JP2003037157A - Substrate retainer, aligner, method for manufacturing device and method for maintaining semiconductor manufacturing plant and equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent performance degradation of an electrostatic capacitance sensor due to the unavailability of provision of a direct grounding from a measurement target wafer by providing grounding from a wafer chuck and improving the accuracy in height measurement of the wafer with the electrostatic capacitance sensor in a measuring system in which the height of the wafer is measured with the electrostatic capacitance sensor. SOLUTION: A conductor 4 is provided on the face onto which a wafer 3 of a wafer chuck 1 is attached by means of deposition or the like, and the conductor 4 is provided with grounding 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding device for holding a substrate such as a wafer, an exposure device for exposing a pattern of an original plate such as a mask onto a substrate for semiconductor production, and a device production using the exposure device. The present invention relates to a method, a semiconductor manufacturing factory, and a semiconductor manufacturing apparatus maintenance method.

[0002]

2. Description of the Related Art As a conventional technique, a wafer chuck and an exposure apparatus are shown in Japanese Patent Application Laid-Open No. 10-223520. A schematic view of such a wafer chuck is shown in FIG. In FIG. 5, 101 is a wafer chuck body, and 107 is a wafer. Wafer chuck body 101
Is mounted on a wafer stage (not shown) in the exposure apparatus.

The wafer chuck body 101 is a wafer 107.
It has a wafer holding surface 101a for adsorbing. Further, an internal pipe 101d which is a temperature control fluid flow path for flowing a temperature control fluid for controlling the temperature of the wafer 107 is formed. Water is generally used as the temperature control fluid flowing through the internal pipe 101d. The temperature of this water is controlled by a temperature control unit (not shown).

A suction groove 101b is formed on the wafer holding surface 101a of the wafer chuck body 101, and the suction groove 1 is formed by a vacuum pump or the like connected to the through hole 101c.
By exhausting 01b, a vacuum suction force for attracting the wafer 107 to the wafer holding surface 101a of the wafer chuck 101 is generated. Generally, the material of the wafer chuck is ceramics, so the electrical characteristic is dielectric.

[0005]

In recent years, circuit patterns have been miniaturized in order to improve the degree of integration and operating speed of solid-state elements in LSIs and the like, and the gap setting accuracy or reduction in the same-magnification X-ray exposure method has been advanced. It is necessary to improve the accuracy of autofocus (AF) in the projection exposure method. However, according to the above-mentioned conventional technique, when the height of the wafer held on the wafer chuck is measured by the capacitance sensor, it is difficult to directly ground the wafer, which is the measurement target, to the ground. There was a problem that the performance of was not obtained sufficiently. If the performance of the capacitance sensor is not sufficiently obtained, the AF accuracy or the gap setting accuracy is lowered, and as a result, the exposure transfer accuracy, for example, the image performance or the overlay accuracy is decreased. Further, if the gap setting accuracy is lowered in the equal-magnification X-ray exposure method, when the step and repeat operation is performed with the wafer and the mask facing each other, there is a possibility that the mask and the wafer may come into contact with each other or the mask may be damaged.

A first object of the present invention is to improve the measurement accuracy of a capacitance sensor for measuring the height of a wafer for improving the AF accuracy or the gap setting accuracy. A second object of the present invention is to prevent the generation of particles and contaminants caused by the contact between the conductor of the wafer chuck and the wafer. Third of the present invention
The purpose of is to facilitate the mounting of earth ground.
A fourth object of the present invention is to improve the measurement accuracy of the electrostatic capacity sensor that measures the height of the wafer in order to improve the AF accuracy or the gap setting accuracy. A fifth object of the present invention is to easily form a conductor on a wafer chuck. A sixth object of the present invention is to provide an exposure apparatus which improves exposure transfer accuracy by improving AF accuracy or gap setting accuracy.

