JP2002367962A - Method and equipment for plasma processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an equipment for plasma processing which enable to demount without any trouble a dielectric substrate to be processed such as a large glass substrate after being subjected to the surface treatment, with the dielectric breakdown of an insulation thin film of a device formed on the substrate being surely prevented. SOLUTION: When processing the dielectric substrate 20 to be processed such as a large glass substrate using a plasma, either one of the following means is employed: a means for demounting the dielectric substrate 20 to be processed from an electrode 19, with a DC voltage being applied to the electrode 19; a means for processing the dielectric substrate 20 to be processed using a plasma excited by supplying RF power overlaid with DC voltage to the electrode 19; a means for processing the dielectric substrate 20 to be processed using a pulse plasma; and a means for processing the dielectric substrate 20 to be processed using an inductively coupled plasma, and thereafter stopping the supply of RF power to an electrode 38 disposed on the side where the dielectric substrate 20 to be processed is installed, earlier by a specified period of time T.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma treatment used for performing a surface treatment such as dry etching, CVD or sputtering on a glass substrate to be treated, which is a dielectric, in the manufacture of a semiconductor device or a liquid crystal display device. The present invention relates to a method and a plasma processing apparatus,
The present invention relates to a plasma processing method and a plasma processing apparatus capable of simultaneously etching a multilayer film formed on a large glass substrate in a dry etching step in a process of forming a transistor element for a liquid crystal display.

[0002]

2. Description of the Related Art In recent years, in the field of manufacturing liquid crystal display elements, from the viewpoint of reducing the manufacturing cost due to the tendency to increase in size of the panel and protecting the environment, the manufacturing method has been simplified and the etching method using a chemical solution has been eliminated. There is an increasing demand for, for example, the emergence of a method and an apparatus that can dry-etch a laminated film formed on a large-sized glass substrate all at once at a high speed. In such a laminated film, an insulating thin film for insulating between the metal films is formed due to the configuration of the thin film circuit, and the insulating thin film has an upper limit threshold or a lower limit threshold of the withstand voltage. If a voltage exceeding the value is applied, dielectric breakdown will occur.

On the other hand, the dry etching described above is
Plasma is generated in a vacuum, the reaction gas such as etching gas is separated, and physical and chemical reactions are combined using ions to process the glass. When etching is performed, a large amount of charges are generated on the substrate by electrons from the plasma. And
When a charge exceeding the withstand voltage threshold of the insulating thin film is charged on the glass substrate to be processed, dielectric breakdown of the insulating thin film occurs, so that a thin film circuit cannot be formed by dry etching. Therefore, conventionally, it is not possible to generate plasma such that no electric charge is charged on the glass substrate to be processed, or it is possible to reduce the electric charge charged on the gaseous substrate to be processed by devising the static elimination process using the static elimination plasma. Attempts have been made to see if they can.

FIG. 7 is a schematic longitudinal sectional view showing a plasma processing apparatus generally used as a conventional dry etching apparatus. In FIG.
Is driven by the turbo molecular pump 2 and the dry pump 3 as exhaust means, the internal air is exhausted through the exhaust port 4, and the shower plate 8 forming the bottom surface of the upper electrode 7 also serving as a gas supply unit. A reaction gas G such as an etching gas or a film forming gas is introduced from the formed gas blowing holes 9. The supply of the reaction gas G to the vacuum chamber 1 is performed by a gas supply source 10, a primary valve 11, and a flow control unit 1 including a mass flow controller.
The gas is supplied to a gas introduction unit 14 above the upper electrode 7 through a gas supply system 5 including a second valve 12 and a secondary valve 13, and the shower plate 8 of the upper electrode 7 and the top surface of the vacuum chamber 1 pass through the gas introduction unit 14. The reaction gas G supplied to the gas space 17 formed between them is introduced into the internal space of the vacuum chamber 1 from the gas outlets 9. The reaction gas G introduced into the vacuum chamber 1 is adjusted to a predetermined pressure by controlling the gas supply system 5.

On the other hand, on a top surface of a lower electrode 19 provided on an insulating support base 18 provided on a bottom surface inside the vacuum chamber 1, a glass substrate 20 to be processed, that is, a dry etching is mounted. And set.
In the atmosphere in which the reaction gas G is introduced into the evacuated vacuum chamber 1, a constant high-frequency power is supplied to the lower electrode 19 from the high-frequency power supply 21 via the connection terminal 22. As a result, plasma is excited between the lower electrode 19 and the upper electrode 7 connected to the ground through the connection terminal 23, and the glass substrate 20 to be processed is subjected to dry etching by plasma. Is done. When the end of the dry etching is detected, the supply of the high-frequency power from the high-frequency power supply 21 is stopped, and the supply of the reaction gas G by the gas supply system 5 is also stopped.

Next, the glass substrate 20 having been subjected to the surface treatment is driven up and down by a driving source such as a cylinder (not shown) to drive a plurality of substrate lifting pins. 27 is the lower electrode 19
After being lifted up and transferred onto a transfer arm (not shown), it is carried out of the vacuum chamber 1. Prior to carrying out the glass substrate 20 to be processed, the following description will be given. Such a static elimination process is performed.

That is, during the dry etching,
The surface of the glass substrate 20 to be processed is set to a negative potential by the plasma of the negative reaction gas G, and static electricity is generated between the glass substrate 20 to be processed and the lower electrode 19 by plasma charge-up. As shown by the solid line in FIG. 8A, at time t1 when the dry etching is completed, the surface of the glass substrate 20 to be processed is charged until it has a very high negative potential (generally minus several hundred volts). The glass substrate 20 is electrostatically attracted to the lower electrode 19.

Therefore, when the glass substrate to be processed 20 electrostatically attracted to the lower electrode 19 is forcibly peeled off from the lower electrode 19 and lifted upward, the electrostatic attraction is forcibly released. As a result, the dielectric constant changes in a direction to increase, and the surface potential of the glass substrate to be processed 20 becomes an abnormally large negative potential due to peeling charging.
In this case, the lower limit threshold value of the withstand voltage of the insulating thin film indicated by the alternate long and short dash line is exceeded, and the insulating thin film of the device formed on the glass substrate 20 to be processed is broken down. Therefore, after the dry etching is completed, before the glass substrate 20 to be processed is removed, a charge removal process is performed.

