JP2003014568A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JP2003014568A JP2003014568A JP2001201936A JP2001201936A JP2003014568A JP 2003014568 A JP2003014568 A JP 2003014568A JP 2001201936 A JP2001201936 A JP 2001201936A JP 2001201936 A JP2001201936 A JP 2001201936A JP 2003014568 A JP2003014568 A JP 2003014568A
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- pressure sensor
- semiconductor pressure
- wall portion
- lid member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、流体圧力を半導体
圧力センサ素子により検出して電気信号として出力する
半導体圧力センサ装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor device which detects fluid pressure by a semiconductor pressure sensor element and outputs it as an electric signal.
【0002】[0002]
【従来の技術】従来の技術では、流体導入路から導入さ
れる被測定流体の圧力により、半導体圧力センサ素子を
収容し接合しているセンサケースのセンサ素子接合用壁
部と半導体圧力センサ素子とは引き離される方向の力を
受けていた。この従来例の一つが特開2000−199
725号公報に記載されている。2. Description of the Related Art In the prior art, a sensor element joining wall portion of a sensor case accommodating and joining a semiconductor pressure sensor element and a semiconductor pressure sensor element by the pressure of a fluid to be measured introduced from a fluid introduction path. Was receiving a force in the direction of separation. One of the conventional examples is Japanese Patent Laid-Open No. 2000-199.
No. 725 publication.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うな構造の従来の半導体圧力センサ装置では、被測定流
体の圧力により、センサ素子接合用壁部と半導体圧力セ
ンサ素子とが引き離されるおそれがあり、両者の気密性
が維持できなくなるおそれがあった。However, in the conventional semiconductor pressure sensor device having such a structure, there is a possibility that the sensor element joining wall portion and the semiconductor pressure sensor element may be separated from each other by the pressure of the fluid to be measured, There was a risk that the airtightness of both could not be maintained.
【0004】本発明の目的は、センサ素子接合用壁部と
半導体圧力センサ素子との接合を強固にして両者の気密
性を高く維持できる半導体圧力センサ装置を提供するこ
とである。An object of the present invention is to provide a semiconductor pressure sensor device capable of strengthening the bonding between the sensor element bonding wall portion and the semiconductor pressure sensor element and maintaining a high airtightness therebetween.
【0005】本発明の他の目的は、センサケースが、セ
ンサ素子接合用壁部の側面とは反対側に位置する側面側
に信号処理回路を構成する電気部品の少なくとも一部を
収納する電気部品収納スペースを備えた半導体圧力セン
サ装置を提供することである。Another object of the present invention is to provide an electrical component in which a sensor case accommodates at least a part of an electrical component forming a signal processing circuit on a side surface side opposite to a side surface of a sensor element joining wall portion. An object of the present invention is to provide a semiconductor pressure sensor device having a storage space.
【0006】本発明の他の目的は、流体自身の摩擦帯電
による高電圧から半導体圧力センサ素子を保護したり、
電気部品収納スペースに内蔵されている信号処理回路を
外来雑音から保護して信頼度の高い半導体圧力センサ装
置を提供することである。Another object of the present invention is to protect the semiconductor pressure sensor element from high voltage due to frictional charging of the fluid itself,
It is an object of the present invention to provide a highly reliable semiconductor pressure sensor device by protecting a signal processing circuit built in an electric component housing space from external noise.
【0007】更に本発明の他の目的は、安価で小型で信
頼度の高い半導体圧力センサ装置を提供することであ
る。Still another object of the present invention is to provide a semiconductor pressure sensor device which is inexpensive, small in size and highly reliable.
【0008】[0008]
【課題を解決するための手段】本発明は、拡散抵抗が形
成されたダイアフラム部及びダイアフラム部の外周部を
支持するダイアフラム支持部を一体に有する半導体圧力
センサ素子と、半導体圧力センサ素子のダイアフラム支
持部が接合されるセンサ素子接合用壁部及びダイアフラ
ム部に圧力測定の対象となる被測定流体を導く流体導入
路を有して、半導体圧力センサ素子を収容するセンサケ
ースとを具備する半導体圧力センサ装置を改良の対象と
する。SUMMARY OF THE INVENTION The present invention is directed to a semiconductor pressure sensor element integrally having a diaphragm portion having diffusion resistance and a diaphragm support portion for supporting an outer peripheral portion of the diaphragm portion, and a diaphragm support for the semiconductor pressure sensor element. Pressure sensor having a sensor case for accommodating a semiconductor pressure sensor element, which has a fluid introduction path for guiding a fluid to be measured, which is an object of pressure measurement, to a sensor element joining wall section to which a section is joined and a diaphragm section The device is targeted for improvement.
