JP2002374017A - Spin-valve type thin-film magnetic element and thin-film magnetic head using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spin-valve type thin-film magnetic element that maintains the symmetry of a output voltage, while the magnetization state of a fixed magnetic layer is stabilized thermally, and can obtain an output voltage waveform that can be processed digitally easily, and to provide a thin-film magnetic head using the spin-valve type thin-film magnetic element. SOLUTION: A fixed magnetic layer P is formed by a three-layer structure where a first fixed magnetic layer 12, a non-magnetic layer 13, and a second fixed magnetic layer 14 are laminated from the side of an antiferromagnetic layer 11 sequentially. A ferromagnetic state is formed. In the ferromagnetic state, the first and second fixed magnetic layers 12 and 14 are connected magnetically via the non-magnetic layer 13. In this case, specific resistance in the first fixed magnetic layer 12 is set higher than that of the second fixed magnetic layer 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a free magnetic layer in which the direction of magnetization is rotated by an external magnetic field, and a fixed magnetic layer in which the direction of magnetization is fixed. The present invention relates to a variable spin-valve thin-film magnetic element and a thin-film magnetic head using the same.

[0002]

2. Description of the Related Art A conventional spin-valve thin-film magnetic element shown in FIG. 9 comprises an underlayer 70, an antiferromagnetic layer 71, a fixed magnetic layer P7, a nonmagnetic conductive layer 75, a free magnetic layer F7,
The fixed magnetic layer P7 includes a laminated body C7 in which a protective layer 79 is sequentially laminated, and the fixed magnetic layer P7 includes Co, a CoNi alloy, a CoFe alloy,
The antiferromagnetic layer 71 is made of a ferromagnetic material such as an FeNi alloy.
The direction of magnetization is fixed by the exchange anisotropic magnetic field generated at the interface with.

On both sides of the laminate C7, a hard bias layer 81 and an electrode layer 8 formed on the hard bias layer 81 are formed.
0 is provided. A sense current is applied to the laminate C7 from the electrode layer 80, and the center of the sense current substantially coincides with the center of the nonmagnetic conductive layer 75 having the highest conductivity.

When the free magnetic layer F7 detects an external magnetic field (H), the direction of magnetization of the free magnetic layer F7 rotates so as to be almost parallel to the direction of the external magnetic field (H). A GMR (Giant Matrix) in which the mean free path of conduction electrons of the sense current changes depending on the direction of magnetization of the free magnetic layer F7.
A gnetoresistive effect is generated, and an output voltage (V) between the electrode layers 80 is generated from a change in resistance (ΔR) due to the GMR effect between the electrode layers 80, so that an external magnetic field (H) can be detected.

[0005]

In order to thermally stabilize the magnetization state of the fixed layer P7, the fixed magnetic layer P7
Has a three-layer structure in which a first fixed magnetic layer made of a ferromagnetic material, a nonmagnetic layer made of a nonmagnetic material, and a second fixed magnetic layer made of a ferromagnetic material are sequentially stacked from the antiferromagnetic layer 71 side. It has been proposed that the first and second pinned magnetic layers be in an artificial ferrimagnetic state in which the first and second pinned magnetic layers are magnetically coupled via a nonmagnetic layer.

However, in the pinned magnetic layer P7 having such a three-layer structure, since the entire film thickness increases and the electric resistance decreases, the center of the sense current is shifted from the center of the nonmagnetic conductive layer 75 to the pinned layer P7 side. Tended to shift. When the sense current center shifts to the fixed layer P7 side, the sense current center moves away from the free magnetic layer F7, and the free magnetic layer F7 is more affected by a magnetic field (sense current magnetic field) generated by the sense current magnetic field. .

When the effect of the sense current magnetic field is large,
As shown in FIG. 10, when the external magnetic field (H) is applied in the direction of −z (the direction of the sense current magnetic field), the electric resistance (R) becomes linear as the magnitude of the external magnetic field (H) increases. When the external magnetic field (H) becomes equal to or more than a certain value (Hs2), the electric resistance (R) becomes a certain value (R4). Further, when the external magnetic field (H) is applied in the direction of + z (anti-parallel to the direction of the sense current magnetic field), the electric resistance (R) increases linearly with an increase in the magnitude of the external magnetic field (H). ,
When the external magnetic field (H) becomes equal to or more than a certain value (Hs1), the electric resistance (R) becomes a certain value (R3).

At this time, the constant value (Hs2) of the external magnetic field parallel to the direction of the sense current magnetic field is larger than the constant value (Hs1) of the external magnetic field antiparallel to the direction of the sense current magnetic field due to the influence of the sense current magnetic field. The electric resistance (R4) corresponding to a constant value (Hs2) of the external magnetic field which is small and parallel to the direction of the sense current magnetic field is different from the electric resistance (R0) when there is no external magnetic field (H = 0). It is smaller than the electric resistance (R3) corresponding to the constant value (Hs1) of the external magnetic field antiparallel to the direction of the current magnetic field.

Therefore, external magnetic fields (H) having the same magnitude (absolute value) are applied in the direction of -z (direction of the sense current magnetic field) and in the direction of + z (anti-parallel to the direction of the sense current magnetic field). At this time, the electric resistance (R) changes more greatly with respect to the external magnetic field (H) applied in the direction of + z (anti-parallel to the direction of the sense current magnetic field).

In the relationship between the external magnetic field (H) and the electric resistance (R), the output voltage waveform has asymmetry (Asymmetr
y-Plus), which is not preferable for digital signal processing. Even when the sense current magnetic field is in the + z direction, the relationship between the external magnetic field (H) and the electric resistance (R) is as shown in FIG.
As shown in the figure, the asymmetry (Asymmetr
y-Minus). Such an asymmetric output voltage waveform has a problem in that digital signal processing is difficult. The present invention, in a state where the magnetization state of the fixed magnetic layer is thermally stabilized,
It is an object of the present invention to provide a spin-valve thin-film magnetic element capable of obtaining an output voltage waveform that facilitates digital signal processing while maintaining the symmetry of the output voltage, and a thin-film magnetic head using the same.

[0011]

According to the present invention, there is provided a spin-valve thin-film magnetic element comprising: an antiferromagnetic layer; a fixed magnetic layer stacked in contact with the antiferromagnetic layer; A laminate having a free magnetic layer opposed via a conductive layer,
A pair of electrode layers provided on both sides of the laminate, wherein the fixed magnetic layer is formed by contacting the first fixed magnetic layer made of a ferromagnetic material with the antiferromagnetic layer, Fixed magnetic layer,
Non-magnetic layer made of non-magnetic material, second made of ferromagnetic material
And the first fixed magnetic layer has a higher specific resistance than the second fixed magnetic layer,
The magnetization state of the fixed magnetic layer has its magnetization direction aligned and fixed by magnetic coupling with the antiferromagnetic layer, and the first and second fixed magnetic layers sandwich the nonmagnetic layer. , Forming an artificial ferrimagnetic state. In such a spin-valve thin-film magnetic element, the magnetization state of the fixed magnetic layer in the ferrimagnetic state is thermally stable, and the sense current is distributed to the first fixed magnetic layer having a high specific resistance. Since it is difficult to flow, the center of the sense current does not shift to the first fixed magnetic layer side. Therefore, the center of the sense current substantially coincides with the center of the nonmagnetic conductive layer, and the free magnetic layer has
The effect of the magnetic field generated by the sense current is relatively small, and G
The magnitude of the resistance change due to the MR effect is substantially equal when the direction of the external magnetic field is parallel and antiparallel to the direction of the sense current magnetic field in the free magnetic layer, and the output voltage between the electrode layers becomes symmetric. In addition, the digital signal processing of the output voltage waveform is facilitated.

