JP2002540623A - Semiconductor wafer cleaning apparatus and method - Google Patents

Abstract

(57) [Abstract] A cleaning method for removing contaminants from the surface of a semiconductor wafer. The megasonic nozzle and scrubbing brush are included in the cleaning device. The megasonic nozzle is configured to output megasonic agitated fluid to remove contaminant particles from the surface of the semiconductor wafer. The scrubbing brush is configured to contact the surface of the semiconductor wafer and rub off contaminant particles therefrom. Both the megasonic nozzle and the scrubbing brush are mounted in the cleaning assembly. The cleaning assembly uses a megasonic nozzle and a brush simultaneously to efficiently remove contaminant particles from the surface of the semiconductor wafer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

FIELD OF THE INVENTION

The field of the invention relates to semiconductor manufacturing processing. In particular, the present invention provides a more effective C
The present invention relates to an apparatus for cleaning a wafer after MP. In one embodiment, semiconductor wafer cleaning using a post-CMP megasonic and brush is disclosed.

[0002]

BACKGROUND OF THE INVENTION

Much of the power and practicality of today's digital IC devices can contribute to an increased level of integration. The underlying chips and ICs have more components (
Resistors, diodes, transistors, etc.) are integrated. Typical IC
Starting material is silicon of very high purity. The material grows as a single crystal.
This takes the shape of a solid cylinder. The crystal is then cut (like a bread) to produce a wafer typically 10-30 cm in diameter and 250 microns thick.

[0003] The outline of the features of IC components is commonly defined photolithographically by a process known as photolithography. Very fine surface contours are accurately reproduced by this technique. Photolithographic processing is used to define component areas and to stack components together. Complex ICs often have many different assembly layers, each layer having components, each layer having different interconnects, and each layer being stacked on top of an underlying layer. The resulting complex I
The topography of C often resembles a well-known "mountain" with many "grounds" and "valleys" on the ground, since the IC components are stacked on the underside of the silicon wafer.

In a photolithographic process, a mask image or pattern that determines various components is focused on a photosensitive layer using ultraviolet light. The image is collected on the surface using the optical means of a photolithographic tool and imprinted on the photosensitive layer. To form even smaller features, the progressively finer image must be concentrated on the surface of the photosensitive layer, for example, the optical resolution must be increased. As the number of optical divisions increases, the depth of focus of the mask image decreases accordingly. This is due to the narrow range of depth of focus due to high numerical aperture lenses in photolithography tools. This narrow depth of focus is often a limiting factor in the degree of resolution and the smallest components that can be obtained using photolithography tools. Extreme hills and valleys of complex ICs enhance the effect of reducing the depth of focus. Therefore, in order to properly focus the mask image that determines the submicron shape on the photosensitive layer, a precisely flat surface is desirable. Precisely flat (eg, fully planarized) surfaces allow for very small depths of focus, and also allow for the determination of extremely small components and subsequent fabrication.

[0005] Chemical-mechanical polishing (CMP) is a preferred method of completely planarizing a wafer. In this method, the chemical effect of the polishing slurry is used to remove the sacrificial layer of dielectric material or metal using mechanical contact between the wafer and the movable polishing pad. As a result of the polishing, the high regions (hills) of the microstructure are removed earlier than the low regions (valleys) of the microstructure, so that the difference in height is eliminated and the region becomes flat. Since CMP is the only technique that can planarize topography with a planarization distance in millimeters, the maximum angle after polishing is less than one degree.

FIG. 1 is a bottom view of a general conventional CMP apparatus 100, and FIG.
FIG. The wafer to be polished is sent to the CMP apparatus 100. The CMP apparatus 100 lifts the wafer with the arm 101 and places it on the rotating polishing pad 102. The polishing pad 102 is made of an elastic material, is often textured, and has a plurality of predetermined grooves 103 for assisting the polishing process. The polishing pad 102 rotates at a predetermined speed on a platen 104 or a turntable located below the polishing pad 102. Wafer 105 is held at a predetermined position on polishing pad 102 and arm 101 by carrier ring 112 and carrier 106. The lower surface (eg, “front” side) of wafer 105 is supported by polishing pad 102. The upper surface of the wafer 105 faces the lower surface of the carrier 106 of the arm 101. When the polishing pad 102 rotates, the arm 101
Rotates the wafer 105 at a predetermined speed. The arm 101 pushes the wafer 105 into the polishing pad 102 with a predetermined amount of downward force. The CMP apparatus 100 also
It has a slurry supply arm 107 extending over the radius of the polishing pad 102. The slurry supply arm 107 supplies the slurry flow onto the polishing pad.

