JP2003051620A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JP2003051620A JP2003051620A JP2001240084A JP2001240084A JP2003051620A JP 2003051620 A JP2003051620 A JP 2003051620A JP 2001240084 A JP2001240084 A JP 2001240084A JP 2001240084 A JP2001240084 A JP 2001240084A JP 2003051620 A JP2003051620 A JP 2003051620A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- emitting element
- emitting device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体発光装置に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device.
【０００２】[0002]
【従来の技術】チップ型半導体発光装置を例に従来の半
導体発光装置について説明する。図４は、従来の一般的
なチップ型半導体装置の斜視図である。このチップ型半
導体発光装置では、平面視長矩形状をしたチップ基板１
の上面長手方向両端にそれぞれ電極部２，２’が形成さ
れている。一方の電極部２のチップ基板１の表面側には
チップボンディング部（不図示）が形成され、ここに半
導体発光素子３がボンディングされている。もう一方の
電極２’の表面側にはワイヤボンディング部（不図示）
が形成され、半導体発光素子３の上面電極（不図示）と
ボンディングワイヤ４によって結線されている。そし
て、半導体発光素子３およびボンディングワイヤ４は透
光性樹脂５で封止されている。2. Description of the Related Art A conventional semiconductor light emitting device will be described by taking a chip type semiconductor light emitting device as an example. FIG. 4 is a perspective view of a conventional general chip type semiconductor device. In this chip-type semiconductor light emitting device, a chip substrate 1 having a rectangular shape in plan view is used.
Electrode portions 2 and 2'are formed on both ends of the upper surface in the longitudinal direction, respectively. A chip bonding portion (not shown) is formed on the surface side of the chip substrate 1 of the one electrode portion 2, and the semiconductor light emitting element 3 is bonded thereto. Wire bonding part (not shown) on the surface side of the other electrode 2 '
Are formed and are connected to the upper surface electrode (not shown) of the semiconductor light emitting element 3 by the bonding wire 4. Then, the semiconductor light emitting element 3 and the bonding wire 4 are sealed with a translucent resin 5.
【０００３】このようなチップ型半導体発光装置におい
て、チップ基板１は一般にビスマレイミドトリアジン樹
脂（ＢＴレジン）、あるいはガラス繊維などを含有した
エポキシ樹脂で形成されていた。このためチップ基板１
の色相は一般に乳白色であった。一方、チップ基板１上
に形成される電極部２，２’は、電解メッキなどにより
Ｃｕ，Ｎｉ，Ａｕの各層が積層形成された構成のものが
多く、ボンディング性の点から最外層はＡｕ層としてい
ることが多かった。このため電極部２，２’の色相は金
色であった。In such a chip type semiconductor light emitting device, the chip substrate 1 is generally formed of a bismaleimide triazine resin (BT resin) or an epoxy resin containing glass fiber or the like. Therefore, the chip substrate 1
Was generally milky white. On the other hand, the electrode portions 2 and 2'formed on the chip substrate 1 often have a structure in which Cu, Ni, and Au layers are laminated and formed by electrolytic plating or the like, and the outermost layer is the Au layer from the viewpoint of bonding property. Was often said. Therefore, the hue of the electrode portions 2 and 2'was golden.
【０００４】[0004]
【発明が解決しようとする課題】半導体発光素子３から
発せられた光の大半は透光性樹脂５を通って直接外部へ
出射するが、その一部はチップ基板１および電極部２，
２’に当たって反射して外部へ出射する。このとき前記
のように、チップ基板１は乳白色であるため半導体発光
素子３からの光の大部分はそのまま反射されるのに対
し、電極部２，２’は金色であるため半導体発光素子３
からの光の一部は電極部２，２’で吸収される。このた
め半導体発光装置の発光効率が低下していた。Ａｕの色
相には黄味が混じっているため青色が吸収されやすく、
半導体発光素子として青色発光素子を用いた場合に特に
発光効率の低下が問題となっていた。Most of the light emitted from the semiconductor light emitting element 3 is directly emitted to the outside through the transparent resin 5, but a part of the light is emitted to the chip substrate 1 and the electrode portion 2.
