JP2003062750A - Temporary placing base for substrate and substrate transferring method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temporary placing base which facilitates receipt when transferring a wafer received from the temporary placing base to the unloading cassette by a transfer robot while receiving a wafer without scratches when mounting a bearing wafer whose both surfaces are polished from a chuck mechanism onto the temporary placing base. SOLUTION: Spray flow is supplied to the upper surface of a substrate pan 92 of a temporary placing base 9b to be covered by a water film. The polished substrate maintained on the lower surface of a chuck mechanism is dropped onto the substrate pan of the temporary placing base with the spray flow supplied to the upper surface of the substrate pan. While the polishing substrate is centered by a plurality of picots 74 of a substrate centering position mechanism 70 by ascending a cylinder rod 81 of an ascent/descent mechanism 80 after washing a polishing surface of the substrate by spray flow, the polishing substrate whose outer peripheral edge is fixed with the picot. The polished and cleaned substrate is moved to a position higher than the upper part of an edge 92a elected from the outer peripheral edge of the substrate pan 92 of the temporary placing base. Then, the end part of the polished and washed substrate is held with an arm of a transfer robot so as to transfer the substrate inside the storage cassette.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temporary placement table on which a processed substrate is placed in advance at a predetermined position of a polishing apparatus after the polished substrate is ground, and the processed substrate is placed on the table.
The present invention also relates to a method of receiving a polished substrate on a temporary table from a chuck mechanism, cleaning particles adhering to the polishing surface, and transferring the polished / cleaned substrate to a storage cassette by a transfer robot.

[0002]

2. Description of the Related Art Index head type polishing apparatus is known to simultaneously polish a plurality of substrates with the same polishing platen in order to improve the productivity of polishing the substrates (shorten the substrate throughput time). (Japanese Patent Laid-Open No. 12-100
899, JP-A-2000-94305, and 2000-
94317 and 2000-164543).

In Japanese Patent Laid-Open No. 2000-94317, as shown in FIGS. 7 and 8, three polishing platens 2a,
2b, 2c and a substrate loading / unloading temporary placing table 4 reciprocating in the left and right directions on the same circumference C
The base 1 placed in the
Four chuck mechanisms 6a, 6b, 6c, 6d for holding _two substrates w ₁ , w ₂ on a head 25 supported by the base spindles 24, 24, 24, 24 are 90, 90, 90, 9
An index head 5 rotatably supported by a rotary shaft 16 which rotates in a clockwise direction by 0 degree, substrate loading cassettes 7a, 7a, and a substrate w from the substrate loading cassette on a temporary placing table 4. A transfer arm 8a for transferring the substrate, and a transfer arm 8b for transferring the polished substrate, which is transferred from the chuck mechanism 6a and placed on the temporary substrate placing table 4, to the substrate unloading cassette 7b, and a substrate cleaning nozzle 9 ',
A polishing apparatus including a dresser 3 of a polishing platen and a chuck cleaning mechanism 13 is described.

To polish a substrate using the polishing apparatus,
It is performed through the following steps. (1) The substrate w is transported from the substrate loading cassette onto the temporary placing table 4 by the transport arm 8a, the temporary placing table 4 is moved rightward and positioned below the chuck mechanism 6a, and the chuck mechanism 6a is lowered. Then, the suction plate 26 is brought into contact with the substrate on the temporary placing table 4, the pressure of the tube 21 is reduced and the substrate is sucked by the suction plate of the chuck mechanism, and then the chuck mechanism 6a is raised.

(2) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a is lowered, pressed against the first polishing platen, and
While interposing an abrasive slurry between the platen and the platen, the substrate and the first polishing platen are slid to roughly polish the substrate surface,
After the polishing is completed, the chuck mechanism 6a is raised. in the meantime,
The temporary placing table 4 moves leftward and returns to the original position, and a new substrate w is transferred from the substrate loading cassette onto the temporary placing table 4 by the transfer arm 8a, and then the temporary placing table 4 moves rightward. Then, the chuck mechanism 6b is positioned below the chuck mechanism 6b, and the chuck mechanism 6b is lowered to bring the suction plate 26 into contact with the substrate on the temporary table 4. The tube 21 is depressurized to suck the substrate to the suction plate of the chuck mechanism. The chuck mechanism 6b is raised.

(3) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a is lowered and pressed against the second polishing platen 2b, while an abrasive slurry is interposed between the substrate and the second platen,
The substrate and the second polishing platen are slid, and the substrate surface is subjected to intermediate finish polishing. In the meantime, the temporary placing table 4 moves to the left and returns to the original position, a new substrate w is transferred from the substrate loading cassette onto the temporary placing table 4 by the transfer arm 8a, and then the temporary placing table 4 moves to the right. To a position below the chuck mechanism 6c, and the chuck mechanism 6c is lowered to bring the suction plate 26 into contact with the substrate on the temporary placing table 4 and reduce the pressure of the tube 21 to suck the substrate to the suction plate of the chuck mechanism. , Then chuck mechanism 6c
Raise. Further, the chuck mechanism 6b is lowered and pressed against the first polishing platen 2a, and the substrate and the first polishing platen are slid while interposing an abrasive slurry between the substrate and the first platen to roughen the substrate surface. After polishing and after polishing, the chuck mechanism 6b is lifted.

(4) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a is lowered and pressed against the third polishing platen 2c, with an abrasive slurry interposed between the substrate and the third platen,
The substrate and the third polishing platen are slid to finish polishing the surface of the substrate. In the meantime, the temporary placing table 4 moves to the left and returns to the original position, a new substrate w is transferred from the substrate loading cassette onto the temporary placing table 4 by the transfer arm 8a, and then the temporary placing table 4 moves to the right. To a position below the chuck mechanism 6d, the chuck mechanism 6d is lowered to bring the suction plate 26 into contact with the substrate on the temporary placing table 4, and the pressure of the tube 21 is reduced to suck the substrate to the suction plate of the chuck mechanism. Then, the chuck mechanism 6d is raised. Further, the chuck mechanism 6b is lowered to move the second
While pressing the polishing platen and interposing an abrasive slurry between the substrate and the second platen, the substrate and the second polishing platen are slid to polish the surface of the substrate to the intermediate finish, and after the polishing, the chuck mechanism 6b is finished. Raise. On the other hand, the chuck mechanism 6c
Is lowered and pressed against the first polishing platen 2a, and the substrate and the first polishing platen are slid while the abrasive slurry is interposed between the substrate and the first platen to roughly polish the substrate surface,
After the polishing is completed, the chuck mechanism 6c is raised.

