JP2003086780A - Solid-state radiation detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently read accumulated electric charges in a solid-state radiation detector provided with a substripe electrode. SOLUTION: A 1st conductive layer 21, a photoconductive layer 22 for recording, a charge transfer layer 23, a photoconductive layer 24 for reading, a 2nd conductive layer 25 having a stripe electrode 26 composed of many linear elements 26a and a substripe electrode 27 composed of many linear elements 27a, an insulating layer 30, and a base 18, are arranged in this order. A shading film 31 is provided at parts matching the respective elements 27a on the base 18 and parts between the elements 26a and 27a to constitute a solid-state radiation detector 20a. In this case, one cycle is made 10 to 150 μm for circulating of a pair of elements 26a and 27a.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention
Dose or amount of light emitted by excitation of the radiation
A power storage unit that stores a charge corresponding to the
The present invention relates to a radiation solid state detector. [0002] Today, radiography for medical diagnosis and the like
In the shadow, the charge obtained by detecting the radiation is the latent image charge.
Once stored in the power storage unit, and the stored latent image charge is
Radiation solid state detection that is converted into electrical signals representing image information and output
Radiation image using a detector (hereinafter also simply referred to as a detector)
Various information recording / reading apparatuses have been proposed. This device
Various types of radiation solid-state detectors are used.
Have been proposed, but the accumulated charge is transferred to the outside.
Read light to the detector from the aspect of the charge readout process to read out
Light reading method that reads by reading (electromagnetic wave for reading)
There is. The applicant of the present invention has a high-speed response and efficient reading.
Optical readout that can achieve both good signal charge extraction
As a radiation solid state detector, JP-A-2000-105
297, JP 2000-284056, JP 200
In 0-284057, the recording radiation or the
Light emitted by radiation excitation (hereinafter referred to as recording light)
A first conductive layer transparent to the recording light
Recording photoconductive layer exhibiting electrical conductivity and the first conductive layer
For the charge of the same polarity as the charge to be charged
Against the charge of the same polarity and the opposite polarity.
A charge transport layer that acts as a substantially conductive material, reading light (reading)
It exhibits electrical conductivity when irradiated with electromagnetic waves)
A photoconductive layer for reading and a second conductor transparent to the reading light
The electric layers are stacked in this order, and the recording photoconductive layer and the charge
Image information is carried in the electricity storage unit formed at the interface with the transport layer
A detector that accumulates signal charge (latent image charge)
Yes. The above-mentioned Japanese Patent Laid-Open No. 2000-284056.
No. and Japanese Patent Application Laid-Open No. 2000-284057
In addition, an electrode of the second conductive layer having transparency to the reading light is provided.
Photo-charge pair generating linear shape that is transparent to many reading lights
In addition to a stripe electrode consisting of electrodes,
Outputs electrical signals at a level corresponding to the amount of accumulated latent image charge
A plurality of photoelectric charge pair non-generating linear electrodes
Alternating with and parallel to the charge pair generating linear electrodes
Furthermore, a detector provided in the second conductive layer is proposed. In this way, a large number of photocharge pairs versus non-generating linear electricity
A sub-striped electrode comprising a pole is provided in the second conductive layer
As a result, a new
Capacitors are formed and stored in the electricity storage unit by recording light
The transport charge with the opposite polarity to the latent image charge is
This sub-striped electrode is also charged by reordering.
It is possible to This allows the read photoconductive layer to be
A capacitor formed between the stripe electrode and the power storage unit.
The amount of the transport charge distributed to the sensor is
Relatively less than when no electrode is provided
That can be taken out of the detector as a result
Increase the amount of charge to improve reading efficiency and read
Both high-speed response and efficient signal charge extraction
You can also plan. [0006] By the way, as described above.
In detectors equipped with various sub-striped electrodes,
The width of the load-generating linear electrode, the width of the photocharge versus the non-generating linear electrode
And the width between each linear electrode greatly increases the reading efficiency of the stored charge.
Affect. For example, the width of the photocharge pair generating linear electrode and
If the width of the non-generating linear electrode is reduced, the electrical resistance
There is a risk of delay in the read signal due to high resistance, and
Also, disconnection due to defective etching during electrode manufacturing
May occur. Also, when the width between each linear electrode is narrowed
Discharge occurs when a high voltage is applied to each linear electrode.