[0007]

In order to achieve the above first object, the substrate holding device (wafer chuck) of the present invention comprises:
It is characterized in that it has a conductor on an adsorption surface for adsorbing a substrate such as a semiconductor wafer so that the height of the substrate adsorbed by the capacitance sensor can be accurately measured. Further, in order to achieve the second object, the surface for attracting the substrate is constituted by the tips of a plurality of pins for supporting the substrate and the lower surface on which these pins are erected, and the conductor upper surface is It is preferable to provide the conductor on the lower surface with a thickness that is lower than the height of the pin. In order to achieve the third object of the present invention, for example, the conductor of the suction surface is extended to the side surface of the suction surface, and the conductor is provided to the side surface. Further, in order to achieve the fourth object of the present invention, for example, electrical grounding is performed from a conductor arranged on the wafer chuck.

As described above, according to the structure of the present invention, when the height of the wafer is measured by the capacitance sensor, the gap setting accuracy or the AF accuracy of the exposure apparatus can be improved, so that the exposure transfer is performed. The accuracy can be improved.

To achieve the fifth object of the present invention,
Form a conductor on the adsorption surface by vapor deposition or plating,
It can be formed by laminating a conductor plate or foil on the adsorption surface. With such a configuration, the conductor can be provided on the wafer chuck by a method that is easy to work and inexpensive.

In order to achieve the sixth object of the present invention, an exposure apparatus of the present invention comprises a substrate holding device of the present invention, means for exposing the substrate held by the substrate holding device, and the height of the substrate. It is characterized by having a capacitance sensor for performing.

As described above, according to the exposure apparatus of the present invention, A
It is possible to provide an exposure apparatus in which exposure transfer accuracy is improved by improving F accuracy or gap setting accuracy, the yield of semiconductor manufacturing is improved, and there is no apparatus failure due to adhesion of foreign matter to a wafer.

Further, the exposure apparatus of the present invention further has a display, a network interface, and a computer for executing network software, and enables maintenance apparatus information to be communicated via a computer network. May be. The network software is preferably connected to an external network of a factory in which the exposure apparatus is installed, and provides a user interface on the display for accessing a maintenance database provided by the exposure apparatus vendor or the user. It is possible to get information from the database through.

The semiconductor device manufacturing method of the present invention comprises the steps of installing a manufacturing apparatus group for various processes including the above-described exposure apparatus of the present invention in a semiconductor manufacturing factory, and a semiconductor device by a plurality of processes using this manufacturing apparatus group. And a step of manufacturing. At that time, information relating to at least one of the manufacturing apparatus groups may be data-communicated between the step of connecting the manufacturing apparatus groups by the local area network and the local area network and an external network outside the semiconductor manufacturing factory. In addition, a database provided by the exposure apparatus vendor or user is accessed through an external network to obtain exposure apparatus maintenance information by data communication, or an external network is established between the semiconductor manufacturing factory and a different semiconductor manufacturing factory. You may carry out data communication via and may perform production control.

The semiconductor manufacturing plant of the present invention includes a group of manufacturing apparatuses for various processes including the exposure apparatus of the present invention, a local area network connecting the group of manufacturing apparatuses, and an external network outside the factory from the local area network. It has an accessible gateway and enables data communication of information regarding at least one of the manufacturing apparatus group.

The exposure apparatus maintenance method of the present invention is the exposure apparatus maintenance method of the present invention installed in a semiconductor manufacturing factory, wherein the exposure apparatus vendor or user is connected to an external network of the semiconductor manufacturing factory. The process of providing a maintenance database, the process of permitting access to the maintenance database from within the semiconductor manufacturing factory via an external network, and the transmission of the maintenance information accumulated in the maintenance database to the semiconductor manufacturing factory side via the external network. And a process.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 shows an embodiment relating to a wafer chuck of the present invention. In FIG. 1, 1 is a wafer chuck for attracting a wafer, and 2 is a wafer chuck.
Is a pin and 3 is a wafer. The pins 2 reduce the contact area between the wafer 3 and the wafer chuck 1 while the wafer 3 is being chucked, so that even if foreign matter is mixed in the wafer 3,
This is to prevent or reduce the deterioration of flatness. The wafer chuck 1 and the pin 2 have an integrated structure. 4 is a chromium vapor deposition unit, 5 is a chuck base that holds a wafer chuck, and 6
Is a lead wire for grounding the chromium vapor deposition portion 4. The chromium vapor deposition unit 4 is the wafer 3 of the wafer chuck 1.
Is vapor-deposited on the surface to which is absorbed with a thickness lower than the height of the pin 2. With such a configuration, the wafer 3 and the chromium vapor deposition portion 4 do not come into contact with each other, so that the generation of particles and contamination due to chromium can be prevented.

