JP2002518287A - 最大フラックスピンニングおよび臨界電流を得るための、高−Ｔｃ超伝導体における臨界ドーピング - Google Patents
最大フラックスピンニングおよび臨界電流を得るための、高−Ｔｃ超伝導体における臨界ドーピングInfo
- Publication number
- JP2002518287A JP2002518287A JP2000555283A JP2000555283A JP2002518287A JP 2002518287 A JP2002518287 A JP 2002518287A JP 2000555283 A JP2000555283 A JP 2000555283A JP 2000555283 A JP2000555283 A JP 2000555283A JP 2002518287 A JP2002518287 A JP 2002518287A
- Authority
- JP
- Japan
- Prior art keywords
- htsc
- composition
- hole concentration
- temperature
- adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004907 flux Effects 0.000 title abstract description 11
- 239000002887 superconductor Substances 0.000 title abstract 2
- 238000009987 spinning Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 58
- 230000007704 transition Effects 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 50
- 239000001301 oxygen Substances 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 15
- 229910052746 lanthanum Inorganic materials 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 12
- 229910004247 CaCu Inorganic materials 0.000 claims description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims description 10
- 230000002829 reductive effect Effects 0.000 claims description 10
- 229910052765 Lutetium Inorganic materials 0.000 claims description 9
- 230000036961 partial effect Effects 0.000 claims description 9
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- 229910052772 Samarium Inorganic materials 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910002480 Cu-O Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 claims description 3
- 239000013590 bulk material Substances 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims 7
- 229910052689 Holmium Inorganic materials 0.000 claims 7
- 229910052771 Terbium Inorganic materials 0.000 claims 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims 6
- 229910052691 Erbium Inorganic materials 0.000 claims 5
- 229910052775 Thulium Inorganic materials 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 239000010949 copper Substances 0.000 description 49
- 238000006467 substitution reaction Methods 0.000 description 17
- 229910052761 rare earth metal Inorganic materials 0.000 description 16
- 229910052716 thallium Inorganic materials 0.000 description 9
- 150000001768 cations Chemical group 0.000 description 8
- 230000002427 irreversible effect Effects 0.000 description 8
- 229910052747 lanthanoid Inorganic materials 0.000 description 8
- 150000002602 lanthanoids Chemical class 0.000 description 8
- 238000006213 oxygenation reaction Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 206010021143 Hypoxia Diseases 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
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- 230000005494 condensation Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
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- 230000009467 reduction Effects 0.000 description 3
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- 238000003841 Raman measurement Methods 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000020401 Depressive disease Diseases 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 composition Hg-1212 Chemical compound 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000001683 neutron diffraction Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NZ33072898 | 1998-06-18 | ||
| NZ330728 | 1998-06-18 | ||
| NZ333971 | 1999-01-29 | ||
| NZ33397199 | 1999-01-29 | ||
| PCT/NZ1999/000095 WO1999066541A2 (fr) | 1998-06-18 | 1999-06-18 | Dopage critique des supraconducteurs a temperature critique elevee pour un laminage de flux et des courants critiques maximaux |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002518287A true JP2002518287A (ja) | 2002-06-25 |
| JP2002518287A5 JP2002518287A5 (fr) | 2006-08-10 |
Family
ID=26651922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000555283A Pending JP2002518287A (ja) | 1998-06-18 | 1999-06-18 | 最大フラックスピンニングおよび臨界電流を得るための、高−Ｔｃ超伝導体における臨界ドーピング |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1090398A4 (fr) |
| JP (1) | JP2002518287A (fr) |
| AU (1) | AU4806499A (fr) |
| WO (1) | WO1999066541A2 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1006594A1 (fr) * | 1998-12-03 | 2000-06-07 | Jochen Dieter Prof. Dr. Mannhart | Supraconducteur à densité de courant amélioré et procédé de sa fabrication |
| EP2319082B1 (fr) * | 2008-08-29 | 2017-11-15 | LG Chem, Ltd. | Nouveau composé semi-conducteur et son procédé de fabrication, pile solaire et élément de conversion thermoélectrique l utilisant |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006222A1 (fr) * | 1987-12-30 | 1989-07-13 | Unisearch Limited | Procede ameliore de production de supraconducteurs en ceramique |
| JPH04114920A (ja) * | 1990-08-28 | 1992-04-15 | Ind Technol Res Inst | 超伝導金属酸化物Ｔｌ―Ｐｂ，Ｌｎ―Ｓｒ―Ｃｕ―Ｏ組成物 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993020591A1 (fr) * | 1992-04-03 | 1993-10-14 | Jeffery Lewis Tallon | Representation de la puissance thermique de cuprates supraconducteurs |
| US5919735A (en) * | 1994-11-04 | 1999-07-06 | Agency Of Industrial Science And Technology | High temperature superconductor |
-
1999
- 1999-06-18 EP EP99931620A patent/EP1090398A4/fr not_active Withdrawn
- 1999-06-18 JP JP2000555283A patent/JP2002518287A/ja active Pending
- 1999-06-18 WO PCT/NZ1999/000095 patent/WO1999066541A2/fr active Application Filing
- 1999-06-18 AU AU48064/99A patent/AU4806499A/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006222A1 (fr) * | 1987-12-30 | 1989-07-13 | Unisearch Limited | Procede ameliore de production de supraconducteurs en ceramique |
| JPH04114920A (ja) * | 1990-08-28 | 1992-04-15 | Ind Technol Res Inst | 超伝導金属酸化物Ｔｌ―Ｐｂ，Ｌｎ―Ｓｒ―Ｃｕ―Ｏ組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1090398A2 (fr) | 2001-04-11 |
| EP1090398A4 (fr) | 2007-05-02 |
| WO1999066541A3 (fr) | 2000-04-20 |
| WO1999066541A2 (fr) | 1999-12-23 |
| AU4806499A (en) | 2000-01-05 |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060616 |
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| A621 | Written request for application examination |
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| A131 | Notification of reasons for refusal |
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