There is a risk of short-circuiting between the linear electrodes, and when manufacturing the electrodes
Between the linear electrodes due to contamination
There is a risk. Also, the width of the photocharge pair generating linear electrode, the photocharge
Increase the width of the non-generating linear electrodes and the width between each linear electrode.
The latent image charge accumulated in the power storage unit
Detects because the jumping distance that the load goes out becomes longer
The reading efficiency of the instrument is reduced. As described above, the photocharge pair generating linear electrode
Width, photocharge vs. non-generating linear electrode width and between each linear electrode
Various problems arise if the width is not optimized. The present invention has been made in view of the above circumstances.
Radiation solid state detector provided with sub-striped electrode
In this case, the stored charge can be read out efficiently.
It is intended to provide a ray solid state detector
The SUMMARY OF THE INVENTION Radiation solids according to the present invention
The detector includes a first conductive layer that is transmissive to recording light.
And exhibits photoconductivity when irradiated with recording light
The recording photoconductive layer and a charge corresponding to the amount of recording light
Power storage unit that stores image charge and irradiation of reading light
A photoconductive layer for reading that exhibits photoconductivity, and reading light
Photoelectric charge pair generating linear electrodes that are transparent to
A large number of photo-charge pair non-generating linear electrodes,
Alternating arrangement of generating linear electrodes and non-generating linear electrodes
Radiation formed by laminating the second conductive layer formed in this order
In a solid state detector, a photocharge pair generating linear electrode and a photocharge pair
When a pair with a non-generating linear electrode is one cycle, the cycle is
The range is from 10 μm to 150 μm
Is. Here, “photo charge pair generating linear electrode and photo charge pair”
“A pair with a non-generating linear electrode is defined as one cycle” in FIG.
As shown, paired with the pair A photo-charge pair generating linear electrode
Photo charge of pair B adjacent to A and intermediate between non-generating linear electrodes
From pair A photocharge pair non-generating linear electrode and adjacent to pair A
1 turn to the middle of the paired photo-charge pair generating linear electrode
It means to be a period. Therefore, the width of “period” is
Pair A of photocharge pair generating linear electrode and pair adjacent to pair A
The light of the pair A from the middle of the photocharge pair of B and the non-generating linear electrode
Non-charge pair generating linear electrode and photoelectric of pair C adjacent to pair A
The length is up to the middle of the load-generating linear electrode. In addition,
The elementary pitch need not be the same as the above period, for example,
One pixel may be composed of four periods of linear electrodes.
Yes. In addition, the above pairs need to be placed consecutively.
For example, as shown in FIG.
Make arrangements such as arranging (thinning out) at intervals of minutes.
Both are possible. Further, the “radiation solid state detector” is the first guide.
An electroconductive layer, a recording photoconductive layer, a reading photoconductive layer, and a second conductive layer.
It has a conductive layer in this order, a photoconductive layer for recording and a reading layer
A power storage unit is formed between the photoconductive layer and the photoconductive layer.
In addition, other layers and micro conductive members (micro plates)
It may be formed by laminating and the like. Also this
The radiation solid state detector is a light that carries radiation image information
(Radiation or light generated by radiation excitation)
The image information is recorded as an electrostatic latent image.
Anything that can be made
Yes. As a method of forming the power storage unit,
Is provided with a charge transport layer and the charge transport layer and the photoconductive layer for recording.
A method for forming a power storage unit at the interface with a layer
JP 2000-105297, JP 2000-28
4056), this trap is provided with a trap layer.
Stored in the layer or at the interface between the trap layer and the photoconductive layer for recording.
Methods for forming electrical parts (eg, US Pat. No. 4,453,546)
No. 8), or the latent image charge is concentrated and stored.
A method of providing a conductive member or the like (JP 2000
-284057)) or the like may be used. Further, “light having transparency to reading light”
“Charge pair generating linear electrode” means that reading light is transmitted and reading light is transmitted.
It is an electrode that generates charge pairs in the conductive layer. Also, "light
`` Charge pair non-generating linear electrode '' is a latent image accumulated in the electricity storage unit
To output an electrical signal at a level corresponding to the amount of charge
It is an electrode, and it is desirable to have a light shielding property against the reading light
However, there is no photocharge pair between the non-generating linear electrode and the reading light irradiation means.
