JP2003066229A - Stripe polarizer - Google Patents
Stripe polarizerInfo
- Publication number
- JP2003066229A JP2003066229A JP2001257615A JP2001257615A JP2003066229A JP 2003066229 A JP2003066229 A JP 2003066229A JP 2001257615 A JP2001257615 A JP 2001257615A JP 2001257615 A JP2001257615 A JP 2001257615A JP 2003066229 A JP2003066229 A JP 2003066229A
- Authority
- JP
- Japan
- Prior art keywords
- striped
- light
- polarizer
- light transmissive
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Polarising Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、光通信等の送信モ
ジュールに用いられるレーザダイオードへの戻り光を防
止する目的に用いられるアイソレータの構成部品である
偏光子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polarizer, which is a component of an isolator used for the purpose of preventing return light to a laser diode used in a transmission module for optical communication or the like.
【０００２】[0002]
【従来の技術】従来、光通信、特に長距離通信等に用い
られるレーザモジュールは、出力変動の少ない、安定し
たレーザ発振が要求されているが、この安定発振を妨げ
る要因として、モジュール、ファイバー等からの戻り光
がある。この戻り光を除く部品として、偏波依存型アイ
ソレータがよく用いられている。2. Description of the Related Art Conventionally, a laser module used for optical communication, particularly long-distance communication is required to have stable laser oscillation with a small output fluctuation. There is a return light from. A polarization dependent isolator is often used as a component excluding this return light.
【０００３】このアイソレータは、偏光子、ファラデー
回転子、磁石から構成されており、これらの部材の低コ
スト化が光通信用送信モジュールの価格を低減させる上
から、大きな課題となっている。This isolator is composed of a polarizer, a Faraday rotator and a magnet, and the cost reduction of these members poses a major problem in order to reduce the price of the transmission module for optical communication.
【０００４】この解決策として、特開２０００−２８４
１１７号公報記載のグリット偏光子が、最近、新たな素
子として注目されている。このような素子が検討され始
めた背景には、半導体集積回路の微細技術の発達に伴
い、これまで、銀粒子や銅粒子の延伸によってしか得る
事のできなかった細線を、エッチング技術により得られ
るようになってきた事による。As a solution to this, Japanese Patent Laid-Open No. 2000-284
The grit polarizer disclosed in Japanese Patent Publication No. 117 has recently attracted attention as a new element. The reason why such devices have begun to be studied is that with the development of fine technology for semiconductor integrated circuits, fine lines, which could only be obtained by stretching silver particles or copper particles, can be obtained by etching technology. It started to happen.
【０００５】図４、５に示すように、光透過性基板１に
銅のグリッド細線２を形成し、これとはピッチの異なる
グリッド細線２を有する他の光透過性基板１とを互いに
対向させ、これらをＵＶ接着剤３により貼り合わせ、硬
化させることで偏光子を形成している。As shown in FIGS. 4 and 5, a copper grid thin line 2 is formed on a light transmissive substrate 1, and another light transmissive substrate 1 having grid thin lines 2 having a pitch different from this is made to face each other. A polarizer is formed by bonding these with a UV adhesive 3 and curing them.
【０００６】グリッド細線２の形成方法は、次のような
ものである。まず、イオンクリーニングを５分間行い、
基板加熱温度を２５０℃にし、銅薄膜を１０００Å蒸着
する。この上に感光レジストを塗布し、2光束干渉露光
法により平行パターンの露光を行っている。このビーム
の入射角度を変化させることにより、干渉周期を変化さ
せている。感光したレジストを現像した後、ドライエッ
チングを行ない、グリッド細線２を形成している。The method of forming the fine grid lines 2 is as follows. First, perform ion cleaning for 5 minutes,
The substrate heating temperature is set to 250 ° C. and a copper thin film is deposited by 1000Å. A photosensitive resist is applied on this, and a parallel pattern is exposed by the two-beam interference exposure method. The interference cycle is changed by changing the incident angle of this beam. After developing the exposed resist, dry etching is performed to form the grid fine lines 2.
