JP2003051599A5 - - Google Patents

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Publication number
JP2003051599A5
JP2003051599A5 JP2002145644A JP2002145644A JP2003051599A5 JP 2003051599 A5 JP2003051599 A5 JP 2003051599A5 JP 2002145644 A JP2002145644 A JP 2002145644A JP 2002145644 A JP2002145644 A JP 2002145644A JP 2003051599 A5 JP2003051599 A5 JP 2003051599A5
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JP
Japan
Prior art keywords
electrode
channel formation
regions
impurity
insulating film
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Application number
JP2002145644A
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English (en)
Japanese (ja)
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JP2003051599A (ja
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Priority to JP2002145644A priority Critical patent/JP2003051599A/ja
Priority claimed from JP2002145644A external-priority patent/JP2003051599A/ja
Publication of JP2003051599A publication Critical patent/JP2003051599A/ja
Publication of JP2003051599A5 publication Critical patent/JP2003051599A5/ja
Withdrawn legal-status Critical Current

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JP2002145644A 2001-05-24 2002-05-21 半導体装置及び電子機器 Withdrawn JP2003051599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002145644A JP2003051599A (ja) 2001-05-24 2002-05-21 半導体装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-156178 2001-05-24
JP2001156178 2001-05-24
JP2002145644A JP2003051599A (ja) 2001-05-24 2002-05-21 半導体装置及び電子機器

Publications (2)

Publication Number Publication Date
JP2003051599A JP2003051599A (ja) 2003-02-21
JP2003051599A5 true JP2003051599A5 (enExample) 2005-09-15

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Family Applications (1)

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JP2002145644A Withdrawn JP2003051599A (ja) 2001-05-24 2002-05-21 半導体装置及び電子機器

Country Status (1)

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JP (1) JP2003051599A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541614B2 (en) * 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP2004297048A (ja) * 2003-03-11 2004-10-21 Semiconductor Energy Lab Co Ltd 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法
EP1607931B1 (en) 2003-03-26 2014-01-08 Semiconductor Energy Laboratory Co., Ltd. Device substrate and light-emitting device
JP4689188B2 (ja) * 2003-04-25 2011-05-25 株式会社半導体エネルギー研究所 表示装置
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
US7898623B2 (en) * 2005-07-04 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device and method of driving display device
JP4611829B2 (ja) * 2005-07-19 2011-01-12 東北パイオニア株式会社 自発光パネルの製造方法、および自発光パネル
KR101189152B1 (ko) * 2005-09-16 2012-10-10 삼성디스플레이 주식회사 어레이 기판과, 이를 구비한 액정표시패널 및 액정표시장치
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
US7746444B2 (en) * 2006-06-26 2010-06-29 Lg Display Co., Ltd. Array substrate, liquid crystal display device having the same, and manufacturing method thereof
KR102251817B1 (ko) 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101907366B1 (ko) * 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101819197B1 (ko) * 2010-02-05 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
TWI690085B (zh) * 2013-05-16 2020-04-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
US9461126B2 (en) * 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
KR102481037B1 (ko) 2014-10-01 2022-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선층 및 그 제작 방법
US20160155759A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US10186618B2 (en) * 2015-03-18 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6815122B2 (ja) * 2015-08-07 2021-01-20 株式会社半導体エネルギー研究所 表示パネル
WO2017115214A1 (en) * 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
CN112271216B (zh) * 2020-09-18 2023-04-07 宁波大学 一种具有串联操作功能的三输入FinFET
US20240023371A1 (en) * 2020-12-07 2024-01-18 Semiconductor Energy Laboratory Co., Ltd. Method For Fabricating Display Apparatus

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