JP2003037086A - Metal polishing composition and method for polishing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide metal polishing composition capable of suppressing etching by rapidly polishing metal and suppressing the occurrence of a damage to a polishing surface, and to provide a method for polishing the metal using the composition. SOLUTION: (1) The metal polishing composition comprises a particle having a functional group for capturing a metal ion, oxidizing agent, a nitrate and water. (2) The metal polishing composition described in (1) further comprises at least one type selected from the group composed of spherical particles, a benzotriazole and a benzotriazole derivative. (3) The method for polishing the metal comprises a step of polishing the metal by using the composition described in (1) by chemiomechanical polishing.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a metal polishing composition for polishing a metal, and a metal polishing method using the polishing composition. More specifically, the present invention relates to a metal polishing composition for polishing a metal film used for manufacturing a semiconductor device, particularly a copper-based metal film, and a polishing method using the polishing composition.

[0002]

2. Description of the Related Art In recent years, various fine processing techniques have been researched and developed for higher integration and higher performance of LSI. Among them, a chemical mechanical polishing method (chemical mechanical polishing, sometimes abbreviated as CMP hereinafter) has been attracting attention. CMP is a technique that combines a chemical action and a mechanical action between a polishing composition and an object to be polished, and particularly flattening of an interlayer insulating film, formation of a metal plug, formation of a buried metal wiring in a multilayer wiring forming process. It has become an indispensable technology in such cases.

From the viewpoint of increasing the speed of LSIs, the formation of embedded wiring using a metal having a low resistance has been actively studied. Along with this, various studies have been made on a metal polishing composition having a low resistance. Has been done.

For example, in order to improve the polishing rate, an etching additive such as a complexing agent (for example, amine or glycine) which reacts with copper ions to form a water-soluble copper complex is added to the metal polishing composition. A method is known in which, when contained, it is polished at a high speed while performing etching. However, when polishing the metal wiring formed on the semiconductor substrate, the metal isotropically etched in the polishing composition containing the etching additive, and especially the center of the metal wiring film embedded in the groove or opening is There is a problem that not only flatness is impaired due to dishing which causes the thickness of the portion to become thin, but also the resistance value to increase.

Further, a method of using abrasive particles containing a soft organic polymer compound as a main component for polishing a copper-based metal having a low hardness has been proposed. However, if an etching additive is not included. There was a problem that a high polishing rate could not be obtained, and when an etching additive was added, dishing occurred as in the above case.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to polish a metal at high speed, to suppress the generation of scratches on the polished surface, and to suppress etching, and to use the polishing composition. A metal polishing method is provided.

[0007]

Means for Solving the Problems As a result of intensive studies to find a metal polishing composition free from the above problems, the present inventors have found that particles having a functional group for capturing metal ions, an oxidizing agent, The inventors have found that the object can be achieved by using a metal polishing composition containing a nitrate and water, and have completed the present invention.

That is, the present invention relates to [1] a metal polishing composition containing particles having a functional group for capturing metal ions, an oxidizing agent, a nitrate and water.

Furthermore, the present invention relates to [2] the metal polishing composition according to the above [1], which further contains at least one selected from the group consisting of spherical particles, benzotriazole and benzotriazole derivatives. is there. Furthermore, the present invention relates to [3] a method for polishing a metal, which comprises polishing the metal polishing composition according to the above [2] by chemical mechanical polishing.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below.
The metal polishing composition of the present invention comprises particles having a functional group for capturing metal ions, an oxidizing agent, a nitrate and water.

The functional group for capturing a metal ion may be any group containing a coordination atom forming a complex with a metal,
Specifically, at least one selected from the group consisting of O atom, N atom, S atom, P atom, As atom, and Se atom.
Included are functional groups containing species.