【０００７】この偏光子の原理は、多数本の線状金属
（グリッド細線２）を一定の周期で平行に配列したグリ
ッド構造を取り、導電率の高いグリッドパターンの周期
を信号光の波長より小さくすると、線状金属に対して平
行に振動する電界ベクトルの成分（ｐ偏波）を選択的に
反射または吸収し、これに垂直な成分（ｓ偏波）は吸収
されるため、単一偏光を作り出す偏光子として機能する
のである。The principle of this polarizer is a grid structure in which a large number of linear metals (thin grid lines 2) are arranged in parallel at a constant period, and the period of the grid pattern having high conductivity is smaller than the wavelength of the signal light. Then, the component of the electric field vector (p-polarized wave) that oscillates parallel to the linear metal is selectively reflected or absorbed, and the component perpendicular to it (s-polarized wave) is absorbed, so that a single polarized light It functions as a polarizer to create.
【０００８】[0008]
【発明が解決しようとする課題】従来の構造における課
題は、２つの光透過性基板１をＵＶ樹脂３を用いて張り
合わせている点にある。１つは、ＵＶ樹脂３を用いてい
る点である。The problem in the conventional structure is that the two light-transmissive substrates 1 are bonded together by using the UV resin 3. One is that the UV resin 3 is used.
【０００９】アイソレータの価格を下げる有効な方法
は、部品の寸法を小さくする事であり、レーザのビーム
径は、現在、０．３〜１．０ｍｍφの寸法となっている
が将来は、０．１〜０．２ｍｍφに縮小されてゆくこと
が予想される。現在のレーザダイオードとの光結合パワ
ーは、５−１０ｍＷで、これを平方ｃｍ2当りに換算す
ると、０．６４〜１．２８Ｗ／ｃｍ2となる。これが、
将来的には小型化のために６４〜１２８２８Ｗ／ｃｍ2
となる。このように、光エネルギーが上がった場合、暴
露によるＵＶ樹脂３の耐光性が問題となってくるのであ
る。また、２つの光透過性基板１を平行に位置合わせし
て接続する必要があり、このため、位置合わせの方法が
困難となる事や、ＵＶ光のエネルギーの不均一性による
硬化速度の違いによる内部応力の発生から基板寸法を大
きく取る事が出来ない欠点を有している。さらに、ＵＶ
樹脂３の厚みの制御が性能に影響を与えるという欠点も
有している。An effective method of reducing the cost of the isolator is to reduce the size of the component, and the beam diameter of the laser is currently 0.3 to 1.0 mmφ, but in the future, it will be 0. It is expected that the size will be reduced to 1 to 0.2 mmφ. The current optical coupling power with the laser diode is 5 to 10 mW, which is 0.64 to 1.28 W / cm 2 when converted per square cm 2 . This is,
64-12828 W / cm 2 for miniaturization in the future
Becomes Thus, when the light energy increases, the light resistance of the UV resin 3 due to exposure becomes a problem. In addition, it is necessary to align and connect the two light-transmissive substrates 1 in parallel, which makes the alignment method difficult and causes a difference in curing speed due to non-uniformity of UV light energy. It has a drawback that the size of the substrate cannot be increased due to the generation of internal stress. Furthermore, UV
It also has a drawback that the control of the thickness of the resin 3 affects the performance.
【００１０】[0010]
【課題を解決するための手段】上記に鑑みて本発明は、
光透過性基板の片面に、金属からなる互いに平行な縞状
細線とこれを覆う光透過材料を多層に堆積し、各層間の
縞状細線を重ならないように配列した。In view of the above, the present invention provides:
On one surface of the light transmissive substrate, striped thin lines made of metal and parallel to each other and a light transmissive material covering the striped thin lines were deposited in multiple layers, and the striped thin lines between the layers were arranged so as not to overlap each other.