[0007] The slurry is a mixture of deionized water and an abrasive, which chemically aids in smooth and predictable planarization of the wafer. The rotation of the polishing pad 102 and the wafer 105 and the polishing operation of the slurry allow the wafer 1 to move at a predetermined low speed.
05 is flattened or polished. A constant and predictable removal rate is important for the uniformity and performance of the wafer manufacturing process. The removal rate must be varied flexibly to produce a precisely planarized wafer with no topography on the surface. If the removal rate is too slow, the number of planarized wafers generated in a given period will decrease, reducing the wafer throughput of the manufacturing process. If the removal rate is too fast, the CMP planarization process will not be uniform over the entire surface of the wafer, reducing the yield of the manufacturing process.

In order to maintain a stable removal rate, the CMP apparatus 100
0 is provided. The adjustment assembly 120 has an adjustment arm 108 that extends across the radius of the polishing pad 102. The end effector 109 includes a polishing adjustment disk 110 used to roughen the surface of the polishing pad 102.
The adjustment disk 110 is rotated by the adjustment arm 108 and translates toward and away from the center of the polishing pad 102 so that the adjustment disk 110 covers the radius of the polishing pad 102. Therefore, when the polishing pad 102 rotates, the polishing pad 1
Almost all of the surface area 02 is covered. The rough polishing pad has a large number of very small depressions and recesses on its surface by the conditioning assembly 120 so that a large amount of slurry is delivered to the surface of the wafer and also effectively reduces the downward polishing force. By applying, the removal rate becomes faster. Without adjustment, the surface of the polishing pad 102 will be flat during the polishing process and the removal rate will gradually decrease. Conditioning assembly 120 re-roughens the surface of polishing pad 102, thereby improving slurry movement and increasing removal rates.

[0009] Therefore, the action of the rough surface of the polishing pad 102, the chemical softening action of the slurry, and the polishing action of the slurry are combined to polish the wafer 105, so that the microstructure of the planarization distance in millimeter units is completely removed. . When CMP is completed,
The wafer 105 is removed from the polishing pad 102 by the arm 101 and is prepared for the next stage of the device manufacturing process. However, before the next manufacturing process, the wafer 105
Must be cleaned to remove contaminants remaining from the CMP process (eg, polishing pad 102 particles, traces of slurry / abrasive, metal ions, etc.).

[0010] After the CMP process is completed, the surface of the wafer 105 is cleaned to remove particles, metal ions, and other such contaminants. As is known by those skilled in the art, it is very important to remove the contaminants remaining in the CMP process before proceeding with the wafer 105 to the next manufacturing process. For example, the presence of contaminating particles can hinder subsequent lithography, which can cause, for example, broken or shorted lines. The most widely used post-CMP cleaning process now uses a brush. In this case, the brush will keep the wafer 105 until all contaminants have been removed.
Used for rubbing the surface of the surface.

However, the use of a brush has a distinct disadvantage in that the brush must be in direct contact with the surface of the wafer 105 to effectively wipe off contaminants. The cleaning effect increases with increasing brush pressure on the surface. This is offset by the fact that the higher pressure increases the risk of damaging the wafer surface due to the brushing action of the brush. In addition, in many cases, contaminants adhere to the brush itself, so that the cleaning effect is reduced. Moreover, brushes tend to be less effective if there are microstructures in the recessed areas (eg, grooves, holes, etc.).

[0012] Because of the above-mentioned drawbacks related to post-CMP clean brush polishing, "Megasonic"
(Megasonic) Wafer cleaning technology is being developed. As is well known, megasonic cleaning uses a high frequency, highly agitated fluid stream (eg, deionized water) that flows over the surface of the wafer 105. The extreme agitation of the fluid stream forces removal of contaminants and polishing by-products. Megasonic cleaning has the advantage of removing contaminants and particles even in recessed areas without physical contact with the wafer, thus greatly reducing the risk of damage to the wafer surface. However, a major disadvantage of megasonic cleaning is that the cleaning action is not as effective as the cleaning action of brush polishing.