As specific examples of the functional group, those which coordinate with an O atom include -OH (as a compound, alcohol, phenol, or enol), -COOM (M is a hydrogen ion, an alkali metal ion, an alkali). Represents an earth metal ion or an ammonium ion represented by the following general formula (1): a compound is a carboxylic acid or a salt of a carboxylic acid,> C = O (a compound is an aldehyde, a ketone,
Or quinone), -O- (ether as a compound),-
COOR (R represents a hydrocarbon group, an ester as compound), - CONH ₂ (amide as compounds), - N
O (nitroso compound as a compound), -NO ₂ (nitro compound as a compound), (The compound N- oxide), - SO ₃ M (M is the same as previously defined salt The compound sulfonic acid or sulfonic acid.), - PHO (OM) (M is the same as previously defined As a compound, hypophosphorous acid or a salt of hypophosphorous acid), -PO (OM) ₂ (M is the same as the above definition. As a compound, phosphorous acid or a salt of phosphorous acid),-
AsO (OM) ₂ (M is as defined above. Examples of the compound include arsonic acid or a salt of arsonic acid). ⁺ NR ₁ R ₂ R ₃ R ₄ Formula (1) (In the formula, R ₁ , R ₂ , R ₃ and R ₄ each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a benzyl group. ) As a compound coordinated by an N atom, —NH ₂ (a primary amine as a compound),> NH (a secondary amine as a compound), (Tertiary amine as compound), -N = N- (azo compound as compound, heterocyclic compound),> C = N- (Schiff base as compound, heterocyclic compound), -C
ONH ₂ (amide as compounds),> C = N-OH
(Oxime as a compound),> C = NH (imine and enamine as a compound), and -SCN (thiocyanate as a compound) can be mentioned.

The one coordinated by S atom is --SH
(The compounds are thioalcohol and thiophenol),
-S- (thioether as a compound),> C = S (thioaldehyde, thioketone as a compound), -COS
M (M is the same as the above definition. The compound is thiocarboxylic acid or a salt of thiocarboxylic acid), -CSSM (M
Is as defined above. Examples of the compound include dithiocarboxylic acid or a salt of dithiocarboxylic acid), —CSNH ₂ (thioamide as a compound), and —NCS (isothiocyanate as a compound).

As the one coordinated by P atom,> P-
(Compounds include primary, secondary, tertiary alkyl and aryl phosphines). Examples of those coordinated with an As atom include> As- (the compounds are primary, secondary, tertiary alkyl and arylarsene). S
As a compound coordinated by an e atom, -SeH (selenol as a compound),> C = Se (selenocarbonyl compound as a compound), -CSeSeM (M is the same as the above definition. As a compound, diseleno). Carboxylic acids or salts of diselenocarboxylic acids).

Among the functional groups which capture these metal ions, --OH, --COOM,> C═O, --O--, --SO _{3
M, -PO (OM) 2,} -NH 2,> NH, -SH, -S-, -COSM, -CSSM are preferred (M is as defined above).

These functional groups may be used alone or in combination of two or more. When two or more kinds of functional groups are used in combination, particles having different functional groups or particles containing a compound having different functional groups may be mixed and used, or particles having two or more kinds of functional groups or 2 Particles containing a compound having one or more functional groups may be used. Examples of particles having two or more kinds of functional groups or particles containing a compound having two or more kinds of functional groups include those having aminocarboxylic acid, aminoalcohol, aminophosphonic acid or the like as a functional group.

The functional group for capturing the metal is preferably present on the surface of the particle, but even if the functional group does not exist on the surface of the particle, the metal is crushed by the stress during polishing or the coating film is peeled off to remove the metal. Similar effects can be obtained if the functional groups to be captured are exposed on the surface and can come into contact with the metal to be polished.

Particles having a functional group for capturing metal ions include alumina, titania, zirconia, silica,
It is possible to use particles obtained by introducing the functional group into metal oxide particles such as ceria. A known method can be applied to the introduction of the functional group. For example, in the case of metal oxide particles, as a particle containing a compound having a functional group for capturing metal ions, a silane coupling agent or a titanate coupling agent having a target functional group, and a metal oxide particle are used. Can be obtained by reacting.

