JP2002355749A - METHOD OF MANUFACTURING SUBSTRATE FOR STAMPER, AND METHOD OF POLISHING Ni ROLLED PLATE - Google Patents
METHOD OF MANUFACTURING SUBSTRATE FOR STAMPER, AND METHOD OF POLISHING Ni ROLLED PLATEInfo
- Publication number
- JP2002355749A JP2002355749A JP2001161363A JP2001161363A JP2002355749A JP 2002355749 A JP2002355749 A JP 2002355749A JP 2001161363 A JP2001161363 A JP 2001161363A JP 2001161363 A JP2001161363 A JP 2001161363A JP 2002355749 A JP2002355749 A JP 2002355749A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- rolled plate
- chemical mechanical
- stamper
- rolled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＣＤ（Compact Di
sc）、ＤＶＤ（Digital Versatile Disc）等の光ディス
クを大量に複製するためのスタンパを製造するために用
いるスタンパ用基板の製造方法及びＮｉ圧延板の研磨方
法に関する。The present invention relates to a CD (Compact Diode).
The present invention relates to a method for manufacturing a stamper substrate used for manufacturing a stamper for copying a large amount of optical disks such as sc) and DVD (Digital Versatile Disc), and a method for polishing a rolled Ni plate.
【０００２】[0002]
【従来の技術】光ディスク用スタンパは一般的に厚さが
０．３ｍｍ程度であり、ピットが転写された情報記録面
をポリカーボネート等の樹脂基板に転写して光ディスク
を製造する。ＤＶＤの場合、ピット長は４００乃至１８
７０ｎｍ、トラックピッチは７４０ｎｍ、ピット高さは
１００ｎｍ程度に達し、極めて微細なパターンを有す
る。従って、スタンパの表面は極めて高い平坦度が要求
される。2. Description of the Related Art An optical disk stamper generally has a thickness of about 0.3 mm, and an optical disk is manufactured by transferring an information recording surface on which pits are transferred to a resin substrate such as polycarbonate. In the case of DVD, the pit length is 400 to 18
It has an extremely fine pattern of 70 nm, a track pitch of 740 nm, and a pit height of about 100 nm. Therefore, the surface of the stamper is required to have extremely high flatness.
【０００３】従来、平坦度の高いスタンパを製造する方
法として、メッキ法がある。メッキ法は以下のようにし
て行われる。精密に研磨し十分に洗浄した平坦なガラス
基板上にフォトレジストを塗布した後、ベーキング処理
によりレジスト膜を該ガラス基板に密着させる。該レジ
スト膜にＮｉ浴中で電鋳メッキを行い、Ｎｉ膜を０．３
ｍｍ程度成長させて、該ガラス基板から剥離することに
よって、十分な平坦度を有するスタンパを製造すること
ができる。Conventionally, there has been a plating method as a method of manufacturing a stamper having a high flatness. The plating method is performed as follows. After applying a photoresist on a flat glass substrate which has been precisely polished and sufficiently washed, a resist film is brought into close contact with the glass substrate by baking treatment. The resist film was subjected to electroforming plating in a Ni bath,
A stamper having a sufficient flatness can be manufactured by growing the substrate about mm and peeling it off from the glass substrate.
【０００４】[0004]
【発明が解決しようとする課題】しかし、メッキ法は、
ガラス基板の研磨、洗浄、前記ガラス基板へのフォトレ
ジスト塗布、Ｎｉのメッキ、Ｎｉ板の剥離という、極め
て煩雑なプロセスが必要である。また、０．３ｍｍ厚の
Ｎｉのメッキを行うための消費電力が大きい。However, the plating method,
Extremely complicated processes such as polishing and cleaning of a glass substrate, application of a photoresist to the glass substrate, plating of Ni, and peeling of a Ni plate are required. Also, the power consumption for plating 0.3 mm thick Ni is large.