【００１１】縞状細線として、タングステン、モリブデ
ン、金、クロム、銀、銅、アルミニウムの少なくとも１
種を用いることとした。At least one of tungsten, molybdenum, gold, chromium, silver, copper and aluminum is used as the striped fine wire.
I decided to use seeds.
【００１２】光透過性基板として、ガラス、パイレック
ス、石英の少なくとも１種を用いることとした。At least one of glass, Pyrex and quartz is used as the light transmissive substrate.
【００１３】光透過材料として、ＳｉＯ2、Ｓｉ2Ｎ3、
Ｓｉ、ＴｉＯ2、Ｔａ2Ｏ5の少なくとも１種を用いるこ
ととした。As the light transmitting material, SiO 2 , Si 2 N 3 ,
At least one of Si, TiO 2 , and Ta 2 O 5 is used.
【００１４】[0014]
【発明の実施の形態】以下本発明の実施形態を図によっ
て説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００１５】図１、２に示すように、本発明の縞状偏光
子は、光透過性基板１の片面に第１の縞状細線５とこれ
を覆う光透過性材料４を備え、この上に第２の縞状細線
６とこれを覆う光透過性材料４を形成したものである。As shown in FIGS. 1 and 2, the striped polarizer of the present invention is provided with a first striped fine line 5 and a light transmissive material 4 covering the first striped thin line 5 on one surface of a light transmissive substrate 1, and above this. The second striped fine line 6 and the light transmissive material 4 that covers the second striped fine line 6 are formed.
【００１６】このような縞状偏光子を製造するには、光
透過性基板１に金属を蒸着、スパッタリング、あるいは
イオンプレーテイングで形成し、これにレジストを塗布
し、写真製版を行なった後、ＵＨＦ−ＥＣＲプラズマエ
ッチングにより、第１の縞状細線５を形成する。In order to manufacture such a striped polarizer, a metal is formed on the light transmissive substrate 1 by vapor deposition, sputtering or ion plating, a resist is applied to the metal, and photolithography is performed. The first striped fine line 5 is formed by UHF-ECR plasma etching.
【００１７】次に、ＣＶＤ技術により、光透過性材料４
を形成し、その上に、金属を形成し、上記と同様な方法
により、第２の縞状細線６を形成し、さらに、光透過性
材料４を上から覆い、偏光子を完成させる。この光透過
性材料４により、金属層である縞状細線が腐食から保護
される．図には示していないが、上記偏光子の両面に
は、ＡＲコートを形成し、各面での反射率を抑える構造
が取られている。Next, the light transmissive material 4 is formed by the CVD technique.
Is formed, a metal is formed thereon, and the second striped fine line 6 is formed by the same method as described above. Further, the light transmissive material 4 is covered from above to complete the polarizer. The light transmissive material 4 protects the striped thin wires, which are the metal layers, from corrosion. Although not shown in the figure, an AR coat is formed on both surfaces of the above-mentioned polarizer to have a structure for suppressing the reflectance on each surface.
【００１８】光透過性材料４の形成に当っては、その屈
折率を光透過性基板１と一致させる必要がある。それに
より、この面での反射率を抑えるためである。In forming the light transmissive material 4, it is necessary to make its refractive index the same as that of the light transmissive substrate 1. This is to suppress the reflectance on this surface.