It hits 2'and is reflected and emitted to the outside. At this time, as described above, since the chip substrate 1 is milky white, most of the light from the semiconductor light emitting element 3 is reflected as it is, whereas the electrode portions 2 and 2 ′ are gold and the semiconductor light emitting element 3 is
A part of the light from is absorbed by the electrode parts 2 and 2 '. Therefore, the light emitting efficiency of the semiconductor light emitting device has been reduced. Since the hue of Au is mixed with yellow, blue is easily absorbed,
When a blue light emitting element is used as the semiconductor light emitting element, a decrease in luminous efficiency has been a problem.
【０００５】本発明はこのような従来の問題に鑑みてな
されたものであり、半導体発光素子からの光が電極部で
吸収されるのを防止し、半導体発光装置の発光効率を向
上させることをその目的とするものである。The present invention has been made in view of the above conventional problems, and it is possible to prevent light from a semiconductor light emitting element from being absorbed by an electrode portion and improve the luminous efficiency of a semiconductor light emitting device. That is the purpose.
【０００６】[0006]
【課題を解決するための手段】本発明によれば、電極部
が形成された基板上に半導体発光素子を実装した半導体
発光装置において、前記電極部の表面に反射層を設けた
ことを特徴とする半導体発光装置が提供される。According to the present invention, in a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a substrate on which an electrode portion is formed, a reflective layer is provided on the surface of the electrode portion. Provided is a semiconductor light emitting device.
【０００７】ここで前記半導体発光素子が青色発光素子
であって、前記電極部の最外層がＡｕ層である場合に本
発明の効果が特に奏される。さらには、青色発光素子の
中でも下面に電極を形成できるＳｉＣ系発光素子の場合
に高い効果が得られる。The effect of the present invention is particularly exerted when the semiconductor light emitting element is a blue light emitting element and the outermost layer of the electrode portion is an Au layer. Further, among the blue light emitting elements, a SiC-based light emitting element in which an electrode can be formed on the lower surface is highly effective.
【０００８】半導体発光装置の発光効率をさらに向上さ
せる観点から、半導体発光素子を実装した側の基板表面
にも反射層を設けるのがよい。From the viewpoint of further improving the luminous efficiency of the semiconductor light emitting device, it is preferable to provide a reflective layer also on the surface of the substrate on which the semiconductor light emitting element is mounted.
【０００９】[0009]
【発明の実施の形態】半導体発光素子からの光が電極部
で吸収されることなく反射されるようにするため本発明
者が鋭意検討を重ねた結果、電極部に反射層を設ければ
よいという一見単純な着想ながらこれまで試みられてい
なかった着想に基づき本発明をなすに至った。以下、図
に基づき本発明を詳述する。BEST MODE FOR CARRYING OUT THE INVENTION As a result of intensive studies by the present inventors in order to reflect light from a semiconductor light emitting element without being absorbed by an electrode portion, a reflective layer may be provided on the electrode portion. The present invention has been accomplished based on the seemingly simple idea, which has not been tried until now. Hereinafter, the present invention will be described in detail with reference to the drawings.
【００１０】図１は、本発明の半導体発光装置の一実施
態様を示す斜視図である。図１の半導体発光装置はチッ
プ型であって、その基本構成は図４に示した前述の従来
の半導体発光装置と同じであるのでその説明は省略し、
従来の半導体発光装置と異なる部分について説明する。FIG. 1 is a perspective view showing an embodiment of the semiconductor light emitting device of the present invention. The semiconductor light emitting device of FIG. 1 is of a chip type, and its basic configuration is the same as that of the conventional semiconductor light emitting device shown in FIG.
The parts different from the conventional semiconductor light emitting device will be described.
