JP2003031506A - Apparatus and method for forming semiconductor thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a semiconductor thin film where unstable factors for thin film growth, due to variations of the temperature associated with the surface state of a wafer are removed and various film-forming techniques are realized. SOLUTION: The apparatus for forming a semiconductor thin film is characterized by comprising a film forming container 1, a holding means 11 for holding a film-forming wafer 2 having front side 7 and a rear side 8, a first heating source 5 provided at the position opposite to the front side 7 of the film-forming substrate 2, a second heating source 6 provided at the position opposite to the rear side 8 of the film forming wafer 2, a first thermal equalization plate 3 having an area larger than that of the film-forming wafer 2 provided between the first heating source 5 and the film-forming wafer 2, and a second thermal equalization plate 4 having an area larger than that of the film-forming wafer 2 provided between the second heating source 6 and the film-forming substrate 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film forming apparatus and a semiconductor thin film forming method.

[0002]

2. Description of the Related Art A semiconductor integrated circuit is manufactured by a combination of various processes such as a process of forming an oxide film on a semiconductor substrate, a process of introducing impurities, a photolithography process and a process of forming electrodes.

In addition to these steps, in recent years, attention has been paid to an epitaxy step in which crystals of semiconductor thin films having different properties are laminated on the surface of a semiconductor substrate. Among them, the heteroepitaxy technique of laminating a crystal of a silicon germanium (SiGe) thin film on the surface of a silicon substrate can be expected to be applied to a new semiconductor element, and research is being actively conducted.

A film forming apparatus for growing crystals of a semiconductor thin film is
The surface of the film-forming substrate is provided with a film-forming container that can be evacuated to a vacuum or reduced pressure, a heating source that heats the film-forming substrate installed in the film-forming container, and a gas introduction unit that introduces a raw material gas. It has a function of decomposing the raw material gas and forming a desired semiconductor thin film.

There are roughly two types of concrete film forming apparatuses.

The first is a film forming apparatus called a batch type furnace,
This is an apparatus in which a plurality of semiconductor substrates for film formation are installed in a film formation tube made of long quartz, a heater is wound so as to surround the outside of the film formation tube, and a source gas is introduced into the film formation tube.

With this film forming apparatus, the temperature inside the film forming tube can be maintained with good uniformity, and there is no factor of temperature fluctuation. However, when the diameter of the semiconductor substrate for film formation becomes large and the number of semiconductor substrates for film formation increases, the film forming tube becomes large and the size of the heater surrounding it becomes large / large in capacity. Therefore, it becomes difficult to control the reaction by substantially changing the growth temperature.

Further, since the heat capacity in the film forming tube is large and it is difficult to change the temperature, there is a problem that the temperature cannot be controlled well when it is desired to change the temperature from a high temperature to a low temperature. Therefore, from the mode in which the source gas is decomposed at a high temperature and the semiconductor thin film is formed over the entire surface of the film formation semiconductor substrate, the decomposition reaction of the source gas is performed only on the film formation semiconductor substrate at a low temperature. Does not grow on the surface of a substance with low reactivity,
There is a problem that it is difficult to switch to a selective growth mode utilizing the difference in decomposition efficiency of growing on a highly reactive substance surface such as a semiconductor layer surface.

Secondly, there is a film forming apparatus called a single-wafer furnace. In a single-wafer furnace, one film-forming semiconductor substrate is installed in the film-forming container, and a heater such as the same is also installed inside the film-forming container or outside the film-forming container with a window such as a quartz plate. It is an apparatus for introducing a raw material gas into the film forming container while heating the film forming semiconductor substrate using the above lamp heater.

Since this film forming apparatus can use a film forming container which is relatively small compared to a batch type furnace, the heat capacity of the heating heater can be reduced, so that the reaction temperature can be easily controlled during the process. There is a feature called.

Therefore, from the mode in which the source gas is decomposed at a high temperature to form the semiconductor thin film over the front surface of the film forming semiconductor substrate, the decomposition reaction of the source gas is performed only on the film forming semiconductor substrate at a low temperature. The feature is that it is easy to switch to the selective growth mode using the difference.

