JP2002367962A5

JP2002367962A5 -

Info

Publication number: JP2002367962A5
Application number: JP2001167162A
Authority: JP
Filing date: 2001-06-01
Publication date: 2005-10-06
Anticipated expiration: 2021-06-01

Claims

In an atmosphere obtained by introducing a first gas while evacuating the vacuum chamber to a vacuum, by supplying high frequency power to one electrode of the processing Rimoto plate is attached, the one electrode and the opposite thereto a first step of physical processing the object to be punished Rimoto plate by plasma generated between the the other electrode,
Wherein the after treatment of the processing Rimoto plate is completed, the introducing a second gas into the vacuum chamber as well as adjusted to a predetermined pressure, neutralization plasma by supplying the high frequency power to one of the electrodes the to generate a second step of reducing the charge quantity of the object to be punished Rimoto plate,
Wherein the After the second step is ended, a third step of applying Shinano a DC voltage to the one electrode is taken out is separated from the one electrode to al before Symbol be punished Rimoto plate,
A plasma processing method comprising:

2. The plasma processing method according to claim 1, wherein in at least one of the first step and the second step, a DC voltage is superimposed on the high frequency power and supplied to one electrode.

In the second step, taking out supplies a high frequency power obtained by superimposing a DC voltage to one electrode is moved away La be punished Rimoto plate from said one electrode,
The plasma processing method according to claim 1, wherein the third step is reduced.

In an atmosphere obtained by introducing a first gas while evacuating the vacuum chamber to vacuum, to one electrode of the processing Rimoto plate is attached, the high and pulsed in synchronization with the high-frequency power to the pulse signal of a predetermined period by supplying a frequency pulse, a first step of physical processing the object to be punished Rimoto plate by a pulse plasma generated between the one electrode and the other electrodes opposed thereto,
Wherein the after treatment of the processing Rimoto plate is completed, the well as adjusted by introducing a second gas into the vacuum chamber to a predetermined pressure, neutralization plasma by supplying the high-frequency pulse to one electrode the to generate a second step of reducing the charge quantity of the object to be punished Rimoto plate,
On after the second step is completed, a third step of taking out the front SL be punished Rimoto plate is spaced apart from the one electrode,
A plasma processing method comprising:

5. The plasma processing method according to claim 4, wherein the high-frequency pulse is generated using a pulse signal that outputs a pulse with a period of several μs to several ms.

In the second step, but such to generate neutralizing plasma extraction by separating the et to be punished Rimoto plate from said one electrode,
The plasma processing method according to claim 4 or 5, wherein the third step is reduced.

In the first atmosphere in which the gas is introduced together with the interior of a vacuum chamber is evacuated to a vacuum, supplies high-frequency power from the first RF power source to the first electrode to be punished Rimoto plate is attached, said first A high frequency power is supplied from a second high frequency power source to the coiled electrode portion of the second electrode opposite to the first electrode, and the treatment is performed by inductively coupled plasma generated between the first and second electrodes. a first step of processing the Rimoto plate,
Wherein stopping the supply of the high frequency power from the first RF power supply upon detecting an end of processing of the processing Rimoto plate to said first electrode, the second from that stop time after a predetermined time A second step of stopping the supply of high-frequency power from the high-frequency power source to the second electrode;
On after the second step is completed, a third step of taking out the front SL be punished Rimoto plate is spaced apart from said first electrode,
A plasma processing method comprising:

The plasma processing method according to claim 7, wherein a predetermined time from when the driving of the first high-frequency power source is stopped to when the second high-frequency power source is stopped is set within a range of 0.1 s to 5 s.

In a second step, after stopping the supply of the high-frequency power from the first high frequency power source at the time of detecting the end of processing of the processing Rimoto plate to the first electrode, the first from the second RF power supply It continued Shinano supply of RF power to the second electrode starts to separating operation from the first electrode of al the treatment Rimoto plate, the driving of the second RF power supply was stopped after a predetermined time ,
The plasma processing method according to claim 7 or 8, wherein the third step is reduced.

