JP2003046238A - Ceramic wiring board and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic wiring board which is equipped with a wiring part whose surface can be easily turned functional, smoothed or reduced in resistance. SOLUTION: A ceramic wiring board has a laminated structure composed of ceramic dielectric layers 50 and metal layers 30 and 80 which are alternately laminated. The metal wiring layer 80 is formed of a sintered layer as a whole and composed of a plurality of metal layers 81 and 82 laminated in the direction of thickness, and the adjacent metal layers 81 and 82 are formed of dissimilar metals.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic wiring board, and more particularly to a ceramic wiring board suitable for high frequencies.

[0002]

2. Description of the Related Art Conventionally, wiring boards such as LSIs and ICs
Alternatively, a multilayer ceramic wiring board capable of relatively high-density wiring is often used as a wiring board on which semiconductor elements such as discrete parts are mounted or various thick film printing elements are formed inside the board. This multilayer ceramic wiring board includes a ceramic dielectric layer made of alumina or glass ceramic and Cu, Ag, W, M.
Metal wiring layers made of metal such as o are alternately laminated, and a semiconductor element is mounted on the surface thereof as required. Recently, high-frequency bands from the microwave band to the millimeter-wave band have been actively adopted for wireless communication such as mobile phones in order to measure expansion of radio resources and high transmission capacity. As a component for a wireless communication device used in the above, a demand for a wiring board for handling a high frequency signal is explosively increasing.

In a high-frequency board, it is important that transmission loss of high-frequency signals does not occur as much as possible. In particular, the metal wiring layer incorporated in the board is required to have an impedance in the high-frequency band as small as possible. . For example,
Since a high frequency signal is mainly transmitted in the skin portion in the metal wiring layer, it is effective to reduce the impedance of the metal wiring layer by finishing the surface as smooth as possible. For example, Japanese Patent Laid-Open No. 2001-15878 proposes a method of regulating the surface roughness of the interface between the metal wiring layer embedded in the substrate and the ceramic dielectric layer to 0.3 μm or less. Regarding the metal wiring layer exposed on the surface of the substrate, a method of covering the surface of the wiring layer with a smooth electroless plating layer such as Ni / Au is generally adopted.

[0004]

Problems to be Solved by the Invention
In Japanese Patent Laid-Open No. 78, a technique of transferring a circuit pattern from a metal foil by using a photolithography technique is adopted in order to obtain a smooth metal wiring portion. However, this method is significantly inferior in cost and efficiency as compared with the technique using screen printing with a metal paste, and the facility renewal cost for converting the printing process to the photolithography process is enormous. On the other hand, in the method in which the surface of the metal wiring layer exposed on the substrate surface is covered with an electroless plating layer such as Ni / Au, the outermost surface has a low electric resistivity A.
Since it is u and can be configured as a plated layer having high smoothness, it is more effective in reducing loss in the high frequency region of the wiring portion. However, since the plating technique is adopted, it can be applied only to the wiring portion formed on the outermost surface of the substrate, and the effect cannot be enjoyed in the wiring portion embedded in the substrate. In addition, when defects such as uneven plating, sagging, or non-plating are likely to occur, and the ceramic dielectric is made of glass-ceramic, the glass component becomes There is also a risk that the transmission characteristics will be deteriorated due to the corrosion of the liquid.

An object of the present invention is to provide a ceramic wiring board which can easily realize a wiring portion having a functionalized surface layer portion such as smoothing and low resistance, and a manufacturing method thereof.

[0006]

Means for Solving the Problems and Actions / Effects The present invention relates to a ceramic wiring board in which ceramic dielectric layers and metal wiring layers are alternately laminated. In a ceramic wiring board in which ceramic dielectric layers and metal wiring layers are alternately laminated,
The entire metal wiring layer is configured as a sintered layer,
It has a plurality of metal layers stacked in the thickness direction, and adjacent ones of the plurality of metal layers are made of metals of different materials.

Further, the above-mentioned ceramic wiring board having the first structure can be manufactured by the following manufacturing method of the present invention. That is, the method is a method for manufacturing a ceramic wiring board in which ceramic dielectric layers and metal wiring layers are alternately laminated, and a ceramic green sheet to be a ceramic dielectric layer and a wiring layer metal to be a wiring layer. A ceramic wiring board is obtained by making a laminated body by alternately laminating powder patterns and firing the laminated body.
The wiring layer metal powder pattern is characterized in that a plurality of pattern layers each formed of metal powder are formed by printing on a ceramic green sheet so that adjacent layers are made of different materials.

