JP2005294752A - Solid-state radiation detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce crosstalk in a linear electrode longitudinal direction in a solid-state radiation detector provided with a sub-stripe electrode. <P>SOLUTION: The solid-state radiation detector 20 is provided with a first conductive layer 21, a recording photoconductive layer 22, a charge transport layer 23, a reading photoconductive layer 24, and a second photoconductive layer 25 having a stripe electrode 26 formed of a plurality of linear elements 26a and the sub-stripe electrode 27 formed of a plurality of linear elements 27a. When a crossed axes angle in a direction of lamination of the elements 26a and 27a is set to be θ, the crossed axes angle θ is set to be 45°, and an intersection position is set to be the center of a pixel. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a radiation solid-state detector having a power storage unit that accumulates, as a latent image charge, an amount of charge corresponding to the dose of irradiated radiation or the amount of light emitted by excitation of the radiation.

  Today, in radiography for medical diagnosis and the like, charges obtained by detecting radiation are temporarily stored as latent image charges in a power storage unit, and the stored latent image charges are converted into electrical signals representing radiation image information. Various radiation image information recording / reading apparatuses using a radiation solid state detector (hereinafter also simply referred to as a detector) have been proposed. Various types of solid-state radiation detectors used in this apparatus have been proposed. From the viewpoint of a charge reading process for reading out the accumulated charges to the outside, reading light (electromagnetic waves for reading) is applied to the detector. There is an optical readout type that reads out by irradiating.

  The present applicant has disclosed, in Patent Document 1, Patent Document 2, and Patent Document 3, as an optical readout radiation solid state detector capable of achieving both high-speed readout response and efficient signal charge extraction. A first conductive layer that is transparent to the radiation of light or light emitted by excitation of the radiation (hereinafter referred to as recording light), a recording photoconductive layer that exhibits conductivity by receiving recording light, and a first conductive layer A charge transport layer that acts as a substantially insulator for charges of the same polarity as the charge to be charged, and acts as a conductor for charges of the opposite polarity to the same polarity. Is formed at the interface between the recording photoconductive layer and the charge transport layer by laminating in this order a reading photoconductive layer that exhibits conductivity by receiving light and a second conductive layer that is transparent to the reading light. Image information to the storage unit The latent image charges to have proposed a detector for accumulating (electrostatic latent image).

  In Patent Document 2 and Patent Document 3, particularly, the electrode of the second conductive layer that is transparent to the reading light is composed of the charge detection linear electrode that is transparent to the large number of reading light. In addition to the stripe electrodes, a large number of auxiliary linear electrodes for outputting an electric signal at a level corresponding to the amount of latent image charges accumulated in the power storage unit are alternately and parallel to the charge detection linear electrodes. Thus, a detector provided in the second conductive layer is proposed.

As described above, by providing the sub-stripe electrode composed of a large number of auxiliary linear electrodes in the second conductive layer, a new capacitor is formed between the power storage unit and the sub-striped electrode, and is stored in the power storage unit by the recording light. The transport charge having the opposite polarity to the latent image charge thus made can be charged also to the sub-stripe electrode by charge rearrangement at the time of reading. As a result, the amount of the transport charge distributed to the capacitor formed between the stripe electrode and the power storage unit via the reading photoconductive layer is made relatively smaller than in the case where this sub-stripe electrode is not provided. As a result, it is possible to increase the amount of signal charge that can be taken out from the detector to improve the reading efficiency, and to achieve both high-speed reading response and efficient signal charge extraction. It has become.
JP 2000-105297 A Japanese Patent Laid-Open No. 2000-2826a56 JP 2000-2826a57

  By the way, when an electrostatic latent image is read from a detector having a stripe electrode and a sub-stripe electrode as described in Patent Document 2 and Patent Document 3, the direction is usually orthogonal to the longitudinal direction of the linear electrode ( Scanning is performed in the longitudinal direction (sub-scanning direction) of the linear electrode with linear reading light extending in the main scanning direction). At this time, the reading light is irradiated in the longitudinal direction (sub-scanning direction) of the linear electrode. If the reading light is incident on the pixel area adjacent to the read pixel, the signal of the adjacent pixel is mixed into the signal of the read pixel, that is, the crosstalk occurs, and is recorded. The electrostatic latent image cannot be read accurately.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to reduce crosstalk in the longitudinal direction of a linear electrode in a radiation solid detector having a sub-striped electrode.

