JP2003031457A - Hot plate unit for semiconductor producing/inspecting system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a hot plate unit for a semiconductor producing/increasing system in which a conductor circuit can be formed, as set, on a semiconductor wafer in the production/inspection process of the semiconductor by heating an object e.g. a resin film for forming resist, applied to the semiconductor wafer uniformly. SOLUTION: The hot plate unit for a semiconductor producing/inspecting system comprises a heater, and an objecting is heated by means of the heater disposed above.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is mainly used as an apparatus for manufacturing a semiconductor, for example, heating a resist resin film made of a photosensitive resin coated on a semiconductor wafer,
The present invention relates to a hot plate unit for semiconductor manufacturing / inspection equipment used for applications such as drying.

[0002]

2. Description of the Related Art A semiconductor product is manufactured by forming a conductor circuit having a predetermined shape on a semiconductor wafer. When forming this conductor circuit, a liquid photosensitive resin containing a solvent is applied to form a resin film and dried, and then,
A mask having a predetermined pattern of openings is placed on the resin film and exposed to ultraviolet rays. After that, the resin film is heated and cured to form a resist film, and then etching or the like is performed to remove a part of the resist film, and the resist film is formed by a method such as sputtering. A metal layer is formed on a portion which is not formed (hereinafter also referred to as a resist non-forming portion), and the resist film is peeled off to form a conductor circuit having a predetermined shape.

The photosensitive resin used at this time is applied to the surface of the semiconductor wafer by using a spin coater or the like. When the resin film after application is dried and cured, the resin film is formed. The semiconductor wafer is placed on the heater and heated.

Conventionally, as a metal heater used for such an application, a heater using a metal base material such as stainless steel or aluminum alloy has been used. However, the heater made of metal has poor temperature control characteristics and has a problem that it is heavy and bulky because the thickness becomes thicker.
There is a problem that the corrosion resistance to corrosive gas is also poor.

On the other hand, Japanese Unexamined Patent Publication No. 11-40330 discloses a heater that uses a ceramic such as aluminum nitride instead of a metal one. Since such a ceramic heater has high thermal conductivity and high mechanical strength, it is possible to reduce the heat capacity by reducing the thickness of the ceramic substrate. Therefore, there is an advantage that the temperature of the heater can be raised and lowered quickly and the temperature of the heating surface can be made uniform as compared with the conventional case.

Therefore, recently, using such a ceramic heater, a semiconductor wafer coated with a photosensitive resin is placed and heated on the heater. When heating is performed using a ceramic heater, a so-called support pin is usually provided in a state of slightly protruding from the surface of the ceramic substrate, and the semiconductor wafer is supported and heated by the support pin.

[0007]

However, when the resin film formed on the semiconductor wafer is heated from below by using such a ceramic heater, the semiconductor wafer exists under the resin film, and Since there is an air layer between the semiconductor wafer and the ceramic substrate, heat is not evenly transferred to the resin film due to such inclusions, so that the temperature of the resin film becomes non-uniform and the formed resist film. The cured state of is not uniform.

Therefore, when the formed resist film is exposed and etched through the above-mentioned mask, the shape of the resist non-formation portion varies due to the difference in the curing state depending on the location of the resist film. As a result, the pattern of the formed metal layer, that is, the pattern of the conductor circuit is different from the setting, which makes it difficult to form the conductor circuit as set.

[0009]

Therefore, as a result of research conducted by the present inventors, a ceramic heater is provided above a resin film formed on the surface of a semiconductor wafer, and the resin film is directly heated from above, thereby facilitating easy operation. It was found that the resin film can be heated at a uniform temperature.

Further, when the resin film is dried, the solvent or the like contained in the resin film is vaporized, and an organic gas is generated around the semiconductor wafer, so that the concentration of such gas becomes high. There was a case where the quickness of the resin film impeded the drying.

Therefore, the present inventors have made further studies,
When the resin film is dried using the hot plate unit, it is found that by supplying the atmospheric gas or exhausting the internal gas through the porous plate, it is possible to realize rapid and suitable drying of the resin film, The present invention has been completed.

That is, the hot plate unit for a semiconductor manufacturing / inspecting apparatus of the first aspect of the present invention is a hot plate unit for a semiconductor manufacturing / inspecting apparatus including a heater, and an object to be heated is arranged above. It is characterized by heating with a heater.

The second hot plate unit for semiconductor manufacturing / inspecting apparatus of the present invention is a hot plate unit for semiconductor manufacturing / inspecting apparatus including a heater and a ceramic plate. It is characterized in that the surface used for heating the object to be heated is arranged so as to face the ceramic plate, and the object to be heated is heated by the heater arranged above.

A hot plate unit for a semiconductor manufacturing / inspecting apparatus according to the first aspect of the present invention and the second aspect of the present invention (hereinafter referred to as
According to the "hot plate unit"), since the heater is provided above the resist resin film formed on the semiconductor wafer and the resin film can be directly heated from above, the heater disposed above the heater By uniformizing the temperature of the surface used for heating the object to be heated (hereinafter, also referred to as heating surface), the resin film as the object to be heated can be easily heated at a uniform temperature. Therefore, for example, the cured state of the resist film formed by heating can be made uniform, and then the etching treatment can be performed to set the shape of the resist non-forming portion as set, and as a result, as set. It is possible to form the conductor circuit of

It is desirable that the heater arranged above is supported by a supporting member.

The heater is preferably a ceramic heater having a resistance heating element on the surface or inside of the ceramic substrate, and the ceramic substrate or the ceramic plate constituting the ceramic heater is made of a nitride ceramic or a carbide ceramic. desirable.

The heater is preferably a porous plate provided with a resistance heating element, and the porous plate is preferably made of ceramic.

The hot plate unit for semiconductor manufacturing / inspection equipment is preferably used at 100 to 800.degree.

The hot plate unit for semiconductor manufacturing / inspecting equipment of the third aspect of the present invention is a hot plate unit for semiconductor manufacturing / inspecting equipment having a mechanism for supplying an atmospheric gas to a semiconductor wafer or exhausting an internal gas. It is characterized in that the supply of the atmospheric gas or the exhaust of the internal gas is performed through the porous plate.

According to the third aspect of the present invention, in the semiconductor manufacturing / inspection process, when the resin film is heated and dried, the solvent or the like contained in the resin film is vaporized, and the organic gas is generated around the semiconductor wafer. Occurs, and even if it is difficult to dry quickly as it is, since such a gas can be discharged through the porous plate, the resist resin film is dried appropriately and quickly. be able to.

Further, since heating or cooling gas can be supplied to the periphery of the semiconductor wafer through the porous plate, the semiconductor wafer and the resin film mounted thereon can be quickly heated or cooled. It is possible to improve the production efficiency. Further, by supplying such a gas, it is possible to dilute the concentration of the gas generated by the vaporization of the solvent and the like, and to quickly discharge these gases.

Furthermore, since the pores of the porous plate allow the gas to be supplied and exhausted almost uniformly over the entire surface of the porous plate, the gas concentration in the space where the semiconductor wafer is placed is constant. Can be Therefore, the resin film for resist can be uniformly dried.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION A hot plate unit for a semiconductor manufacturing / inspecting apparatus according to the first aspect of the present invention is a hot plate unit for a semiconductor manufacturing / inspecting apparatus including a heater, and an object to be heated is placed upward. It is characterized in that it is heated by a heater arranged. The semiconductor manufacturing / inspecting apparatus hot plate unit of the second aspect of the present invention is a semiconductor manufacturing / inspecting apparatus hot plate unit including a heater and a ceramic plate.
It is characterized in that the surface used for heating the object to be heated is arranged so as to face the ceramic plate, and the object to be heated is heated by the heater arranged above.
Since the second invention is included in the concept of the first invention, the first invention and the second invention will be collectively described below as the first invention. I will.

FIG. 1 is a sectional view schematically showing an embodiment of the hot plate unit according to the first aspect of the present invention.
[Fig. 2] is a plan view of an upper ceramic heater that constitutes the hot plate unit shown in Fig. 1. In addition, FIG.
It is sectional drawing which shows another embodiment of the hot plate unit of 1st this invention typically.

The hot plate unit 1 includes two ceramic heaters 10 and 20 having resistance heating elements 12 and 22 formed of two or more circuits inside disk-shaped ceramic substrates 11 and 21, and these ceramic heaters. 10,
It is configured to include a support container 60 and a support member 52 in which 20 is fitted. In these two ceramic heaters 10 and 20, the heating surfaces 11b and 21b are arranged so as to face each other. Each of the support member 52 and the support container 60 has a structure in which a top plate or a bottom plate is integrally provided at the upper end or the lower end of a cylinder.