(5) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
After a is lowered onto the temporary placing table 4 and the decompression of the tube 21a is stopped and the substrate is placed on the temporary placing table 4, the chuck mechanism 6a is raised. After the cleaning liquid is sprayed on the substrate of the temporary table 4, the temporary table 4 moves to the right, and the finish-polished substrate on the temporary table 4 is transferred to the substrate unloading cassette 7b by the transfer arm 8b. Stored in a wet condition. Then, the temporary placing table 4 is moved leftward and returned to the original position, and a new substrate w is transferred from the substrate loading cassette onto the temporary placing table 4 by the carrying arm 8a, and then the temporary placing table 4 is moved rightward. To the position below the chuck mechanism 6a.
Then, a is lowered to bring the suction plate 26 into contact with the substrate on the temporary placing table 4, the pressure of the tube 21 is reduced to suck the substrate to the suction plate of the chuck mechanism, and then the chuck mechanism 6a is raised. Meanwhile, the chuck mechanism 6b is pressed against the third polishing platen 2c, and the polishing slurry is interposed between the substrate and the third platen, and the substrate and the third polishing platen are slid to finish polishing the substrate surface. To do. On the other hand, the chuck mechanism 6c is lowered and pressed against the second polishing platen, and the polishing slurry is interposed between the substrate and the second platen, and the substrate and the second polishing platen are slid to move the surface of the substrate inside. After finishing polishing, the chuck mechanism 6c is raised after the polishing is completed. Also, the chuck mechanism 6d is lowered and pressed against the first polishing platen 2a, and while the abrasive slurry is interposed between the substrate and the first platen, the substrate and the first polishing platen are slid to move the substrate surface. After the rough polishing, and after finishing the polishing, the chuck mechanism 6d is raised.

(6) In the following step (5), that is, the rotary shaft 16 of the index head 5 is rotated clockwise by 90 degrees.
Rotation, to unload / load the board,
The steps of finish polishing, intermediate finish polishing, and rough polishing are repeated.

The index head type polishing apparatus using these three polishing platens has an advantage that the throughput time of substrate polishing can be shortened to 2 to 4 minutes / sheet.

In order to set the throughput time of 1 to 3 minutes / sheet, the inventors of the present invention used substrate cleaning, substrate unloading, chuck mechanism cleaning, substrate cleaning in the conventional index head type polishing apparatus. It was found that the work time in the unloading / loading stage, which performs a series of loading operations, is rate-determining, and the work in the unloading / loading stage is equipped with a temporary stand. It was found and proposed that a polishing apparatus that can further reduce the throughput time can be provided by allocating it to the index table (Japanese Patent Application No. 2000-289710).

Further, there is also known a temporary placing table itself which, after polishing a substrate, waits at a predetermined position of a polishing device in advance, places the polished substrate and cleans the lower surface of the substrate with a water stream, and at the same time centering the substrate. (JP-A-61-168439, JP-A-61-168438, JP-A-5-102114, JP-B-60-22500,
7-22880, JP-A-10-303152).

In order to increase the degree of integration and miniaturization of memory devices, the diameter of substrates has been increased (from 200 mm to 300 mm or 400 mm) and the pattern size has been reduced. Conventionally, flatness (SFQ
Regarding R), the flatness of the wiring (patterning) width or less is required for the substrate from the viewpoint of the control of the film forming process such as lithography, and the flatness (SFQR) was conventionally 0.25 μm or less. Recently, as described above, a substrate having a flatness (SFQR) of 0.13 μm or less is required.

For example, a substrate having a diameter of 200 mm and a storage capacity of 1
For megabit (1M) DRAM, the pattern size was 1.0 to 0.8 μm, but it was 0.5 μ for 4M.
m, 16M 0.35μm, 64M 0.25μm, 2
56M 0.18 μm, 300 mm diameter substrate, 16M storage capacity DRAM, the pattern size was 0.25 μm, 64M 0.18 μm, 256M 0.
A pattern size of 13 μm is required (“Introduction to Visual Technology-All about Semiconductors”, Chapter 1-12, 3).
6-39, March 5, 1999, Nihon Jitsugyo Publishing Co., Ltd. 4th edition).

As a method of manufacturing a substrate having excellent flatness, Japanese Patent Laid-Open No. 9-97775 discloses that a disk-shaped substrate obtained by cutting a silicon ingot is chamfered, and then both surfaces of the substrate are subjected to primary mirror polishing. Then, a method of manufacturing a substrate for single-side finish polishing is proposed.

Further, Japanese Patent Laid-Open No. 9-270397 discloses
We propose a method of manufacturing a substrate through the following steps. (1) an ingot cutting step of cutting (slicing) an ingot to obtain a substrate (wafer), (2) a surface grinding step of surface grinding the front surface or the back surface of the cut substrate,
(3) Alkaline etching step of etching the surface-ground substrate with an alkaline solution (2
(Resolving processing strain of 10 μm depth), (4) Chamfering step of chamfering the peripheral edge of the alkali-etched substrate
(5) A polishing step of polishing the front and back surfaces of the chamfered substrate.

Further, US Pat. No. 5,963,821 proposes a method of manufacturing a substrate by passing through the following steps. (1) Ingot cutting step of slicing an ingot to obtain a substrate (wafer), (2) Step of flattening the substrate by lapping, (3) Alkaline etching step of etching the substrate with an alkaline solution, (4) ) A double-sided polishing step of polishing the front and back surfaces of the substrate.

