JP2003035700A - Charged particle analysis apparatus and manufacturing method thereof, and charged particle analysis method using the charged particle analysis apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a charged particle analysis apparatus that measures the energy of charged particles that enter a substrate within a plasma treatment apparatus, is accurate and durable, has a withstand voltage of 1 kV or larger between electrodes, and has a strength for withstanding irradiation with plasma for a long time, a manufacturing method that can accurately align each electrode without using any semiconductor processes, and can manufacture the charged particle analysis apparatus easily at low costs, and an analysis method of charged particles using the charged particle analysis apparatus. SOLUTION: After an electrode plate 11, an insulating board 12, an electrode board 21, and an insulating board 22 are overlapped and bonded, a hole section 41 is formed for bonding the electrode board 31 and the insulating board 32. The electrode board is as thick as 1 μm or more, and the insulating board is as thick as 10 μm or more. The electrode board 11 is set to be at the same potential as a silicon wafer 51, the electrode board 21 is set to be at negative potential and the electrode board 31 is set to be at positive potential to the electrode board 11, and a charged particle current is measured by the electrode board 31.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for manufacturing a semiconductor device, an electronic component or the like, that is, a plasma etching apparatus for processing a material by using plasma or a film on a substrate by using plasma. In a plasma CVD apparatus or a plasma PVD apparatus for depositing
The present invention relates to a charged particle analyzer for evaluating the state of plasma, a manufacturing method thereof, and a charged particle analysis method.

[0002]

2. Description of the Related Art In this type of plasma processing apparatus, a method of evaluating material processing performance by plasma has been conventionally developed. As a typical example of the plasma characteristic evaluation method, there is an evaluation method using a probe such as a Langmuir probe. By this method, plasma characteristics such as electron density and electron temperature can be evaluated.

However, the material processing performance of the plasma processing apparatus depends on the mass, density and energy of the charged particles that enter the material to be processed through the sheath region from the plasma, and therefore the characteristics inside the plasma away from the material to be processed. It is impossible to evaluate the material processing performance of plasma only by evaluating In order to evaluate the material processing performance in the plasma processing apparatus, it is necessary to evaluate the characteristics of the charged particles described above.

Japanese Unexamined Patent Publication No. 2000-12530 discloses a simple method of arranging an independent measuring electrode in the plasma processing apparatus which keeps almost the same state as the material substrate, and measuring the self-bias potential of this electrode. Has been done.

However, the self-bias potential is only one of the parameters that indirectly contributes to the energy of the charged particles incident on the material to be processed from the plasma through the sheath region, and even if the self-bias potential is the same. If the plasma density is different, the energy of incident charged particles is different.
Therefore, in order to evaluate the material processing performance of plasma by measuring the self-bias potential, it is necessary to acquire a large amount of correlation data between the self-bias potential and the material processing performance at each plasma density, for example. Further, even if the measurement electrode is in almost the same state as the work material substrate, the contact area with plasma and the characteristics as a high frequency circuit are different from the work material substrate. Therefore, the method of evaluating the material processing characteristics of the plasma by measuring the self-bias voltage, compared to the method of directly measuring the charged particle energy,
Poor accuracy and poor practicality.

Further, in Japanese Patent Laid-Open No. 9-265937, in order to directly measure the charged particle energy (charged particle energy) incident on the material substrate to be processed, fine through holes through which plasma does not enter the material substrate to be processed. Is provided, an energy analyzer for charged particles is provided behind the through hole, and the energy analyzer is maintained at the same high-frequency electric field as that of the material substrate to be processed.

However, in this method, the measuring device itself has a size comparable to that of the plasma processing apparatus, and in order to bring the entire device into a floating potential state and bring it to the same potential as the substrate to be processed, a peripheral circuit is required. However, there is a problem in that it is not practical because the configuration requires a large cost.

On the other hand, in Japanese Unexamined Patent Publication No. 9-266199 and Japanese Unexamined Patent Publication No. 8-213374, a small measuring device including at least two kinds of minute analytical elements is used for plasma etching or plasma treatment in a plasma processing apparatus. The material to be processed on which the film is deposited, the analysis substrate having the same shape as the material to be processed, or the independent substrate exposed to the plasma in the same state as the material to be processed, A method of measuring the energy of charged particles reaching the material substrate to be processed in the state where the same electric field as the high frequency electric field applied to the material substrate is applied is disclosed. These measuring devices include at least an electrode that is exposed to plasma and maintains the same potential as the surface of the material substrate to be processed, an electrode that removes particles having a negative charge when a constant negative potential is applied, and particles having a positive charge. The structure has an electrode for trapping particles, and in some cases, an electrode for rejecting a part of particles having a positive charge to which a variable positive potential is applied. The electrodes other than the trapping electrode are generally composed of mesh-shaped electrodes in order to apply a potential to the charged particles while transmitting a part of the charged particles.

However, since these small measuring devices have a complicated structure, it is difficult to align the meshes of the electrodes, and the transmission area of the charged particles varies among the individual analysis elements. There is a problem. Further, there is a problem that the number of parts is large and the manufacturing cost is high.

Further, Japanese Patent Application Laid-Open No. 9-237697 proposes a method of measuring the energy of charged particles by using an analysis substrate having a micropore structure having a shape similar to that of the material substrate to be processed. In this technique, four electrode layers each made of a conductor layer are laminated on a substrate through an insulating layer, and three electrode layers near the surface of the electrode layers are penetrated to reach the surface of the lowermost electrode layer. For example, the measuring element is formed by forming a plurality of fine holes having a diameter of 0.6 μm.
The outermost electrode layer is set to the same potential as the substrate, a constant negative potential is applied from the surface to the second electrode layer to exclude particles having a negative charge, and the third electrode layer is made variable. As an electrode that applies a positive potential and repels some of the particles with a positive charge,
Further, the lowermost electrode layer is used as an electrode for capturing particles having a positive charge that have passed through the fine pores. According to this technique, since the measuring element is manufactured by a semiconductor process for manufacturing an LSI or the like, it is possible to manufacture a measuring element with a small displacement between electrodes.