In addition, the wafer chuck 1 has a vacuum hole for adsorbing the wafer 3 and an internal pipe for flowing a temperature control fluid for controlling the temperature of the wafer 3, but they are not shown in FIG.

FIG. 2 shows an embodiment relating to the exposure apparatus of the present invention, which shows a structure in which the height of the wafer is measured by a capacitance sensor. FIG. 2 schematically shows a 1 × X-ray exposure type exposure apparatus. In FIG. 2, the same symbols as those in FIG. 1 denote the same components. Further, 7 is a wafer stage used for driving between shots, and 8 is a stage surface plate to which the guide of the wafer stage 7 is fixed. Furthermore, 9
Is a mask, 10 is a mask membrane on which a circuit pattern is drawn, 11 is a mask chuck for holding the mask, 1
2 is a mask stage, 13 is a mask stage base, 1
4 is an alignment scope. The mask 9 and the mask chuck 11 are mounted on the mask stage 12, and the mask stage 12 is mounted on the mask stage base 13. Further, reference numeral 15 is a wafer height sensor probe for measuring the height of the wafer 3 for gap measurement, which uses a capacitance sensor, and 16 is an amplifier of the wafer height sensor probe 15.

Next, the gap setting will be described with reference to FIG. First, the height of the mask 9 is set by measuring the height of the mask 9 with a mask height sensor (not shown).
At 2, set the height position based on the device. Next, the height of the wafer 3 is set by moving the wafer 3 under the wafer height sensor probe 15 on the wafer stage 7 in advance before the mask 9 and the wafer 3 face each other, and measuring the height of the wafer 3.
The gap between the mask 9 and the wafer 3 is set based on the height measurement.

The mask 9 is used for the gap setting in this embodiment.
The height position of the wafer 3 is set on the basis of the apparatus, and the gap is set based on the height measurement of the wafer 3. However, the present invention is not limited to this. For example, a method of setting the height position of the mask 9 based on the height position information of the mask 9 and the height measurement of the wafer 3 at the time of setting the gap without setting the height position of the mask is also effective.
Also, using the alignment scope 14, the mask 9
Setting the height position of is also effective.

In the present embodiment, the chromium vapor deposition section 4 is grounded via the lead wire 6, and the amplifier 16 is also grounded via the lead wire 6, so that it is grounded in common. There is. Wafer 3 with capacitance sensor
It is preferable that the potential difference between the grounds is zero in order to measure the height of the ground with high accuracy. In addition, a configuration in which two lead wires 6 are connected to each other is also effective. For example, connect the lead wire 6 from the chromium vapor deposition unit 4 to the GND of the amplifier 16.
It is also effective when connected to the (ground) terminal. A circuit for measuring the height of the wafer 7 with such a configuration is schematically shown in FIG.
Can be shown as.

The capacitance sensor is a sensor that measures the displacement and height of the target by using the capacitance from the probe of the sensor to the target. When this is applied to the height measurement of the wafer 3, it is difficult to directly ground the ground from the wafer 3 due to the structure of the exposure apparatus, and therefore it is necessary to ground from the vicinity thereof. At this time, the wafer chuck 1
When the chromium vapor deposition section 4 is provided on the lower surface of the surface for adsorbing the wafer 3 and the earth is grounded from the chromium vapor deposition section 4,
As shown in FIG. 3, the capacitance C1 from the wafer height sensor probe 15 to the wafer 3 and the capacitance C2 formed between the wafer 7 and the chromium vapor deposition unit 4, that is, the wafer chuck 1 are formed in a series circuit. Become.
When the capacitance sensor measures such a circuit, the height of the wafer 3 is measured from the total capacitance C. The total capacitance C is 1 / C = 1 / C1 +
It is calculated by 1 / C2, and if C2 is a sufficiently large value with respect to C1, C2 can be ignored, so that C≈C1. Then, the height of the target wafer 3 can be measured with high accuracy without deteriorating the performance of the capacitance sensor.