However, in this single-wafer furnace, the balance of absorption / release of heat from the heat source fluctuates due to the non-uniformity of the surface state of the film-forming semiconductor substrate, and the temperature fluctuates during the film-forming process. There is a problem that it is easy.

[0013]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and eliminates the instability factor of thin film growth due to temperature fluctuations due to the surface condition of the film formation substrate, and forms a film. An object of the present invention is to provide a semiconductor thin film forming apparatus and a semiconductor thin film forming method capable of variably changing the substrate temperature.

[0014]

In order to solve the above-mentioned object, the present invention provides a film forming container, and a holding means which is provided in the film forming container and holds a film forming substrate having a front surface and a back surface. A first heating source provided at a position facing the front surface of the film-forming substrate, a second heating source provided at a position facing the back surface of the film-forming substrate, and the first heating source. A first heat equalizing plate that is provided between a heat source and the film forming substrate and has an area larger than that of the film forming substrate; and a second heat source that is provided between the second heat source and the film forming substrate. A film forming apparatus for a semiconductor thin film, comprising: a second heat equalizing plate having an area larger than the area of the substrate for use.

At this time, there is provided a driving means for arbitrarily adjusting the distance (L) between the surface of the film forming substrate and the first heat equalizing plate, and the source gas introduced into the film forming container. It is preferable that the state where λ> L and the state where λ <L can be varied with respect to the mean free path (λ).

The pressure control means controls the pressure of the raw material gas introduced into the film forming container, and the mean free path (λ) of the raw material gas introduced into the film forming container is
It is preferable that the state of λ> L and the state of λ <L can be changed with respect to the distance (L) between the surface of the film formation substrate and the first heat equalizing plate.

Further, according to the present invention, a step of placing a film-forming substrate between the heat equalizing plates arranged in the film-forming container so as to face each other, a step of introducing a raw material gas into the film-forming container, and the raw material Mean free path λ of gas> a state where the distance L between the film forming substrate and the heat equalizing plate is satisfied, and mean free path λ of the source gas <distance L between the film forming substrate and the heat equalizing plate There is provided a method for forming a semiconductor thin film, which comprises a step of switching states.

According to the present invention, by providing heat equalizing plates capable of radiating heat evenly on both front and back sides of the film-forming substrate, even if the growth surface of the film-forming substrate is uneven, it can be made uniform. It is possible to give a heat distribution.

Further, heat equalizing plates are installed on both front and back sides of the film forming substrate, and a distance L between the surface of the film forming substrate and the heat equalizing plates installed on the surface side and the source gas in the film forming container are set. By freely setting the relationship with the mean free path λ, various growth modes can be realized with a single film forming container.

The relationship between the distance L between the surface of the film-forming substrate and the soaking plate installed on the surface side and the mean free path λ of the raw material molecules in the film-forming container is such that L> λ, especially L >> λ. At this time, the raw material gas collides many times between the soaking plate and the surface of the film formation substrate, so that the temperature of the raw material gas rises and a decomposition reaction occurs in the gas phase. Therefore, a semiconductor thin film can be formed even in a portion having a low reactivity such as an oxide film.

On the other hand, when L <λ, particularly when L << λ, the raw material gas does not react in the gas phase and decomposes only on the surface of the film-forming substrate, so that the reactivity of the oxide film is low. It is possible to realize selective growth depending on the surface state such that it does not grow on the surface and grows on a highly reactive portion such as a semiconductor surface.

Here, although the distance between the front surface of the substrate and the heat equalizing plate has been mainly discussed, there is no great restriction on the distance between the back surface of the substrate and the heat equalizing plate. However, it is desirable that the back surface of the substrate is not in contact with the heat equalizing plate. By placing the substrate without contact between the two heat equalizing plates, the substrate is heated by radiation from the heat equalizing plate or convection of the source gas. At this time, it is as if the substrate was placed in a thermally stable furnace, and the substrate is stable regardless of the state of its front surface (or back surface). On the other hand, when the back surface of the substrate is in contact with the heat equalizing plate, heat is transferred from the heat equalizing plate by heat conduction.
In this case, the conduction may differ depending on the state of the back surface of the substrate (for example, the presence or absence of an oxide film), or the balance change of heat radiation due to the change of the surface state may cause a temperature change.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is not limited to the following embodiments, and various modifications can be used.

