattern, at least the first conductor pattern and the third A low-pass filter having an inductance element connected between a conductor pattern and a capacitance element connected between the third conductor pattern and the fourth conductor pattern, A second switch diode that is connected between the third conductor pattern and the fourth conductor pattern and is turned on or off together with the first switch diode. Of the switch diode is a bare chip, the bare chip is placed on the fourth conductor pattern, the electrode on the lower surface thereof is connected to the fourth conductor pattern, and the electrode on the upper surface is bonded by the bonding wire. Connected to the conductor pattern.

【0012】また、前記容量素子を前記第三の導体パタ
ーンと、前記第三の導体パターン上に膜状に形成された
誘電体層と、前記誘電体層上に膜状に形成された導体層
とから構成し、前記導体層を前記第四の導体パターンに
接続し、前記ボンデングワイヤを前記導体層の上方に位
置させた。
The capacitive element may include the third conductor pattern, a dielectric layer formed in a film shape on the third conductor pattern, and a conductor layer formed in a film shape on the dielectric layer. And connecting the conductor layer to the fourth conductor pattern and positioning the bonding wire above the conductor layer.

【0013】また、前記誘電体層と前記導体層とを厚膜
印刷手段または薄膜蒸着手段によって形成した。
The dielectric layer and the conductor layer are formed by thick film printing means or thin film vapor deposition means.

【0014】[0014]

【発明の実施の形態】本発明のアンテナ切替回路の実装
構造を図1及び図2に示す。図1は平面図であり、図2
は図1における2−2線の断面図である。図1、図2に
おいて、絶縁基板1上には図示しないアンテナに接続さ
れると共に、入出力端となる島状の第一の導体パターン
1aと、送信回路2(図3参照)の出力端に接続された
島状の第二の導体パターン1bと、受信回路3(図3参
照)の入力端に接続された島状の第三の導体パターン1
cと、第一の導体パターン1aと第三の導体パターン1
cとに対向して近接すると共に、接地された金属ケース
(図示せず)に接続された第四の導体パターン1dが設
けられる。これらの導体は絶縁基板1上に被着された銅
箔をエッチング等の手段によって形成される。
1 and 2 show a mounting structure of an antenna switching circuit according to the present invention. 1 is a plan view and FIG.
2 is a sectional view taken along line 2-2 in FIG. 1 and 2, an insulating substrate 1 is connected to an antenna (not shown), and is connected to an island-shaped first conductor pattern 1a serving as an input / output end and an output end of a transmission circuit 2 (see FIG. 3). The connected island-shaped second conductor pattern 1b and the island-shaped third conductor pattern 1 connected to the input end of the receiving circuit 3 (see FIG. 3).
c, the first conductor pattern 1a and the third conductor pattern 1
A fourth conductor pattern 1d is provided so as to face and be close to c and be connected to a grounded metal case (not shown). These conductors are formed by a method such as etching a copper foil deposited on the insulating substrate 1.

【0015】そして、第一の導体パターン1aと第二の
導体パターン1bとの間には第一のスイッチダイオード
4が設けられる。第一のスイッチダイオード4は両端に
突出する接続用のアノード端子4a、カソード端子4b
を有し、アノード端子4aが第二の導体パターン1bに
接続され、カソード端子4bが第一の導体パターン1a
に接続される。また、第一の導体パターン1aと第三の
導体パターン1cとの間にはチップ部品状のインダクタ
ンス素子5aが設けられ、各端部の電極が第一の導体パ
ターン1aと第三の導体パターン1cに接続される。さ
らに、第一の導体パターン1aと第四の導体パターン1
dとの間にはチップ部品状の第二の容量素子5bが設け
られ、各端部の電極が第一の導体パターン1aと第四の
導体パターン1dとに接続される。
A first switch diode 4 is provided between the first conductor pattern 1a and the second conductor pattern 1b. The first switch diode 4 has an anode terminal 4a for connection and a cathode terminal 4b for projecting at both ends.
The anode terminal 4a is connected to the second conductor pattern 1b, and the cathode terminal 4b is connected to the first conductor pattern 1a.
Connected to. In addition, an inductance element 5a in the form of a chip component is provided between the first conductor pattern 1a and the third conductor pattern 1c, and the electrodes at each end have the first conductor pattern 1a and the third conductor pattern 1c. Connected to. Furthermore, the first conductor pattern 1a and the fourth conductor pattern 1
A second capacitor element 5b in the form of a chip component is provided between the first and second conductor patterns 1a and 1d, and electrodes at each end are connected to the first conductor pattern 1a and the fourth conductor pattern 1d.