[0011]

However, in the technique disclosed in Japanese Patent Laid-Open No. 9-237697, since the measuring element is formed by the semiconductor process, the film thickness of each conductor portion of the measuring element is about. There is a problem that the thickness is as thin as 0.2 μm and the plasma etching resistance is inferior, and the plasma treatment for several minutes does not serve as a measuring device. Moreover, since the thickness of the insulating layer, that is, the distance between the electrodes is small, when a voltage of 200 V or more is applied between the electrodes under a low pressure in an etching apparatus or the like, an inter-electrode discharge occurs and it becomes impossible to measure charged particles. There is a problem. Generally, to etch an oxide film,
Although it is necessary to use charged particles accelerated with an acceleration voltage of about 1 kV, this measurement device cannot measure charged particles accelerated with this voltage of 1 kV. Due to such a problem, this measuring element is inferior in practicability, and has not reached the stage of being regularly used for the purpose of process control in an actual mass production factory.

As an application example of the technique disclosed in Japanese Unexamined Patent Publication No. 9-237697, a measuring element having the same structure as this measuring element with a large size of each part is manufactured, and the life of the measuring element and the withstand voltage between electrodes are measured. There are possible ways to improve.

However, if the size of the measuring element is increased, the measuring element cannot be manufactured by a semiconductor process. Generally, in the machining technology that does not use the semiconductor process, the minimum processing dimension of the micro hole is 1 diameter.
The limit is 30 μm. Therefore, for example, when a positive potential for excluding particles having a positive charge is applied to the electrode of the third layer, the potential drops in the fine holes, and it becomes difficult to analyze charged particles having a desired energy. .

The present invention has been made in view of the above problems, and is a charged particle analyzer for measuring the energy of charged particles incident on a substrate in a plasma processing apparatus, which is small in size in the plasma processing apparatus. A charged particle analyzer that can be installed in any location, has high accuracy and good durability, has a withstand voltage between electrodes of 1 kV or more, and is strong enough to withstand plasma irradiation for a long time, and a simple charged particle analyzer. A method for manufacturing a charged particle analyzer that can be manufactured at low cost and that can perform highly accurate alignment of each electrode without using a semiconductor process, and a charged particle analyzer that uses this charged particle analyzer. It is intended to provide an analytical method and method.

[0015]

A charged particle analyzer according to the present invention is used in a plasma generator and is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma. The first electrode plate, the first insulating plate, the second electrode plate, the second insulating plate, the third electrode plate and the third insulating plate are laminated in this order from the plasma side, A third electrode plate and the first and second electrode plates excluding a third insulating plate, and a laminated body having a through hole formed by processing the first and second insulating plates at the same time; Means for holding the first electrode plate and the substrate at the same potential, and the potential of the second electrode plate for the first electrode plate.
A first circuit for holding a constant negative potential with respect to the electrode plate, and changing the potential of the third electrode plate in a potential range higher than that of the first electrode plate. A second circuit for measuring a current flowing into the third electrode plate at a potential.

In the present invention, the first electrode plate is exposed to the plasma while being held at the same potential as the substrate, so that the first electrode plate is exposed under the same conditions as the substrate. Irradiation of charged particles by plasma is possible. Thereby, the energy of the charged particles with which the substrate is irradiated can be accurately analyzed. Further, the first circuit holds the electric potential of the second electrode plate at a constant negative electric potential with respect to the first electrode plate, thereby excluding charged particles having a negative charge from the through hole. You can As a result, it is possible to analyze the charged particles having a positive charge irradiated by the plasma with high accuracy. Furthermore, by applying a higher potential than the first electrode plate to the third electrode plate by the second circuit,
A part of the charged particles having a positive charge can be rejected from the through hole. At this time, the charged particles having a positive charge which are not rejected are trapped by the third electrode plate, and a current generated by the trapped charged particles is captured. Is measured by the second circuit, it is possible to measure the incident amount of charged particles having an energy of a certain value or more. Furthermore,
The energy distribution of the incident charged particles can be measured by changing the potential of the third electrode plate by the second circuit. Furthermore, by applying a potential for repelling a part of the charged particles having a positive charge to the third electrode plate having no through hole, the potential drop in the through hole is prevented and the charged particle is analyzed. Can be performed with high precision. Furthermore, since the charged particle analyzer of the present invention has a simple structure, it can be miniaturized, and therefore can be installed at any place in the plasma processing apparatus.

It is preferable that the first to third insulating plates have a thickness of 10 μm or more, and the first to third electrode plates are metal plates having a thickness of 1 μm or more.

As a result, it is possible to realize the durability to withstand the plasma etching for a long time and to realize the withstand voltage between the electrodes of 1 kV or more.

The method of manufacturing a charged particle analyzer according to the present invention is used in a plasma generator and is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma. A first stacking step of stacking a first electrode plate, a first insulating plate, a second electrode plate and a second insulating plate in this order to form a first stacked body; and the first stacked body A step of forming a plurality of holes penetrating the first laminated body, and superimposing a third electrode plate and a third insulating plate on the surface of the first laminated body on the second insulating plate side in this order. A second stacking step of forming a second stack of layers, a step of mounting the second stack on a substrate, and a constant potential of the second electrode plate with respect to the first electrode plate. Connecting the first circuit for holding the negative potential of the second electrode plate to the second electrode plate; The second circuit for measuring the current flowing into the third electrode plate at each potential of the third electrode plate by changing the potential of the electrode plate in a higher potential range than that of the first electrode plate. And the step of connecting to the electrode plate of No. 3.