That is, the ceramic heater 20 located below is provided with a heat insulating ring 67 mounted on a substrate receiving portion 68 above the support container 60 having a bottomed cylindrical shape, and the heating surface 11 thereof.
The ceramic heater 1 is fitted in the state of b facing upward and is fixed by using the bolt 63 and the fixing metal fitting 64 inserted into the heat insulating ring 67, while the ceramic heater 1 positioned on the upper side is fixed.
No. 0 is fitted into a heat insulating ring 67 arranged below the bottomed cylindrical support member 52 with its heating surface 21b facing downward, and the bolt 63 inserted into the heat insulating ring 67.
It is fixed to the substrate receiving portion 55 by means of the fixing metal fitting 64 and the fixing metal fitting 64.
Are arranged so that the heating surfaces 11b and 21b face each other.

The bolt 63 is used for the ceramic substrate 1
It also has a function of fixing the fixing metal fitting 64 having a shape extended also on the first and the second parts 21. The fixing metal fitting 64 presses the ceramic substrates 11 and 21 fitted in the heat insulating ring 67 against the substrate receiving portion 55, It is fixed.

External terminals 13 are connected to the ends of the resistance heating elements 12 and 22 provided in the ceramic heaters 10 and 20 by soldering or the like via through holes 28 or the like.
Further, each of the ceramic heaters 10 and 20 is provided with a bottomed hole 14, and the bottomed hole 14 is provided in the bottomed hole 14.
3 is inserted and fixed by heat resistant resin or the like.

A refrigerant introduction pipe 66 is provided on the top plate 54 constituting the support member 52 arranged on the upper side, and the refrigerant is introduced into the inside of the support member 52 via the refrigerant introduction pipe 66. The ceramic substrate 11 is discharged from a coolant discharge port 61 provided at the upper part of the support member 52, and the ceramic substrate 11 is quickly cooled at the time of cooling after heating.

Similarly, the support container 60 arranged on the lower side is also provided with a coolant introduction pipe 66 and a coolant discharge port 61 on the bottom plate 62, and supports lifter pins for supporting or carrying a semiconductor wafer or the like from below. A guide tube 65 for penetrating and a lifter pin through hole 25 are formed.

Further, in the first aspect of the present invention, the heater 80 shown in FIG. 6 may be provided instead of the ceramic heater 10 shown in FIG. Therefore, the hot plate unit 200 shown in FIG. 6 will be described.

This hot plate unit 200 has 2
A heater 80 having a rubber heater 88 in which a nichrome wire 82 having a spiral pattern is sandwiched between two silicon rubbers 87 is provided between two porous plates 81 having a disc shape, and two or more heaters are provided inside. Support container 6 in which ceramic heater 20 having resistance heating element 22 formed of a circuit is fitted
The heating surface 81b of the heater 80 and the heating surface 21b of the ceramic heater 20 face each other.

The heater 80 holds the rubber heater 88 by inserting a bolt 85 into a through hole formed around the porous plate 81 and tightening it with a nut 86.
Although not shown in the figure, the silicon rubber 87 is formed with a large number of openings for passing gas.

Examples of the material of the porous plate 81 include metals and ceramics. Examples of the porous metal plate include those produced by sintering powder, and examples of the porous ceramic include porous ceramics used for filters. Also,
Examples of the material include SiC and cordierite. Of these, ceramics are desirable, especially S
A porous plate made of iC is desirable. This is because it is relatively easy to form a shape having pores inside, and is superior in heat resistance and thermal conductivity as compared with a metal.

The porosity of the porous plate 81 is 0.1 to 50%.
Is desirable. If it is less than 0.1%, the number of pores is too small to allow gas to pass therethrough, and if it exceeds 50%, the mechanical strength becomes low.

The shape of the porous plate is preferably a disc shape,
The diameter is preferably 200 mm or more, and optimally 250 mm or more. This is because the circular plate-shaped porous plate is required to have a uniform temperature, but the larger the diameter of the substrate, the more likely the temperature becomes uneven.

The thickness of the porous plate 81 is 1.0 to 50 mm.
Is desirable. If it is less than 1.0 mm, warping may occur or it may be easily cracked when heated at a high temperature, while if it exceeds 50 mm, the heat capacity becomes too large and the temperature rising / falling characteristics deteriorate.

The heating element for heating the heater 80 is not limited to the nichrome wire shown in the figure, and may be another metal wire or the like as long as it generates heat when a voltage is applied. Also, as for the insulator covering the heating element, it is not limited to the illustrated silicon rubber as long as it can prevent a short circuit and can withstand a high temperature.
It may be a fluororesin, a polyimide resin, polybenzimidazole (PBI), or the like, or may be a matte fiber made of ceramic or the like.

Further, both ends of the spiral pattern nichrome wire 82 provided on the heater 80 are inserted through through holes (not shown) provided on the porous plate 81 to be drawn out to the outside and connected to a power source or the like. Further, the heater 80 is provided with a bottomed hole 84, and the temperature measuring element 53 is inserted into the bottomed hole 84 and fixed by a heat resistant resin or the like.

In the hot plate unit according to the first aspect of the present invention, the heater 80 has a resistance heating element formed by applying a conductor paste on the upper surface of a single porous plate 81 and then firing it. Well, in some cases,
A resistance heating element may be formed inside the porous body. The method of forming the resistance heating element inside is the same as that of a normal ceramic heater, and examples thereof include a method of laminating another green sheet on the green sheet on which the pattern of the conductor paste is formed and firing.

The heater 80 is a cylindrical support member 5 having a bottom.
2 to the heat insulating ring 67 arranged in the lower part, the heating surface 81
It is fitted in a state in which b is faced down, and is fixed to the substrate receiving portion 55 by a bolt 63 and a fixing metal fitting 64 which are inserted into the heat insulating ring 67.

In the first aspect of the present invention, an exhaust port may be provided in the cylindrical support portion 57 or the like to discharge the gas generated by the drying of the resin film. Then, since the atmospheric gas is directly introduced, the temperature in the vicinity of the exhaust port is likely to drop, and it may not be possible to uniformly heat the resin film on the semiconductor wafer. Therefore, as shown in FIG. 6, it is desirable to supply the atmospheric gas and exhaust the internal gas via the heater 80 constituted by the porous plate 81.

Next, each member constituting the hot plate unit 1 will be described in more detail. First, the ceramic heater 10 provided above the hot plate unit 1 will be described. A ceramic substrate 11 forming the ceramic heater 10 is formed in a disc shape, and the resistance heating element 12 is provided inside the ceramic substrate 11.
Are formed. The resistance heating element 12 has a pattern in which the resistance heating elements 12a to 12f, which are arc patterns that are repeatedly formed so as to draw a part of a concentric circle, are arranged on the outermost periphery of the ceramic substrate 11, and part of the resistance heating elements 12a to 12f are arranged inside thereof. Resistance heating elements 12g to 12 that are concentric circular patterns cut
It is a pattern in which j is arranged.

The outermost resistance heating element 12a is formed by repeatedly forming arc-shaped patterns obtained by dividing a concentric circle into six in the circumferential direction, and the ends of adjacent arcs are connected by bending lines to form a series of circuits. ing. Six circuits of the resistance heating elements 12a to 12f, which have the same pattern as this, are formed close to each other so as to surround the outer circumference, and form an annular pattern as a whole.

Further, the end portions of the resistance heating elements 12a to 12f are formed inside the annular pattern in order to prevent the generation of cooling spots, etc. Therefore, the end portion of the outer circuit is the inner portion. Has been extended toward.

Resistance heating elements 12a-1 formed on the outermost periphery
Inside the 2f, resistance heating elements 12g to 12j each having a concentric circular circuit, a part of which is cut, are formed. In the resistance heating elements 12g to 12j, a series of circuits are configured by connecting the end portions of adjacent concentric circles with a resistance heating element that is linearly formed.

Further, the resistance heating elements 12a to 12f, 12
Between g, 12h, 12i and 12j, there is a strip (annular shape)
The heating element non-formation area of is provided, and in the center part,
A circular heating element non-forming area is provided.

Therefore, as a whole, annular resistance heating element forming regions and heating element non-forming regions are alternately formed from the outer side to the inner side, and these regions are formed in the size (caliber diameter) of the ceramic substrate. ), The thickness, etc., the temperature of the heating surface can be made uniform by appropriately setting. By forming the resistance heating element having such a pattern, the temperature of the heating surface 11b can be made uniform.

An external terminal 13 is connected to an end of the resistance heating element 12 via a through hole 28, etc., and a socket 3 having a metal wire 16 is attached to the external terminal 13, and the metal wire 16 is , Through-hole, and seal member 1
It is drawn out of the support member 52 via 9 and is connected to a power source (not shown).