Further, since it is difficult for the sense current to shunt to the first pinned magnetic layer, the sense current flows more to the free magnetic layer, the non-magnetic conductive layer, and the second pinned magnetic layer which contribute to the GMR effect. Since the rate of change in resistance due to the effect is improved, the rate of change in resistance between the electrodes due to the GMR effect is improved, and a highly reliable external magnetic field can be detected.

The spin-valve thin-film magnetic element of the present invention comprises:
The first pinned magnetic layer is made of a Co-based amorphous alloy, and the second pinned magnetic layer is made of crystalline Co or C
It is made of an o-based alloy. In such a spin-valve thin-film magnetic element, since both the first fixed magnetic layer and the second fixed magnetic layer are made of a Co-based material, they are easily magnetically coupled, and the fixed magnetic layer is more stable. Since the first fixed magnetic layer can be in the magnetic state and the first fixed magnetic layer is in the amorphous state, the specific resistance can be increased.

The spin-valve thin-film magnetic element of the present invention comprises:
A laminate having an antiferromagnetic layer, a fixed magnetic layer laminated in contact with the antiferromagnetic layer, and a free magnetic layer opposed to the fixed magnetic layer via a nonmagnetic conductive layer; A pair of electrode layers provided on both sides of the fixed magnetic layer,
A first pinned magnetic layer made of a ferromagnetic material is brought into contact with the antiferromagnetic layer, and the first pinned magnetic layer, a nonmagnetic layer made of a nonmagnetic material, and a second pinned magnetic layer made of a ferromagnetic material Are sequentially laminated, the first fixed magnetic layer has a first layer having a higher specific resistance than the second fixed magnetic layer, and the second fixed magnetic layer has
And a second layer made of the same material as the pinned magnetic layer, wherein the first layer is formed in contact with the antiferromagnetic layer, and the second layer is formed in contact with the nonmagnetic layer. Being
The magnetization state of the first fixed magnetic layer is aligned and fixed by the magnetic coupling with the antiferromagnetic layer, and the first and second fixed magnetic layers are fixed to the nonmagnetic layer. To form an artificial ferrimagnetic state. In such a spin-valve thin-film magnetic element, since the second layer at the interface between the first fixed magnetic layer and the nonmagnetic layer is made of the same material as the second fixed magnetic layer, The second pinned magnetic layer is magnetically easily coupled in an antiparallel state, the magnetization state of the pinned magnetic layer in an artificial ferrimagnetic state is thermally stable, and the first pinned magnetic layer is Has a first layer having a high specific resistance, it is difficult for the sense current to shunt to the first fixed magnetic layer, and the sense current center does not shift to the first fixed magnetic layer side, and Almost coincide with the center. Therefore, in the free magnetic layer,
The effect of the magnetic field generated by the sense current is relatively small, and G
The magnitude of the resistance change due to the MR effect is substantially equal when the direction of the external magnetic field is parallel and antiparallel to the direction of the sense current magnetic field in the free magnetic layer, and the output voltage between the electrode layers becomes symmetric. This facilitates digital signal processing of the output voltage waveform.

Further, since it is difficult for the sense current to shunt to the first pinned magnetic layer, the sense current to the free magnetic layer, the non-magnetic conductive layer, and the second pinned magnetic layer which contributes to the GMR effect can be secured. The rate of change in resistance due to the GMR effect is improved, and a highly reliable external magnetic field can be detected.

The spin-valve thin-film magnetic element of the present invention comprises:
The first layer of the first pinned magnetic layer is made of a Co-based amorphous alloy, and the second layer and the second pinned magnetic layer of the first pinned magnetic layer are made of crystalline Co or Co. It is a system alloy. In such a spin-valve thin-film magnetic element, the second layer of the first pinned magnetic layer and the second pinned magnetic layer
Since both are Co-based materials, the pinned magnetic layer can be brought into a more stable artificial ferrimagnetic state.
Since the first layer of the first pinned magnetic layer is in an amorphous state,
The specific resistance can be increased.

The spin-valve thin-film magnetic element of the present invention comprises:
The specific resistance of the Co-based amorphous alloy is 100 μΩ · c
m or more. In such a spin-valve thin-film magnetic element, the shunt of the sense current to the first fixed magnetic layer can be reliably suppressed.

The spin-valve thin-film magnetic element of the present invention comprises:
The Co-based amorphous alloy is Co-Zr, Co-H
f, Co-Ti, Co-Nb, Co-Ta, Co-T-
Z, Co-T-Z-B, where T is Nb, M
o, W, Ta, and Z are 1 selected from Zr, Hf, and Ti.
Or two or more elements, and the Co-based alloy is C
oNi alloy, CoFe alloy, or CoFeNi alloy. In such a spin-valve thin-film magnetic element, the antiparallel magnetic coupling between the first and second fixed magnetic layers is strong, so that the magnetization state of the fixed magnetic layer can be formed more stably.

The spin-valve thin-film magnetic element of the present invention comprises:
The Co-based amorphous alloy contains 70 atomic% or more of Co, and the Co-based alloy contains 50 atomic% or more of Co. In such a spin-valve thin-film magnetic element, the antiparallel magnetic coupling between the first and second fixed magnetic layers is strong, so that the magnetization state of the fixed magnetic layer can be formed more stably.

The spin-valve thin-film magnetic element of the present invention comprises:
The non-magnetic layer is made of Ru, Rh, Ir, Cr, Re, Cu
Is one of In such a spin-valve thin-film magnetic element, since the antiparallel magnetic coupling between the first and second fixed magnetic layers via the nonmagnetic layer is strong, the magnetization state of the fixed magnetic layer can be more stably formed. can do.

The spin-valve thin-film magnetic element of the present invention comprises:
A sense current is applied to the laminate from the pair of electrode layers, and a direction of a magnetic field generated by the sense current is:
The position of the first pinned magnetic layer coincides with the direction of magnetization of the first pinned magnetic layer. In such a spin-valve thin-film magnetic element, the magnetization state of the fixed magnetic layer can be further stabilized by the magnetic field generated by the sense current.