  The radiation solid state detector according to the present invention includes a first conductive layer that is transmissive to recording light, a recording photoconductive layer that exhibits photoconductivity when irradiated with recording light, and the amount of recording light. A power storage unit that accumulates a corresponding amount of charge as a latent image charge, a photoconductive layer for reading that exhibits photoconductivity when irradiated with reading light, a plurality of linear electrodes for charge detection, and a plurality of auxiliary lines In the radiation solid detector formed by laminating the second conductive layer having the electrode shape in this order, the crossing angle of the charge detection linear electrode and the auxiliary linear electrode viewed from the direction of the lamination is θ. Then, the crossing angle θ is arranged so as to cross so that 0 ° <θ <90 °.

  Here, the “recording light” is an electromagnetic wave carrying image information, which can be recorded as a latent image charge (electrostatic latent image) by irradiating the solid state detector with the solid state detector. Any device may be used as long as it is, for example, light, radiation, or the like may be used.

  The “reading light” may be any electromagnetic wave that can generate a current corresponding to the latent image charge (electrostatic latent image) recorded in the image detector by irradiating the image detector. For example, light or radiation may be used.

  The “charge detecting linear electrode” is an electrode for detecting a charge pair generated in the reading photoconductive layer. In order to make the reading light enter the reading photoconductive layer, However, if a sufficient amount of charge pairs can be generated in the reading photoconductive layer by the reading light incident between the linear electrodes, the charge detecting linear electrode is not necessarily transparent. There is no need to have.

  Further, the “auxiliary linear electrode” is an electrode for outputting an electric signal of a level corresponding to the amount of latent image charge accumulated in the power storage unit, and desirably has a light shielding property against the reading light. However, when a light-shielding film having a light shielding property is provided between the auxiliary linear electrode and the reading light irradiation means, the auxiliary linear electrode does not necessarily have a light shielding property. Here, the “light-shielding property” is not limited to the one in which the reading light is completely blocked and no charge pair is generated. Including those that do not cause any substantial problems. Therefore, all the charge pairs generated in the reading photoconductive layer are not necessarily due to the reading light transmitted through the charge detecting linear electrodes or the reading light incident between the linear electrodes. It is assumed that charge pairs can be generated in the reading photoconductive layer even by the transmitted reading light.

  When recording or reading a radiation image using the solid state detector according to the present invention, for example, recording using a conventional solid state detector to which the present invention is not applied as described in Patent Document 2 above. The method, the reading method, and the apparatus can be used as they are without changing.

  In the radiation solid state detector according to the present invention, the crossing angle θ is preferably 30 ° <θ <60 °, and more preferably 45 °.

  Further, in each of the pixels set in a plurality in the longitudinal direction of either the linear electrode for charge detection or the auxiliary linear electrode, the linear electrode for charge detection and the auxiliary linear electrode are each a pixel. It is preferable that the three-dimensional intersection is formed at the center of each.

  Furthermore, the auxiliary linear electrode is preferably arranged on the first conductive layer side with respect to the charge detection linear electrode in the stacking direction.

  According to the radiation solid state detector according to the present invention, the first conductive layer that is transmissive to the recording light, the recording photoconductive layer that exhibits photoconductivity by being irradiated with the recording light, and the recording light A power storage unit that accumulates a charge corresponding to the amount of light as a latent image charge, a reading photoconductive layer that exhibits photoconductivity when irradiated with reading light, a plurality of linear electrodes for charge detection, In the radiation solid state detector formed by laminating the second conductive layer including the auxiliary linear electrode in this order, the crossing angle of the charge detecting linear electrode and the auxiliary linear electrode when viewed from the direction of the lamination is set. In the longitudinal direction of one of the linear electrodes connecting the current detection amplifier for detecting the latent image charge, the crossing angle θ is arranged so that the crossing angle θ satisfies 0 ° <θ <90 °. Latent images are recorded in a concentrated manner at the crossing pitch with the other linear electrode. Therefore, even when the reading light is incident on the pixel area adjacent to the reading pixel where the reading light is irradiated to the one linear electrode to which the current detection amplifier is connected, Since there is little latent image charge and the signal of the adjacent pixel mixed in the signal of the read pixel is reduced, the crosstalk of the signal between the pixels can be reduced.