Therefore, what is needed is to complete the CMP process from the surface of the wafer after the completion of the CMP process.
A method and system for effectively removing contaminants and by-products. There is also a need for an effective post-CMP cleaning solution without risk of damaging the wafer surface. Furthermore,
A solution that effectively cleans and removes contaminants / by-products from the post-CMP wafer surface without damaging. The present invention provides a new solution to the above requirements.

[0014]

DISCLOSURE OF THE INVENTION

The present invention provides a method and system for effectively removing CMP contaminants and by-products from a wafer surface after completion of a CMP process. The present invention provides effective post-CMP cleaning without risk of damaging the surface of the wafer. The present invention effectively removes contaminants / by-products from post-CMP wafer surfaces without damage.

In one embodiment, the present invention is implemented as a cleaning device for removing contaminants from a surface of a semiconductor wafer. The megasonic nozzle and scrubbing brush are included in the cleaning device. The megasonic nozzle is configured to output a megasonic agitated fluid to remove contaminant particles from the semiconductor wafer surface. The scrubbing brush is configured to contact the surface of the semiconductor wafer and rub off contaminant particles therefrom. The cleaning assembly uses a megasonic nozzle and a brush simultaneously to effectively remove contaminant particles from the surface of the semiconductor wafer. Because the cleaning assembly uses megasonic agitated fluids and scrubbing brushes at the same time, more effective cleaning is obtained than using only one. Thus, the cleaning assembly effectively removes contaminants / by-products from the post-CMP wafer surface without damaging the surface.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

Now, a preferred specific example of semiconductor wafer cleaning using a megasonic and a brush after CMP of the present invention will be described in detail. Examples of these are shown in the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and incorporated herein by reference, illustrate embodiments of the invention and, together with the description, explain the principles of the invention.

While the present invention will be described with reference to preferred embodiments, it will be understood that the invention is not limited to these embodiments. On the contrary, the invention is intended to cover alternatives, modifications and equivalents, which are included within the spirit and scope of the invention as defined by the claims. Also, in the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However,
It will be apparent to one skilled in the art that the present invention may be practiced without these specific details. In other instances, well known methods, procedures, components, and circuits have not been described in detail as not to unnecessarily obscure aspects of the present invention.

The present invention provides a megasonic and brush combined semiconductor wafer cleaning method and system that effectively removes CMP contaminants and by-products from the wafer surface after completion of the CMP process. The present invention provides effective post-CMP cleaning without risk of damaging the surface of the wafer. The present invention provides a C
Effectively cleans and removes contaminants / by-products from the wafer surface after MP.

Chemical mechanical polishing (CMP) is a preferred method of completely planarizing a semiconductor wafer containing equipment in a manufacturing process. The CMP process uses one or more layers of material (e.g., dielectric, aluminum, tungsten, etc.) using frictional contact between the wafer and a movable polishing pad impregnated with the polishing slurry and the chemistry of the slurry itself. , Copper layer, etc.). In the polishing by the CMP process, a region having a higher shape (hill) is removed earlier than a region having a lower shape (valley), so that there is no difference in height and the surface becomes flat. CMP processing is a preferred technique that can flatten features at planarization distances in millimeters, so that the maximum angle after polishing is less than one degree.

The amount of contaminants and polishing by-products increases due to the frictional contact with the surface of the polishing pad of the CMP apparatus, the chemical softening action of the slurry, and the polishing action of the slurry for polishing semiconductor wafers. These contaminants / by-products (eg, polishing pad 102 particles, small amounts of slurry / abrasive, metal ions, etc.) are spread across the surface of the wafer by the CMP process. Upon completion of the CMP, the wafer is removed from the CMP device and is ready for the next stage of the device manufacturing process. However, prior to the next manufacturing process, the wafer must be cleaned to remove contaminants / by-products obtained by CMP. It is very important to remove contaminants remaining in the CMP process before proceeding the wafer to another manufacturing process. For example, the presence of contaminant particles hinders the next lithography process, causing, for example, a broken line or a short circuit.

