JP2003031615A - Mounting structure of semiconductor device and method of mounting the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mounting structure of semiconductor device and a method of mounting the same semiconductor device in which a bump electrode of a semiconductor element is connected to substrate wiring on a circuit substrate, and the substrate wiring coupled to the bump electrode is largely deformed to assure electrical connection at the connecting part, while a gap between the semiconductor element and substrate wiring is formed thinner to improve reliability of connection at the terminal of the semiconductor element. SOLUTION: The mounting structure of semiconductor device comprises insulating sealing resin 3, a circuit substrate 7 where thermosetting bonding agent 5 is provided between a basic material and substrate wiring 4, a semiconductor element 1 where a plurality of bump electrodes 2 are formed, and connecting part for electrically connecting on the face-down basis the semiconductor element 1 to the substrate wiring via the sealing resin 3. The substrate wiring 4 to be in contact with the bump electrode 2 of semiconductor element is largely deformed at the connecting part by removing the thermosetting bonding agent 5, while the gap between semiconductor element and substrate wiring is formed thinner up to 0.2 times or less the height of bump at the terminal of the semiconductor element.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure for a semiconductor device and a mounting method for mounting the semiconductor device on a circuit board, and more particularly to a mounting structure for a semiconductor device and a semiconductor device by a flip chip method on a circuit board. Regarding the implementation method to be implemented.

[0002]

2. Description of the Related Art In recent years, with the miniaturization and weight reduction of information devices such as notebook personal computers, PDAs, and mobile phones, and the thinning of wireless IC modules such as wireless IC tags and contactless IC cards, semiconductor elements have been incorporated into circuits. There is an increasing need for high-density mounting technology and cost reduction for mounting on a substrate. A flip chip method has been proposed as a mounting method corresponding to this.

The flip chip method is a method for connecting a semiconductor element having a plurality of bump electrodes formed on it to a circuit board with its electrode forming surface face down, and is disclosed in Japanese Patent No. 2502794.

A conventional flip-chip mounting structure will be described with reference to the sectional view of FIG. Circuit board 7 of FIG.
Has a structure in which an ultraviolet curable or thermosetting high-elasticity insulating resin 51 is formed between the base material 6 and the substrate wiring 4. On the circuit board 7, a sealing resin 3 for mounting the semiconductor element 1 face down is applied. On the other hand, a plurality of bump electrodes 2 are formed on the electrode pads of the semiconductor element 1.

First, the plurality of bump electrodes 2 provided on the semiconductor element 1 are aligned with the board wiring 4, and then the semiconductor element 1 is mounted on the circuit board 7 and is pressed to form the sealing resin 3. Cure. At this time, since the sealing resin 3 applied between the bump electrode 2 of the semiconductor element 1 and the substrate wiring 4 is pushed out by pressure, the bump electrode 2 and the substrate wiring 4 are electrically connected.

In this conventional flip-chip mounting structure, since the substrate wiring 4 and the high elastic modulus insulating resin layer 51 which are in contact with the bump electrodes 2 are elastically deformed to be concave, the high elastic modulus insulating resin layer 51 is formed. Due to the elastic recovery force and the contracting force of the sealing resin 3, the electrical connection between the bump electrode 2 and the substrate wiring 4 is stably maintained.

[0007]

However, in this conventional flip-chip mounting structure, pressure is applied to the substrate wiring 4
Also, the high elastic modulus insulating resin 5 is held in an elastically deformed state to ensure electrical connection.

For this reason, the structure is such that the portion other than the wiring portion of the substrate which is in contact with the bump 2 by the pressure is hardly deformed,
Since the gap between the semiconductor element and the substrate wiring in the vicinity of the connection portion and the gap between the semiconductor element and the substrate wiring at the end of the semiconductor element are almost the same, at the edge portion of the semiconductor element, the bonding interface between the sealing resin and the semiconductor element, There is a problem that large tensile stress and shear stress are concentrated on the bonding interface between the sealing resin and the substrate wiring and the bonding interface between the sealing resin and the base material, and the connection reliability is reduced.

Therefore, in order to solve the above problems, the object of the present invention is to greatly deform the substrate wiring contacting the bump electrode at the connection portion to stably secure the electrical connection, and to secure the electrical connection at the end portion of the semiconductor element. Another object of the present invention is to provide a mounting structure and a mounting method for a semiconductor device in which the gap between the wirings of the substrates is made as thin as possible to improve the connection reliability.