In this static elimination process, an inert gas such as an oxygen gas, a nitrogen gas or a helium gas, which does not contribute to the etching action, is introduced into the vacuum chamber 1 by controlling the switching of the gas supply system 5, and the inert gas is removed. The pressure is changed stepwise in a region that does not contribute to the etching action, which is a region above the one-dot chain line shown in FIG. 8B. At the same time, the high-frequency power supply 21 supplies the high-frequency power to the lower electrode 19 in a stepwise manner in a region not contributing to the etching action, which is a region below the one-dot chain line shown in FIG. . As a result, the discharge plasma is excited in the vacuum chamber 1, and the charge amount of the glass substrate 20 changes so that the surface potential shifts from a negative potential to a positive potential, as shown in FIG. At time t2 when the charge removal process is completed, the electrostatic attraction between the glass substrate 20 to be processed and the lower electrode 19 is released. After that, the glass substrate 20 to be processed is lifted above the lower electrode 19 by a plurality of substrate lifting pins 27 which are moved up by driving the substrate lift-up unit 24.

[0010]

However, conventionally, the glass substrate 20 to be processed at the time of dry etching is conventionally not used.
Since there is no means for measuring the surface potential, the pressure of the gas G and the voltage value of the high-frequency power are variably adjusted while being set to appropriate values experimentally obtained. As shown by the characteristic curve indicated by the dashed line, the surface of the glass substrate 20 to be processed is charged so as to linearly increase to a negative potential during the dry etching, and this negative potential is the lower threshold voltage of the withstand voltage of the insulating thin film. In some cases, the device may be broken down beyond the limit.

In the neutralization process, while adjusting the pressure and high-frequency power of the gas G as shown in FIGS. 8 (b) and 8 (c), respectively, the neutralization plasma excited by an inert gas which is easily charged to the plus side is used. To be processed glass substrate 20
Is positively charged so that the negative potential of the glass substrate approaches zero. In this case also, since there is no means for measuring the surface potential of the glass substrate 20 to be processed, the above adjustment is empirically performed based on experimental results. In this case, the surface of the glass substrate 20 to be processed is excessively charged from a negative potential to a positive potential, and the positive potential exceeds the upper limit of the withstand voltage of the insulating thin film. was there.

In addition, if the setting is made with care taken to ensure that the above-mentioned dielectric breakdown is prevented from occurring, there is a residual charge, and the electrostatic attraction of the lower electrode 19 of the glass substrate 20 to be processed is caused. Release is insufficient. Therefore, the glass substrate 20 to be processed is peeled and charged at the moment when it is lifted by the substrate elevating pins 27 after the static elimination process, so that the surface has an abnormally large negative potential. There has been a case where the device is broken down beyond the threshold value and the device is broken down.

In view of the above, the present invention has been made in view of the above-mentioned conventional problems, and is intended to reliably prevent a dielectric substrate to be processed such as a large glass substrate from causing dielectric breakdown of an insulating thin film of a device formed thereon. An object of the present invention is to provide a plasma processing method and a plasma processing apparatus capable of reliably preventing dielectric breakdown of an insulating thin film and performing removal without any trouble after performing processing.

[0014]

In order to achieve the above object, in a plasma processing method according to a first aspect of the present invention, an inner space of a vacuum chamber is evacuated to a vacuum and a reaction gas is introduced into the inner space. In an atmosphere, a high-frequency power for plasma generation is supplied to one electrode to which the dielectric substrate to be processed is attached, and the plasma generated between the one electrode and the other electrode opposed thereto is used to generate the plasma. A first step of processing the dielectric substrate to be processed, and after the processing of the dielectric substrate to be processed is completed, an inert gas is introduced into the vacuum chamber to adjust the pressure to a predetermined pressure; A second step of supplying the high-frequency power to the one electrode to generate static elimination plasma to reduce a charge amount of the dielectric substrate to be processed, and after the second step is completed, Square of electrodes to the DC voltage machining treated the while applying comprises a third step of taking out is separated to be treated dielectric substrate from the one of the electrodes.

In this plasma processing method, a DC voltage is applied to one of the electrodes when the dielectric substrate to be processed is removed from one of the electrodes after the termination of the charge removal process in the second step. Since the residual charge is almost eliminated by reducing the amount of charge of the substrate toward zero, the dielectric breakdown of the insulating thin film due to peeling charge is reliably prevented when the dielectric substrate to be processed is separated from the lower electrode. You. In addition, a DC voltage is applied when the dielectric substrate to be removed is removed to control the amount of charge on the glass substrate to be treated to approach zero, so that there is no problem even if there is some residual charge at the end of the charge removal process. Therefore, the static elimination process can be implemented as a setting that can reliably prevent the occurrence of dielectric breakdown.

According to a second aspect of the present invention, in the above-mentioned invention, in at least one of the first step and the second step, a DC voltage is superimposed on a high-frequency power and supplied to one electrode. I did it. In this way, if the DC voltage is applied to one of the electrodes while being superimposed on the high-frequency power in the first step to excite the plasma, the charging of the dielectric substrate during the processing of the dielectric substrate can be achieved. Since the amount can be significantly reduced, dielectric breakdown during processing of the insulating thin film of the device on the dielectric substrate to be processed can be reliably prevented. On the other hand, in the second step, if a DC voltage is applied to one electrode while being superimposed on the high-frequency power to excite the neutralizing plasma, the potential of one electrode to which the dielectric substrate to be processed is electrostatically adsorbed is applied. Can be shifted to the opposite potential by the application of a DC voltage, whereby the electrostatic attraction between the dielectric substrate to be processed and the one electrode can be released.

In the plasma processing method according to a third aspect of the present invention, in the second step of the present invention, the dielectric substrate to be processed which has been processed while supplying high-frequency power having a DC voltage superimposed thereon to one electrode. Was taken away from the one electrode, and the third step was omitted. As a result, peeling charging does not occur when the dielectric substrate to be processed is separated from one of the electrodes, so that the static elimination process and the removal of the dielectric substrate are simultaneously performed while reliably preventing the dielectric breakdown of the insulating thin film. To improve productivity.

According to a fourth aspect of the present invention, there is provided a plasma processing method according to the first aspect, wherein the inner space of the vacuum chamber is evacuated to a vacuum and a reaction gas is introduced into the inner space. A high-frequency power pulse is supplied in synchronization with a pulse signal of a predetermined period, and a high-frequency pulse for plasma generation is supplied to the electrode, and a pulse generated between the one electrode and the other electrode opposed thereto. A first step of processing the dielectric substrate by plasma, and after the processing of the dielectric substrate is completed, an inert gas is introduced into the vacuum chamber to adjust the pressure to a predetermined pressure. While generating the discharge plasma by supplying the high-frequency pulse to the one electrode,
A second step of reducing the charge amount of the dielectric substrate to be processed, and after the second step is completed, removing the processed dielectric substrate by separating it from the one electrode. And (3) steps.