In order to set C≈C1, it is necessary to set C2 >> C1. The distance from the surface of the chromium vapor deposition part 4 to the tip of the pin 2 is d, the dielectric constant between them is ε, and the chromium vapor deposition part 4 is
Is S, the capacitance of the wafer chuck 1 is calculated by C2 = εS / d. In order to increase C2, the area of the chromium vapor deposition part 4 should be the same as that of the wafer 3. Therefore, it is preferable that the chromium vapor deposition portion 4 is vapor-deposited on the entire surface of the wafer chuck 1 on which the wafer 3 is adsorbed, excluding the portion of the pins 2, but it is effective if the vapor deposition is performed over a predetermined area. .

Strictly speaking, in FIG. 3, a resistor and a capacitor are formed in parallel on the wafer 3, but this can also be ignored like C2, so the total capacitance C is C≈.
It becomes C1. From the above, the height of the target wafer 3 can be measured with high accuracy without deteriorating the performance of the capacitance sensor.

In this embodiment, the wafer chuck 1
The conductor on the surface where the wafer 3 of FIG.
It is not limited to this. In addition to chromium, it is preferable to use a material having a volume resistivity of 10 × 10 ⁻⁶ Ωcm or less such as gold in addition to chrome, but a material having a volume resistivity of about 1.0 Ωcm can also provide an effect. Further, although the conductor is vapor-deposited, the present invention is not limited to this, and a method of plating is also effective.

Further, as the chromium vapor deposition process, there is a method of vapor depositing chromium by masking the portion of the pin 2 with respect to the surface of the wafer chuck 1 on which the wafer 3 is adsorbed. Other,
A method of depositing chromium on the surface of the wafer chuck 1 that attracts the wafer 3 and then removing the chromium vapor deposition portion of the pin 2 may be used.

Further, as the earth grounding method, in the present embodiment, the chromium vapor deposition section 4 is grounded via the lead wire 6, but the method is not limited to this. For example, it is also effective to extend the chromium vapor deposition part 4 to the side surface of the wafer chuck 1 and ground the ground from the side surface of the wafer chuck 1 by the lead wire 6.

Although the present embodiment has described the equal-magnification X-ray exposure method for the exposure apparatus, the present invention is not limited to this. The present invention is also effective for an exposure apparatus such as a reduction projection exposure system as long as it is configured to electrically ground the ground from a conductor portion arranged on a wafer chuck.

As described above, according to the present embodiment, since the height of the pin can be reduced, the suction pressure and the vacuum pressure when chucking the wafer on the wafer chuck can be obtained.
The wafer transfer time can be shortened.

[Second Embodiment] In the first embodiment, chromium is vapor-deposited on the surface of the wafer chuck 1 on which the wafer 3 is adsorbed, but in the present embodiment, an aluminum plate is used instead of the chromium vapor deposition. Is. FIG. 4 is a diagram for explaining the wafer chuck of this embodiment.

In FIG. 4, 1 is a wafer chuck for adsorbing a wafer, 2 is a pin, and these are an integral structure. 6 is a lead wire for grounding, and 17 is an aluminum plate. The aluminum plate 17 has as many holes as the pins 2 or more. The size and position of the hole must be such that the pin 2 can pass through the hole of the aluminum plate 17 when the aluminum plate 17 is placed on the wafer chuck 1. Further, the wafer chuck 1
When the aluminum plate 17 is overlaid on 7, the aluminum plate 17 is pin 2
Must be lower than the tip of. With such a configuration, the wafer 3 and the aluminum plate 17 do not come into contact with each other, so that generation of particles and contamination due to aluminum can be prevented. Bonding between the wafer chuck 1 and the aluminum plate 17 is optional, and bonding is preferable.

In addition, the wafer chuck 1 has a vacuum hole for adsorbing the wafer 3 and an internal pipe for flowing a temperature control fluid for controlling the temperature of the wafer, which are not shown in FIG.

Although the aluminum plate 17 is used as the conductor on the surface of the wafer chuck 1 for attracting the wafer 3, the conductor is not limited to this. The material is not limited to aluminum, but a material having a volume resistivity of 10 × 10 ⁻⁶ Ωcm or less such as chromium or gold is preferable, but an effect can be obtained even if the volume resistivity is about 1.0 Ωcm. Moreover, since the thickness of the metal foil must be thinner than the height of the pin 2, a metal foil is sufficiently effective.