【００１９】光透過性材料４として、ＳｉＯ2、Ｓｉ3Ｎ
4、Ｓｉ、ＴｉＯ2、Ｔａ2Ｏ5等の無機材料、レジスト、
ラミネート等、ある程度、高温に強い有機材料が適して
いる。光透過性材料４の１つとしてＳｉＯ2が考えられ
るが、このＳｉＯ2の形成方法には、高温ＣＶＤ、低温
ＣＶＤ、高圧ＣＶＤ等がある。これらの選択は、基板と
なる光透過性基板１と屈折率の値を合わせるためであ
る。As the light transmissive material 4, SiO 2 , Si 3 N
Inorganic materials such as 4 , Si, TiO 2 , Ta 2 O 5 , resists,
Organic materials that are resistant to high temperatures to some extent, such as laminate, are suitable. SiO 2 can be considered as one of the light transmissive materials 4, and the method of forming this SiO 2 includes high temperature CVD, low temperature CVD, high pressure CVD and the like. These selections are made to match the value of the refractive index with that of the light-transmissive substrate 1 serving as a substrate.
【００２０】縞状細線５，６は金属からなるものである
が、上記光透過材料４の形成に、高温ＣＶＤを用いる場
合、縞状細線５，６として高融点金属を用いることが要
求される。これは金属の変形が特性上問題となるからで
ある。一方、光透過材料４の形成に低温ＣＶＤや高圧Ｃ
ＶＤを用いる場合は、低融点金属で十分である。Although the striped thin lines 5 and 6 are made of metal, when high temperature CVD is used to form the light transmitting material 4, it is required to use a refractory metal as the striped thin lines 5 and 6. . This is because the deformation of the metal poses a problem in terms of characteristics. On the other hand, low temperature CVD or high pressure C is used to form the light transmitting material 4.
When using VD, a low melting point metal is sufficient.
【００２１】縞状細線５，６を成す高融点金属として
は、モリブデンやタングステンが上げられ、また、低融
点金属としては、金、銀、銅、Ｃｒ、アルミが上げられ
る。The refractory metal forming the striped fine wires 5 and 6 is molybdenum or tungsten, and the refractory metal is gold, silver, copper, Cr or aluminum.
【００２２】光透過性基板１としては、石英ガラス、パ
イレックス（登録商標）、その他、ＢＫ７等の一般的な
ガラスが適している。Quartz glass, Pyrex (registered trademark), and other general glasses such as BK7 are suitable for the light-transmitting substrate 1.
【００２３】また、上記第１の縞状細線５と第２の縞状
細線６は互いに重ならないようにしてあるが、これは、
回析、あるいは反射の効果を高め、縞状細線５，６に平
行に振動する電界ベクトルの成分（ｐ偏波）の選択性を
向上させるためである。The first striped thin line 5 and the second striped thin line 6 are arranged so as not to overlap each other.
This is because the effect of diffraction or reflection is enhanced and the selectivity of the component of the electric field vector (p-polarized wave) vibrating parallel to the striped thin lines 5 and 6 is improved.
【００２４】本発明の縞状偏光子では、このように縞状
細線５，６を重ならないように高精度に形成できるが、
その理由を図３を用いて説明する。In the striped polarizer of the present invention, the striped thin lines 5 and 6 can be formed with high precision so as not to overlap with each other,
The reason will be described with reference to FIG.
【００２５】図３では、光透過性基板１に第１の縞状細
線５が形成され、その上に光透過性材料４が形成され、
さらに、第２の縞状細線６を形成するための第２の金属
膜１０が形成され、不図示ではあるがレジスト膜が形成
されている。第２の金属膜１０の膜厚は薄いため、下地
の第１の縞状細線５を観測される。また、第２の金属膜
を厚くしても、第１の縞状細線５と光透過性材料４との
間には段差が生じるため、そのエッジを線状に観察する
ことが出来る。このため、第１の縞状細線５を形成して
おいた第１の合わせマーク８を容易に捕らえる事が出来
るため、このマークに合わせ、マスク７上に形成してお
いた第２の合わせマーク９が上記第１の合わせマーク８
と一致するように合わせると、マスク合わせを正確にか
つ容易に行なう事が出来る。In FIG. 3, the first striped fine line 5 is formed on the light transmissive substrate 1, and the light transmissive material 4 is formed thereon.