A bottomed hole 14 for inserting a temperature measuring element 53 such as a thermocouple is formed on the upper surface of the ceramic substrate 11, a lead wire 70 is led out from the temperature measuring element 53, and a top plate of the supporting member 52 is formed. A through hole (not shown) 54 is drawn to the outside.

As the pattern of the resistance heating element formed on the ceramic substrate which constitutes the hot plate unit of the first aspect of the present invention, in addition to the shape based on the concentric circle as shown in FIG. A single pattern such as a circular shape, a combination of concentric circles and a bent line shape, or a combination of a spiral shape or an eccentric circle shape and a bent line shape can be used. The resistance heating element may have a spiral shape.

The number of circuits of the resistance heating element formed on the ceramic substrate is not particularly limited as long as it is two or more. However, in order to uniformly heat the heating surface, it is desirable that a large number of circuits be formed. A combination of a plurality of concentric circuits and a curved linear circuit is preferable. As shown in FIG. 3, in the ceramic substrate used in the hot plate unit of the first aspect of the present invention, the resistance heating element may be formed outside, that is, on the surface opposite to the heating surface. May be formed inside.

When the resistance heating element is formed inside the ceramic substrate, its forming position is not particularly limited.
From the surface opposite to the heating surface of the ceramic substrate,
It is preferable that at least one layer is formed at a position of up to 0%. This is because the heat diffuses while the heat propagates to the heating surface, and the temperature on the heating surface tends to be uniform.

When the resistance heating element is formed inside or outside the ceramic substrate, that is, on the surface, it is preferable to use a conductor paste made of metal or conductive ceramic. That is, when the resistance heating element is formed inside the ceramic substrate, after forming the conductor paste layer on the green sheet, the green sheets are laminated and fired.
A resistance heating element is formed inside. On the other hand, when the resistance heating element is formed on the surface, the resistance heating element is usually formed by firing to form a ceramic substrate, then forming a conductor paste layer on the surface and firing.

The above-mentioned conductor paste is not particularly limited, but it is preferable that the conductor paste contains metal particles or a conductive ceramic in order to ensure conductivity, and also contains a resin, a solvent, a thickener and the like.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively difficult to oxidize and have a resistance value sufficient to generate heat.

As the above-mentioned conductive ceramic, for example,
Examples thereof include tungsten and molybdenum carbides.
These may be used alone or in combination of two or more. The particle size of these metal particles or conductive ceramic particles is preferably 0.1 to 100 μm. This is because if it is less than 0.1 μm and too fine, it is easily oxidized, while if it exceeds 100 μm, it becomes difficult to sinter and the resistance value increases.

Even if the shape of the metal particles is spherical,
It may be flaky. When these metal particles are used, they may be a mixture of the above-mentioned spherical material and the above-mentioned scaly material. When the metal particles are scaly material, or a mixture of spherical material and scaly material, it becomes easier to hold the metal oxide between the metal particles and ensure the adhesion between the resistance heating element and the ceramic substrate. And the resistance value can be increased, which is advantageous.

The resin used for the conductor paste is
For example, an epoxy resin, a phenol resin, etc. are mentioned. Examples of the solvent include isopropyl alcohol and the like. Examples of the thickener include cellulose and the like.

When the conductor paste for the resistance heating element is formed on the surface of the ceramic substrate, metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable that Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be brought into close contact with each other.

Although the reason why the adhesion with the ceramic substrate is improved by mixing the metal oxide is not clear, the surface of the metal substrate or the surface of the non-oxide ceramic substrate is slightly oxidized. As a result, it is considered that the oxide film is formed, and the oxide films are sintered and integrated with each other through the metal oxide, and the metal particles and the ceramic adhere to each other. In addition, when the ceramic forming the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

Examples of the above metal oxide include, for example, oxidation.
Lead, zinc oxide, silica, boron oxide (B ₂O₃),Aluminum
Selected from the group consisting of Na, Yttria and Titania
At least one type is preferable. These oxides generate resistance
Metal particles and ceramics can be used without increasing the resistance of the heating element.
Because it can improve the adhesion with the substrate.
It

The above lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria and titania are in a weight ratio when the total amount of metal oxides is 100 parts by weight. 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1-
10, yttria is 1 to 50, titania is 1 to 50, and it is preferable that the total is adjusted within a range not exceeding 100 parts by weight. By adjusting the amount of these oxides within these ranges, the adhesion to the ceramic substrate can be particularly improved.

The amount of the metal oxide added to the metal particles is preferably 0.1% by weight or more and less than 10% by weight. Further, the area resistivity when the resistance heating element is formed using the conductor paste having such a configuration is preferably 1 to 45 mΩ / □.

When the area resistivity exceeds 45 mΩ / □, the amount of heat generated becomes too large with respect to the amount of applied voltage, and it is difficult to control the amount of heat generated by the ceramic substrate provided with a resistance heating element on the surface. . The amount of metal oxide added is 1
When it is 0% by weight or more, the sheet resistivity exceeds 50 mΩ / □, the amount of heat generation becomes too large, temperature control becomes difficult, and the uniformity of temperature distribution deteriorates.

When the resistance heating element is formed on the surface of the ceramic substrate, a metal coating layer is preferably formed on the surface portion of the resistance heating element. This is to prevent the internal metal sintered body from being oxidized and changing its resistance value.
The thickness of the metal coating layer formed is preferably 0.1 to 10 μm.

The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal.
Specific examples include gold, silver, palladium, platinum, nickel and the like. These may be used alone or in combination of two or more. Of these, nickel is preferred. When the resistance heating element is formed inside the ceramic substrate, the surface of the resistance heating element is not oxidized, and thus the coating is unnecessary. The ceramic substrate of the first aspect of the present invention is preferably used at 100 ° C. or higher, more preferably 200 ° C. or higher.

The material of the ceramic substrate constituting the ceramic heater of the first present invention is not particularly limited, and examples thereof include nitride ceramics, carbide ceramics, oxide ceramics and the like.

Examples of the nitride ceramics include metal nitride ceramics such as aluminum nitride, silicon nitride, boron nitride and titanium nitride. Further, as the above-mentioned carbide ceramics, metal carbide ceramics,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples thereof include tantalum carbide and tungsten carbide.

Examples of the oxide ceramics include metal oxide ceramics such as alumina, zirconia, cordierite and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are preferable to oxide ceramics. This is because the thermal conductivity is high. Further, among the nitride ceramics, aluminum nitride is most suitable. This is because the highest thermal conductivity is 180 W / m · K.

The ceramic material may contain a sintering aid. Examples of the sintering aid include, for example,
Examples thereof include alkali metal oxides, alkaline earth metal oxides and rare earth oxides. Among these sintering aids,
CaO, Y ₂ O ₃ , Na ₂ O, Li ₂ O and Rb ₂ O are preferred. The content of these is preferably 0.1 to 20% by weight. It may also contain alumina.

The above-mentioned ceramic substrate has a brightness according to JIS Z.
The value based on the standard of 8721 is preferably N6 or less. This is because those having such brightness are excellent in radiant heat amount and concealing property. Moreover, such a ceramic substrate enables accurate surface temperature measurement by a thermoviewer.

Here, the lightness N is such that the ideal lightness of black is 0 and the ideal lightness of white is 10, and the brightness of the color is between the lightness of black and the lightness of white. Each color is divided into 10 so that the perception of is equal to each other, and is displayed by symbols N0 to N10. And the actual measurement is N0-N
The color chart corresponding to 10 is compared. In this case, the first decimal place is 0 or 5.

The ceramic substrate having such characteristics has 100 to 5000 p of carbon in the ceramic substrate.
It is obtained by containing pm. There are amorphous carbons and crystalline carbons. Amorphous carbons can suppress a decrease in volume resistivity of a ceramic substrate at high temperatures, and crystalline carbons have Since the decrease in thermal conductivity at high temperature can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

Amorphous carbon is, for example, C, H or O.
It can be obtained by calcining a hydrocarbon consisting only of saccharides, preferably sugar, in air, and graphite powder or the like can be used as the crystalline carbon.
Carbon can be obtained by thermally decomposing an acrylic resin in an inert atmosphere and then applying heat and pressure. By changing the acid value of this acrylic resin, crystalline (non-crystalline) properties can be obtained. The degree of can be adjusted.