【０００５】本発明は斯かる事情に鑑みてなされたもの
であって、その目的とするところは、Ｎｉ圧延板を材料
として、前記Ｎｉ圧延板の表面にラッピング処理を施し
た後に化学機械研磨を施すことにより、表面を十分に平
坦化するスタンパ用基板の製造方法及びＮｉ圧延板の研
磨方法を提供することにある。The present invention has been made in view of such circumstances, and an object of the present invention is to use a Ni rolled plate as a material, perform a lapping treatment on the surface of the Ni rolled plate, and then perform chemical mechanical polishing. An object of the present invention is to provide a method of manufacturing a substrate for a stamper and a method of polishing a Ni rolled plate, by which the surface is sufficiently planarized.
【０００６】[0006]
【課題を解決するための手段】第１発明に係るスタンパ
用基板の製造方法は、所定の大きさに切り出されたＮｉ
圧延板を材料として、該Ｎｉ圧延板に化学機械研磨を施
すことを特徴とする。According to a first aspect of the present invention, there is provided a method of manufacturing a stamper substrate.
The present invention is characterized in that a rolled plate is used as a material, and the Ni rolled plate is subjected to chemical mechanical polishing.
【０００７】第２発明に係るスタンパ用基板の製造方法
は、所定の大きさに切り出されたＮｉ圧延板にラッピン
グ処理を施すことにより粗研磨を行い、粗研磨後のＮｉ
圧延板に化学機械研磨を施すことにより仕上げ研磨を行
うことを特徴とする。In a method of manufacturing a stamper substrate according to a second aspect of the present invention, a Ni rolled plate cut into a predetermined size is subjected to lapping treatment to perform rough polishing, and the Ni after rough polishing is subjected to rough polishing.
The finish polishing is performed by subjecting the rolled plate to chemical mechanical polishing.
【０００８】第３発明に係るスタンパ用基板の製造方法
は、第２発明において、前記粗研磨は、Ｎｉ圧延板の表
面粗さがほぼ１０ｎｍになるまでラッピング処理を施す
ことを特徴とする。[0008] A method of manufacturing a stamper substrate according to a third invention is characterized in that, in the second invention, the rough polishing is performed by lapping until the surface roughness of the Ni rolled plate becomes approximately 10 nm.
【０００９】第４発明に係るスタンパ用基板の製造方法
は、第２発明又は第３発明において、前記仕上げ研磨
は、Ｎｉ圧延板の表面粗さが５ｎｍ以下になるまで化学
機械研磨を施すことを特徴とする。In a fourth aspect of the present invention, in the method of the second or third aspect, the finish polishing is performed by chemical mechanical polishing until the surface roughness of the Ni rolled plate becomes 5 nm or less. Features.
【００１０】第５発明に係るスタンパ用基板の製造方法
は、第２発明乃至第４発明の何れかにおいて、前記化学
機械研磨は、ｐＨ＝９乃至１２の水素イオン濃度の研磨
スラリーを用いることを特徴とする。In a fifth aspect of the present invention, in the method of manufacturing a stamper substrate according to any one of the second to fourth aspects, the chemical mechanical polishing uses a polishing slurry having a hydrogen ion concentration of pH = 9 to 12. Features.
【００１１】第６発明に係るＮｉ圧延板の研磨方法は、
Ｎｉ圧延板にラッピング処理を施し、ラッピング処理後
のＮｉ圧延板に研磨スラリーを用いて化学機械研磨を施
すことを特徴とする。[0011] The method for polishing a Ni rolled plate according to the sixth invention is characterized in that:
The Ni rolled plate is subjected to a lapping process, and the Ni rolled plate after the lapping process is subjected to chemical mechanical polishing using a polishing slurry.
【００１２】第１発明においては、所定の大きさに切り
出されたＮｉ圧延板を材料として、表面に化学機械研磨
を施すことにより、メッキ法に比べて簡単にスタンパ用
基板を得ることができる。In the first invention, a stamper substrate can be obtained more easily than by a plating method by subjecting the surface to chemical mechanical polishing using a Ni rolled plate cut out to a predetermined size as a material.