In the present invention, by providing a step of forming a plurality of holes penetrating the first laminated body after the first laminating step, the first electrode plate and the first insulating plate are provided. The holes can be formed in the second electrode plate and the second insulating plate simultaneously and in a self-aligned manner. Therefore, the charged particle analyzer can be simply and highly accurately manufactured without the positions of the holes being displaced between the first and second electrode plates and the first and second insulating plates.

In the step of forming the plurality of through holes, the through holes can be formed by drilling or laser irradiation. As a result, the through holes can be formed efficiently and highly accurately.

The charged particle analysis method according to the present invention is used in a plasma generator and is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma. A first insulating plate, a second electrode plate, a second insulating plate, a third electrode plate, and a third insulating plate are laminated in this order from the plasma side, and the third electrode plate and the third insulating plate No. 3, the first and second electrode plates except the insulating plate, and a laminated body having a through hole formed by simultaneously processing the first and second insulating plates; the first electrode plate; A means for holding the substrate at the same potential, a first circuit for holding the potential of the second electrode plate at a constant negative potential with respect to the first electrode plate, and a potential of the third electrode plate In a potential range higher than that of the first electrode plate, And a second circuit for measuring a current flowing into the third electrode plate at each potential of the electrode plate, the potential of the first electrode plate is the same as the potential of the substrate. And driving the first circuit to set the potential of the second electrode plate to a negative potential with respect to the potential of the first electrode plate to eliminate charged particles having a negative charge from the through hole. And a step of driving the second circuit to change the potential of the third electrode plate in a potential range higher than the potential of the first electrode plate, and Rejecting a part and trapping the rest, measuring a current value of a current flowing into the third electrode by the second circuit, and the current with respect to a change in voltage applied to the third electrode And a step of measuring a first-order differential value of the value. That.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. This embodiment is merely one form of the means for realizing the present invention, and the contents of the present invention are not limited to the materials, shapes, processing methods, and the like shown in this embodiment.

First, a method of manufacturing the charged particle analyzer according to this embodiment will be described. 1A to 1C and FIGS. 2A to 2C are cross-sectional views showing a method of manufacturing the charged particle analyzer according to this embodiment in the order of steps.

First, as shown in FIG. 1 (a), a first copper plate 11c is formed on a first polyimide plate 12c as a thin film (not shown, hereinafter referred to as a thermoplastic resin thin film) made of a thermoplastic resin having a thickness of 10 μm. ) Via the first copper plate 11
A basic laminated structure 14 including c and the first polyimide plate 12c is produced. Similarly, the second copper plate 21c is overlaid on the second polyimide plate 22c via a thermoplastic resin thin film (not shown), and the basic laminated structure 24 including the second copper plate 21c and the second polyimide plate 22c is formed. To make.
At this time, the thickness of each of the copper plates 11c and 21c is about 50 μm.
m, and the thickness of each of the polyimide plates 12c and 22c is about 125 μm. Further, the copper plate 11c and the polyimide plate 12c are processed into a rectangle having a length of about 50 mm and a width of about 45 mm.
Is processed into a square having a length of about 50 mm and a width of about 50 mm.

Next, the basic laminated structure 14 is provided with a thermoplastic resin thin film (not shown) so that the three sides of the basic laminated structure 14 coincide with the three sides of the basic laminated structure 24. Stack on body 24. At this time, the entire surface of the copper plate 11c arranged in the outermost layer may be exposed,
In this embodiment, in order to define the electrode area and reduce unnecessary metal exposed portions, the polyimide layer 10 having the openings 10a is formed on the copper plate 11c so that only a part of the copper plate 11c is exposed. To

Further, the copper plates 11c and 21c can be electrically contacted with the outside independently.
The contact 2 is applied to the exposed portion 21a of the copper plate 21c generated when the basic laminated structure 14 is superposed on the basic laminated structure 24.
3 is formed. Further, a part of the polyimide layer 10 is removed to expose a part of the copper plate 11c other than the opening 10a, and the contact 13 is formed on the exposed part of the copper plate 11c. These contacts form openings in the polyimide layer 10 that reach the copper plate 11c.
0, the copper plate 11c, and the polyimide plate 12c can be formed by forming an opening reaching the copper plate 21c.
Furthermore, in order to prevent the edges of the copper plates 11c and 21c from coming into contact with plasma, the copper plates 11c and 21c
The outer peripheral portion of c is covered with a polyimide layer 15 to form a copper plate 11c.
And 21c are sealed. Thereafter, each copper plate and each polyimide plate are adhered to each other by pressing the laminated structure while heating, and the laminated body 4 including the basic laminated structure 14, the basic laminated structure 24 and the polyimide layers 10 and 15 is formed.
Form 0.

Next, as shown in FIG. 1B, the laminated body 4
For 0, 400 fine holes 41 are formed by a drill having a processing diameter of 150 μm. Since this processing is self-alignment processing that is performed simultaneously for each layer of the laminated body 40, variations in the processing diameter and processing position of the hole 41 in each layer do not occur. The holes 41 may be formed by laser irradiation instead of the drill. Note that, in this case, the self-alignment processing is processing in which, when the positions of the holes in a certain layer are determined, the positions of the holes in the other layer are determined in a self-aligned manner. In this embodiment, since the holes are processed after the layers are laminated, the holes are self-aligned.

At this time, the copper plate 11c having the holes 41 formed therein
Is the first electrode plate 11. Similarly, the copper plate 21c in which the hole 41 is formed, the polyimide plates 12c and 22c,
The second electrode plate 21, the first insulating plate 12, and the second insulating plate 22 are used.