  Further, by setting the crossing angle θ to 45 °, the pixel pitch in the main scanning direction (direction perpendicular to the longitudinal direction of the linear electrodes) and the pixel pitch in the sub-scanning direction (longitudinal direction of the linear electrodes) are made equal. Even in this case, since the arrangement shapes of the charge detection linear electrodes and the auxiliary linear electrodes in each pixel are equal, and the recording conditions of each pixel can be made uniform, the occurrence of artifacts can be prevented.

  Further, in each of the pixels set in a plurality in the longitudinal direction of either the linear electrode for charge detection or the auxiliary linear electrode, the linear electrode for charge detection and the auxiliary linear electrode are provided as pixels. Since the latent image is hardly recorded near the boundary with the adjacent pixels and the signal of the adjacent pixels mixed in the read pixel signal is reduced by configuring the three-dimensional intersection at the center of the pixel. Signal crosstalk can be reduced.

  Further, by arranging the auxiliary linear electrode closer to the first conductive layer side than the linear electrode for charge detection in the stacking direction, that is, by arranging the linear electrode for charge detection on the incident light side of the reading light, Since the reading light incident on the radiation solid state detector at the time of reading can be efficiently applied to the linear electrode for charge detection, the detection efficiency of the latent image charge can be improved.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a first embodiment of a radiation solid detector according to the present invention. FIG. 1 (A) is a perspective view of a radiation solid detector 20, and FIG. 1 (B) is a radiation solid detection. FIG. 1C is an XY cross-sectional view of the P-arrow portion of the radiation solid detector 20. FIG. 2 is a top view for explaining the arrangement of the conductive members (microplates).

  The radiation solid detector 20 includes a first conductive layer 21 that is transmissive to recording light (radiation or light generated by excitation of radiation) that carries image information of radiation such as X-rays transmitted through a subject, A recording photoconductive layer 22 that generates conductivity by receiving irradiation of recording light transmitted through the first conductive layer 21 and exhibits conductivity, and a latent image polar charge (for example, negative charge) in the charge pair. Is a charge transport layer 23 that acts as a substantially conductive material for a transport polarity charge (positive charge in the above example) having a polarity opposite to that of the latent image polar charge. A photoconductive layer 24 for reading which generates electric charge pairs by receiving and exhibits conductivity, a second conductive layer 25 including a stripe electrode 26 and a sub-striped electrode 27, and a support 18 which is transparent to reading light. Arranged in this order It is made of Te. At the interface between the recording photoconductive layer 22 and the charge transport layer 23, there is formed a two-dimensionally distributed power storage unit 29 for accumulating latent image polar charges carrying image information generated in the recording photoconductive layer 22. Is done.

As the support 18, a glass substrate that is transparent to the reading light can be used. In addition to being transparent to the reading light, it is more desirable to use a material whose coefficient of thermal expansion is relatively close to that of the reading photoconductive layer 24. For example, if a-Se (amorphous selenium) is used as the reading photoconductive layer 24, considering that the thermal expansion coefficient of Se is 3.68 × 10 ⁻⁵ / K @ 26a ° C., A material having a coefficient of thermal expansion of 1.0 to 10.0 × 10 ⁻⁵ / K @ 26a ° C., more preferably 26a to 8.0 × 10 ⁻⁵ / K @ 26a ° C. is used. An organic polymer material such as polycarbonate or polymethyl methacrylate (PMMA) can be used as the substance having a thermal expansion coefficient in this range. As a result, the thermal expansion of the support 18 as a substrate and the photoconductive layer 24 for reading (Se film) can be matched, and a large temperature cycle can be achieved in a special environment, for example, during ship transportation in a cold climate. Even if it is received, thermal stress is generated at the interface between the support 18 and the reading photoconductive layer 24, and the two are physically separated, the reading photoconductive layer 24 is broken, or the support 18 is cracked. The problem of destruction due to the difference does not occur. Furthermore, the organic polymer material has a merit that it is more resistant to impact than the glass substrate.