When a light-shielding film having a light-shielding property is provided between them,
The non-generating linear electrode is not necessarily required to have a light shielding property.
Here, “light-shielding” means completely blocking the reading light.
Not limited to those that do not generate charge pairs,
Even though it has some permeability, the charge generated by it
Including those where the pair is not practically problematic
The Therefore, all charge pairs generated in the reading photoconductive layer
Only by reading light transmitted through the charge pair generating linear electrode
However, the reading is slightly transmitted through the non-generating linear electrode.
Charge pairs also generate charge pairs in the photoconductive layer for reading.
It shall be possible. Further, “reading light” is emitted from the electrostatic recording medium.
The electrostatic latent image can be electrically read.
Anything that makes it possible, specifically light or
Radiation etc. It should be noted that radiation using the detector according to the invention
When recording and reading line images, for example,
A book as described in 2000-284056
Recording method using a conventional detector to which the invention is not applied and
Without changing the reading method and its device
Can be used. According to the present invention, there is provided a radiation solid state detector.
For example, a photo-charge pair generating linear electrode and a non-photo-charge generating linear electrode
This period is changed from 10 μm to 1
Because it has been optimized to 50μm, the amount of stored charge that can be extracted is
Can be increased, improving reading efficiency and image S / N
Can be made. That is, when narrower than 10 μm,
Read signal delay occurs because the electrical resistance of the linear electrode increases.
Or etching failure during electrode manufacturing
There is a risk of disconnection due to the like. Also between the linear electrodes
Since the width becomes narrow, a high voltage is applied to each linear electrode.
There is a risk that electrical discharge will occur, causing a short circuit between the linear electrodes.
In addition, each linear electrode is caused by contamination of dust during electrode manufacturing.
There is a risk of short circuit. When the width is larger than 150 μm,
Photocharge pair generation line from the center of the linear electrode
To the center of the non-generating linear electrode
Since the distance becomes longer, the latent image charge accumulated in the power storage unit
The jump distance that the photo-generated charge goes away will be longer
Therefore, the reading efficiency of the detector is reduced. Therefore, the above period is changed from 10 μm to 15 μm.
Avoiding these problems by making the range 0 μm
Provide a reliable radiation solid state detector
It is possible to DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.
The embodiment will be described. FIG. 1 shows a radiation solid according to the present invention.
It is a figure which shows schematic structure of 1st Embodiment of a detector,
1A is a perspective view of the radiation solid state detector 20a, FIG.
(B) is the XZ cross section of the Q arrow part of the radiation solid state detector 20a.
Fig. 1 (C) shows the arrow P part of the radiation solid detector 20a.
It is XY sectional drawing. FIG. 2 shows a charge pair generating linear electrode.
And a charge-pair non-generating linear electrode pair as one cycle
It is sectional drawing similar to FIG. 1 (B) for demonstrating a period.
In FIG. 2, support 18, insulating layer 30 and
The light shielding film 31 is omitted. The radiation solid detector 20a detects a subject.
Recording light carrying image information of radiation such as transmitted X-rays
Against (radiation or light generated by radiation excitation)
The first conductive layer 21 having transparency and the first conductive layer 2
1 by receiving recording light that has passed through 1
A photoconductive layer for recording 22 which is generated and exhibits conductivity;
Is substantially insulated against latent image polar charge (eg negative charge)
Transport pole that acts as a body and has a polarity opposite to that of the latent image polar charge
Almost conductive to ionic charge (positive charge in the above example)
Charge transport layer 23 acting as a body, irradiated with reading light
Reading light which generates charge pairs and exhibits conductivity
Conductive layer 24, stripe electrode 26, and sub stripe
Second conductive layer 25 provided with electrode 27, transmissive for reading light
Insulating layer 30, having transparency to reading light
The support 18 is arranged in this order. Light for recording
At the interface between the conductive layer 22 and the charge transport layer 23, the photoconductive layer for recording is used.
Latent image polar charge carrying image information generated in layer 22
Accumulating power storage units 29 are formed in a two-dimensional distribution. The support 18 is transparent to the reading light.