【００１１】図１の半導体発光装置では、Ｃｕ，Ｎｉ，
Ａｕの各層が電解メッキにより順に積層形成された電極
部２，２’がチップ基板１上に形成されている。もちろ
ん電極部２，２’の材質および構成はこれに限定される
ものではない。そして電極部２，２’の最外層であるＡ
ｕ層の表面には白色樹脂からなる反射層６が形成されて
いる。In the semiconductor light emitting device of FIG. 1, Cu, Ni,
Electrode portions 2 and 2 ′ in which Au layers are sequentially laminated by electrolytic plating are formed on a chip substrate 1. Of course, the materials and configurations of the electrode portions 2 and 2'are not limited to this. And A which is the outermost layer of the electrode parts 2, 2 '
A reflective layer 6 made of a white resin is formed on the surface of the u layer.
【００１２】電極部２，２’上に形成する反射層６は、
半導体発光素子３から発せられた光を反射する層であれ
ばよく、例えば白色樹脂を塗布したものの他、ＡｌやＡ
ｇといった白色系金属を箔として貼着またはメッキした
ものでもよい。白色樹脂としては例えば酸化チタンなど
の白色顔料や白色染料をエポキシ樹脂などの樹脂に分散
混合したものが例示される。なお、チップ基板の上面を
透光性樹脂で封止する場合には、百数十度程度まで加熱
するので、白色顔料や染料を分散混合する樹脂はこの加
熱に耐えるものである必要がある。電極部に白色樹脂を
塗布する方法としては、例えばシルク印刷、吹き付け、
刷毛塗り、カーテンフローコータ、グラビアコート、ロ
ールコート、バーコートなどの従来公知の方法を用いる
ことができる。The reflective layer 6 formed on the electrode portions 2 and 2'is
Any layer may be used as long as it is a layer that reflects the light emitted from the semiconductor light emitting element 3. For example, a layer coated with white resin, Al or A
A white metal such as g may be attached or plated as a foil. Examples of the white resin include a white pigment such as titanium oxide or a white dye dispersed and mixed in a resin such as an epoxy resin. When the upper surface of the chip substrate is sealed with a translucent resin, it is heated to about a hundred and several tens of degrees, and therefore the resin in which the white pigment and the dye are dispersed and mixed must withstand this heating. As a method of applying the white resin to the electrode portion, for example, silk printing, spraying,
Conventionally known methods such as brush coating, curtain flow coater, gravure coating, roll coating and bar coating can be used.
【００１３】白色系金属をメッキして電極部２，２’上
に反射層６を形成する場合には、化学蒸着や無電解メッ
キなどの化学メッキ、真空蒸着、スパッタ蒸着、イオン
プレーティングなど従来公知の方法でメッキを行うこと
ができる。When the reflective layer 6 is formed on the electrode portions 2, 2'by plating a white metal, chemical plating such as chemical vapor deposition or electroless plating, vacuum vapor deposition, sputter vapor deposition, ion plating, etc. The plating can be performed by a known method.
【００１４】図１の半導体発光装置では、反射層６は、
半導体発光素子３を実装した基板側の電極部上にのみ形
成され、基板１の側面および裏面の電極部には形成され
ていない。基板１の側面および裏面は半導体発光素子３
からの光がそもそも当たらないからである。もちろん、
生産性などの理由から基板１の側面および裏面の電極部
表面に反射部６を形成しても構わない。また、反射層６
が絶縁性である場合には、電極部２，２’上のワイヤボ
ンディング領域および半導体発光素子ボンディング領域
には、反射層６を形成せずに電極部２，２’を露出させ
ておく必要がある。In the semiconductor light emitting device of FIG. 1, the reflective layer 6 is
It is formed only on the electrode portion on the substrate side on which the semiconductor light emitting element 3 is mounted, and is not formed on the electrode portions on the side surface and the back surface of the substrate 1. The semiconductor light emitting element 3 is provided on the side surface and the back surface of the substrate 1.
