JP2003086512A - Vacuum processing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high-quality products by restraining a rise in temperature in a film forming chamber and eliminating negative effects of heat on the quality of products and on components in the film-forming chamber. SOLUTION: A heater cover 35 for supporting a substrate K to be subjected to film forming is provided in the opposite position of a ladder electrode 33 placed in a film forming chamber. The heater cover 35 is provided with a substrate heater 36 on its back. The substrate heater 36 is composed of several bar-shape cartridge heaters 44 in for heating the substrate K via the heater cover 35 in the process of treating the substrate K. The heater cover 35 is also provided with a cooling mechanism 61 on its back. The cooling mechanism 61 is ringed with cooling tubes 62 each of which has a rectangular section and through which cooling medium is made to flow.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus such as a plasma CVD apparatus or a dry etching apparatus used when manufacturing a semiconductor such as a silicon solar cell.

[0002]

2. Description of the Related Art Conventionally, as a vacuum processing apparatus for forming a film on a substrate, a plasma CVD apparatus, a sputtering apparatus, a dry etching apparatus, etc. have been known. In particular,
A plasma CVD apparatus is used as an apparatus for forming a film when a semiconductor such as a silicon solar cell is manufactured. This type of vacuum processing apparatus will be described by taking the plasma CVD apparatus shown in FIGS. 9 and 10 as an example. In the figure, reference numeral 11 is a plasma CVD apparatus (plasma processing apparatus). The plasma CVD apparatus 11 includes a film forming unit 14 in which ladder electrodes 13 are provided on both side surfaces of a vacuum chamber 12 forming a film forming chamber (plasma processing chamber) 10 whose pressure is reduced by a vacuum pump (not shown). Substrate heaters 16 are provided on both side surfaces of the film forming unit 14 with a heater cover 15 interposed therebetween.

A temperature control heater or heat sink 21 is provided at the center of the film forming unit 14, and the ladder electrodes 13 are provided on both sides of the temperature control heater or heat sink 21 with deposition preventive plates 22 interposed therebetween. Is provided, and the outer periphery is surrounded by an exhaust cover 23 having an opening at a portion facing the ladder electrode 13.

The heater cover 15 is a substrate heating heater 16.
The substrate K, which is a base material for film formation, is supported between the film forming unit 14 and the film forming unit 14 by the drive mechanism 24 in the direction of approaching and separating from the film forming unit 14. Since the heater cover 15 is close to the film forming unit 14, the substrate K is arranged in the opening portion of the exhaust cover 23.

In the plasma CVD apparatus 11, the pressure inside the vacuum chamber 12 is reduced and SiH ₄
When a film-forming gas, which is a processing raw material gas including a raw material gas consisting of the following, is fed and a high-frequency current is supplied to the ladder electrode 13, plasma is generated in the vacuum chamber 11 and the substrate heated by the substrate heater 16 is heated. A film is formed on K.

As the plasma CVD apparatus 11, as shown in Japanese Patent Laid-Open No. 10-102261, a mesh heater that heats plasma to accelerate film formation is provided separately from the substrate heating heater 16 and the ladder electrode 13. There is also one provided between the substrate and the substrate.

Further, this type of plasma CVD apparatus 11
Then, by periodically introducing a fluorine-based gas such as NF ₃ gas into the film forming chamber 10 to generate plasma,
Fluorine radicals are generated in the film forming chamber 10, and the fluorine radicals react with the attached Si-based film to produce SiF ₄
There is also known one having a self-cleaning function of removing deposits made of Si-based film or powder adhered to the inner surface of the film forming chamber 10 or the surfaces of the members in the film forming chamber 10 by discharging the gas to the outside. There is.

[0008]

By the way, in recent years,
It is required to increase the size of the product manufactured by the plasma CVD apparatus 11 having the above structure. Therefore, the large-sized substrate K is required.
A large-sized plasma CVD apparatus for forming a film on the substrate has been developed. In particular, when the apparatus becomes large in size as described above, when the mesh heater for plasma heating is used, the heat of the mesh heater raises the temperature of the substrate K higher than the specified temperature, and the NF ₃ gas When performing self-cleaning in which a reaction gas is introduced to generate plasma to react and remove Si-based deposits, the reaction heat during self-cleaning raises the temperature of the members in the film forming chamber 10 and causes corrosion. There was a risk that the problem would be accelerated.

Further, when the heat sink 21 is installed in the center of the apparatus, since the heat sink 21 is a large apparatus, the deposition preventive plate 22 and the exhaust cover 23 arranged between the film forming unit 12 and the heat sink 21 interfere. However, there is a possibility that a problem that the cooling capacity is not fully exerted may occur.

The present invention has been made in view of the above circumstances, and suppresses an increase in temperature in the film forming chamber, eliminates adverse effects on the product quality and members in the film forming chamber due to heat, and obtains a high quality product. It is an object of the present invention to provide a vacuum processing apparatus that is capable of performing the above-mentioned processing and is suppressed in deterioration.