[0010]

In order to achieve the above object, the semiconductor device mounting structure according to the present invention is characterized by an insulating sealing resin containing an epoxy resin as a main component, a base material and a substrate wiring. A circuit board provided with a thermoplastic adhesive between them, a semiconductor element having a plurality of bump electrodes formed thereon, and a connecting portion electrically connected to the board wiring face down with the semiconductor element through a sealing resin. A mounting structure of a semiconductor device having: a substrate wiring contacting a bump electrode of a semiconductor element at the connection portion is largely deformed while a thermoplastic adhesive is removed; This is to make the gap thinner than 0.2 times the bump height.

The semiconductor device mounting structure according to the present invention for achieving the above object is characterized in that an insulating adhesive film containing an epoxy resin as a main component and a thermoplastic resin between the base material and the substrate wiring. Mounting of a semiconductor device having a circuit board provided with an adhesive, a semiconductor element having a plurality of bump electrodes formed thereon, and a connecting portion electrically connecting the semiconductor element face down with an adhesive film to the board wiring In the structure, the substrate wiring contacting the bump electrodes of the semiconductor element is largely deformed while eliminating the thermoplastic adhesive at the connecting portion, and the gap between the semiconductor element and the substrate wiring is set at the bump height at the end of the semiconductor element. The purpose is to reduce the thickness to 0.2 times or less.

The above-mentioned insulating adhesive film is an adhesive film containing an epoxy resin as a main component but an epoxy resin containing no conductive particles as a main component.

As a result, at the end of the semiconductor element in which the gap between the semiconductor element and the substrate wiring is thinned to 0.2 times or less of the bump height, the sealing resin or the bonding interface between the adhesive film and the semiconductor element, the sealing resin or Since the structure can reduce the stress generated at the adhesive interface between the adhesive film and the circuit board, the connection reliability can be improved.

Further, the cost can be reduced as compared with the case of using a high-cost anisotropic conductive film, and the electrical connection is stabilized by using an adhesive film containing epoxy resin as a main component containing no conductive particles. It has become possible to secure.

A feature of the method for mounting a semiconductor device according to the present invention to achieve the above object is that an insulating sealing resin containing an epoxy resin as a main component and a thermoplastic resin between the base material and the substrate wiring. A circuit board provided with an adhesive, a semiconductor element having a plurality of bump electrodes formed thereon, and a connecting portion electrically connected to the board wiring face down with the semiconductor element via the insulating sealing resin. In the connection portion, the substrate wiring contacting the bump electrode of the semiconductor element is largely deformed while the thermoplastic adhesive is removed, and the gap between the semiconductor element and the substrate wiring is set to 0 at the bump height at the end of the semiconductor element. 1. A method for mounting a semiconductor device, which is reduced to a thickness of 2 times or less, wherein the sealing resin is preliminarily supplied to the circuit board on a region where a semiconductor element is mounted before connecting the bump electrode and the board wiring, After the board wiring in contact with pump electrode was greatly deformed while excluding the thermoplastic adhesive,
To cure the sealing resin.

A feature of the method for mounting a semiconductor device according to the present invention to achieve the above object is that an insulating adhesive film containing an epoxy resin as a main component and a thermoplastic adhesive between the base material and the board wiring. A circuit board provided with an agent, a semiconductor element having a plurality of bump electrodes formed thereon, and a connecting portion electrically connecting the semiconductor element face down through the insulating adhesive film to the board wiring. In the connection portion, the substrate wiring contacting the bump electrode of the semiconductor element is largely deformed while the thermoplastic adhesive is removed, and the gap between the semiconductor element and the substrate wiring is set to 0.2 mm of the bump height at the end of the semiconductor element. A method for mounting a semiconductor device, which reduces the thickness to less than or equal to twice, wherein the insulating adhesive film is provided on a region where a semiconductor element is mounted before connecting the bump electrodes and the substrate wiring. Temporarily crimped, after the board wiring in contact with the bump electrode is greatly deformed while eliminating thermoplastic adhesive is to cure the adhesive film.

