JP2003073831A - Raw solution material for forming dielectric thin film, and method for forming dielectric thin film by using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a film forming reproducibility of a formed dielectric thin film, and stabilize the surface morphology. SOLUTION: The raw solution material includes a raw material liquid prepared by mixing one or more raw organometallic compounds, and one or more organic solvents selected from the group consisting of tetrahydrofuran, methyltetrahydrofuran, n-octane, iso-octane, hexane, cyclohexane, pyridine, lutidine, butyl acetate and amyl acetate, and alcohol of 0.1-1,000 ppm as an additive.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a DRAM (Dynami
c Random Access Memory) and other complex oxide dielectric thin films used for dielectric filters, etc.
osition, hereinafter referred to as MOCVD method. The present invention relates to a solution raw material for forming a dielectric thin film, which is formed by More specifically, the present invention relates to a solution raw material for forming a dielectric thin film, which improves the reproducibility of the formed film and stabilizes the surface morphology.

[0002]

2. Description of the Related Art In recent years, high integration of semiconductor memory devices such as DRAMs has been rapidly advanced for the purpose of high speed, low power consumption and low cost. However, no matter how the degree of integration is improved, the capacitor, which is a component of DRAM or the like, must have a certain capacitance. As the integration density of memory devices increases rapidly,
It is necessary to reduce the thickness of the dielectric thin film used as a capacitor, and it is becoming difficult to reduce the thickness of the conventional SiO ₂ and secure a certain capacity at the same time. Therefore, if the material can be changed to increase the dielectric constant, the capacity can be secured as in the case of thinning. Therefore, research on using a dielectric material with a high dielectric constant as the dielectric film of a capacitor for memory devices. Have been attracting attention recently. As the performance required for such a memory capacitor material, it is most important that it is a thin film having a high dielectric constant as described above and a small leak current. That is,
As long as a high dielectric constant material is used, it is necessary to make the film as thin as possible and to minimize the leakage current.

From this point of view, 2 having a higher dielectric constant is used.
The use of complex oxide-based dielectric materials consisting of oxides containing one or more metals has been investigated. Examples of such a dielectric material include lead titanate (PT), lead zirconate titanate (PZT), and lead lanthanum zirconate titanate (PL).
ZT), strontium titanate (ST), barium titanate (BT), barium strontium titanate (B
ST) and the like. Examples of the organic metal compound used as a raw material for the dielectric thin film include dipivaloylmethane ((CH ₃ ) ₃ CC
OCH ₂ COC (CH ₃ ) ₃ , hereinafter referred to as dpm. ) Etc. β-
An organometallic complex having a diketone compound as a ligand or [Zr
Metal alkoxides such as (Ot-Bu) ₄ ] are commonly used. Both metal alkoxides and β-diketonato complexes are used as raw materials for metals such as Ti, Zr and Ta.
A β-diketonato complex is mainly used as a metal raw material of or.

The β-diketonato complex is generally susceptible to deterioration under the influence of moisture and carbon dioxide in the air. In addition, during storage, an oligomer is formed to increase the molecular weight and increase the evaporation temperature, which easily causes alteration. For example, dpm is a typical β-diketone compound, but its metal complex, [Ba (dpm) ₂ ] and [Sr (dpm) ₂ ], should be stored in a desiccator when storing them. Even if the value is paid, the TG (Thermogravimetry) is changed, and it is extremely unstable. Therefore, β-
The diketonato complex requires meticulous care in order to prevent deterioration during storage and during handling, and has poor operability as a raw material. Therefore, as a means for suppressing the deterioration of the organometallic compound as the raw material, the purity of the organometallic compound has been increased to achieve long-term storage stability.