The shape of the ceramic substrate is preferably a disk shape, and the diameter thereof is preferably 200 mm or more, and 250
The optimum value is mm or more. The disk-shaped ceramic substrate is
This is because the uniformity of the temperature is required, and the larger the diameter of the substrate, the more likely the temperature becomes uneven. The thickness of the ceramic substrate is preferably 50 mm or less, more preferably 20 mm or less. Further, 1 to 5 mm is optimal. If the above-mentioned thickness is too thin, warpage is likely to occur when heated at high temperature,
On the other hand, if it is too thick, the heat capacity becomes too large and the temperature rising / falling characteristics deteriorate.

The porosity of the ceramic substrate is preferably 0 or 5% or less. The porosity is measured by the Archimedes method. This is because it is possible to suppress the decrease in thermal conductivity at high temperatures and the occurrence of warpage.

In the first aspect of the present invention, a thermocouple can be embedded in the ceramic substrate if necessary. This is because the temperature of the resistance heating element can be measured with a thermocouple and the temperature can be controlled by changing the voltage and the amount of current based on the data.

The size of the joining portion of the metal wires of the thermocouple is preferably equal to or larger than the wire diameter of each metal wire, and 0.5 mm or less. With such a configuration, the heat capacity of the joint portion is reduced, and the temperature is converted into a current value accurately and quickly. Therefore, the temperature controllability is improved and the temperature distribution on the heating surface of the wafer is reduced. Examples of the thermocouple include J
As listed in IS-C-1602 (1980),
Examples include K type, R type, B type, E type, J type, and T type thermocouples.

Next, the ceramic heater 20 arranged below will be described. Lower ceramic heater 20
Has the same structure as the upper ceramic heater 10 described above, but differs in the following points.

That is, unlike the ceramic substrate 11, the ceramic substrate 21 forming the ceramic heater 20 is formed with a plurality of lifter pin through holes 25 for inserting lifter pins used for transporting a semiconductor wafer and the like. A through hole communicating with these is also formed in the bottom of the container 60, and a guide tube 65 is interposed between the two so that the lifter pin can be smoothly inserted.

As described above, the ceramic substrate 21 has
Lifter pin through hole 2 for inserting the lifter pin
Although a plurality of 5 are provided, the plurality of lifter pins support an object to be heated, such as a semiconductor wafer on which the resin film 2 is formed, so as to be separated from the upper surface of the ceramic substrate 21 by a predetermined distance. An object to be heated can be placed and heating or the like can be performed.

Further, a through hole or a recess is formed in the ceramic substrate 21, and the support pin 18 having a pointed or hemispherical tip is inserted and fixed in the through hole or the like in a state of slightly protruding from the ceramic substrate 21. By placing an object to be heated such as the semiconductor wafer 4 on which the resin film 2 is formed,
The object to be heated can be placed in a state of being separated from the upper surface of the ceramic substrate 21 by a certain distance. The ceramic heater 20 arranged on the lower side is mainly used for the semiconductor wafer 4
Will play a role of keeping warm.

The pattern of the resistance heating element may be any pattern capable of uniformly heating a semiconductor wafer or the like to be heated, and is the same as the pattern of the resistance heating element constituting the ceramic heater 10 arranged on the upper side. May be different or different. In addition, these ceramic heaters 1
The resistance heating elements 0 and 20 may be provided outside or on the surface of the ceramic substrates 11 and 21, and may be provided inside, or only one of the resistance heating elements may be provided inside. May be.

The material of the ceramic substrate constituting the ceramic heater of the first present invention is not particularly limited, like the upper ceramic substrate 11.

Next, the support member 52 and the support container 60 that support the ceramic substrate will be described. In the support member 52 disposed on the upper side, the substrate receiving portion 55, the top plate supporting portion 56, and the connecting portion 59a used for joining with the supporting container 60 are integrally formed on the outer frame portion 59 having a bottomed cylindrical shape. And a top plate 54 is disposed on the upper part thereof, and is supported and fixed by a top plate support portion 56. Further, the outer frame portion 59 is extended below the ceramic substrate 11 to form a support portion 57. The support portion 57 supports the ceramic substrate 21 and the like, and the upper and lower ceramic substrates 11 and 21. A certain distance can be taken between. The support portion 57 has a cylindrical shape, and the space surrounded by the support portion 57 and the upper and lower ceramic substrates 11, 21 and the like is a sealed space.

A heat insulating ring 67 is mounted on the substrate receiving portion 68 integrally formed inside the outer frame portion 59, and the ceramic substrate 11 is fixed to the bolt 63 and the fixing via the heat insulating ring 67. It is fixed by a metal fitting 64.

The top plate 54 is provided with a refrigerant introduction pipe 66, through which the refrigerant is introduced into the support member 5.
2 is introduced into the inside of the support member 52 and is discharged from the coolant discharge port 61 provided in the upper portion of the support member 52, so that the ceramic substrate 11 is quickly cooled at the time of cooling after heating.

The supporting container 60 arranged on the lower side has substantially the same structure as the supporting member, but the above-mentioned supporting portion 57 is not formed, and the upper part of the supporting container 60 is almost the same as the ceramic substrate 21. It is different from the support member 52 in that the level is provided and the guide tube 65 and the lifter pin through hole 25 are provided.

Then, the supporting container 6 having such a structure
The 0 and the support member 52 are arranged so that the connecting portions 59a and 69a face each other, and are joined and integrated by the bolts 51 inserted through the connecting portions 59a and 69a. By removing the bolt 51, the ceramic substrates 11 and 21 can be easily removed from the support container 60 and the support member 52.

The material forming the support container 60 and the support member 52 is not particularly limited, and examples thereof include metals such as SUS, engineering plastics such as polyamide and polysulfone, polyacetal, fluororesin, aluminum nitride, silicon carbide and alumina. And the like. Among these, S is superior in heat resistance.
A metal such as US is desirable. The material of the heat insulating ring is preferably made of resin, and examples thereof include fluororesin.

When heating is performed using this hot plate unit 1, the ceramic substrate 2 arranged on the lower side is used.
The semiconductor wafer 4 is placed on the semiconductor wafer 1, the resin film 2 is formed on the semiconductor wafer 4, and then the distance between the semiconductor wafer 4 and the ceramic substrate 11 on the upper side is adjusted using, for example, lifter pins to arrange the ceramic heater 10 on the upper side. To heat. At this time, the temperature of the ceramic heater 10 arranged on the lower side is also raised to prevent the temperature of the semiconductor wafer 4 from decreasing.

In order that the distance between the semiconductor wafer 4 placed on the ceramic substrate 21 and the upper ceramic heater 10 can be adjusted, the support container in which the ceramic heater 10 is installed is fixed by an upper fixing member. The ceramic heater 20 is disposed in a lower position by adjusting the distance between the fixing member and the support container.
The configuration may be such that the distance between and can be adjusted.

FIG. 3 is a sectional view schematically showing another embodiment of the hot plate unit of the first present invention, and FIG. 4 is a plan view of the ceramic heater portion of the hot plate unit shown in FIG. It is a figure. 5 is a partially enlarged cross-sectional view of the ceramic heater above the hot plate unit shown in FIG.

The hot plate unit 100 includes a ceramic heater 30 having a resistance heating element 32 composed of two or more circuits on the surface of a disk-shaped ceramic substrate 31.
A disk-shaped ceramic plate 41, the ceramic heater 30, and the support container 8 into which the ceramic plate 41 is fitted.
0 and the support member 52, and the heating surface 31b of the ceramic heater 30 is arranged so as to face the ceramic plate 41.

That is, the ceramic plate 4 located below
1 is installed in a support container 80 having substantially the same structure as the case of the hot plate unit shown in FIG. 1, while the ceramic heater 30 located on the upper side is completely different from the case of the hot plate unit shown in FIG. The ceramic heater 30 is installed on the support member 52 having the same structure, so that the heating surface 31b of the ceramic heater 30 faces the ceramic plate 41. That is, the ceramic plate 41 is fitted into the heat insulating ring 67 mounted on the substrate receiving portion 88 in the upper portion of the support container 80 having a bottomed cylindrical shape, and is fixed using the bolt 63 and the fixing metal fitting 64. However, the support container 80 is different from the support container 60 shown in FIG. 1 in that the support container 80 does not include a through hole and a sealing member for exposing the metal wire connected to the ceramic substrate to the outside.

Next, the ceramic heater 30 arranged on the upper side will be described. This ceramic heater 30
This is different from the hot plate unit 1 shown in FIG. 1 in that the resistance heating element 32 is formed on the upper surface 31a of the ceramic substrate 31. That is, the ceramic substrate 31 is
The resistance heating element 32 is formed in a disc shape, and the resistance heating element 32 has a pattern (32a- 32l) and a plurality of concentric circular patterns (32m to 32p) on the inner peripheral portion. By forming the resistance heating element having such a pattern, the temperature of the heating surface 31b can be made uniform.