As the particles having a functional group for capturing metal ions, polymer particles having the functional group introduced therein can be used. A known method can be applied to the introduction of the functional group. For example, in the case of polymer particles, it can be obtained by a method of polymerizing a monomer having a desired functional group or a method of chemically converting the functional group of the polymerized polymer particle into a desired functional group. Since the polymer particles are softer than the metal oxide particles, the generation of scratches during polishing can be suppressed, which is preferable.

Specific examples of polymer particles having a functional group for capturing metal ions include particles made of an ion exchange resin. Examples of the ion exchange resin particles include cation exchange resin particles, anion exchange resin particles, and chelate resin particles. The cation exchange resin particles, for example, -SO ₃ M (. M is a salt of sulfonic acid or sulfonic acid as the same as above defined compounds) or -
Examples thereof include cation exchange resin particles having COOM (M is the same as the above definition; carboxylic acid or a salt of carboxylic acid as a compound) as a functional group. Examples of the anion exchange resin particles include anion exchange resin particles having an amino group, a mono-substituted amino group, a di-substituted amino group or the like as a functional group. Examples of the chelate resin particles include chelate resin particles having aminocarboxylic acid, aminophosphonic acid, iminodiacetic acid or the like as a functional group.

The chelate resin is a resin having on its surface a polydentate ligand having a plurality of coordination atoms forming a complex with a metal. Generally, when a polydentate ligand having two or more coordinating atoms binds to a metal ion, it forms a chelate ring and has stability higher than that of a complex in which a monodentate ligand is coordinated. Therefore, the ability to capture the metal ions to be polished increases, and the chemical action can be increased.

From the viewpoint of polishing characteristics, the chelate resin particles used in the present invention preferably have aminocarboxylic acid or iminodiacetic acid as a functional group.

As the chelate resin particles having these functional groups, Na type in which the counter ion of the functional group is sodium ion is generally used, but when applied to the semiconductor manufacturing process, sodium ion diffuses into the insulating film. As a counter ion, a hydrogen ion (H type) or an ammonium ion (ammonium type) represented by the following general formula (1) has little influence on semiconductor devices. Is preferred. ⁺ NR ₁ R ₂ R ₃ R ₄ Formula (1) (In the formula, R ₁ , R ₂ , R ₃ and R ₄ each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a benzyl group. .) As R ₁ , R ₂ , R ₃ and R ₄ , a hydrogen atom or an alkyl group having 1 to 5 carbon atoms is preferable. Examples of the saturated alkyl group having 1 to 5 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, s
Examples thereof include an ec-butyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group, and a tert-pentyl group.

The chelate resin particles having aminocarboxylic acid or iminodiacetic acid as a functional group can be produced by a known method. For example, a method of polymerizing a monomer having a desired functional group, a method of chemically converting the functional group of the polymerized polymer particles into a desired functional group, and the like can be mentioned.

A known method can also be applied to the method in which the counter ion of the functional group is at least one selected from the group consisting of H type and ammonium type represented by the above general formula (1). For example, a method of making a target counterion from the raw material stage, a method of making another counterion a target counterion by an ion exchange method, and the like can be mentioned. In the ion exchange method, for example, the chelate resin particles produced with Na as the counter ion are packed in a column, and an aqueous hydrochloric acid solution is passed through to form an H type, and an aqueous amine solution is passed through the column. Can be ammonium type. In the ion exchange method, in addition to a method of using a column for circulation, batch processing by stirring or the like can be performed.

The chelate resin particles have an average particle size of 1.0 μm.
It is preferable that the particle size is m or less. When the average particle size of the particles is 1.0 μm or less, the processing accuracy of the polished surface tends to be further improved. If the average particle size of the particles exceeds 1.0 μm, scratches tend to occur on the polished surface,
The reliability of semiconductor devices tends to decrease. Here, in the present invention, the average particle diameter means an average particle diameter (average secondary particle diameter) measured by a dynamic light scattering method.