As a method of forming a complex oxide-based dielectric thin film, a sol-gel method in which a metal alkoxide raw material is spin-coated to form a film on a substrate has been extensively studied so far. Since the sol-gel method does not vaporize the metal component, the composition control of the film is easy. However, the capacitor electrode of the DRAM has a step, and the higher the degree of integration, the larger the step becomes and becomes complicated. Therefore, it is difficult to uniformly form the dielectric thin film on the electrode serving as the substrate by the spin coating method.
Therefore, in recent years, in view of high integration of devices, a dielectric thin film is formed by MOCVD method which is excellent in step coverage (= step coverage, throwing power to the surface of a complicated shape with steps). Research has been activated.

In the MOCVD method, a metal oxide produced by heating an organic metal compound, which is a raw material of various metals, under reduced pressure to vaporize the vapor, transporting the vapor to a film forming chamber and thermally decomposing it on the substrate. Is a method of adhering to the substrate. M
The OCVD method is generally performed because it has better step coverage than other film manufacturing methods. In the formation of the dielectric thin film by this MOCVD method, initially, the raw material organometallic compound was directly heated and vaporized, and the generated vapor was sent to the film forming chamber for film formation. However, organic metal compound raw materials, especially compounds such as the dpm complex recommended for MOCVD, have poor long-term storage stability and vaporization characteristics, and must be stably transported to the CVD reaction part by heating at low temperatures. Was impossible. Further, when heating at a high temperature in order to increase the vaporization efficiency of the raw material, the raw material is transported while being thermally decomposed before reaching the film forming chamber, resulting in poor crystallinity of the film and compositional deviation. Therefore, it is difficult to stably transport the organometallic compound raw material to the film forming chamber, the expensive raw material becomes disposable after each film formation, and it is difficult to control the composition of the film, and the good dielectric property is obtained. There is also a problem that it is not possible to form a dielectric film having Further, in this method, when the vaporization rate is suppressed and the synthesis (reaction) time is lengthened, the stability of the raw material deteriorates over time and the vaporization property gradually decreases, so that the formed film is It is unavoidable that the composition in the thickness direction becomes inhomogeneous and the leak current increases.

As a method for solving the above-mentioned problems, a solution vaporization CVD method capable of stably supplying a raw material organometallic compound to a film forming chamber is widely used at present. This solution vaporization CVD method is an improvement of the MOCVD method, and is a solid C
This is a method of dissolving a VD raw material in various organic solvents and supplying it as a liquid to a CVD apparatus.

[0008]

However, although the effect of improving the long-term storage stability of the solution raw material was obtained by highly purifying the organometallic compound as the raw material, the highly purified raw material was used by the MOCVD method. When a dielectric thin film is formed on a substrate by using
As shown in FIG. 5, the so-called abnormal growth of the film has been observed, in which the thin film 2 is formed only on the bottom of the trench or the hole of the substrate 1, and the remarkable grain growth occurs on the film surface. 3 is a diagram in which a thin film is not formed at the bottom of the trench and the thin film formed outside the trench is abnormally grown, FIG. 4 is a diagram in which the thin film formed at the bottom of the trench is abnormally grown, and FIG. 5 is shown at the top of the trench. It is the figure which the thin film grew abnormally so that a trench might be covered.

An object of the present invention is to provide a solution material for forming a dielectric thin film, which can improve the reproducibility of the formed dielectric thin film and stabilize the surface morphology.

[0010]

The invention according to claim 1 is
Selected from the group consisting of one or more organic metal compound raw materials and tetrahydrofuran (hereinafter referred to as THF), methyltetrahydrofuran, n-octane, isooctane, hexane, cyclohexane, pyridine, lutidine, butyl acetate and amyl acetate. It is a solution raw material for forming a dielectric thin film, characterized in that the raw material liquid prepared by mixing one or more kinds of organic solvents contains 0.1 to 1000 ppm of alcohol as an additive. In the invention according to claim 1, 0.1 to 1000 ppm of alcohol is added as an additive to a raw material liquid in which an organic metal compound raw material is dissolved in an organic solvent, so that the alcohol causes intramolecular and intermolecular interaction of the organometallic compound. Therefore, the dielectric thin film formed by using this solution raw material has good film-forming reproducibility and the surface morphology is stabilized. The amount of alcohol added is 0.1 to 1000 ppm. Preferably 10 to 80
It is 0 ppm. If the added amount is less than 0.1 ppm,
Intramolecular and intermolecular interactions of the organometallic compound cannot be suppressed, and effects such as improvement in film reproducibility and stabilization of surface morphology do not appear. If the added amount exceeds 1000 ppm, the thin film to be formed causes abnormal growth.