As shown in FIG. 5, the resistance heating element 3
A metal coating layer 130 is formed on the surface of 2, and an external terminal 33 is connected to an end of the resistance heating element 32 via a brazing material (not shown) or the like. Line 1
A socket 3 having 6 is attached and this metal wire 16
Is drawn out of the support member 52 and is connected to a power source (not shown).

A bottomed hole 34 for inserting a temperature measuring element 53 such as a thermocouple is formed on the upper surface of the ceramic substrate 31, the lead wire 70 is led out from the temperature measuring element 53, and the top plate of the supporting member 52 is formed. A through hole (not shown) 54 is drawn to the outside. In the hot plate unit shown in FIG. 3, instead of the ceramic heater 30 arranged on the upper side, the heater 80 made of a porous plate shown in FIG. 6 may be arranged.

As the pattern of the resistance heating element formed on the ceramic substrate constituting the hot plate unit of the first present invention, in addition to the combination pattern of the bent line shape and the concentric circle shape shown in FIG. Examples include a pattern based on the concentric circle shape as shown, a single pattern such as a spiral shape and an eccentric circle shape, or a combination of a spiral shape or an eccentric circle shape and a bent line shape.
The resistance heating element may have a spiral shape.

In the hot plate unit, the number of circuits composed of the resistance heating elements is not particularly limited as long as it is 2 or more, but in order to uniformly heat the heating surface, a large number of circuits are formed. Desirably, a combination of a plurality of concentric circuits and a bent line circuit is preferable. In the hot plate unit 100, the resistance heating element may be formed outside, that is, on the surface of the ceramic substrate, or may be formed inside the ceramic substrate.

When the resistance heating element is formed inside the ceramic substrate, its forming position is not particularly limited.
At least one layer is preferably formed on the upper surface of the ceramic substrate, that is, the surface opposite to the heating surface, up to 60% of its thickness. This is because the heat diffuses while the heat propagates to the heating surface, and the temperature on the heating surface tends to be uniform.

The other points of the ceramic substrate 31 and the resistance heating element 32 are the same as those of the ceramic substrates 11 and 21 constituting the hot plate unit 1 shown in FIG. 1, and therefore detailed description thereof will be omitted here.

Next, the ceramic plate 41 arranged on the lower side
Will be described. Ceramic plate 41 arranged on the lower side
A resistance heating element is not formed in the. Further, the ceramic plate 41 is not provided with through holes, and is not provided with external terminals, metal wires, sockets, or the like. For this reason, the ceramic plate 41 normally does not heat the object to be heated but plays a role of placing the object to be heated and keeping it warm. In the hot plate unit of the first aspect of the present invention, the resin film formed on the semiconductor wafer is heated from the upper side, so that the lower ceramic plate can heat the resin sufficiently even with such a configuration. . The ceramic plate may have a heating mechanism such as a resistance heating element.

When heating is performed using this hot plate unit 100, the semiconductor wafer 4 is placed on the lower ceramic plate 41 via the support pins 18, and the resin film 2 is placed thereon. After the formation, heating is performed by the ceramic heater 30 arranged on the upper side. In this case, the distance between the ceramic heater 30 and the semiconductor wafer 4 is adjusted in advance, and the semiconductor wafer 4 is mounted on the ceramic plate 41 via the support pins 18 so that the temperature of the semiconductor wafer 4 does not easily decrease. It is preferable to mount it on. Further, it is desirable that the ceramic plate 41 is heated in advance by the ceramic heater 30 and has a constant temperature. This is because the resin film 2 formed on the semiconductor wafer 4 can be heated more uniformly.

As described above, the ceramic plate may have a heating mechanism such as a resistance heating element. Examples of the heating mechanism include a Peltier element and the like, in addition to a resistance heating element, and a refrigerant introducing pipe 66 may be used to introduce a heated medium into a supporting container to heat the ceramic plate. .

Further, like the hot plate unit 1, the ceramic heater 30 is installed so that the distance between the semiconductor wafer 4 mounted on the ceramic plate 41 and the upper ceramic heater 30 can be adjusted. The container may be suspended from the fixing member, and the distance between the fixing member and the support container may be adjusted.

As described above, according to the hot plate unit of the first aspect of the present invention (or the second aspect of the present invention), the ceramic heater is provided above the resin film for resist, and the resist film is directly heated from above. Therefore, by making the temperature of the heating surface of the ceramic substrate arranged above uniform, it is possible to easily heat the object to be heated such as the resin film at a uniform temperature. Therefore, the cured state of the resist film after heating can be made uniform, and as a result, a resist film having a resist non-forming portion as set can be obtained by etching using a developer or the like. It is possible to form the conductor circuit of

Next, the hot plate unit of the third invention will be described. The hot plate unit according to the third aspect of the present invention is a semiconductor manufacturing / processing apparatus having a mechanism for supplying an atmospheric gas to a semiconductor wafer or exhausting an internal gas.
A hot plate unit for an inspection apparatus, characterized in that supply of atmospheric gas or exhaust of internal gas is performed through a porous plate.

In the hot plate unit according to the third aspect of the present invention, the atmospheric gas is supplied or the internal gas is exhausted through the porous plate. As shown in FIG. 6, the porous plate may constitute a part of the heater arranged on the resin film, or the support portion 57 and the like may be formed of a porous plate. Of course, the plate-like body supporting the semiconductor wafer may be made of a porous plate. These materials and their required properties are as described above.

FIG. 6 is a sectional view schematically showing an embodiment of a hot plate unit according to the third invention.
Since the configuration of the hot plate unit 200 shown in FIG. 6 has been described in the description of the first aspect of the present invention, the description thereof will be omitted. As mentioned above,
Although the support portion 57 and the like may be used as a porous plate to supply the atmospheric gas and discharge the internal gas, as shown in the figure, the heater 80 may be configured by the porous plate 81 to supply the atmospheric gas and the inside. It is desirable to discharge the gas. This is because the gas can be quickly and uniformly discharged near the source of the gas generated by heating the resin film.

According to the hot plate unit of the third aspect of the present invention, in the semiconductor manufacturing / inspection process, when the resin film 2 is heated and dried, the solvent or the like contained in the resin film 2 is vaporized and the organic type Even when the gas is generated around the semiconductor wafer 4, such a gas can be discharged through the porous plate 81, so that the resin film 2 can be dried appropriately and quickly. .

Further, since it is possible to supply a gas such as air to the surroundings of the semiconductor wafer 4 from the coolant introduction pipe 66, the through hole 61, etc. through the porous plate 81, it is possible to vaporize the solvent or the like. It is possible to dilute the concentration of the generated gas and quickly discharge these gases. In addition, since heating or cooling gas can be supplied to the periphery of the semiconductor wafer via the porous plate 81, the semiconductor wafer and the resin film 2 mounted thereon can be quickly heated or cooled. It is possible to improve the production efficiency.

Further, by passing through the pores of the porous plate 81, the gas can be supplied and exhausted almost uniformly over the entire surface of the porous plate 81, so that the semiconductor wafer 4 is mounted. The gas concentration in the space can be kept constant. Therefore, the resin film 2 can be uniformly dried.

Next, a method of manufacturing a hot plate unit using a ceramic substrate having a resistance heating element formed therein according to the first aspect of the present invention will be described with reference to FIGS.

(1) Green Sheet Manufacturing Step First, a powder of nitride ceramic is mixed with a binder, a solvent and the like to prepare a paste, and the green sheet 50 is manufactured using this. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and if necessary, a sintering aid such as yttria may be added. In addition, crystalline or amorphous carbon may be added when producing the green sheet.

Further, the binder is preferably at least one selected from acrylic binders, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, the solvent is preferably at least one selected from α-terpineol and glycol.

The paste obtained by mixing these is molded into a sheet by the doctor blade method to obtain the green sheet 5
Create 0. The thickness of the green sheet 50 is 0.1
5 mm is preferable. Next, on the obtained green sheet,
If necessary, a part that will be a through hole for inserting a support pin for supporting a semiconductor wafer, a part that will be a through hole for inserting a lifter pin for carrying a semiconductor wafer, a temperature measuring element such as a thermocouple, etc. A portion to be a bottomed hole for embedding, a portion to be a through hole for connecting the resistance heating element to an external terminal, and the like are formed. The above-mentioned processing may be performed after forming a green sheet laminate described below.

(2) Step of printing conductor paste on the green sheet A conductor paste layer 120 made of the conductor paste is formed on the green sheet 50 by using the above-mentioned conductor paste. In addition, a conductive paste is filled in the portion to be the through hole to form the filling layer 280.