This is because the light from the room does not hit the ground. of course,
For reasons such as productivity, the reflection portion 6 may be formed on the side surface and the back surface of the electrode portion of the substrate 1. In addition, the reflective layer 6
Is insulative, it is necessary to expose the electrode portions 2 and 2 ′ without forming the reflective layer 6 in the wire bonding region and the semiconductor light emitting element bonding region on the electrode portions 2 and 2 ′. is there.
【００１５】反射層６の層厚としては半導体発光素子３
からの光を反射できる厚みであれば特に限定はなく、一
般に数μｍ〜数百μｍ程度が好ましい。The thickness of the reflective layer 6 is the semiconductor light emitting device 3
There is no particular limitation as long as it is a thickness that can reflect the light from the above, and generally about several μm to several hundreds μm is preferable.
【００１６】図１の半導体発光装置のチップ基板１は、
ガラス繊維を含有したエポキシ樹脂で形成されているの
でその色相は乳白色である。このため半導体発光素子３
からの光の大部分を反射する。しかし、チップ基板１に
よっては白色系でないものもある。このようなチップ基
板を用いる場合には反射効率を高めるため、少なくとも
半導体発光素子３を実装した側の基板表面に、電極部
２，２’と同様に反射層６を設けるのが望ましい。な
お、基板表面に形成する反射層は絶縁性である必要があ
る。The chip substrate 1 of the semiconductor light emitting device of FIG.
Since it is made of epoxy resin containing glass fiber, its hue is milky white. Therefore, the semiconductor light emitting device 3
Reflects most of the light from. However, some chip substrates 1 are not white. When such a chip substrate is used, in order to improve the reflection efficiency, it is desirable to provide the reflective layer 6 at least on the substrate surface on which the semiconductor light emitting element 3 is mounted, similarly to the electrode portions 2 and 2 ′. The reflective layer formed on the surface of the substrate needs to be insulative.
【００１７】本発明で用いる半導体発光素子には特に限
定はなく、従来公知のものが使用できる。例えば、Ｇａ
Ｎ系やＳｉＣ系などの青色発光素子や、ＧａＡｓ系、Ａ
ｌＧａＡｓ系、ＡｌＧａＩｎＰ系、ＩｎＰ系などの赤色
発光素子や緑色発光素子などが挙げられる。ここで、半
導体発光素子が青色発光素子で、電極部の最外層がＡｕ
層である場合には、Ａｕ層に青色が吸収されて発光効率
が特に悪くなるので、この場合には本発明の構成にすれ
ば発光効率が一段と高くなる。青色発光素子の中でも、
ＳｉＣ系発光素子の場合には発光素子の下面に電極を形
成できるので発光素子を電極部上に直接固着できる。こ
のため、電極部のＡｕ層による青色吸収の影響が大き
く、本発明の効果が顕著に現れる。一方、ＧａＮ系発光
素子は、その製法上、サファイヤのような絶縁性の基板
にｐ形層・ｎ形層が積層された構造となるので半導体発
光素子の下面に電極を形成できない。このため発光素子
を電極部上に直接固着することができず、通常はチップ
基板上に固着している。したがってこの種の発光素子の
場合には電極部のＡｕ層による青色吸収の影響は少なく
本発明の構成による効果は低い。The semiconductor light emitting element used in the present invention is not particularly limited, and conventionally known ones can be used. For example, Ga
N-based or SiC-based blue light-emitting element, GaAs-based, A-based
Examples include red light emitting elements such as 1GaAs type, AlGaInP type, and InP type and green light emitting elements. Here, the semiconductor light emitting element is a blue light emitting element, and the outermost layer of the electrode portion is Au.