【００１３】第２発明においては、所定の大きさに切り
出されたＮｉ圧延板の表面研磨を行う工程においてラッ
ピング処理後に化学機械研磨を施すことにより、安価な
圧延板を簡便な研磨方法によって表面の平坦化を行うこ
とができ、光ディスクの製造コストを著しく低減させ
る。In the second invention, in the step of polishing the surface of the Ni rolled plate cut into a predetermined size, chemical mechanical polishing is performed after the lapping treatment, so that an inexpensive rolled plate can be surface-polished by a simple polishing method. Flattening can be performed, which significantly reduces the manufacturing cost of the optical disk.
【００１４】第３発明においては、Ｎｉ圧延板の表面粗
さがほぼ１０ｎｍになるまでラッピング処理を施すこと
によって粗研磨を行うことにより、Ｎｉ圧延板の表面に
ラッピング処理を施さずに化学機械研磨だけを行う場合
に比べて効率よく研磨することができる。In the third invention, the rough polishing is performed by performing a lapping process until the surface roughness of the Ni rolled plate becomes approximately 10 nm, so that the chemical mechanical polishing is performed without performing the lapping process on the surface of the Ni rolled plate. Polishing can be performed more efficiently than in the case where only polishing is performed.
【００１５】第４発明においては、Ｎｉ圧延板の表面粗
さが５ｎｍ以下になるまで化学機械研磨を施すことによ
り、十分な平坦度を有するスタンパ用基板を得ることが
できる。In the fourth invention, a stamper substrate having a sufficient flatness can be obtained by subjecting the Ni rolled plate to chemical mechanical polishing until the surface roughness becomes 5 nm or less.
【００１６】第５発明においては、化学機械研磨に用い
る研磨スラリーとして、ｐＨ＝９乃至１２の水素イオン
濃度の研磨スラリーを用いることにより、Ｎｉ圧延板の
表面が酸化しやすい水素イオン濃度の研磨スラリー中で
表面の酸化膜のみを砥粒が脱離させるために、下地のＮ
ｉ圧延板を傷つけることなく研磨を行うことができる。In the fifth invention, a polishing slurry having a hydrogen ion concentration of pH = 9 to 12 is used as a polishing slurry used for chemical mechanical polishing, so that a polishing slurry having a hydrogen ion concentration at which the surface of a Ni rolled plate is easily oxidized is used. In order to remove only the oxide film on the surface in the
Polishing can be performed without damaging the i-rolled plate.
【００１７】第６発明においては、Ｎｉ圧延板の表面を
ラッピング処理後に化学機械研磨を施すことにより、Ｎ
ｉ圧延板を５ｎｍ以下の表面粗さにまで平坦化すること
ができる。In the sixth invention, the surface of the Ni rolled plate is subjected to chemical mechanical polishing after the lapping treatment, whereby N
The i-rolled plate can be flattened to a surface roughness of 5 nm or less.
【００１８】[0018]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面を参照しながら説明する。Ｎｉ圧延板は例えば
以下のような条件で圧延することにより製造される。Ｎ
ｉを溶解後、連続鋳造にて１５００ｍｍ厚のスラブと
し、そのスラブを４ｍｍ厚に熱延する。さらに、７２０
℃での焼鈍後、酸洗して表面の酸化スケールを除去した
後、０．４ｍｍ厚まで冷間圧延し、再度７２０℃での焼
鈍後、最終厚さの０．３ｍｍに冷間圧延（調質圧延）を
行う。ここで、最後に調質圧延を施すのは、スタンパ用
基板として必要な表面硬度（Ｈｖ＝１５０〜２００）を
得るためである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings showing the embodiments. The Ni rolled plate is manufactured by rolling under the following conditions, for example. N
After melting i, a 1500 mm thick slab is formed by continuous casting, and the slab is hot rolled to a 4 mm thickness. In addition, 720
After annealing at ℃, pickling was carried out to remove oxide scale on the surface, then cold-rolled to a thickness of 0.4 mm, again annealed at 720 ° C, and cold-rolled to a final thickness of 0.3 mm. Quality rolling). Here, the temper rolling is finally performed in order to obtain the surface hardness (Hv = 150 to 200) required for the stamper substrate.