A glass substrate or the like can be used. Also for reading light
In addition to being transparent, its coefficient of thermal expansion is for reading
Use a material that is relatively close to the coefficient of thermal expansion of the material of the photoconductive layer 24
It is more desirable. For example, the reading photoconductive layer 24 is used.
When using a-Se (amorphous selenium)
Then, the coefficient of thermal expansion of Se is 3.68 × 10 ^-5 / K @ 40
Considering that it is ° C., the coefficient of thermal expansion is 1.0 to 10.
0x10 ^-5 / K @ 40 ° C., more preferably 4.0-
8.0 × 10 ^-5 Use material that is / K @ 40 ° C.
The material with a coefficient of thermal expansion in this range is polycarbonate.
And organic poly, such as polymethyl methacrylate (PMMA)
Mer material can be used. This makes the board
As a support 18 and a reading photoconductive layer 24 (Se film);
The thermal expansion of the
Large temperature support, such as during ship transport under cold climate conditions.
The support 18 and the reading photoconductive layer 24
Thermal stress occurs at the interface of the two, both physically peel off,
The reading photoconductive layer 24 is broken or the support 18 is broken.
The problem of destruction due to thermal expansion difference does not occur.
Yes. In addition, organic polymer materials are more resistant than glass substrates.
There is a merit that it is strong against hitting. The material of the recording photoconductive layer 22 includes a-
Se (amorphous selenium), PbO, PbI ₂ Etc.
Lead oxide (II), lead iodide (II), Bi ₁₂ (Ge, S
i) O ₂₀ , Bi ₂ I ₃ / Organic polymer nanocomposite
A photoconductive substance mainly composed of at least one of
Is appropriate. As the substance of the charge transport layer 23, for example,
Mobility of negative charge charged on one conductive layer 21 and its opposite polarity
The larger the difference in positive charge mobility that becomes the property, the better (for example, 1
0 ² Or more, preferably 10 ³ Above) Poly N-vinyl cal
Vazole (PVK), N, N'-diphenyl-N, N'-bis
(3-Methylphenyl)-[1,1′-biphenyl] -4,4 ′
-Organics such as diamine (TPD) and discotic liquid crystals
Compounds or TPD polymers (polycarbonate
G, polystyrene, PUK) dispersion, Cl 10-20
A semiconductor material such as a-Se doped with 0 ppm is suitable.
The In particular, organic compounds (PVK, TPD, discote
Liquid crystal) is preferred because it has light insensitivity.
In addition, since the dielectric constant is generally small, the charge transport layer 23 and the reading layer are used.
The capacity of the photoconductive layer 24 is reduced, and the signal is extracted during reading.
Efficiency can be increased. In addition, "it has light insensitivity
“Perform” is almost conductive even when irradiated with recording light or reading light.
It means not exhibiting sex. As the material of the reading photoconductive layer 24, a-
Se, Se-Te, Se-As-Te, metal-free phthalos
Anine, metal phthalocyanine, MgPc (Magnesium ph
talocyanine), VoPc (phase II of Vanadyl phthal
cyanine), CuPc (Cupper phtalocyanine), etc.
A photoconductive substance mainly composed of at least one
is there. The thickness of the recording photoconductive layer 22 is sufficient to prevent recording light.
In order to be able to absorb in minutes, 50 μm or more and 1000
It is preferable that it is below μm. The charge transport layer 23 and the reading photoconductive layer 24 are also provided.
And the total thickness is less than 1/2 of the thickness of the recording photoconductive layer 22
It is desirable that
For example, 1/10 or less, and
Is preferably 1/100 or less. The material of each of the above layers is the first conductive layer 21.
Negative charge, and the second conductive layer 25 is charged positive charge.
Formed at the interface between the recording photoconductive layer 22 and the charge transport layer 23.
The negative charge as the latent image polar charge is accumulated in the power storage unit 29.
And charge transport layer 23 as latent image polar charge
Rather than the negative charge mobility of the
So-called holes with higher positive charge mobility as a load
An example of what is suitable for functioning as a transport layer
There are, however, these are charges of opposite polarity
Well, when reversing the polarity in this way, the hole transport layer
A charge transport layer that functions as an electron transport layer
Just make a few changes, such as changing to a charge transport layer
Yes. For example, the recording photoconductive layer 22 may be the above-described one.