In order to increase the diameter and the degree of integration of the substrate, both sides of the substrate (bare wafer) are polished, and one of the polished faces is finish-polished so that the front and back can be distinguished.
Wafers having a diameter of 00 mm or more tend to be used.

[0019]

In a conventional temporary placing table for centering a substrate with a water stream, a porous ceramic plate is used as a saucer material of the temporary placing table so that the water stream blows out from the surface of the temporary placing table. Further, in the temporary placing table for centering the substrate with the arm, in order to vacuum-adsorb the substrate, a porous ceramic plate is also used as the saucer material of the temporary placing table, and when the polishing substrate is placed on the temporary placing table, A water film is formed on the surface of the porous ceramic plate so that the substrate surface is not scratched.

However, when the surface flatness of the substrate is improved and the diameter of the substrate is as large as 300 mm or more, the substrate surface is sucked by the suction pad and the substrate surface is moved even if the substrate is moved from the temporary stand. The surface tension of the water film is large and it is difficult to move. In particular, it has been found that the substrate is damaged when it is as thin as 30 to 120 μm.

The first aspect of the present invention provides a temporary placing table which does not damage the surface of the polishing substrate and does not allow foreign matter to adhere to the substrate, and which can easily transport the polishing substrate from the temporary placing table. To do. 2 of the present invention receives a polished substrate from a chuck mechanism of a polishing apparatus,
It is intended to provide a method of carrying a substrate which has been cleaned and then polished and cleaned in the next step.

[0022]

According to a first aspect of the present invention, after polishing a substrate, the substrate is made to stand by at a predetermined position of a polishing device in advance and the polished substrate held on the lower surface of the chuck mechanism is dropped. The temporary placement table 9b is a platform on which the substrate 9b is placed, and the temporary placement table 9b has a raised edge portion 92a on the outer peripheral edge on the upper part of the cylindrical leg 91, and the central portion 92b is lower than the outer peripheral portion 92c. A substantially disk-shaped bottom plate 92 having a step 92d is provided, and a plurality of picos 74, 74, 74, 74, 74 are provided with holes 93, 93 of a size capable of moving up and down inside the outer peripheral edge of the substantially disk-shaped bottom plate 92. , 93, 93, 93 are provided on the same circumference 100, and have an annular leg 94a higher than the step 92d, and a plurality of jet outlets 94b, 94b, 94b, 94b, on the side wall forming the leg. The bottom plate with the lid 94 provided with 94b. A substrate tray 90 that covers the central portion 92b on the inside of the step, and a substrate tray 90 in which a fluid introduction hole 92e is provided in a part of a substantially disc-shaped bottom plate 92 that is covered by the lid 94, and the substrate tray 90. Cylinder rod 81 can be moved up and down in the cylindrical leg of, and an elevating mechanism 80 is installed such that the axis A of the rod and the axis B of the substrate tray 90 are on the same line. Extending radially to
Opening 91 provided in the cylindrical leg 91 of the substrate tray 90
Cylindrical leg 9 through a, 91a, 91a, 91a, 91a
1 a plurality of arms 72, 72, 72, 72, extending to the outside
A plate-shaped mounting metal fitting 73 having 72 is horizontally fixed to the cylinder rod tip 81a of the lifting mechanism, and a pico 74 having a conical head 74a and a cylindrical leg 74b near the tip of each arm, 74, 74, 74, 74, 74 were vertically erected so that the conical head portion 74a of the pico was located above the upper surface of the hole 93 provided in the substantially disc-shaped bottom plate 92 of the substrate tray 90. The substrate centering / positioning mechanism 70 and a scraper for supplying a fountain flow to the fluid introduction hole 92e for guiding the fluid to the fluid passage 61 constituted by the substantially disc-shaped bottom plate 92 of the substrate tray 90 and the lid 94. The provisional stand for a substrate including the mechanism 60 is provided.

According to a second aspect of the present invention, a fountain flow is supplied to the upper surface of the substrate tray 92 of the temporary placing table 9b to form a water film, and the fountain flow is supplied to the upper surface of the substrate tray on the lower surface of the chuck mechanism. The held polished substrate is dropped onto the substrate tray of the temporary table, the polishing surface of the substrate is washed with a jet of water, and then the cylinder rod 81 of the elevating mechanism 80 is raised to raise the substrate centering and positioning mechanism. 70 Pico 7
The polishing substrate is centered by 4, 74, ..., and the polishing substrate whose outer peripheral edge is fixed by a pico is polished and washed to a position higher than the upper portion of the edge portion 92a standing up from the outer peripheral edge of the substrate tray 90 of the temporary placing table. The substrate is moved, and then the edge of the polished / cleaned substrate is transferred to the transfer robot.
The present invention provides a method of transporting a substrate, characterized in that the substrate, which is grasped by a wafer and transported to the storage cassette, is polished and washed.

When a thin double-sided polishing substrate is dropped onto the tray of the temporary placing table by the chuck mechanism, a water film is stretched on the tray and the fountain jets are ejected from a plurality of places, so that the substrate surface is exposed. Does not get scratched. Since the thickness of the substrate is small, the substrate rarely falls in parallel with the bottom plate of the saucer, and generally falls obliquely. A plurality of jets of water provided on the same circumference moderate the angle of the oblique drop, and the jets of water and the water film wash the surface of the substrate to wash away particles adhering to the surface.

The fountain flow jetted from the jet outlet provided on the annular leg side wall of the lid collides with the wall of the step provided on the pan bottom plate of the temporary stand, and spreads horizontally with the jet flow directed upward. Efficiently divides into the vector to form the film.