In this plasma processing method, the processing of the dielectric substrate to be processed is performed by the pulsed plasma generated by the pulse discharge. Therefore, the discharge is repeatedly turned on and off in synchronization with the cycle of the high frequency pulse. The surface potential of the dielectric substrate to be processed after the processing can be suppressed to a low potential close to zero without the charge amount increasing linearly. Therefore, it is inevitable that the potential charged on the dielectric substrate to be processed exceeds the threshold value of the insulating thin film of the device during the processing, and the dielectric thin film does not break down. In the charge removal process of the second step, a high frequency pulse is supplied to excite the charge removal plasma, so that the charge amount of the dielectric substrate to be processed does not significantly shift to the opposite potential, and the second step is performed. At the time of completion, the residual charge is almost eliminated and the surface potential of the dielectric substrate to be processed becomes a value closer to zero. Therefore, when the dielectric substrate to be processed is detached from one of the electrodes, there is no residual charge, that is, a state in which the electrostatic attraction is eliminated. No destruction occurs.

[0020] In the plasma processing method according to claim 5 of the present invention, in the above invention, a high-frequency pulse is generated using a pulse signal that outputs a pulse at a period of several μs to several ms. Thus, the pulse discharge is only intermittently turned off at an extremely short interval of several μs to several ms, so that the pulse plasma can be maintained in a state where the processing of the dielectric substrate to be processed is not hindered.

In the plasma processing method according to a sixth aspect of the present invention, in the second step of the present invention, the processed dielectric substrate is separated from the one electrode and taken out while generating static elimination plasma. And the third step was reduced. As a result, since the dielectric substrate to be processed is processed by the pulsed plasma, the surface potential of the dielectric plate to be processed at the end of the processing is suppressed to a low potential close to zero. Even if the dielectric substrate is removed from one of the electrodes at the same time as the static elimination process, no delamination occurs and the static elimination process and the removal operation of the dielectric substrate can be performed simultaneously. Thus, productivity can be further improved.

According to a seventh aspect of the present invention, there is provided the plasma processing method, wherein the inner space of the vacuum chamber is evacuated to a vacuum and a reaction gas is introduced into the inner space. A high-frequency power is supplied to the first electrode and a high-frequency power is supplied to the coiled electrode portion of the second electrode opposed to the first electrode to generate a voltage between the first and second electrodes. A first step of processing the dielectric substrate to be processed by inductively coupled plasma; and a step of detecting the end of the processing of the dielectric substrate to be processed by the first high-frequency power supply to detect the end of the processing.
A second step of stopping supply of high-frequency power to the second electrode, and stopping supply of high-frequency power from the second high-frequency power supply to the second electrode after a lapse of a predetermined time from the stop point; A third step of taking the processed dielectric substrate away from the first electrode after the second step is completed.

In this plasma processing method, the supply of high-frequency power to the first electrode, which charges the surface of the dielectric substrate to be charged at one potential, is stopped until a predetermined time elapses. Since the high-frequency power is supplied only to the second electrode during this period, the electric charge charged on the dielectric substrate to be processed shifts from one potential to the other potential by the high-frequency power supplied to the second electrode. Therefore, the charge amount of the dielectric substrate to be processed is greatly reduced during the lapse of a predetermined time and approaches zero. Therefore, in this plasma processing method, there is no need to perform a charge removal process by introducing an inert gas, and after the supply of high-frequency power to the second electrode is stopped, the first dielectric substrate is removed from the first dielectric substrate. Even when the electrode is removed from the electrode, there is no residual charge, and thus no separation charging occurs.

In the plasma processing method according to claim 8 of the present invention, in the above-described invention, the predetermined time from when the driving of the first high-frequency power supply is stopped to when the driving of the second high-frequency power supply is stopped is in the range of 0.1 s to 5 s. Set within. Thus, it is preferable that the predetermined time, which is the time difference between the drive stoppages of the two high-frequency power supplies, be appropriately selected and set depending on the type and structure of the device formed on the dielectric substrate to be processed.
If set within the time range of s, the predetermined time can be optimized for various types or structures of devices,
By reducing the amount of charge on the dielectric substrate to be processed, the potential on the surface can be almost completely removed.

In the plasma processing method according to a ninth aspect of the present invention, in the second step of the invention, the first high-frequency power source is connected to the first electrode when the completion of the processing of the dielectric substrate to be processed is detected. After the supply of the high-frequency power to the first electrode is stopped, the operation of separating the processed dielectric substrate from the first electrode is performed while the high-frequency power is continuously supplied from the second high-frequency power supply to the second electrode. After the start, the drive of the second high-frequency power supply is stopped after a predetermined time has elapsed, and the third step is omitted. Thereby, even if the operation of removing the dielectric substrate to be processed is started at the timing when the driving of the first high frequency power supply is stopped, the high frequency power supplied to the second electrode causes one of the dielectric substrates to be processed. Since the electric charge of the electric potential shifts to the other electric potential, and the charge amount of the dielectric substrate to be processed is largely reduced to almost zero, the dielectric breakdown of the insulating thin film can be surely prevented. The productivity can be improved by an amount that can be reduced.

[0026] In a plasma processing method according to a tenth aspect of the present invention, the internal space of the vacuum chamber is evacuated to a vacuum and a reaction gas is introduced into the internal space.
A high-frequency power is supplied to a first electrode on which a dielectric substrate to be processed is attached, and a high-frequency power is supplied to a coil-shaped electrode portion of a second electrode opposed to the first electrode, whereby the first A first step of processing the dielectric substrate to be processed by inductively-coupled plasma generated between the first and second electrodes, and the first step of detecting the end of the processing of the dielectric substrate to be processed. And after simultaneously stopping the driving of both the second high-frequency power supply, while introducing an inert gas into the vacuum chamber to adjust to a predetermined pressure,
A second step of supplying high-frequency power from the first and second high-frequency power sources to the first and second electrodes, respectively, to generate neutralizing plasma, and to reduce the charge amount of the dielectric substrate to be processed; And a third step of taking out the processed dielectric substrate that has been processed while applying a DC voltage only to the first electrode while separating the processed dielectric substrate from the first electrode.

According to this plasma processing method, the same effects as those of the plasma processing method according to claim 1 can be obtained even when two types of high-frequency power sources are provided and the dielectric substrate to be processed is processed by inductively coupled plasma. Can be obtained.

[0028] In a plasma processing method according to an eleventh aspect of the present invention, in the above invention, in at least one of the first step and the second step, a DC voltage is superimposed on the high frequency power of the first high frequency power supply. In the second step, an inert gas is introduced into the vacuum chamber to adjust the pressure to a predetermined value, and a DC voltage is superimposed on the high-frequency power of the first high-frequency power supply to superpose the DC voltage on the first electrode. The first high-frequency power is supplied to the first electrode and the high-frequency power of the second high-frequency power supply is supplied to the second electrode.
While starting the operation of separating the processed dielectric substrate from the first electrode while supplying static electricity to the electrodes to generate static elimination plasma, the power supply to both electrodes is stopped after a predetermined time has elapsed. And the third step was reduced. Accordingly, even when two types of high-frequency power sources are provided and the dielectric substrate to be processed is processed by the inductively coupled plasma, the plasma processing method according to the second aspect and the plasma processing method according to the third aspect are described above. Similar effects can be obtained.