The invention according to claim 2 is the invention according to claim 1, which is a solution raw material in which the alcohol is a monohydric alcohol having a linear alkyl group or a branched alkyl group having 1 to 4 carbon atoms. In the invention according to claim 2, the alcohol having a carbon number of more than 4 and the dihydric and trihydric alcohols have a problem of being bulky due to the coordination steric effect. The invention according to claim 3 is the invention according to claim 1, wherein the organometallic compound is a solution raw material which is a compound in which a metal atom is bonded to an organic group through an oxygen atom. The invention according to claim 4 is the invention according to claim 3, wherein the organometallic compound is a compound selected from the group consisting of a metal alkoxide, a metal β-diketonato complex, and a mixture of a metal alkoxide and a β-diketonato complex. It is a solution raw material. The invention according to claim 5 is the invention according to claim 4, wherein the alkoxide is isopropoxide or tert-butoxide, and the β-diketonato complex is a dipivaloylmethanato complex. The invention according to claim 6 is the invention according to claim 5, wherein the organometallic compound is a dipivaloylmethanato complex of Ba and Sr, and isopropoxide, tert-butoxide, dipivaloylmethanato complex, and isopropoxide. A dielectric thin film comprising a Ti compound selected from the group consisting of a mixture of propoxide and dipivaloylmethanato complex and a mixture of tert-butoxide and dipivaloylmethanato complex, wherein the dielectric thin film is barium strontium titanate complex oxide thin film Is a solution raw material. The invention according to claim 7 is the invention according to claim 5, wherein the organometallic compound is a Pb dipivaloylmethanato complex, a β-diketone, a Zr compound of an alkoxide,
Ti selected from the group consisting of isopropoxide, tert-butoxide, dipivaloylmethanato complex, a mixture of isopropoxide and dipivaloylmethanato complex, and a mixture of tert-butoxide and dipivaloylmethanato complex. It is a solution raw material which is made of a compound and whose dielectric thin film is a lead zirconate titanate complex oxide thin film.

The invention according to claim 8 is, as shown in FIG. 2, a complex oxide type dielectric thin film formed on a substrate 13 by a metal organic chemical vapor deposition method using the solution raw material according to any one of claims 1 to 7. 15 is a method of forming 15. The invention according to claim 9 is the invention according to claim 8, which is a method of forming a dielectric thin film by a metal organic chemical vapor deposition method by supplying a solution raw material in a liquid state to a vaporization chamber. Claim 10
The invention according to claim 9 is the invention according to claim 9, which is a method for supplying separate solution raw materials for each metal to the vaporization chamber. In the invention according to any one of claims 8 to 10, by using the solution raw material according to any one of claims 1 to 7 to form a complex oxide type dielectric thin film on a substrate by MOCVD, reproducibility of film formation is improved. A dielectric thin film having a stable surface morphology can be obtained.

The eleventh aspect of the present invention is a complex oxide type dielectric thin film formed on a substrate by the method according to any one of the eighth to tenth aspects. The invention according to claim 12 is
A dielectric thin film made of barium strontium titanate formed on a substrate by the method according to claim 8. The invention according to claim 13 is a dielectric thin film made of lead zirconate titanate formed on a substrate by the method according to any one of claims 8 to 10.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described. Examples of the complex oxide-based dielectric thin film that can be formed from the solution raw material according to the present invention include lead titanate (PT), lead zirconate titanate (PZT), lead lanthanum zirconate titanate (PLZT), and titanium. Examples thereof include thin films of strontium acid salt (ST), barium titanate (BT), barium strontium titanate (BST), and the like, but other thin films are also applicable.