As described above, according to the above configuration,
In a mounting structure of a flip-chip type semiconductor device in which a semiconductor element is mounted face down on a circuit board, the substrate wiring contacting the bump electrode of the semiconductor element at the connection portion is largely deformed while removing the thermoplastic adhesive, At the edge of the device, the gap between the semiconductor device and the board wiring is as thin as 0.2 times the bump height.
The points at which the tensile stress and the shear stress are maximum can be dispersed, and the connection reliability can be improved.

Further, the present invention is a mounting structure of a semiconductor device, wherein a base material of a circuit board is a lower cover sheet and board wiring of the circuit board is an antenna for wireless communication.

Further, the present invention is a wireless IC module characterized in that the semiconductor mounting structure described above and the upper cover sheet are bonded together by using a hot melt agent.

Especially, in information equipment such as a notebook computer, PDA, and mobile phone, and also in a wireless IC module such as a wireless IC tag and a non-contact IC card, reliable connection can be achieved with low resistance without causing connection failure. Is possible.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings and specific description of the embodiments.

[0022]

EXAMPLE 1 FIG. 1 is a sectional view of a mounting structure 101 of a semiconductor device according to an example of the present invention. The structure of this mounting structure 101 includes a sealing resin 3 containing an epoxy resin as a main component, a circuit board 7 provided with a thermoplastic adhesive 5 between a base material 6 and board wiring 4, and a plurality of bump electrodes 2. When mounting the semiconductor element 1 face down with the sealing resin 3 (or the adhesive film 9 of FIG. 5 described later also possible) using the semiconductor element 1 having the above-described structure, the bumps of the semiconductor element 1 are connected at the connecting portions. The substrate wiring 4 in contact with the electrode 2 is largely deformed while eliminating the thermoplastic adhesive 5 to secure a stable electrical connection, and the gap between the semiconductor element 1 and the substrate wiring 4 is secured at the end of the semiconductor element 1. Is thinner than 0.2 times the bump height to improve the connection reliability.

The bump electrode 2 in the figure is formed on the electrode pad of the semiconductor element 1 by an electrically conductive material such as Au by a plating technique or a wire bumping method.

The circuit board 7 is made of a metal such as Au, Al, or Cu on a base material 6 of an insulating resin such as glass epoxy, polypropylene, polyarylate, polyethylene terephthalate (referred to as PET), polyimide or polyamide. An alloy foil containing an element is attached using a thermoplastic adhesive 5 and the substrate wiring 4 is formed by etching using a predetermined mask pattern, or a metal or alloy layer is used on the base material instead of the metal foil. The substrate wiring 4 is formed by growing it by a plating technique.

The thermoplastic adhesive 5 is, for example, a binder resin selected from polyester, nylon, urethane, polyethylene and polypropylene.

FIG. 2 is a metallographic micrograph partially showing a state in which the bump electrode 2 of the semiconductor element 1 of FIG. 1 is electrically connected to the substrate wiring 4. As is clear from this figure, the substrate wiring 4 in contact with the bump electrode 2 of the semiconductor element 1 is deformed while removing the thermoplastic adhesive 5 at the connection portion to ensure stable electrical connection, and At the end (the right end in the figure), the gap between the semiconductor element 1 and the substrate wiring 4 is thinned to 0.2 times or less the bump height, and the semiconductor element 1 and the sealing resin 3 (or the bonding of FIG. The structure is such that the stress generated at the adhesive interface of the film 9) and the adhesive interface of the circuit board 7 and the sealing resin 3 (or the adhesive film 9) can be reduced.

For example, a bump electrode 2 having a shape a × b × maximum bump height t formed by using Au as an electrically conductive material is provided at a position having a length L from the end of the semiconductor element 1.
Of the semiconductor element 1 in which the bump electrodes 2 are formed so that the ends of the wirings are arranged, and the material composition of the substrate wiring 4 is the elastic modulus E and the thickness h.
When the circuit board 7 on which the Cu foil is formed is pressed and heated, the board wiring 4 is easily elastically deformed while the thermoplastic adhesive 5 is removed. Since a part of the electrode 2 is plastically deformed to follow the shape of the board wiring 4, stable electrical connection can be ensured.