Next, as shown in FIG. 1C, the third copper plate 31 is superposed on the third polyimide plate 32 via a thermoplastic resin thin film (not shown), and the third copper plate 31 and A basic laminated structure 34 made of the third polyimide plate 32 is produced. At this time, the thickness of the third copper plate 31 is about 50 μm.
m, and the thickness of the third polyimide plate 32 is 125 μm.
Is. Further, the shapes of the third copper plate 31 and the third polyimide plate 31 are processed into a rectangle having a length of about 50 mm and a width of about 55 mm.

Next, the three sides of the basic laminated structure 34 are made to coincide with the three sides of the basic laminated structures 14 and 24.
The basic laminated structure 34 is superposed on the laminated body 40 in which the fine holes 41 are formed via a thermoplastic resin thin film (not shown), and is bonded by thermocompression bonding. Next, the contact 33 is provided on the exposed portion 31a of the third copper plate 31 generated during this superposition. Further, the outer peripheral portions of the third copper plate 31 and the third polyimide plate 32 are covered with the polyimide layer 15.
As a result, the basic laminated structure 14 in which the holes 41 are formed,
24 and the basic laminated structure 34, the polyimide layers 10 and 15 and the laminated body 42 having three layers of metal electrodes composed of the contacts 13, 23 and 33 are formed. At this time, the third copper plate 31 is used as the third electrode plate 31, and the third polyimide plate 32 is used as the third insulating plate 32.

Next, as shown in FIG. 2A, a laminate 42 is placed on a silicon wafer 51, which is a material substrate to be processed, which is placed in a chamber of a plasma processing apparatus (not shown) and processed by plasma. Is mounted and thermocompression bonded.

Next, as shown in FIG. 2B, the laminated body 4
Lead wires 1 to the contacts 13, 23 and 33 of 2 respectively
6, 26 and 36 are connected, and these wirings are wired as a measurement circuit outside the chamber of the plasma processing apparatus (not shown). Specifically, the wiring 16 is wired so that the potential of the electrode plate 11 is the same as that of the silicon wafer 51,
The wiring 26 is connected to a first circuit (see FIG. 5A) for making the potential of the electrode plate 21 negative with respect to the potential of the electrode plate 11, and the wiring 36 connects the potential of the electrode plate 31 to the electrode plate. It is connected to the second circuit (see FIG. 5A) for measuring the charged particle current flowing into the electrode plate 31 while changing the potential range higher than the potential of 11.

Next, as shown in FIG. 2C, the contacts 13, 23 and 33, the connecting portion between the contact 13 and the lead wiring 16, the connecting portion between the contact 23 and the lead wiring 26, and the contact 33 and the lead wiring. A protective insulating film 61 is formed by applying resist or polyimide so as to cover the connection portion with 36 and patterning the formed resist film or polyimide film. As a result, the substrate placed in the chamber of the plasma processing apparatus,
That is, the small charged particle analyzer 43 is formed on the silicon wafer 51.

Next, the structure of the charged particle analyzer according to this embodiment manufactured by the above-described manufacturing method will be described. 3 is a cross-sectional view showing the configuration of the charged particle analyzer according to the present embodiment, FIG. 4 is a plan view showing the configuration of the charged particle analyzer, and FIG. 5A is a configuration of the charged particle analyzer. It is a block diagram showing.

As shown in FIG. 3, a silicon wafer 51, which is a material substrate to be processed, is placed in a chamber (not shown) of the plasma processing apparatus and is processed by plasma.
A charged particle analyzer 43 is installed.

In the charged particle analyzer 43, an insulating plate 32 is provided and adhered to a silicon wafer 51 by a thin film (not shown, hereinafter referred to as a thermoplastic resin thin film) made of a thermoplastic resin having a thickness of 10 μm. . An electrode plate 31 is provided on the insulating plate 32 and adhered to the insulating plate 32 with a thermoplastic resin thin film (not shown). The insulating plate 32 is for insulating the electrode plate 31 from the silicon wafer 51. The electrode plate 31 is held at a positive potential with respect to the silicon wafer 51, and while rejecting some of the charged particles having a positive charge, It is for capturing the remaining charged particles having a positive charge.

An insulating plate 22 having a hole 22b is provided on the electrode plate 31 and is adhered to the electrode plate 31 by a thermoplastic resin thin film (not shown). The insulating plate 22 is aligned with the hole 22b of the insulating plate 22 on the insulating plate 22. An electrode plate 21 having a hole 21b is provided at a position where the insulating plate 2 is formed by a thermoplastic resin thin film (not shown).
It is glued to 2. The insulating plate 22 is for insulating the electrode plate 21 from the insulating plate 31, and the electrode plate 21 is for excluding charged particles having a negative charge and held at a negative potential with respect to the silicon wafer 51.

On the electrode plate 21, a hole 21b of the electrode plate 21 is formed.
An insulating plate 12 having a hole 12b is provided at a position aligned with and is adhered to the electrode plate 21 by a thermoplastic resin thin film (not shown). Further, an electrode plate 11 having a hole 11b at a position aligned with the hole 12b is provided on the insulating plate 12, and is adhered to the insulating plate 12 by a thermoplastic resin thin film (not shown). The insulating plate 12 is for insulating the electrode plate 11 from the insulating plate 31. The electrode plate 11 is held at the same potential as the silicon wafer 51. In this embodiment, the thickness of the electrode plates 11, 21 and 31 is about 50 μm, and the thickness of the insulating plates 12, 22 and 32 is about 125 μm.