As the organic metal compound raw material, an organic compound containing a metal selected from Pb, Ti, Zr and alkaline earth metals (Ca, Ba, Sr, etc.), which are the constituent metals of the thin film, is used. In addition, alkali metal (C
s), various transition metals such as Mn, Nb and V, and rare earth metals such as La may also be used. In the case of a BST thin film, organometallic compounds of Ti, Ba and Sr are used as raw materials.

The organometallic compound raw material is vaporizable,
A substance that is thermally decomposed by heating and easily transformed into an oxide by introducing an oxidizing agent (oxygen) is used. Such an organometallic compound is generally a compound having a structure in which a metal atom is bonded to an organic group through an oxygen atom. Examples of preferred compounds of this type include metal alkoxides, metal β-diketonato complexes, and mixtures of metal alkoxides and β-diketonato complexes. Examples of β-diketonato complexes include:
Acetylacetone, hexafluoroacetylacetone,
There are metal complexes having β-diketones such as dpm and pentafluoropropanoylpivaloylmethane as ligands. Of these, preferred is a complex with dpm. The metal alkoxide preferably has an alkoxy group having 1 to 6 carbon atoms, and particularly preferably has a branched alkoxy group (isopropoxide, tert-butoxide, etc.). Particularly preferred organometallic compounds are metal dipivaloylmethanato complexes, metal isopropoxides, metal tert-butoxides, mixtures of metal isopropoxides and dipivaloylmethanato complexes, metal tert-butoxides and dipivaloylmethanato complexes. It is a mixture of complexes. For alkaline earth metals, alkali metals and Pb, it is preferable to use β-diketonato complexes (for example, dipivaloylmethanato complex), and Ti, Z
Regarding the transition metals such as r, V, and Nb, generally, both β-diketonato complex and metal alkoxide can be used, and a mixture of metal alkoxide and β-diketonato complex can also be used.

Materials for forming a BST thin film include dipivaloylmethanato complexes of Ba and Sr, isopropoxide, tert-butoxide, dipivaloylmethanato complex, and isopropoxide and dipivaloylmethanato complex. Preference is given to using Ti compounds selected from mixtures and mixtures of tert-butoxide and dipivaloylmethanato complexes.
Further, as a raw material for forming the PZT thin film, a dipivaloylmethanato complex of Pb, Zr of β-diketone and alkoxide is used.
Compound, selected from the group consisting of isopropoxide, tert-butoxide, dipivaloylmethanato complex, a mixture of isopropoxide and dipivaloylmethanato complex, and a mixture of tert-butoxide and dipivaloylmethanato complex. It is preferable to use a Ti compound that has been prepared.

The organic solvent may be one or more selected from the group consisting of THF, methyltetrahydrofuran, n-octane, isooctane, hexane, cyclohexane, pyridine, lutidine, butyl acetate and amyl acetate. Preferred is THF.

The solution raw material for forming a dielectric thin film of the present invention is 1
Alcohol as an additive in a raw material liquid prepared by mixing one or more kinds of organometallic compound raw materials with an organic solvent as an additive.
It is characterized by containing ˜1000 ppm. As the alcohol, a monohydric alcohol having a linear alkyl group having 1 to 4 carbon atoms or a branched alkyl group is used. In particular,
Examples include isopropanol, tert-butanol, isoamyl alcohol and the like. These additives may be used alone or in combination of two or more.

For example, as an organometallic compound [Ba (d
pm) ₂ ] and THF as an organic solvent and the organic metal compound is dissolved in the organic solvent, the raw material liquid is [Ba (dp
[alpha] orbital is empty in the metal element Ba in m) ₂ ], the bond cleavage between the metal Ba and the ligand dpm occurs in the molecule of the organometallic compound (intramolecular cleavage). ), Further, intermolecular polymerization between the metal Ba and the ligand dpm occurs,
It is massified. Since the oligomer that has been polymerized becomes thermally unstable, when it is vaporized in the vaporization chamber of the CVD apparatus, it is heated and divided into indeterminate small molecules and organic compounds, and small molecules are formed in the film formation chamber. Molecules that are partially oligomers will be supplied at the same time. Therefore, the dielectric thin film formed on the substrate does not have reproducibility of film formation on the surface covered with the step of the submicron unit, and the surface is roughened to cause abnormal morphology.