【００１９】このようにして圧延したものを所定の大き
さに切り出して表面を研磨する。図１は、本発明に係る
ラッピング処理を示す説明図である。図１において、３
は定盤を示し、定盤３上にはダイヤモンドの微細粒子が
均一にコーティングされているラッピングフィルム４
（インペリアル印７８０１−２６６７０）が固定されて
いる。定盤３の上方には、定盤３と対向するようにアル
ミナ定盤２が昇降可能に設けられている。アルミナ定盤
２の表面（下面）は精密加工してあり、この表面にＮｉ
圧延板１の裏面を両面テープ等で接着する。定盤３を６
０〜１００ｒｐｍで回転させて、ラッピングフィルム４
に対してアルミナ定盤２に接着したＮｉ圧延板１の表面
を押し付けることによって、Ｎｉ圧延板１の表面を研磨
する。ラッピング処理の潤滑剤には水５を用いる。研磨
時間としてはＮｉ圧延板１の表面粗さがほぼ１０ｎｍに
なるのに必要な時間を予め設定しておく。なお、アルミ
ナ定盤２は特に回転させる必要はないが、研磨中に従動
回転してもよい。The rolled product is cut into a predetermined size and the surface is polished. FIG. 1 is an explanatory diagram showing a wrapping process according to the present invention. In FIG. 1, 3
Denotes a surface plate, and a wrapping film 4 on which a fine diamond particle is uniformly coated on the surface plate 3.
(Imperial mark 7801-26670) is fixed. Above the surface plate 3, an alumina surface plate 2 is provided so as to be able to move up and down so as to face the surface plate 3. The surface (lower surface) of the alumina platen 2 is precision machined, and Ni
The back surface of the rolled plate 1 is bonded with a double-sided tape or the like. Platen 3 to 6
Rotating at 0-100 rpm, wrapping film 4
By pressing the surface of the Ni rolled plate 1 adhered to the alumina platen 2 against the surface, the surface of the Ni rolled plate 1 is polished. Water 5 is used as a lapping lubricant. As the polishing time, a time required for the surface roughness of the Ni rolled plate 1 to become approximately 10 nm is set in advance. The alumina platen 2 does not need to be particularly rotated, but may be driven to rotate during polishing.
【００２０】ラッピング処理により粗研磨を行った後の
Ｎｉ圧延板１に対して、化学機械研磨を施すことにより
仕上げ研磨を行う。図２は、本発明に係る化学機械研磨
を示す説明図である。図２において、６は定盤を示し、
定盤６の上にはアシストパッド７１が、アシストパッド
７１の上にはパッド７２が取り付けられている。アシス
トパッド７１はゴム硬度３０（ＪＩＳ規格）、厚さ１０
ｍｍのＮＢＲゴム製であり、パッド７２は発泡ポリウレ
タンのスエードタイプのもの（（株）フジミインコーポ
レッド社製ＳＵＲＦＩＮ０１８−３）である。定盤６の
上方には、定盤６と対向するようにアルミナ定盤２が昇
降可能に設けられていて、アルミナ定盤２の表面にはラ
ッピング処理後のＮｉ圧延板１の裏面が接着されてい
る。研磨スラリー８としては水素イオン濃度がｐＨ＝１
０．２であり、砥粒８１は平均粒子径６２〜８２ｎｍの
コロイダルシリカが用いられているサファイア基板研磨
用のもの（（株）フジミインコーポレッド社製ＣＯＭＰ
ＯＬ８０）を用いる。定盤６を６０〜１００ｒｐｍで回
転させて、アルミナ定盤２に接着されたラッピング処理
後のＮｉ圧延板１の表面をパッド７２に押し付けて、研
磨スラリー８によって形成されたＮｉ圧延板１の表面の
酸化膜を砥粒８１で脱離させることによって研磨する。
研磨時間を３０分に設定することによりＮｉ圧延板１の
表面粗さは５ｎｍ以下に平坦化される。The final roll is performed by subjecting the Ni rolled plate 1 after the rough polishing by the lapping treatment to chemical mechanical polishing. FIG. 2 is an explanatory view showing chemical mechanical polishing according to the present invention. In FIG. 2, reference numeral 6 denotes a surface plate,
An assist pad 71 is mounted on the surface plate 6, and a pad 72 is mounted on the assist pad 71. The assist pad 71 has a rubber hardness of 30 (JIS standard) and a thickness of 10
The pad 72 is made of foamed polyurethane suede type (SURFIN018-3 manufactured by Fujimi Incorporated). Above the surface plate 6, an alumina surface plate 2 is provided so as to be able to move up and down so as to face the surface plate 6, and the back surface of the Ni rolled plate 1 after the lapping treatment is adhered to the surface of the alumina surface plate 2. ing. The polishing slurry 8 has a hydrogen ion concentration of pH = 1.