[0011]

In order to achieve the above object, a vacuum processing apparatus according to a first aspect of the present invention includes a substrate to be subjected to substrate processing such as film formation in a film forming chamber in a reduced pressure environment. A vacuum processing apparatus having a plate-shaped heater cover supported on the front surface, and a substrate heating heater provided on the back surface side of the heater cover along the surface direction and heating the substrate through the heater cover during substrate processing. The heater cover is provided on its back surface with a cooling mechanism for cooling the heater cover.

That is, since the heater cover is heated by the substrate heater to heat the substrate, a cooling mechanism is provided on the back side of the heater cover to cool the heater cover. Even in a large-sized apparatus, the temperature in the film forming chamber as well as the substrate can be lowered. Therefore, when a mesh heater for heating plasma is used, the substrate is kept at a specified temperature suitable for film formation. Can also be made by plasma
Even when the temperature rises due to the reaction heat generated during the self-cleaning for reacting and removing the deposits, it is possible to prevent the corrosion of the members in the film forming chamber due to the temperature rise. In other words, it is possible to obtain a high-quality product while suppressing the excessive temperature rise, eliminating the adverse effects of heat on the product quality and the members in the film forming chamber, and suppressing the deterioration of the apparatus.

A vacuum processing apparatus according to a second aspect is the first aspect.
In the vacuum processing apparatus described above, the cooling mechanism has a cooling pipe which is provided along the back surface of the heater cover and through which a cooling medium is passed.

As described above, the cooling medium is caused to flow in the cooling pipe which is stretched around the back surface of the heater cover,
The temperature of the heater cover can be reduced extremely easily and uniformly, and the adverse effect of an excessive temperature rise of the substrate and the members in the film forming chamber can be prevented.

A vacuum processing apparatus according to a third aspect is the second aspect.
In the vacuum processing apparatus described above, one end of the cooling pipe is arranged in a central portion of the heater cover, and the cooling medium is supplied from one end arranged in the central portion of the heater cover.

That is, the cooling medium is supplied from one end of the cooling pipe to the central portion of the heater cover which is less likely to be cooled because the amount of heat conduction to the peripheral structure is smaller than that of the peripheral portion of the heat cover. The cover can be cooled uniformly.

A vacuum processing apparatus according to a fourth aspect is the second aspect.
Alternatively, in the vacuum processing apparatus according to claim 3, flexible tubes that are flexible and are drawn to the outside of a vacuum chamber that forms the film forming chamber are connected to both ends of the cooling tube. I am trying.

As described above, since both ends of the cooling pipe provided on the back surface side of the heater cover are connected to the flexible pipes drawn out of the vacuum chamber, in order to bring the substrate close to and away from the electrode. It is suitable for a structure in which the heater cover moves.

The vacuum processing apparatus according to claim 5 is the same as that according to claim 2.
The vacuum processing apparatus according to any one of claims 1 to 4, wherein the substrate heating heaters are rod-shaped cartridge heaters arranged in parallel, and the cooling pipe has a portion along the longitudinal direction of the cartridge heaters in plan view. Is arranged between the cartridge heaters.

That is, since the cooling pipe is arranged between the rod-shaped cartridge heaters, the heating by the cartridge heater and the cooling by the cooling pipe can be performed well, and the temperature of the substrate can be accurately controlled. Can improve the quality of the product.

A vacuum processing apparatus according to a sixth aspect is the second aspect.
The vacuum processing apparatus according to any one of claims 1 to 5, wherein the cooling pipe is fixed to the back surface of the heater cover, and the heater cover is directly cooled by the cooling pipe.

That is, since the heater cover is directly cooled by the cooling pipe, the heater cover can be cooled with good cooling efficiency.

A vacuum processing apparatus according to a seventh aspect is the sixth aspect.
In the vacuum processing apparatus described above, the cooling pipe is pressed and fixed to the heater cover by a plurality of fasteners.

As described above, since the cooling pipe is pressed against the heater cover by the fastener, the heat transfer coefficient between the heater cover and the cooling pipe can be increased, and thus,
Further, the heater cover can be cooled with good cooling efficiency.

The vacuum processing apparatus according to claim 8 is the same as claim 6.
Alternatively, in the vacuum processing apparatus according to claim 7, the cooling pipe is formed in a rectangular cross section.

That is, since the cooling pipe is formed in a rectangular cross section, it can be brought into contact with the heater cover with a large contact area, and thus the amount of heat transfer between the heater cover and the cooling pipe can be increased. As a result, the heater cover can be further cooled with good cooling efficiency.

A vacuum processing apparatus according to a ninth aspect is the sixth aspect.
The vacuum processing apparatus according to any one of items 1 to 8, wherein the contact surface between the heater cover and the cooling pipe is roughened.

That is, since the contact surface between the heater cover and the cooling pipe is roughened, it is possible to increase the heat transfer coefficient between the heater cover and the cooling pipe under a low pressure environment. The heater cover can be cooled with good cooling efficiency.