The chelate resin particles having an average particle size of 1.0 μm or less can be directly produced by polymerization, but can also be obtained by wet pulverizing polymer particles having an average particle size of more than 1.0 μm. You can A known pulverizer can be used for the wet pulverization. For example, a media system using a media such as a ball mill or a vibration mill, or a medialess system in which dispersion liquids collide with each other under high pressure can be used. It is preferable to use ceramics such as zirconia or a polymer in the liquid contact part in order to avoid metal contamination from a crushing device or the like. If necessary, coarse particles may be classified by operations such as wet gravity sedimentation, centrifugal sedimentation, and filtering, and the particles may be sized to a desired particle size before use.

Further, it is preferable to perform the coarse crushing treatment by the dry crushing before the wet crushing because the crushing efficiency in the wet crushing can be increased. As a method of dry pulverization, for example, a known pulverizer such as a jaw crusher, a gyratory crusher, a roll crusher, an edge runner, a hammer crusher, a ball mill, a jet mill, a disc crusher can be used. It is preferable to use zirconia or a polymer in the contact portion in order to avoid metal contamination from a pulverizer or the like. If necessary, coarse particles may be classified by an apparatus such as a dry air classifier, and the particles may be sized to a desired particle size before use.

The counter ion of the functional group of the chelate resin to be wet-ground is preferably at least one selected from the group consisting of H type and ammonium type represented by the general formula (1), but When the ion is not H type or ammonium type, the counter ion may be H type or ammonium type by ion exchange after wet pulverization. For example, the H type can be obtained by wet pulverizing a Na type chelate resin, adding a protonic acid such as hydrochloric acid or nitric acid to release sodium ions, and removing the sodium ions by membrane filtration or the like. Further, an ammonium type can be obtained by adding an amine to the H type.

The concentration of particles having a functional group for trapping metal ions in the metal polishing composition of the present invention is usually 1 to
It is 30% by weight. When the concentration of the particles having a functional group that captures the metal ions is less than 1% by weight, the effect of improving the polishing rate tends to be difficult to be expressed, and 30% by weight
Even if it exceeds, there is a tendency that the improvement of the polishing rate commensurate with the concentration is not recognized.

The oxidizing agent used in the metal polishing composition of the present invention is preferably an oxidizing agent having an effect of improving the polishing rate. As the oxidizing agent, known oxidizing agents such as hydrogen peroxide, iodic acid and iodate can be used, and among these, hydrogen peroxide is preferably used.

The concentration of the oxidizing agent in the polishing composition is usually
It is preferably 0.1 to 15% by weight with respect to the metal polishing composition. If the concentration of the oxidant is less than 0.1% by weight, the effect of improving the polishing rate tends to be difficult to appear, and even if it exceeds 15% by weight, the improvement of the polishing rate commensurate with the concentration is recognized. Tend not to.

The nitrate used in the metal polishing composition of the present invention acts as an etching inhibitor. Examples of the nitrate include ammonium salt, sodium salt, potassium salt, lithium salt, beryllium salt, magnesium salt, or calcium salt of nitric acid. However, when the substrate to be applied is a silicon substrate for semiconductor integrated circuit or the like, ammonium nitrate is preferably used in order to avoid contamination with alkali metal or alkaline earth metal.

The concentration of nitrate in the metal polishing composition is usually preferably in the range of 0.1 to 20% by weight based on the metal polishing composition. If the concentration of the nitrate is less than 0.1% by weight, the effect of suppressing the etching tends to be difficult to appear, and if it exceeds 20% by weight, the suppression of the etching in proportion to the concentration tends not to be recognized. .

In the preparation of the metal polishing composition of the present invention, the mixing order and the like are not particularly limited. Further, all the components including the oxidant may be mixed, or the oxidant and the other may be separately prepared and mixed at the time of use to obtain the composition of the present invention. Further, the metal polishing composition of the present invention may be used in an actual polishing process by preparing a stock solution having a relatively high concentration, diluting it at the time of use.