The spin-valve thin-film magnetic element of the present invention comprises:
The antiferromagnetic layer is made of an alloy containing the elements X and Mn, and the element X is one or more of Pt, Pd, Ir, Rh, Ru, and Os. The spin-valve thin-film element according to claim 1. In such a spin-valve thin-film magnetic element, the magnetic coupling (exchange anisotropic magnetic field) between the antiferromagnetic layer and the fixed magnetic layer is large, the corrosion resistance is excellent, and the blocking temperature is high. Even when the temperature rises, the magnetization direction of the fixed magnetic layer does not change, and a highly reliable spin-valve thin-film magnetic element can be obtained.

The spin-valve thin-film magnetic element of the present invention comprises:
The interface structure between the antiferromagnetic layer and the pinned magnetic layer is in a crystallographic mismatch state. In such a spin-valve thin-film magnetic element, the magnetic coupling (exchange anisotropic magnetic field) between the antiferromagnetic layer and the fixed magnetic layer is further increased, so that the magnetization of the fixed magnetic layer does not change and the reliability is improved. It is possible to obtain a spin valve type thin-film magnetic element having an even higher level.

The spin-valve thin-film magnetic element of the present invention comprises:
The antiferromagnetic layer is made of an X-Mn-X 'alloy;
Is one or more of Pt, Pd, Ir, Rh, Ru, and Os, and X ′ is Ne, A
r, Kr, Xe, Be, B, C, Fe, Co, Ni, C
u, Zn, Ga, Ge, Zr, Nb, Mo, Ag, C
one or more of d, Sn, Hf, Ta, W, Re, Au, Pb, and a rare earth element;
Whether the element X ′ has penetrated into the space of the spatial lattice, X-Mn
A part of the crystal lattice is replaced by the element X ′. In such a spin-valve thin-film magnetic element, the interface structure between the antiferromagnetic layer and the fixed magnetic layer can be surely brought into a non-matching state.

The spin-valve thin-film magnetic element of the present invention comprises:
The specific resistance of the antiferromagnetic layer is 200 μΩ · cm or more, and the thickness of the antiferromagnetic layer is 8 to 15 nm. In such a spin-valve thin-film magnetic element, the shunt of the sense current to the antiferromagnetic layer can also be suppressed.

The spin-valve thin-film magnetic element of the present invention comprises:
The antiferromagnetic layer is formed directly on the insulating layer. In such a spin-valve thin-film magnetic element, since there is no conductive layer between the antiferromagnetic layer and the insulating layer, the sense current does not shunt to a layer further outside the antiferromagnetic layer.

In the thin-film magnetic head according to the present invention, the spin-valve magnetic element described above is provided between a pair of shield layers made of a soft magnetic material. In such a thin-film magnetic head, a magnetic field other than the shield layer is absorbed by the shield layer, and the spin-valve thin-film magnetic element can detect only a magnetic field from the medium that appears between the shield layers. The output voltage of the spin-valve thin-film magnetic element is symmetric with respect to the output voltage in the absence of the magnetic field, depending on the direction of the magnetic field from the medium toward the thin-film magnetic head and the opposite direction. If the output voltage waveform is symmetric, digital signal processing is easy, so that a reading error hardly occurs and a highly reliable thin film magnetic head can be obtained.

[0028]

FIG. 1 is an explanatory view showing a slider on which a thin-film magnetic head of the present invention is formed, FIG. 2 is a schematic view of an example of a thin-film magnetic head of the present invention, and FIG. FIG. 4 is a sectional view of a main part of an example of a thin-film magnetic head. FIG. 4 is an explanatory view of a first embodiment of a spin-valve thin-film magnetic element of the present invention.
FIG. 5 is an explanatory view of a second embodiment of the spin-valve thin-film magnetic element of the present invention, FIGS. 6 and 7 are explanatory views of the GMR effect, and FIG. 4 is a graph schematically showing the external magnetic field dependence of resistance.

FIG. 4 shows a spin-valve thin-film magnetic element according to a first embodiment of the present invention. This spin-valve thin-film magnetic element has an insulating layer 4 made of alumina, SiO2 or the like.
Above, the base layer 22 made of a conductive material such as Ta, an antiferromagnetic layer 11, a pinned magnetic layer P, the non-magnetic conductive layer 15, a multilayer body C which free magnetic layer F, the protective layer 19 are sequentially stacked, laminated On both sides of the body C, a hard bias layer 21 and an electrode layer 20 formed on the hard bias layer 21 are provided.

The antiferromagnetic layer 11 has a role of fixing the direction of magnetization of the fixed magnetic layer P by an exchange anisotropic magnetic field generated at the interface with the fixed magnetic layer P. Is one or more of Pt, Pd, Ir, Rh, Ru, and Os), and has a thickness of 8 to 2
About 0 nm, the composition of the element X is 37 to 63 atomic%, more preferably 44 to 57 atomic%.

Such an antiferromagnetic layer 11 is excellent in corrosion resistance and has a strong exchange anisotropic magnetic field generated at the interface with the fixed magnetic layer P, so that the magnetization direction of the fixed magnetic layer P can be more reliably determined. Can be fixed. Further, the blocking temperature is high, and the exchange anisotropic magnetic field does not disappear up to a high temperature.

Among the X-Mn alloys, the Pt-Mn alloy is particularly excellent in corrosion resistance, has a particularly high blocking temperature of 380 ° C., and has an exchange anisotropic magnetic field of 6.4 × 10 ⁴ (A / m).
Beyond. When the antiferromagnetic layer 11 is made of a Pt—Mn alloy, it is necessary to form a thermal diffusion layer at the interface between the antiferromagnetic layer 11 and the pinned magnetic layer P.

The antiferromagnetic layer 11 and the pinned magnetic layer P
In the manufacturing process of the spin-valve type thin film element, the heat diffusion layer at the interface with the base layer is formed by the underlayer 22, the antiferromagnetic layer 11, the fixed magnetic layer P, the nonmagnetic conductive layer 15, the free magnetic layer F, and the protective layer 19.
Is formed by a heat treatment step in a magnetic field after forming a film by sputtering.

The antiferromagnetic layer 11 is made of X-Mn-X '.
Alloys (where X 'is Ne, Ar, Kr, Xe, B
e, B, C, N, Mg, Al, Si, P, Ti, V, C
r, Fe, Co, Ni, Cu, Zn, Ga, Ge, Z
r, Nb, Mo, Ag, Cd, Sn, Hf, Ta, W,
One or two of Re, Au, Pd, and rare earth elements
Or more kinds of elements).

The X-Mn-X 'alloy is an interstitial solid solution in which the element X' has penetrated, or a part of the lattice points of the crystal lattice composed of the element X and Mn is substituted by the element X '. It is preferably a substituted type solid solution. As a result, the lattice constant of the antiferromagnetic layer 11 can be increased, and at the interface between the antiferromagnetic layer 11 and the pinned magnetic layer P,
An atomic arrangement (non-matching state) in which the atomic arrangement of the antiferromagnetic layer 11 and the pinned magnetic layer P does not correspond one-to-one can be formed.