Further, the polyimide layer 10 is formed on the electrode plate 11.
The polyimide layer 10 is provided with an opening 10a so that a certain region of the electrode plate 11 including the hole 41 is exposed to plasma. Further, on the side surface of the charged particle analyzer 43, the electrode plates 11, 21 and 3 are provided.
A polyimide layer 15 is provided so as to cover 1.

The holes 22b, 21b, 12b and 11b are
Each of them has a diameter of 150 μm and is provided with 400 pieces each. The positions of the holes overlap with each other in plan view, and
b, 21b, 12b and 11b are integrated into one hole 4
Make up one.

As shown in FIG. 3, the hole 41 is vertically provided in the charged particle analyzer 43, and the upper portion thereof is open to the outside for taking in charged particles.
The bottom of the hole 41 is composed of an electrode plate 31 for trapping charged particles.

Further, as shown in FIG. 4, 400 holes 41 are formed in the charged particle analyzer 43 and arranged in a grid pattern in a plan view. In FIGS. 3 and 4, the number of holes 41 is drawn smaller than the actual number in order to make the drawings easy to see.

Further, as shown in FIGS. 3 and 4, contacts 13, 21 are respectively provided at the end portions of the electrode plates 11, 21 and 31, respectively.
23 and 33 are provided and contacts 13, 23 and 3
3 is connected to wirings 16, 26 and 36, respectively.

Furthermore, as shown in FIG. 5A, the wiring 16 is wired so that the potential of the electrode plate 11 is the same as that of the silicon wafer 51, and the wiring 26 is the same as the potential of the electrode plate 21. It is connected to a first circuit 62 provided outside the chamber to make the potential of the plate 11 negative.
The first circuit 62 is composed of a constant voltage power supply. The wiring 36 changes the potential of the electrode plate 31 in a potential range higher than the potential of the electrode plate 11, and the electrode plate 3
1 is connected to a second circuit 63 provided outside the chamber for measuring the charged particle current flowing into the device 1. The second circuit 63 is configured by connecting a variable voltage power source and an ammeter in series.

The contacts 13, 23 and 33, the connecting portion between the contact 13 and the lead wiring 16, the connecting portion between the contact 23 and the lead wiring 26, and the contact 3
A protective insulating film 61 is provided so as to cover the connecting portion between the wiring 3 and the lead wiring 36.

Next, the charged particle analyzer 4 according to the present embodiment.
A method for analyzing charged particles using 3 will be described. First, as shown in FIG. 3 and FIG. 5A, the charged particle analyzer 43 is installed in an actual plasma etching device (not shown), the wiring 16 is connected to the silicon wafer 51, and the wiring 26 is first. The circuit 36 is connected to the silicon wafer 51, and the wiring 36 is connected to the silicon wafer 51 via the second circuit 63. Then, the same potential as that of the silicon wafer 51 is applied to the electrode plate 11 of the charged particle analyzer 43 to make the irradiation conditions of the charged particles on the electrode plate 11 the same as the irradiation conditions of the charged particles on the silicon wafer 51, and the plasma is Preventing entry into the hole 41. Further, the first circuit 62 gives the electrode plate 21 a potential that is a negative potential with respect to the electrode plate 11, and the charged particles having a negative charge such as electrons are repelled from the holes 41. Furthermore, the second circuit 63
By applying a potential that is a positive potential with respect to the electrode plate 11 to the electrode plate 31, the charged particles having a positive charge entering the hole 41 are less than the threshold value determined by the potential of the electrode plate 31. Holes 41 for charged particles having energy
The charged particles having energy higher than the threshold value are captured by the electrode plate 31, and the magnitude of the current caused by the captured charged particles can be measured by the second circuit.

In such a state, by generating a high frequency electric field in the plasma processing apparatus to generate plasma, the plasma is made incident on the inside of the hole 41 and the electrode plate 31.
It is possible to analyze the energy distribution of charged particles trapped in the. At this time, the energy distribution of the incident particles can be measured by obtaining the first-order differential value of the current value of the charged particles with respect to the potential applied to the electrode plate 31. Further, the measurement result of the energy distribution thus obtained is normalized by the current value when the voltage for repulsing the positive ions applied to the electrode plate 31 is set to 0, so that the ions having each energy are The absolute value of the density can be measured. Even when the voltage applied to the electrode plate 31 is 0, the voltage for repelling negative ions (electrons) is applied to the electrode plate 21, so the electron current does not contribute to the measured value of the current. Furthermore, if the type of ion can be specified in advance, the mass of the ion can be determined. Accordingly, even when a plurality of types of ions coexist, the energy peak can be analyzed by performing fitting by simulation. The type of ion can be specified by, for example, an emission analysis method.

In the charged particle analyzer 43 of this embodiment, the holes 41 are formed by applying a positive potential to the electrode plate 31.
Some of the charged particles with a positive charge are excluded from the inside. Since the electrode plate 31 forms the bottom of the hole 41, the potential drop in the hole 41 does not occur. Therefore, the energy distribution of the charged particles can be analyzed with high accuracy. Further, since the charged particle analyzer 43 is small, it can be installed at any place in the plasma processing apparatus, and the material processing performance by plasma can be evaluated. In addition, since copper plates and polyimide plates each having a thickness of more than 10 μm, which are commercially available products, are used as the electrode plate and the insulating plate, respectively, a thin film having a thickness of 1 μm or less produced by a semiconductor process such as LSI is used. In comparison, it is possible to realize a sufficient life for plasma irradiation, and it is possible to realize a withstand voltage between electrodes of 1 kV or more.