Further, a second metal film 10 for forming the second striped thin line 6 is formed, and a resist film is formed although not shown. Since the thickness of the second metal film 10 is thin, the first striped thin line 5 of the base is observed. Further, even if the second metal film is thickened, a step is formed between the first striped thin line 5 and the light transmissive material 4, so that the edge can be observed linearly. Therefore, the first alignment mark 8 on which the first striped thin line 5 has been formed can be easily captured, and the second alignment mark formed on the mask 7 in alignment with this mark. 9 is the above-mentioned first alignment mark 8
If the masks are aligned so as to match, the mask alignment can be performed accurately and easily.
【００２６】さらに、この第２の合わせマーク９と第１
の合わせマーク８の大きさの違いを許容寸法差とする事
（例えば、その差を０．０５μｍとする。）で、マスク
あわせした時の誤差をその範囲内に入れることが出来
る。Further, the second alignment mark 9 and the first alignment mark 9
By setting the difference in the size of the alignment mark 8 as the allowable dimensional difference (for example, the difference is set to 0.05 μm), the error when the mask is aligned can be included in the range.
【００２７】第１、第２の縞状細線５，６は、チップ寸
法に細分して作ってもよく、あるいはマスク全体を同じ
に作っても良い。また、上記実施形態では２層の例を示
したが、さらにこれらの作業を繰り返し、多層化するこ
とにより、偏光特性をさらに向上させる事が出来る。The first and second striped thin lines 5 and 6 may be subdivided into chip sizes, or the entire mask may be made the same. Further, although the example of the two layers is shown in the above-mentioned embodiment, the polarization characteristics can be further improved by repeating these operations to form a multilayer.
【００２８】縞状細線は、出来る限り、その間隔を信号
光の波長より小さくする必要があり、このため、さらに
は１／４波長以下が好ましい。例えば、１．３１μｍの
波長の場合、間隔は０．３３μｍ以下、１．５５μｍの
波長の場合、間隔は０．３９μｍ以下とすることが好ま
しい。また、細線の幅は信号の過剰損失に影響するた
め、出来る限り小さくする事が望ましく、製造技術との
兼ね合いで、０．０５〜０．１μｍとすることが好まし
い。第１の縞状細線５と、第２の縞状細線６の間隔は、
やはり、波長以下が望ましく、また、反射との対応から
１／４波長以下が好ましい。It is necessary to make the distance between the striped thin lines smaller than the wavelength of the signal light as much as possible. Therefore, it is more preferable that the striped fine lines have a quarter wavelength or less. For example, when the wavelength is 1.31 μm, the distance is preferably 0.33 μm or less, and when the wavelength is 1.55 μm, the distance is preferably 0.39 μm or less. Further, since the width of the thin line affects the excessive loss of the signal, it is desirable to make it as small as possible, and it is preferably 0.05 to 0.1 μm in consideration of the manufacturing technology. The interval between the first striped thin line 5 and the second striped thin line 6 is
After all, the wavelength is preferably equal to or less than the wavelength, and is preferably equal to or less than the quarter wavelength from the viewpoint of reflection.
【００２９】[0029]
【実施例】本発明による実施例として図１に示す縞状偏
光子を作製した。光透過性基板１として、石英ガラスを
用いた。この基板をスパッタ装置で最初、ボンバードし
て表面を清浄にした後、スパッタリングでタングステン
膜を１０００Å形成した。タングステンと石英基板の密
着性が悪い場合、間にＴｉ膜を２００Å形成する事も考
えられる。次ぎのこの基板にポジレジストを塗布し、写
真製版で、幅が０．３μｍ、間隔が０．０７μｍの窓を
形成した。この窓を用いて、ＵＨＦ−ＥＣＲプラズマエ
ッチングによりタングステン膜を除去した。この結果、
幅が０．０６μｍ、間隔が０．３１μｍの第１の縞状細
線５が出来上がった。幅が狭くなった理由は、ポジレジ
ストを用いているためである。EXAMPLE A striped polarizer shown in FIG. 1 was produced as an example according to the present invention. Quartz glass was used as the light transmissive substrate 1. This substrate was first bombarded by a sputtering device to clean the surface, and then a tungsten film of 1000 liters was formed by sputtering. When the adhesion between tungsten and the quartz substrate is poor, it is possible to form a Ti film of 200 liters between them. Next, a positive resist was applied to this substrate and photolithography was performed to form windows having a width of 0.3 μm and a spacing of 0.07 μm. Using this window, the tungsten film was removed by UHF-ECR plasma etching. As a result,
A first striped fine wire 5 having a width of 0.06 μm and an interval of 0.31 μm was completed. The reason why the width becomes narrow is that a positive resist is used.