Referring to FIG. 3, a scrubbing brush 300 used on a semiconductor wafer 310 is shown. FIG. 3 shows the scrubbing brush component of the cleaning assembly according to the present invention. As shown in FIG. 3, as the scrubbing brush 300 rotates, the wafer 310 frictionally rotates (eg, spins) under the scrubbing brush 300, and the scrubbing brush 300 frictionally contacts the entire surface of the wafer 310.

The scrubbing brush 300 has an advantage of effectively removing contaminants that come into direct contact with the scrubbing brush 300 when frictionally moving the surface of the wafer 310. In this specific example, the scrubbing brush 300 is a porous brush impregnated with a specially prepared cleaning fluid. The cleaning fluid is prepared according to the material containing the surface of the wafer 310 (eg, metal surface covered with oxide, tungsten, copper in oxide by plug, etc.). Chemicals contained in the cleaning fluid chemically interact with contaminants on the surface of the wafer 310. As the cleaning fluid reacts with the contaminants, reaction products are produced. The reaction product is a scrubbing brush 30
It is removed from the wafer surface by a zero wiping force and a clean fluid flow.

Referring to FIG. 4, a diagram of a megasonic transducer 400 used on a semiconductor wafer 310 is shown. FIG. 4 shows the megasonic nozzle components of the cleaning assembly according to the present invention. As shown in FIG. 4, the nozzle 401 supplies a cleaning fluid indicated by an arrow 402 to the surface of the wafer 310. Clean fluid is nozzle 4
Upon exiting 10, the cleaning fluid is megasonic agitated by megasonic transducer 400. The megasonic transducer 400 functions by applying high frequency (eg, 2 MHz or higher) high energy vibration to the cleaning fluid 402.
When the cleaning fluid 402 contacts the surface, these high energy vibrations cause
0 is given to the surface. Contaminants are removed from the surface of the wafer 310 by the high energy oscillating force in the cleaning fluid 402.

The main difference between the megasonic and brush components of the present invention is that the surface of wafer 310 is cleaned without direct physical contact with megasonic nozzle 401 or megasonic transducer 400. It is in. When using megasonic components, the power to remove contaminants is a megasonic agitation cleaning fluid 40
2 forces (eg, cavitation, pressure gradients, flow effects, etc.). The pressure gradient provided by megasonic lifts and removes contaminants from the surface of wafer 310. The stream and the large stream of clean fluid carry away the contaminants.

FIG. 5 illustrates a variation of the megasonic component of the present invention that integrates a megasonic transducer and nozzle into a single megasonic nozzle 500. As shown in FIG. 5, megasonic nozzle 500 traverses left and right of wafer 310 as indicated by line 501. Also, the wafer 310 spins below the megasonic nozzle 500 as the megasonic nozzle 500 moves back and forth over its surface. Megasonic nozzle 500 functions in substantially the same manner as megasonic nozzle 401 and megasonic transducer 400 of FIG. However, the megasonic nozzle 500 more easily covers the surface of the wafer 310 using its movement and the spinning operation of the wafer 310.

Referring to FIGS. 6A and 6B, there is shown a side view and a bottom view of a combined megasonic / brush cleaning assembly 600 according to the present invention. As shown in FIGS. 6A and 6B, cleaning assembly 600 shows megasonic and brush components coupled within cleaning assembly 600. The megasonic transducer 602 is arranged coaxially with the brush 601. Brush 601 has arrow 603
Rotate in the direction indicated by. The wafer 310 frictionally rotates under the brush 601.

According to the present invention, the megasonic transducer 602 is coaxially disposed within the brush 601. Megasonic energy is transmitted to the surface of the wafer 310 via the brush 601 and the cleaning fluid. The simultaneous cleaning effect of the brush 601 and the megasonic energy of the megasonic energy of the megasonic transducer 602 has a number of advantages. One such advantage is that the integration of both the brushing and megasonic components is much stronger than rubbing or megasonic fluids alone, making them very effective at removing contaminants. It is. Another advantage is that while utilizing the wiping action of the brush 601, the brush 6
The reason is that the "brush load" does not occur so much with megasonic energy that permeates the 01. The brush load effectively removes all contaminants from the wafer surface because the brush 601 removes a large amount of contaminants from the wafer 310 without using megasonic energy from the megasonic transducer 602. (Eg, trying to clean the wafer with a "dirty" brush).