【0016】また、図2に示すように、第三の導体パタ
ーン1c上には厚膜印刷あるいは薄膜蒸着によって誘電
体層6が形成され、誘電体層6の上には膜印刷あるいは
薄膜蒸着によって導体層7が形成される。そして、導体
層7は第四の導体パターン1dに接続される。この結
果、第三の導体パターン1cと誘電体層6と導体層7に
よって第一の容量素子5cが構成される。
Further, as shown in FIG. 2, a dielectric layer 6 is formed on the third conductor pattern 1c by thick film printing or thin film deposition, and on the dielectric layer 6 is film printing or thin film deposition. The conductor layer 7 is formed. Then, the conductor layer 7 is connected to the fourth conductor pattern 1d. As a result, the third conductor pattern 1c, the dielectric layer 6, and the conductor layer 7 constitute the first capacitive element 5c.

【0017】さらに、第四の導体パターン1d上には第
三の導体パターン1cに対向した位置に第二のスイッチ
ダイオード8となるベアチップ8aが載置され、その下
面の電極(カソード電極)が第四の導体パターン1dに
接続されると共に、上面の電極(アノード電極)がボン
デングワイヤ9によって第三の導体パターン1cに接続
される。ボンデングワイヤ9は導体層7の上方に位置さ
せている。此によってボンデングワイヤ9と第一の容量
素子5cを構成する一方の電極となる第三の導体パター
ン1cとの間の浮遊容量を少なくしている。
Further, a bare chip 8a, which will be the second switch diode 8, is mounted on the fourth conductor pattern 1d at a position facing the third conductor pattern 1c, and the electrode (cathode electrode) on the lower surface thereof is the first. The electrode (anode electrode) on the upper surface is connected to the fourth conductor pattern 1d and is also connected to the third conductor pattern 1c by the bonding wire 9. The bonding wire 9 is located above the conductor layer 7. As a result, the stray capacitance between the bonding wire 9 and the third conductor pattern 1c which is one of the electrodes forming the first capacitance element 5c is reduced.

【0018】以上の実装構造によって図3に示す送受信
回路が構成され、インダクタンス素子5aと第二の容量
素子5bと第一の容量素子5cとによってローパスフィ
ルタ5が形成される。また、第一のスイッチダイオード
4のカソードはインダクタンス素子5a、ボンデングワ
イヤ9を介して第二のスイッチダイオード8のアノード
に接続されるので、二つのスイッチダイオード4、8を
共にオン又はオフとすることが容易となる。
The above-mentioned mounting structure constitutes the transmission / reception circuit shown in FIG. 3, and the inductance element 5a, the second capacitance element 5b, and the first capacitance element 5c form the low-pass filter 5. Further, since the cathode of the first switch diode 4 is connected to the anode of the second switch diode 8 via the inductance element 5a and the bonding wire 9, both of the two switch diodes 4 and 8 are turned on or off. It will be easy.