Examples of the material of the recording photoconductive layer 22 include lead (II) oxide such as a-Se (amorphous selenium), PbO, PbI ₂ , lead (II) iodide, Bi ₁₂ (Ge, Si) O ₂₀ , Bi _2. A photoconductive substance having at least one of I ₃ / organic polymer nanocomposite as a main component is suitable.

The substance of the charge transport layer 23, for example, a mobility of the negative charges charged on the first conductive layer 21, as good as the difference in the mobility of positive charge which becomes the opposite polarity is large (e.g., 10 ² or more, preferably 10 ³ or more) poly N-vinylcarbazole (PVK), N, N′-diphenyl-N, N′-bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD And organic compounds such as discotic liquid crystal, TPD polymer (polycarbonate, polystyrene, PUK) dispersion, and semiconductor materials such as a-Se doped with 10 to 200 ppm of Cl. In particular, organic compounds (PVK, TPD, discotic liquid crystal, etc.) are preferable because they have a light insensitivity, and since the dielectric constant is generally small, the capacitance of the charge transport layer 23 and the reading photoconductive layer 24 is reduced, and thus reading is performed. The signal extraction efficiency can be increased. Note that “having light insensitivity” means that the material hardly exhibits conductivity even when irradiated with recording light or reading light.

  Examples of the material of the reading photoconductive layer 24 include a-Se, Se-Te, Se-As-Te, metal-free phthalocyanine, metal phthalocyanine, MgPc (Magnesium phtalocyanine), VoPc (phase II of Vanadyl phthalocyanine), and CuPc (Cupper phtalocyanine). ) And the like, and a photoconductive substance mainly containing at least one of them is preferred.

  The thickness of the recording photoconductive layer 22 is preferably 50 μm or more and 1000 μm or less so that the recording light can be sufficiently absorbed.

  Further, the total thickness of the charge transport layer 23 and the reading photoconductive layer 24 is preferably less than or equal to ½ of the thickness of the recording photoconductive layer 22. Therefore, for example, it is preferably 1/10 or less, more preferably 1/100 or less. In the present embodiment, the thickness of the reading photoconductive layer 24 is 10 μm.

  The material of each of the above layers is a power storage formed at the interface between the recording photoconductive layer 22 and the charge transport layer 23 by charging the first conductive layer 21 with a negative charge and the second conductive layer 25 with a positive charge. The negative charge as the latent image polar charge is accumulated in the portion 29, and the charge transport layer 23 moves the positive charge as the transport polar charge having the opposite polarity to the mobility of the negative charge as the latent image polar charge. Although the degree is larger, it is an example of a suitable one that functions as a so-called hole transport layer, each of these may be a charge of opposite polarity, and when reversing the polarity in this way, It is only necessary to make a slight change such as changing the charge transport layer functioning as a hole transport layer to a charge transport layer functioning as an electron transport layer.

  For example, a photoconductive material such as the above-described amorphous selenium a-Se, lead (II) oxide, lead (II) iodide or the like can be used as the recording photoconductive layer 22, and N-trinitro as the charge transport layer 23. Fluorenylidene / aniline (TNFA) dielectric, trinitrofluorenone (TNF) / polyester dispersion, and asymmetric diphenoquinone derivatives are suitable, and the above-described metal-free phthalocyanine and metal phthalocyanine can be used as the photoconductive layer 24 for reading. .

The first conductive layer 21 may be any layer as long as it is transmissive to recording light. For example, when transmissive to visible light, a nesa film (SnO film) known as a light transmissive metal thin film is used. ₂ ) A metal oxide such as ITO (Indium Tin Oxide) or IDIXO (Idemitsu Indium X-metal Oxide; Idemitsu Kosan Co., Ltd.), which is an amorphous light transmissive oxide that is easy to etch, is about 50 to 200 nm thick, Preferably, it can be used with 100 nm or more. Further, by making a pure metal such as aluminum Al, gold Au, molybdenum Mo, and chromium Cr, for example, a thickness of 20 nm or less (preferably about 10 nm), transparency to visible light can be given. Note that when X-rays are used as recording light and an image is recorded by irradiating the X-rays from the first conductive layer 21 side, the first conductive layer 21 does not need to be transmissive to visible light. The first conductive layer 21 may be made of pure metal such as Al or Au having a thickness of 100 nm, for example.