A plasma processing method according to a twelfth aspect of the present invention is a method for evacuating an inner space of a vacuum chamber to a vacuum and introducing a reaction gas into the inner space.
A high frequency power pulsed in synchronization with a pulse signal of a predetermined period is supplied to a first electrode to which a dielectric substrate to be attached is attached, and a high frequency pulse is supplied to a second electrode facing the first electrode. A first step of supplying high-frequency power to the coiled electrode portion and processing the dielectric substrate to be processed by inductively-coupled plasma generated between the first and second electrodes; After simultaneously stopping the driving of the first and second high-frequency power supplies at the time of detecting the end of the processing of the body substrate, while introducing an inert gas into the vacuum chamber to adjust the pressure to a predetermined pressure, A high-frequency pulse applied to the first electrode;
A second step of supplying high-frequency power to each of the electrodes to generate static elimination plasma, wherein the processed dielectric substrate is processed simultaneously with the second step or after completion of the second step. Was taken apart from the first electrode.

In this plasma processing method, the plasma processing method according to claim 4 and the plasma processing method according to claim 6, even when processing a dielectric substrate to be processed by inductively coupled plasma by providing two types of high frequency power supplies. The same effect as described above of the processing method can be obtained.

According to a thirteenth aspect of the present invention, there is provided a plasma processing apparatus comprising: a vacuum chamber whose inside is evacuated by an exhaust means; and a first chamber provided inside the vacuum chamber to which a dielectric substrate to be processed is attached. An electrode, and another electrode provided inside the vacuum chamber in a position opposed to the first electrode and serving also as a gas supply unit for introducing a reaction gas from a gas outlet into the vacuum chamber; A high-frequency power supply for supplying high-frequency power for plasma generation to one electrode, a direct-current power supply for outputting predetermined direct-current power, and a substrate for taking out the processed dielectric substrate separated from the first electrode Lift-up unit, when the drive of the high-frequency power supply is stopped at the end of the static elimination process by the static elimination plasma after the processing on the dielectric substrate to be processed is completed The DC power supply of the DC power supply may be provided at any one of a timing of starting the processing of the dielectric substrate to be processed, a timing of starting the charge removing process, and a timing of starting the removal of the dielectric substrate to be processed by the substrate lift-up unit. A control unit configured to superimpose a voltage on the high-frequency power of the high-frequency power supply and supply the voltage to the first electrode, or to supply the DC power to the first electrode as it is.

In this plasma processing apparatus, a high-frequency power supply for supplying high-frequency power for plasma generation to the first electrode;
A DC power supply that outputs a DC voltage, a DC voltage of the DC power supply is superimposed on a high frequency power of the high frequency power supply and supplied to the first electrode, and the high frequency power supply and the DC power supply are driven and stopped at a predetermined timing. Since the control unit is provided, the plasma processing method according to each of the first to third aspects can be faithfully embodied, and the same effect as the processing method can be reliably obtained.

According to a fourteenth aspect of the present invention, there is provided a plasma processing apparatus according to the thirteenth aspect, wherein a pulse generating circuit for outputting a pulse at a period of several μs to several ms in place of the DC power source according to the thirteenth aspect; A high-frequency pulse generation circuit that generates a high-frequency pulse obtained by pulsing the high-frequency power and supplies the high-frequency pulse to the first electrode by pulsating the power in synchronization with an output pulse of the pulse generation circuit. And

In this plasma processing apparatus, several μs to several m
7. A plasma processing method according to claims 4 to 6, which includes a pulse generation circuit that outputs a pulse at a period of s and a high-frequency pulse generation circuit that generates a high-frequency pulse. The same effect as described above can be reliably obtained.

According to a fifteenth aspect of the present invention, there is provided a plasma processing apparatus comprising a vacuum seal formed by a dielectric partition plate at one end inside a vacuum chamber, instead of the other electrode in the invention according to the thirteenth or fourteenth aspect. A second electrode having a coiled electrode portion disposed in the stationary space, a second high-frequency power supply for supplying high-frequency power to the second electrode, and a first electrode to which a dielectric substrate to be processed is attached And a controller for driving and stopping the first high-frequency power supply and the second high-frequency power supply at a predetermined timing.

This plasma processing apparatus has, in addition to the first high-frequency power supply, a coil-shaped electrode portion disposed at one end inside the vacuum chamber in a vacuum sealed space formed by a dielectric partition plate. A second electrode is provided to excite the inductively coupled plasma, and a control unit is provided for driving and stopping the first high-frequency power supply and the second high-frequency power supply at a predetermined timing. The plasma processing method according to each of 7 to 12 is faithfully embodied, and the same effect as that of the processing method can be reliably obtained.

[0037]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic vertical sectional view showing a plasma processing apparatus which embodies the plasma processing method according to the first embodiment of the present invention. In FIG. 1, the same reference numerals as those shown in FIG. And a duplicate description will be omitted. This plasma processing apparatus is different from the apparatus of FIG.
8 and the DC power supply 28
Only the configuration in which switching to the high-frequency power of the high-frequency power supply 21 is performed via the switching circuit unit 29 composed of a relay box controlled by the switching or superimposed on the high-frequency power and applied to the lower electrode 19 via the connection terminal 22 It is.
In addition, as a supplementary explanation, a pressure adjusting valve 31 is provided between the exhaust port 4 and the turbo molecular pump 2 in the vacuum exhaust unit.

Next, a plasma processing method using the above-described plasma processing apparatus will be described with reference to FIG. 2 showing the charge amount of the glass substrate 20 to be processed. An upper surface of a lower electrode 19 provided on an upper end surface of an insulating support base 18 installed on a bottom surface inside the vacuum chamber 1 is provided with a glass substrate 20 for processing, that is, dry etching.
Is placed and set. This glass substrate to be processed 20
Is mounted on a transfer arm (not shown), and is carried into a predetermined position in the center of the vacuum chamber 1 from a substrate entrance (not shown) of the vacuum chamber 1, and then is raised by driving the substrate lift-up unit 24. The substrate lift pins 27 are transferred onto the respective tips of the plurality of substrate lift pins 27, and the substrate lift pins 27 descend and are embedded in the lower electrode 19, thereby being placed on the lower electrode 19.