Another advantage of the cleaning assembly 600 of the present invention is that the action of the brush 601 is combined with the megasonic transducer 602 to obtain high cleaning efficiency, thereby reducing the potential for damage to the surface of the wafer 310 during cleaning. Brush 6 to minimize
It is possible to optimize the pressure of 01 and the energy of the megasonic transducer 602. Due to the high cleaning efficiency, the brush 601 allows the wafer 31
The pressure applied to the zero surface is smaller than when only a brush is used.
As the amount of brush pressure is reduced, the risk of friction damage to the surface of wafer 310 is reduced.

Another advantage of the cleaning assembly 600 according to the present invention is that the single cleaning assembly 60
By combining brush cleaning and megasonic cleaning within 0,
Contrary to the use of one brush cleaning tool and one megasonic cleaning tool separately, the number of cleaning steps is reduced and the required factory floor space is reduced.
The cleaning step and time are reduced by performing simultaneous rubbing and megasonic cleaning, thus increasing wafer throughput. Also, the footprint of the cleaning assembly 600 tool according to the present invention is reduced.

In typical applications, megasonic frequencies above 500 KHz are most effective for post-CMP cleaning. Cleaning efficiency can be optimized by the choice of solution chemistry and flow, frequency and power megasonic processing conditions, brush pressure cleaning processing conditions, rotation speed and time.

Incidentally, various cleaning solutions are applied to the cleaning assembly 600 shown in FIGS. 6A and 6B.
Can be used with The cleaning fluid can be tailored to the chemical structure of the surface of the wafer 310, where a particular chemical is used to produce a particular cleaning effect on the material (eg, dielectric, various types of metals, etc.) on the surface of the wafer 310. Chemicals are contained in the cleaning solution. In addition, normal deionized water can be used as the cleaning fluid.

The disadvantage of performing only the cleaning is that the brush must be in direct contact with the wafer surface to effectively wipe off contaminants. Brushes can damage the wafer surface when subjected to high pressure. In many cases, contaminants adhere to the brush itself, resulting in reduced cleaning efficiency.

The disadvantage of performing only megasonic cleaning is that the power of the megasonic cleaner is less effective than wiping directly with a scrubber, so megasonic cleaning is less popular than scrubbing in post-CMP applications. not high. High energy megasonic cleaning, which uses high energy levels to compensate for low effect cleaning action, can also damage the wafer surface, for example, if cavitation occurs on or very near the wafer surface.

Referring now to FIGS. 7A and 7B, side and bottom views of a combined megasonic / brush cleaning assembly 700 according to another embodiment of the present invention are shown. FIG.
As shown in FIGS. A and 7B, cleaning assembly 700 shows two megasonic components 702 and 703, as well as a brush component 701 integrated within cleaning assembly 700. Megasonic transducers 702 and 703 are arranged parallel to brush 701, as opposed to being coaxial within brush 701. The brush 701 rotates in a direction indicated by an arrow 704. Wafer 310 rotates frictionally under brush 701, as shown in the direction of rotation 705.

A variant of the cleaning assembly 700 according to the invention is shown. The cleaning assembly 700 functions in much the same way as the cleaning assembly 600 of FIGS. 6A and 6B. However, cleaning assembly 700 places the two transducers parallel to the scrubbing brush (eg, brush 701), as opposed to within the scrubbing brush. In this way, megasonic transducers 702 and 703 provide megasonic energy more directly to the surface of wafer 310. In order to make the range uniform, the wafer 310 has a brush 701 and a transducer 702.
And rotate under 703. Like the cleaning assembly 600, the cleaning assembly 700 uses the wiping action of the brush 701 and the megasonic energy of the transducers 702 and 703 to provide a safe, efficient and low footprint post-CMP cleaning.