As described above, the antiferromagnetic layer 11 is made of X-Mn.
−X ′, the antiferromagnetic layer 11 and the first pinned magnetic layer 14
If the atomic arrangement at the interface with the interface is in a mismatched state, the exchange coupling magnetic field between the antiferromagnetic layer 11 and the fixed magnetic layer P can be further strengthened.

The pinned magnetic layer P has a three-layer structure in which a nonmagnetic layer 13 and a second pinned magnetic layer 14 are laminated in order from the first pinned magnetic layer 12 formed in contact with the antiferromagnetic layer 11. It is.

The first fixed magnetic layer 12 is made of a Co-based amorphous ferromagnetic material and has a specific resistance of 100 μΩ · cm.
That is all. The first pinned magnetic layer 12 has a Co content of 70 atomic% or more, and has a binary system of Co-Z
r, Co-Hf, Co-TiCo-Nb, Co-Ta,
Co-T-Z as a ternary system, Co-TZB as a quaternary system (where T is Mo, W, N
b, one or more elements of Ta, Z is Z
or one or more of r, Hf, and Ti). The thickness of the first pinned magnetic layer 12 is preferably 1 to 5 nm.

The nonmagnetic layer 13 is made of Ru, Rh, Ir, C
It is preferably made of a nonmagnetic conductive material such as r, Re, and Cu, and has a thickness of 0.7 to 1.0 nm.

The second pinned magnetic layer 14 is made of crystalline C
It is made of an o-based ferromagnetic material and has a Co content of 50 atomic%.
That is all. The crystalline Co-based ferromagnetic material is C
o, a CoNi alloy, a CoFe alloy, a CoFeNi alloy, or the like can be used. Such a second pinned magnetic layer 1
The specific resistance of No. 4 is about 15 to 30 μΩ · cm. Second
The thickness of the fixed magnetic layer 14 is larger than the thickness of the first fixed magnetic layer 12, and is preferably 3 to 7 nm. First
The ratio of the thickness of the fixed magnetic layer 12 to the thickness of the second fixed magnetic layer 14 is 0.33 to 0.95, more preferably,
0.53 to 0.95.

The first pinned magnetic layer 12 includes the antiferromagnetic layer 11
The direction of magnetization is fixed by the exchange magnetic anisotropic magnetic field generated at the interface with. The second pinned magnetic layer 14 is magnetically coupled to the first pinned magnetic layer 12 via the non-magnetic layer 13, and the direction of magnetization of the second pinned magnetic layer 14 is the first pinned magnetic layer. It is fixed antiparallel to the direction of magnetization of the layer 12.

As described above, the first and second pinned magnetic layers 1
2 and 14, the magnetization directions are antiparallel to each other, and the magnetic moment per unit area of the second pinned magnetic layer 14 is
An artificial ferrimagnetic state larger than the first pinned magnetic layer 12 is formed. As shown in FIG. 4, the direction of magnetization of the first pinned magnetic layer 12 is defined as + z direction, and the direction of magnetization of the second fixed magnetic layer 14 is defined as -z direction.

The direction of magnetization of the fixed magnetic layer P is fixed by a strong exchange anisotropic magnetic field with the antiferromagnetic layer 11, and does not change even by an external magnetic field or a high environmental temperature.
Further, since the fixed magnetic layer P is in an artificial ferrimagnetic state, the magnetization state of the fixed magnetic layer P is more thermally stable and the direction of magnetization does not change. The ferrimagnetic state of the fixed magnetic layer P depends on the first and second fixed magnetic layers 12 and 14.
Are both Co-based materials, and the first pinned magnetic layer 12
Contains 70 atomic% or more of Co, and the second pinned magnetic layer 14 contains 50 atomic% or more of Co, so that a stable ferrimagnetic state can be formed.

The first and second pinned magnetic layers 12 and 14
Forms the ferrimagnetic state, the second pinned magnetic layer 1
4 may be thinner than the thickness of the first fixed magnetic layer 12. At this time, the thickness of the first pinned magnetic layer 12 is 3
The thickness of the second pinned magnetic layer 14 is preferably smaller than that of the first pinned magnetic layer.
Preferably, the ratio of the thickness of the first fixed magnetic layer 12 to the thickness of the second fixed magnetic layer 14 is 1.05 nm.
To 3, more preferably 1.05 to 1.8.

The magnetization state of the fixed magnetic layer P is determined by the magnitude and direction of the applied magnetic field in the magnetic field heat treatment step of forming a thermal diffusion layer at the interface between the antiferromagnetic layer 11 and the fixed magnetic layer P. .

In the heat treatment in a magnetic field, the first fixed magnetic layer 12 is magnetized in the direction of the applied magnetic field, and the direction of the magnetization is fixed by the exchange anisotropic magnetic field with the antiferromagnetic layer 11.
At this time, the second pinned magnetic layer 14 is magnetically coupled to the first pinned magnetic layer 12 via the non-magnetic layer 13, and is magnetized in an antiparallel state with the first pinned magnetic layer 12. The direction of magnetization of the second pinned magnetic layer 14 is fixed antiparallel to the direction of magnetization of the first pinned magnetic layer 12.

The nonmagnetic conductive layer 15 is made of a good conductive material such as Cu and is sandwiched between the fixed magnetic layer P and the free magnetic layer F to magnetically separate the fixed magnetic layer P and the free magnetic layer F. The role of causing the spin-dependent scattering of conduction electrons at the interface with the pinned magnetic layer P and the interface with the free magnetic layer F to exhibit the GMR effect, and the role as the main path of the sense current. And the film thickness is 1.5 ~
It is formed to 4 nm.

The free magnetic layer F has a two-layer structure in which a diffusion preventing layer 17 and a soft magnetic layer 18 are sequentially laminated on the nonmagnetic conductive layer 15 and has a thickness of 3 to 8 nm.

The soft magnetic layer 18 is made of a NiFe alloy,
When the Fe content is between 0.1 atomic% and 0.3 atomic%, in particular, excellent soft magnetic characteristics with low saturation magnetization and low coercive force and optimum magnetostriction characteristics can be obtained.

The diffusion prevention layer 17 is made of a Co or CoFe alloy, and prevents Ni atoms of the soft magnetic layer 18 from interdiffusing into the nonmagnetic conductive layer 15 and needs to have a thickness of 0.5 nm or more. .

The magnetization of the free magnetic layer F is rotated by the external magnetic field (H). The rotation of the magnetization of the free magnetic layer F is led by the soft magnetic layer 18, and the magnetization of the diffusion prevention layer 17 rotates following the magnetization of the soft magnetic layer 18, and the magnetization direction of the diffusion prevention layer 17 is The directions of magnetization of the soft magnetic layer 18 match. The diffusion prevention layer 17 has a large coercive force of Co, and if it is too thick, it will hinder the magnetization rotation of the free magnetic layer F.
Preferably, the thickness is about 1 nm.