Even if the center of the polished substrate is deviated from the center of the tray of the temporary placing table, the cylinder rod of the elevating mechanism is raised to center the polished substrate by the plurality of pico of the substrate centering and positioning mechanism. Will be held,
The substrate is accurately gripped by the arm of the transfer robot. In addition, the presence of the fountain flow when the substrate rises from the temporary placement table facilitates the separation of the substrate from the water film. Further, when the substrate is gripped by the arm of the transfer robot, the substrate is gripped by the pico at a position higher than the upper end of the edge of the tray of the temporary placing table, so that the arm of the transfer robot can easily grip the substrate.

[0027]

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described in detail below with reference to the drawings. In each drawing, in each stage of the polishing apparatus, the chuck mechanism under the index head is supported by eight spindles, which are multiples of four, so that two substrates can be simultaneously processed and cleaned. A polishing apparatus having a chuck mechanism will be taken as an example. FIG. 1 is a plan view of a polishing apparatus provided with a temporary table of the present invention, and FIG. 2 is a first view of the polishing apparatus in FIG.
6 is a front view of the polishing stage portion, FIG. 3 is a sectional view of the chuck mechanism, FIG. 4 is a sectional view of the temporary placing table as seen from the line II of FIG. 5, FIG. 5 is a plan view of the temporary placing table, and FIG. Is I in FIG.
It is a top view of the temporary stand seen from the I-II line.

The polishing apparatus 30 shown in FIGS. 1 and 2 has four head spindles, which are supported by a rotary shaft at the upper portion thereof, and four spindles provided at equal intervals on the same circumference with the rotary shaft 16 as the center. Attached substrate chuck mechanism 6a, 6
b, 6c, 6d, a rotating mechanism for rotating the rotating shaft of the index head clockwise by 90 degrees, 90 degrees, 90 degrees, 90 degrees or by 90 degrees, 90 degrees, 90 degrees, -270 degrees. ,

Elevating mechanisms 34, 34 for raising and lowering the spindle of the substrate chuck mechanism, mechanisms M ₁ , M ₂ for horizontally rotating the spindle, and the index head so as to face below the four substrate chuck mechanisms. 5, the substrate loading / substrate unloading / chuck cleaning stage s ₁ and the first polishing stage s ₁ are provided at equal intervals on the same circumference from the center point where the axis of the rotary shaft 5 is the same. ₂ , the second polishing stage s ₃ and the third polishing stage s ₄ ,

On the upper surface, the first temporary placing stands 9a, 9 for loading are mounted.
a, an index table 9 in which the cleaning mechanism 13 for the substrate chuck mechanism and the second temporary placing tables 9b, 9b for unloading are provided at equal intervals on the same circumference, and the index table
A rotating mechanism (not shown) for rotating the bull 9 in the clockwise direction alternately by 120 degrees and 240 degrees, or alternately by 120 degrees and −120 degrees, and

Substrate loading cassettes 7a and substrate loads provided on the left and right sides of the front of the index table.
A substrate supply mechanism including a loading and transporting robot 8a, a substrate discharging mechanism including a substrate unloading cassette 7b and a substrate unloading and transporting robot 8b, a water tank 7c,
It is a substrate polishing apparatus 30 including:

In FIG. 1, 1 is a base, 2a is a first polishing platen, 2b is a second polishing platen, 2c is a third platen,
3, 3, 3 are dressers for the polishing platen, 3a, 3a, 3
Reference numeral a denotes a rotary shaft, and 9a 'and 9b' denote the centering mechanism of the temporary table with the substrate tray removed. In FIG. 1, the substrate loading / substrate unloading under the index head 5 is performed.
Chucking mechanisms 13 and 13 provided on the index table 9 on the ding / chuck cleaning stages 6a and 6a.
Shows the state in which is located.

Below the index head 5 are four walls 1.
It is partitioned by w, 2w, 3w, and 4w, and has four stages on the base 1, namely, substrate loading / substrate unloading / chuck cleaning stage s ₁ , first polishing stage s ₂ , The second policing stage s ₃ and the third policing stage s ₄ are allocated.

The cleaning mechanism 13 includes a chuck mechanism 6a,
Nozzles 13a for spraying the cleaning liquid on 6b, 6c, 6d,
13a, chuck mechanism bottom surface cleaning brushes 13b, 13b,
A chuck mechanism side surface cleaning brush 13c and a nozzle 13d for spraying a cleaning liquid onto the brush 3b are provided.

In FIG. 2, 10 is a spindle for supporting the polishing platen 2, and M ₄ is a motor for giving a driving force for rotating the polishing platen in the horizontal direction. 11 is a polishing cloth.
The chuck mechanisms 6a, 6b, 6c, 6d are assembled by a pair of spindles, and are arranged on the index head 5 supported by the rotary shaft 16 on the same circumference C about the axis O of the rotary shaft 16 as a base. 1, heads 25 are mounted on eight spindles 24, respectively. Rotating the rotary shaft 16 by a motor (not shown) clockwise by 90, 90, 90, 90 degrees or clockwise by 90, 90, 90, -270 degrees. Index head 5 and two substrates w ₁ , w
8 chuck mechanisms 6a, 6b, 6c, 6 for holding ₂
d is 90, 90, 90, 90 degrees or 90, 9
Rotate clockwise by 0, 90 and -270 degrees.

Eight chuck mechanisms 6a, 6a, 6b, 6b, 6c, 6c, 6d, 6d under the index head 5
Is moved to the substrate loading / unloading / chuck mechanism cleaning stage s1, the first polishing stage s2, the second polishing stage s3 and the third polishing stage s4 by the rotation of the index head. Distributed

On the base 1 side, on the same circumference C from the center point O which is the same as the axis of the rotary shaft 16 of the index head 5 so as to face the lower part of the eight chuck mechanisms.
Substrate provided at equal intervals in Russia - loading / unload - loading / chuck mechanism washed stearyl - di s _1, first policing stearyl - di s _2, the second polishing stearyl - di s ₃ and a third
A polishing stage s ₄ is provided. Substrate loading / unloading / chuck mechanism cleaning stage s ₁
1, the chuck cleaning stages 13 and 13 are shown in FIG. 1, and the first polishing stage s ₂ has a first platen 2a having a polishing cloth adhered to the surface of the rotary table and abrasive grains on the surface of the polishing platen. The abrasive slurry supply pipe 50 containing
The polishing stage s ₃ includes a second platen 2b having a polishing cloth attached to the surface of the rotary table and an abrasive slurry supply pipe 50 containing abrasive grains on the surface of the polishing platen, and a third polishing stage s3. At s ₄ , a third platen 2 c having a polishing cloth adhered to the surface of the rotary table and an abrasive slurry supply pipe 50 containing abrasive grains are provided on the surface of the polishing platen.