As described above, according to the present embodiment, the manufacturing process of the wafer chuck is the same as the conventional method, and only the aluminum plate is separately manufactured and the aluminum chuck is mounted, so that the production efficiency is high.

[Embodiment of Semiconductor Manufacturing System] Next,
Semiconductor devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads, micromachines, etc.)
An example of the production system will be described. This is for maintenance services such as troubleshooting and regular maintenance of manufacturing equipment installed in semiconductor manufacturing plants, or software provision.
This is done using a computer network outside the manufacturing plant.

FIG. 6 shows the entire system cut out from a certain angle. In the figure, 301 is a vendor that provides semiconductor device manufacturing equipment (equipment supplier)
It is a business office of. As an example of the manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing factory, for example, pre-process equipment (exposure apparatus, resist processing apparatus, lithography apparatus such as etching apparatus, heat treatment apparatus, film forming apparatus, planarization apparatus) Equipment) and post-process equipment (assembling equipment, inspection equipment, etc.). In the business office 301, a host management system 3 that provides a maintenance database for manufacturing equipment
08, a plurality of operation terminal computers 310, and a local area network (LAN) 309 that connects these to construct an intranet. Host management system 3
08 is provided with a gateway for connecting the LAN 309 to the Internet 305, which is an external network of the office, and a security function for restricting access from the outside.

On the other hand, 302 to 304 are manufacturing plants of semiconductor manufacturing manufacturers who are users of manufacturing equipment. The manufacturing factories 302 to 304 may be factories belonging to different manufacturers or may be factories belonging to the same manufacturer (for example, a factory for pre-process, a factory for post-process, etc.). In each of the factories 302 to 304, a plurality of manufacturing apparatuses 306 and a local area network (LAN) 311 that connects them and constructs an intranet, respectively.
And a host management system 307 as a monitoring device for monitoring the operating status of each manufacturing device 306. Host management system 3 provided in each factory 302-304
07 includes a gateway for connecting the LAN 311 in each factory to the Internet 305, which is an external network of the factory. As a result, the host management system 308 on the vendor 301 side can be accessed from the LAN 311 of each factory via the Internet 305, and only the limited user is permitted to access due to the security function of the host management system 308. Specifically, each manufacturing device 3 is connected via the Internet 305.
In addition to notifying the vendor of the status information indicating the operating status of 06 (for example, a symptom of a manufacturing apparatus in which a trouble has occurred) from the factory side, response information corresponding to the notification (for example,
It is possible to receive maintenance information such as information instructing how to deal with troubles, software and data for dealing with troubles, latest software, and help information from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between each factory 302 to 304 and the vendor 301 and data communication on the LAN 311 in each factory. Instead of using the Internet as an external network outside the factory, it is also possible to use a leased line network (ISDN or the like) which is highly secure without being accessed by a third party. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network so that the user can access the database from a plurality of factories.

Now, FIG. 7 is a conceptual diagram showing the entire system of this embodiment cut out from an angle different from that shown in FIG. In the above example, a plurality of user factories each provided with a manufacturing apparatus and a management system of the vendor of the manufacturing apparatus are connected by an external network, and production management of each factory or at least one unit of the factory is performed via the external network. The information of the manufacturing apparatus was data-communicated. On the other hand, in this example,
A factory equipped with manufacturing apparatuses of a plurality of vendors and a management system of a vendor of each of the plurality of manufacturing apparatuses are connected by an external network outside the factory, and maintenance information of each manufacturing apparatus is data-communicated. In the figure, reference numeral 201 denotes a manufacturing plant of a manufacturing device user (semiconductor device manufacturing maker), and a manufacturing device for performing various processes on a manufacturing line of the factory, here, as an example, an exposure device 202, a resist processing device 203, a film forming processing device. 204 has been introduced. Although only one manufacturing factory 201 is shown in FIG. 7, a plurality of factories are actually networked in the same manner. The respective devices in the factory are connected by a LAN 206 to form an intranet, and the host management system 205 manages the operation of the manufacturing line. Meanwhile, the exposure apparatus manufacturer 210,
Resist processing equipment manufacturer 220, film deposition equipment manufacturer 2
Each of the business establishments of vendors (device supply manufacturers) such as 30 is provided with host management systems 211, 221, and 231 for performing remote maintenance of the supplied equipment, respectively. These are maintenance databases and gateways of external networks as described above. Equipped with. The host management system 205 that manages each device in the user's manufacturing plant and the vendor management systems 211, 221, 231 of each device are
The external network 200 is connected to the Internet or a leased line network. In this system, if a trouble occurs in any of the series of manufacturing equipment on the manufacturing line, the operation of the manufacturing line is suspended, but the vendor of the equipment in trouble receives remote maintenance via the Internet 200. This enables quick response and minimizes production line downtime.