When the glass substrate 20 to be processed is set on the lower electrode 19 as described above, the inside of the vacuum chamber 1 is driven by the turbo molecular pump 2 and the dry pump 3 through the exhaust port 4. While the air is exhausted, a reaction gas G such as an etching gas or a film forming gas is formed through a large number of gas blowing holes 9 formed in a shower plate 8 forming a bottom surface of the upper electrode 7 also serving as a gas supply unit.
Is introduced. The supply of the reaction gas G to the vacuum chamber 1 is performed from a gas supply source 10 through a primary valve 11, a flow control unit 12 composed of a mass flow controller, and a gas supply system 5 composed of a secondary valve 13 above the upper electrode 7. The gas is supplied to the gas introduction unit 14, and the gas introduction unit 14
The reaction gas G supplied to the gas space 17 including the shower plate 8 and the top surface of the vacuum chamber 1 is introduced into the internal space of the vacuum chamber 1 from the gas outlets 9. Reaction gas G introduced into the vacuum chamber 1
Is an etching gas mainly mixed with, for example, C12 when dry etching is performed.
Is adjusted to a predetermined pressure, for example, about 2 Pa to 10 Pa.

In the atmosphere in which the reaction gas G has been introduced into the above-described vacuum-evacuated internal space of the vacuum chamber 1, the lower electrode 19 is controlled by the control circuit 30 to switch the high-frequency High-frequency power adjusted to 0.3 W / cm ² or more, which is a region contributing to the etching action, is applied from the power supply 21 through the connection terminal 22.
As a result, plasma is excited between the lower electrode 19 and the upper electrode 7 connected to the ground via the connection terminal 23, and the patterned metal wiring film on the glass substrate 20 to be processed is etched. You. The control unit 30
When the end of the dry etching is detected, the supply of the high-frequency power by the high-frequency power supply 21 is stopped, and the supply of the reaction gas G by the gas supply system 5 is also stopped.

During the dry etching, the surface of the glass substrate 20 to be processed is set to a negative potential by the negative reaction gas G, and static electricity is generated between the glass substrate 20 to be processed and the lower electrode 19 by plasma charge-up. As shown in the graph of FIG. 2, t1 at which dry etching was completed
Occasionally, the surface of the glass substrate 20 is charged to a state where it has a very high negative potential (generally minus several hundred volts), and the glass substrate 20 is electrostatically attracted to the lower electrode 19.

Therefore, after the dry etching is completed, a charge removal process for removing electrons charged on the glass substrate 20 to be processed is performed. In this static elimination process, the gas supply system 5 is switched and controlled by the control unit 30 so that an inert gas such as a nitrogen gas or a helium gas that does not contribute to the etching action is removed.
And the pressure of the inert gas is changed stepwise in units of several tens of seconds within a range of about 10 Pa to 80 Pa, which is a region that does not contribute to the etching action. At the same time, the high-frequency power source 21 changes the lower electrode 1 in steps of several tens of seconds within a range of 0.3 W / cm ² or less, where the high-frequency power does not contribute to the etching action.
9. As a result, static elimination plasma is excited in the vacuum chamber 1, and the charge amount of the glass substrate 20 to be processed changes so that the surface potential shifts from a negative potential to a positive potential as shown in FIG. Is completed at t2, the glass substrate 20 to be processed and the lower electrode 19
The electrostatic attraction between them is almost released.

After the neutralization process is completed, the glass substrate 20 to be processed is lifted above the lower electrode 19 by a plurality of substrate raising / lowering pins 27 which are moved upward by driving the substrate lift-up unit 24. 30 controls the switching circuit unit 29 to switch from the high-frequency power supply 21 side to the DC power supply 28 side at t2 when the static elimination process is completed, and to apply a DC voltage of minus several tens volts to the lower electrode 19 from the DC power supply 28. The control is performed so that the substrate lift-up unit 24 is moved upward. This allows
In the glass substrate 20 to be processed, the charge amount decreases in a direction approaching zero as clearly shown in FIG. 2, and the residual charge is almost eliminated. Therefore, when the glass substrate to be processed 20 is lifted above the lower electrode 19 by the substrate elevating pins 27, the occurrence of dielectric breakdown of the insulating thin film due to the occurrence of peeling charging is reliably prevented.

Further, as described above, the glass substrate 20 to be processed
When the battery is removed, a DC voltage is applied to control the charge amount of the glass substrate 20 to be processed so as to approach zero, so that there is no problem even if there is some residual charge at the end of the charge removal process. Therefore, the static elimination process can be performed in a setting that can reliably prevent the occurrence of dielectric breakdown.

In the above-described embodiment, a case has been described in which a DC voltage is applied to the lower electrode 19 only when the glass substrate 20 to be processed is lifted from the lower electrode 19 to prevent separation charging, but dry etching is performed. In some cases,
If the switching circuit 29 is switched and controlled, a DC voltage of a small positive potential (for example, plus several tens of volts) is applied from the DC power supply 28 to the lower electrode 19 while being superimposed on the high-frequency power to excite the plasma. Since the amount of negative potential charge on the glass substrate 20 during dry etching can be greatly reduced, the glass substrate 2
Thus, a large effect can be obtained that can surely prevent dielectric breakdown during the dry etching of the insulating thin film of the device No. 0.

Further, when performing the neutralization process, an inert gas is introduced into the vacuum chamber 1 and, at the same time, the switching circuit section 29 is switched and controlled to generate a minute negative potential (for example, minus several tens volts) from the DC power supply 28. Is applied to the lower electrode 19 while superimposing the DC voltage on the high-frequency power to excite the discharge plasma, the positive potential of the lower electrode 19 to which the glass substrate 20 to be processed is electrostatically adsorbed is applied to the DC voltage. Can be shifted to a negative potential,
The electrostatic attraction of both can be released.

Therefore, during the above-described static elimination process, even if the glass substrate 20 to be processed is lifted by the upward movement of the substrate elevating pins 27 at the same time, the glass substrate 20 to be processed is peeled off from the lower electrode 19. Since no charging occurs, a great effect of improving productivity by simultaneously performing the charge removal process and the step of taking out the glass substrate 20 to be processed can be obtained while reliably preventing dielectric breakdown of the insulating thin film. In short, if a DC voltage is applied to the lower electrode 19 when removing the glass substrate 20 to be processed, an effect of preventing dielectric breakdown of the insulating thin film can be obtained.

FIG. 3 is a schematic longitudinal sectional view showing a plasma processing apparatus which embodies a plasma processing method according to a second embodiment of the present invention. The same reference numerals are given and duplicate description will be omitted. The difference between this plasma processing apparatus and the apparatus shown in FIG. 1 is that the DC power supply 28 and the switching circuit 2 shown in FIG.
Instead of the configuration of FIG. 9, only a configuration in which a pulse generation circuit 32 and a high-frequency pulse generation circuit 33 are provided. Pulse generating circuit 32
Outputs a pulse signal having a cycle of several μs to several ms, for example, a pulse having a cycle of 10 μs to 10 ms. The high-frequency pulse generation circuit 33 generates a high-frequency pulse by pulsing the high-frequency power from the high-frequency power supply 21 by synchronizing the high-frequency power with the output pulse from the pulse generation circuit 32, and connects the high-frequency pulse to the connection terminal 22. Is supplied to the lower electrode 19.