According to the method of manufacturing the charged particle analyzer 43 of this embodiment, the hole 41 is formed by the machining means after the step of adhering the electrode plates 11 and 21 and the insulating plates 12 and 22. Positioning can be performed in a self-aligning manner as compared with a method of laminating mesh films in which holes are formed, and even when the diameters and the processing positions are deviated between the holes 41, the diameters between the layers in each hole 41 The processing position does not shift, and it is possible to easily perform highly accurate processing. In addition, since the electrode plate 31 for capturing the charged particles does not have a hole, it is not necessary to perform alignment in bonding, and the charged particle analyzer 43 can be easily manufactured only by bonding.

Furthermore, since commercially available products are used as the electrode plate and the insulating plate, and machining such as drilling or laser irradiation can be used to form the holes 41, compared with the case where the charged particle analyzer is manufactured by a semiconductor process. A charged particle analyzer can be manufactured very simply and at low cost.

According to the charged particle analysis method using the charged particle analyzer 43 of this embodiment, an electrode plate for rejecting a part of the charged particles having a positive charge and an electrode for trapping the remaining charged particles. The plate is the same electrode plate 31, and the electrode plate 3
Since 1 forms the bottom of the hole 41, a high analysis accuracy can be realized without a potential drop occurring in the hole 41.

In this embodiment, the electrode plate 11 is composed of the copper plate 11c, but the electrode plate 11 is formed by coating the polyimide plate 12c with a metal thin film by vacuum deposition or plating. You may.

Further, in the present embodiment, the example in which the charged particle analyzer 43 is mounted on the silicon wafer 51 which is the material substrate to be processed has been shown, but in the present invention, the charged particle analyzer 43 is to be processed. It may be mounted on an analysis substrate having the same shape as the material substrate or on an independent electrode exposed to plasma in the same state as the material substrate to be processed.

[0055]

EXAMPLES The effects of the examples of the present invention will be specifically described below in comparison with comparative examples that depart from the scope of the claims. The charged particle analyzer 43 according to the present embodiment described above (see FIG. 5A) was used as the apparatus according to the present invention. In the apparatus of this embodiment of the present invention, the electrode plate 11 is set to the same potential as the silicon wafer 51, and the electrode plate 21 is set to −40.
A negative potential of V was used, and the electrode plate 31 was used as a variable positive potential and an electrode for trapping charged particles. The diameter of the holes 41 was 150 μm.

Further, the comparative device is disclosed in Japanese Patent Laid-Open No. 9-237.
A conventional charged particle analyzer having four electrodes as shown in Japanese Patent No. 697 was used. FIG. 6A is a block diagram showing the configuration of this comparative example device. A fourth insulating plate 78 is provided on the substrate 79, and a fourth insulating plate 78 is provided on the fourth insulating plate 78.
Electrode plate 77 is provided, a third insulating plate 76 is provided on the fourth electrode plate 77, a third electrode plate 75 is provided on the third insulating plate 76, and a third electrode plate 75 is provided. The second insulating plate 74 is provided on the second insulating plate 74, the second electrode plate 73 is provided on the second insulating plate 74, and the first insulating plate 7 is provided on the second electrode plate 73.
2 is provided, and the first electrode plate 71 is provided on the first insulating plate 72.
Is provided. In addition, the first electrode plate 71, the first insulating plate 72, the second electrode plate 73, the second insulating plate 74, the third
The electrode plate 75 and the third insulating plate 76 are provided with a plurality of holes 80 penetrating them. Further, the first electrode plate 71 is connected to the substrate 79 by the wiring 81, the second electrode plate 73 is connected to the substrate 79 via the constant voltage power source 82, and the third electrode plate 75 is connected to the variable voltage power source 83. The fourth electrode plate 77 is connected to the substrate 79 via the ammeter 84.

In the charged particle measuring apparatus as shown in FIG. 6A, the potential of the first electrode plate 71 is set to the same potential as that of the substrate 79 by the wiring 81, and a constant voltage power source is used to eliminate electrons in the holes 80. The potential of the second electrode plate 73 is set to a negative potential of −40 V with respect to the first electrode plate 71 by 82, and the third voltage is changed by the variable voltage power source 83 in order to exclude some of the positively charged particles in the hole 80. The potential of the electrode plate 75 was set to a positive potential with respect to the electrode plate 71. The diameter of the holes 80 was 150 μm. In such a state, the potential of the third electrode plate 75 is changed by the variable voltage power source 83, and at each potential of the third electrode plate 75, the charged particles that have passed through the holes 80 are captured by the fourth electrode plate 77. Then, the current value due to the charged particles was measured by the ammeter 84.

A simulation of charged particle energy distribution measurement was carried out using the above-mentioned apparatus of the embodiment and the apparatus of the comparative example. FIG. 7 is a graph showing the energy distribution of incident particles in this simulation, where the horizontal axis represents the ion energy and the vertical axis represents the ion distribution probability. In this simulation, the energy distribution of the incident charged particles is set to the energy distribution shown in FIG. 7, and the potential of the electrode plates (31, 75) for repulsing positive ions is changed while the holes (4
The accuracy of the measuring element was evaluated by calculating the current due to the charged particles flowing through the electrode plate (31, 77) after passing through 1, 80) and comparing the calculation result with the energy distribution of the incident charged particles described above. .

The simulation was performed by the method described below. Ions were randomly extracted from a group of ions having an energy distribution as shown in FIG. 7, and the ions were ejected from a position 20 μm above the hole 41 of the charged particle analyzer 43. The number of ion samples was 100,000. Also, the hole 4
The potential inside 1 was assumed not to change with the incidence of ions. For each of the ions thus ejected, the effect of the potential distribution in the hole 41 on the motion of the ion is sequentially calculated, and the ion is collided with any surface in the hole 41 until it collides with the surface. Calculated the orbit of. Then, finally, the number of ions colliding with the lowermost electrode (electrode 31) was counted and converted into a current value.