FIG. 1 is a schematic view of a semiconductor thin film forming apparatus according to the first embodiment of the present invention.

This film forming apparatus comprises a film forming container 1, a first heat equalizing plate 3 and a second heat equalizing plate 4 which are arranged in the film forming container 1 so as to sandwich a film forming substrate 2 therebetween. It is equipped with. The first heat equalizing plate 3 is provided at a position facing the surface 7 of the film formation substrate 2. The second heat equalizing plate 4 is provided at a position facing the back surface 8 of the film formation substrate 2. The film formation substrate 2 is
It is fixed to a substrate stage 11 which is a substrate holding means, and is arranged with the front surface 7 facing downward and the back surface 8 facing upward.

A lamp heater 5 as a first heat source is provided outside the film forming container 1, and the first soaking plate 3 can be heated through a quartz window 9 installed in the film forming container 1. There is. Further, a lamp heater 6 as a second heat source is provided outside the film forming container 1, and the second heat equalizing plate 4 can be heated through a quartz window 10 installed in the film forming container 1. .

The first soaking plate 3 and the second soaking plate 4 are made of graphite. Material of soaking plate 4 is SiC, B
It may be a high thermal conductivity ceramic of N, Al ₂ O ₃ or a Si substrate. The film formation substrate 2 includes a lamp heater 5,
The first soaking plate 3 and the second soaking plate 4 are heated by 6 to be uniformly heated. At this time, both the first soaking plate 3 and the second soaking plate 4 have an area larger than that of the film-forming substrate 2, and the peripheral edge of the film-forming substrate 2 has the first and second soaking plates. It is desirable that the plates 3 and 4 are covered so that they do not protrude. By doing so, uniform heat can be supplied over the entire surface of the film formation substrate 2.

The temperature of the film forming substrate 2 is controlled by the first soaking plate 3
Also, the temperature of the second soaking plate 4 is measured and controlled by controlling this temperature. For example, thermocouples are installed on the first soaking plate 3 and the second soaking plate 4, and the first lamp heater 5 and the second lamp heater 6 are provided so that the temperature of the soaking plate becomes stable.
It may be performed by controlling the output of.

The first soaking plate 3 is installed in the driving device 14 and is movable in the vertical direction. This drive 1
The distance L between the surface 7 of the film-forming substrate 2 and the first heat equalizing plate 3 can be adjusted by setting the number 4.

An exhaust system 12 is connected to the film forming container 1. The exhaust system 12 has a system in which a dry pump and a turbo molecular pump are combined, and the ultimate vacuum when the source gas is not introduced is 1 × 10 ⁻⁷ Pa.

A supply system 13 is connected to the film forming container 1. The supply system 13 has a means for switching various gases such as a raw material gas or a carrier gas and a means for adjusting the flow rate, so that the type and flow rate of the gas introduced into the film forming container 1 can be controlled.

With these configurations, the semiconductor thin film forming apparatus according to the present embodiment has the film forming substrate 2 for forming a thin film.
The average freeness of the source gas introduced into the film forming container 1 can be adjusted by arbitrarily adjusting the distance (L) between the surface 7 of the film and the first heat equalizing plate 3 in the direction shown by the arrow A in FIG. It is possible to change the state of λ> L and the state of λ <L with respect to the stroke (λ).

For example, when growing a silicon thin film, the raw material partial pressure in the film forming container 1 when the disilane gas is introduced from the supply system 13 at 100 sccm is 500 mPa. The mean free path of the raw material gas at this time is estimated to be about 1 cm (for simplicity, it was estimated in terms of nitrogen molecules).