【0019】以上の構成で、送信モードでは第一及び第
二のスイッチダイオード4、8がオンとされ、第一の容
量素子5cの両端が第二のスイッチダイオード8によっ
てショートされると共に、受信回路3の入力端がグラン
ドにシャントされる。この結果、インダクタンス素子5
aと第二の容量素子5bとによって並列共振回路が構成
されるが、この共振周波数は送信回路2から出力される
送信信号の周波数にほぼ等しくなっている。そして、送
信信号は第一のスイッチダイオード4を介して第一の導
体パターン1aに出力される。この時、受信回路3の入
力端がグランドにシャントされるので、送信信号は受信
回路3には入力されない。
With the above structure, in the transmission mode, the first and second switch diodes 4 and 8 are turned on, both ends of the first capacitive element 5c are short-circuited by the second switch diode 8, and the receiving circuit is received. The input end of 3 is shunted to ground. As a result, the inductance element 5
The parallel resonant circuit is configured by a and the second capacitive element 5b, and the resonant frequency is substantially equal to the frequency of the transmission signal output from the transmission circuit 2. Then, the transmission signal is output to the first conductor pattern 1a via the first switch diode 4. At this time, since the input end of the receiving circuit 3 is shunted to the ground, the transmission signal is not input to the receiving circuit 3.

【0020】また、受信モードでは二つのスイッチダイ
オード4、8がオフとなるので、第一の導体パターン1
aに入力された受信信号はローパスフィルタ5を介して
受信回路3に入力される。受信信号は第一のスイッチダ
イオード4がオフなので送信回路2には入力されない。
In the receiving mode, the two switch diodes 4 and 8 are turned off, so the first conductor pattern 1
The received signal input to a is input to the receiving circuit 3 via the low pass filter 5. The reception signal is not input to the transmission circuit 2 because the first switch diode 4 is off.

【0021】また、上記の実装構造では、ボンデングワ
イヤ9の等価インダクタンスをLw、ベアチップ8aの
オフ時のPN接合間の等価容量をCjとした場合、第三
の導体パターン1cと第四の導体パターン1dとの間に
構成される等価回路は図4に示すようになり、ベアチッ
プ8aのアノード電極と第三の導体パターン1cとの間
に形成される浮遊容量Csは、それら間に存在する導体
層7のために無視し得る程度に極めて小さくなる。
Further, in the above mounting structure, when the equivalent inductance of the bonding wire 9 is Lw and the equivalent capacitance between the PN junctions when the bare chip 8a is off is Cj, the third conductor pattern 1c and the fourth conductor are used. An equivalent circuit configured between the pattern 1d and the pattern 1d is as shown in FIG. 4, and the stray capacitance Cs formed between the anode electrode of the bare chip 8a and the third conductor pattern 1c is a conductor existing between them. Due to layer 7, it is very small and negligible.

【0022】従って、ボンデングワイヤ9の等価インダ
クタンスLwと、ベアチップ8aのオフ時のPN接合間
の等価容量Cjと、浮遊容量Csとによる直列共振周波
数及び並列共振周波数は極めて高くなり、しかも、第二
のスイッチダイオード8には接続用の端子による等価イ
ンダクタンスも存在しないので、第一の容量素子5cを
含めた直列共振周波数、並列共振回路も従来よりは格段
に高くなり、図5に示すように、直列共振周波数Fsが
ほぼ900MHz、並列共振周波数Fpがほぼ1500
MHzとなる。そして、この並列共振周波数Fpにおけ
るレベルは、周波数が高いので従来よりも格段に低くな
り、この周波数付近に存在する他の信号による受信妨害
が回避される。
Accordingly, the series resonance frequency and the parallel resonance frequency due to the equivalent inductance Lw of the bonding wire 9, the equivalent capacitance Cj between the PN junctions of the bare chip 8a when the bare chip 8a is off, and the stray capacitance Cs become extremely high, and Since the second switch diode 8 does not have an equivalent inductance due to a connecting terminal, the series resonance frequency including the first capacitive element 5c and the parallel resonance circuit are much higher than in the conventional case, and as shown in FIG. , The series resonance frequency Fs is about 900 MHz, and the parallel resonance frequency Fp is about 1500.
It becomes MHz. Since the level at the parallel resonance frequency Fp is high, the level becomes much lower than before, and reception interference by other signals existing near this frequency is avoided.