Each manufacturing apparatus installed in the semiconductor manufacturing factory is provided with a display, a network interface, and a computer that executes network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, or a network file server. The network access software includes a dedicated or general-purpose web browser, and provides a user interface having a screen as shown in FIG. 8 on the display. The operator who manages the manufacturing apparatus at each factory refers to the screen, and the manufacturing apparatus model (401), serial number (402), trouble subject (403), date of occurrence (404), urgency (4)
05), symptom (406), coping method (407), progress (4)
08) etc. is input to the input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the appropriate maintenance information as a result is returned from the maintenance database and presented on the display. The user interface provided by the web browser is a hyperlink function (410-412) as shown in the figure.
The operator can access more detailed information on each item, pull out the latest version of software used in the manufacturing equipment from the software library provided by the vendor, and use the operation guide (help information for the factory operator's reference). ) Can be withdrawn.

Next, a semiconductor device manufacturing process using the above-described production system will be described. FIG. 9 shows a flow of the whole manufacturing process of the semiconductor device. In step 11 (circuit design), a semiconductor device circuit is designed. In step 12 (mask production), a mask having the designed circuit pattern is produced. On the other hand, in step 13 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 14 (wafer process) is called a pre-process, and using the mask and wafer prepared above,
The actual circuit is formed on the wafer by lithography. The next step 15 (assembly) is called a post process,
This is a process of forming a semiconductor chip using the wafer manufactured in step 14, and includes an assembly process such as an assembly process (dicing, bonding) and a packaging process (chip encapsulation). In step 16 (inspection), the semiconductor device manufactured in step 15 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, semiconductor devices are completed and shipped (step 1
7) Do. The front-end process and the back-end process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the remote maintenance system described above. Information for production management and device maintenance is also data-communicated between the front-end factory and the back-end factory via the Internet or the leased line network.

FIG. 10 shows a detailed flow of the wafer process. In step 21 (oxidation), the surface of the wafer is oxidized. In step 22 (CVD), an insulating film is formed on the wafer surface. In step 23 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 24 (ion implantation), ions are implanted in the wafer. Step two
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 26 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the above-described exposure apparatus. In step 27 (development), the exposed wafer is developed. In step 28 (etching), parts other than the developed resist image are scraped off. In step 29 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing apparatus used in each step uses the optical encoder described above where precise positioning of the wafer or resist is required, the yield in semiconductor device manufacturing can be improved. In addition, since each manufacturing equipment is maintained by the remote maintenance system described above, troubles can be prevented in advance, and even if a trouble occurs, quick recovery can be performed, and the productivity of semiconductor devices can be improved compared to the past. Can be improved.

[0042]

As described above, according to the present invention,
The surface of the wafer chuck that holds the wafer has a conductor, and the conductor is electrically grounded to improve the measurement accuracy when measuring the height of the wafer with the capacitance sensor. Therefore, the gap setting accuracy or the AF accuracy is improved. Therefore, it is possible to provide an exposure apparatus with improved exposure transfer accuracy.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a wafer chuck according to a first embodiment.

FIG. 2 is a diagram illustrating an apparatus configuration of an exposure apparatus according to the first embodiment.

FIG. 3 is a diagram illustrating a wafer height measurement according to the first embodiment.

FIG. 4 is a diagram illustrating a wafer chuck according to a second embodiment.

FIG. 5 is a diagram illustrating a conventional wafer chuck.