In the case of a layer, the blue light is absorbed by the Au layer and the light emission efficiency is particularly deteriorated. Therefore, in this case, the structure of the present invention further increases the light emission efficiency. Among the blue light emitting elements,
In the case of a SiC-based light emitting element, since an electrode can be formed on the lower surface of the light emitting element, the light emitting element can be directly fixed on the electrode portion. Therefore, the influence of blue absorption by the Au layer of the electrode portion is large, and the effect of the present invention is remarkable. On the other hand, the GaN-based light emitting device has a structure in which the p-type layer and the n-type layer are laminated on an insulating substrate such as sapphire due to its manufacturing method, and therefore an electrode cannot be formed on the lower surface of the semiconductor light-emitting device. For this reason, the light emitting element cannot be fixed directly on the electrode portion, but is usually fixed on the chip substrate. Therefore, in the case of this type of light emitting element, the influence of blue absorption by the Au layer of the electrode portion is small and the effect of the configuration of the present invention is low.
【００１８】このようなチップ型半導体発光装置は例え
ば次のようにして作製される。チップ型装置の製造工程
図の一例を図２に示す。銅箔２１を両面に貼着した絶縁
性基板１に金型やルータで複数本のスリット１１を設け
て複数本の桟１２を形成する（同図（ａ））。そしてフ
ォトレジストの塗布・露光・現像を行って、電極部の上
面部と下面部となる電極パターン部分をフォトレジスト
で被覆し、このレジストパターンをエッチレジストとし
て不要部分の銅箔２１をエッチングにより除去する（同
図（ｂ））。次に、無電解メッキにより端子電極の側面
部となる桟の側面にＣｕ層２２を形成する（同図
（ｃ））。そして、桟１２の側面を含む電極パターン部
分にＣｕ，Ｎｉ，Ａｕの各層２３を電解メッキにより積
層形成する（同図（ｄ））。次に、半導体発光素子およ
びボンディングワイヤのボンディング領域を除いて、電
極部の上面部となる電極パターン部分に白色樹脂をシル
ク印刷により塗布し反射層６を形成する（同図
（ｅ））。Such a chip type semiconductor light emitting device is manufactured as follows, for example. An example of a manufacturing process diagram of the chip type device is shown in FIG. A plurality of slits 11 are provided in the insulating substrate 1 having copper foils 21 adhered on both sides by a mold or a router to form a plurality of crosspieces 12 (FIG. 11A). Then, a photoresist is applied, exposed, and developed to cover the electrode pattern portions serving as the upper surface portion and the lower surface portion of the electrode portion with the photoresist, and the unnecessary portion of the copper foil 21 is removed by etching using this resist pattern as an etch resist. ((B) in the figure). Next, the Cu layer 22 is formed on the side surface of the crosspiece, which is the side surface portion of the terminal electrode, by electroless plating (FIG. 7C). Then, each layer 23 of Cu, Ni, and Au is laminated and formed on the electrode pattern portion including the side surface of the crosspiece 12 by electrolytic plating ((d) of the same figure). Next, except for the bonding region of the semiconductor light emitting element and the bonding wire, white resin is applied by silk printing to the electrode pattern portion which is the upper surface of the electrode portion to form the reflection layer 6 (FIG. 8E).
【００１９】上記のように作製した絶縁性基板１に対
し、各桟１２における一方の電極部２上の反射層６が形
成されていない領域に、それぞれ半導体発光素子３をボ
ンディングする。そして、各半導体発光素子３の上面電
極（不図示）ともう一方の電極部２’上の反射層６が形
成されていない領域との間をボンディングワイヤ４によ
って結線する（同図（ｆ））。この状態の平面図を図３
に示す。そして、各桟１２にその長手方向に並ぶ各チッ
プボンディング部の全てに半導体発光素子３をボンディ
ングし、かつ所定のワイヤボンディングを行った後、例
えばトランスファモールド法によって各桟１２の上面を
その長手方向に透光性樹脂５で一連に覆って封止体を形
成する（図２（ｇ））。そしてダイシングなどで一定長
さごとに桟を切断して図１に示したチップ型半導体発光
装置を得る。On the insulating substrate 1 manufactured as described above, the semiconductor light emitting element 3 is bonded to each of the bars 12 in the region on the one electrode portion 2 where the reflection layer 6 is not formed. Then, the upper surface electrode (not shown) of each semiconductor light emitting element 3 and a region of the other electrode portion 2'in which the reflective layer 6 is not formed are connected by a bonding wire 4 (FIG. 6 (f)). . A plan view of this state is shown in FIG.