As the polishing cloth of the polishing platen, hard foamed urethane sheet, polyfluorinated ethylene sheet, polyester fiber non-woven fabric, felt, polyvinyl alcohol alcohol fiber non-woven fabric, nylon fiber non-woven fabric, and foamable urethane resin on these non-woven fabrics. A solution in which the solution is cast and then foamed and cured is used. Usually, the polishing cloth of the first platen is harder and has a rougher surface than the polishing cloths of the second platen and the third platen.

The index Te - table 9 b at equal intervals on a concentric circle around the axial center O ₁ on the upper surface - loading first provisional table 9a, 9a, unload - second provisional table 9 for loading
b, 9b and chuck mechanism cleaning stages 13, 13 (see FIG. 1). The index table 9 supported by the spindle is rotated clockwise by 120 degrees and 240 degrees in the horizontal direction or by 120 degrees and -120 degrees by the AC servo actuator.

The structure of the head 25 of the chuck mechanism 6 is, as shown in FIG. 3, a bowl-shaped main body portion 601 supported by a hollow spindle shaft, and a flexible body horizontally fixed to the lower end portion of the bowl-shaped main body portion. A diaphragm 602 made of a flexible material, and a gas passage 60 vertically provided in a central portion fixed to the diaphragm.
3, a rigid support plate 605 having a concave portion 604 formed to communicate with the gas passage portion on the lower surface, means for supplying and discharging the gas in the gas passage, the inside of the bowl-shaped main portion and the upper surface side of the diaphragm. A means for supplying gas to the pressurizing chamber 606, which is formed by the method described above, and a flexible film 607 made of rubber or the like on the lower surface of the rigid support plate.
A substrate carrier part having a flexible film attached so as to form a highly airtight space of 1 to 0.3 mm, and attached to the lower outer peripheral edge of the rigid support plate so as to project from the lower surface of the flexible film. Head structure of a substrate carrier including an annular holding ring 608, a side wall of the annular holding ring 609, a substrate storage pocket 609 formed by the lower surface of the flexible film, and a height position adjusting mechanism 610. 105305
No.).

In the head of the substrate carrier, when the gas passage 603 is depressurized, a negative pressure is generated between the substrate and the flexible film 607, and the substrate on the first temporary placing table 9a is held (chucked) by the flexible film. . Further, during holding and polishing of the substrate, the back surface of the substrate is always backed by the flexible film, so that the substrate is not scratched. During polishing of the substrate, pressurized air can be supplied to the gas passage portion 603 to increase the pressure of the substrate on the polishing platen.

When the substrate is dropped from the chuck mechanism onto the tray of the second temporary placing table 9b, pressurized air is supplied to the gas passage portion 603 to expand the flexible film 607.

As shown in FIGS. 4 to 6, the temporary unloading stand 9b of the present invention is provided on the upper part of the cylindrical leg 91.
A substantially disc-shaped bottom plate 92 having a raised edge portion 92a on the outer peripheral edge and a central portion 92b having a lower step 92d than the outer peripheral portion 92c is provided. Holes 93, 93, 93, 93, 93 of a size capable of raising and lowering a plurality of picos 74, 74, 74, 74, 74 are provided on the same circumference 100, and an annular leg 94a higher than the step 92d. And a base plate 90 having a lid body 94 having a plurality of jet outlets 94b, 94b, 94b, 94b, 94b formed on the side wall forming the leg, and covering the step inner side central portion 92b of the bottom plate 92. A substrate tray 90 in which a fluid introduction hole 92e is provided in a part of a substantially disc-shaped bottom plate 92 covered with the lid 94,

An elevating mechanism installed so that the cylinder rod 81 can move up and down in the cylindrical leg of the substrate tray 90, and the axis A of the rod and the axis B of the substrate tray 90 are on the same line. 80,

It extends radially from the central disc-shaped portion 71 to the outside of the cylindrical leg 91 through openings 91a, 91a, 91a, 91a, 91a provided in the cylindrical leg 91 of the substrate tray 90. A plurality of arms 72, 72, 72,
A plate-shaped mounting bracket 73 having 72, 72 is horizontally fixed to the cylinder rod tip 81a of the lifting mechanism,
A pico 74, 74, 74, 74, 74, 74, 74 having a conical head 74a and a leg 74b in the vicinity of the tip of the column is erected vertically, and the conical head 74a of the pico serves as the substrate tray 9
No. 0 substantially disk-shaped bottom plate 92, the board centering positioning mechanism 70 provided so as to be positioned above the upper surface of the hole 93, and

The scraper mechanism 6 for supplying a fountain flow to the fluid introduction hole 92e for guiding the fluid to the fluid passage 61 formed by the substantially disc-shaped bottom plate 92 of the substrate tray 90 and the lid 94.
It consists of 0. In the figure, reference numeral 60a is a fountain flow hole of a scraper mechanism, 60b is a stopper, 95 is a screw for closing a lid, 96 is a seal plate, 97 is a cylinder bracket, 98 is a board confirmation sensor, and 99 is a bush. is there.

The bottom plate 92 of the rigid resin substrate tray 90, the raised edge portion 92a, and the lid 94 are made of polyvinyl chloride, ABS, polymethyl methacrylate, epoxy resin, phenol resin, polyacetate. A resin plate having a high rigidity such as resin and poly (tetrafluoroethylene) is used.