【0009】本発明においては、センサケースの流体導
入路を、被測定流体の圧力が半導体圧力センサ素子をセ
ンサ素子接合用壁部に向かって押しつける方向に半導体
圧力センサ素子に作用し被測定流体をダイアフラム部に
導くように構成する。この構成により、センサ素子接合
用壁部と半導体圧力センサ素子との接合を強固にして両
者の気密性を高く維持できる。そのため、半導体圧力セ
ンサ装置の製造性と長期間使用に対する信頼性に効果が
ある。In the present invention, the fluid to be measured acts on the semiconductor pressure sensor element in the direction in which the pressure of the fluid to be measured pushes the semiconductor pressure sensor element toward the sensor element bonding wall portion through the fluid introduction path of the sensor case. It is configured so as to lead to the diaphragm part. With this configuration, the sensor element joining wall portion and the semiconductor pressure sensor element can be joined firmly and the airtightness therebetween can be maintained high. Therefore, the semiconductor pressure sensor device is effective in terms of manufacturability and reliability for long-term use.
【0010】更に本発明においては、半導体圧力センサ
素子の少なくとも出力信号を処理する信号処理回路を更
に備えていて、上記のセンサケースを、センサ素子接合
用壁部のダイアフラム支持部が接合されている一方の側
面とは反対側に位置する他方の側面側に信号処理回路を
構成する電気部品の少なくとも一部を収納する電気部品
収納スペースを更に備えるように構成する。これにより
半導体圧力センサ素子の出力信号が発生源のすぐ近傍で
処理されるため、外来雑音に対して妨害を受け難くして
半導体圧力センサ装置の出力信号の信頼度に効果があ
る。Further, in the present invention, a signal processing circuit for processing at least an output signal of the semiconductor pressure sensor element is further provided, and the sensor case is joined to the diaphragm supporting portion of the sensor element joining wall portion. An electric component storage space for accommodating at least a part of the electric components forming the signal processing circuit is further provided on the other side face side opposite to the one side face. As a result, since the output signal of the semiconductor pressure sensor element is processed in the immediate vicinity of the source, it is less likely to be disturbed by external noise, which is effective for the reliability of the output signal of the semiconductor pressure sensor device.
【0011】また本発明においては、センサケースを、
センサ素子接合用壁部の一方の側面側に位置し且つ半導
体圧力センサ素子を囲んで内部にセンサ素子収容スペー
スを形成する第1の周壁部分と、センサ素子接合用壁部
の他方の側面側に位置し且つ内部に電気部品収納スペー
スを形成する第2の周壁部分とを備えて構成させる。セ
ンサ素子接合用壁部には、一方の側面に接合された半導
体圧力センサ素子と一方の側面との間に形成された空間
と電気部品収納スペースとを連通させる貫通孔を設け
る。第1の周壁部分の開口部を塞ぐ第1の蓋部材には、
流体導入路の一部を構成する筒体を一体に設け、第2の
周壁部分の開口部を塞ぐ第2の蓋部材は、電気部品収納
スペースを気密状態にしないように第2の周壁部分に対
して取り付ける。この構成によって、センサ素子収容ス
ペースは被測定流体の圧力で覆われる。また、第2の蓋
部材は、電気部品収納スペースを気密状態にしないよう
に第2の周壁部分に対して取り付けられるので、電気部
品収納スペース内は大気圧に保たれ、貫通孔により電気
部品収納スペースと連通するセンサ素子接合用壁部と半
導体圧力センサ素子とに囲まれた空間も大気圧に保たれ
ることになる。これによって、ダイアフラム部は、被測
定流体の圧力量に応じて撓む。そのため、被測定流体の
圧力計測を可能とし、半導体圧力センサ装置は正しく機
能する。In the present invention, the sensor case is
A first peripheral wall portion which is located on one side surface side of the sensor element joining wall portion and surrounds the semiconductor pressure sensor element to form a sensor element housing space therein, and on the other side surface side of the sensor element joining wall portion. And a second peripheral wall portion located inside and forming an electric component storage space. The sensor element joining wall portion is provided with a through hole that communicates the space formed between the semiconductor pressure sensor element joined to one side surface and the one side surface with the electrical component storage space. For the first lid member that closes the opening of the first peripheral wall portion,
The second lid member that integrally forms the tubular body that constitutes a part of the fluid introduction path and closes the opening of the second peripheral wall portion is provided on the second peripheral wall portion so as not to make the electrical component storage space airtight. Install it against. With this configuration, the sensor element housing space is covered with the pressure of the fluid to be measured. Further, since the second lid member is attached to the second peripheral wall portion so as not to keep the electric component storage space airtight, the electric component storage space is kept at atmospheric pressure, and the electric component storage space is accommodated by the through hole. The space surrounded by the sensor element joining wall communicating with the space and the semiconductor pressure sensor element is also kept at atmospheric pressure. As a result, the diaphragm portion bends according to the amount of pressure of the fluid to be measured. Therefore, the pressure of the fluid to be measured can be measured, and the semiconductor pressure sensor device functions properly.
