JP2002533950A5 - - Google Patents
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- Publication number
- JP2002533950A5 JP2002533950A5 JP2000591651A JP2000591651A JP2002533950A5 JP 2002533950 A5 JP2002533950 A5 JP 2002533950A5 JP 2000591651 A JP2000591651 A JP 2000591651A JP 2000591651 A JP2000591651 A JP 2000591651A JP 2002533950 A5 JP2002533950 A5 JP 2002533950A5
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- JP
- Japan
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/223,692 US6028286A (en) | 1998-12-30 | 1998-12-30 | Method for igniting a plasma inside a plasma processing reactor |
| US09/223,692 | 1998-12-30 | ||
| PCT/US1999/031076 WO2000039838A2 (en) | 1998-12-30 | 1999-12-28 | Method for igniting a plasma inside a plasma processing reactor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002533950A JP2002533950A (ja) | 2002-10-08 |
| JP2002533950A5 true JP2002533950A5 (US07585860-20090908-C00083.png) | 2007-02-22 |
| JP4615730B2 JP4615730B2 (ja) | 2011-01-19 |
Family
ID=22837613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000591651A Expired - Fee Related JP4615730B2 (ja) | 1998-12-30 | 1999-12-28 | 処理チャンバ内でプラズマを点火するための方法及びプラズマ処理リアクタ |
Country Status (6)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000331993A (ja) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | プラズマ処理装置 |
| US7510664B2 (en) | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| US20080190558A1 (en) * | 2002-04-26 | 2008-08-14 | Accretech Usa, Inc. | Wafer processing apparatus and method |
| US20080017316A1 (en) * | 2002-04-26 | 2008-01-24 | Accretech Usa, Inc. | Clean ignition system for wafer substrate processing |
| US20080011332A1 (en) * | 2002-04-26 | 2008-01-17 | Accretech Usa, Inc. | Method and apparatus for cleaning a wafer substrate |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| US7297892B2 (en) * | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
| US7304263B2 (en) * | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
| JP4896861B2 (ja) * | 2007-12-10 | 2012-03-14 | 株式会社東芝 | 半導体製造方法および半導体製造装置 |
| US20090284421A1 (en) * | 2008-05-16 | 2009-11-19 | Yuri Glukhoy | RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma |
| US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
| WO2022010661A1 (en) * | 2020-07-09 | 2022-01-13 | Lam Research Corporation | Adjustable geometry trim coil |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105597B2 (ja) * | 1982-08-30 | 1994-12-21 | 株式会社日立製作所 | マイクロ波プラズマ源 |
| US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
| FR2555362B1 (fr) * | 1983-11-17 | 1990-04-20 | France Etat | Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma |
| US5053244A (en) * | 1987-02-21 | 1991-10-01 | Leybold Aktiengesellschaft | Process for depositing silicon oxide on a substrate |
| DE3820237C1 (US07585860-20090908-C00083.png) * | 1988-06-14 | 1989-09-14 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | |
| GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
| WO1991010341A1 (en) * | 1990-01-04 | 1991-07-11 | Savas Stephen E | A low frequency inductive rf plasma reactor |
| US5304279A (en) * | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
| US5849136A (en) * | 1991-10-11 | 1998-12-15 | Applied Materials, Inc. | High frequency semiconductor wafer processing apparatus and method |
| US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
| US5468296A (en) * | 1993-12-17 | 1995-11-21 | Lsi Logic Corporation | Apparatus for igniting low pressure inductively coupled plasma |
| JPH07263191A (ja) * | 1994-03-17 | 1995-10-13 | Hitachi Ltd | プラズマ処理装置 |
| JPH0888096A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | プラズマ発生方法 |
| US5512150A (en) * | 1995-03-09 | 1996-04-30 | Hmt Technology Corporation | Target assembly having inner and outer targets |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| JPH10149897A (ja) * | 1996-11-21 | 1998-06-02 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
| JPH10172793A (ja) * | 1996-12-17 | 1998-06-26 | Mitsubishi Heavy Ind Ltd | プラズマ発生装置 |
| US5902563A (en) * | 1997-10-30 | 1999-05-11 | Pl-Limited | RF/VHF plasma diamond growth method and apparatus and materials produced therein |
-
1998
- 1998-12-30 US US09/223,692 patent/US6028286A/en not_active Expired - Lifetime
-
1999
- 1999-11-17 TW TW088120076A patent/TW480900B/zh not_active IP Right Cessation
- 1999-12-28 JP JP2000591651A patent/JP4615730B2/ja not_active Expired - Fee Related
- 1999-12-28 WO PCT/US1999/031076 patent/WO2000039838A2/en active IP Right Grant
- 1999-12-28 KR KR1020017008250A patent/KR100694634B1/ko not_active IP Right Cessation
- 1999-12-28 IL IL14402299A patent/IL144022A0/xx active IP Right Grant
-
2001
- 2001-06-27 IL IL144022A patent/IL144022A/en not_active IP Right Cessation