Next, a plasma processing method using the above-described plasma processing apparatus will be described with reference to FIG. 4 showing the charge amount of the glass substrate 20 to be processed. The internal space of the vacuum chamber 1 is set in an atmosphere in which the reaction gas G is introduced while being evacuated by the same operation as in the first embodiment. In this atmosphere, a high-frequency pulse passes through the connection terminal 22 to the lower electrode 19. The pulsed plasma is excited between the lower electrode 19 and the upper electrode 7 connected to the ground via the connection terminal 23, and the pulsed plasma causes the pulsed plasma to excite the glass substrate 2 to be processed.
The patterned metal wiring film on 0 is etched.

The dry etching is performed on the upper and lower electrodes 7, 1
Since the discharge is performed by the pulsed plasma generated by the pulse discharge between 9 and 10, the discharge is synchronized with the high frequency pulse for 10 μs to 10 μs.
ON / OFF is repeated at a cycle of ms. Therefore, the negative potential charged on the glass substrate 20 does not increase linearly because the discharge is intermittently turned off in a short cycle, and the dry etching is terminated as shown in the graph of FIG. The surface potential of the glass substrate to be processed 20 at the time t1 is suppressed to a low negative potential close to zero. Therefore, in this plasma processing method, it is inevitable that the negative potential charged on the glass substrate 20 to be processed during the dry etching exceeds the lower limit threshold value of the insulating thin film of the device, so that the insulating thin film does not break down. Moreover,
Since the pulse discharge only turns off intermittently at extremely short intervals of several tens μs to several tens ms, the pulsed plasma is
It is possible to maintain a state in which no trouble occurs in dry etching of the glass substrate 20 to be processed.

Next, in the charge elimination process, while introducing an inert gas into the vacuum chamber 1, a high frequency pulse is also supplied to the lower electrode 19 to excite the charge elimination plasma. There is no large shift to the positive potential side. Therefore, as shown in FIG. 4, at time t2 when the static elimination plasma ends, the residual charge is almost eliminated, and the surface potential of the glass substrate 20 to be processed becomes a value closer to zero. Therefore, when the glass substrate 20 to be processed is lifted above the lower electrode 19 by the upward movement of the substrate elevating pins 27 after the termination of the charge removal process, there is no residual charge, that is, a state in which the electrostatic attraction is eliminated. Since no peeling charge occurs,
There is no dielectric breakdown of the insulating thin film.

Further, in this embodiment, the surface potential of the processed glass substrate 20 is suppressed to a low negative potential close to zero at t1 when the dry etching is completed. Even if the pin 27 is moved upward to lift the glass substrate 20 to be processed above the lower electrode 19, no separation charging occurs. Therefore, in this embodiment, it is possible to simultaneously perform the charge removal process and the taking-out operation of the glass substrate to be processed, thereby further improving the productivity.

FIG. 5 is a schematic vertical sectional view showing a plasma processing apparatus which embodies a plasma processing method according to a third embodiment of the present invention. In FIG. 5, the same or equivalent to FIG. 1 and FIG. The same components are denoted by the same reference numerals, and redundant description will be omitted. In this plasma processing apparatus, a first high-frequency power supply 34 for supplying high-frequency power to the first electrode 38 via the connection terminal 22 and a coil-shaped electrode portion 40 of the second electrode 39 via the connection terminal 23 are provided. And a second high frequency power supply 37 for supplying high frequency power. The control unit 42 stops driving the first and second high-frequency power supplies 34 and 37 at predetermined timings described later, respectively, from the time point when the end of the dry etching is detected.

The second electrode 39 is connected to the vacuum chamber 1
A dielectric partition plate 41 forming a vacuum-sealed space at the upper end of the inside, the coiled electrode portion 40 disposed on the partition plate 41 in the vacuum-sealed space, and disposed below the partition plate 41 1 and 3 shown in FIG. Note that the first high-frequency power supply 34 is
1 and the first electrode 38 of FIG.
3 and the lower electrode 19 in FIG. 3, respectively, but have different names and different reference numerals for the sake of clarifying the difference between the two configurations.

Next, a plasma processing method using the above-described plasma processing apparatus will be described with reference to FIG. 6 showing the charge amount of the glass substrate 20 to be processed. The internal space of the vacuum chamber 1 is an atmosphere into which the reaction gas G is introduced while being evacuated by the same operation as in the first and second embodiments, and the first electrode 3
8 is supplied with high-frequency power from the first high-frequency power supply 34 and a dielectric partition plate 41 of the second electrode 39.
When the high-frequency power is supplied from the second high-frequency power supply 37 to the coil-shaped electrode portion 40 disposed in the vacuum-sealed space, the inductive coupling occurs between the first and second electrodes 38 and 39. Plasma is generated, and the patterned metal wiring film on the glass substrate 20 to be processed is etched by the inductively coupled plasma. At the time of this dry etching, as shown in FIG. 6, a negative potential charge is charged on the glass substrate 20 to be processed by electrons supplied from the inductively coupled plasma.

The control unit 42 stops driving the first high-frequency power supply 34 at time t1 in FIG. 6 when the end of the dry etching is detected, and when a predetermined time T elapses from the stop time.
At 3:00, the driving of the second high frequency power supply 37 is stopped. Therefore, after the supply of the high-frequency power to the first electrode 38 for charging the surface of the glass substrate 20 to be charged with a negative potential is stopped first, the high-frequency power is applied only to the second electrode 39 during the period from t1 to t3. Since power is supplied, this second
The electric charge of the negative potential on the glass substrate 20 to be processed shifts to the positive potential by the high-frequency power supplied to the electrode 39. Therefore, as shown in FIG. 6, the charge amount of the glass substrate 20 to be processed is greatly reduced during the lapse of the predetermined time T, and approaches zero.

The predetermined time T, which is the time difference between the stoppage of the driving of the high frequency power supplies 34 and 37, is preferably selected and set as appropriate depending on the type and structure of the device formed on the glass substrate 20 to be processed. If the time is set within the range of 0.1 s to 5 s, the predetermined time can be optimized for devices of various types or structures, and the charge amount of the glass substrate 20 to be processed can be reduced to reduce the potential of the surface. Can be almost completely removed. Therefore, in the plasma processing method of this embodiment, there is no need to perform the charge removal process by introducing an inert gas, and after the driving of the second high-frequency power supply 37 is stopped, the substrate elevating pins 27 are raised and the glass to be processed is removed. Even if the substrate 20 is lifted above the first electrode 38, there is no residual charge, and thus no separation charging occurs. More preferably, if the driving of the first high-frequency power supply 34 is stopped, the substrate raising / lowering pins 27 are raised at a timing of t1 to lift the glass substrate 20 to be processed, thereby starting the dielectric breakdown of the insulating thin film. Can be reliably prevented while improving the productivity.