【0012】更に本発明においては、上記の第2の蓋部
材を金属材料により形成し、使用状態においてアースに
電気的に接続されるように構成する。また同様に上記第
1の蓋部材を金属材料により形成し、使用状態において
アースに電気的に接続されるように構成する。電気部品
は信号処理用の集積回路を含んでおり、集積回路を第1
の蓋部材と第2の蓋部材との間に位置するように配置す
る。この構成によって、流体自身の摩擦帯電による高電
圧から半導体圧力センサ素子を保護したり、外来雑音か
ら集積回路を保護したりすることができる。これによっ
て半導体圧力センサ装置の信頼度が向上する。Further, in the present invention, the second lid member is made of a metal material and is configured to be electrically connected to the ground when in use. Similarly, the first lid member is made of a metal material, and is configured to be electrically connected to the ground when in use. The electrical component includes an integrated circuit for signal processing, and the integrated circuit is a first
It is arranged so as to be located between the cover member and the second cover member. With this configuration, it is possible to protect the semiconductor pressure sensor element from a high voltage due to frictional electrification of the fluid itself, and to protect the integrated circuit from external noise. This improves the reliability of the semiconductor pressure sensor device.
【0013】更に本発明においては、センサ素子接合用
壁部の他方の側面上に電気部品を表面実装するための複
数の表面実装用電極が形成し、電気部品の電極を複数の
表面実装用電極上に電気的且つ機械的に接続する。これ
によって、表面実装用電子部品が電気部品収納スペース
に収納され、安価で小型で信頼度の高い半導体圧力セン
サ装置を得ることができる。Further, in the present invention, a plurality of surface-mounting electrodes for surface-mounting the electric component are formed on the other side surface of the sensor element joining wall portion, and the electrode of the electric component is formed by the plurality of surface-mounting electrodes. Electrically and mechanically connected on top. As a result, the surface mount electronic component is housed in the electric component housing space, and it is possible to obtain an inexpensive, compact, highly reliable semiconductor pressure sensor device.
【0014】[0014]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。図1(A)は、本発明の実
施の形態の半導体圧力センサ装置の正面図であり、図1
(B)は図1(A)のB−B線断面図であり、図1
(C)は図1(A)に示す半導体圧力センサ装置の背面
図である。図2は図1に示す半導体圧力センサ装置のセ
ンサ素子収容スペースを形成する開口部を塞ぐ第1の蓋
部材13及び筒体11の斜視図である。なお、図1
(A)及び(C)は、理解を容易にするため、蓋部材1
5並びに筒体11及び蓋部材13をそれぞれ取り除いた
状態で示している。図1において、符号1は半導体圧力
センサ素子を示している。この半導体圧力センサ素子1
は、Si半導体基板により形成されており、ダイアフラ
ム部1aとダイアフラム支持部1bとにより一体に成形
されている。ダイアフラム部1aは四角形の平板状を有
しており、表面には、4つの抵抗素子からなる抵抗ブリ
ッジ回路と1つの抵抗素子からなる抵抗回路とが形成さ
れている。この抵抗ブリッジ回路等が形成されている表
面は、保護用の絶縁樹脂層で覆われている。ダイアフラ
ム支持部1bは、角筒状を有しており、ダイアフラム部
1aの裏面側の外周部を支持している。このダイアフラ
ム支持部1bは、後述する態様でセンサケース3に取り
付けられている。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1A is a front view of the semiconductor pressure sensor device according to the embodiment of the present invention.
1B is a cross-sectional view taken along the line BB of FIG.
1C is a rear view of the semiconductor pressure sensor device shown in FIG. FIG. 2 is a perspective view of the first lid member 13 and the tubular body 11 that close the opening that forms the sensor element housing space of the semiconductor pressure sensor device shown in FIG. Note that FIG.
(A) and (C) show the lid member 1 for easy understanding.