The metal polishing composition of the present invention further contains at least one selected from the group consisting of spherical particles, benzotriazole and benzotriazole derivatives for the purpose of improving the flattening property of a metal having surface irregularities during polishing. One kind can be added. The spherical particles may be substantially spherical, and inorganic oxide particles such as colloidal silica and colloidal alumina, and polymer particles such as emulsion synthesized by emulsion polymerization can be used. The concentration of the spherical particles in the metal polishing composition is usually preferably 0.1 to 30% by weight based on the metal polishing composition. The concentration of benzotriazole and benzotriazole derivative in the metal polishing composition is usually preferably 0.01 to 0.2% by weight based on the metal polishing composition.

If necessary, additives such as a surfactant may be added to the metal polishing composition of the present invention for the purpose of stabilizing dispersion, preventing sedimentation, and improving the surface roughness of the polishing surface. Anionic, cationic, nonionic and amphoteric surfactants can be used, and two or more types can be used in combination.

The pH of the metal polishing composition of the present invention is not unique because the pH value effective for polishing varies depending on the type of functional group and the type of target metal, but it is usually about 1 to 8, preferably 2 ~ 6. When the pH of the metal polishing composition is less than 1, problems in handling the metal polishing composition and corrosion of the polishing apparatus may occur. A pH adjusting agent may be added to the metal polishing composition of the present invention. As the pH adjusting agent, a known acid or alkali can be used, but nitric acid, phosphoric acid, sulfuric acid containing no metal ion, It is preferable to use an acid or alkali such as ammonium hydroxide or amine.

The metal polishing composition of the present invention can be used for polishing various metals, preferably copper-based metals. The polishing composition is suitably used for polishing a metal film, particularly a copper-based metal film formed on a semiconductor substrate. Here, examples of the copper-based metal include a pure copper film and a copper alloy film.

By using the metal polishing composition of the present invention, it is possible to polish a metal at a high speed, suppress the generation of scratches on the polished surface, and suppress the etching of the metal.

By using the metal polishing composition of the present invention, it is possible to polish a metal by chemical mechanical polishing. Therefore, the polishing method of the present invention can be applied to a metal film, particularly a metal formed on a semiconductor substrate. It can be preferably applied to a film, especially a copper film.

[0042]

EXAMPLES The present invention will be described below with reference to examples, but it goes without saying that the present invention is not limited to the examples.

Regarding the average particle size of the particles, a cumulative 50% size was measured by a Microtrac UPA particle size distribution meter (manufactured by Nikkiso Co., Ltd.) and this was taken as the average particle size. The polishing rate was measured by treating a wafer with a copper film formed by sputtering under the following conditions. [Polishing conditions] Polishing machine: MECAPOL E-460 (PRESI) Pad: Polyurethane type Rotation speed of rotating platen: 60 rpm Rotation speed of wafer holder: 60 rpm Polishing pressure: 200 g / cm ² Polishing composition flow rate: 100 ml / min Polishing time: 30 seconds The presence or absence of polishing scratches was checked by visually observing the wafer surface after polishing.
It was confirmed by observation with an optical microscope. Further, the etching rate was obtained by immersing a wafer having a copper film formed by sputtering in a polishing composition at 40 ° C. for 10 minutes and converting the difference in copper film thickness before and after immersion from the electric resistance value.

Example 1 Chelating resin having an iminodiacetic acid group as a functional group (trade name: Sumichelate MC-700, manufactured by Sumitomo Chemical Co., Ltd.,
1 L of counter ion: Na type) was packed in the column, washed with ultrapure water, 10 L of a 2N hydrochloric acid aqueous solution was passed, and washed with ultrapure water again to obtain an H type (H ⁺ ) chelate resin.
Further, 10 L of 2N ammonia water was passed through the column, and then washed with ultrapure water and dehydrated again to remove ammonium type ( ⁺ N
A chelating resin of H ₄ ) was obtained. 27.5 kg of an ammonium type ( ⁺ NH ₄ ) chelate resin obtained by the same treatment was dry-ground with an impeller mill (trade name: manufactured by Seishin Enterprise Co., Ltd.). Grinding conditions are rotor speed 6000 rp
m, supply rate 15 kg / hr, crushed product 23.3 kg
Got The average particle size of the ground product was 43 μm. Ultrapure water (6.9 kg) was added to the obtained pulverized product (2.6 kg) and the mixture was stirred to obtain a dispersion, which was wet-pulverized with a Dyno-mill (trade name: manufactured by Shinmaru Enterprise Co., Ltd.). The grinding conditions were such that the peripheral speed was 14 m / sec, the supply rate was 0.5 L / min, and 10 passes. The average particle size of the obtained chelate resin particles is 0.
It was 32 μm. Hydrogen peroxide, ammonium nitrate, and benzotriazole were added to the obtained slurry,
After adjusting the chelate resin concentration to 10% by weight, the hydrogen peroxide concentration to 1.5% by weight, the ammonium nitrate concentration to 2% by weight, and the benzotriazole concentration to 0.01% by weight, nitric acid is used to p.
A polishing composition was obtained as H4. The polishing results are shown in Table 1.