The abrasive grain 81 is for polishing a sapphire substrate using colloidal silica having an average particle diameter of 62 to 82 nm (COMP manufactured by Fujimi Incorporated).
OL80) is used. The platen 6 is rotated at 60 to 100 rpm to press the surface of the lapping-processed Ni rolled plate 1 adhered to the alumina platen 2 against the pad 72, and the surface of the Ni rolled plate 1 formed by the polishing slurry 8 The oxide film is removed by abrasive grains 81 to polish.
By setting the polishing time to 30 minutes, the surface roughness of the Ni rolled plate 1 is flattened to 5 nm or less.
【００２１】以上のようなラッピング処理及び化学機械
研磨を施すことによって表面が十分に平坦化されたＮｉ
圧延板１をスタンパ用基板として、このスタンパ用基板
に所望の情報を示すピットを形成してスタンパを製造す
る。The lapping treatment and the chemical mechanical polishing as described above provide Ni whose surface is sufficiently flattened.
Using the rolled plate 1 as a stamper substrate, pits indicating desired information are formed on the stamper substrate to manufacture a stamper.
【００２２】次に、本発明に係る化学機械研磨に用いる
研磨スラリー８のｐＨについて、図３に示す説明図に基
づいて説明する。図３は、横軸に溶液のｐＨをとり、縦
軸に電位をとった、ｐＨ−電位平衡図であり、Ｎｉ圧延
板１の表面の酸化状態を示している。ｐＨ＝９〜１２の
水素イオン濃度の溶液中で、広範な電位範囲においてＮ
ｉ圧延板１の表面に酸化膜を形成することが分かる。本
発明に係る化学機械研磨に用いる研磨スラリー８として
は、ｐＨ＝９〜１２の水素イオン濃度の溶液が適してい
る。Next, the pH of the polishing slurry 8 used for the chemical mechanical polishing according to the present invention will be described with reference to the explanatory diagram shown in FIG. FIG. 3 is a pH-potential equilibrium diagram in which the pH of the solution is plotted on the horizontal axis and the potential is plotted on the vertical axis, and shows the oxidation state of the surface of the Ni rolled plate 1. In a solution with a hydrogen ion concentration of pH = 9 to 12, N
It can be seen that an oxide film is formed on the surface of the i-rolled plate 1. As the polishing slurry 8 used for the chemical mechanical polishing according to the present invention, a solution having a hydrogen ion concentration of pH = 9 to 12 is suitable.