5 and the cylindrical body 11 and the lid member 13 are removed. In FIG. 1, reference numeral 1 indicates a semiconductor pressure sensor element. This semiconductor pressure sensor element 1
Is formed of a Si semiconductor substrate, and is integrally formed by the diaphragm portion 1a and the diaphragm support portion 1b. The diaphragm portion 1a has a rectangular flat plate shape, and a resistance bridge circuit including four resistance elements and a resistance circuit including one resistance element are formed on the surface thereof. The surface on which the resistance bridge circuit and the like are formed is covered with an insulating resin layer for protection. The diaphragm support portion 1b has a rectangular tubular shape, and supports the outer peripheral portion of the diaphragm portion 1a on the back surface side. The diaphragm support portion 1b is attached to the sensor case 3 in a manner described later.
【0015】符号3はセンサケースを示している。セン
サケース3は、センサ素子接合用壁部3aと第1の周壁
部分3bと第2の周壁部分3cとを有している。センサ
素子接合用壁部3aは、ほぼ四角形の板形状を呈してお
り、中央には横断面が円形の貫通孔9が形成されてい
る。センサ素子接合用壁部3aの一方の側面には、貫通
孔9の一方の開口部が半導体圧力センサ素子1に覆われ
るように半導体圧力センサ素子1のダイアフラム支持部
1bの端面が気密に接合されている。また、センサ素子
接合用壁部3aの他方の側面には、後述する信号処理回
路6が形成されている。Reference numeral 3 indicates a sensor case. The sensor case 3 has a sensor element joining wall portion 3a, a first peripheral wall portion 3b, and a second peripheral wall portion 3c. The sensor element joining wall portion 3a has a substantially quadrangular plate shape, and a through hole 9 having a circular cross section is formed in the center thereof. An end surface of the diaphragm support portion 1b of the semiconductor pressure sensor element 1 is airtightly joined to one side surface of the sensor element joining wall portion 3a so that one opening of the through hole 9 is covered with the semiconductor pressure sensor element 1. ing. Further, a signal processing circuit 6 described later is formed on the other side surface of the sensor element joining wall portion 3a.
【0016】第1の周壁部分3bは、輪郭がほぼ四角形
の枠状を有しており、内側壁部分3fと外側壁部分3g
とを有している。内側壁部分3fは、半導体圧力センサ
素子1を囲むように、センサ素子接合用壁部3aの一方
の側面側に接合されている。外側壁部分3gは、内側壁
部分3fと段差を形成するように、内側壁部分3fに接
合されている。これにより、第1の周壁部分3bの内部
には、半導体圧力センサ素子1を収納するセンサ素子収
容スペース4が形成されることになる。外側壁部分3g
のセンサ素子接合用壁部3aが位置する側と反対側の開
口部の周囲の外面には、複数の外部接続電極23が形成
されている。また、外側壁部分3gの開口部には段部3
dが形成されており、この段部3dには、第1の周壁部
分3bの開口部を塞ぐように第1の蓋部材13が気密に
嵌合されている。第1の蓋部材13の中央には、貫通孔
が形成されており、この貫通孔の周囲には、流体導入路
5の一部を構成する円筒形の筒体11が一体に設けられ
ている。流体導入路5は、半導体圧力センサ素子1のダ
イアフラム部1aの近傍に圧力測定の対象となる被測定
流体を導く役割を果たしている。The first peripheral wall portion 3b has a frame shape having a substantially quadrangular outline, and has an inner wall portion 3f and an outer wall portion 3g.
And have. The inner wall portion 3f is joined to one side surface side of the sensor element joining wall portion 3a so as to surround the semiconductor pressure sensor element 1. The outer wall portion 3g is joined to the inner wall portion 3f so as to form a step with the inner wall portion 3f. As a result, the sensor element housing space 4 for housing the semiconductor pressure sensor element 1 is formed inside the first peripheral wall portion 3b. Outer wall part 3g
A plurality of external connection electrodes 23 are formed on the outer surface around the opening on the side opposite to the side where the sensor element joining wall 3a is located. Further, the step portion 3 is provided in the opening of the outer wall portion 3g.
d is formed, and the first lid member 13 is airtightly fitted to the step portion 3d so as to close the opening of the first peripheral wall portion 3b. A through hole is formed in the center of the first lid member 13, and a cylindrical tubular body 11 forming a part of the fluid introduction path 5 is integrally provided around the through hole. . The fluid introduction path 5 plays a role of guiding the fluid to be measured, which is a pressure measurement target, in the vicinity of the diaphragm portion 1a of the semiconductor pressure sensor element 1.