In the first atmosphere in which the gas is introduced together with the interior of a vacuum chamber is evacuated to a vacuum, supplies high-frequency power from the first RF power source to the first electrode to be punished Rimoto plate is attached, said first A high frequency power is supplied from a second high frequency power source to the coiled electrode portion of the second electrode opposite to the first electrode, and the treatment is performed by inductively coupled plasma generated between the first and second electrodes. a first step of processing the Rimoto plate,
After stopping the object to be punished Rimoto plate processing of terminating the detected time point at said first and second two high-frequency power supply of the drive at the same time, a predetermined pressure by introducing a second gas into the vacuum chamber adjusted to together, the high frequency power is supplied respectively to the first and second two electrodes to generate a static elimination plasma from both the first and second high-frequency power supply, reducing the charge amount of the object to be punished Rimoto plate A second step of
A third step of taking out applying Shinano a DC voltage only to the first electrode is moved away La before Symbol be punished Rimoto plate from said first electrode,
A plasma processing method comprising:

In at least one of the first step and the second step, a DC voltage is superimposed on the high frequency power of the first high frequency power supply and supplied to the first electrode,
In the second step, the second gas is introduced into the vacuum chamber and adjusted to a predetermined pressure, and a DC voltage is superimposed on the high-frequency power of the first high-frequency power source and supplied to the first electrode, and with a second high-frequency electric power of the high frequency power supply second but such is supplied to the electrodes to generate a static elimination plasma starts the operation of separating et be punished Rimoto plate from said first electrode, a predetermined time has elapsed Later, power supply to both electrodes was stopped,
The plasma processing method according to claim 10, wherein the third step is reduced.

The vacuum chamber in an atmosphere obtained by introducing a first gas while evacuated, synchronization from the first high-frequency power supply to the first electrode to be punished Rimoto plate is attached to the high-frequency power to the pulse signal of a predetermined period And supplying the pulsed high-frequency pulse and supplying the high-frequency power from the second high-frequency power source to the coiled electrode portion of the second electrode facing the first electrode. a first step of physical processing the object to be punished Rimoto plate by inductively coupled plasma generated between the electrodes of,
After stopping the object to be punished Rimoto plate processing of terminating the detected time point at said first and second two high-frequency power supply of the drive at the same time, a predetermined pressure by introducing a second gas into the vacuum chamber And a second step of generating static elimination plasma by supplying a high frequency pulse to the first electrode and a high frequency power to the second electrode, respectively.
Plasma processing method, wherein the after the end of the second step simultaneously or the second step, the pre-Symbol be punished Rimoto plate was taken out and is separated from the first electrode.

A vacuum chamber in which the inside is evacuated to vacuum by an exhaust means;
A first electrode to be punished Rimoto plate is attached is provided in the interior of the vacuum chamber,
Provided inside the vacuum chamber in an arrangement opposed to the first electrode, the other electrode also serving as a gas supply unit for introducing a gas from the gas blowout hole to the inside of the vacuum chamber,
A high frequency power supply for supplying high frequency power to said first electrode,
A direct current power source for outputting predetermined direct current power;
A substrate lift-up unit for taking out the substrate to be processed apart from the first electrode;
Wherein with processing to be punished Rimoto plate stops driving of the high frequency power supply at the end of the neutralization process by neutralizing plasma at the end of completion of the processing at the start or the neutralization process of the processing Rimoto plate start or supplying the to the first electrode a DC voltage of the DC power supply at any timing at the start extraction is superimposed on the high frequency power of the high frequency power supply of the processing Rimoto plate by the substrate lift-up unit, Alternatively, the plasma processing apparatus includes a control unit that controls the direct current power to be supplied to the first electrode as it is.

Instead of a DC power supply , a pulse generation circuit that outputs pulses with a period of several μs to several ms, and a high-frequency power of the high-frequency power supply are pulsed in synchronization with an output pulse of the pulse generation circuit, thereby pulsing the high-frequency power The plasma processing apparatus according to claim 13, further comprising: a high-frequency pulse generation circuit that generates a high-frequency pulse and supplies the generated high-frequency pulse to the first electrode.

In place of the other electrode , a second electrode having a coiled electrode portion disposed in a vacuum sealed space formed by a dielectric partition plate is provided at one end inside the vacuum chamber,
A second high frequency power source for supplying high frequency power to the second electrode;
And characterized by comprising a control unit for driving and driving stops high-frequency power source and the second RF power supply you high-frequency power is supplied to the first electrode to be punished Rimoto plate is mounted at a predetermined timing The plasma processing apparatus according to claim 13 or 14 .