On the free magnetic layer F, a protective layer 19 made of Ta, Cr or the like is formed. A hard bias layer 21 is provided on both sides of a laminate C in which an underlayer 22, an antiferromagnetic layer 11, a fixed magnetic layer P, a nonmagnetic conductive layer 15, a free magnetic layer F, and a protective layer 19 are sequentially laminated. The hard bias layer 21 is formed of a permanent magnet material having a high coercive force, for example, a Co-Pt alloy, Co-Cr-
It is made of a Pt alloy, a Co-Cr-Ta alloy or the like.

The hard bias layer 21 includes the free magnetic layer F
And a function of applying a bias magnetic field in a direction (x direction shown in FIG. 4) perpendicular to the magnetization direction (z direction) of the fixed magnetic layer P. Since the magnetic anisotropy dispersion is suppressed, the free magnetic layer F is aligned in the x direction by the bias magnetic field applied in the x direction when there is no external magnetic field. Since the hard bias layers 21 are provided on both sides of the free magnetic layer F, a bias magnetic field can be efficiently applied to the free magnetic layer F.

The electrode layer 20 is made of Cr, Au, Ta, W, R
It is formed as a single layer film or a multilayer film made of one or more selected from h and Ir, and is formed on the hard bias layer 21 on both sides of the laminate C.

A sense current is applied to the laminate C from the electrode layers 20 on both sides in a direction (x direction) orthogonal to the magnetization direction of the fixed magnetic layer P. The direction in which the sense current is applied (+ x direction shown in FIG. 4) is such that the direction of the magnetic field (sense current magnetic field) generated by the sense current is the position of the first fixed magnetic layer 12 and the first fixed magnetic layer. Twelve magnetization directions coincide with each other. Due to such a sense current magnetic field, the magnetization state of the fixed magnetic layer P is more thermally stable.

The sense current hardly flows into the first fixed magnetic layer 12 because the specific resistance of the first fixed magnetic layer 12 is 100 μΩ · cm or more, It flows through the second fixed magnetic layer 14 and the free magnetic layer F among the nonmagnetic conductive layer 15 and the fixed magnetic layer P having low electric resistance. Such a sense current center corresponds to the nonmagnetic conductive layer 1
5, almost coincides with the center.

At the position of the free magnetic layer F, a sense current magnetic field is applied in the −z direction. However, the center of the sense current is substantially aligned with the center of the nonmagnetic conductive layer 15 without shifting to the fixed magnetic layer P side. Since it is close to the free magnetic layer F,
The influence of the sense current magnetic field in the z direction is relatively small on the free magnetic layer F.

Next, a case where the spin-valve thin-film magnetic element of the first embodiment detects an external magnetic field will be described.
When an external magnetic field is applied to the spin-valve thin-film magnetic element, the direction of magnetization of the free magnetic layer F rotates so as to approach parallel to the direction of the external magnetic field.

At this time, since the sense current magnetic field in the free magnetic layer F is smaller than the external magnetic field, the free magnetic layer F
Can detect only the external magnetic field.

In the free magnetic layer F, the direction of magnetization is aligned by the bias magnetic field, and when the direction of magnetization is rotated, the magnetic domain is not disturbed, so that no Barkhausen noise is generated.

The soft magnetic layer 18 of the free magnetic layer F is
Since NiFe alloy has excellent soft magnetic properties and low coercive force,
The magnetization of the free magnetic layer F can rotate in response to a change in the external magnetic field.

When the magnetization of the free magnetic layer F rotates, GM
Laminate C by R (Giant Magnetoresistive) effect
The electric resistance value (R) between the electrode layers 20 sandwiching the. Hereinafter, the GMR effect will be described.

The GMR effect is that the conduction electrons of the sense current are
This is due to spin-dependent scattering at the interface between the nonmagnetic conductive layer 15 and the free magnetic layer F and at the interface between the nonmagnetic conductive layer 15 and the pinned magnetic layer P, where the probability of scattering depends on the direction of spin.

As shown in FIG. 6, the direction of the external magnetic field is -z
When the direction of the magnetization of the free magnetic layer F is parallel to the direction of the magnetization of the second pinned magnetic layer 14 (hereinafter, pinned magnetization), the conduction electrons of the sense current
5 when entering the interface with the free magnetic layer F from the
The spin has a high probability of being scattered, and the up spin has a low probability of being scattered. (Spin-dependent scattering)

That is, there is a high probability that the conduction electrons of the sense current enter the free magnetic layer F without being scattered at the interface between the nonmagnetic conductive layer 15 and the free magnetic layer F with respect to the up spin.

On the other hand, as shown in FIG. 7, when the direction of the external magnetic field is in the + z direction and the magnetization of the free magnetic layer F is antiparallel to the fixed magnetization, conduction electrons of the sense current are non-parallel. When the light enters the interface with the free magnetic layer F from the magnetic conductive layer 15 side, both the down spin and the up spin are likely to be scattered, and cannot enter the free magnetic layer F.

As described above, when the direction of the magnetization of the free magnetic layer F and the direction of the fixed magnetization are parallel, the up spin passes through the free magnetic layer F, and the conduction electrons of the sense current pass through the free magnetic layer F and the protective layer 19. When the direction of the magnetization of the free magnetic layer F is antiparallel to the direction of the fixed magnetization, both the up spin and the down spin are caused by the interface between the nonmagnetic conductive layer 15 and the free magnetic layer F. The mean free path is short because it cannot pass through.

Therefore, when the direction of the external magnetic field is in the −z direction, the mean free path of the up spin electrons is long, so that the electric resistance (R) between the electrode layers 20 is equal to the electric resistance (R0) when there is no external magnetic field. ), On the other hand, when the direction of the external magnetic field is in the + z direction, the mean free path of both up spin and down spin electrons is short. Therefore, the electric resistance (R) between the electrode layers 20 is reduced by the external magnetic field. It is higher than the electrical resistance (R0) when there is no power. (GMR effect)

The graph of FIG. 8 shows the relationship between the external magnetic field (H) and the electric resistance (R) between the electrode layers 20. FIG.
As shown in (2), when the external magnetic field (H) is applied in the direction of -z (the direction of the sense current magnetic field), the electric resistance (R) between the electrode layers 20 becomes the electric resistance (R0) when there is no external magnetic field. )
To decrease from. The electric resistance (R) decreases linearly as the magnitude of the external magnetic field (H) increases, and the magnitude of the external magnetic field (H) is determined by the magnitude of the bias magnetic field and the characteristics of the free magnetic layer F (Hs). Above, the electric resistance (R)
Is a constant value (R2).