【0017】第2の周壁部分3cは、輪郭がほぼ四角形
の枠状を有しており、信号処理回路6を囲むように、セ
ンサ素子接合用壁部3aの他方の側面側に位置してい
る。信号処理回路6は、半導体圧力センサ素子の出力信
号を処理する回路であり、本例では、信号処理回路6上
に信号処理用の集積回路を含む2つの電気部品17が搭
載されている。これにより、第2の周壁部分3cの内部
には、電気部品17を収納し且つ貫通孔9と連通する電
気部品収納スペース7が形成されることになる。第2の
周壁部分3cのセンサ素子接合用壁部3aが位置する側
と反対側の開口部の周囲の外面には、複数の外部接続電
極25が形成されている。また、第2の周壁部分3cの
開口部には段部3eが形成されており、この段部3eに
は、第2の周壁部分3cの開口部を塞ぐように第2の蓋
部材15が僅かな隙間をあけて気密状態にならないよう
に嵌合されている。このように、第2の周壁部分3cと
第2の蓋部材15とは気密状態にないため、電気部品収
納スペース7内は大気圧に保たれ、貫通孔9により電気
部品収納スペース7と連通するセンサ素子接合用壁部3
aと半導体圧力センサ素子1とに囲まれた空間も大気圧
に保たれることになる。以上の構成により、流体導入路
5を通してセンサ素子収容スペース4内に流入した被測
定流体の圧力は、半導体圧力センサ素子1をセンサケー
ス3のセンサ素子接合用壁部3aに押し付ける方向に働
き、ダイアフラム部1aは、被測定流体の圧力量に応じ
て撓む。そのため、センサ素子接合用壁部3aと半導体
圧力センサ素子1との接合が強固になり、両者の気密性
は維持される。The second peripheral wall portion 3c has a frame shape with a substantially quadrangular outline, and is located on the other side surface side of the sensor element joining wall portion 3a so as to surround the signal processing circuit 6. . The signal processing circuit 6 is a circuit for processing the output signal of the semiconductor pressure sensor element, and in this example, two electric components 17 including an integrated circuit for signal processing are mounted on the signal processing circuit 6. As a result, inside the second peripheral wall portion 3c, the electric component housing space 7 for housing the electric component 17 and communicating with the through hole 9 is formed. A plurality of external connection electrodes 25 are formed on the outer surface of the second peripheral wall portion 3c around the opening on the side opposite to the side where the sensor element joining wall portion 3a is located. Further, a step portion 3e is formed in the opening of the second peripheral wall portion 3c, and the second lid member 15 is slightly formed in the step portion 3e so as to close the opening of the second peripheral wall portion 3c. It is fitted so that it does not become airtight with a large gap. As described above, since the second peripheral wall portion 3c and the second lid member 15 are not in an airtight state, the electric component storage space 7 is maintained at the atmospheric pressure, and the through hole 9 communicates with the electric component storage space 7. Wall 3 for joining sensor elements
The space surrounded by a and the semiconductor pressure sensor element 1 is also kept at atmospheric pressure. With the above configuration, the pressure of the fluid to be measured that has flowed into the sensor element housing space 4 through the fluid introduction path 5 acts in the direction in which the semiconductor pressure sensor element 1 is pressed against the sensor element joining wall portion 3a of the sensor case 3 and the diaphragm. The portion 1a bends according to the amount of pressure of the fluid to be measured. Therefore, the bonding between the sensor element bonding wall portion 3a and the semiconductor pressure sensor element 1 is strengthened, and the airtightness of both is maintained.
【0018】第1の蓋部材13及び第2の蓋部材15の
一方又は両方は、金属材料により形成されており、使用
状態においてアースに電気的に接続されている。第1の
蓋部材13及び第2の蓋部材15は、金属材料の代わり
にプラスチックやセラミックスなどの絶縁体で形成し、
その表面を金属蒸着やメッキ又は導電塗装により導電性
を持たせても構わない。One or both of the first lid member 13 and the second lid member 15 are made of a metal material and are electrically connected to the ground in a used state. The first lid member 13 and the second lid member 15 are formed of an insulator such as plastic or ceramics instead of a metal material,
The surface may be made conductive by metal vapor deposition, plating or conductive coating.