Further, as shown in FIG. 3, the gap between the semiconductor element 1 and the substrate wiring 4 at the end of the semiconductor element 1 is reduced to 0.2 times or less the bump height t so that the semiconductor element 1 and the sealing are sealed. It is possible to reduce the stress generated at the adhesive interface between the resin 3 (or the adhesive film 9) and the adhesive interface between the circuit board 7 and the sealing resin 3 or the adhesive film 4, and improve the connection reliability. <Embodiment 2> Next, a method of mounting the mounting structure 101 of the semiconductor device will be described with reference to the process chart of FIG.

In step 1, the circuit board 7 is formed by the following method. When a metal such as Au, Al, or Cu or an alloy using these elements is used as the substrate wiring 4, the substrate wiring 4 is formed of a metal foil or an alloy foil by using a thermoplastic adhesive 5 such as a polyester adhesive. The circuit board 7 is formed by adhering the metal foil or alloy foil on the material 6 and forming a resist mask by a well-known lithographic technique and etching.

As a method of forming the circuit board 7, for example, a metal foil or an alloy foil is attached to the base material 6 by using the thermoplastic adhesive 5 to grow a metal or alloy layer by a plating technique and then the substrate is formed. There is also a method of forming the wiring 5, and further, a method of forming a substrate wiring 5 by growing a metal or alloy layer on the thermoplastic adhesive 5 of the base material 6 by a plating technique, and any forming method can be used. Good.

In step 2, the sealing resin 3 is applied on the circuit board 7. Note that this step is shown in FIG.

In step 3, the semiconductor element 1 on which the bump electrode 2 is formed in advance is mounted on the substrate wiring 5 at a predetermined position by using the positioning mounting device 8. As described above, the bump electrode 2 is formed on the electrode pad of the semiconductor element 1 using an electrically conductive material such as Au by a plating technique or a wire bumping method. This step is shown in FIG. 4 (b).

Finally, in step 4, a high contact stress is always maintained between the bump electrode 2 and the substrate wiring 4,
The sealing resin 3 is thermoset (20 s at 180 ° C.) while the semiconductor element 1 is applied with a pressure (200 MPa), and a stable electrical connection is secured. Through the above steps, the semiconductor device mounting structure 101, which is the object of the present invention, is obtained. This process is shown in Fig. 4 (c).
Is shown in.

As described above, by using the semiconductor device mounting structure 101 of the present invention, stable electrical connection can be ensured, and a conventional high elastic modulus insulating resin layer such as epoxy resin is provided. It is possible to realize cost reduction and improvement in connection reliability as compared with the comparative example in the case of the above. <Embodiment 3> FIG.
It is sectional drawing explaining the process of the mounting method using the adhesive film which has the same function.

The mounting structure 102 of the semiconductor device shown in the sectional view of FIG. 5C is basically mounted in the same process as that of FIG. 4 of the second embodiment, but is sealed on the circuit board 7 described above. The difference is that instead of the step of applying the resin 3, a step of temporarily press-bonding an adhesive film 9 whose main component is an epoxy resin or an epoxy resin containing no conductive particles is used. That is, as shown in FIG. 5A, an adhesive film 9 is laid on the circuit board 7 instead of the sealing resin 3.

Next, as shown in FIG. 5B, the semiconductor element 1 on which the bump electrodes 2 are formed in advance is mounted on the substrate wiring 5 at a predetermined position by using the positioning mounting device 8. As described above, the bump electrode 2 is formed on the electrode pad of the semiconductor element 1 using an electrically conductive material such as Au by a plating technique or a wire bumping method.

Finally, as shown in FIG. 5C, a pressure (200 MPa) is applied to the semiconductor element 1 so that a high contact stress is always maintained between the bump electrode 2 and the substrate wiring 4. The thermosetting of the sealing resin 3 (at 180 ° C for 20s) secures the electrical connection. Through the above steps, the semiconductor device mounting structure 102, which is the object of the present invention, is obtained.