Next, the simulation result will be described. FIG. 5 (b) is a graph showing the result of simulation prediction of the measurement result of the charged particle energy distribution by the apparatus of the present invention (charged particle analyzer 43) shown in FIG. 5 (a). In FIG. 5B, the unit of the vertical axis is the primary differential value of energy. On the contrary,
In FIG. 7, the unit of the vertical axis is the one obtained by converting the first-order differential value of ion energy into the ion distribution probability.

As shown in FIG. 5B, in the apparatus of the embodiment of the present invention, an energy distribution having a double peak structure similar to the energy distribution of incident charged particles (see FIG. 7) can be obtained by the simulation. I was able to. Therefore, it was shown that the charged particle analyzer 43 according to the present embodiment is capable of highly accurate analysis.

On the other hand, in FIG. 6B, the horizontal axis represents the ion energy, and the vertical axis represents the ion distribution, which is the first derivative of the ion energy. The comparison shown in FIG. It is a graph which shows the result of having predicted the measurement result of the charged particle energy distribution by an example apparatus by simulation. If the device of the comparative example is operating ideally, the first derivative of the current value of the charged particles flowing into the fourth electrode plate 77 with respect to the potential of the third electrode plate 75 is obtained to obtain the result shown in FIG. The same energy distribution as shown for the incident charged particles should be obtained. However, in the simulation result shown in FIG. 6B, many peaks not present in the energy distribution of the incident charged particles shown in FIG. 7 were observed. Therefore, FIG.
It was shown that the energy distribution of incident charged particles cannot be accurately measured with the analyzer shown in (a). This is hole 8
Since the diameter of 0 is as large as 150 μm, the third electrode plate 75
Since the electric potential in the hole 80 is reduced by about several hundreds V with respect to the electric potential of, the electric potential for repulsing a part of the charged particles in the hole 80 largely deviates from the set potential, and the repulsion effect of the charged particles is reduced. This is because it is not working sufficiently. In order to correct this in the device structure as shown in FIG. 6A, it is necessary to reduce the diameter of the hole 80 to 1 μm or less, but such processing can only be performed by a semiconductor process. This leads to a shortened life and a large increase in manufacturing costs.

Further, in order to grasp the insulation characteristics between the electrodes of the apparatus of the present invention (charged particle analyzer 43), the breakdown voltage between the contacts was measured at atmospheric pressure, and a breakdown voltage of 2 kV or higher was recognized. It was Even when the charged particle analyzer 43 is installed in the plasma etching apparatus by the wiring as shown in FIG. 5A and a voltage of 1 kV is applied between the electrodes in a vacuum of about 5 mTorr, no discharge occurs. I was able to confirm that. Further, no deterioration of the measurement data was observed even after the impact of the charged particles accelerated by the acceleration voltage of about 1 kV for a total of 1 hour or more.

[0064]

As described in detail above, according to the present invention,
The electrode plate for repelling a part of the charged particles having a positive charge from the inside of the hole and the electrode plate for trapping the remaining charged particles are the same electrode plate, and the electrode plate forms the bottom of the hole. As a result, a high analysis accuracy can be achieved without a potential drop in the hole, and because it is small, it can be easily installed in the plasma processing apparatus, and the electrode plate and insulating plate have a sufficient thickness. Therefore, it is possible to provide a charged particle analyzer having a sufficient lifetime and a withstand voltage between electrodes. In addition, the charged particle analyzer can be manufactured at low cost and with high accuracy by forming holes by machining means after adhering the electrode plate and the insulating plate.

[Brief description of drawings]

1A to 1C are cross-sectional views showing a method of manufacturing a charged particle analyzer according to an embodiment of the present invention in the order of steps.

2 (a) to 2 (c) are cross-sectional views showing the next step of FIG. 1 in the order of steps in the method of manufacturing the charged particle analyzer according to this embodiment.

FIG. 3 is a sectional view showing the configuration of a charged particle analyzer according to this embodiment.

FIG. 4 is a plan view showing the configuration of a charged particle analyzer according to this embodiment.

5A and 5B are diagrams showing the configuration and operation of the charged particle analyzer according to the embodiment of the present invention, FIG. 5A is a block diagram showing the configuration of the charged particle analyzer according to the present embodiment, and FIG.
FIG. 5 is a graph showing the simulation result of the operation of this charged particle analyzer, in which the horizontal axis represents the ion energy and the vertical axis represents the ion distribution probability.

FIG. 6 is a diagram showing the configuration and operation of a conventional charged particle analyzer, (a) is a block diagram showing the configuration of this charged particle analyzer, and (b) shows ion energy on the horizontal axis, It is a graph which shows the simulation result of operation | movement of this charged particle analyzer which takes the distribution probability of ion on a vertical axis | shaft.

FIG. 7 is a graph showing the energy distribution of incident particles in a simulation, where the horizontal axis represents ion energy and the vertical axis represents ion distribution probability.