A vacuum processing apparatus according to a tenth aspect is the vacuum processing apparatus according to any one of the second to fifth aspects, wherein the cooling pipe is fixed to a soaking plate provided on the back surface of the heater cover. The heater cover is cooled by the cooling pipe via the soaking plate.

As described above, since the cooling pipe is provided on the back surface side of the heater cover via the heat equalizing plate, the heater cover can be evenly cooled by the cooling pipe.

The vacuum processing apparatus according to an eleventh aspect is the vacuum processing apparatus according to the tenth aspect, characterized in that a plurality of the heat equalizing plates are arranged with a slight gap therebetween.

That is, by using a plurality of soaking plates, the amount of thermal expansion of each soaking plate is reduced, and by further providing each soaking plate with a slight gap therebetween, mutual expansion due to thermal expansion is caused. It is possible to prevent interference between the heat equalizing plates.

A vacuum processing apparatus according to a twelfth aspect is the vacuum processing apparatus according to the tenth or eleventh aspect, wherein a plurality of mounting holes are formed in the heat equalizing plate, and the heat equalizing plate is
The mounting holes are fixed to the heater cover by screws that are inserted into the mounting holes and screwed into the heater cover. One of the mounting holes is a standard mounting hole, and the other mounting holes are the standard mounting holes. On the other hand, it is characterized in that it is formed in a long hole or a large diameter having a margin in the direction of displacement due to thermal expansion of the heat equalizing plate.

As described above, since the other mounting holes are formed as long holes or large diameters with a margin in the direction of displacement due to thermal expansion of the heat equalizing plate, with respect to the standard mounting holes. Displacement of the heat equalizing plate can be absorbed at a mounting position in the mounting hole other than the hole, and thus, deformation in a direction orthogonal to the surface of the heat equalizing plate can be reliably prevented.

A vacuum processing apparatus according to a thirteenth aspect is the vacuum processing apparatus according to any one of the tenth to twelfth aspects, wherein the peripheral edge of the soaking plate is circumferentially spaced and deformed by thermal stress. It is characterized in that a plurality of slits for preventing the above are formed.

That is, a plurality of slits formed in the peripheral edge of the heat equalizing plate at intervals in the circumferential direction are orthogonal to the surface due to the difference in thermal expansion amount due to the temperature difference between the center and the periphery of the heat equalizing plate. It is possible to reliably prevent the deformation in the direction.

A vacuum processing apparatus according to a fourteenth aspect is the vacuum processing apparatus according to any one of the tenth to thirteenth aspects, wherein the cooling pipe is pressed against the soaking plate by a plurality of fasteners. It is characterized by being fixed.

That is, even if the positional relationship between the cooling pipe and the heat equalizing plate is deviated due to the difference in thermal expansion amount due to the temperature difference between the cooling pipe and the heat equalizing plate, the cooling pipe is pressed against the heat equalizing plate by the fastener. Therefore, the heat transfer coefficient between the heat equalizing plate and the cooling pipe can be increased, and thereby the heater cover can be cooled through the heat equalizing plate with good cooling efficiency.

A vacuum processing apparatus according to a fifteenth aspect is the vacuum processing apparatus according to any one of the tenth to fourteenth aspects, characterized in that the cooling pipe is formed in a rectangular cross section.

As described above, since the cooling pipe is formed in a rectangular cross section, it can be brought into contact with the heat equalizing plate with a large contact area, whereby the heat transfer amount between the heat equalizing plate and the cooling pipe can be increased. Therefore, the heater cover can be cooled through the soaking plate with good cooling efficiency.

A vacuum processing apparatus according to a sixteenth aspect is the vacuum processing apparatus according to any one of the tenth to fifteenth aspects, wherein the contact surfaces of the heater cover, the heat equalizing plate and the cooling pipe are roughened. It is characterized by being.

That is, since the contact surfaces of the heater cover, the heat equalizing plate, and the cooling pipe are roughened, the emissivity is improved even in a depressurized environment, and the heat transfer area of the member surface is increased. The heat transfer rates of the heater cover, the heat equalizing plate, and the cooling pipe can be increased, and thus the heater cover can be cooled with good cooling efficiency.

[0043]

DETAILED DESCRIPTION OF THE INVENTION A vacuum processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings. Here, a plasma CVD apparatus will be described as an example of the vacuum processing apparatus. In FIG. 1, reference numeral 31 is a vacuum processing apparatus.
The vacuum processing apparatus 31 has a film forming unit 34 in which ladder electrodes 33 are provided on both side surfaces of the film forming chamber 32 formed by a vacuum chamber 32a whose pressure is reduced by a vacuum pump (not shown). 2 per batch
The structure is such that one substrate K can be processed at the same time. As shown in FIGS. 2 and 3, a substrate heating heater 36 is provided on both side surfaces of the film forming unit 34 with a heater cover 35 interposed therebetween, and the ladder electrode 33 is also provided.
And the substrate K supported by the heater cover 35,
A mesh heater 37 for heating plasma is provided.