As described above, as shown in the sectional view of FIG.
The mounting structure 102 of the semiconductor device according to the present embodiment is provided with an adhesive film 9 containing an epoxy resin or an epoxy resin containing no conductive particles as a main component, and a thermoplastic adhesive 5 between the base material 6 and the board wiring 4. Using the circuit board 7 and the semiconductor element 1 having the plurality of bump electrodes 2 formed thereon, the semiconductor element 1 is mounted face down via the adhesive film 9 and is in contact with the bump electrode 2 of the semiconductor element 1 at the connection portion. The substrate wiring 4 is easily deformed while the thermoplastic adhesive 5 is removed to ensure electrical connection. At the end of the semiconductor element 1, the gap between the semiconductor element 1 and the substrate wiring 4 is set to 0. Two
The connection reliability is improved by making it twice as thin. <Fourth Embodiment> FIGS. 6 and 7 show a non-contact IC card 103.
And the mounting structure 101 or 1 of the semiconductor device of the present invention in the wireless IC modules of the wireless IC tags 104 and 105.
An example in which 02 is applied is shown.

That is, FIG. 6A shows the non-contact IC card 1
03 is a plan view, and FIG. 6 (b) is a sectional view taken along the line AA 'in FIG. 6 (a). FIG. 7A shows the wireless IC tag 104, and FIG. 7B.
Shows plan views of the wireless IC modules of the wireless IC tag 105, respectively. FIG. 7C shows BB ′ of FIG. 7A.
The cross-sectional view and FIG. 7D are cross-sectional views taken along the line BB ′ of FIG. 7B.

As shown in the figure, the mounting structure 101 of the semiconductor device of the present invention, in which the circuit board 7 is formed by using the board wiring 4 of the circuit board 7 as an antenna coil and the substrate 6 as a film-like flexible lower cover sheet, Alternatively, 102 and a film-shaped flexible upper cover sheet 11 made of the same material as the lower cover sheet are bonded by using a hot melt agent 10. As described above, since the wireless IC module has the configuration using the mounting structure of the semiconductor device of the present invention, stable electrical connection can be ensured, and cost reduction and improvement of connection reliability are realized. can do. <Example 5> In Examples 3 to 4, the adhesive film 9 containing epoxy resin as a main component and having a thickness of 30 [mu] m and containing no conductive particles is temporarily pressure-bonded to the circuit board 7. For the circuit board 7, the base material 6 is a PET film with a thickness of 50 μm, the board wiring 4 has an elastic modulus of 115 GPa, a Cu wiring with a thickness of 9 μm, and a polyester-based thermoplastic as an adhesive for bonding the board wiring 4 and the base material 6. The adhesive 5 is used.

Next, 50 μm × 50 μm × height 1 formed on the electrode pad of the semiconductor element 1 by the electroplating technique.
In order to secure the electrical connection between the 5 μm thick Au bump electrode 2 and the Cu wiring 4 on the circuit board 7, they were connected under a curing condition of 180 ° C. for 20 s.

Here, by applying a pressure of 200 MPa per unit area of the tip area of the bump as the pressing force, the substrate wiring 4 which contacts the bump electrode 2 of the semiconductor element 1 at the connection portion.
Was easily deformed while removing the thermoplastic adhesive 5, and the gap between the semiconductor element 1 and the substrate wiring 4 was thinned to about 2 to 3 μm at the end of the semiconductor element 1 to 0.2 times or less the bump height. .

The connection resistance value was measured by applying a constant current of 10 mA and calculating the connection resistance value from the total measured voltage value of the bump electrode and the contact connection by the 4-terminal method. As a result, 85
It was confirmed that the connection resistance value was stable at less than 100 mΩ even after 100 hours of the high temperature and high humidity test at 85 ° C. and 85% RH.

[0044]

As described above, according to the present invention, stable electrical connection can be secured, and contact connection is secured when a high elastic modulus insulating resin layer is provided on a circuit board or through conductive particles. As compared with the case where the cost is reduced, the cost can be reduced and the connection reliability can be improved.

[Brief description of drawings]

FIG. 1 is a sectional view of a mounting structure according to an embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view of a bump structure of a mounting structure according to an embodiment of the present invention, taken along a metallurgical micrograph.

FIG. 3 is a characteristic curve diagram for explaining details of the embodiment of the present invention, and is a diagram showing a relationship between a gap between substrate wirings and a connection failure rate at an end portion of a semiconductor element in consideration of bump height.

FIG. 4 is a cross-sectional view showing a mounting process according to an embodiment of the present invention.

FIG. 5 is a sectional view showing a mounting process according to another embodiment of the present invention.

FIG. 6 illustrates a mounting structure according to an embodiment of the present invention in which a contactless IC
Explanatory drawing applied to a card.