According to the present invention, the entire metal wiring layer is formed as a sintered layer, and a plurality of metal layers made of different materials are laminated in the thickness direction so as to smooth and reduce the resistance. It is possible to easily realize a wiring section having a functionalized surface layer section. Specifically, because the metal wiring layer is formed by sintering the metal powder patterns that have been overlaid, there is concern about the occurrence of defects such as uneven plating, plating sag, or non-plated areas, as when electroless plating is adopted. You don't have to. Even when the ceramic dielectric is made of glass ceramic, no plating solution or plating pretreatment solution is used, and therefore there is no concern that transmission characteristics will deteriorate due to erosion of glass components.

Further, in the prior art which employs the electroless plating method, as described above, the wiring portion having the multi-layer structure can be realized only on the outermost surface of the substrate. By forming the wiring layer metal powder pattern between the ceramic green sheets in a sandwiched form and performing the sintering, the wiring portion embedded in the substrate can have a multi-layer structure. As a result, it is possible to realize a ceramic wiring board having the following wiring portions, which has been impossible in the past. That is, the second ceramic wiring board of the present invention is a ceramic wiring board in which a ceramic dielectric layer and a metal wiring layer are alternately laminated. It is characterized in that it has a plurality of laminated metal layers, and that adjacent ones of the plurality of metal layers are made of metals of different materials.

By forming the metal wiring layer inside the substrate as such a multi-layer structure and functionalizing the surface layer portion thereof,
For example, it is possible to provide a high-performance ceramic wiring board with less transmission loss with a high yield.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an appearance of a high-frequency multilayer ceramic wiring board (hereinafter, also simply referred to as a board) 1 which is an embodiment of the ceramic wiring board of the present invention. A terminal portion 40 for forming an electrical connection with the circuit pattern is formed. FIG. 2 schematically shows the internal structure of the substrate 1. The ceramic dielectric layer 50 and the metal wiring layer 8 are shown in FIG.
0 and 30 are alternately laminated, and the semiconductor element 51 is mounted on the surface thereof as required. The metal wiring layer 80 is formed so as to be exposed on the surface of the substrate 1.
0 is embedded in the substrate 1. Then, each metal wiring layer 8
0 and 30 are electrically connected to each other by an interlayer via 35 that penetrates the ceramic dielectric layer 50 in the thickness direction. The substrate 1 may be one having an active element function having a high-frequency signal processing capability itself, such as a signal processing package, or a separately configured semiconductor discrete component or other high-frequency components. It may be any high-frequency electronic component (for example, a substrate used for an antenna switch module) on which an element is mounted.

In the substrate 1 of this embodiment, the metal wiring layer 8
0 and 30 are configured as being accompanied by a ground conductor 56 that functions as a shield portion for noise protection. The ground conductor 56 is formed in the same manner as the metal wiring layers 80 and 30 so as to cover one surface of the ceramic dielectric layer 50 over substantially the entire surface. In FIG. 2, the metal wiring layer 30
Are sandwiched between the ceramic dielectric layers 50 to form a so-called strip line. The metal wiring layer 80 exposed on the surface of the ceramic dielectric layer 50 forming the surface layer of the substrate 1 forms a so-called microstrip line by forming the ground conductor 56 on the back surface of the ceramic dielectric layer 50. Can be seen as composing. However, the application of the present invention is not limited to the form of these metal wiring layers, but can be applied to all forms of known high-frequency metal wiring such as slot lines and coplanar waveguides.

Further, in the substrate 1 of this embodiment, in addition to the metal wiring layers 80 and 30, the capacitor 54 and the inductor 5 are provided.
Although various thick film circuit elements such as No. 3 and resistor 55 are built in, it is also possible to form a substrate having only a metal wiring layer without particularly having a thick film circuit element. In the present invention, the high frequency signal means a signal having a frequency of 500 MHz or higher.

As the dielectric material forming the ceramic dielectric layer 50, alumina ceramics, mullite ceramics, aluminum nitride ceramics, silicon nitride ceramics, silicon carbide ceramics and glass ceramics having an alumina content of 98% or more are used. A material having a small dielectric loss even in a high frequency range is preferably used in the present invention. In particular, it is particularly preferable to use a composite material of glass and a ceramic filler other than glass (hereinafter, referred to as glass ceramic) or high-purity alumina ceramics in that the surface of the dielectric substrate is excellent in smoothness during baking. desirable. In particular, as the glass ceramic, a system in which 40 to 60 parts by weight of an inorganic ceramic filler such as alumina is added to borosilicate glass or lead borosilicate glass is preferable because the simultaneous sinterability with the metal wiring portion is good.