【0019】センサ素子接合用壁部3aの他方の側面上
に形成された信号処理回路6は、電気部品17を表面実
装するための複数の表面実装用電極19を含んでおり、
電気部品17の電極17aは複数の表面実装用電極19
の一部の電極上に電気的且つ機械的に接続されている。
また、第1の周壁部分3bの内側壁部分3f上には複数
の配線パターン21が形成されている。半導体圧力セン
サ素子1は複数のボンデングワイヤ21aを介して複数
の配線パターン21に接続されており、配線パターン2
1は、上記の複数の表面実装用電極19の一部の電極と
センサケース3の外側面に形成された導線部27の一部
により電気的に接続されている。これにより、半導体圧
力センサ素子1から発生した出力信号は、電気部品17
に導びかれる。そして、電気部品17により信号処理さ
れた出力信号は、表面実装用電極19の一部及び導線部
27の一部を介して外部接続電極23または25に導び
かれ、外部に出力される。これによって、表面実装用電
子部品が電気部品収納スペースに収納され、安価で小型
で且つ外来雑音にも強い信頼度の高い半導体圧力センサ
装置を得ることができる。The signal processing circuit 6 formed on the other side surface of the sensor element bonding wall portion 3a includes a plurality of surface mounting electrodes 19 for surface mounting the electric component 17.
The electrode 17a of the electric component 17 is a plurality of surface mounting electrodes 19
Are electrically and mechanically connected to some of the electrodes.
Further, a plurality of wiring patterns 21 are formed on the inner wall portion 3f of the first peripheral wall portion 3b. The semiconductor pressure sensor element 1 is connected to a plurality of wiring patterns 21 via a plurality of bonding wires 21a, and the wiring pattern 2
1 is electrically connected to a part of the plurality of surface mounting electrodes 19 and a part of the conductor wire portion 27 formed on the outer surface of the sensor case 3. Thereby, the output signal generated from the semiconductor pressure sensor element 1 is transmitted to the electric component 17
Be guided to. Then, the output signal subjected to the signal processing by the electric component 17 is guided to the external connection electrode 23 or 25 through a part of the surface mounting electrode 19 and a part of the conductive wire portion 27, and is output to the outside. As a result, the surface mount electronic component is housed in the electric component housing space, and it is possible to obtain a semiconductor pressure sensor device that is inexpensive, small in size, and resistant to external noise, and highly reliable.
【0020】[0020]
【発明の効果】本発明によれば、流体導入路から導入さ
れる被測定流体の圧力により、半導体圧力センサ素子が
センサ素子接合用壁部に押し付けられる方向の力を受け
るように構成され、これによりセンサ素子接合用壁部と
半導体圧力センサ素子との接合を強固にして両者の気密
性を高く維持できる。そのため、半導体圧力センサ素子
とセンサ素子接合用壁部との接合の耐久性が向上し、半
導体圧力センサ装置の製造性と長期間使用に対する信頼
性に効果がある。According to the present invention, the semiconductor pressure sensor element is configured to receive a force in the direction of being pressed against the sensor element joining wall portion by the pressure of the fluid to be measured introduced from the fluid introduction path. As a result, the sensor element bonding wall portion and the semiconductor pressure sensor element can be firmly bonded to each other and the airtightness therebetween can be maintained high. Therefore, the durability of the joining between the semiconductor pressure sensor element and the sensor element joining wall portion is improved, which is effective for the manufacturability of the semiconductor pressure sensor device and the reliability for long-term use.
【0021】更に本発明においては、半導体圧力センサ
素子の取り付け方向を従来の方向に対して反転して取り
付けることにより、センサ素子収容スペースの反対側に
電気部品収納スペースを設けることができ、信号処理回
路の少なくとも一部を電気部品収納スペースに収納する
ことができる。これにより半導体圧力センサ素子の出力
信号が発生源のすぐ近傍のセンサケース内で処理され、
外来雑音に対して妨害を受け難くして出力信号の信頼度
を向上することができる。更にこれらスペースの開口部
を塞ぐ蓋部材を金属材料で形成しアースに接地すること
で、外来雑音に対する遮蔽効果を高め、出力信号の信頼
度を向上させることができる。Further, in the present invention, by mounting the semiconductor pressure sensor element by reversing the mounting direction of the semiconductor pressure sensor element to the conventional direction, it is possible to provide an electric component accommodating space on the opposite side of the sensor element accommodating space. At least a part of the circuit can be stored in the electric component storage space. This allows the output signal of the semiconductor pressure sensor element to be processed in the sensor case in the immediate vicinity of the source,
The reliability of the output signal can be improved by making it less likely to be disturbed by external noise. Furthermore, by forming a lid member that closes the openings of these spaces with a metal material and grounding it to the ground, the shielding effect against external noise can be enhanced and the reliability of the output signal can be improved.