【００２３】図４は、本発明に係る化学機械研磨の研磨
時間に対するＮｉ圧延板１の表面状態の変化を示す説明
図である。横軸に研磨時間をとり、縦軸にＮｉ圧延板１
の表面に形成された酸化膜の厚さ、及び砥粒８１の切り
込み効果による酸化膜の脱離深さをとっている。形成さ
れた酸化膜の厚さと脱離深さとがほぼ同等になる時間
が、研磨スラリー８で形成された酸化膜のみを砥粒８１
によって脱離することができる最適研磨時間であって、
この最適研磨時間においてＮｉ圧延板１の研磨表面は原
子的スケールで平坦化されている。研磨時間が最適研磨
時間よりも短い場合には、形成された酸化膜の厚さより
も脱離深さの方が大きいために、研磨表面にスクラッチ
が残存する。また、研磨時間が最適研磨時間よりも長い
場合には、形成された酸化膜の厚さの方が脱離深さより
も大きいために、研磨表面に酸化膜が残存する。FIG. 4 is an explanatory diagram showing a change in the surface state of the Ni rolled plate 1 with respect to the polishing time of the chemical mechanical polishing according to the present invention. The horizontal axis represents the polishing time, and the vertical axis represents the Ni rolled plate 1
The thickness of the oxide film formed on the surface and the depth of detachment of the oxide film due to the cutting effect of the abrasive grains 81 are taken. The time when the thickness of the formed oxide film is substantially equal to the desorption depth is determined by changing only the oxide film formed by the polishing slurry 8 to the abrasive grains 81.
Optimal polishing time that can be desorbed by
In this optimal polishing time, the polished surface of the Ni rolled plate 1 is flattened on an atomic scale. If the polishing time is shorter than the optimum polishing time, scratches remain on the polished surface because the detachment depth is larger than the thickness of the formed oxide film. If the polishing time is longer than the optimum polishing time, the thickness of the formed oxide film is larger than the desorption depth, so that the oxide film remains on the polished surface.
【００２４】次に、本発明に係る研磨方法を用いて製造
されたスタンパ用基板の表面粗さを示す。図５は、原子
間力顕微鏡によるＮｉ圧延板１の表面粗さの測定結果を
示す説明図である。本発明に係る研磨方法で製造された
スタンパ用基板の表面粗さは２ｎｍ以下で、従来スタン
パとして使用されてきたメッキ板の表面粗さより低く、
メッキ板を製造する際に用いるガラス基板の表面粗さと
ほぼ同等である。Next, the surface roughness of the stamper substrate manufactured by using the polishing method according to the present invention will be described. FIG. 5 is an explanatory diagram showing a measurement result of the surface roughness of the Ni rolled plate 1 by an atomic force microscope. The surface roughness of the stamper substrate manufactured by the polishing method according to the present invention is 2 nm or less, which is lower than the surface roughness of a plating plate conventionally used as a stamper,
It is almost equivalent to the surface roughness of a glass substrate used when manufacturing a plated plate.
【００２５】[0025]
【発明の効果】第１発明によれば、所定の大きさに切り
出されたＮｉ圧延板を材料として、表面に化学機械研磨
を施すことにより、メッキ法に比べて簡単にスタンパ用
基板を得ることができる。According to the first aspect of the present invention, a stamper substrate can be obtained more easily than by a plating method by subjecting a surface of a Ni rolled plate cut to a predetermined size to chemical mechanical polishing. Can be.
【００２６】第２発明によれば、所定の大きさに切り出
されたＮｉ圧延板の表面研磨を行う工程においてラッピ
ング処理後に化学機械研磨を施すことにより、安価な圧
延板を簡便な研磨方法によって表面の平坦化を行うこと
ができ、光ディスクの製造コストを著しく低減させる。According to the second aspect of the present invention, in the step of polishing the surface of the Ni rolled plate cut to a predetermined size, the chemical mechanical polishing is performed after the lapping treatment, so that the inexpensive rolled plate can be surface-polished by a simple polishing method. Can be flattened, and the manufacturing cost of the optical disk can be significantly reduced.
【００２７】第３発明によれば、Ｎｉ圧延板の表面粗さ
がほぼ１０ｎｍになるまでラッピング処理を施すことに
よって粗研磨を行うことにより、Ｎｉ圧延板の表面にラ
ッピング処理を施さずに化学機械研磨だけを行う場合に
比べて効率よく研磨することができる。According to the third aspect of the present invention, the rough polishing is performed by performing a lapping process until the surface roughness of the Ni rolled plate becomes approximately 10 nm. Polishing can be performed more efficiently than when only polishing is performed.