The conductive paste contains metal particles or conductive ceramic particles. Examples of the material of the metal particles include tungsten and molybdenum, and examples of the conductive ceramics include tungsten carbide and molybdenum carbide.

The average particle diameter of the above-mentioned metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. Average particle size is less than 0.1 μm or 5 μm
If it exceeds, it is difficult to print the conductor paste.

Examples of such a conductor paste include, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve and polyvinyl alcohol. And a composition (paste) in which 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol is mixed.

(3) Green Sheet Laminating Step The green sheet 50 not printed with the conductor paste or the like prepared in the step (1) is a green sheet having the conductor paste layer 120 etc. prepared in the step (2). Sheet 5
It is laminated on and under 0 (FIG. 7A). At this time, the number of green sheets 50 laminated on the upper side is made larger than the number of green sheets 50 laminated on the lower side, and the formation position of the resistance heating element 12 is eccentric to the surface opposite to the heating surface. .

Specifically, it is preferable that the number of the upper green sheets 50 is 20 to 50, and the number of the lower green sheets 50 is 5 to 20.

(4) Firing Step of Green Sheet Laminated Body The green sheet laminated body is heated and pressed to sinter the green sheet 50 and the conductor paste inside to produce a ceramic substrate (FIG. 7B). . Heating temperature is 10
00 to 2000 ° C. is preferable, and the pressure applied is 10 to 2 ° C.
0 MPa is preferable. The heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen or the like can be used.

If necessary, a through hole for inserting a lifter pin, a bottomed hole for inserting a temperature measuring element, a bag hole 17 for inserting an external terminal, etc. may be provided on the obtained ceramic substrate. It is provided (FIG. 7C). The through hole, the bottomed hole, and the blind hole can be formed by polishing the surface and then performing blasting such as drilling or sandblasting.

Next, the external terminal 13 is connected to the through hole 28 exposed from the bag hole 17 using gold solder or the like (FIG. 7).
(D)). Further, although not shown, the external terminal 13
For example, a socket having a metal wire is detachably attached. The heating temperature is 90 to 45 in the case of soldering.
0 ° C. is preferred and 900 ° C. for brazing
~ 1100 ° C is preferred. Further, a thermocouple as a temperature measuring element is sealed with a heat resistant resin to form a ceramic heater.

(5) Thereafter, the resistance heating element 12 is provided inside, and the ceramic substrate 21 having the lifter pin through hole formed in the step (4) is placed in the support container 6
It was installed at 0 using a bolt 63 or the like. Further, the resistance heating element 12 is provided inside, and the ceramic substrate 11 in which the lifter pin through hole is not formed is attached to the support member 52 with the bolt 63.
Etc.

After that, the connecting portion 69a of the supporting container 60 and the connecting portion 59a of the supporting member 52 are opposed to each other, and then the bolt 5
The manufacturing of the hot plate unit 1 is completed by connecting the metal wires 16 extending from the respective sockets to the power source. The hot plate unit thus obtained is the hot plate unit according to the first aspect of the present invention. In the above method, when the resistance heating element is formed on the outside, the conductor paste is not embedded in the laminate of the green sheets, a sintered body is obtained, and then a conductor paste layer is formed on the surface of the sintered body. , May be fired.

Next, with reference to FIGS. 8A to 8D, a method of manufacturing a hot plate unit using a ceramic substrate having a resistance heating element formed outside according to the first aspect of the present invention will be described.

(1) Manufacturing process of ceramic substrate A slurry is prepared by adding a sintering aid such as yttria or a binder to the above-described nitride ceramic such as aluminum nitride, if necessary, and then spray drying the slurry. And the like, and the granules are put into a mold or the like to be pressed into a plate shape to prepare a green shaped body. At this time, carbon may be contained.

Next, this green body is heated and fired to be sintered to produce a ceramic plate-like body. After that, the ceramic substrate 31 is manufactured by processing it into a predetermined shape, but it may have a shape that can be used as it is after firing. By heating and firing while applying pressure, it becomes possible to manufacture the ceramic substrate 31 having no pores. The heating and firing may be carried out at a sintering temperature or higher, but in the case of a nitride ceramic, it is 1000 to 2500 ° C.

Next, if necessary, a bottomed hole 34 for embedding a temperature measuring element such as a thermocouple and a recess for embedding a support pin for supporting a semiconductor wafer in the ceramic substrate 31 (see FIG. (Not shown) etc. are formed (FIG. 8).
(A)).

(2) Step of Printing Conductor Paste on Ceramic Substrate The conductor paste described above is used to print on the heating element pattern by a method such as screen printing to form a conductor paste layer. Since it is necessary for the resistance heating element to have a uniform temperature over the entire ceramic substrate, the resistance heating element has a pattern formed by combining the bent linear shape and the concentric circular shape as shown in FIG. 3 or as shown in FIG. However, it is preferable to print in a pattern based on concentric circles. The conductor paste layer is
It is preferable that the resistance heating element 32 after firing is formed to have a rectangular cross section and a flat shape.

(3) Firing of Conductor Paste The paste layer printed on the surface of the ceramic substrate 31 is heated and fired to remove the resin and the solvent, and the metal particles are sintered to be baked on the surface of the ceramic substrate 31 for resistance. The heating element 32 is formed (FIG. 8B). The heating and firing temperature is preferably 500 to 1000 ° C. When the above-mentioned metal oxide is added to the conductor paste, the metal particles, the metal oxide and the ceramic substrate are sintered and integrated, so that the adhesion between the resistance heating element and the ceramic substrate is improved.

(4) Formation of Metal Covering Layer Next, the metal covering layer 130 is provided on the surface of the resistance heating element 32 (FIG. 8C). The metal coating layer 130 is formed by electrolytic plating,
It can be formed by electroless plating, sputtering or the like, but in consideration of mass productivity, electroless plating is most suitable.

(5) Attachment of terminals, etc. External terminals 33 for connection to a power source are attached to the ends of the pattern of the resistance heating element 32 by using solder (not shown). Further, a temperature measuring element (not shown) is inserted into the bottomed hole 34 and sealed with a heat resistant resin such as polyimide or ceramics (FIG. 8D). In manufacturing the ceramic plate, after the step (1) is performed, a bottomed hole may be provided and a temperature measuring element may be attached.

After that, the connecting portion 89a of the supporting container 80 and the connecting portion 59a of the supporting member 52 are opposed to each other, and then the bolt 5
The production of the hot plate unit 1 is completed by connecting the metal wires 16 extending from the respective sockets to the power source by connecting them with each other.

Next, a method for manufacturing a hot plate unit using the porous plate according to the first invention and the third invention will be described.

(1) Step of manufacturing porous plate After preparing a slurry by adding a sintering aid such as yttria or a binder to ceramics such as silicon carbide as necessary, the slurry is subjected to cold isostatic pressing. A porous plate 81 made of ceramic is manufactured by pressurizing using a method or the like to form a plate or the like, heating, firing and sintering. In addition,
The heating and firing are set slightly lower than the normal sintering temperature.

Next, the bottomed hole 8 for embedding a temperature measuring element such as a thermocouple in the porous plate 81, if necessary.
4. Through holes for inserting bolts, wiring, etc. are formed.

(2) Step of forming heating element on porous plate A rubber heater 88 having nichrome wire 82 as a heating element sandwiched between two silicon rubbers 87 is sandwiched between porous plates 81 to form a screw hole. The bolt 85 is inserted, and the porous plate 81 is tightened with the nut 86 to be integrated into the heater 80. Since the heating element needs to keep the temperature of the entire heater 80 uniform, it is preferable that the heating element has a spiral pattern. However, the heater 80 may have a structure in which the rubber heater 88 is fixed to the upper part of one porous plate 81 with bolts or the like, and the porous plate 81 is further arranged above the heater 80 having such a structure. The heater 80 may be placed and fixed.

(3) Connection to power source etc. Both ends of the nichrome wire 82 provided in the heater 80 are inserted into the through holes provided in the porous plate 81 and connected to an external power source or the like. Further, a temperature measuring element is inserted into the bottomed hole 84, and is sealed and fixed with a heat resistant resin such as polyimide or ceramic. (4) After that, such a heater having a heating element is installed on the support member 52 using the bolts 63 and the like. Also, a ceramic substrate 11 having a resistance heating element 12 provided therein
Are installed in the support container 60 using the bolts 63 and the like.

Thereafter, the connecting portion 69a of the supporting container 60 and the connecting portion 59a of the supporting member 52 are opposed to each other, and then the bolt 5
The manufacturing process of the hot plate unit 200 is completed by connecting the metal wires 16 extending from the both ends of the nichrome wire 82 and the socket to the power source.
Hereinafter, the present invention will be described in more detail.