On the other hand, as shown in FIG.
Is applied in the + z direction (anti-parallel to the direction of the sense current magnetic field), the electric resistance (R) between the electrode layers 20 increases from the electric resistance (R0) in the absence of an external magnetic field. The electric resistance (R) increases as the magnitude of the external magnetic field (H) increases.
When the magnitude of the external magnetic field (H) increases linearly and exceeds a value (Hs) determined by the magnitude of the bias magnetic field and the characteristics of the free magnetic layer F, the electric resistance (R) becomes a constant value (R1). Becomes

If the magnitude (absolute value) of the external magnetic field (H) is the same, the external magnetic field (H) is opposite to the direction of -z (the direction of the sense current magnetic field) and the direction of + z (the direction of the sense current magnetic field). When applied in parallel, the respective electrical resistances (R) are:
When there is no external magnetic field (H = 0), the amount of change (ΔR) from the electric resistance (R0) is equal.

The change in the electric resistance (R) due to the GMR effect is extracted as an output voltage (V) between the electrode layers 20. When the magnitude (absolute value) of the external magnetic field (H) is equal, the output voltage (V1) when the external magnetic field (H) is applied in the direction of -z (the direction of the sense current magnetic field) and the external magnetic field (H ) Is applied in the + z direction (anti-parallel to the direction of the sense current magnetic field), the output voltage (V2) changes from the output voltage (V0) without the external magnetic field (H = 0), respectively. ΔV) are equal and the output voltage (V
1, V2) are symmetric with respect to the output voltage (V0) when there is no external magnetic field (H = 0). Symmetric output voltage waveforms facilitate digital signal processing.

On the other hand, when the influence of the sense current magnetic field is large as in the prior art, as shown in FIG. 10, when the external magnetic field (H) is applied in the direction of -z (the direction of the sense current magnetic field), the electric resistance is reduced. (R) decreases linearly with an increase in the magnitude of the external magnetic field (H), and the external magnetic field (H) becomes constant (H).
s2), the electrical resistance (R) becomes a constant value (R
4). Further, when the external magnetic field (H) is applied in the direction of + z (anti-parallel to the direction of the sense current magnetic field), the electric resistance (R) increases linearly with an increase in the magnitude of the external magnetic field (H). When the external magnetic field (H) exceeds a certain value (Hs1), the electric resistance (R) becomes a certain value (R3).

At this time, the constant value (Hs2) of the external magnetic field parallel to the direction of the sense current magnetic field is larger than the constant value (Hs1) of the external magnetic field antiparallel to the direction of the sense current magnetic field due to the influence of the sense current magnetic field. The electric resistance (R4) corresponding to a constant value (Hs2) of the external magnetic field which is small and parallel to the direction of the sense current magnetic field is different from the electric resistance (R0) when there is no external magnetic field (H = 0). It is smaller than the electric resistance (R3) corresponding to the constant value (Hs1) of the external magnetic field antiparallel to the direction of the current magnetic field.

Accordingly, external magnetic fields (H) having the same magnitude (absolute value) are applied in the direction of -z (direction of the sense current magnetic field) and in the direction of + z (anti-parallel to the direction of the sense current magnetic field). At this time, the electric resistance (R) changes more greatly with respect to the external magnetic field (H) applied in the direction of + z (anti-parallel to the direction of the sense current magnetic field).

In such a relationship between the external magnetic field (H) and the electric resistance (R), the output voltage waveform has asymmetry (Asymmetr
y-Plus), which is not preferable for digital signal processing. Even when the sense current magnetic field is in the + z direction, the relationship between the external magnetic field (H) and the electric resistance (R) is as shown in FIG.
As shown in the figure, the asymmetry (Asymmetr
y-Minus).

When the specific resistance of the first pinned magnetic layer 12 that does not contribute to the GMR effect is high, the shunt current of the sense current to the first pinned magnetic layer 12 is small, and more sense current is applied to the GMR effect. It can flow to the second pinned magnetic layer 14, the nonmagnetic conductive layer 15, and the free magnetic layer F that contribute. G
If the shunt current (shunt loss) of the sense current to the layer that does not contribute to the MR effect is small, the resistance change (Δ
R) and the rate of change in resistance due to the GMR effect (ΔR /
R) is improved, and highly reliable external magnetic field detection can be performed.

Further, the specific resistance of the antiferromagnetic layer 11 is set to 200
When the thickness is set to μΩ · cm or more and the thickness of the antiferromagnetic layer 11 is set to 15 nm or less, shunt loss to the antiferromagnetic layer 11 can also be suppressed. Specific resistance is 200μΩ ・ cm
The manufacturing method of the antiferromagnetic layer 11 described above
1 is formed and then annealed to change the crystal structure of the antiferromagnetic layer 11.

Furthermore, if the interface state between the insulating layer 4 and the antiferromagnetic layer 11 is good and the adhesion can be ensured, the underlayer 2
By eliminating 2, it is possible to eliminate shunt loss to the underlying layer 22.

Next, a second embodiment of the present invention will be described. In the second embodiment of the present invention, as shown in FIG.
The first fixed magnetic layer 12 of the fixed magnetic layer P is
First layer 12a in which part on one side is made of Co-based amorphous
And the interface portion with the nonmagnetic layer 13 is the same crystalline Co, CoFe alloy, CoNiF as the second pinned magnetic layer 14.
The second layer 12b is made of an e-alloy or a CoNi alloy. The second embodiment is similar to the first embodiment except for the pinned magnetic layer P.

The magnetic coupling between the first and second fixed magnetic layers 12 and 14 via the nonmagnetic layer 13 is caused by the interface between the first and second fixed magnetic layers 12 and 14 and the nonmagnetic layer 13. Therefore, the second layer 12b, which is the interface between the first pinned magnetic layer 12 and the non-magnetic layer 13, is made of the same crystalline Co, CoFe alloy, CoNiFe alloy, CoNi as the second pinned magnetic layer 14.
By using a material such as an alloy, the first pinned magnetic layer 12
First and second than the whole made of Co-based amorphous alloy
The magnetic coupling between the fixed magnetic layers 12 and 14 becomes stronger, and the magnetization direction of the fixed magnetic layer P is stabilized. At this time, the second layer 1
2b, when the film thickness is large, the electric resistance of the first fixed magnetic layer 12 decreases. In order to improve the magnetic coupling between the first and second pinned magnetic layers 12 and 14, the thickness of the second layer 12b is
0.3 nm or more is sufficient.

Next, a thin film magnetic head using such a spin valve type thin film element of the present invention will be described. As shown in FIG. 1, the thin film magnetic head of the present invention is formed on a head forming surface 61a of a rectangular slider 61 made of ceramics. The slider 61 has a magnetic disk facing surface 61b substantially perpendicular to the head forming surface 61a.

When the thin-film magnetic head of the present invention is a composite magnetic head, as shown in FIGS. 2 and 3, a reproducing section h1 and a recording section h2 are formed on a head forming surface 61a of a slider 61 by lamination. Have been. In the reproducing section h1, the spin-valve thin-film magnetic element 1 of the present invention is sandwiched between upper and lower shield layers 2 and 3 made of a soft magnetic material such as permalloy with an insulating layer 4 interposed therebetween.