The substrate heating heater 36 is composed of a plurality of heater units 41.
1 has a plurality of rod-shaped cartridge heaters 44 that are connected to a current collecting box 43 to which an introduction pipe 42 is connected so as to be spaced apart from each other and to be erected substantially in parallel.
The cartridge heater 44 has a structure in which a heat generating element 51 is arranged in a tube body 44a. Electric power is supplied to the heat generating element 51 from a conductive wire 53 passing through the introduction pipe 42, so that the heat is generated. Element 51
Is heating up.

A cooling device 61 is provided on the back surface side of the heater cover 35. This cooling device 61
Has a cooling pipe 62 through which a cooling medium passes, and the cooling pipe 62 is closely fixed to the back surface of the heater cover 35. The cooling pipe 62 has a rectangular cross section, and is fixed to the heater cover 35 by tack welding at intervals along the longitudinal direction thereof. Further, the cooling pipe 62 and the heater cover 35 are each blasted and roughened, so that the heat transfer coefficient between them is increased.

As shown in FIG. 4, one end of the cooling pipe 62 is disposed near the center of the heater cover 35, and the cooling pipe 62 is repeatedly folded up and down alternately from one end toward one side at a predetermined pitch. Further, the heater cover 35 is further extended upward and is repeatedly folded back toward the other side of the heater cover 35 alternately in the vertical direction at a predetermined pitch. Further, the heater cover 35 is extended to an intermediate portion in the vertical direction and is repeatedly folded back and forth alternately toward the center of the heater cover 35 at a predetermined pitch in the vertical direction.
From the center to the other side on the lower side, and then repeatedly folded back toward the one side of the heater cover 35 alternately in the vertical direction again at a predetermined pitch.

Flexible pipes 64 having flexibility are provided at both ends of the cooling pipe 62 via connecting pipes 63, respectively.
Are connected to each other, and the ends of these flexible tubes 64 are fixed to a plate member that constitutes the vacuum chamber 32a and are drawn out of the vacuum chamber 32a.

The end of the flexible pipe 64 pulled out of the vacuum chamber 32a is connected to a pipe of a cooling device (not shown) that circulates the cooling medium, and the cooling medium flows from the end of one flexible pipe 64a. The cooling pipe 6 that is supplied and arranged in the central portion of the heater cover 35
It is sent to the cooling pipe 62 from one end of the heater 2, and is sent to the outside of the vacuum chamber 32a from the other end of the heater cover 35, which is located at the lower corner of one side of the heater cover 35, through the other flexible pipe 64b. It is designed to be returned to the cooling device. The pitch of the portion of the cooling pipe 62 fixed to the heater cover 35 along the vertical direction is the same as the pitch of the adjacent cartridge heaters 44 of the substrate heating heater 36. It is located between.

Further, the heater cover 35 is provided with a temperature sensor (not shown) including a thermocouple or the like for detecting the temperature of the heater cover 35, and a control device (not shown) is based on the detection result from the temperature sensor. Then, the power supply to the substrate heating heater 36 is controlled to control the heat generation amount of the substrate heating heater 36, and the temperature of the heater cover 35 is adjusted.

Then, the heater cover 3 provided as the ground electrode in a state where the film forming gas is supplied into the film forming chamber 32.
While supporting the substrate K on the substrate 5 and heating the substrate K by the substrate heater 36, high frequency power is supplied to the ladder electrode 33 provided as a non-grounded electrode in the silane gas atmosphere, and the plasma is heated by the mesh heater 37. By doing so, the silane gas is decomposed and a silicon film is formed on the surface of the substrate K such as glass.

Here, according to the vacuum processing apparatus 31,
On the back surface side of the heater cover 35 heated by the substrate heater 36 for heating the substrate K, a cooling mechanism 61 having a cooling pipe 62 through which a cooling medium flows can be provided to cool the heater cover 35. Since the structure is adopted, it is possible to lower the temperature not only in the substrate K but also in the film forming chamber 32 even in a large-sized apparatus for forming a film on the large-sized substrate K. As a result, in particular, a mesh heater for heating plasma is provided. In the case of using 37, by cooling the substrate K from which the temperature may rise excessively from the back surface side of the heat cover 35 in the related art, the substrate K can be suppressed to a designated temperature suitable for film formation, Further, even when the temperature rises due to the reaction heat generated during the self-cleaning in which the Si-related deposits are reacted and removed by the plasma, the temperature inside the film forming chamber 32 increases. It is possible to suppress the promotion of corrosion. That is, it is possible to suppress an excessive temperature rise, eliminate the adverse effects of heat on the product quality and the members in the film forming chamber 32, and obtain a high-quality product while suppressing the deterioration of the apparatus.