The material of the metal used for the metal wiring layers 80 and 30 is Ag or A, for example, when glass ceramics is used as the material of the ceramic dielectric layer 50.
A material containing u or Cu as a main component can be used (in this specification, the “main component” means a component having the highest mass content). Specifically, Ag-based (A
g simple substance, Ag-metal oxide (Mn, V, Bi, Al, S
i, oxides such as Cu), Ag-glass addition, Ag-P
d, Ag-Pt, Ag-Rh, etc.), Au-based (Au simple substance,
Au-metal oxide, Au-Pd, Au-Pt, Au-R
h), Cu-based (Cu simple substance, Cu-metal oxide, Cu-
Materials selected from low resistance materials such as Pd, Cu-Pt, Cu-Rh, etc. can be used.

As shown in FIG. 3, in the metal wiring layer 80, the side in contact with the substrate 1 is the first layer 81, the side exposed on the substrate surface is the second layer 82, and the second layer 82 is mainly composed of Au. And a metal (for example, Au alone). The first layer 81 is made of a metal other than Au, for example, a metal containing Cu or Ag as a main component (for example, a simple substance of each metal). On the other hand, the metal wiring layer 30 is formed as a single material layer of a metal containing Cu or Ag as a main component.
* The last underlined part is an explanation of the wiring layer 30 inside the board.

A method of manufacturing the ceramic wiring board 1 will be described below. First, a ceramic green sheet 150 to be the ceramic dielectric layer 50 is prepared.
The ceramic green sheet 150 uses a solvent (acetone, methyl ethyl ketone, diacetone, methyl isobutyl) as a raw material ceramic powder for the ceramic dielectric layer (for example, in the case of glass ceramic powder, a mixed powder of borosilicate glass powder and ceramic filler powder such as alumina). Ketone, benzene, bromochloromethane, ethanol, butanol, propanol, toluene, xylene, etc.), binder (acrylic resin (eg, polyacrylic acid ester, polymethylmethacrylate), cellulose acetate butyrate, polyethylene, polyvinyl alcohol,
Polyvinyl butyral etc.), plasticizers (butylbenzyl phthalate, dibutyl phthalate, dimethyl phthalate, phthalates, polyethylene glycol derivatives, tricresole phosphate etc.), deflocculants (fatty acids (glycerin trioleate etc.), surfactants (benzene sulfone) Acid, etc.), wetting agent (alkyl allyl polyether alcohol, polyethylene glycol ethyl ether, nityl phenyl glycol, polyoxyethylene ester, etc.) and other additives are mixed and kneaded, and formed into a sheet by a doctor blade method or the like. It is a thing.

Then, the metal wiring layer 30 (when a thick film circuit element is to be formed, is formed on the above-mentioned ceramic green sheet,
A wiring layer metal powder pattern to be the element pattern is also formed. The wiring layer metal powder pattern is Cu
Alternatively, it is formed by a known screen printing method using a paste of a metal powder containing Ag as a main component. The metal powder paste is a mixture of metal powder, an organic binder such as ethyl cellulose, and an organic solvent such as butyl carbitol, which are mixed and adjusted to obtain an appropriate viscosity. The wiring layer metal powder pattern, another ceramic green sheet are stacked on the pattern, and the pattern printing / ceramic green sheet lamination process is repeated. Then, as shown in FIG. 6A, the wiring layer metal powder pattern 180 to be the metal wiring layer 80 exposed on the surface of the substrate 1 becomes the first layer 81 on the surface of the last ceramic green sheet 150. The pattern layer 181 to be formed is formed by using a paste of metal powder containing Cu or Ag as a main component, and the pattern layer 182 to be the second layer 82 is formed on the paste of metal powder containing Au as a main component. The final laminated body is obtained by forming the laminated body using. When the interlayer via 35 is formed, the via forming position of the ceramic green sheet 150 is perforated with a drill or the like, and the metal paste is filled therein.