By adding 0.1 to 1000 ppm of alcohol as an additive to this raw material liquid, the alcohol is a polar organic substance which easily reacts with unpaired electrons of oxygen, and therefore trap effect on the empty α orbit of the metal element. Since the formation of intermolecular polymer is suppressed, stable vaporization is maintained during thin film formation, film reproducibility of the formed dielectric thin film is improved, and morphology of the thin film surface is stabilized. Although an organometallic compound containing Ba has been described as an example, a similar coordination stabilizing effect can be obtained with an organometallic compound containing Ti or Sr.

As a method for preparing the solution raw material of the present invention, two or more kinds of organic metal compounds containing each metal element constituting the dielectric thin film are dissolved together or separately in an organic solvent, and further an additive is added. As alcohol 0.1-1000
A solution raw material used for forming a dielectric thin film by the MOCVD method is prepared by including the same in the amount of ppm. M using this solution raw material
A dielectric thin film is formed on a substrate or another substrate by the OCVD method. In this embodiment mode, the MOCVD method is a solution vaporization CVD method in which each solution is supplied to a heated vaporization chamber, each solution raw material is instantly vaporized, and the vaporized material is sent to the film formation chamber.

As shown in FIG. 2, the MOCVD apparatus comprises a chamber 10 and a steam generator 11. Chamber 10
A heater 12 is provided inside the substrate, and a substrate 13 is held on the heater 12. The inside of the chamber 10 is evacuated by a pipe 17 including a pressure gauge 14 and a needle valve 16. The steam generator 11 includes a raw material container 18, and the raw material container 18 stores a solution raw material in which an organic metal compound is dissolved in an organic solvent and further an additive is added. A carrier gas introduction pipe 21 is connected to the raw material container 18 via a gas flow rate control device 19, and a supply pipe 22 is connected to the raw material container 18. Needle valve 23 on supply pipe 22
Also, a solution flow rate controller 24 is provided, and the supply pipe 22 is connected to the vaporization chamber 26. A carrier gas introduction pipe 29 is connected to the vaporization chamber 26 via a needle valve 31 and a gas flow rate adjusting device 28. The vaporization chamber 26 is further connected to the chamber 10 by a pipe 27. In this device, N ₂ , H
A carrier gas composed of an inert gas such as e or Ar is introduced into the raw material container 18 from the carrier gas introduction pipe 21, and the solution raw material stored in the raw material container 18 is conveyed to the vaporization chamber 26 by the supply pipe 22. The organometallic compound that has been vaporized in the vaporization chamber 26 to become vapor is further injected into the carrier gas introduction pipe 28.
2 by the carrier gas introduced into the vaporization chamber 26 from
It is supplied into the chamber 10 via 7. In the chamber 10, the vapor of the raw material organometallic compound is thermally decomposed, and the metal oxide generated thereby is deposited on the heated substrate 13 to form a dielectric thin film.

The solution raw material of the present invention has stable vaporization of each raw material compound in a solution state, and the metal atomic ratio of the formed thin film is almost the same as the metal atomic ratio in the solution. A complex oxide-based dielectric thin film having a predetermined composition can be formed, and the quality of the film is stable.

The dielectric thin film formed by the MOCVD method using the solution raw material of the present invention is useful as a DRAM capacitor. The MOCVD method is generally excellent in step coverage, but when the solution raw material of the present invention is used, the film-forming reproducibility is improved and the surface morphology is stabilized as compared with the thin film formed using the conventional solution raw material. Further, the solution raw material of the present invention has excellent composition controllability of the film because the vapor of each raw material compound can be stably supplied to the film forming chamber as described above, and a dielectric material having a desired composition and dielectric properties can be obtained. The body thin film can be stably formed on the substrate. The dielectric thin film formed by using the solution raw material of the present invention can also be used as a dielectric filter in a piezoelectric resonator, an infrared sensor, or the like.