Further, the central portion of the heat cover 35 has a smaller amount of heat transfer to the peripheral structures than the peripheral portion thereof and is less likely to be cooled, but one end of the cooling pipe 62 arranged in the central portion of the heater cover 35. Since the cooling medium is supplied from the heater cover 35, the heater cover 35 can be uniformly cooled.

Moreover, since both ends of the cooling pipe 62 provided on the back surface side of the heater cover 35 are connected to the flexible pipe 64 drawn out of the vacuum chamber 32a, the substrate K is attached to the ladder electrode 33. This is suitable for a structure in which the heater cover 35 is moved by the drive mechanism 24 in order to move the heater cover 35 close to and away from each other. In addition, the rod-shaped cartridge heater 4
Since the cooling pipe 62 is arranged between the four, the heating by the cartridge heater 44 and the cooling by the cooling pipe 62 can be satisfactorily performed, respectively, and the temperature of the substrate K can be accurately controlled. The quality of the product can be improved.

Further, since the cooling pipe 62 is formed in a rectangular cross section, the heater cover 35 has a large contact area.
To the heater cover 3, which allows the heater cover 3
5 and the heat transfer amount between the cooling pipe 62 and the cooling pipe 62 can be increased, which further improves the cooling efficiency with good heater efficiency.
Can be cooled. By roughening the contact surface between the heater cover 35 and the cooling pipe 62, the emissivity is improved and the surface heat transfer area is increased even under a depressurized environment. The heat transfer coefficient can be increased, and thus the heater cover 35 can be cooled with good cooling efficiency.

Next, a vacuum processing apparatus according to another embodiment will be described. As shown in FIG. 5, this vacuum processing apparatus 3
In No. 1, the soaking plate 71 is provided on the back surface of the heater cover 35, and the soaking plate 71 is provided with the cooling pipe 6 of the cooling device 61.
2 is fixed tightly.

The heat equalizing plate 71 is made of a stainless plate or an aluminum plate, and is divided into a plurality of parts as shown in FIG. The thickness of the heat equalizing plate 71 is set in consideration of corrosion resistance and heat resistance, and a thickness of about 2 to 4 mm is used here. The heat equalizing plates 71 are fixed to the heater cover 35 with a gap therebetween.

As shown in FIG. 7, a plurality of mounting holes 72 are formed in the heat equalizing plate 71, and screws (not shown) having washers attached to the mounting holes 72 are attached to the heater cover 3.
By being screwed into the screw hole formed in 5, the heater cover 35 is closely fixed to the back surface.

Further, the mounting hole 72 of the heat equalizing plate 71 is based on the mounting hole 72a formed in the central upper part, and the mounting hole 72 is formed in a horizontal position and a vertical position with respect to the reference mounting hole 72a. 72b and 72c are long holes that are long in the horizontal direction and the vertical direction, respectively, and the heat equalizing plate 71 can be thermally expanded freely without impairing the positional relationship between the reference mounting hole 72a and the heat cover 35. It is like this. Further, the mounting holes 72d formed at positions oblique to the reference mounting hole 72a are each formed with a large diameter. That is, the heat equalizing plate 71 has the reference mounting hole 72a.
As a reference for attachment to the heater cover 35, when it expands or contracts due to thermal expansion, its displacement is absorbed at the attachment positions in the other attachment holes 72b, 72c, 72d.

In addition, since the plurality of slits 73 connected to the outer edge are formed on the outer peripheral side of the heat equalizing plate 71 at intervals in the circumferential direction, the temperature between the center and the periphery of the heat equalizing plate 71 is increased. It is possible to prevent deformation in the direction orthogonal to the surface due to the difference in thermal expansion amount due to the difference.

Cooling pipe 62 fixed to the heat equalizing plate 71
As shown in FIG.
It is pressed against 1 and fixed. This stopper 74
Is a metal plate having elasticity, and is a fixing piece 74a fixed to the heat equalizing plate 71 by a screw 75, and a cooling pipe 6 when the fixing piece 74a is fixed to the heat equalizing plate 71.
2 has a holding piece 74b for holding 2 and a biasing portion 74c projecting toward the cooling pipe 62 is formed in the central portion of the holding piece 74b. The biasing portion 74c serves to cool the cooling pipe 62b. Are pressed against the heat equalizing plate 71 so that they are in close contact with each other.

In the case of the above structure, the heater cover 3
5, the contact surfaces of the heat equalizing plate 71 and the cooling pipe 62 which are in contact with each other are roughened by blasting or the like to increase their surface areas.