Shown in. Then, after the semiconductor light emitting element 3 is bonded to all of the chip bonding portions arranged in the longitudinal direction on each crosspiece 12 and a predetermined wire bonding is performed, the upper surface of each crosspiece 12 is attached to the top surface of each crosspiece 12 by the transfer molding method, for example. Then, a series of light-transmissive resins 5 is covered to form a sealing body (FIG. 2G). Then, the crosspiece is cut into pieces at a constant length by dicing or the like to obtain the chip-type semiconductor light emitting device shown in FIG.
【００２０】本発明の半導体発光装置は例えば液晶表示
装置のバックライト、光ファイバ通信用やフォトカプラ
用などの装置内の点光源、家電機器における表示器など
に用いられる。The semiconductor light emitting device of the present invention is used, for example, as a backlight of a liquid crystal display device, a point light source in a device for optical fiber communication or a photo coupler, a display in a home electric appliance, and the like.
【００２１】[0021]
【発明の効果】本発明の半導体発光装置では、電極部を
形成した基板上に半導体発光素子を実装し、電極部の表
面には反射層を設けたので、半導体発光素子から発せら
れた光が電極部で吸収されることがなくなり、発光効率
を向上させることができる。In the semiconductor light emitting device of the present invention, the semiconductor light emitting element is mounted on the substrate on which the electrode portion is formed, and the reflective layer is provided on the surface of the electrode portion, so that the light emitted from the semiconductor light emitting element is prevented. It is not absorbed by the electrode portion, and the luminous efficiency can be improved.
【００２２】特に、半導体発光素子が青色発光素子であ
って、電極部の最外層がＡｕ層である場合に発光効率が
格段に向上する。In particular, when the semiconductor light emitting element is a blue light emitting element and the outermost layer of the electrode portion is an Au layer, the luminous efficiency is remarkably improved.
【図１】 本発明の半導体発光装置の一例を示す斜視図
である。FIG. 1 is a perspective view showing an example of a semiconductor light emitting device of the present invention.
【図２】 本発明の半導体発光装置の製造例を示す工程
図である。FIG. 2 is a process drawing showing a manufacturing example of a semiconductor light emitting device of the present invention.
【図３】 製造工程の中間体を示す平面図である。FIG. 3 is a plan view showing an intermediate body in a manufacturing process.
【図４】 従来の半導体発光装置を示す斜視図である。FIG. 4 is a perspective view showing a conventional semiconductor light emitting device.
１ チップ基板（基板） ２、２’ 電極部 ３ 半導体発光素子 ４ ボンディングワイヤ ５ 透光性樹脂 ６ 反射層 1 chip substrate (substrate) 2, 2'electrode part 3 Semiconductor light emitting device 4 Bonding wire 5 Translucent resin 6 reflective layer
Claims (2)
素子を実装した半導体発光装置において、 前記電極部の表面に反射層を設けたことを特徴とする半
導体発光装置。1. A semiconductor light emitting device in which a semiconductor light emitting element is mounted on a substrate having an electrode portion formed thereon, wherein a reflective layer is provided on a surface of the electrode portion.
って、前記電極部の最外層がＡｕ層である請求項１記載
の半導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is a blue light emitting element, and the outermost layer of the electrode portion is an Au layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001240084A JP2003051620A (en) | 2001-08-08 | 2001-08-08 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001240084A JP2003051620A (en) | 2001-08-08 | 2001-08-08 | Semiconductor light-emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011062178A Division JP2011146735A (en) | 2011-03-22 | 2011-03-22 | Method for manufacturing semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003051620A true JP2003051620A (en) | 2003-02-21 |
Family
ID=19070747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001240084A Pending JP2003051620A (en) | 2001-08-08 | 2001-08-08 | Semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003051620A (en) |
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