【００３０】次に、上記基板に高温ＣＶＤで光透過材料
４をなす酸化膜を（２ｍ＋１）λ／４（λ＝１．５５μ
ｍ）の厚さ形成した。本例では、厚さを０．３９μｍと
した。Next, an oxide film forming the light transmitting material 4 is formed on the above substrate by high temperature CVD to (2m + 1) λ / 4 (λ = 1.55μ).
m) formed. In this example, the thickness was 0.39 μm.
【００３１】さらに、この上に上記と同じ方法でタング
ステン膜を形成し、図３に示す方法によりマスク合わせ
を行い、第２の縞状細線６を形成し、これを光透過材料
４をなす酸化膜で覆うこととした。マスク合わせ精度を
０．０２μｍとしているため、第１の縞状細線５と第２
の縞状細線６の合わせ精度はこの範囲に入っている。Further, a tungsten film is formed on this by the same method as described above, mask alignment is performed by the method shown in FIG. 3, a second striped fine line 6 is formed, and this is oxidized as the light transmitting material 4. It was decided to cover with a film. Since the mask alignment accuracy is 0.02 μm, the first striped thin line 5 and the second striped thin line 5
The alignment accuracy of the striped thin wire 6 is within this range.
【００３２】最後に両面に、酸化膜、ＴｉＯ2の４層膜
で反射防止膜を形成し、偏光子が完成した。得られた偏
光子の挿入損失、並びに、偏光特性を測定した所、満足
行く結果が得られている。Finally, an antireflection film was formed on both surfaces with a four-layer film of an oxide film and TiO 2 to complete a polarizer. The insertion loss of the obtained polarizer and the polarization characteristics were measured, and satisfactory results were obtained.
【００３３】従来の方法と異なるのは、２つの縞状細線
５，６の間隔を従来は、樹脂で形成しているのに対し、
本発明では光透過性材料４の形成で決定している点で、
この為、樹脂の膜厚制御に比べ格段の制御性を有してい
る。（因みに、本方式によれば、目標膜厚±５％が可能
である。）
また、２つの縞状細線５、６の位置合わせ精度は、従来
は、顕微鏡等での位置合わせでしかできないのに対し、
本発明では、マスク合わせ装置を用いることが出来るた
め、その合わせ精度は、±０．０２μｍと非常に高精度
が実現している。The difference from the conventional method is that the interval between the two striped fine wires 5 and 6 is formed of resin in the conventional method.
In the present invention, since it is determined by forming the light transmissive material 4,
Therefore, it has much more controllability than the resin film thickness control. (By the way, according to this method, a target film thickness of ± 5% is possible.) Further, conventionally, the alignment accuracy of the two striped thin lines 5 and 6 can be achieved only by alignment with a microscope or the like. As opposed to
In the present invention, since a mask alignment device can be used, the alignment accuracy is ± 0.02 μm, which is extremely high.