【0023】[0023]

【発明の効果】以上説明したように、本発明では、アン
テナ切替回路は第一の導体パターンと第二の導体パター
ン間に接続された第一のスイッチダイオードと、少なく
とも第一の導体パターンと第三の導体パターンとの間に
接続されたインダクタンス素子と第三の導体パターンと
第四の導体パターンとの間に接続された容量素子とを有
するローパスフィルタと、第三の導体パターンと第四の
導体パターンとの間に接続され、第一のスイッチダイオ
ードに連動して共にオン又はオフに切り替えられる第二
のスイッチダイオードとを有し、第二のスイッチダイオ
ードをベアチップで構成し、ベアチップを第四の導体パ
ターン上に載置すると共にその下面の電極を第四の導体
パターンに接続し、上面の電極をボンデングワイヤによ
って第三の導体パターンに接続したので、第二のスイッ
チダイオードが有する浮遊容量が小さくなり、浮遊容量
に起因する共振周波数が高くなり、受信妨害が少なくな
る。また、第二のスイッチダイオードを第四の導体パタ
ーン上に構成するので、絶縁基板の面積を少なくでき
る。
As described above, in the present invention, the antenna switching circuit has the first switch diode connected between the first conductor pattern and the second conductor pattern, and at least the first conductor pattern and the first conductor pattern. A low-pass filter having an inductance element connected between the third conductor pattern and the third conductor pattern and a capacitance element connected between the fourth conductor pattern, and the third conductor pattern and the fourth conductor pattern. A second switch diode that is connected between the conductor pattern and is turned on or off together with the first switch diode; the second switch diode is a bare chip; and the bare chip is a fourth chip. On the lower conductor pattern, connect the lower electrode to the fourth conductor pattern, and connect the upper electrode to the third conductor pattern with a bonding wire. Having connected over emissions, stray capacitance of the second switching diode is reduced, the higher the resonance frequency due to the stray capacitance, reception interference is reduced. Moreover, since the second switch diode is formed on the fourth conductor pattern, the area of the insulating substrate can be reduced.

【0024】また、容量素子を第三の導体パターンと、
第三の導体パターン上に膜状に形成された誘電体層と、
誘電体層上に膜状に形成された導体層とから構成し、導
体層を第四の導体パターンに接続し、ボンデングワイヤ
を導体層の上方に位置させたので、浮遊容量が一層小さ
くなる。また、容量素子は第三の導体パターン上に構成
できるので絶縁基板を小さくできる。
Further, the capacitive element is provided with a third conductor pattern,
A dielectric layer formed in a film shape on the third conductor pattern,
Stray capacitance is further reduced because it is composed of a conductor layer formed in a film shape on the dielectric layer, the conductor layer is connected to the fourth conductor pattern, and the bonding wire is located above the conductor layer. . Moreover, since the capacitive element can be formed on the third conductor pattern, the insulating substrate can be made smaller.

【0025】また、誘電体層と導体層とを厚膜印刷手段
または薄膜蒸着手段によって形成したので、第二の容量
素子はインダクタンス成分がなくなり、不要な自己共振
を発生しない。
Further, since the dielectric layer and the conductor layer are formed by the thick film printing means or the thin film vapor deposition means, the second capacitive element has no inductance component and does not generate unnecessary self-resonance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のアンテナ切替回路の実装構造を示す平
面図である。
FIG. 1 is a plan view showing a mounting structure of an antenna switching circuit of the present invention.

【図2】本発明のアンテナ切替回路の実装構造を示す要
部断面図である。
FIG. 2 is a cross-sectional view of essential parts showing a mounting structure of the antenna switching circuit of the present invention.

【図3】本発明のアンテナ切替回路の構成を示す回路図
である。
FIG. 3 is a circuit diagram showing a configuration of an antenna switching circuit of the present invention.

【図4】本発明のアンテナ切替回路の要部の等価回路図
である。
FIG. 4 is an equivalent circuit diagram of a main part of the antenna switching circuit of the present invention.

【図5】本発明のアンテナ切替回路の伝送特性図であ
る。
FIG. 5 is a transmission characteristic diagram of the antenna switching circuit of the present invention.

【図6】従来のアンテナ切替回路の構成を示す回路図で
ある。
FIG. 6 is a circuit diagram showing a configuration of a conventional antenna switching circuit.

【図7】従来のアンテナ切替回路の実装構造を示す平面
図である。
FIG. 7 is a plan view showing a mounting structure of a conventional antenna switching circuit.