Example 2 Chelating resin having an iminodiacetic acid group as a functional group (trade name: Sumichelate MC-700, manufactured by Sumitomo Chemical Co., Ltd.,
1 L of counter ion: Na type) was packed in the column, washed with ultrapure water, 10 L of a 2N hydrochloric acid aqueous solution was passed, and washed again with ultrapure water to obtain an H type chelate resin. The chelate resin was added to 500 g of a 4% tetramethylammonium hydroxide aqueous solution and stirred to obtain a tetramethylammonium type ( ⁺ N (CH ₄ )) chelate resin. The mixture of the tetramethylammonium chelate resin and an aqueous solution of tetramethylammonium hydroxide was subjected to ball mill treatment using 5 mmφ zirconia balls under the conditions of a rotation speed of 70 rpm and a treatment time of 29 hours. The average particle size of the chelate resin particles in the obtained slurry was 0.37 μm. Hydrogen peroxide, ammonium nitrate and benzotriazole were added to the obtained slurry to give a chelate resin concentration of 10% by weight, a hydrogen peroxide concentration of 1.5% by weight, an ammonium nitrate concentration of 2% by weight and a benzotriazole concentration of 0.01%.
After adjusting to the weight percent, the pH was adjusted to 4 with nitric acid to obtain a polishing composition. The polishing results are shown in Table 1.

COMPARATIVE EXAMPLE 1 Inorganic oxide particles, colloidal silica (trade name: Snowtex, manufactured by Nissan Chemical Industries, Ltd., average particle diameter: 0.1 μm) were used as polishing abrasive particles, and the abrasive particle concentration was 10% by weight and peroxide was used. Hydrogen concentration 1.5% by weight, benzotriazole concentration 0.01
After adjusting to the weight%, the pH was adjusted to 4 with nitric acid to obtain a polishing composition. The polishing results are shown in Table 1.

Comparative Example 2 Polymethylmethacrylate (PMMA) was used as polishing abrasive grains.
Using aqueous emulsion resin particles (average particle size 0.20 μm), the abrasive grain concentration was adjusted to 10% by weight, the hydrogen peroxide concentration was 1.5% by weight, and the benzotriazole concentration was 0.01% by weight. The pH was adjusted to 4 to obtain a polishing composition. The polishing results are shown in Table 1.

[0048]

[Table 1]

In the case of Example 1 and Example 2, which are metal polishing compositions containing chelate resin particles having a functional group for capturing metal ions, an oxidizing agent, and a nitrate, a high polishing rate was achieved, but a comparison was made. Colloidal silica of Example 1 and Comparative Example 2
The polishing rate was low with the polishing composition comprising PMMA aqueous emulsion resin particles.

The etching rate was 1 when the wafer with the copper film formed by sputtering was immersed in a polishing composition at 40 ° C.
It was immersed for 0 minutes, and the difference in copper film thickness before and after the immersion was calculated from the electric resistance value.