In the film forming apparatus of this embodiment, the distance L between the first soaking plate 3 and the surface 7 of the film forming substrate 2 is 0.5 cm.
It is possible to change from 1 to 50 cm.

When the distance L between the first heat equalizing plate 3 and the surface 7 of the film-forming substrate 2 is set to be smaller than 1 cm under the condition of the raw material partial pressure of disilane gas of 500 mPa, the distance is set to that of the raw material gas. It becomes smaller than the mean free path, and the source gas between the first soaking plate 3 and the surface 7 of the film formation substrate 2 is
It is expected that the gases will hardly collide. As a result, the undecomposed raw material gas is likely to reach the surface 7 of the film-forming substrate 2, and the decomposition reaction of the raw material gas strongly depends on the state of the surface 7 of the film-forming substrate 2. It is possible to realize selective growth in which a semiconductor thin film is not grown on an oxide film pattern having a low temperature, but a semiconductor thin film is grown only on a highly reactive semiconductor single crystal surface.

On the other hand, when the distance L between the first soaking plate 3 and the surface 7 of the film-forming substrate 2 is set to 50 cm, the mean free path of the source gas is 50 times, and the source gas is the first soaking plate. It is expected that the gases 3 repeatedly collide with each other between the film 3 and the surface 7 of the film formation substrate 2 and decompose in the gas phase.

Since the adherence of the decomposed and activated source gas is high irrespective of the state of the surface 7 of the film-forming substrate 2, a uniform silicon layer can be formed even if a part of the source gas is covered with an oxide film. It becomes possible to deposit.

As described above, the semiconductor thin film forming apparatus according to the present embodiment can freely control the thin film growth in different modes.

Here, the distance between the back surface 8 of the film formation substrate 2 and the second heat equalizing plate 4 was fixed at 2 cm. Further, in the semiconductor thin film forming apparatus according to the present embodiment, since the temperature of the region sandwiched by the two heat equalizing plates 3 and 4 becomes uniform, the film formation in which the surface state as patterned by the oxide film is not uniform. It is possible to keep the substrate temperature constant also in the substrate 2 for use. At this time, even in a substrate in which the semiconductor thin film is further deposited and the nonuniformity is further increased, the substrate surface temperature is kept uniform and is unlikely to change.

FIG. 2 is a schematic view of a semiconductor thin film forming apparatus according to the second embodiment of the present invention.

In the semiconductor thin film forming apparatus shown in this embodiment, the structure of the film forming container 1 is almost the same as that of the first embodiment. However, the first soaking plate 3 and the surface 7 of the film formation substrate 2
The distance L from and is fixed at 2 cm. Further, the distance between the back surface 8 of the film formation substrate 2 and the second heat equalizing plate 4 was also fixed to 2 cm. A heater is wound as the first heat source 5 and the second heat source 6.

As the supply system 13 for introducing the raw material gas into the film forming container 1, a manifold having a plurality of introduction ports was prepared. Here, two ports for introducing disilane gas are prepared for forming a silicon thin film. A mass flow controller with a maximum flow rate of 20 sccm is installed in one port 15 and the same flow rate is used in the other port 16.
A mass flow controller of 00 sccm was installed.
The port 17 is a mass flow controller capable of introducing hydrogen at a maximum flow rate of 50 sccm. The port 18 is a mass flow controller capable of introducing a maximum flow rate of 2000 sccm.

As a result, the flow rate of disilane introduced into the film forming container 1 can be controlled within the range of 0.5 sccm to 500 sccm. Normally, the mass flow controller that controls the flow of gas deteriorates in controllability at about 2% or less of the maximum flow rate, and accurate control cannot be performed.

On the other hand, the film forming apparatus of this embodiment uses a method of controlling the large flow rate control and the small flow rate control by dividing them into two control formations. As a result, the gas partial pressure in the film forming container 1 was 2 mPa to 1.7 Pa with disilane gas,
It becomes possible to change from 3 mPa to 6.7 Pa with hydrogen gas.