Amorphous selenium a-Se, lead (II) oxide, lead iodide
A photoconductive substance such as (II) can be used in the same manner, and the charge transport layer
N-trinitrofluorenylidene aniline as 23
(TNFA) Dielectric, Trinitrofluorenone (TNF) / Po
Reester dispersion, asymmetric diphenoquinone derivatives are suitable
As the photoconductive layer 24 for reading, the above metal-free phthalo
Cyanine and metal phthalocyanine can be used as well. In the detector 20a, the power storage unit 29
At the interface between the recording photoconductive layer 22 and the charge transport layer 23
However, the present invention is not limited to this. For example, US Pat. No. 4,535,468
Latent image polar charge is stored as a trap
The power storage unit may be formed by a trap layer. The first conductive layer 21 is used for recording light.
What is necessary is just to have transparency, for example for visible light
In order to make it transparent, as a light-transmissive metal thin film
Well known Nesa film (SnO ₂ ), ITO (Indium Tin O
xide) or amorphous light that is easy to etch
IDIXO (Idemitsu IndiumX-m) is a permeable metal oxide
etal Oxide: Idemitsu Kosan Co., Ltd.)
For thickness of about 200 nm, preferably 100 nm or more
Can be. Also, aluminum Al, gold Au,
Pure metal such as molybdenum Mo, chromium Cr, etc., for example, 20
The thickness should be less than or equal to nm (preferably about 10 nm)
Can also be transparent to visible light.
The Note that X-rays are used as recording light, and the first conductive layer 21 is used.
When recording an image by irradiating the X-ray from the side, the first
The conductive layer 21 does not need to be transparent to visible light.
Thus, the first conductive layer 21 is made of, for example, 100 nm thick Al.
Pure metals such as Au and Au can also be used. The second conductive layer 25 has a large number of reading light transmission properties.
Strike element (photocharge pair generating linear electrode) 26a
Striped electrodes 26 arranged in a loop and a large number of reading lights
Light-shielding element (photocharge pair non-generating linear electrode) 27a
The sub-striped electrode 27 is formed by arranging them in a stripe shape.
And. Each element 26a, 27a
26a and element 27a alternately and one another
They are arranged in parallel. Both elements
A part of the photoconductive layer 24 for reading is interposed between
The live electrode 26 and the sub stripe electrode 27 are electrically
Insulated. The sub stripe electrode 27 is used for recording light.
Storage formed at substantially the interface between the conductive layer 22 and the charge transport layer 23.
The level of electric power according to the amount of latent image charge accumulated in the electric unit 29
This is a conductive member for outputting an air signal. Here, each element of the stripe electrode 26
As the material of the electrode material forming the top 26a, ITO (In
dium Tin Oxide), IDIXO (Idemitsu Indium X-me
talOxide; Idemitsu Kosan Co., Ltd.), aluminum or
Ribden or the like can be used. Sub strike
The material of the electrode material forming each element 27a of the electrode 27
As the quality, aluminum, molybdenum, chromium, etc.
Can be used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 10 μm, and the element 26a
And the element 27a has a width of 15 μm and adjacent elements
The width between the terminals is 10 μm, that is, the period is 50 μm.
Yes. The pixel pitch is 50 μm, and the electrode for one pixel
Is composed of a pair of elements. Further, each element 27a on the support 18 is provided.
And between the element 26a and the element 27a
Irradiation intensity of reading light to element 27a in the corresponding part
Is smaller than the irradiation intensity of the reading light to the element 26a.
A light-shielding film 31 made of a member having poor light transmittance is provided.
It is As a member of the light shielding film 31, it is not always necessary.
The light shielding film 31 may not have to be insulating.
Specific resistance is 2 × 10 ^-6 Or more (more preferably 1 × 10
¹⁵ Ω · cm or less) can be used. Example
For example, if it is a metal material, use Al, Mo, Cr, etc.
MOS for organic materials ₂ , WSi ₂ TiN
Etc. can be used. The specific resistance of the light shielding film 31 is
It is more preferable to use one having a resistance of 1 Ω · cm or more. At least as a member of the light shielding film 31
When a conductive member such as a metal material is used, the light shielding film 3
1 to avoid direct contact between the element 27a
An insulator is placed between them. The detector 20a of this embodiment is a
As an insulating material, between the second conductive layer 25 and the support 18
SiO ₂ An insulating layer 30 made of or the like is provided. This insulation
The thickness of the layer 30 is preferably about 0.01 to 10 μm.