  The second conductive layer 25 includes a stripe electrode 26 in which a large number of reading light transmitting elements (charge detecting linear electrodes) 26a are arranged in a stripe shape and a large number of reading light shielding elements (auxiliary linear electrodes). And a sub-striped electrode 27 formed by arranging 27a in a stripe shape.

  As shown in FIG. 2, the pixel pitch in the main scanning direction (direction orthogonal to the longitudinal direction of the element 27a) and the pixel pitch in the sub-scanning direction (longitudinal direction of the element 27a) are equal, and each element 26a, 27a is an element 27a. Is arranged on the first conductive layer 21 side, the crossing angle θ is 45 ° when the crossing angle seen from the direction of the lamination of both is θ, and the crossing position is the center of the pixel. Yes. The stripe electrode 26 and the sub stripe electrode 27 are electrically insulated. The sub-striped electrode 27 is a conductive material for outputting an electric signal of a level corresponding to the amount of latent image charge accumulated in the power storage unit 29 formed at a substantially interface between the recording photoconductive layer 22 and the charge transport layer 23. It is a member.

  In the present embodiment, a current reading amplifier (not shown) is connected to the element (auxiliary linear electrode) 27a, and the linear reading light source 50 extends in a direction (main scanning direction) orthogonal to the longitudinal direction of the element 27a. Scanning is performed along the longitudinal direction (sub-scanning direction) of the element 27a.

  Here, as a material of an electrode material forming each element 26a of the stripe electrode 26, ITO (Indium Tin Oxide), IDIXO (Idemitsu Indium X-metal Oxide; Idemitsu Kosan Co., Ltd.), aluminum, molybdenum, or the like is used. Can do. Further, as a material of an electrode material for forming each element 27a of the sub stripe electrode 27, aluminum, molybdenum, chromium, or the like can be used.

  In this detector 20, a capacitor C * a is formed between the first conductive layer 21 and the power storage unit 29 with the recording photoconductive layer 22 interposed therebetween, and the charge transport layer 23 and the reading photoconductive layer 24 are sandwiched therebetween. Thus, a capacitor C * b is formed between the power storage unit 29 and the stripe electrode 26 (element 26a), and the power storage unit 29 and the sub-striped electrode 27 (element 27a) are interposed via the read photoconductive layer 24 and the charge transport layer 23. Is formed with a capacitor C * c. The amount of positive charge Q + a, Q + b, Q + c distributed to each capacitor C * a, C * b, C * c during charge rearrangement at the time of reading is the sum of Q + and the amount Q− of latent image polar charge. In the same manner, the amounts are proportional to the capacitances Ca, Cb, and Cc of each capacitor. This can be expressed by the following formula.

Q- = Q + = Q + a + Q + b + Q + c
Q + a = Q + × Ca / (Ca + Cb + Cc)
Q + b = Q + × Cb / (Ca + Cb + Cc)
Q + c = Q + × Cc / (Ca + Cb + Cc)
The amount of signal charge that can be extracted from the detector 20 is the same as the sum of the positive charge amounts Q + a and Q + c (Q + a + Q + c) distributed to the capacitors C * a and C * c, and the positive charge distributed to the capacitor C * b. Cannot be taken out as signal charges (refer to Patent Document 2 for details).

  Here, considering the capacitances of the capacitors C * b and C * c by the stripe electrode 26 and the sub stripe electrode 27, the capacitance ratio Cb: Cc is the ratio Wb: Wc of the widths of the elements 26a and 27a. On the other hand, the capacitance Ca of the capacitor C * a and the capacitance Cb of the capacitor C * b are not substantially affected even if the sub-striped electrode 27 is provided.

  As a result, the amount of positive charge Q + b distributed to the capacitor C * b during charge rearrangement at the time of reading can be made relatively smaller than when the sub-striped electrode 27 is not provided. The amount of signal charge that can be extracted from the detector 20 via the sub-striped electrode 27 can be made relatively larger than when the sub-striped electrode 27 is not provided.

  The radiation solid state detector according to the present embodiment is configured such that the crossing angle θ is 45 ° when the crossing angle in the stacking direction of the elements 26a and 27a is θ, and the crossing position is the center of the pixel. Therefore, for each pixel, the latent image charge is concentrated and recorded in the vicinity of the center of the pixel, and only a small amount of latent image charge is recorded in the vicinity of the boundary between the pixels. Even when the reading light is incident on the adjacent pixel area, there is little latent image charge near the boundary of each pixel, and the adjacent pixel signal mixed in the read pixel signal is reduced. Signal crosstalk can be reduced.