【図8】従来のアンテナ切替回路の要部の等価回路図で
ある。
FIG. 8 is an equivalent circuit diagram of a main part of a conventional antenna switching circuit.

【図9】従来のアンテナ切替回路の伝送特性図である。FIG. 9 is a transmission characteristic diagram of a conventional antenna switching circuit.

【符号の説明】[Explanation of symbols]

1 絶縁基板 1a 第一の導体パターン 1b 第二の導体パターン 1c 第三の導体パターン 1d 第四の導体パターン 2 送信回路 3 受信回路 4 第一のスイッチダイオード 5 ローパスフィルタ 5a インダクタンス素子 5b 第二の容量素子 5c 第一の容量素子 6 誘電体層 7 導体層 8 第二のスイッチダイオード 8a ベアチップ 9 ボンデングワイヤ 1 Insulation board 1a First conductor pattern 1b Second conductor pattern 1c Third conductor pattern 1d Fourth conductor pattern 2 Transmitter circuit 3 Receiver circuit 4 First switch diode 5 Low pass filter 5a Inductance element 5b Second capacitive element 5c First capacitive element 6 Dielectric layer 7 Conductor layer 8 Second switch diode 8a bare chip 9 Bonding wire

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 送信回路と受信回路とアンテナ切替回路
とが設けられた絶縁基板を備え、前記絶縁基板上にはア
ンテナに接続された第一の導体パターンと前記送信回路
の出力端に接続された第二の導体パターンと前記受信回
路の入力端に接続された第三の導体パターンと前記第三
の導体パターンに近接すると共に接地された第四の導体
パターンとを形成し、前記アンテナ切替回路は前記第一
の導体パターンと前記第二の導体パターン間に接続され
た第一のスイッチダイオードと、少なくとも前記第一の
導体パターンと前記第三の導体パターンとの間に接続さ
れたインダクタンス素子と前記第三の導体パターンと前
記第四の導体パターンとの間に接続された容量素子とを
有するローパスフィルタと、前記第三の導体パターンと
前記第四の導体パターンとの間に接続され、前記第一の
スイッチダイオードに連動して共にオン又はオフに切り
替えられる第二のスイッチダイオードとを有し、前記第
二のスイッチダイオードをベアチップで構成し、前記ベ
アチップを前記第四の導体パターン上に載置すると共に
その下面の電極を前記第四の導体パターンに接続し、上
面の電極をボンデングワイヤによって前記第三の導体パ
ターンに接続したことを特徴とするアンテナ切替回路の
実装構造。
1. An insulating substrate provided with a transmitting circuit, a receiving circuit, and an antenna switching circuit, wherein a first conductor pattern connected to the antenna and an output end of the transmitting circuit are provided on the insulating substrate. A second conductor pattern, a third conductor pattern connected to the input end of the receiving circuit, and a fourth conductor pattern which is close to the third conductor pattern and grounded, and the antenna switching circuit Is a first switch diode connected between the first conductor pattern and the second conductor pattern, and an inductance element connected at least between the first conductor pattern and the third conductor pattern A low-pass filter having a capacitive element connected between the third conductor pattern and the fourth conductor pattern, the third conductor pattern and the fourth conductor pattern A second switch diode that is connected between the first switch diode and the first switch diode and is turned on or off together with the first switch diode, the second switch diode being a bare chip, and the bare chip being a bare chip. Is placed on the fourth conductor pattern, the lower surface electrode is connected to the fourth conductor pattern, and the upper surface electrode is connected to the third conductor pattern by a bonding wire. Mounting structure of antenna switching circuit.
【請求項2】 前記容量素子を前記第三の導体パターン
と、前記第三の導体パターン上に膜状に形成された誘電
体層と、前記誘電体層上に膜状に形成された導体層とか
ら構成し、前記導体層を前記第四の導体パターンに接続
し、前記ボンデングワイヤを前記導体層の上方に位置さ
せたことを特徴とする請求項1に記載のアンテナ切替回
路の実装構造。
2. The capacitive element, the third conductor pattern, a dielectric layer formed in a film shape on the third conductor pattern, and a conductor layer formed in a film shape on the dielectric layer. The mounting structure for an antenna switching circuit according to claim 1, wherein the mounting layer is connected to the fourth conductor pattern, and the bonding wire is located above the conductor layer. .
【請求項3】 前記誘電体層と前記導体層とを厚膜印刷
手段または薄膜蒸着手段によって形成したことを特徴と
する請求項2に記載のアンテナ切替回路の実装構造。
3. The mounting structure for an antenna switching circuit according to claim 2, wherein the dielectric layer and the conductor layer are formed by a thick film printing means or a thin film vapor deposition means.
JP2001270478A 2001-09-06 2001-09-06 Mounting structure of antenna switching circuit Expired - Fee Related JP3811035B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001270478A JP3811035B2 (en) 2001-09-06 2001-09-06 Mounting structure of antenna switching circuit
TW091117481A TW569559B (en) 2001-09-06 2002-08-02 Installation structure of antenna switching circuit
KR1020020053396A KR20030022041A (en) 2001-09-06 2002-09-05 Mounting structure for antenna switching circuits
US10/235,774 US6901250B2 (en) 2001-09-06 2002-09-05 Mounting structure of antenna switching circuit in which reception interference is suppressed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001270478A JP3811035B2 (en) 2001-09-06 2001-09-06 Mounting structure of antenna switching circuit