Or about 0.1 μm to 1 μm, most preferably 0.5 μm
The degree is good. In this detector 20a, a recording light guide is used.
Between the first conductive layer 21 and the power storage unit 29 with the electric layer 22 in between.
A capacitor C * a is formed, and the charge transport layer 23 and the reading
Power storage unit 29 and stripe electrode with taking photoconductive layer 24 in between
26 (element 26a) with a capacitor C * b
The read photoconductive layer 24 and the charge transport layer 23 are formed.
Power storage unit 29 and sub-strip electrode 27 (element
To the capacitor 27a). Reading
During the charge rearrangement at the time of taking, each capacitor C * a,
Amount of positive charge Q + a, Q + distributed to C * b, C * c
b, Q + c, the total Q + is the same as the amount Q- of latent image polar charge
The quantity proportional to the capacitance Ca, Cb, Cc of each capacitor
It becomes. This can be expressed as follows:
The Q− = Q + = Q + a + Q + b + Q + c Q + a = Q + × Ca / (Ca + Cb + Cc) Q + b = Q + × Cb / (Ca + Cb + Cc) Q + c = Q + × Cc / (Ca + Cb + Cc) and detector The signal charge is
Positive charge amount Q + distributed to the capacitors C * a and C * c
a, the same as the sum of Q + c (Q + a + Q + c)
Positive charge distributed to the capacitor C * b is taken as signal charge.
(For details, see JP-A-2000-284056)
reference). Here, the stripe electrode 26 and the substrate
Capacitors C * b and C * c by tripe electrode 27
Considering the quantity, the capacity ratio Cb: Cc is
The width ratio Wb: Wc of the ment 26a, 27a. one
On the other hand, the capacitance Ca of the capacitor C * a and the capacitor C * b
The capacitance Cb is substantially equal even if the sub-striped electrode 27 is provided.
There will be no significant impact on As a result, charge rearrangement during reading
And the amount of positive charge Q + b distributed to the capacitor C * b
Relative to the case where the sub stripe electrode 27 is not provided.
Substripe power can be reduced accordingly.
Signal charge that can be extracted from the detector 20a via the pole 27
The amount is relative to the case where the sub-striped electrode 27 is not provided.
Can be increased. In the radiation solid state detector according to the present embodiment,
A pair of element 26a and element 27a
This period is set to 50 μm, and is preferable.
Set within the range of 10μm to 150μm
Therefore, the amount of stored charge that can be extracted can be increased.
Reading efficiency and image S / N can be improved.
The Next, a radiation solid state detector according to the present invention is described.
A second embodiment will be described with reference to FIG. FIG.
Is a sectional view of a radiation solid state detector 20b according to the present embodiment.
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20b has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, the reading light is used.
The thickness of the conductive layer 24 is 30 μm, and the element 26a
And the width of the element 27a is 30 μm, adjacent elements
The width between the terminals is 20 μm, that is, the period is 100 μm.
ing. Also, the pixel pitch is 100 μm, and it is for one pixel
The electrode is composed of a pair of elements. Also in this embodiment, the period is set to 100 μm.
m, a preferred range of 10 μm to 150 μm
Since it is set within the range, the same effect as the first embodiment
It is possible to obtain Next, the radiation solid state detector according to the present invention
A third embodiment will be described with reference to FIG. FIG.
Is a sectional view of a radiation solid state detector 20c according to the present embodiment.
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20c has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 10 μm, and the element 26a
And the element 27a has a width of 15 μm and adjacent elements
The width between the terminals is 10 μm, that is, the period is 50 μm.
Yes. Also, the pixel pitch is 100 μm and the power for one pixel is set.
The pole is composed of two pairs of elements. Also in this embodiment, the period is 50 μm.
The preferred range is 10 μm to 150 μm.
Since it is set within the range, the same effect as the first embodiment is obtained.
It is possible to obtain. Next, the radiation solid state detector according to the present invention
The fourth embodiment will be described with reference to FIG. FIG.
Is a sectional view of a radiation solid state detector 20d according to the present embodiment.