FIG. 7 is an explanatory diagram in which a mounting structure according to an embodiment of the present invention is applied to a wireless IC tag.

FIG. 8 is a cross-sectional view of a conventional mounting structure.

[Explanation of symbols]

1 ... Semiconductor element, 2 ... bump electrodes, 3 ... Sealing resin, 4 ... Thermoplastic adhesive, 5 ... Board wiring, 6 ... Base material 7 ... circuit board, 8 ... Positioning device 9 ... Adhesive film, 10 ... Hot melt agent, 11 ... Upper cover sheet, 12 ... Insulating film, 101, 102 ... Semiconductor device mounting structure, 103 ... Non-contact IC card, 104, 105 ... Wireless IC tags.

Claims (6)

[Claims] 1. An insulative sealing resin containing an epoxy resin as a main component, a circuit board provided with a thermoplastic adhesive between a base material and board wiring, and a semiconductor element having a plurality of bump electrodes formed thereon.
A mounting structure of a semiconductor device, comprising a connecting portion electrically connected to the substrate wiring face down with the semiconductor element via the insulating sealing resin, wherein the connecting portion has bump electrodes of the semiconductor element. A semiconductor device characterized in that the substrate wiring contacting the substrate is largely deformed while eliminating the thermoplastic adhesive, and the gap between the semiconductor element and the substrate wiring is thinned to 0.2 times or less of the bump height at the end of the semiconductor element. Implementation structure of. 2. An insulating adhesive film containing an epoxy resin as a main component, a circuit board provided with a thermoplastic adhesive between a base material and substrate wiring, a semiconductor element having a plurality of bump electrodes formed thereon, and the semiconductor. A mounting structure of a semiconductor device having a connection part electrically connected to the substrate wiring face down through the insulating adhesive film, wherein the connection part is in contact with a bump electrode of the semiconductor element. Mounting structure of a semiconductor device characterized in that the board wiring is largely deformed while removing the thermoplastic adhesive, and the gap between the semiconductor element and the board wiring is thinned to 0.2 times or less of the bump height at the end of the semiconductor element. body. 3. An insulating encapsulating resin containing an epoxy resin as a main component, a circuit board provided with a thermoplastic adhesive between a base material and board wiring, and a semiconductor element having a plurality of bump electrodes formed thereon.
The semiconductor element has a connecting portion electrically connected to the substrate wiring face down with the insulating sealing resin interposed therebetween, and the connecting portion includes a substrate wiring contacting a bump electrode of the semiconductor element. A method of mounting a semiconductor device, wherein a large deformation is performed while eliminating a thermoplastic adhesive, and a gap between a semiconductor element and a substrate wiring is thinned to 0.2 times or less of a bump height at an end of the semiconductor element, the bump electrode and Before connecting the board wiring, the sealing resin is pre-supplied to the circuit board on the area where the semiconductor element is mounted, and the board wiring contacting the bump electrodes is largely deformed while removing the thermoplastic adhesive. After that, the semiconductor device mounting method is characterized in that the sealing resin is cured. 4. An insulating adhesive film containing an epoxy resin as a main component, a circuit board provided with a thermoplastic adhesive between a base material and board wiring, a semiconductor element having a plurality of bump electrodes formed thereon, and the semiconductor. The device has a connecting portion electrically connected to the substrate wiring facedown through the insulating adhesive film, and the substrate wiring contacting the bump electrode of the semiconductor element is thermoplastically bonded at the connecting portion. A method for mounting a semiconductor device, wherein a bump between a semiconductor element and a board wiring is thinned to 0.2 times or less of a bump height at an end of the semiconductor element while largely deforming while removing an agent. Before the connection of the semiconductor element, the insulating adhesive film is temporarily pressure-bonded to the circuit board on the area where the semiconductor element is mounted, and the board wiring that contacts the bump electrode is large while eliminating the thermoplastic adhesive. After Ku deformed, mounting method of a semiconductor device, characterized in that curing the adhesive film. 5. The base material of the circuit board in the semiconductor device mounting structure according to claim 1 or 2 serves as a lower cover sheet, and the board wiring of the circuit board serves as an antenna for wireless communication. Wireless IC module. 6. The wireless I according to claim 6, wherein the semiconductor device mounting structure according to claim 1 and the upper cover sheet are bonded to each other by using a hot melt agent.
C module.