Examples 3 and 4 Using the slurry obtained by treating in the same manner as in Example 1 above,
Hydrogen peroxide, ammonium nitrate and benzotriazole were added thereto to adjust the chelate resin concentration to 10% by weight, hydrogen peroxide concentration to 1.5% by weight, ammonium nitrate concentration to 2 to 4% by weight, and benzotriazole concentration to 0.01% by weight. After that, the pH was adjusted to 4 with nitric acid to obtain a polishing composition. Table 2 shows the polishing results and the etching results.

Comparative Example 3 A polishing composition was obtained in the same manner as in Examples 3 and 4 except that ammonium nitrate was not added. Table 2 shows the polishing results and the etching results.

[0053]

[Table 2]

When the metal polishing composition containing the chelate resin particles having a functional group for capturing metal ions contained a nitrate, the etching rate could be suppressed without lowering the polishing rate of the copper-based metal.

[0055]

According to the present invention, metal is polished at high speed,
Generation of scratches on the polished surface can be suppressed and etching can be suppressed, and a particularly excellent processed surface can be obtained.

Claims (15)

[Claims] 1. A metal polishing composition comprising particles having a functional group for capturing metal ions, an oxidizing agent, a nitrate and water. 2. The functional group which captures a metal ion is a functional group containing at least one selected from the group consisting of an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, an arsenic atom and a selenium atom. The metal polishing composition as described above. 3. The functional group for capturing a metal ion is --OH,
-COOM,> C = O, -O-, -COOR, -CON
H _2, -NO, -NO _{2, -SO 3 M, -PHO (OM)} , - PO (OM) 2, -A
_{sO (OM) 2, -NH 2} ,> NH, -N = N-,> C = N-,> C = N-OH,> C = N
H, -SCN, -SH, -S-,> C = S, -COS
_{M, -CSSM, -CSNH 2, -NCS} ,> P -,>
As-, -SeH,> S = Se, -CSeSeM (where M represents a hydrogen ion, an alkali metal ion, an alkaline earth metal ion, or an ammonium ion represented by the following general formula (1), and R represents a carbon atom. The metal polishing composition according to claim 1 or 2, which is at least one selected from the group consisting of (representing hydrogen). ⁺ NR ₁ R ₂ R ₃ R ₄ Formula (1) (In the formula, R ₁ , R ₂ , R ₃ and R ₄ each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a benzyl group. ) 4. The metal polishing composition according to claim 1, wherein the particles having a functional group for capturing metal ions are ion exchange resin particles. 5. The metal polishing composition according to claim 1, wherein the particles having a functional group for capturing metal ions are chelate resin particles. 6. The metal polishing composition according to claim 5, wherein the chelate resin particles have aminocarboxylic acid or iminodiacetic acid as a functional group. 7. The chelate resin particles have aminocarboxylic acid or iminodiacetic acid as a functional group, and the counter ion of the functional group is selected from the group consisting of hydrogen ion and ammonium ion represented by the following general formula. It is at least 1 sort (s), The metal polishing composition of Claim 5 or 6 characterized by the above-mentioned. ⁺ NR ₁ R ₂ R ₃ R ₄ Formula (1) (In the formula, R ₁ , R ₂ , R ₃ and R ₄ each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a benzyl group. ) 8. The metal polishing composition according to claim 5, wherein the chelate resin particles have iminodiacetic acid as a functional group. 9. The metal polishing composition according to claim 7, wherein R ₁ , R ₂ , R ₃ and R ₄ are hydrogen atoms. 10. The average particle diameter of the chelate resin particles is 1.0 μm.
The metal polishing composition according to any one of claims 5 to 9, which has a m or less. 11. The metal polishing composition according to claim 1, wherein the metal is a copper-based metal. 12. The method according to claim 1, wherein the oxidizing agent is hydrogen peroxide.
The metal polishing composition according to 1. 13. The metal polishing composition according to claim 1, wherein the nitrate is ammonium nitrate. 14. The metal polishing composition according to claim 1, further comprising at least one selected from the group consisting of spherical particles, benzotriazole and benzotriazole derivatives. 15. A method for polishing a metal, which comprises polishing the metal polishing composition according to claim 1 by chemical mechanical polishing.