FIG. 6 is a conceptual view of the semiconductor device production system viewed from a certain angle.

FIG. 7 is a conceptual view of the semiconductor device production system viewed from another angle.

FIG. 8 is a specific example of a user interface.

FIG. 9 is a diagram illustrating a flow of a device manufacturing process.

FIG. 10 is a diagram illustrating a wafer process.

[Explanation of symbols]

1: Wafer chuck, 2: Pin, 3: Wafer, 4: Chromium vapor deposition part, 5: Chuck base, 6: Lead wire, 7: Wafer stage, 8: Stage surface plate, 9: Mask, 10:
Mask membrane, 11: mask chuck, 12: mask stage, 13: mask stage base, 14: alignment scope, 15: wafer height sensor probe,
16: amplifier, 17: aluminum plate.

Claims (16)

[Claims] 1. A substrate holding device having a conductor on an adsorption surface for adsorbing a substrate, wherein the height of the adsorbed substrate can be measured by a capacitance sensor. 2. The surface for adsorbing the substrate comprises the tips of a plurality of pins for supporting the substrate and a lower surface on which these pins are erected. Substrate holding device. 3. The substrate holding device according to claim 2, wherein the conductor is provided on the lower surface with a thickness such that an upper surface of the conductor is lower than a height of the pin. 4. The substrate holding device according to claim 1, wherein the conductor is extended to a side surface of the suction surface. 5. The substrate holding device according to claim 1, wherein the conductor is electrically grounded. 6. The substrate holding device according to claim 1, wherein the conductor is formed on the suction surface by vapor deposition. 7. The conductor is formed on the adsorption surface by plating.
The substrate holding device according to claim 1. 8. The substrate holding device according to claim 1, wherein the conductor is formed by laminating a conductor plate or foil on the attraction surface. . 9. A plate holding device according to claim 1, a means for exposing a substrate held by the plate holding device, and a capacitance sensor for measuring the height of the substrate. Exposure equipment. 10. A step of installing a manufacturing apparatus group for various processes including the semiconductor manufacturing apparatus according to claim 9 in a semiconductor manufacturing factory, and a step of manufacturing a semiconductor device by a plurality of processes using the manufacturing apparatus group. A device manufacturing method comprising: 11. A step of connecting the manufacturing apparatus group with a local area network, and data communication of information relating to at least one of the manufacturing apparatus group between the local area network and an external network outside the semiconductor manufacturing factory. The method according to claim 10, further comprising: 12. A database provided by a vendor or a user of the semiconductor manufacturing apparatus is accessed through the external network to obtain maintenance information of the manufacturing apparatus by data communication, or a semiconductor manufacturing different from the semiconductor manufacturing factory. The method according to claim 10, wherein data is communicated with a factory via the external network to perform production management. 13. A manufacturing apparatus group for various processes including the semiconductor manufacturing apparatus according to claim 9, a local area network connecting the manufacturing apparatus group, and an external network outside the factory accessible from the local area network. A semiconductor manufacturing factory having a gateway for enabling data communication of information regarding at least one of the manufacturing apparatus group. 14. The method according to claim 9, which is installed in a semiconductor manufacturing factory.
The method for maintaining a semiconductor manufacturing apparatus according to claim 1, wherein a vendor or a user of the semiconductor manufacturing apparatus provides a maintenance database connected to an external network of a semiconductor manufacturing factory, and the external network is provided from within the semiconductor manufacturing factory. A semiconductor manufacturing apparatus comprising: a step of permitting access to the maintenance database via a network; and a step of transmitting maintenance information accumulated in the maintenance database to a semiconductor manufacturing factory side via the external network. Maintenance method. 15. The semiconductor manufacturing apparatus according to claim 9, further comprising a display, a network interface, and a computer that executes network software, and data communication of maintenance information of the semiconductor manufacturing apparatus via a computer network. Semiconductor manufacturing equipment that has made it possible. 16. The network software comprises:
Provided on the display is a user interface for accessing a maintenance database provided by a vendor or a user of the semiconductor manufacturing apparatus, which is connected to an external network of a factory in which the semiconductor manufacturing apparatus is installed.
16. The device according to claim 15, which makes it possible to obtain information from the database via the external network.