【００２８】第４発明によれば、Ｎｉ圧延板の表面粗さ
が５ｎｍ以下になるまで化学機械研磨を施すことによ
り、十分な平坦度を有するスタンパ用基板を得ることが
できる。According to the fourth invention, a stamper substrate having a sufficient flatness can be obtained by subjecting the Ni rolled plate to chemical mechanical polishing until the surface roughness becomes 5 nm or less.
【００２９】第５発明によれば、化学機械研磨に用いる
研磨スラリーとして、ｐＨ＝９乃至１２の水素イオン濃
度の研磨スラリーを用いることにより、Ｎｉ圧延板の表
面が酸化しやすい水素イオン濃度の研磨スラリー中で表
面の酸化膜のみを砥粒が脱離させるために、下地のＮｉ
圧延板を傷つけることなく研磨を行うことができる。According to the fifth aspect of the present invention, a polishing slurry having a hydrogen ion concentration of pH = 9 to 12 is used as a polishing slurry used for chemical mechanical polishing. In order for the abrasive grains to desorb only the oxide film on the surface in the slurry, the Ni
Polishing can be performed without damaging the rolled plate.
【００３０】第６発明によれば、Ｎｉ圧延板の表面をラ
ッピング処理後に化学機械研磨を施すことにより、Ｎｉ
圧延板を５ｎｍ以下の表面粗さにまで平坦化することが
できる。According to the sixth invention, the Ni rolled plate is subjected to chemical mechanical polishing after lapping, thereby obtaining Ni
The rolled plate can be flattened to a surface roughness of 5 nm or less.
【図１】本発明に係るラッピング処理を示す説明図であ
る。FIG. 1 is an explanatory diagram showing a wrapping process according to the present invention.
【図２】本発明に係る化学機械研磨を示す説明図であ
る。FIG. 2 is an explanatory view showing chemical mechanical polishing according to the present invention.
【図３】本発明に係る化学機械研磨に用いる研磨スラリ
ーのｐＨを示す説明図である。FIG. 3 is an explanatory diagram showing a pH of a polishing slurry used for chemical mechanical polishing according to the present invention.
【図４】本発明に係る化学機械研磨の研磨時間に対する
Ｎｉ圧延板の表面状態の変化を示す説明図である。FIG. 4 is an explanatory diagram showing a change in a surface state of a Ni rolled plate with respect to a polishing time of chemical mechanical polishing according to the present invention.
【図５】原子間力顕微鏡によるＮｉ圧延板の表面粗さの
測定結果を示す説明図である。FIG. 5 is an explanatory diagram showing the results of measuring the surface roughness of a rolled Ni plate using an atomic force microscope.
１ Ｎｉ圧延板 ８ 研磨スラリー ８１ 砥粒 DESCRIPTION OF SYMBOLS 1 Ni rolled plate 8 Polishing slurry 81 Abrasive grains
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C058 AA07 AA09 CA01 CB01 CB10 DA12 5D121 BA01 CA05 CB05 CB08 GG16 GG22 GG30 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C058 AA07 AA09 CA01 CB01 CB10 DA12 5D121 BA01 CA05 CB05 CB08 GG16 GG22 GG30
Claims (6)
を材料として、該Ｎｉ圧延板に化学機械研磨を施すこと
を特徴とするスタンパ用基板の製造方法。1. A method for manufacturing a stamper substrate, wherein a Ni rolled plate cut into a predetermined size is used as a material and the Ni rolled plate is subjected to chemical mechanical polishing.
にラッピング処理を施すことにより粗研磨を行い、粗研
磨後のＮｉ圧延板に化学機械研磨を施すことにより仕上
げ研磨を行うことを特徴とするスタンパ用基板の製造方
法。2. A rough polishing is performed by performing a lapping process on a Ni rolled plate cut out to a predetermined size, and a finish polishing is performed by performing a chemical mechanical polishing on the Ni rolled plate after the rough polishing. Manufacturing method for a stamper substrate.