Example (Example 1) Production of hot plate unit (see FIG. 7) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttrium oxide (Y)
₂ O ₃ : Yttria, average particle size: 0.4 μm) 4 parts by weight,
Using a paste prepared by mixing 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of an alcohol consisting of 1-butanol and ethanol, a paste having a thickness of 0.47 mm was formed by a doctor blade method. A green sheet 50 was produced.

(2) Next, the green sheet 50 is
After drying at 0 ° C. for 5 hours, through holes and the like to be the through holes 28 were formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm and an acrylic binder of 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A.

Tungsten particles 10 having an average particle diameter of 3 μm
A conductor paste B was prepared by mixing 0 part by weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent and 0.2 part by weight of a dispersant. This conductor paste A was printed on the green sheet by screen printing to form a conductor paste layer 120 for the resistance heating element 12. The printed pattern is a circular arc repeating pattern formed by dividing a concentric circle in the outermost circumference in the circumferential direction and a concentric circular pattern inside thereof as shown in FIG. 2, and the width of the conductor paste layer is 10 mm and the thickness thereof is 10 mm. The height was 12 μm. Also,
The conductor paste B was filled in the portions to be the through holes to form the filling layer 280 (FIG. 7A).

Green sheet 50 after the above processing
37 sheets of green sheets 50 on the upper side (heating surface), 13 sheets of lower side, 130 ° C, 8M
The layers were laminated at a pressure of Pa (FIG. 7 (b)).

(4) Next, the obtained laminated body was degreased in nitrogen gas at 600 ° C. for 5 hours, at 1890 ° C. and a pressure of 15M.
Hot pressing was performed at Pa for 10 hours to obtain an aluminum nitride sintered body having a thickness of 3 mm. This was cut into a disk shape of 300 mm, and a resistance heating element 12 and a through hole 2 having a thickness of 6 μm and a width of 10 mm (aspect ratio: 1666) were cut inside.
The ceramic substrates 11 and 21 having No. 8 were used.

(5) Next, after the ceramic substrates 11 and 21 obtained in (4) are polished with a diamond grindstone, a mask is placed and the surface is provided with a thermocouple for blasting by blasting with glass beads. A bottom hole 14 and, if necessary, a lifter pin through hole 25 for inserting a lifter pin for carrying a semiconductor wafer or the like are provided.

(6) Further, a portion right below the through hole 28 is cut with a drill to have a diameter of 3.0 mm and a depth of 0.5.
7 mm, a through hole 28 is exposed to expose the through hole 28 (FIG. 7 (c)), and a gold solder made of Ni-Au is used for the through hole 28 to form the through hole 28 for the external terminal 13 with a brazing material.
It was fixed to (Fig. 7 (d)).

(7) A plurality of thermocouples (not shown) for temperature control were embedded in the holes with bottoms, filled with a polyimide resin, and cured at 190 ° C. for 2 hours. (8) After that, a resistance heating element is provided inside such a
In the step (5), the ceramic substrate 21 having the lifter pin through hole 25 formed therein is fitted into the heat insulating ring 67 installed in the substrate receiving portion 68, and the bolt 63 and the fixing metal member 6 are attached.
Fixed by 4. Further, the ceramic substrate 11 provided with the resistance heating element 12 therein and not having the lifter pin through hole formed therein is fitted into the heat insulating ring 67 provided in the substrate receiving portion 55 shown in FIG. It was fixed using 64.

After that, the support container 60 and the support member 52 were joined by the bolts 51, and the metal wires 16 extending from the respective sockets 3 were connected to a power source, whereby the manufacture of the hot plate unit 1 was completed. (Example 2) Production of hot plate unit (see FIG. 8) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y
₂ O ₃ : 4 parts by weight of yttria, average particle size 0.4 μm), 12 parts by weight of acrylic resin binder, and alcohol were spray-dried to produce a granular powder.

(2) Next, the granular powder was put into a mold and molded into a flat plate to obtain a green molded body (green).

(3) The green body after the processing is hot-pressed at a temperature of 1800 ° C. and a pressure of 20 MPa,
An aluminum nitride sintered body having a thickness of 3 mm was obtained. next,
A disk body having a diameter of 300 mm is cut out from this plate body, and the surface is polished with a diamond paste having an average particle size of 1 μm to obtain a ceramic plate body (ceramic substrate 31).
And Next, this plate-shaped body is drilled to have a bottomed hole (diameter: 1.1 mm, depth: 2 for embedding a thermocouple).
mm) 34 was formed (FIG. 8A).

(4) Ceramic substrate 3 obtained in (3) above
A conductor paste was printed by screen printing on the surface of No. 1 opposite to the surface to be the heating surface. The print pattern is
The pattern was a combination of a bent line shape and a concentric circle shape as shown in FIG. As the conductor paste, Solbest PS603D manufactured by Tokuriki Kagaku Kenkyusho, which is used for forming through holes of printed wiring boards, was used.

This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), boron oxide (25% by weight). % By weight) and 7.5% by weight of a metal oxide composed of alumina (5% by weight). Also,
The silver particles had an average particle size of 4.5 μm and were flaky.

(5) Next, the sintered body on which the conductor paste is printed is heated and fired at 780 ° C. to remove silver in the conductor paste.
Lead was sintered and baked on the sintered body to form a resistance heating element. The silver resistance heating element 32 has a thickness of 5 μm, a width of 2.4 mm, and an area resistivity of 7.
It was 7 mΩ / □ (FIG. 8 (b)).

(6) Next, nickel sulfate 80 g / l, sodium hypophosphite 24 g / l, sodium acetate 12 g
(5) in an electroless nickel plating bath consisting of an aqueous solution containing 1 g / l, boric acid 8 g / l, and ammonium chloride 6 g / l.
The sintered body prepared in 1 above was dipped to deposit a metal coating layer 130 (nickel layer) having a thickness of 1 μm on the surface of the silver resistance heating element 32 (FIG. 8C).

(7) A silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) is printed on the end portion of the resistance heating element 32 by screen printing to secure a connection with a power source and a solder layer (not shown). Was formed. Next, the external terminal 33 having a T-shaped cross section was placed on the solder layer and heated at 420 ° C. for reflow to attach the external terminal 33 to the end of the resistance heating element through the solder layer (FIG. 8). (D)).

(8) Insert a thermocouple (not shown) for temperature control into the bottomed hole 34 and fill it with polyimide resin,
It was cured at 190 ° C. for 2 hours to obtain a ceramic substrate 31 having a resistance heating element 32 formed on the surface opposite to the heating surface. On the other hand, the ceramic plate 41 has (1) to
A disc-shaped sintered body is manufactured by performing the step (3), and the lifter pin through hole 45 and the bottomed hole (diameter:
1.1 mm, depth: 2 mm) 44.

As shown in FIG. 3, the ceramic plate 41 was fitted in the heat insulating ring 67 installed in the substrate receiving portion 88 and fixed by the bolt 63 and the fixing metal fitting 64.
Further, the ceramic substrate 31 provided with the resistance heating element 32 on the upper surface 31a was fitted into the heat insulating ring 67 installed in the substrate receiving portion 55 shown in FIG. 1 and fixed by using the bolt 63 and the fixing metal fitting 64. After that, the support container 80 and the support member 52 were joined by the bolts 51, and the metal wires 16 extending from the respective sockets 3 were connected to a power source, thereby completing the manufacture of the hot plate unit 100.

Example 3 (1) A composition containing 100 parts by weight of SiC powder (average particle diameter: 0.5 μm), 0.5 part by weight of carbon, 5 parts by weight of B ₄ C, and an acrylic binder was cold cooled. Using a hydrostatic press, the pressure was increased to 100 MPa, and the pressure was baked at 2100 ° C. for 5 hours in an argon gas atmosphere to give a diameter of 3
Two 00 mm porous plates 81 were manufactured. (2) Next, a screw hole having a diameter of 5 mm is provided around the porous plate 81 made of SiC, and the rubber heater 88 in which the nichrome wire 82 having a spiral pattern is sandwiched between two silicon rubbers 87 is provided on the porous plate 81. It is sandwiched between the two, the bolt 85 is inserted into the screw hole, and the porous plate 81 is tightened and integrated with the nut 86 to form a heater 80 as shown in FIG.
The silicone rubber 87 was provided with a plurality of openings so that gas could pass through. (3) Then, the heater 80 was fitted into the heat insulating ring 67 installed in the substrate receiving portion 55 and fixed by the bolt 63 and the fixing metal fitting 64. Further, the resistance heating element 12 is internally provided.
The ceramic substrate 11 in which the through hole for the lifter pin was not formed was fitted into the heat insulating ring 67 installed in the substrate receiving portion 68 shown in FIG. 1, and fixed by using the bolt 63 and the fixing metal fitting 64.