As described above, in the vacuum processing apparatus 31 of this embodiment, the substrate heating heater 3 for heating the substrate K is used.
On the back surface side of the heater cover 35 which is heated by 6, a cooling mechanism 61 having a cooling pipe 62 through which a cooling medium flows via a heat equalizing plate 71 is provided to cool the heater cover 35. Therefore, similarly to the above-described embodiment, even in a large-sized apparatus for forming a film on a large-sized substrate K, not only the substrate K but also the temperature in the film forming chamber 32 can be lowered. When the mesh heater 37 that heats the plasma is used, the temperature of the substrate K can be suppressed to a specified temperature suitable for film formation, and the reaction heat generated during the self-cleaning process in which the Si-related deposits are reacted and removed by the plasma is generated. Even when the temperature becomes high, it is possible to suppress the promotion of corrosion of the members in the film forming chamber 32 due to the temperature rise. That is, it is possible to suppress an excessive temperature rise, eliminate the adverse effects of heat on the product quality and the members in the film forming chamber 32, and obtain a high-quality product while suppressing the deterioration of the apparatus.

Further, since the cooling pipe 62 is provided on the back surface side of the heater cover 35 via the soaking plate 71, the soaking plate 71 can uniformly cool the heater cover 35 by the cooling pipe 62. In addition, a plurality of soaking plates 7
Since 1 is provided with a slight gap therebetween, it is possible to prevent the heat equalizing plates 71 from interfering with each other due to thermal expansion.

Further, with respect to the reference mounting hole 72a, another mounting hole is formed as a mounting hole 72b, 72c or a large diameter, which is an elongated hole having a margin in the direction of displacement due to thermal expansion of the heat equalizing plate 71. Since the mounting holes 72d are formed as the mounting holes 72d, the displacement of the heat equalizing plate 71 can be absorbed at the mounting positions of the mounting holes 72b, 72c, and 72d other than the standard mounting hole 72a, and thus, the heat equalizing plate 71 It is possible to reliably prevent the deformation in the direction orthogonal to the plane.

Further, the plurality of slits 73 formed at the peripheral edge of the heat equalizing plate 71 at intervals in the circumferential direction surely prevent the heat equalizing plate 71 from being deformed in the direction orthogonal to the surface due to thermal expansion. You can Further, the cooling pipe 62 and the heat equalizing plate 71
Even if the positional relationship between the heat transfer plate 71 and the cooling pipe 62 deviates due to the difference in the amount of thermal expansion, since the cooling pipe 62 is pressed against the heat equalizing plate 71 by the stoppers 74, the heat transfer coefficient between the heat equalizing plate 71 and the cooling pipe 62. It is possible to relatively freely move the positional relationship between the heater cover 35 and the heater cover 35 through the soaking plate 71 with good cooling efficiency.

Also in this case, since the cooling pipe 62 is formed in a rectangular cross section, the soaking plate 7 has a large contact area.
1 can be brought into contact with the heater cover 1, thereby increasing the amount of heat transfer between the heat equalizing plate 71 and the cooling pipe 62, which further improves the cooling efficiency through the heat equalizing plate 71. 35 can be cooled.

Further, the heater cover 35 and the heat equalizing plate 71
Since the contact surfaces of the cooling pipe 62 and the cooling pipe 62 are roughened, the heat transfer rates of the heater cover 35, the heat equalizing plate 71, and the cooling pipe 62 can be increased, which further improves the cooling efficiency. The heater cover 35 can be cooled by.

In each of the above examples, the cooling pipe 6 is used.
Although the cross-sectional shape of 2 is rectangular, the cross-sectional shape of the cooling pipe 62 is not limited to a rectangular shape, and may be an elliptical shape or a circular shape. In these cases, the heater cover 35 or the heat equalizing plate 71 is used. In order to obtain good contact between the two, it is preferable to increase the number of tack welds or increase the number of fixing points by the stoppers 74.

[0069]

As described above, according to the vacuum processing apparatus of the present invention, the following effects can be obtained. According to the vacuum processing apparatus of claim 1, since the cooling mechanism is provided on the back surface side of the heater cover heated by the substrate heating heater to heat the substrate, the heater cover can be cooled. Even in a large-sized apparatus for depositing a film on the substrate, it is possible to lower the temperature not only in the substrate but also in the deposition chamber. Therefore, particularly when a mesh heater for heating plasma is used, the substrate is deposited. The temperature inside the film deposition chamber can be corroded by the temperature rise even if the temperature rises due to the reaction heat generated during the self-cleaning process in which the Si-related deposits are removed by reaction with plasma. The promotion of can be suppressed. In other words, it is possible to obtain a high-quality product while suppressing the excessive temperature rise, eliminating the adverse effects of heat on the product quality and the members in the film forming chamber, and suppressing the deterioration of the apparatus.

According to the vacuum processing apparatus of the second aspect, the temperature of the heater cover can be reduced extremely easily and evenly by causing the cooling medium to flow in the cooling pipe provided on the back side of the heater cover. It is possible to prevent an adverse effect due to an excessive temperature rise of the substrate and the members in the film forming chamber.

According to the vacuum processing apparatus of the third aspect, the cooling medium is supplied from one end of the cooling pipe arranged in the central portion of the heater cover which is less likely to be cooled than the peripheral portion.
The heater cover can be cooled uniformly.