When the above laminated body 180 is fired, FIG.
As shown in (b), the wiring layer metal powder pattern 180 becomes the metal wiring layer 80. According to this, the metal wiring layer 80 exposed on the surface of the substrate 1 is configured such that the second layer 82 forming the exposed surface layer portion is mainly composed of Au, and therefore corrosion deterioration of the wiring layer is unlikely to occur. . Further, since the entire metal wiring layer 80 is formed as a metal sintered body, all the problems of the prior art of forming the Au layer and the like by using electroless plating (which has already been described and will not be repeated) are solved. be able to.

As another embodiment in which the metal wiring layer 80 has the above-mentioned multi-layer structure, the following constitution can be exemplified. For example, the metal wiring layer 80 includes a second layer 82 including the main surface and a first layer 81 adjacent to the second layer 82 on the main surface on at least one side in the thickness direction.
And the second layer 82 can be made of a metal having a lower electrical resistivity than the first layer 81. To give a specific example, the second layer 82 is a metal containing Ag as a main component (such as Ag alone), and the first layer is a metal containing Cu as a main component (C
u alone). With this configuration,
Of the surface layer portion of the metal wiring layer 80 that serves as a transmission path for high-frequency signals, the electrical resistivity becomes relatively low on the main surface side of the second layer 82, and transmission loss can be reduced.

Further, the second layer 82 may be made of a metal having a melting point lower than that of the first layer 81 (solidus temperature in the case of alloy). As described above, in addition to the configuration in which the second layer 82 is Ag alone and the first layer 81 is Cu alone as described above, the second layer 82 is Au alone and the first layer 81 is A configuration in which only Cu or Ag is used is also applicable. By doing so, the shrinkage during firing becomes larger in the second layer 82 than in the first layer 81 due to the lower melting point. As a result, the first layer 81 does not shrink much and becomes a phase having a high porosity, which facilitates matching with the ceramic dielectric layer 50 during firing. On the other hand, the second layer 82 is densely contracted to be a layer having a smooth main surface. A smooth surface, that is, a surface having a small arithmetic average roughness has a low impedance because the transmission path length of the high frequency signal along the surface is short, and the transmission loss can be suppressed low.

As shown in FIG. 4, the metal wiring layer 30 embedded in the substrate 1 may have a multi-layer structure similar to the metal wiring layer 80. In this case, one main surface in the thickness direction is the first main surface 30P and the other main surface is the second main surface 30S, and both main surfaces 30P and 30S are arranged in contact with the ceramic dielectric layer 50. And
It has the 1st layer 31 containing the 1st main surface 30P, and the 2nd layer 32 containing the 2nd main surface, and the 2nd layer 32 is a metal whose electric resistivity and / or melting point are lower than the 1st layer 31. Composed.
Such a metal wiring layer 30 is obtained by forming a wiring layer metal powder pattern similar to the wiring layer metal powder pattern 180 of FIG. 6A in a form sandwiched between ceramic green sheets and firing it. You can As a result, the first main surface 30P has a higher electrical resistivity and / or arithmetic average roughness than the second main surface 30S, but the high frequency signal has a second main surface with a low electrical resistivity and / or roughness. The surface 30S is transmitted in a selected form, and the impedance of the entire metal wiring layer is reduced. Note that FIG.
As shown in FIG. 5, the second layer 32 forming the main surface on one side of the metal wiring layer 30 and the third layer 33 forming the other main surface are higher in electrical resistivity and // than the first layer 31 forming the inner layer portion. Alternatively, it can be made of a metal having a low melting point, and by doing so, the electrical resistivity and / or the arithmetic average roughness can be reduced on both the first main surface 30P and the second main surface 30S. It is possible to enjoy the effect of reducing transmission loss.

The metal wiring layer 80 exposed on the surface of the substrate
In the case of, on the exposed main surface, JIS:
An arithmetic average roughness of 0.3 μm or less measured directly by the method specified in B0601 (1994) is desirable in order to sufficiently reduce the impedance of the metal wiring layer 80. On the other hand, in the case of the metal wiring layer 30 embedded in the substrate 1, when the metal wiring layer 30 and the ceramic dielectric layer 50 are cut and polished in the thickness direction and observed, the profile of the boundary between the two is rough. The impedance of the metal wiring layer 30 is sufficient when the arithmetic mean roughness Ra calculated by applying the definition defined in JIS: B0601 (1994) to the profile is 0.3 μm or less. It is desirable to reduce