【００３４】[0034]
【発明の効果】このように、本発明によれば、互いに重
ならない縞状細線の層構造を採用した事によって、光透
過性基板に金属細線を蒸着、スパッタリング、イオンプ
レーテイング等で形成でき、また、光透過材料は、ＣＶ
Ｄ等で形成でき、金属細線の位置合わせをマスク合わせ
で行えるため、作成工程が容易となり、また、ＵＶ樹脂
等を用いていないため、耐光性が高く、光透過材料の厚
さもＣＶＤの膜厚制御で行えるため、性能の安定した偏
光子を提供することが出来る。As described above, according to the present invention, by adopting the layered structure of striped fine wires which do not overlap each other, it is possible to form fine metal wires on the light transmissive substrate by vapor deposition, sputtering, ion plating, etc. The light transmitting material is CV
Since it can be formed by D etc., and the alignment of the fine metal wires can be performed by mask alignment, the manufacturing process is easy, and since no UV resin or the like is used, the light resistance is high and the thickness of the light transmitting material is the thickness of the CVD film. Since it can be controlled, it is possible to provide a polarizer with stable performance.
【図１】本発明の縞状偏光子の斜視図である。FIG. 1 is a perspective view of a striped polarizer of the present invention.
【図２】本発明の縞状偏光子の断面図である。FIG. 2 is a sectional view of a striped polarizer of the present invention.
【図３】本発明の縞状偏光子の製造方法におけるマスク
合わせを説明する平面図である。FIG. 3 is a plan view illustrating mask alignment in the method for manufacturing a striped polarizer of the present invention.
【図４】従来のグリッド偏光子の斜視図である。FIG. 4 is a perspective view of a conventional grid polarizer.
【図５】従来のグリッド偏光子の断面図である。FIG. 5 is a cross-sectional view of a conventional grid polarizer.
１ 光透過性基板 ２ グリッド細線 ３ ＵＶ樹脂 ４ 光透過性材料 ５ 第１の縞状細線 ６ 第２の縞状細線 ７ 第２のマスク ８ 第１の合わせマーク ９ 第２の合わせマーク １０ 第２の金属膜 1 Light-transmissive substrate 2 grid thin lines 3 UV resin 4 Light-transmissive material 5 First striped thin wire 6 Second striped thin wire 7 Second mask 8 First alignment mark 9 Second alignment mark 10 Second metal film
Claims (4)
に平行な縞状細線とこれを覆う光透過材料とを多層に堆
積し、各層間の縞状細線を重ならないように配列したこ
とを特徴とする縞状偏光子。1. A multi-layered striped thin line made of metal and a light transmissive material covering the striped multi-layered lines are deposited on one surface of a light-transmissive substrate in a multilayer structure, and the striped thin lines between the layers are arranged so as not to overlap each other. Is a striped polarizer.
ブデン、金、クロム、銀、銅、アルミニウムの少なくと
も１種を用いることを特徴とする請求項１記載の縞状偏
光子。2. The striped polarizer according to claim 1, wherein at least one of tungsten, molybdenum, gold, chromium, silver, copper, and aluminum is used as the striped thin wire.
ックス、石英の少なくとも１種を用いることを特徴とす
る請求項１記載の縞状偏光子。3. The striped polarizer according to claim 1, wherein at least one of glass, Pyrex and quartz is used as the light transmissive substrate.
4、Ｓｉ、ＴｉＯ2、Ｔａ2Ｏ5の少なくとも１種を用いる
ことを特徴とする請求項１記載の縞状偏光子。4. The light transmissive material is SiO 2 , Si 3 N
The striped polarizer according to claim 1, wherein at least one of 4 , Si, TiO 2 , and Ta 2 O 5 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001257615A JP2003066229A (en) | 2001-08-28 | 2001-08-28 | Stripe polarizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001257615A JP2003066229A (en) | 2001-08-28 | 2001-08-28 | Stripe polarizer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003066229A true JP2003066229A (en) | 2003-03-05 |
Family
ID=19085249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001257615A Pending JP2003066229A (en) | 2001-08-28 | 2001-08-28 | Stripe polarizer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003066229A (en) |
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