The recording unit h2 laminated on the reproducing unit h1
A lower core layer also serving as the upper shield layer 2, a magnetic gap layer 8 formed of an inorganic insulating material formed on the upper shield layer 2, and a spiral formed on the magnetic gap layer 8 with the inorganic insulating layer 5 interposed therebetween. A coil layer 9, an organic insulating layer 7 covering the coil layer 9, and an upper core layer 10 made of a soft magnetic material such as permalloy covering the coil layer 9 from above the organic insulating layer 7. Reference numeral 10 denotes a magnetic gap layer 8 on the magnetic disk facing surface 61b side of the slider 61.
It is formed in contact with the surface and sandwiches the upper shield layer 2 and the magnetic gap layer 8. Also, the upper core layer 10
The coil layer 9 is connected to the upper shield layer 2 in the vicinity of the winding center.

In the thin-film magnetic head, the reproducing section h
Although the composite head including the recording section h2 and the recording section h2 has been described, a read-only head having only the reproduction section h1 without forming the recording section h2 may be used.

Next, a case where such a thin film magnetic head is mounted on a hard magnetic disk device to detect a recording magnetic field will be described. The hard magnetic disk device has a built-in magnetic disk (not shown) which is a recording medium provided with a recording magnetization pattern, and a slider 61 is provided on a surface of the magnetic disk on which the recording magnetization pattern is provided. It is attached so that the opposing surface 61b may oppose.

A magnetic field leaking from the magnetic disk is applied to the reproducing head h1 in a direction orthogonal to the magnetic disk facing surface 61b (height direction shown in FIG. 3).

At this time, the leakage magnetic field other than between the upper shield layer 3 and the lower shield layer 2 is reduced by
3 and is not detected by the spin-valve thin-film magnetic element 1.
Only the leakage magnetic field between the upper shield layer 3 and the lower shield layer 2 can be detected.

The direction of the magnetic field leaking from the magnetic disk is determined when the spin-valve thin-film magnetic element 1 is the first embodiment of the present invention shown in FIG. Is parallel or anti-parallel to the direction of magnetization (−z direction shown in FIG. 4).

When the magnetic disk rotates, the leakage magnetic field of the magnetic disk that appears between the upper shield layer 3 and the lower shield layer 2 changes, and the change in the leakage magnetic field is caused by the change in resistance of the spin-valve thin-film magnetic element 1 due to the GMR effect. (ΔR).

With the increase in the recording density of the hard magnetic disk drive, the sense current density tends to increase in order to increase the detection sensitivity.
In other words, the magnetization state of the fixed magnetic layer P does not change due to the heat generated by the sense current, and a highly reliable thin-film magnetic head can be obtained.

The output voltage (V) of the spin-valve thin-film magnetic element 1 is the output voltage (V0) when there is no leakage magnetic field, regardless of the direction of the leakage magnetic field from the magnetic disk toward the thin-film magnetic head. ). If the output voltage (V) is symmetric, digital signal processing is easy, so that a reading error does not occur and a highly reliable thin film magnetic head can be obtained.

Further, the spin-valve thin-film magnetic element 1
Since the shunt loss of the sense current is suppressed,
A highly reliable thin film magnetic head having a high resistance change rate (ΔR / R) due to the GMR effect can be obtained.

[0094]

The spin-valve thin-film magnetic element of the present invention has a pinned magnetic layer in which a first pinned magnetic layer, a non-magnetic layer, and a second pinned magnetic layer are sequentially stacked from the antiferromagnetic layer side. An artificial ferrimagnetic state in which the first and second pinned magnetic layers are magnetically coupled via a nonmagnetic layer in a layered structure;
The first fixed magnetic layer has a higher specific resistance than the second fixed magnetic layer. In such a spin-valve thin-film magnetic element, the magnetization state of the pinned magnetic layer is thermally stable, and the sense current is hardly shunted to the first fixed magnetic layer having a high specific resistance. The center does not shift to the first fixed magnetic layer side. Therefore, the center of the sense current substantially coincides with the center of the non-magnetic conductive layer, so that the free magnetic layer
The effect of the magnetic field generated by the sense current is relatively small, and G
The magnitude of the resistance change due to the MR effect is almost equal when the direction of the external magnetic field is parallel and antiparallel to the direction of the sense current magnetic field in the free magnetic layer, and the output voltage between the electrode layers becomes symmetric, Digital signal processing of the output voltage waveform is facilitated.

The spin-valve thin-film magnetic element of the present invention
The fixed magnetic layer has a three-layer structure in which a first fixed magnetic layer, a nonmagnetic layer, and a second fixed magnetic layer are sequentially stacked from the antiferromagnetic layer side, and the first and second fixed magnetic layers are nonmagnetic. An artificial ferrimagnetic state magnetically coupled antiparallel through the layers, wherein the first pinned magnetic layer is in contact with the antiferromagnetic layer and in contact with the nonmagnetic layer. A second layer made of the same material as the second pinned magnetic layer, wherein the first layer has a higher specific resistance than the second layer and the second pinned magnetic layer. In such a spin-valve thin-film magnetic element, the magnetization state of the fixed magnetic layer is thermally stable, and the first magnetic layer has a high specific resistance.
It is difficult for the sense current to shunt to the fixed magnetic layer, and the center of the sense current does not shift to the first fixed magnetic layer side. Therefore, the center of the sense current substantially coincides with the center of the non-magnetic conductive layer, so that the free magnetic layer is relatively unaffected by the magnetic field generated by the sense current, and the magnitude of the resistance change due to the GMR effect depends on the external magnetic field. When the direction is parallel to and antiparallel to the direction of the sense current magnetic field in the free magnetic layer, the directions are almost equal, and the output voltage between the electrode layers is symmetrical, so that digital signal processing of the output voltage waveform is facilitated. . Further, the first pinned magnetic layer is formed of the same material as the second pinned magnetic layer because the second layer magnetically coupled to the second pinned magnetic layer via the nonmagnetic layer has the first pinned magnetic layer. The magnetic layer and the second pinned magnetic layer are easily magnetically coupled in antiparallel, and the magnetization state of the pinned magnetic layer can be made to be a more stable artificial ferrimagnetic state.

In the thin-film magnetic head according to the present invention, the spin-valve magnetic element described above is provided between a pair of shield layers made of a soft magnetic material. In such a thin-film magnetic head, a magnetic field other than the shield layer is absorbed by the shield layer, and the spin-valve thin-film magnetic element can detect only the magnetic field that appears between the shield layers. The output voltage of the spin-valve thin-film magnetic element is symmetric with respect to the output voltage when there is no leakage magnetic field, depending on the direction of the magnetic field from the medium toward the thin-film magnetic head and the opposite direction. If the output voltage is symmetric, digital signal processing is easy, so that a reading error does not occur and a highly reliable thin film magnetic head can be obtained.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing a slider on which a thin-film magnetic head of the present invention is formed.

FIG. 2 is a schematic view of an example of the thin-film magnetic head of the present invention.

FIG. 3 is a sectional view of an example of the thin-film magnetic head of the present invention.