【図1】(A)は、本発明の実施の形態の半導体圧力セ
ンサ装置の正面図であり、(B)は図1(A)のB−B
線断面図であり、(C)は図1(A)に示す半導体圧力
センサ装置の背面図である。1A is a front view of a semiconductor pressure sensor device according to an embodiment of the present invention, and FIG. 1B is a BB line in FIG. 1A.
It is a line sectional view, and (C) is a rear view of the semiconductor pressure sensor device shown in Drawing 1 (A).
【図2】図1に示す半導体圧力センサ装置のセンサ素子
収容スペースを形成する開口部を塞ぐ第1の蓋部材及び
筒体の斜視図である。FIG. 2 is a perspective view of a first lid member and a cylinder that close an opening that forms a sensor element housing space of the semiconductor pressure sensor device shown in FIG.
1 半導体圧力センサ素子 1a ダイアフラム部 1b ダイアフラム支持部 3 センサケース 3a センサ素子接合用壁部 3b 第1の周壁部分 3c 第2の周壁部分 5 流体導入路 7 電気部品収納スペース 9 貫通孔 11 筒体 13 第1の蓋部材 15 第2の蓋部材 17 電気部品 17a 電気部品の電極 19 表面実装用電極 21 配線パターン 21a ボンデングワイヤ 1 Semiconductor pressure sensor element 1a Diaphragm part 1b Diaphragm support 3 sensor case 3a Wall for joining sensor element 3b First peripheral wall portion 3c Second peripheral wall portion 5 Fluid introduction path 7 electrical parts storage space 9 through holes 11 cylinder 13 First lid member 15 Second lid member 17 electrical components 17a Electrode of electric component 19 Surface mounting electrodes 21 Wiring pattern 21a Bonding wire
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2F055 AA40 BB20 CC02 DD04 EE14 FF21 FF38 GG12 GG25 HH05 4M112 AA01 CA03 CA04 CA06 CA12 CA13 CA15 DA08 EA03 FA07 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 2F055 AA40 BB20 CC02 DD04 EE14 FF21 FF38 GG12 GG25 HH05 4M112 AA01 CA03 CA04 CA06 CA12 CA13 CA15 DA08 EA03 FA07
Claims (6)
び前記ダイアフラム部の外周部を支持するダイアフラム
支持部を一体に有する半導体圧力センサ素子と、 前記半導体圧力センサ素子の前記ダイアフラム支持部が
接合されるセンサ素子接合用壁部及び前記ダイアフラム
部に圧力測定の対象となる被測定流体を導く流体導入路
を有して、前記半導体圧力センサ素子を収容するセンサ
ケースとを具備する半導体圧力センサ装置において、 前記センサケースの前記流体導入路は、前記半導体圧力
センサ素子を前記センサ素子接合用壁部に向かって押し
つける方向に前記被測定流体の圧力が前記半導体圧力セ
ンサ素子に作用するように前記被測定流体を前記ダイア
フラム部に導くように構成されていることを特徴とする
半導体圧力センサ装置。1. A semiconductor pressure sensor element integrally including a diaphragm portion having a diffusion resistance and a diaphragm support portion supporting an outer peripheral portion of the diaphragm portion, and the diaphragm support portion of the semiconductor pressure sensor element are joined together. In a semiconductor pressure sensor device comprising a sensor element joining wall portion and a fluid introduction path for guiding a fluid to be measured which is a target of pressure measurement to the diaphragm portion, and a sensor case accommodating the semiconductor pressure sensor element, The fluid introduction path of the sensor case is the fluid to be measured so that the pressure of the fluid to be measured acts on the semiconductor pressure sensor element in a direction to press the semiconductor pressure sensor element toward the sensor element joining wall portion. A semiconductor pressure sensor device, wherein the semiconductor pressure sensor device is configured to be guided to the diaphragm portion.
出力信号を処理する信号処理回路を更に備え、 前記センサケースが、前記センサ素子接合用壁部の前記
ダイアフラム支持部が接合されている一方の側面とは反
対側に位置する他方の側面側に前記信号処理回路を構成
する電気部品の少なくとも一部を収納する電気部品収納
スペースを更に備えている請求項1に記載の半導体圧力
センサ装置。2. A signal processing circuit for processing at least an output signal of the semiconductor pressure sensor element, wherein the sensor case has one side surface to which the diaphragm support portion of the sensor element joining wall portion is joined. 2. The semiconductor pressure sensor device according to claim 1, further comprising an electric component storage space for accommodating at least a part of electric components constituting the signal processing circuit, on the other side surface located on the opposite side.