The corresponding mean free path of the source gas in the case of hydrogen is about 220 cm to 0.1 cm.
It is possible to change up to. (Here, the exhaust capacity for the reaction vessel is set to 500 liters / second, and the molecular diameter of nitrogen molecule is assumed to derive the mean free path.
a], the mean free path λ for the gas is λ = 0.67 /
a [cm]).

Furthermore, a large amount of hydrogen gas (carrier gas)
When disilane gas (raw material gas) is present in the medium, the raw material gas frequently collides with the carrier gas, so that the mean free path of the raw material gas can be approximated by the mean free path of the carrier gas. That is, it is possible to control the mean free path of the raw material gas by fixing the introduction amount of the raw material gas and changing the introduction amount of the carrier gas.

As a result, in the film forming apparatus of this embodiment, the distance L (2c) between the first heat equalizing plate 3 and the surface 7 of the film forming substrate 2 is set.
For m), the mean free path of the source gas is set between the first heat equalizing plate 3 and the film formation substrate 2 from a state in which the gases repeatedly collide with each other to a state in which the gas hardly collides 3 It is possible to control in the range of digits or more.

As a result, the source gas in the film forming container 1 is
In a mode in which raw material decomposition progresses through repeated collisions in the gas phase, the decomposed raw material gas reaches the substrate surface and contributes to growth, and raw material decomposition in the gas phase hardly occurs, and undecomposed raw material gas is used for film formation. It is possible to freely control the mode in which the thin film reaches the surface 7 of the substrate 2 and undergoes a decomposition reaction on the surface to promote thin film growth.

As a method of controlling the partial pressure of the raw material in the film forming container 1 or the partial pressure of the carrier gas, there is a method of changing the capacity of the exhaust system 12.

FIG. 3 is a schematic view of a semiconductor thin film forming apparatus according to a third embodiment of the present invention, which is capable of changing the capacity of the exhaust system 12.

In the film apparatus according to the second embodiment, the exhaust capacity is fixed at 500 liters / second, but by making this variable, the partial pressure of the raw material in the film forming container 1 can be controlled. It is possible. In the film forming apparatus according to this embodiment, the exhaust system 12 of the second embodiment has the following configuration.

That is, in the exhaust system 12, a variable valve 19 is installed at the inlet of the exhaust system 12 so that the flow rate of gas flowing through the exhaust port can be controlled.

Further, the system for exhausting by the turbo pump 20 and the system for exhausting by the dry pump 21 can be provided in parallel and switched as needed.

Excess gas from the supply system 13 is exhausted by the exhaust device 22.

An exhaust system 12 capable of adjusting such an exhaust amount
As a result, the pressure P [Pa] in the film forming container 1 when a gas having a flow rate Q [Pa · m ³ / s] is introduced into the film forming container 1 that is evacuated with the exhaust capacity S [m ² / s] Can be represented by the following formula.

P = Q / S (1) Here, using the turbo pump 20 and the dry pump 21 as the exhaust capacity S and the variable throttle valve 19 and the like. Can be changed with.

Further, a method of switching these exhaust systems,
Combining with the method of controlling the flow rates of the source gas and the carrier gas is also an effective means for controlling the source gas partial pressure in the film forming container 1 and the mean free path λ in a wide range width.

Next, with reference to FIGS. 4 and 5, a method of growing a Si-based thin film crystal using the semiconductor thin film forming apparatus shown in the second embodiment will be described.

FIG. 4 shows a laminated structure of a hetero bipolar transistor.

As shown in FIG. 4, the silicon substrate 22 is
An n-type Si layer serving as a collector is prepared. n type S
A non-doped SiGe spacer layer 2 is formed on the i layer 22.
3 is formed. A silicon oxide film 24 is formed on the n-type Si layer 22 so as to sandwich the non-doped SiGe spacer layer 23. On the non-doped SiGe spacer layer 23 and the silicon oxide film 24, p-type SiGe is formed.
The base layer 25 is formed. An n-type Si emitter layer 26 is formed on the p-type SiGe base layer 25. A silicon oxide film 27 is inserted between the p-type SiGe base layer 25 and the p-type SiGe emitter layer 26 located on the silicon oxide film 24.