The substrate is moved to the second position from the head 25 of the chuck mechanism.
When the water is dropped on the tray of the temporary placing table 9b, a water jet is applied to the upper surface of the substrate tray 92 of the temporary placing table 9b from the scraper mechanism 60 to form a water film, and the fountain stream is supplied to the upper surface of the substrate tray. Pressurized air is supplied to the gas passage 603 of the chuck mechanism to expand the flexible film 607 and drop it on the pan of the temporary placing table 9b, and then the polishing surface of the substrate is washed with a jet of water and then lifted. By raising the cylinder rod 81 of the mechanism 80, the plurality of picos 74 of the substrate centering and positioning mechanism 70,
The polishing substrate is centered by 74, ... And the polishing substrate whose outer peripheral edge is fixed by a pico is positioned higher than the upper portion of the edge portion 92a standing up from the outer peripheral edge of the substrate tray 90 of the temporary placing table (shown by a virtual line in FIG. 4). Move the polished / cleaned substrate to the pico position.

Next, the edge of the polished / washed substrate is held by the arm of the transfer robot 8b, and the polished / washed substrate is transferred into the storage cassette 7b.

When 25 substrates are stored in the storage cassette 7b, the storage cassette 7b is lowered into the water tank 7c, immersed in water, and then the storage cassette 7b is raised to be carried to the place of the next process.

On the other hand, the first loading table 9a for loading has a centering mechanism in which a cushioning material sheet made of polyvinyl alcohol porous material or polymer hydrogel is laminated on the surface of a highly rigid resin tray. A temporary table provided (see Japanese Patent Application No. 2001-20857) is used.

Examples of the hydrophilic cushioning material sheet include polysilicon hydrogel (for example, hydrogel sold under the trade name of GEL sheet by Sigel Co., Ltd.), polyvinylpyrrolidone hydrogel, xanthan gum hydrogel, collagen hydrogel. , Agar, dextran hydrogel, carrageenan hydrogel, tragacanth gum hydrogel,
Flexibility of polymer hydrogels such as hydrophilic polymer gels such as glycosaminoglycan hydrogel and polyvinyl alcohol type porous sheets (for example, sponges sold by Kanebo Ltd. under the trade name of Berklin) , An elastic polymer sheet is used. Of these, a polyvinyl alcohol-based porous sheet is preferable in terms of impact absorption when the chuck mechanism and the substrate come into contact with each other. The thickness of the cushioning material sheet is preferably 5 to 15 mm.

The polyvinyl alcohol type porous sheet is
Polyvinyl formal is produced by a formalization reaction in which formaldehyde is rarely used as a catalyst in partially or completely saponified polyvinyl alcohol having a degree of polymerization of 200 to 3,000 to form a polyvinyl formal, in which case a bubble generating agent is added to form bubbles. After forming a porous body insoluble in water in the mold,
A bubble diameter of 80 to 300 μm produced by extracting an acid, a bubble generating agent and unreacted formaldehyde,
It is an open-cell body having a bubble rate of 85 to 98% by volume. The highly rigid resin for the material of the saucer can be selected from the same materials as the saucer material of the temporary placing table 9b.

[0054] Index Te - Hollow table 9 - Dinguzo - With emissions Z _1, B - B from loading cassette 7a - loading transport robot 8a takes out a substrate, A - conveying the beam after the reversal, on the provisional table 9a, After placing the board on the temporary stand,
Positioning (centering) is performed by lowering the air cylinder of the positioning device. Unload - Dinguzo - With emissions Z _2, unload comprises a H-shaped gripper - receive a substrate loading transport robot 8b is polished from the provisional table 9b, unload - transporting the substrate in a loading cassette 7b. As already mentioned, the unloading cassette 7
b is provided so as to be able to move up and down in the water tank 7c (JP 2000
-100900), the polished substrate is always kept wet by immersing the cassette 7b in a water bath.

Using the polishing apparatus 30, the two substrates w ₁ and w ₂ held by the heads 25 and 25 supported by the respective spindles 24 and 24 are pressed against the same polishing platen 2 to polish the substrate and the substrate. While the polishing liquid 51 is interposed between the platen and the platen, the substrate and the polishing platen are slid to simultaneously
The surface of the substrate is polished. The number of rotations of the spindles 24, 24 is 30 to 100 rpm, and the number of rotations of the polishing platen is 30.
~ 100 rpm, pressing 50 against the polishing platen of the substrate
~ 400 g / cm ² .

To polish a substrate using the polishing apparatus shown in FIG. 1, the following steps are performed. 1) Steps on the index table 9: (1) The substrate w is held by the transfer robot 8a from the substrate loading cassette 7a, the arm is retracted, the arm is reversed, and then the index table is moved. - zone on table 9 - first provisional table 9a located down Z _1, after placing the substrate on a 9a, for centering the positioning mechanism.

[0057] During this time, the index Te - zone on table 9 - second provisional table 9b located down Z _2, 9b receives a polishing substrate which has been dropped from the chuck mechanism in pan, wash the polished surface by a fountain flow Then, after the substrate is centered by raising the pico, the substrate is gripped by the unloading transfer robot 8b and the arm is reversed,
It is conveyed into the unloading cassette 7b. Also,
In zone Z ₃ on index table 9, nozzle 1
The cleaning liquid is sprayed from 3a and 13d and the brush is rotated to clean the front surface and the side surface of the chuck mechanism that does not hold the substrate with the cleaning device 13.

[0058] (2) Index tape - is rotated 120 degrees Bull 9 clockwise, zone scrubber - to down _{Z 2,} a second provisional table 9b which substrate has been removed, the 9b zone - down _{Z 1} What,
The first provisional table 9a carrying the substrate, zone a 9a - moves to down _{Z 3.} Then, zone - in emissions Z _3, provisional table 9a lowers the chuck mechanism 6a, is brought into contact with the suction plate 26 to the substrate on 9a, a supply (gas passage 603 in the chuck mechanism shown in FIG. 9) the tubes 21 The pressure is reduced to adsorb the substrate to the lower end surface of the chuck mechanism, and then the chuck mechanisms 6a, 6a are raised.
Spindle 16 of the index head is 90 degrees or -270 degrees rotated clockwise, zone - chuck mechanism 6d holding the polishing substrate to the emission Z _3, leads to 6d, is lowered chuck mechanism 6d, the 6d, provisional table After placing the polishing substrate on 9a, 9a, chuck mechanisms 6d, 6d are raised.