ほぼ１０ｎｍになるまでラッピング処理を施すことを特
徴とする請求項２記載のスタンパ用基板の製造方法。3. The method for manufacturing a stamper substrate according to claim 2, wherein the rough polishing is performed by lapping until the surface roughness of the Ni rolled plate becomes approximately 10 nm.
さが５ｎｍ以下になるまで化学機械研磨を施すことを特
徴とする請求項２又は３記載のスタンパ用基板の製造方
法。4. The method for manufacturing a stamper substrate according to claim 2, wherein the finish polishing is performed by chemical mechanical polishing until the surface roughness of the Ni rolled plate becomes 5 nm or less.
の水素イオン濃度の研磨スラリーを用いることを特徴と
する請求項２乃至４の何れかに記載のスタンパ用基板の
製造方法。5. The chemical mechanical polishing method according to claim 1, wherein the pH is 9 to 12.
The method for producing a stamper substrate according to claim 2, wherein a polishing slurry having a hydrogen ion concentration of (a) is used.
ッピング処理後のＮｉ圧延板に研磨スラリーを用いて化
学機械研磨を施すことを特徴とするＮｉ圧延板の研磨方
法。6. A method for polishing a rolled Ni plate, comprising: lapping a Ni rolled plate; and performing chemical mechanical polishing on the wrapped Ni rolled plate using a polishing slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161363A JP3885518B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of stamper substrate and polishing method of Ni rolled plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161363A JP3885518B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of stamper substrate and polishing method of Ni rolled plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002355749A true JP2002355749A (en) | 2002-12-10 |
| JP3885518B2 JP3885518B2 (en) | 2007-02-21 |
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ID=19004655
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|---|---|---|---|
| JP2001161363A Expired - Fee Related JP3885518B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of stamper substrate and polishing method of Ni rolled plate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107335A1 (en) * | 2003-05-29 | 2004-12-09 | Sumitomo Metal Industries, Ltd. | Stamper substrate and process for producing the same |
| JP2005314761A (en) * | 2004-04-30 | 2005-11-10 | Kida Seiko Kk | Method for manufacturing substrate of stamper for optical disk, and electroformed article |
| JP2006142772A (en) * | 2004-11-24 | 2006-06-08 | Sony Corp | Mold and its manufacturing method, and method for forming pattern |
| EP1564735A3 (en) * | 2004-01-08 | 2007-01-10 | Komag, Inc. | Method and apparatus for making a stamper for patterning CDs and DVDs |
| CN100449625C (en) * | 2005-08-15 | 2009-01-07 | 精碟科技股份有限公司 | CD of using beam in blue light |
| JP2011162364A (en) * | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | Method for processing sapphire substrate |
-
2001
- 2001-05-29 JP JP2001161363A patent/JP3885518B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107335A1 (en) * | 2003-05-29 | 2004-12-09 | Sumitomo Metal Industries, Ltd. | Stamper substrate and process for producing the same |
| EP1564735A3 (en) * | 2004-01-08 | 2007-01-10 | Komag, Inc. | Method and apparatus for making a stamper for patterning CDs and DVDs |
| JP2005314761A (en) * | 2004-04-30 | 2005-11-10 | Kida Seiko Kk | Method for manufacturing substrate of stamper for optical disk, and electroformed article |
| JP2006142772A (en) * | 2004-11-24 | 2006-06-08 | Sony Corp | Mold and its manufacturing method, and method for forming pattern |
| JP4595505B2 (en) * | 2004-11-24 | 2010-12-08 | ソニー株式会社 | Mold, manufacturing method thereof, and pattern forming method |
| CN100449625C (en) * | 2005-08-15 | 2009-01-07 | 精碟科技股份有限公司 | CD of using beam in blue light |
| JP2011162364A (en) * | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | Method for processing sapphire substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3885518B2 (en) | 2007-02-21 |
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