The p-type SiGe base layer 25 has an external base portion for forming an electrode (not shown) formed on the oxide film.

Such a semiconductor device is manufactured using the semiconductor thin film forming apparatus shown in the second embodiment.

However, in addition to the disilane and hydrogen as shown in FIG. 2, a germanium gas and a diborane gas introduction system as a raw material for the added impurities are also added to the raw material gas introduction system. As with disilane gas, the maximum flow rate of germanium gas is 20 sccm and 500 sc
A cm mass flow controller is installed.

Maximum flow rate of 20 s in the diborane gas introduction system
A ccm mass flow controller is installed.

In the film-forming semiconductor substrate 22 shown in FIG. 5, an opening 28 is formed in the silicon oxide film 24 layer so as to define the intrinsic base above the n-type collector portion.

First, a non-doped SiGe layer to be the spacer layer 23 shown in FIG. 4 is grown on the film forming semiconductor substrate 22. At this time, the growth is performed under the selective growth condition so that the SiGe layer grows only in the opening 28. The flow rate of the raw material gas at this time was 6 sccm of disilane gas and 1 germanium gas.
0 sccm and 10 sccm of hydrogen are introduced. In this state, the pressure of the film forming container 1 is about 100 mPa and the mean free path is about 5 cm, which is larger than the distance between the surface of the film forming substrate 22 and the first heat equalizing plate.

Under this condition, the temperature of the film forming substrate 22 is set to 600.
When the temperature is maintained at 0 ° C. and exposed to the raw material gas atmosphere for about 3 minutes, a SiGe crystal layer having a thickness of 10 nm and a Ge composition of 15% selectively grows in the opening 28.

At this time, the raw material molecules are hardly decomposed in the gas phase, and decomposition reaction occurs only on the substrate surface. Therefore, it becomes extremely sensitive to the reactivity of the surface of the film formation substrate 22, thin film growth does not occur in the portion covered with the silicon oxide film 24, and the growth proceeds only in the opening 28 where the Si crystal layer is exposed. It becomes the mode of selective growth. As a result, a layer of non _- doped Si _1-x Gex (X = 0.1) having a thickness of 10 nm is formed only in the intrinsic base region portion.

Subsequently, the flow rate condition of the source gas is changed to continue the growth. The flow rate of each gas at this time is 50 sccm of disilane gas, 75 sccm of germane gas, 2 sccm of diborane gas, and 200 sccm of hydrogen gas. Under this condition, the mean free path λ of the source gas can be approximated by the mean free path of hydrogen molecules having the highest partial pressure. The total pressure of the reaction vessel is increased by one digit or more from the above conditions, and the mean free path is about 4 mm.

As a result, the first soaking plate and the film forming substrate 22 are formed.
The raw material gas and the hydrogen gas repeatedly collide with each other between the surfaces of, the temperature of the vapor phase rises, and the raw material decomposition in the vapor phase begins. Since the raw material decomposed in the vapor phase is easily deposited even on the surface having low reactivity, it is possible to grow a uniform SiGe layer without depending on the surface state of the film formation substrate 22.

Therefore, under this condition, the low resistance SiGe layer 25 (FIG. 4) to which the book theory is added at a high concentration can be uniformly formed, including on the silicon oxide film 24 which defines the intrinsic base portion. The low-resistance polycrystalline SiGe layer 25 (FIG. 4) formed on the silicon oxide film 24 can be used as an external base region in the extraction electrode introduction part.

In the above example, the selective growth and the buried growth are switched by controlling the partial pressure of the raw material. However, the first method for adjusting the distance between the surface of the film formation substrate 22 and the first soaking plate is used. Also by the semiconductor thin film deposition apparatus shown in the embodiment,
It is also possible to form the growth mode by freely changing it.

The present invention has been described above with reference to an example of forming a silicon thin film on a silicon substrate. However, in addition to the silicon thin film, a silicon-germanium mixed crystal containing a part of germanium, or silicon / germanium / It goes without saying that it is also effective for growing a thin film such as a carbon mixed crystal.