According to the vacuum processing apparatus of the fourth aspect, since both ends of the cooling pipe provided on the back surface side of the heater cover are connected to the flexible pipe drawn to the outside of the vacuum chamber, the electrodes are not connected to the electrodes. This is suitable for a structure in which the heater cover is moved to move the substrate closer to and away from each other.

According to the vacuum processing apparatus of the fifth aspect, since the cooling pipe is arranged between the rod-shaped cartridge heaters, the heating by the cartridge heater and the cooling by the cooling pipe can be performed well. Therefore, the temperature of the substrate can be accurately controlled, and the quality of the product can be improved.

According to the vacuum processing apparatus of the sixth aspect, since the heater cover is directly cooled by the cooling pipe, the heater cover can be cooled with good cooling efficiency.

According to the vacuum processing apparatus of the seventh aspect, since the cooling pipe is pressed against the heater cover by the stopper, the heat transfer coefficient between the heater cover and the cooling pipe can be increased. The heater cover can be cooled with good cooling efficiency.

According to the vacuum processing apparatus of the eighth aspect, since the cooling pipe is formed in a rectangular shape in cross section, it can be brought into contact with the heater cover with a large contact area. The amount of heat transfer between the heater cover and the heater cover can be increased, and thus the heater cover can be cooled with good cooling efficiency.

According to the vacuum processing apparatus of the ninth aspect, since the contact surface between the heater cover and the cooling pipe is roughened, the heat transfer coefficient between the heater cover and the cooling pipe can be increased, Thereby, the heater cover can be further cooled with good cooling efficiency.

According to the vacuum processing apparatus of the tenth aspect,
Since the cooling pipe is provided on the back surface side of the heater cover via the heat equalizing plate, the heater cover can be uniformly cooled by the cooling pipe.

According to the vacuum processing apparatus of the eleventh aspect,
Since the plurality of heat equalizing plates are provided with a slight gap therebetween, it is possible to prevent the heat equalizing plates from interfering with each other due to thermal expansion.

According to the vacuum processing apparatus of the twelfth aspect,
Other mounting holes than the standard mounting hole are formed as long holes or large diameters that have a margin in the direction of displacement due to thermal expansion of the heat equalizing plate, so mounting in mounting holes other than the standard mounting hole It is possible to absorb the displacement of the heat equalizing plate at a location, and thereby reliably prevent the deformation of the heat equalizing plate in the direction orthogonal to the surface of the heat equalizing plate.

According to the vacuum processing apparatus of the thirteenth aspect,
By the plurality of slits formed at intervals in the circumferential direction on the periphery of the heat equalizing plate, it is possible to reliably prevent the heat equalizing plate from being deformed in the direction orthogonal to the surface due to thermal expansion.

According to the vacuum processing apparatus of the fourteenth aspect,
Since the cooling pipe is pressed against the heat equalizing plate by the stopper, the heat transfer coefficient between the heat equalizing plate and the cooling pipe can be increased, which further improves the cooling efficiency through the heat equalizing plate. The heater cover can be cooled.

According to the vacuum processing apparatus of the fifteenth aspect,
Since the cooling pipe is formed in a rectangular shape in cross section, it can be brought into contact with the heat equalizing plate with a large contact area.
The amount of heat transfer between the heat equalizing plate and the cooling pipe can be increased, and thereby the heater cover can be cooled via the heat equalizing plate with good cooling efficiency.

According to the vacuum processing apparatus of the sixteenth aspect,
Since the contact surfaces of the heater cover, the heat equalizing plate, and the cooling pipe are roughened, the heat transfer rates of these heater cover, the heat equalizing plate, and the cooling pipe can be increased.
Further, the heater cover can be cooled with good cooling efficiency.

[Brief description of drawings]

FIG. 1 is a plasma C for explaining the configuration and structure of a plasma CVD apparatus that is a vacuum processing apparatus according to an embodiment of the present invention.
It is a schematic perspective view of a VD device.

FIG. 2 is a side sectional view in the vicinity of the substrate for explaining the configuration and structure of the plasma CVD apparatus which is the vacuum processing apparatus according to the embodiment of the present invention.

FIG. 3 is a plan sectional view of the periphery of the substrate for explaining the configuration and structure of a plasma CVD apparatus that is a vacuum processing apparatus according to an embodiment of the present invention.

FIG. 4 is a plan view of a heater cover for explaining a cooling mechanism provided in the heater cover of the plasma CVD apparatus which is the vacuum processing apparatus according to the embodiment of the present invention.

FIG. 5 is a plan cross-sectional view around a substrate for explaining the configuration and structure of a plasma CVD apparatus which is a vacuum processing apparatus according to another embodiment of the present invention.

FIG. 6 is a plan view of a heater cover illustrating a cooling mechanism provided in a heater cover of a plasma CVD apparatus which is a vacuum processing apparatus according to another embodiment of the present invention.

FIG. 7 is a plan view of a soaking plate attached to a heater cover of a plasma CVD apparatus which is a vacuum processing apparatus according to another embodiment of the present invention.