Referring now to FIG. 8, a flowchart of steps of a process 800 according to one embodiment of the present invention is shown. Process 800 illustrates the steps taken in operating a post-CMP cleaning tool using a cleaning assembly of the present invention (eg, cleaning assembly 600 of FIGS. 6A and 6B). Process 800 illustrates steps from receiving a wafer in a post-CMP clean to sending the wafer to the next step in the manufacturing process.

Process 800 begins at step 801, where a wafer is received for cleaning after the wafer has been processed in a CMP apparatus. As mentioned above, chemical mechanical polishing involves the use of a slurry and frictional contact with a polishing pad. The CMP process creates a large amount of contaminants that need to be removed from the surface of the wafer.

In step 802, a wafer is placed in a cleaning assembly of a post-CMP cleaning tool according to the present invention. Cleaning assembly (eg, cleaning assembly 600)
) Includes a scrubbing brush (eg, brush 601) and a megasonic transducer (eg, megasonic transducer 602).

In step 803, a cleaning fluid is provided on the wafer. As mentioned above, the cleaning fluid may be a special cleaning solution containing various chemicals specially prepared for the chemical composition of the wafer surface, or the cleaning fluid may be ordinary deionized water. Is also good.

At step 804, the surface of the wafer is brush cleaned using a scrubbing brush mounted in a cleaning assembly. As described above, the scrubbing brush uses a clothing action to remove contaminants on the wafer surface.

In step 805, a megasonic cleaning fluid is provided on the wafer using a megasonic nozzle mounted in the cleaning assembly. As described above, the cleaning fluid is megasonic agitated by the megasonic nozzle at a high frequency (eg, 500 kHz or more). Megasonic energy works by removing contaminant particles from the wafer surface.

Referring to FIG. 8, in step 806, contaminants are removed from the surface of the wafer by the combined action of the brush and megasonic nozzle of the cleaning assembly.
As described above, by using the megasonic energy and the wiping action of the brush together, the cleaning can be performed more efficiently than when only one of them is used. Compared to conventional cleaning methods, the high efficiency cleaning action of the cleaning assembly uses less energy at the megasonic nozzle and less pressure applied by the scrubbing brush.

In step 807, the surface of the wafer is rinsed with deionized water. Rinsing
This is for removing the cleaning fluid remaining in the cleaning process.

In step 808, the wafer is dehydrated. After rinsing the cleaning fluid once in step 807, a completely clean wafer with all contaminants removed by centrifugal dewatering is obtained.

In step 809, the completely clean wafer is removed from the cleaning assembly and sent from the post-CMP cleaning tool to the next step in the device manufacturing process.

Accordingly, the present invention provides a method and system for efficiently removing CMP contaminants and by-products from the surface of a wafer after completion of a CMP process. The present invention provides for efficient post-CMP cleaning without risk of damaging the surface of the wafer. The present invention also provides
Effectively cleans and removes contaminants / by-products from the post-CMP wafer surface without damage.

The specific embodiments of the present invention have been described for purposes of illustration and description. They are not exhaustive and do not limit the invention to the precise form disclosed. Of course, many modifications and variations are possible in view of the above teachings. Specific examples have been chosen and described in order to best explain the principles of the invention and its practical application, so those skilled in the art will appreciate that the invention and various modifications thereof together with various modifications to suit the particular use envisioned. Specific examples can be used. The scope of the invention is defined by the appended claims and equivalents.

[Brief description of the drawings]

FIG. 1 shows a bottom view of a typical conventional CMP apparatus.

FIG. 2 shows a side view of a conventional CMP apparatus.

FIG. 3 is a diagram of a scrubbing brush used on a semiconductor wafer, showing components using the brush of the present invention.

FIG. 4 is a diagram of a megasonic transducer used on a semiconductor wafer, showing components using the megasonics of the present invention.

FIG. 5 shows components using the megasonics of the present invention in which the megasonic nozzle and the megasonic transducer are integrated into a single unit and the rotational movement is imparted to the semiconductor wafer.

FIG. 6A is a side view of a combined megasonic / brush cleaning assembly according to one embodiment of the present invention.

FIG. 6B shows a bottom view of the combined megasonic / brush cleaning assembly of FIG. 6A.

FIG. 7A shows a side view of a megasonic / brush cleaning assembly according to another embodiment of the present invention.