合用壁部の前記一方の側面側に位置し且つ前記半導体圧
力センサ素子を囲んで内部にセンサ素子収容スペースを
形成する第1の周壁部分と、前記センサ素子接合用壁部
の前記他方の側面側に位置し且つ内部に前記電気部品収
納スペースを形成する第2の周壁部分とを備えており、 前記センサ素子接合用壁部には、前記一方の側面に接合
された前記半導体圧力センサ素子と前記一方の側面との
間に形成された空間と前記電気部品収納スペースとを連
通させる貫通孔を形成されており、 前記第1の周壁部分の開口部を塞ぐ第1の蓋部材には、
前記流体導入路の一部を構成する筒体が一体に設けられ
ており、 前記第2の周壁部分の開口部を塞ぐ第2の蓋部材は、前
記電気部品収納スペースを気密状態にしないように前記
第2の周壁部分に対して取り付けられている請求項2に
記載の半導体圧力センサ装置。3. The sensor case includes a first peripheral wall portion located on the one side surface side of the sensor element joining wall portion and surrounding the semiconductor pressure sensor element to form a sensor element housing space inside. A second peripheral wall portion that is located on the other side surface side of the sensor element joining wall portion and that forms the electric component storage space therein, and the sensor element joining wall portion includes: A through hole that connects the space formed between the semiconductor pressure sensor element bonded to one side surface and the one side surface and the electric component storage space is formed, and the first peripheral wall portion is formed. For the first lid member that closes the opening,
The second lid member that is integrally provided with a cylindrical body that constitutes a part of the fluid introduction path and that closes the opening of the second peripheral wall portion does not make the electrical component storage space airtight. The semiconductor pressure sensor device according to claim 2, which is attached to the second peripheral wall portion.
成され、使用状態においてアースに電気的に接続される
ように構成されている請求項3に記載の半導体圧力セン
サ装置。4. The semiconductor pressure sensor device according to claim 3, wherein the second lid member is formed of a metal material and is configured to be electrically connected to a ground in a used state.
成され、使用状態においてアースに電気的に接続される
ように構成されており、 前記電気部品は信号処理用の集積回路を含んでおり、 前記集積回路は前記第1の蓋部材と第2の蓋部材との間
に位置するように配置されている請求項4に記載の半導
体圧力センサ装置。5. The first lid member is formed of a metal material and is configured to be electrically connected to a ground in a use state, and the electric component includes an integrated circuit for signal processing. The semiconductor pressure sensor device according to claim 4, wherein the integrated circuit is disposed so as to be located between the first lid member and the second lid member.
側面上には、前記電気部品を表面実装するための複数の
表面実装用電極が形成されており、前記電気部品の電極
は前記複数の表面実装用電極上に電気的且つ機械的に接
続されている請求項2に記載の半導体圧力センサ装置。6. A plurality of surface-mounting electrodes for surface-mounting the electric component are formed on the other side surface of the sensor element joining wall portion, and the electrodes of the electric component are the plurality of electrodes. The semiconductor pressure sensor device according to claim 2, wherein the semiconductor pressure sensor device is electrically and mechanically connected to the surface mounting electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001201936A JP2003014568A (en) | 2001-07-03 | 2001-07-03 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001201936A JP2003014568A (en) | 2001-07-03 | 2001-07-03 | Semiconductor pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003014568A true JP2003014568A (en) | 2003-01-15 |
Family
ID=19038825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001201936A Pending JP2003014568A (en) | 2001-07-03 | 2001-07-03 | Semiconductor pressure sensor |
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Cited By (4)
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JP2007071821A (en) * | 2005-09-09 | 2007-03-22 | Yamaha Corp | Semiconductor device |
JP2007315858A (en) * | 2006-05-24 | 2007-12-06 | Denso Corp | Pressure sensor |
US8022806B2 (en) | 2007-08-24 | 2011-09-20 | Panasonic Electric Works Co., Ltd. | Fluid pressure sensor package |
CN103620361A (en) * | 2011-06-21 | 2014-03-05 | 罗伯特·博世有限公司 | Pressure sensor arrangement for detecting a pressure of a fluid medium in a measurement area |
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JPH102819A (en) * | 1996-06-17 | 1998-01-06 | Yokogawa Electric Corp | Support structure |
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JP2007071821A (en) * | 2005-09-09 | 2007-03-22 | Yamaha Corp | Semiconductor device |
JP2007315858A (en) * | 2006-05-24 | 2007-12-06 | Denso Corp | Pressure sensor |
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