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20d has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 5 μm, and the element 26a and
Element 27a has a width of 7.5 μm and adjacent elements
The width between the terminals is 5 μm, that is, the period is 25 μm.
The The pixel pitch is 100 μm, and the electrode for one pixel
Is composed of four pairs of elements. Also in this embodiment, the cycle is 25 μm.
The preferred range is 10 μm to 150 μm.
Since it is set within the range, the same effect as the first embodiment is obtained.
It is possible to obtain. Next, the radiation solid state detector according to the present invention
Embodiment 5 will be described with reference to FIG. FIG.
Is a cross-sectional view of a radiation solid state detector 20e according to the present embodiment
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20e has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 5 μm, and the element 26a and
Element 27a has a width of 7.5 μm and adjacent elements
The width between the terminals is 5 μm, that is, the period is 25 μm.
The The pixel pitch is 100 μm and every 3 pairs
3 pairs of electrodes for 1 pixel by placing them at an interval of 1 pair
It consists of a pair of elements. Also in this embodiment, the cycle is 25 μm.
The preferred range is 10 μm to 150 μm.
Since it is set within the range, the same effect as the first embodiment is obtained.
It is possible to obtain. Next, the radiation solid state detector according to the present invention
A sixth embodiment will be described with reference to FIG. FIG.
Is a sectional view of the radiation solid state detector 20f according to the present embodiment.
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20f has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 10 μm, and the element 26a
And the element 27a has a width of 15 μm and adjacent elements
The width between the terminals is 10 μm, that is, the period is 50 μm.
Yes. Also, the pixel pitch is 150 μm and the power for one pixel is set.
The pole is composed of three pairs of elements. Also in this embodiment, the period is 50 μm.
The preferred range is 10 μm to 150 μm.
Since it is set within the range, the same effect as the first embodiment is obtained.
It is possible to obtain. Next, the radiation solid state detector according to the present invention will be described.
The seventh embodiment will be described with reference to FIG. FIG.
Is a sectional view of a radiation solid state detector 20g according to the present embodiment.
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20g has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 10 μm, and the element 26a
And the width of the element 27a is 45 μm, adjacent elements
The width between the terminals is 30 μm, that is, the period is 150 μm.
ing. The pixel pitch is 150 μm, and it is for one pixel.
The electrode is composed of a pair of elements. In this detector 20g, recording is performed.
Power storage unit that is an interface between the photoconductive layer 22 and the charge transport layer 23
29, a number of discrete rectangular microplates
Between the adjacent microplates 28).
At an interval, element 26a and element 27
Arranged just above the pair of a. This micro play
The length of each side of the groove 28 is substantially the same as the above cycle (adjacent
Slightly smaller to provide space for the ichroplate
That is, almost the same as the smallest resolvable pixel pitch.
The dimensions are set. Arrangement of microplate 28
This position becomes the pixel position on the detector. Also in this embodiment, the period is 150 μm.
m, a preferred range of 10 μm to 150 μm
Since it is set within the range, the same effect as the first embodiment
It is possible to obtain Next, a radiation solid state detector according to the present invention is described.
An eighth embodiment will be described with reference to FIG. FIG.
Is a sectional view of a radiation solid state detector 20h according to the present embodiment
It is. In this figure, the support 18 and the insulating layer
30 and the light shielding film 31 are omitted. In addition, in FIG.
The detector 20 according to the first embodiment shown in FIG.
Elements that are the same as element a are given the same numbers, and
All explanations are omitted unless otherwise required. The radiation solid detector 20h has a first conductive property.
Layer 21, recording photoconductive layer 22, charge transport layer 23, for reading
Photoconductive layer 24, stripe electrode 26, and sub strike
A second conductive layer 25 having a positive electrode 27, an insulating layer 30, and a support
The body 18 is arranged in this order. Also support
18 on each element 27a and 26a
A light shielding film 31 is provided at a portion corresponding to the element 27a.
Is provided. Each layer has a test according to the first embodiment.
The same thing as the unloader 20a is used. In this embodiment, reading light is used.
The thickness of the conductive layer 24 is 30 μm, and the element 26a
And the width of the element 27a is 30 μm, adjacent elements
The width between the terminals is 20 μm, that is, the period is 100 μm.
ing. The pixel pitch is 200 μm, and it is for one pixel.