[0026]

EXAMPLES Next, examples of the present invention will be described together with comparative examples. Example 1 First, as an organic barium compound, a bis (dipivaloylmethanato) barium complex [Ba (dp
m) ₂ ], a bis (dipivaloylmethanato) strontium complex [Sr (dp
m) ₂ ] and bisisopropoxybisdibivaloylmethanato titanium complex [Ti (O-i-
Pr) ₂ (dpm) ₂ ] was prepared. Further, THF was prepared as an organic solvent and isopropanol was prepared as an additive. Next, each organic metal compound raw material is mixed with THF to prepare a raw material liquid in which each organic metal compound raw material is dissolved in THF, and further, isopropanol is added to this raw material liquid in 200%.
A solution raw material for a BST dielectric thin film was prepared by adding ppm.

<Example 2> BS in the same manner as in Example 1 except that the addition amount of isopropanol was 1000 ppm.
A solution raw material for T dielectric thin film was prepared.

Comparative Example 1 A solution raw material for a BST dielectric thin film was prepared in the same manner as in Example 1 except that no additive was added. <Comparative Example 2> The amount of isopropanol added was 0.05 pp.
A solution raw material for a BST dielectric thin film was prepared in the same manner as in Example 1 except that m was used. <Comparative Example 3> The addition amount of isopropanol was 1100 pp.
A solution raw material for a BST dielectric thin film was prepared in the same manner as in Example 1 except that m was used.

<Comparison Evaluation> Examples 1-2 and Comparative Examples 1--2
The solution raw materials for BST dielectric thin film prepared in
It is divided into two parts and introduced into a MOCVD apparatus as shown in FIG.
Two types of BST dielectric thin films were formed on each substrate. Atomic force microscope (Atomic Force Microscop)
e: AFM) and Scanning Tunnel Microscope
ing Microscope, hereinafter referred to as STM. ) Etc. were used to measure the film quality of the thin film formed on the substrate surface. The surface of each of the formed dielectric thin films was observed to examine the surface morphology. BST of Examples 1-2 and Comparative Examples 1-3
Table 1 shows the long-term storage stability of the solution raw material for the dielectric thin film, the film-forming reproducibility of the formed dielectric thin film, and the surface morphology.

[0030]

[Table 1]

As is clear from Table 1, in Comparative Example 1 in which the solution raw material containing no additive is used, the film reproducibility is poor and the surface morphology is not stable. Further, in Comparative Examples 2 and 3 in which the amount of alcohol as an additive is outside the range of the present invention, as shown in FIGS. 3 to 5, there are variations in film quality, and a film is formed only on the bottom of the trench. In addition, the surface morphology was not stable due to abnormal growth of the thin film outside the trench. On the other hand, Examples 1 and 2
Then, as shown in FIG. 1, it is understood that the dielectric thin film formed by using the solution raw material of the present invention has good film-forming reproducibility and the surface morphology is stabilized.

[0032]

As described above, the solution raw material for forming a dielectric thin film of the present invention includes one or more organic metal compound raw materials, tetrahydrofuran, methyltetrahydrofuran, n-octane, isooctane, hexane and cyclohexane. , Pyridine, lutidine, butyl acetate, and amyl acetate are mixed with one or more organic solvents selected from the group consisting of an organic solvent and an alcohol as an additive, specifically, having 1 to 4 carbon atoms. 0.1 to 1000 ppm of monohydric alcohol having a linear alkyl group or a branched alkyl group
By containing, since this alcohol suppresses the intramolecular and intermolecular interactions of the organometallic compound, the film reproducibility of the dielectric thin film formed using this solution raw material is improved,
And the surface morphology is stabilized.

[Brief description of drawings]

FIG. 1 is a diagram showing a surface morphology around a trench of a dielectric thin film formed on a substrate by using a solution raw material for forming a dielectric thin film of the present invention.