FIG. 7 shows a ceramic package substrate 100 which is another embodiment of the substrate of the present invention (the upper diagram is a plan view and the lower diagram is a front sectional view). The substrate 1
Reference numeral 00 denotes a chip holding portion 201a formed of the same material on a heat dissipation metal substrate 201 such as a Cu-W alloy so as to project, and a multi-layer wiring portion 60 is arranged so as to surround the periphery thereof. The multilayer wiring part 60 is formed by alternately stacking sheet-shaped ground conductors 56 and ceramic dielectric layers 50, and a metal wiring layer 80 is exposed and formed on the outermost surface part. Further, on the outermost surface portion of the multilayer wiring portion 60, on the both sides in the width direction of the metal wiring layer 80, another ground conductor 15 is provided at regular intervals.
6 and 156 are exposed and formed, so that a so-called coplanar waveguide type wiring portion is formed. The ground conductors 56 and 156 of each layer are connected by the via 35. In addition, the multilayer wiring part 60 is provided around the chip holding part 201a.
High-frequency IC or LSI protruding from the surface of
A frame body 206 for forming a concave portion for accommodating the chip 205 is formed. The frame 206 includes a ceramic dielectric layer 50 and a low-expansion metal layer (made of low-expansion metal such as Invar or Kovar) 20 forming the opening side.
3 and 3 form a structure in which the brazing material layer 202 stores them. Then, the metal wiring layer 80 formed on the outermost surface portion is configured to have the above-described multi-layer structure, similarly to the metal wiring layer 80 of FIG. The chip 1 is adhesively fixed on the tip surface of the chip holding portion 201, and is terminal-connected to the metal wiring layer 80 by a bonding wire 207. Then, the frame body 206
The opening is closed by a metallic lid 204.

[0025]

EXAMPLES In order to confirm the effects of the present invention, the following experiments were conducted. First, a ceramic green sheet was produced as follows. That is, average particle diameter 2.5 μ
m, the composition is CaO + BaO: 6% by mass, SiO ₂ : 6% by mass, Al ₂ O ₃ : 9% by mass, and B ₂ O ₃ 26% by mass with respect to 50 parts by mass of borosilicate glass powder, average as ceramic filler particles. 50 alumina powder with a particle size of 2 μm
Part by mass was mixed to prepare a composite ceramic powder. To 100 parts by mass of this composite ceramic powder, 10 parts by mass of an acrylic resin as a binder component, 5 parts by mass of dibutyl phthalate as a plasticizer, and an appropriate amount of methyl ethyl ketone as an organic solvent were added and mixed to form a slurry, A green sheet (thickness 0.3 mm) was obtained by the doctor blade method.

Next, a metal paste was prepared as follows. Paste X: 5 parts by weight of the above-mentioned composite ceramic powder was added to 100 parts by weight of Cu powder having an average particle diameter of 3 μm, and ethyl cellulose as an organic binder and butyl carbitol as a solvent had a viscosity of 1000 poise. It was prepared by adding an appropriate amount to and mixing with a three-roll mill. Paste Y: Prepared in the same manner as paste X except that Au powder having an average particle size of 1 μm was used. -Paste Z: Prepared in the same manner as Paste X except that a mixed powder of 80% by mass of Ag powder having an average particle size of 5 µm and 20% by mass of Pt powder having an average particle size of 2 µm was used.

Then, a linear wiring layer metal powder pattern having a length of 1 cm and a width of 10 μm was formed on the first ceramic green sheet manufactured by the above-mentioned method using the above paste. A: The first pattern layer is 15 μm thick using paste X
And a paste Y was used to form a second pattern layer with a thickness of 3 μm. B: The first pattern layer is 15 μm thick using paste Z
And a paste Y was used to form a second pattern layer with a thickness of 3 μm. C: A single pattern layer with a thickness of 1 using only paste X
It is formed to a thickness of 5 μm, and after baking, alkali degreasing and sulfuric acid cleaning are performed, and Pd is subjected to known plating activation treatment, followed by electroless Ni plating (thickness 3 μm) and electroless gold plating (thickness 0.5 μm). It carried out sequentially. The firing of each sample is performed at 950 ° C. for 1 hour.

The appearance of the obtained substrate sample was visually observed, probes were connected to both ends of each metal wiring layer, and 50 G was measured by a commercially available network analyzer (HP-8510C manufactured by Yokogawa Hewlett-Packard Co., Ltd.).
The inter-terminal transmission coefficient S ₂₁ of the frequency band of up Hz was measured, the half width 5GHz less on the measurement profiles, the peak defective those resulting height 2dB or more transmission loss peak (×), less than the peak height 2dB The sample having only a slight transmission loss peak was evaluated as good (◯), and the sample having no transmission loss peak was evaluated as excellent (⊚). The above results are shown in Table 1.