Further, in the conventional single-wafer thin film growth apparatus,
In addition to the substrate on which the silicon crystal is exposed, the growth may be performed on a substrate partially or on the front surface covered with an oxide film or a nitride film, or a substrate having an embedded layer such as a silicon oxide film inside the substrate (SOI substrate). As the surface condition changes with progress and the heat absorption rate and emission rate of the infrared lamp change,
The surface temperature fluctuated, and a phenomenon in which a growth parameter such as a growth rate changed during the growth sometimes occurred.However, in the structure in which both surfaces of the substrate are surrounded by a soaking plate as in the film forming apparatus of the present invention, The substrate temperature is always stable and good controllability is obtained.

[0075]

According to the present invention, in the single-wafer-type semiconductor epitaxy apparatus, the instability factor of thin film growth caused by the temperature fluctuation due to the surface condition of the substrate is removed, and the characteristics of the patterned substrate surface are utilized. It is possible to realize a reaction path that realizes selective growth and various film forming techniques.

[Brief description of drawings]

FIG. 1 is a schematic view of a semiconductor thin film growth apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic view of a semiconductor thin film growth apparatus according to a second embodiment of the present invention.

FIG. 3 is a schematic view of a semiconductor thin film growth apparatus according to a second embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor device manufactured by the method for growing a semiconductor thin film of the present invention.

FIG. 5 is a cross-sectional view of a film-forming semiconductor substrate formed by the method for growing a semiconductor thin film of the present invention.

[Explanation of symbols]

1 ... Film forming device 2 ... Substrate for film formation 3 ... The first soaking plate 4 ... Second soaking plate 5: First lamp heater 6 ... Second lamp heater 7 ... Surface of substrate for film formation 8 ... Back side of substrate for film formation 9 ... Quartz glass 10 ... Quartz glass 12 ... Exhaust system 13 ... Supply system 14 ... Driving means 15, 16, 17, 18 ... Supply port 19: Variable throttle valve 19 20 ... Turbo pump 21 ... Dry pump 22 ... Exhaust device

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shinichi Takagi             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center F-term (reference) 4K030 CA04 CA12 EA06 JA03 JA09                       KA24 KA41                 5F045 AA07 AB01 AC01 AD10 AE13                       AF03 BB12 DP04 EB02 EE04                       EE17 EG03 EK11 EK24

Claims (4)

[Claims] 1. A film forming container, a holding means provided in the film forming container for holding a film forming substrate having a front surface and a back surface, and a position facing the front surface of the film forming substrate. First
And a second heat source provided at a position facing the back surface of the film formation substrate.
Heating source, a first soaking plate provided between the first heating source and the film-forming substrate and having an area larger than the area of the film-forming substrate, the second heating source, and the film formation. A film forming apparatus for a semiconductor thin film, comprising: a second soaking plate which is provided between the substrates for use and has an area larger than the area of the film forming substrate. 2. A driving means for arbitrarily adjusting a distance (L) between the surface of the film forming substrate and the first heat equalizing plate, wherein the source gas introduced into the film forming container 2. The semiconductor thin film forming apparatus according to claim 1, wherein a state where λ> L and a state where λ <L can be varied with respect to the mean free path (λ). 3. A pressure control means for controlling the pressure of the raw material gas introduced into the film forming container, wherein the mean free path (λ) of the raw material gas introduced into the film forming container is defined as 2. The state of λ> L and the state of λ <L can be changed with respect to the distance (L) between the surface of the film formation substrate and the first heat equalizing plate. Semiconductor thin film deposition system. 4. A soaking plate disposed opposite to each other in the film forming container,
A step of installing a film-forming substrate, a step of introducing a raw material gas into the film-forming container, a state in which a mean free path λ of the raw material gas> a distance L between the film-forming substrate and the heat equalizing plate And a step of switching a state in which the average free path λ of the source gas <the distance L between the film forming substrate and the heat equalizing plate is switched.