[Explanation of symbols]

10: Polyimide layer 10a: Opening of polyimide layer 10 11, 21, 31; electrode plate 11a, 21a, 31a; exposed portion of the electrode plate 11b, 21b; holes 11c, 21c, 31c; copper plate 12, 22, 32; insulating plate 12b, 22b; holes 12c, 22c, 32c; polyimide plate 13, 23, 33; contacts 14, 24, 34; basic laminated structure 15; Polyimide layer 16, 26, 36; Lead wiring 40; laminated body 41; hole 42; laminated body 43; Charged particle analyzer 51; Silicon wafer 61; Protective insulating film 62; First circuit 63; Second circuit 71, 73, 75, 77; electrode plate 72, 74, 76, 78; insulating plate 79; substrate 80; hole 81; Wiring 82; Constant voltage power supply 83; Variable voltage power supply 84; Ammeter

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) // C23C 16/50 H01L 21/302 B (72) Inventor Motoharu Yamashita 1-chome, Takatsukadai, Nishi-ku, Kobe-shi, Hyogo No. 5-5 Kobe Steel Co., Ltd., Kobe Research Institute (72) Inventor Kenichi Inoue 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Kobe Steel Co., Ltd. Kobe Research Center F-term (reference) 4K030 FA01 KA39 5C038 KK15 5F004 BC08

Claims (14)

[Claims] 1. A charged particle analyzer for use in a plasma generator, which is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma, comprising: a first electrode plate, a first insulating plate, and a second insulating plate. Of the electrode plate, the second insulating plate, the third electrode plate and the third insulating plate are laminated in this order from the plasma side, and the third electrode plate and the third insulating plate are excluded. A first and second electrode plates and a laminated body having a through hole formed by simultaneously processing the first and second insulating plates, and the first electrode plate and the substrate are held at the same potential. Means, a first circuit for holding the potential of the second electrode plate at a constant negative potential with respect to the first electrode plate, and a potential of the third electrode plate from the first electrode plate Also in the high potential range, the first electrode is changed at each potential of the third electrode plate. A second circuit for measuring a current flowing into the electrode plate of No. 3, and a charged particle analyzer. 2. The thickness of the first to third insulating plates is 10
The charged particle analyzer according to claim 1, wherein the charged particle analyzer has a thickness of at least μm. 3. The first to third electrode plates have a thickness of 1 μm
It consists of said metal plate, The claim 1 or 2 characterized by the above-mentioned.
The charged particle analyzer according to item 1. 4. The first electrode plate is the first insulation plate, the first insulation plate is the second electrode plate, and the second insulation plate is the second insulation plate.
4. The electrode plate according to claim 1 is adhered to the second insulating plate, and the second insulating plate is adhered to the third electrode plate via a thermoplastic resin, respectively. The charged particle analyzer according to item 1. 5. A first contact for connecting the first electrode plate to the substrate, a second contact for connecting the second electrode plate to the first circuit, and the first contact. 5. A charged particle analyzer according to claim 1, further comprising a third contact for connecting the third electrode plate to the second circuit. 6. A method of manufacturing a charged particle analyzer, which is used in a plasma generator and is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma, comprising: a first electrode plate and a first insulating plate. A first laminating step of forming a first laminated body by laminating a second electrode plate and a second insulating plate in this order, and a plurality of penetrating the first laminated body through the first laminated body. Second step of forming a second laminated body by sequentially stacking a third electrode plate and a third insulating plate on the surface of the first laminated body on the second insulating plate side. And a step of mounting the second laminated body on a substrate, and a first circuit for holding the potential of the second electrode plate at a constant negative potential with respect to the first electrode plate. The step of connecting to the second electrode plate, and setting the potential of the third electrode plate higher than that of the first electrode plate. Connecting a second circuit to the third electrode plate, the second circuit measuring the current flowing into the third electrode plate at each potential of the third electrode plate, which is varied in a large potential range. A method of manufacturing a characteristic charged particle analyzer. 7. The method of manufacturing a charged particle analyzer according to claim 6, wherein an insulating plate having a thickness of 10 μm or more is used as each of the first to third insulating plates. 8. The method for manufacturing a charged particle analyzer according to claim 6, wherein a metal plate having a thickness of 1 μm or more is used as each of the first to third electrode plates. 9. The method according to claim 6, wherein the first electrode plate is laminated on the first insulating plate by coating a metal thin film by a vacuum deposition method or a plating method. Method for manufacturing charged particle analyzer. 10. The metal thin film having a thickness of 1 μm or more, and the metal plates having a thickness of 1 μm or more are used as the second and third electrode plates. Method for manufacturing charged particle analyzer. 11. The method according to claim 6, wherein in the first and second laminating steps, the bonding between the plates is performed by thermocompression bonding through a thermoplastic resin. A method for manufacturing the charged particle analyzer described. 12. The method of manufacturing a charged particle analyzer according to claim 6, wherein in the step of forming the plurality of holes, the holes are formed by a drill. 13. The method of manufacturing a charged particle analyzer according to claim 6, wherein in the step of forming the plurality of holes, the holes are formed by laser irradiation. 14. A charged particle analysis method for use in a plasma generator, wherein the first electrode plate is arranged on a substrate irradiated with the plasma to evaluate the state of the plasma.
A first insulating plate, a second electrode plate, a second insulating plate, a third electrode plate, and a third insulating plate are laminated in this order from the plasma side, and the third electrode plate and the third insulating plate And the first and second electrode plates except the third insulating plate
Laminate having a through hole formed by simultaneously processing the insulating plate, means for holding the first electrode plate and the substrate at the same potential, and a potential of the second electrode plate for the second electrode plate. A first circuit for holding a constant negative potential with respect to the first electrode plate, and changing the potential of the third electrode plate in a potential range higher than that of the first electrode plate. A second circuit for measuring a current flowing into the third electrode plate at each potential, and making the potential of the first electrode plate the same as the potential of the substrate. Driving the first circuit to set the potential of the second electrode plate to a negative potential with respect to the potential of the first electrode plate to eliminate charged particles having a negative charge from the through hole, The second circuit is driven to set the potential of the third electrode plate to the first electrode plate. Changing a potential range higher than the potential to reject a part of the charged particles having a positive charge from the inside of the through hole and trap the remaining part, and a current of a current flowing into the third electrode by the second circuit. A charged particle analysis method comprising: a step of measuring a value; and a step of measuring a first-order differential value of the current value with respect to a change in a voltage applied to the third electrode.