[0059] When the chuck mechanism is raised, the index Te - 9 240 ° Bull, in the same direction, or rotated to 120 degrees opposite direction, the first provisional table 9a zone - the emissions _{Z 1,} second
Zone the provisional table 9b - the emissions _{Z 2,} the cleaning system 13 zone - down Z ₃
Return to.

Thereafter, the process returns to the step (1), and the steps (1) and (2) are repeated.

2) Process with the index head: (1) The chuck mechanisms 6a, 6a are lowered to bring the flexible film 607 of the chuck mechanism into contact with the substrates on the temporary mounting tables 9a, 9a on the index table 9. Then, the chuck mechanism depressurizes the gas passage portion 603 to adsorb the substrate to the lower end surface of the chuck mechanism, and then raises the chuck mechanisms 6a, 6a. Then, the index table 9 is rotated 240 degrees or -120 degrees in the clockwise direction.

(2) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a, 6a are lowered and pressed against the first polishing platen 2a,
While the abrasive slurry is interposed between the substrate and the first platen, the substrate and the first polishing platen are slid to roughly polish the substrate surface, and after the polishing is completed, the chuck mechanisms 6a, 6a are raised. In the meantime, the chuck mechanisms 6d, 6d are lowered to bring the flexible film 607 of the chuck mechanism into contact with a new substrate on the temporary table 9a, 9a on the index table 9 to depressurize the gas passage portion 603. The substrate is attracted to the lower end surface of the chuck mechanism, and then the chuck mechanisms 6d and 6d are raised. Then, the index table 9 is rotated 240 degrees or -120 degrees in the clockwise direction.

(3) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a and 6a are lowered and pressed against the second polishing platen 2b,
While the abrasive slurry is interposed between the substrate and the second platen, the substrate and the second polishing platen are slid to polish the surface of the substrate for intermediate finishing, and after the polishing is completed, the chuck mechanisms 6a, 6a are raised. Further, the chuck mechanisms 6d, 6d are lowered, pressed against the first polishing platen, and the substrate and the first polishing platen are slid while interposing an abrasive slurry between the substrate and the first polishing platen 2a. The substrate surface is roughly polished, and after the polishing is completed, the chuck mechanism 6b is raised. In the meantime, the chuck mechanisms 6c, 6c are lowered so that the suction plate 26 is attached to a new substrate on the temporary placing tables 9a, 9a on the index table 9.
Are brought into contact with each other to reduce the pressure of the tube 21 (gas passage 603 in the chuck mechanism shown in FIG. 9) to adsorb the substrate to the lower end surface of the chuck mechanism, and then raise the chuck mechanisms 6c, 6c. After that, the index table 9 is rotated clockwise by 120 degrees or -240 degrees, and the chuck mechanism 6 is rotated.
b, 6b below the temporary table 9b on the index table 9,
Position the substrate on 9b.

(4) Rotating shaft 16 of index head 5
After turning 90 degrees clockwise, the chuck mechanism 6
a and 6a are lowered and pressed against the third polishing platen 2c,
While the polishing slurry is interposed between the substrate and the third polishing platen, the substrate and the third polishing platen are slid to finish polish the surface of the substrate, and after the finish polishing, the chuck mechanism 6a is lifted. In addition, the chuck mechanisms 6d, 6d are lowered and pressed against the second polishing platen 2b, and the polishing slurry is interposed between the substrate and the second platen while the substrate and the second platen are held together.
The polishing platen is slid to polish the surface of the substrate for intermediate finishing, and after the polishing is completed, the chuck mechanisms 6d, 6d are raised. Also, the chuck mechanisms 6c, 6c are lowered, pressed against the first polishing platen 2a, and the substrate and the first polishing platen are slid while interposing an abrasive slurry between the substrate and the first polishing platen. The substrate surface is roughly polished, and after the polishing is completed, the chuck mechanisms 6c, 6c are raised.

In the meantime, the chuck mechanisms 6b, 6b are lowered to bring the suction plate 26 into contact with a new substrate on the temporary table 9b, 9b on the index table 9, and the tube 21 (in the chuck mechanism shown in FIG. 9, The gas passage 603) is decompressed to adsorb the substrate to the lower end surface of the chuck mechanism, and then the chuck mechanisms 6b, 6b are raised. After that, the index table
The bull 9 is rotated clockwise by 240 ° or −120 °.

(5) Rotating shaft 16 of index head 5
Is rotated clockwise by -270 degrees, the chuck mechanisms 6a, 6a are moved to the temporary table 9 on the index table 9.
a, 9a to stop the pressure reduction of the pipe 21a (the gas passage 603 in the chuck mechanism shown in FIG. 9), and then the pipe 2
1a (gas passage 603 in the chuck mechanism shown in FIG. 9)
After the compressed substrate is supplied to place the polishing substrate on the temporary placing tables 9a, 9a, the chuck mechanisms 6a, 6a are raised. The lower end surface 25 (60 in FIG. 9) of the lifted chuck mechanisms 6a, 6a.
7) and on the side, the nozzles 13a, 13d of the cleaner 13
The cleaning liquid is sprayed more and the chuck mechanism is cleaned by rotating the brushes 13b and 13c. Then, the index table 9 is rotated clockwise by 120 degrees to position the substrates on the temporary mounting tables 9b and 9b on the index table 9 under the chuck mechanisms 6a and 6a. In the finish-polished substrate, the index table 9 is 1 as described above.
20 degree rotation to index Te - Bull zone - after being migrated to down Z _2, by the transfer robot 8b unload - is conveyed to loading storage cassette 8b.