FIG. 4 is an explanatory view of a first embodiment of the spin-valve element of the present invention.

FIG. 5 is an explanatory view of a second embodiment of the spin-valve element of the present invention.

FIG. 6 is an explanatory diagram of a GMR effect.

FIG. 7 is an explanatory diagram of a GMR effect.

FIG. 8 is a graph showing the relationship between the electric resistance and the external magnetic field of the spin-valve thin-film magnetic element of the present invention.

FIG. 9 is an explanatory view of a conventional spin valve element.

FIG. 10 is a graph showing the relationship between the electric resistance of a conventional spin-valve thin-film magnetic element and an external magnetic field.

FIG. 11 is a graph showing the relationship between the electric resistance of a conventional spin-valve thin-film magnetic element and an external magnetic field.

[Description of Signs] P Fixed magnetic layer F Free magnetic layer 1 Spin-valve thin film magnetic element 2 Upper shield layer 3 Lower shield layer 11 Antiferromagnetic layer 12 First fixed magnetic layer 12a First layer 12b Second layer 13 Non Magnetic layer 14 Second fixed magnetic layer 15 Nonmagnetic conductive layer 17 Diffusion prevention layer 18 Soft magnetic layer

Claims (15)

[Claims] 1. A laminate comprising an antiferromagnetic layer, a fixed magnetic layer laminated in contact with the antiferromagnetic layer, and a free magnetic layer opposed to the fixed magnetic layer via a nonmagnetic conductive layer. And a pair of electrode layers provided on both sides of the laminate, wherein the fixed magnetic layer is formed by contacting the first fixed magnetic layer made of a ferromagnetic material with the antiferromagnetic layer. 1 fixed magnetic layer, a non-magnetic layer made of a non-magnetic material, and a second fixed magnetic layer made of a ferromagnetic material are sequentially laminated and formed, and the first fixed magnetic layer is And the magnetization state of the fixed magnetic layer is fixed and the magnetization direction is fixed by magnetic coupling with the antiferromagnetic layer, and the first and second fixed magnetic layers are With the non-magnetic layer interposed,
A spin-valve thin-film magnetic element having an artificial ferrimagnetic state. 2. The spin valve according to claim 1, wherein the first fixed magnetic layer is made of a Co-based amorphous alloy, and the second fixed magnetic layer is made of Co or a Co-based alloy. Type thin film magnetic element. 3. A laminate comprising an antiferromagnetic layer, a fixed magnetic layer laminated in contact with the antiferromagnetic layer, and a free magnetic layer opposed to the fixed magnetic layer via a nonmagnetic conductive layer. And a pair of electrode layers provided on both sides of the laminate, wherein the fixed magnetic layer is formed by contacting the first fixed magnetic layer made of a ferromagnetic material with the antiferromagnetic layer. A first fixed magnetic layer, a nonmagnetic layer made of a nonmagnetic material, and a second fixed magnetic layer made of a ferromagnetic material are sequentially laminated and formed, and the first fixed magnetic layer is formed of the second fixed magnetic layer. A first layer having a higher specific resistance than the first layer and a second layer made of the same material as the second pinned magnetic layer, wherein the first layer is formed in contact with the antiferromagnetic layer, The second layer is formed in contact with the non-magnetic layer, and the magnetization state of the first pinned magnetic layer is the same as that of the anti-ferromagnetic layer. The direction of magnetization is aligned and fixed by coupling, and the first and second pinned magnetic layers are coupled antiparallel with the nonmagnetic layer interposed therebetween, thereby forming an artificial ferrimagnetic state. A spin-valve thin-film magnetic element characterized by the following. 4. The method according to claim 1, wherein the first layer of the first pinned magnetic layer comprises C
an o-based amorphous alloy, wherein the second layer and the second fixed magnetic layer of the first fixed magnetic layer are made of crystalline Co,
4. The spin-valve thin-film magnetic element according to claim 3, wherein the spin-valve thin-film magnetic element is a Co-based alloy. 5. The Co-based amorphous alloy according to claim 2, wherein the specific resistance is 100 μΩ · cm or more.
Or a spin-valve thin-film magnetic element according to item 4. 6. The Co-based amorphous alloy is Co-Z
r, Co-Hf, Co-Ti, Co-Nb, Co-T
a, Co-TZ, or Co-TZB, T
Is Mo, W, Nb, Ta, Z is one or more elements selected from Zr, Hf, and Ti;
System alloys are CoNi alloy, CoFe alloy, CoFeNi
The spin-valve thin-film magnetic element according to claim 2, wherein the spin-valve thin-film magnetic element is any one of an alloy. 7. The Co-based amorphous alloy comprises Co
7. The spin-valve thin-film magnetic element according to claim 2, wherein the Co-based alloy contains 0 atomic% or more, and the Co-based alloy contains 50 atomic% or more of Co. . 8. The non-magnetic layer is made of Ru, Rh, Ir, C
8. The spin-valve thin-film magnetic element according to claim 2, wherein the spin-valve thin-film magnetic element is any one of r, Re, and Cu. 9. A sense current is applied to the laminate from a pair of the electrode layers, and the direction of a magnetic field generated by the sense current is determined by the position of the first fixed magnetic layer and the direction of the first magnetic field. 9. The spin-valve thin film magnetic element according to claim 1, wherein the magnetization direction of the pinned magnetic layer coincides with the direction of magnetization. 10. The antiferromagnetic layer comprises an alloy containing elements X and Mn, wherein the element X is composed of Pt, Pd, Ir, R
10. The spin-valve thin-film magnetic element according to claim 1, wherein the element is at least one of h, Ru, and Os. 11. The spin-valve thin-film magnetic element according to claim 10, wherein an interface structure between the antiferromagnetic layer and the pinned magnetic layer is in a crystallographic mismatch state. 12. The antiferromagnetic layer is made of an X-Mn-X 'alloy, wherein X is Pt, Pd, Ir, Rh, Ru, Os
Any one or more of the above elements, and X ′
Is Ne, Ar, Kr, Xe, Be, B, C, Fe, C
o, Ni, Cu, Zn, Ga, Ge, Zr, Nb, M
o, Ag, Cd, Sn, Hf, Ta, W, Re, Au,
Pb and one or more of the rare earth elements, and the element X ′ has penetrated into the gaps of the X—Mn spatial lattice, or a part of the X—Mn crystal lattice has been replaced with the element X ′. The spin-valve thin-film magnetic element according to claim 11, wherein: 13. The antiferromagnetic layer has a specific resistance of 200 μΩ ·
13. The spin-valve thin-film magnetic element according to claim 9, wherein the thickness of the antiferromagnetic layer is 8 to 15 nm. 14. The spin-valve thin film magnetic element according to claim 1, wherein said antiferromagnetic layer is formed directly on an insulating layer. 15. A thin-film magnetic head, wherein the spin-valve magnetic element according to claim 1 is provided between a pair of shield layers made of a soft magnetic material.