FIG. 7B shows a bottom view of the combined megasonic / brush cleaning assembly of FIG. 7A.

FIG. 8 is a flowchart of steps according to one embodiment of the present invention.

──────────────────────────────────────────────────続 き Continuation of front page (81) Designated country EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE ), OA (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG), AP (GH, GM, KE, LS, MW, SD, SL, SZ, TZ, UG, ZW), EA (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR , HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW (72) Inventor Riemin, Tsang Sunnyvale, California, United States of America, Greco, Avenue, Number Bee 214, 1069 (72) Inventor Mirind, G. Welling California, United States, San Jose, Amber Grove, Drive, 1510 F-term (reference) 5F043 AA01 BB27 DD12 DD13 DD16 DD19 EE07 EE40 GG10

Claims (15)

[Claims] 1. A cleaning device for removing contaminants from the surface of a semiconductor wafer, comprising: a megasonic transducer for outputting a megasonic-stirred fluid to remove contaminant particles from the surface of the semiconductor wafer; A brush that contacts and removes contaminant particles therefrom; and a cleaning assembly that attaches the megasonic transducer and brush and that can simultaneously use the megasonic transducer and brush to clean contaminant particles from the surface of the semiconductor wafer. Cleaning device. 2. The method of claim 1, wherein the megasonic transducer is configured to output a megasonic agitated fluid stream in contact with the surface of the semiconductor wafer to remove contaminant particles. apparatus. 3. The apparatus of claim 1, wherein the brush is configured to contact a surface of the wafer and to rub off contaminant particles by a wiping operation. 4. The apparatus of claim 1, wherein the cleaning assembly is configured to move the semiconductor wafer laterally relative to the brush when cleaning the surface of the semiconductor wafer with the brush. . 5. The apparatus is a post-CMP wafer cleaning apparatus for removing post-CMP contaminant particles from a surface of a semiconductor wafer, wherein the brush removes contaminant particles from the surface of the wafer by a wiping operation, and the cleaning assembly comprises a brush for cleaning the semiconductor wafer. The apparatus of claim 1, wherein the apparatus is configured to move the semiconductor wafer laterally relative to the brush when cleaning the surface. 6. The megasonic transducer according to claim 1, wherein the megasonic agitator is coaxially arranged in the brush such that the fluid megasonically flows in contact with the surface of the wafer via the brush. An apparatus according to claim 5. 7. The megasonic transducer according to claim 1, wherein the megasonic agitator is arranged laterally in parallel with the brush so that the megasonic agitated fluid flows in contact with the surface of the semiconductor wafer. An apparatus according to claim 1. 8. The apparatus according to claim 1, wherein the cleaning assembly is configured to spin-dry the semiconductor wafer after cleaning. 9. The device according to claim 1, wherein the fluid is deionized water. 10. The apparatus according to claim 1, wherein the fluid is a cleaning solution adapted to chemically interact with the surface of the semiconductor wafer. 11. A post-CMP cleaning method for a semiconductor wafer, the method comprising: removing contaminant particles from a surface of the semiconductor wafer using a megasonic transducer configured to output a megasonic agitated fluid stream. Removing contaminant particles from the surface of the semiconductor wafer using a brush configured to contact the surface of the semiconductor wafer; and cleaning contaminant particles from the surface of the semiconductor wafer using the megasonic transducer and brush simultaneously. And wherein said cleaning is performed by a cleaning assembly fitted with a megasonic transducer and a brush. 12. The megasonic transducer according to claim 11, wherein the megasonic agitated fluid is coaxially disposed within the brush such that the fluid, which is megasonically stirred, flows in contact with the surface of the wafer via the brush. The method described in. 13. The method of claim 11, further comprising the step of laterally moving the semiconductor wafer with the cleaning assembly relative to the brush as the brush cleans the surface of the semiconductor wafer. 14. The megasonic transducer according to claim 11, wherein the megasonic transducer is arranged laterally in parallel with the brush to flow a megasonic agitated fluid in contact with the surface of the semiconductor wafer. Method. 15. The method of claim 11, further comprising centrifuging the semiconductor wafer after cleaning using a cleaning assembly.