In the meantime, the chuck mechanisms 6d and 6d are lowered and pressed against the third polishing platen 2c, and the substrate and the third polishing platen are held while the abrasive slurry is interposed between the substrate and the third polishing platen. The surface of the substrate is slid to finish polishing, and after finishing polishing, the chuck mechanisms 6d and 6d are lifted. In addition, the chuck mechanisms 6c and 6c are lowered to move the second
After pressing the polishing platen 2b and interposing an abrasive slurry between the substrate and the second polishing platen, the substrate and the second polishing platen are slid to perform intermediate finish polishing of the substrate surface, and after the intermediate finish polishing is completed. , The chuck mechanisms 6c, 6c are raised. Also, the chuck mechanisms 6b, 6b are lowered and pressed against the first polishing platen 2a, and the substrate and the first polishing platen are slid while interposing an abrasive slurry between the substrate and the first polishing platen. The substrate surface is roughly polished, and after the polishing is completed, the chuck mechanisms 6b, 6b are raised.

(6) Hereinafter, as described in the step (5) above,
The rotation shaft 16 of the index head 5 is rotated, and the steps of substrate unloading / loading, rough polishing, intermediate finish polishing, finish polishing, and chuck mechanism cleaning are repeated. The sharpening of the polishing cloth 11 of the polishing platens 2a, 2b, 2c of the polishing apparatus is restored by rotating the dresser 3 about the rotation shaft 3a.

[0069]

The temporary unloading table for polishing substrate of the present invention can receive the substrate dropped from the chuck mechanism without damaging the substrate due to the presence of the water film and the jet flow. Further, since the temporary placing table is provided with the centering mechanism / elevating mechanism, it can be easily grasped by the transfer robot.

[Brief description of drawings]

FIG. 1 is a plan view of a polishing apparatus provided with a temporary table of the present invention.

FIG. 2 is a partial front view of a first polishing stage of the polishing apparatus shown in FIG.

FIG. 3 is a sectional view of the head structure of the chuck mechanism.

FIG. 4 is a sectional view of a temporary placing stand for unloading.

FIG. 5 is a plan view of a temporary placing stand for unloading.

FIG. 6 is a plan view of the temporary placing table viewed from the line II-II in FIG.

FIG. 7 is a plan view of a polishing apparatus (known).

FIG. 8 is a front view of a polishing apparatus (known).

[Explanation of symbols]

1 base w board 2 Polishing platen 5 index heads 6 Chuck mechanism 7a loading cassette 7b Unloading cassette 8a, 8b transfer robot 9 index table 9a First temporary stand 9b Second temporary stand 11 polishing cloth 30 polishing equipment 60 scraper mechanism 70 Substrate centering mechanism 72 Arm 73 Mounting bracket 74 pico 80 Lifting mechanism 90 board saucer 92 Disc-shaped bottom plate

Claims (2)

[Claims] 1. A temporary stand for placing a polished substrate, which is held on the lower surface of the chuck mechanism in advance at a predetermined position of the polishing apparatus after the substrate has been polished and drops the substrate. The temporary placing table 9b has a substantially disc-shaped bottom plate 92 having a raised edge portion 92a on the outer peripheral edge on the upper part of the cylindrical leg 91 and a central portion 92b having a step 92d lower than the outer peripheral portion 92c. And a plurality of picos 74, 74 inside the outer peripheral edge of the substantially disc-shaped bottom plate 92.
Are provided on the same circumference 100 and have a ring-shaped leg 94a higher than the step 92d, and a plurality of jet blows are formed on the side wall forming the leg. The lid 94 provided with the outlets 94b, 94b ...
Of the substrate tray 90 in which the central portion 92b inside the step is covered, and the fluid introduction hole 92e is provided in a part of the substantially disc-shaped bottom plate 92 covered by the lid 94. The cylinder rod 81 can move up and down in the cylindrical leg, and the axial center A of the rod and the substrate tray 9
Elevating mechanism 80 installed so that the axis B of 0 is on the same line, extending radially from the center 71 in the outer peripheral direction, and the substrate tray 9
A plurality of arms 72, 72 ... Which extend outside the cylindrical leg 91 through the openings 91a, 91a.
A plate-like mounting metal fitting 73 having the above is horizontally fixed to the cylinder rod tip 81a of the elevating mechanism, and the head 74a is conical and the leg 74b is cylindrical in the vicinity of the tip of each arm.
4, 74 ... Stand vertically and the conical head 74 of the pico
a is a hole 9 formed in the substantially disc-shaped bottom plate 92 of the substrate tray 90.
3. Substrate centering and positioning mechanism 70 provided so as to be located above the upper surface, and the fluid introduction for guiding the fluid to the fluid passage 61 constituted by the substantially disc-shaped bottom plate 92 of the substrate tray 90 and the lid 94. Hole 92
A temporary placing base for a substrate, which comprises a scrubber mechanism 60 for supplying a fountain flow to e. 2. A polishing process in which a fountain flow is supplied to the upper surface of the substrate tray 92 of the temporary placing table 9b to form a water film, and the fountain flow is supplied to the upper surface of the substrate tray and held on the lower surface of the chuck mechanism. The substrate thus prepared is dropped onto the substrate tray of the temporary placing table, and the polishing surface of the substrate is washed with a jet of water, and then the lifting mechanism 80 is used.
The cylinder rod 81 is raised to center the polishing substrate by the plurality of picos 74, 74, ... Of the substrate centering / positioning mechanism 70, and the polishing substrate whose outer peripheral edge is fixed by the pico is used as the substrate tray 90 of the temporary stand. The polished / washed substrate is moved to a position higher than the upper part of the edge portion 92a standing upright from the outer peripheral edge, and then the edge of the polished / washed substrate is grasped by the arm of the transfer robot and placed in the storage cassette. A method of transporting a substrate, which comprises transporting a polished / cleaned substrate.