As another plasma processing method using the plasma processing apparatus shown in FIG. 5, as shown by a two-dot chain line in FIG.
And the switching circuit unit 29, and the switching of the switching circuit unit 29 by the control unit 42 controls the DC voltage of the DC power supply 28 at the start of dry etching, at the start of the charge removal process, or at the time of peeling of the glass substrate 20 to be processed. If the voltage is applied to the first electrode 38 at any timing at the time of the start and the driving of the first and second high-frequency power supplies 34 and 37 is stopped simultaneously when the end of the dry etching is detected, The same effect as in the first embodiment can be obtained in a plasma processing apparatus having a configuration in which two types of high-frequency power sources 34 and 37 are provided and the glass substrate 20 to be processed is processed by inductively coupled plasma.

Further, as another plasma processing method using the plasma processing apparatus of FIG. 5, as shown by a two-dot chain line in FIG. A pulse generation circuit 33 for supplying a high-frequency pulse generated by the high-frequency pulse generation circuit 33 based on the high-frequency power of the first high-frequency power supply 34 and the output pulse of the pulse generation circuit 32 to the first electrode 38; If the driving of both the first and second high-frequency power sources 34 and 37 is stopped at the same time when the end of the dry etching is detected, two types of high-frequency power sources 34 and 37 are provided to perform processing by inductively coupled plasma. In the plasma processing apparatus configured to process the glass substrate 20, the same effect as in the second embodiment can be obtained.

[0060]

As described above, according to the plasma processing method of the present invention, when a dielectric substrate such as a large glass substrate is processed by plasma, the dielectric substrate is processed while applying a DC voltage to the electrodes. Means for removing from the electrode, means for processing the dielectric substrate to be processed with plasma excited by supplying high-frequency power superimposed with a DC voltage to the electrode,
A means for processing a dielectric substrate to be processed by pulsed plasma, and a method for processing a dielectric substrate to be processed by inductively coupled plasma, and then a high-frequency power to an electrode on a side on which the dielectric substrate to be processed is attached. By using means for stopping the supply earlier by a predetermined time, the dielectric substrate to be processed is
The device can be removed without any trouble after processing while reliably preventing dielectric breakdown of the insulating thin film of the device formed on the device. Further, according to the plasma processing apparatus of the present invention, various plasma processing methods of the present invention can be faithfully embodied, and the same effect as the processing method can be reliably obtained.

[Brief description of the drawings]

FIG. 1 is a schematic longitudinal sectional view showing a plasma processing apparatus embodying a plasma processing method according to a first embodiment of the present invention.

FIG. 2 is a graph showing a charge amount of a glass substrate to be processed during surface treatment by the plasma processing apparatus.

FIG. 3 is a schematic longitudinal sectional view showing a plasma processing apparatus embodying a plasma processing method according to a second embodiment of the present invention.

FIG. 4 is a graph showing a charge amount of a glass substrate to be processed during surface treatment by the plasma processing apparatus.

FIG. 5 is a schematic longitudinal sectional view showing a plasma processing apparatus embodying a plasma processing method according to a third embodiment of the present invention.

FIG. 6 is a graph showing a charge amount of a glass substrate to be processed during surface treatment by the plasma processing apparatus.

FIG. 7 is a schematic longitudinal sectional view showing a conventional plasma processing apparatus.

8A to 8C are timing charts respectively showing graphs of a charge amount of a glass substrate to be processed, a pressure of a reaction gas, and a high frequency power in the plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Turbo molecular pump (exhaust means) 3 Dry pump (exhaust means) 7 Upper electrode (the other electrode) 9 Gas outlet 19 Lower electrode (one electrode) 20 Glass substrate to be processed (dielectric substrate to be processed) Reference Signs List 21 high-frequency power supply 24 substrate lift-up unit 28 direct-current power supply 30 control unit 32 pulse generation circuit 33 high-frequency pulse generation circuit 34 first high-frequency power supply 37 second high-frequency power supply 38 first electrode 39 second electrode 40 coiled electrode part 41 Partition plate 42 Control part G Reaction gas T Predetermined time

Continued on front page F-term (reference) 4G075 AA24 AA30 AA61 BC02 BC04 BC06 CA47 CA63 DA02 DA03 DA11 EB01 EB42 EC09 EC21 EC25 ED13 4K029 AA09 BD00 BD01 CA05 JA01 4K030 CA06 FA03 FA04 GA01 KA30 LA15 LA18 5F004 AA16 BA09 BA09 BA20

Claims (15)