The electrode is composed of two pairs of elements. Also in this embodiment, the period is set to 100 μm.
m, a preferred range of 10 μm to 150 μm
Since it is set within the range, the same effect as the first embodiment
It is possible to obtain The preferred embodiments of the radiation solid detector according to the present invention have been described above.
Although preferred embodiments have been described, the present invention is
It is not limited to the embodiments, but changes the gist of the invention
As long as it is not, various changes can be made. For example, the detector according to the above embodiment is
In both cases, the recording photoconductive layer is exposed to recording radiation.
The detector according to the present invention is electrically conductive.
The recording photoconductive layer is not necessarily limited to this.
The recording photoconductive layer is not excited by the recording radiation.
As a thing that exhibits conductivity by irradiation of emitted light
(Refer to JP 2000-105297 A). This
In this case, the recording radiation is applied to the surface of the first conductive layer, for example,
So-called X for wavelength conversion to light in other wavelength regions such as blue light
A layered wavelength conversion layer called a line scintillator
Good. As this wavelength conversion layer, for example, iodine iodide is used.
It is preferable to use Cium (CsI) or the like. The second
One conductive layer is a wavelength conversion layer by excitation of recording radiation.
It shall be transparent to the emitted light. In addition, the detector 20a according to the above-described embodiment.
˜g is a charge between the recording photoconductive layer and the reading photoconductive layer.
A transport layer is provided at the interface between the recording photoconductive layer and the charge transport layer.
It is intended to form a power storage unit, but it is a charge transport layer
May be replaced with a trap layer. trap
In the case of a layer, the latent image charge is trapped in the trap layer.
The trap layer or the trap layer and the recording photoconductive layer
The latent image charge is accumulated at the interface. Also this trap layer
And a microphone at the interface of the recording photoconductive layer.
A roplate may be provided.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view (A) of a radiation solid state detector according to a first embodiment of the present invention, an XZ sectional view (Q) of an arrow Q part, and P
FIG. 2 is a cross-sectional view of the radiation solid detector according to the first embodiment of the present invention. FIG. 3 is a cross-section of the radiation solid detector according to the second embodiment of the present invention. FIG. 4 is a sectional view of a radiation solid state detector according to a third embodiment of the present invention. FIG. 5 is a sectional view of a radiation solid state detector according to the fourth embodiment of the present invention. FIG. 7 is a sectional view of a radiation solid state detector according to the fifth embodiment. FIG. 7 is a sectional view of a radiation solid state detector according to the sixth embodiment of the present invention. FIG. 8 is a radiation diagram according to the seventh embodiment of the present invention. FIG. 9 is a sectional view of a radiation solid state detector according to an eighth embodiment of the present invention. DESCRIPTION OF SYMBOLS 20a to 20h Radiation solid state detector 21 First conductive layer 22 Photoconductive layer for recording 23 charge transport layer 24 photoconductive layer for reading 25 second conductive layer 26 stripe electrode 6a element (photoelectric charge pair generating line electrodes) 27 sub stripe electrode 27a element (photoelectric charge pair non-generating line electrodes) 28 microplates 29 power storage unit

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2G088 EE01 GG21 JJ31                 4M118 AB01 BA05 CA14 CA31 CB05                       FB03 FB09 GB02 GB11                 5C024 AX16 AX17 GX07                 5F088 AA11 AB05 BA02 BA16 BB07                       HA10 LA07 LA08

Claims (1)

1. A first conductive layer that is transmissive to recording light, a recording photoconductive layer that exhibits photoconductivity when irradiated with the recording light, and the recording A power storage unit that accumulates a charge corresponding to the amount of light as a latent image charge, a reading photoconductive layer that exhibits photoconductivity when irradiated with reading light, and is transparent to the reading light A large number of photoelectric charge pair generating linear electrodes, and a large number of photoelectric charge pair non-generating linear electrodes,
In the radiation solid detector comprising the second conductive layer in which the photocharge pair generating linear electrodes and the photocharge pair non-generating linear electrodes are alternately arranged in this order, the photocharge pair generation A radiation solid state detector, wherein a period of a pair of a linear electrode and the non-generating linear electrode is set in a range of 10 μm to 150 μm.