FIG. 2 is a schematic diagram of a MOCVD apparatus.

FIG. 3 is a diagram showing a surface morphology around a trench of a dielectric thin film formed on a substrate by using a conventional solution raw material for forming a dielectric thin film.

FIG. 4 is a view showing a surface morphology around a trench of a dielectric thin film formed on a substrate by using another conventional solution raw material for forming a dielectric thin film.

FIG. 5 is a view showing a surface morphology around a trench of a dielectric thin film formed on a substrate using another conventional solution raw material for forming a dielectric thin film.

[Explanation of symbols] 13 board 15 Dielectric thin film

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroto Uchida             1-297 Kitabukuro-cho, Saitama City, Saitama Prefecture             Mitsubishi Materials Corporation Research Institute (72) Inventor Katsumi Ogi             1-297 Kitabukuro-cho, Saitama City, Saitama Prefecture             Mitsubishi Materials Corporation Research Institute F-term (reference) 4K030 AA11 BA01 BA18 BA22 BA42                       EA01                 5G303 AA10 AB20 BA03 CA01 CB03                       CB06 CB18 CB21 CB25 CB32                       CB33 CB35 CB36 CB39 CD04

Claims (13)

[Claims] 1. A raw material of one or more organic metal compounds, tetrahydrofuran, methyltetrahydrofuran,
Alcohol as an additive is added to a raw material liquid prepared by mixing one or more organic solvents selected from the group consisting of n-octane, isooctane, hexane, cyclohexane, pyridine, lutidine, butyl acetate and amyl acetate. .1
A raw material solution for forming a dielectric thin film, characterized in that the raw material contains a solution of about 1000 ppm. 2. The solution raw material according to claim 1, wherein the alcohol is a monohydric alcohol having a linear alkyl group or a branched alkyl group having 1 to 4 carbon atoms. 3. The solution raw material according to claim 1, wherein the organometallic compound is a compound in which a metal atom is bonded to an organic group through an oxygen atom. 4. The solution raw material according to claim 3, wherein the organometallic compound is a compound selected from the group consisting of a metal alkoxide, a metal β-diketonato complex and a mixture of a metal alkoxide and a β-diketonato complex. 5. The alkoxide is isopropoxide or te.
The solution raw material according to claim 4, which is rt-butoxide and the β-diketonato complex is a dipivaloylmethanato complex. 6. A dipivaloylmethanato complex in which the organometallic compound is Ba and Sr, isopropoxide, tert-butoxide, dipivaloylmethanato complex, a mixture of isopropoxide and dipivaloylmethanato complex, and The solution raw material according to claim 5, comprising a Ti compound selected from the group consisting of a mixture of tert-butoxide and a dipivaloylmethanato complex, wherein the dielectric thin film is a barium strontium titanate complex oxide thin film. 7. A dipivaloylmethanato complex whose organometallic compound is Pb, a Zr compound of a β-diketone or an alkoxide, an isopropoxide, a tert-butoxide, a dipivaloylmethanato complex, an isopropoxide and a dipoxide. A dielectric thin film is a lead zirconate titanate complex oxide thin film, comprising a Ti compound selected from the group consisting of a mixture with a baroylmethanato complex and a mixture of tert-butoxide and a dipivaloylmethanato complex. The solution raw material according to 5. 8. A method of forming a complex oxide type dielectric thin film (15) on a substrate (13) by a metal organic chemical vapor deposition method using the solution raw material according to any one of claims 1 to 7. 9. The method according to claim 8, wherein the formation of the dielectric thin film by the metal organic chemical vapor deposition method is performed by supplying the solution raw material in a liquid state to the vaporization chamber. 10. The method according to claim 9, wherein separate solution raw materials for each metal are supplied to the vaporization chamber. 11. A composite oxide type dielectric thin film formed on a substrate by the method according to claim 8. 12. A dielectric thin film made of barium strontium titanate formed on a substrate by the method according to claim 8. 13. A dielectric thin film made of lead zirconate titanate formed on a substrate by the method according to claim 8.