  Since the crossing angle θ is 45 °, even when the pixel pitch in the main scanning direction and the pixel pitch in the sub-scanning direction are made equal, the arrangement shapes of the elements 26a and 27a in each pixel are the same, and recording of each pixel is performed. Since the conditions can be made uniform, the occurrence of artifacts can be prevented.

  In addition, by arranging the element 27a on the first conductive layer 21 side and the element 26a on the reading light incident surface side, the reading light incident on the radiation solid state detector 20 at the time of reading can be efficiently transmitted to the element (charge detection). The linear electrode) 26a can be irradiated, so that the detection efficiency of the latent image charge can be improved.

  The preferred embodiments of the radiation solid state detector according to the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without changing the gist of the invention. is there.

  For example, the crossing angle θ in the stacking direction of the elements 26a and 27a may be any angle as long as 0 ° <θ <90 °.

  In the detector according to the above-described embodiment, the recording photoconductive layer exhibits conductivity when irradiated with the recording radiation. However, the recording photoconductive layer of the detector according to the present invention is not necessarily limited thereto. Instead, the recording photoconductive layer may exhibit conductivity when irradiated with light emitted by excitation of recording radiation (see Patent Document 1). In this case, a wavelength conversion layer called a so-called X-ray scintillator that converts the wavelength of recording radiation into light of another wavelength region such as blue light may be laminated on the surface of the first conductive layer. As this wavelength conversion layer, for example, cesium iodide (CsI) is preferably used. The first conductive layer is transmissive to light emitted from the wavelength conversion layer by excitation of recording radiation.

  Furthermore, the detector according to the above embodiment provides a charge transport layer between the recording photoconductive layer and the reading photoconductive layer, and forms a power storage unit at the interface between the recording photoconductive layer and the charge transport layer. However, the charge transport layer may be replaced with a trap layer. In the case of the trap layer, the latent image charge is trapped in the trap layer, and the latent image charge is accumulated in the trap layer or at the interface between the trap layer and the recording photoconductive layer. In addition, a microplate may be provided for each pixel at the interface between the trap layer and the recording photoconductive layer.

The perspective view (A) of the radiation solid detector by the 1st Embodiment of this invention, XZ sectional drawing (B) of Q arrow finger part, XY sectional drawing (C) of P arrow finger part The top view explaining arrangement of each element of the radiation solid detector

Explanation of symbols

20 Radiation Solid Detector 21 First Conductive Layer 22 Recording Photoconductive Layer 23 Charge Transport Layer 24 Reading Photoconductive Layer 25 Second Conductive Layer 26 Stripe Electrode 26a Element (Linear Electrode for Charge Detection)
27 Sub-striped electrode 27a Element (auxiliary linear electrode)
29 Power storage unit

Claims (4)

A first conductive layer that is transparent to the recording light;
A photoconductive layer for recording that exhibits photoconductivity by being irradiated with the recording light;
A power storage unit that accumulates an amount of charge corresponding to the amount of the recording light as a latent image charge;
A photoconductive layer for reading that exhibits photoconductivity by receiving irradiation of reading light;
In the radiation solid detector formed by laminating a plurality of charge detecting linear electrodes and a second conductive layer including a plurality of auxiliary linear electrodes in this order,
The charge detection linear electrode and the auxiliary linear electrode are arranged so as to intersect such that the intersection angle θ is 0 ° <θ <90 °, where θ is the intersection angle viewed from the stacking direction. A radiation solid state detector characterized by being provided.   The radiation solid state detector according to claim 1, wherein the crossing angle θ is 45 °. In each of the pixels set in a plurality in the longitudinal direction of either one of the linear electrode for charge detection or the auxiliary linear electrode,
The radiation solid-state detector according to claim 1, wherein the charge detection linear electrode and the auxiliary linear electrode are configured to three-dimensionally intersect at the center of a pixel.   4. The auxiliary linear electrode according to claim 1, wherein the auxiliary linear electrode is disposed closer to the first conductive layer side than the charge detecting linear electrode in the stacking direction. Radiation solid state detector.

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