Publications (2)

Publication Number Publication Date
JP2003087001A true JP2003087001A (en) 2003-03-20
JP3811035B2 JP3811035B2 (en) 2006-08-16

Family

ID=19096130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001270478A Expired - Fee Related JP3811035B2 (en) 2001-09-06 2001-09-06 Mounting structure of antenna switching circuit

Country Status (4)

Country Link
US (1) US6901250B2 (en)
JP (1) JP3811035B2 (en)
KR (1) KR20030022041A (en)
TW (1) TW569559B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910494A (en) * 2021-02-01 2021-06-04 维沃移动通信有限公司 Signal monitoring circuit and method and electronic equipment

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10321467A1 (en) * 2003-05-13 2004-12-09 Infineon Technologies Ag Test method for characterization of the output circuits of high-speed memory module in which the inputs to the output circuit are temporarily disconnected from their memory cells and instead connected to a test data source

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223621A (en) * 1990-12-25 1992-08-13 Fujitsu Ten Ltd Antenna switching circuit
JP2874496B2 (en) 1992-12-26 1999-03-24 株式会社村田製作所 High frequency switch
FI102121B1 (en) * 1995-04-07 1998-10-15 Lk Products Oy Radio communication transmitter / receiver
JPH08307101A (en) 1995-05-02 1996-11-22 Murata Mfg Co Ltd Antenna changeover rf switch
EP0784384B1 (en) * 1995-07-19 2003-04-16 TDK Corporation Antenna switch
DE19842706A1 (en) * 1998-09-17 2000-03-23 Siemens Ag Multi-band aerial switch for multi-band mobile radio telephone
JP3389886B2 (en) * 1999-06-09 2003-03-24 株式会社村田製作所 High frequency circuit device and communication device
JP2001044702A (en) * 1999-07-30 2001-02-16 Kyocera Corp High frequency switch circuit
JP2002016401A (en) * 2000-06-29 2002-01-18 Kyocera Corp High frequency switch circuit
JP2002246945A (en) * 2001-02-14 2002-08-30 Hitachi Metals Ltd Antenna switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910494A (en) * 2021-02-01 2021-06-04 维沃移动通信有限公司 Signal monitoring circuit and method and electronic equipment
CN112910494B (en) * 2021-02-01 2022-08-02 维沃移动通信有限公司 Signal monitoring circuit and method and electronic equipment

Also Published As

Publication number Publication date
KR20030022041A (en) 2003-03-15
TW569559B (en) 2004-01-01
US6901250B2 (en) 2005-05-31
JP3811035B2 (en) 2006-08-16
US20030058185A1 (en) 2003-03-27

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