[Claims] 1. A high-frequency power for plasma generation is supplied to one electrode to which a dielectric substrate to be processed is attached in an atmosphere in which an inner space of a vacuum chamber is evacuated and a reaction gas is introduced into the inner space. A first step of processing the dielectric substrate to be processed by plasma generated between the one electrode and the other electrode opposed thereto; and a processing step of the dielectric substrate to be processed. After the completion, while introducing an inert gas into the vacuum chamber to adjust the pressure to a predetermined value, supplying the high-frequency power to the one electrode to generate a charge-removing plasma, A second step of reducing the amount of charge; and, after the second step, ending the processed dielectric substrate while applying a DC voltage to the one electrode. The plasma processing method characterized in that it comprises a third step of taking out is separated, and from. 2. The plasma processing method according to claim 1, wherein in at least one of the first step and the second step, a DC voltage is superimposed on high-frequency power and supplied to one electrode. 3. A second process, wherein the processed dielectric substrate is separated from the one electrode and taken out while supplying high-frequency power on which a DC voltage is superimposed to one electrode while supplying the high frequency power to the one electrode. 3. The plasma processing method according to claim 1, wherein the number of steps is reduced. 4. An internal space of a vacuum chamber is evacuated to a vacuum, and a high frequency power is applied to one of the electrodes on which the dielectric substrate is mounted in a predetermined period in an atmosphere in which a reaction gas is introduced into the internal space. A high frequency pulse for plasma generation pulsed in synchronization with a signal is supplied, and the dielectric substrate to be processed is processed by pulsed plasma generated between the one electrode and the other electrode opposed thereto. A first step of performing, after the processing of the dielectric substrate to be processed is completed, an inert gas is introduced into the vacuum chamber to adjust the pressure to a predetermined pressure, and the high-frequency pulse is supplied to the one electrode. A second step of generating static elimination plasma to reduce the amount of charge on the dielectric substrate to be processed; and, after the second step, ending the processing of the processed dielectric substrate. The plasma processing method characterized in that it comprises a third step of taking out the physical dielectric substrate is separated from the one electrode. 5. The plasma processing method according to claim 4, wherein a high-frequency pulse is generated using a pulse signal that outputs a pulse at a period of several μs to several ms. 6. The method according to claim 4, wherein, in the second step, the processed dielectric substrate is removed while being separated from the one electrode while generating static elimination plasma, and the third step is reduced. The plasma processing method as described above. 7. A high-frequency power is supplied to a first electrode on which a dielectric substrate to be processed is mounted in an atmosphere in which an inner space of a vacuum chamber is evacuated and a reaction gas is introduced into the inner space, A high-frequency power is supplied to a coiled electrode portion of a second electrode opposed to the first electrode, and the dielectric substrate to be processed is generated by inductively coupled plasma generated between the first and second electrodes. And stopping the supply of high-frequency power from the first high-frequency power supply to the first electrode at the time when the end of the processing of the dielectric substrate to be processed is detected, and stopping the processing. A second step of stopping the supply of high-frequency power from the second high-frequency power supply to the second electrode after a lapse of a predetermined time from a point in time, and after the second step is completed, the processed Treatment The plasma processing method characterized in that it comprises a third step of taking out the dielectric substrate is separated from the first electrode. 8. The method according to claim 1, wherein when the driving of the first high-frequency power supply is stopped, the second
0.1 s for the predetermined time until the high-frequency power supply stops driving
The plasma processing method according to claim 7, wherein the plasma processing method is set within a range of 5 to 5 s. 9. In the second step, when the supply of high-frequency power from the first high-frequency power supply to the first electrode is stopped when the end of the processing of the dielectric substrate to be processed is detected,
The separation operation of the processed dielectric substrate from the first electrode is started while the supply of the high-frequency power from the second high-frequency power supply to the second electrode is continued, and after a lapse of a predetermined time, the second operation is performed. 9. The plasma processing method according to claim 7, wherein the driving of the high-frequency power supply is stopped, and the third step is omitted. 10. An internal space of a vacuum chamber is evacuated to a vacuum and high-frequency power is supplied to a first electrode to which a dielectric substrate to be processed is attached in an atmosphere in which a reaction gas is introduced into the internal space. A high-frequency power is supplied to a coiled electrode portion of a second electrode opposed to the first electrode, and the dielectric substrate to be processed is generated by inductively coupled plasma generated between the first and second electrodes. A driving step of the first and second high-frequency power supplies at the same time when the completion of the processing of the processing target dielectric substrate is detected. Active gas is introduced to adjust the pressure to a predetermined value, and the first and second pressures are adjusted.
A second step of supplying high-frequency power from both high-frequency power supplies to the first and second electrodes to generate static elimination plasma and reduce the charge amount of the dielectric substrate to be processed; A third step of separating the processed dielectric substrate from the first electrode and taking out the processed dielectric substrate while applying a DC voltage only to the electrodes. 11. In at least one of the first step and the second step, a DC voltage is superimposed on the high-frequency power of the first high-frequency power supply and supplied to the first electrode, and in the second step, Introducing an inert gas into the vacuum chamber to adjust the pressure to a predetermined pressure, superimposing a DC voltage on the high-frequency power of the first high-frequency power supply and supplying the DC voltage to the first electrode, and A high-frequency power is supplied to the second electrode to start the operation of separating the processed dielectric substrate from the first electrode while generating static elimination plasma, and to the two electrodes after a lapse of a predetermined time. The plasma processing method according to claim 10, wherein the power supply is stopped, and the third step is omitted. 12. An internal space of a vacuum chamber is evacuated to a vacuum, and a high frequency power is applied to a first electrode on which a dielectric substrate to be processed is applied in a predetermined cycle in an atmosphere in which a reaction gas is introduced into the internal space. A high-frequency pulse that is pulsed in synchronization with a signal is supplied, and a high-frequency power is supplied to a coiled electrode portion of a second electrode opposed to the first electrode, so that the first and second electrodes are supplied. A first step of processing the dielectric substrate to be processed by the inductively coupled plasma generated therebetween, and the first and second high-frequency waves when the end of the processing of the dielectric substrate to be processed is detected. After stopping the driving of the power supply at the same time, an inert gas is introduced into the vacuum chamber to adjust the pressure to a predetermined value, a high-frequency pulse is applied to the first electrode, and the second electrode is A second step of supplying a high-frequency power to generate static elimination plasma, simultaneously with the second step or after completion of the second step. A plasma processing method, wherein the plasma processing method is separated from one electrode and taken out. 13. A vacuum chamber, the inside of which is evacuated by an exhaust means, a first electrode provided inside the vacuum chamber, to which a dielectric substrate to be processed is attached, and a first electrode facing the first electrode. The other electrode provided inside the vacuum chamber in such an arrangement that also serves as a gas supply unit for introducing a reaction gas into the inside of the vacuum chamber from a gas outlet, and a high-frequency power for plasma generation is supplied to the first electrode. A high-frequency power supply to be supplied; a DC power supply to output a predetermined DC power; a substrate lift-up unit for removing the processed dielectric substrate from the first electrode by separating the processed dielectric substrate from the first electrode; The drive of the high-frequency power supply is stopped at the end of the charge removal process by the charge removal plasma after the completion of the processing to the substrate, and the processing of the dielectric substrate to be processed is performed. The DC voltage of the DC power supply is superimposed on the high-frequency power of the high-frequency power supply at any time of the start of the process, the start of the charge removal process, or the start of removal of the dielectric substrate to be processed by the substrate lift-up unit. A plasma processing apparatus comprising: a control unit configured to control supply to the first electrode or supply the DC power to the first electrode as it is. 14. A pulse generating circuit for outputting a pulse with a period of several μs to several ms in place of the DC power supply according to claim 13, and synchronizing high frequency power of a high frequency power supply with an output pulse of the pulse generating circuit. And a high-frequency pulse generation circuit that generates a high-frequency pulse obtained by pulsing the high-frequency power and supplies the high-frequency pulse to the first electrode. 15. A coil-shaped electrode portion disposed in a vacuum sealing space formed by a dielectric partition plate at one end inside a vacuum chamber, instead of the other electrode according to claim 13 or 14. A second high-frequency power supply for supplying high-frequency power to the second electrode; a first high-frequency power supply for supplying high-frequency power to the first electrode to which the dielectric substrate to be processed is attached; A plasma processing apparatus comprising: a control unit that drives and stops the second high-frequency power supply at a predetermined timing.