Thereafter, the connecting portion 69a of the supporting container 60 and the connecting portion 59a of the supporting member 52 are opposed to each other, and then the bolt 5
The manufacturing of the hot plate unit 200 was completed by connecting the two ends of the nichrome wire 82 and the metal wires 16 extending from the sockets to the power source.

Comparative Example 1 Hot Plate Unit (See FIG. 7) A hot plate unit is obtained by removing the supporting member 52 and the upper ceramic heater 10 from the hot plate unit 1 obtained in Example 1. .

A silicon wafer having a surface coated with a resin film was placed on the hot plate units according to Examples 1 to 3 and the hot plate unit according to Comparative Example 1, and the resin film was dried by applying electricity. After exposure with ultraviolet rays, the silicon wafer was heated at 150 ° C. for 30 minutes to be cured to form a resist film. Then DM
Using a DG (diethylene glycol dimethyl ether) solution, the average thickness of the resist film after the etching process was performed on the resist film and the variation in the thickness were measured by the following method. That is,

(A) A point at an arbitrary end of the silicon wafer on which the resist film is formed is selected, cut from the end at a position of 5 mm toward the center of the silicon wafer, and the exposed part is a scanning electron microscope. The thickness of the resist film was measured by photographing with (SEM), and this thickness was set as a reference thickness. Moreover, the unevenness of the surface was measured starting from the point where the thickness was measured.

(B) Using a shape measuring instrument (manufactured by KEYENCE CORPORATION), the unevenness of the resist film surface is measured with respect to a linear portion starting from the above reference point and passing through the center of the silicon wafer and reaching 5 mm before the other end. did. Here, the reason why the edges of the silicon wafer are not separated by 5 mm is that when a silicon wafer coated with a resin film is placed and heated, this portion is a portion where temperature variations do not pose a problem.

(C) From the data obtained in (b) above, the average value (T ₁ ) of the resist film thickness, the minimum thickness, and the maximum thickness data can be obtained.

(D) By selecting nine points different from the above reference points and performing the same measurements as in the above (a) to (c), the average thickness (T ₁ to T _{1 0)} was measured. The intervals between the reference points were made as uniform as possible.

(E) From the average value of the obtained thicknesses, the minimum thickness and the maximum thickness of the resist film, the variation in the thickness of the resist film is calculated as shown in the following formula (1). did. Variation in thickness of resist film (%) = [(maximum or minimum value of measured thickness-average value of thickness) × 100] / average value of thickness (1)

Further, in each hot plate unit, the time until the drying of the resin film was completed was measured. Average thickness of the obtained resist film, variation in thickness,
The drying time is shown in Table 1 below.

[0174]

[Table 1]

As shown in Table 1, when the hot plate units according to Examples 1 to 3 were used for heating, the resist film after the etching process had a thickness variation with respect to the average thickness thereof of -0.1. Was 0.1%, but Comparative Example 1
When heated using the hot plate unit according to
The resist film after the etching treatment had a large variation in thickness with respect to the average thickness thereof of −1.0 to + 1.0%.

This is considered to be due to the following reason.
In the hot plate unit according to the example, the ceramic heater is provided above the resin film formed on the surface of the silicon wafer, and the resin film can be directly heated from above. Since the temperature of the heating surface of the ceramic substrate arranged above is uniform, the resin film can be heated at a uniform temperature and the cured state of the resist film after drying can be uniform.

On the other hand, in the hot plate unit according to the comparative example, since the resin film is heated only from below, compared with the case of directly heating from above, a silicon wafer is present below the resin film and the It is considered that since an air layer is present under the wafer, variations in temperature occur in the silicon wafer, and the cured state of the resist film after drying becomes uneven.

Regarding the drying time, Examples 1, 2
In the hot plate unit according to the third embodiment, the time required to complete the drying was shorter than that of the hot plate unit according to the present invention. It is considered that this is because it is possible to discharge the gas generated at the time of drying the resin film through the porous plate by using the heater constituted by the porous plate.

[0179]

As described above, according to the hot plate unit of the first and second aspects of the present invention, the ceramic heater is provided above the resin film formed on the surface of the semiconductor wafer, and the resin film is removed from above. Since it can be directly heated, the resin film can be easily heated at a uniform temperature by making the temperature of the heating surface of the ceramic substrate arranged above uniform. Therefore, for example, the cured state of the resist film after drying can be made uniform, and when the cured resist film is subjected to processing such as etching, due to the difference in the cured state of the resist film, the resist It is possible to form the conductor circuit as set on the semiconductor wafer without causing variations in the size of the formation portion and the size of the resist non-formation portion.

Further, according to the hot plate unit of the third aspect of the present invention, in addition to the above effects, when the resin film is heated and dried in the semiconductor manufacturing / inspecting process,
Even when the solvent or the like contained in the resin film is vaporized and an organic gas is generated around the semiconductor wafer, such a gas can be discharged through the porous plate. The resin film can be suitably dried.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an example of an embodiment of a hot plate unit according to the present invention.

FIG. 2 is a bottom view schematically showing a ceramic heater which is a part of the hot plate unit shown in FIG.

FIG. 3 is a sectional view schematically showing another example of the embodiment of the hot plate unit according to the present invention.

FIG. 4 is a bottom view schematically showing a ceramic heater which is a part of the hot plate unit shown in FIG.

5 is a partially enlarged cross-sectional view schematically showing the ceramic heater shown in FIG.

FIG. 6 is a sectional view schematically showing another example of the embodiment of the hot plate unit according to the present invention.

7A to 7D are cross-sectional views schematically showing a part of the manufacturing process of the hot plate unit shown in FIG.

8A to 8D are cross-sectional views schematically showing a part of the manufacturing process of the hot plate unit shown in FIG.

[Explanation of symbols]

1, 100 Hot plate unit 2 Resin film 3 Socket 4 Semiconductor wafer 10, 20, 30 Ceramic heater 11, 21, 31, 41, Ceramic substrate 11b, 21b, 31b Heating surface 11a, 31a Upper surface 21a Bottom surface 12 (12a to 12j) , 22, 32 (32a to 32)
p) Resistance heating element 130 Metal coating layer 14, 24, 34, 44 Bottomed hole 25, 45 Through hole 53 Temperature measuring element 13, 33 External terminal 80 Heater 81 Porous plate 82 Nichrome wire 87 Silicon rubber

Continued front page    (72) Inventor Jun Ohashi             1-1 Ibide, Northern Ibigawa-cho, Ibi-gun, Gifu Prefecture             Within the corporation F term (reference) 3K092 PP20 QA05 QB02 QB26 QB30                       QB43 QB44 QB47 QB62 QB65                       RE02 RE08 RF03 RF11 RF17                       RF19 RF27 VV22 VV40                 5F046 KA04

Claims (10)

[Claims] 1. Manufacturing of a semiconductor including a heater
A hot plate unit for a semiconductor manufacturing / inspecting device, characterized in that an object to be heated is heated by a heater arranged above. 2. A hot plate unit for a semiconductor manufacturing / inspection apparatus, comprising a heater and a ceramic plate, wherein the heater has a surface used for heating an object to be heated facing the ceramic plate. Has been placed in
A hot plate unit for a semiconductor manufacturing / inspection apparatus, wherein the object to be heated is heated by the heater arranged above. 3. The hot plate unit for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the heater arranged above is supported by a supporting member. 4. The hot plate unit for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the heater is a ceramic heater having a resistance heating element on a surface or inside of a ceramic substrate. 5. The hot plate unit for a semiconductor manufacturing / inspecting apparatus according to claim 4, wherein the ceramic substrate or the ceramic plate forming the ceramic heater is made of a nitride ceramic or a carbide ceramic. 6. The hot plate unit for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the heater is a porous body having a resistance heating element. 7. The hot plate unit according to claim 6, wherein the porous body is made of ceramic. 8. The hot plate unit for semiconductor manufacturing / inspection equipment according to claim 1, wherein the hot plate unit for semiconductor manufacturing / inspection equipment is used at 100 to 800 ° C. 9. The hot plate unit for a semiconductor manufacturing / inspecting apparatus according to claim 2, wherein the ceramic plate has a heat generating mechanism. 10. An atmospheric gas is supplied to the semiconductor wafer,
Alternatively, a hot plate unit for a semiconductor manufacturing / inspecting device having a mechanism for exhausting an internal gas, wherein supply of an atmospheric gas or exhaust of an internal gas is performed through a porous plate. -Hot plate unit for inspection equipment.