FIG. 8 is a perspective view of a part of a cooling pipe attached to a soaking plate for explaining a mounting structure of the cooling pipe to the soaking plate in a plasma CVD apparatus which is a vacuum processing apparatus according to another embodiment of the present invention. is there.

FIG. 9 is a cross-sectional view of a plasma CVD apparatus for explaining the configuration and structure of the plasma CVD apparatus which is a vacuum processing apparatus.

FIG. 10 is a schematic perspective view of a plasma CVD apparatus for explaining the configuration and structure of the plasma CVD apparatus which is a vacuum processing apparatus.

[Explanation of symbols]

32 film forming chamber 35 heater cover 36 Substrate heating heater 44 cartridge heater 61 Cooling mechanism 62 cooling pipe 64 flexible tube 71 Soaking plate 72 Mounting hole 73 slits 74 stopper K board

Continued front page    (72) Inventor Eiichiro Otsubo             1-1 Satinoura Town, Nagasaki City, Nagasaki Prefecture Mitsubishi Heavy Industries             Nagasaki Shipyard Co., Ltd. (72) Inventor Masayuki Fukagawa             3-5-1, 717-1, Fukahori-cho, Nagasaki-shi, Nagasaki             Hishi Heavy Industries Ltd. Nagasaki Research Center F-term (reference) 4K030 AA06 BA29 FA01 KA26 LA16                 5F004 AA16 BB11 BB16 BB18 BB26                       BD04 CA04                 5F045 AA08 AB02 AC01 CA13 EB06                       EK12                 5F051 AA05 BA12 CA15 CA21

Claims (16)

[Claims] 1. A plate-shaped heater cover for supporting a substrate on which a substrate processing such as film formation is performed on a front surface in a film forming chamber in a reduced pressure environment, and a back surface side of the heater cover in a surface direction. A vacuum processing apparatus having a substrate heating heater which is provided along the substrate and heats the substrate via the heater cover during substrate processing, wherein the heater cover has a cooling mechanism on its back surface for cooling the heater cover. The vacuum processing apparatus is characterized by being provided. 2. The vacuum processing apparatus according to claim 1, wherein the cooling mechanism has a cooling pipe which is provided along the back surface of the heater cover and through which a cooling medium is passed. 3. The cooling pipe according to claim 2, wherein one end of the cooling pipe is arranged in a central portion of the heater cover, and the cooling medium is supplied from one end of the cooling pipe arranged in a central portion of the heater cover. Vacuum processing equipment. 4. A flexible pipe, which is flexible and is drawn out of a vacuum chamber forming the film forming chamber, is connected to both ends of the cooling pipe. Alternatively, the vacuum processing apparatus according to claim 3. 5. The substrate heater comprises a rod-shaped cartridge heater arranged in parallel, and the cooling pipe comprises:
The vacuum processing apparatus according to any one of claims 2 to 4, wherein a portion along the longitudinal direction of the cartridge heater is arranged between the cartridge heaters in a plan view. 6. The vacuum processing according to claim 2, wherein the cooling pipe is fixed to a back surface of the heater cover, and the heater cover is directly cooled by the cooling pipe. apparatus. 7. The vacuum processing apparatus according to claim 6, wherein the cooling pipe is pressed and fixed to the heater cover by a plurality of fasteners. 8. The vacuum processing apparatus according to claim 6, wherein the cooling pipe has a rectangular cross section. 9. The heater cover and the cooling pipe have a roughened contact surface.
The vacuum processing apparatus according to claim 1. 10. The cooling pipe is fixed to a heat equalizing plate provided on the back surface of the heater cover, and the heater cover is cooled by the cooling pipe via the heat equalizing plate. The vacuum processing apparatus according to claim 2. 11. The vacuum processing apparatus according to claim 10, wherein a plurality of the heat equalizing plates are arranged with a slight gap therebetween. 12. The soaking plate is formed with a plurality of mounting holes, and the soaking plate is fixed to the heater cover by a screw that is inserted into the mounting hole and screwed into the heater cover. One of the holes is a reference mounting hole, and the other mounting hole is a long hole or a large diameter with a margin in the displacement direction due to thermal expansion of the heat equalizing plate with respect to the reference mounting hole. The vacuum processing apparatus according to claim 10 or 11, wherein the vacuum processing apparatus is formed. 13. The heat equalizing plate is formed with a plurality of slits at its peripheral edge at intervals in the circumferential direction to prevent deformation due to thermal stress.
The vacuum processing apparatus according to claim 1. 14. The vacuum processing apparatus according to claim 10, wherein the cooling pipe is pressed and fixed to the heat equalizing plate by a plurality of fasteners. 15. The cooling pipe is formed in a rectangular cross section, according to any one of claims 10 to 14.
The vacuum processing apparatus according to the item. 16. The vacuum processing apparatus according to claim 10, wherein the heater cover, the heat equalizing plate, and the cooling pipe have roughened contact surfaces, respectively.