[0029]

[Table 1]

According to this, in the sample C employing the electroless plating, the plating sag and the non-plating part were generated in the obtained metal wiring portion, but in the samples A and B according to the present invention, such No visual defects were found. Further, although the transmission loss of the high frequency signal was small in each of the samples A and B, the transmission loss peak which was considered to be caused by the plating defect was observed in the sample C.

[Brief description of drawings]

FIG. 1 is a perspective view schematically showing an example of a ceramic wiring board of the present invention.

FIG. 2 is a diagram schematically showing a cross-sectional structure of the ceramic wiring board shown in FIG.

3 is an enlarged schematic view showing a cross-sectional form of the metal wiring layer of FIG.

FIG. 4 is a schematic cross-sectional view showing an example in which a plurality of metal wiring portions embedded in the substrate are formed in FIG.

5 is a schematic cross-sectional view showing a modified example of FIG.

FIG. 6 is an explanatory view showing an example of a manufacturing process of the ceramic wiring board according to FIG.

FIG. 7 is a diagram schematically showing an example in which the ceramic wiring board of the present invention is configured as a package board.

[Explanation of symbols]

1 Ceramic wiring board 30,80 Metal wiring layer 31, 81 First layer 32,82 Second layer 50 Ceramic Dielectric Layer 180 wiring layer metal powder pattern 181 First pattern layer 182 Second pattern layer

Claims (10)

[Claims] 1. A ceramic wiring substrate in which a ceramic dielectric layer and a metal wiring layer are alternately laminated, wherein the metal wiring layer is entirely formed as a sintered layer, and a plurality of metal layers laminated in the thickness direction. A ceramic wiring board having layers, wherein adjacent ones of the plurality of metal layers are made of different metals. 2. The metal wiring layer is formed on the surface of a substrate, the side in contact with the substrate is the first layer, the side exposed on the substrate surface is the second layer, and the second layer is mainly Au. The ceramic wiring board according to claim 1, wherein the ceramic wiring board is composed of a metal as a component. 3. A ceramic wiring substrate in which a ceramic dielectric layer and a metal wiring layer are alternately laminated, and among the metal wiring layers, those formed inside the substrate are a plurality of metal layers laminated in a thickness direction. And a plurality of metal layers adjacent to each other are made of different metal materials. 4. A second layer forming a wiring layer surface layer portion at least in a region including a main surface on one side of a surface of the metal wiring layer is closer to an inner layer side than the first layer adjacent to the second layer. The metal is also composed of a metal having a low electric resistivity.
4. The ceramic wiring board according to any one of items 1 to 3. 5. A second layer forming a surface layer portion of a wiring layer in at least a region including a main surface on one side of a surface of the metal wiring layer is formed from a first layer adjacent to an inner layer side of the second layer. 5. A metallic material having a low melting point is also used.
The ceramic wiring board according to any one of 1. 6. A method of manufacturing a ceramic wiring board, wherein ceramic dielectric layers and metal wiring layers are alternately laminated, comprising: a ceramic green sheet to be the ceramic dielectric layer; and a wiring layer to be the wiring layer. A laminated body in which metal powder patterns are alternately laminated is formed, and the ceramic wiring board is obtained by firing the laminated body, and the wiring layer metal powder pattern is formed so that adjacent layers are made of different materials. A method of manufacturing a ceramic wiring board, comprising: forming a plurality of pattern layers each formed of metal powder on the ceramic green sheet by printing. 7. The method of manufacturing a ceramic wiring board according to claim 6, wherein the second metal powder is made of a metal having a lower electrical resistivity than the first metal powder. 8. The method for manufacturing a ceramic wiring board according to claim 6, wherein the second metal powder is made of a metal having a melting point lower than that of the first metal powder. 9. The pattern layer which is formed in a state where the wiring layer metal powder pattern is exposed on the surface of the laminated body and which is the outermost layer portion of the wiring layer metal powder pattern, has Au as a main component. The method of manufacturing a ceramic wiring board according to claim 6, wherein the ceramic wiring board is made of metal powder. 10. The method of manufacturing a ceramic wiring board according to claim 6, wherein the wiring layer metal powder pattern is formed in a form sandwiched between the ceramic green sheets.