JP2002340832A - Semiconductor device, manufacturing method for semiconductor device, gas sensor and manufacturing method for gas sensor - Google Patents

Semiconductor device, manufacturing method for semiconductor device, gas sensor and manufacturing method for gas sensor

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Publication number
JP2002340832A
JP2002340832A JP2001152076A JP2001152076A JP2002340832A JP 2002340832 A JP2002340832 A JP 2002340832A JP 2001152076 A JP2001152076 A JP 2001152076A JP 2001152076 A JP2001152076 A JP 2001152076A JP 2002340832 A JP2002340832 A JP 2002340832A
Authority
JP
Japan
Prior art keywords
electrode
heater
lead wire
wire
sensitive body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001152076A
Other languages
Japanese (ja)
Inventor
Shigeru Sasabe
笹部　　茂
Yoshikatsu Inoue
義勝 井上
Akiyoshi Hattori
章良 服部
Nobuyuki Yoshiike
信幸 吉池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Refrigeration Co
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Refrigeration Co, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Refrigeration Co
Priority to JP2001152076A priority Critical patent/JP2002340832A/en
Publication of JP2002340832A publication Critical patent/JP2002340832A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a gas sensor having little possibility of breaking a lead wire, allowing the use of a lead wire having small line diameter and low rigidity, and capable of reducing the power consumption. SOLUTION: The lead wire 6 is joined to a heater electrode 3 and a sensitive body electrode 8 by an ultrasonic thermo compression bonding, whereby as compared with the case of joining the lead wire to the electrode by another general welding method, the wire 6 is hard to break, so that the lead wire 6 having a small wire diameter and low rigidity can be used. The use of the lead wire 6 having a small wire diameter can reduce radiation due to heat transmitted to the lead wire 6, so that the power consumption of a heater for heating the sensitive body membrane 9 to a designated temperature can be reduced.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、絶縁性基板上の電
極にリード線ワイヤを接合した半導体装置と、その半導
体装置の製造方法と、各種ガスの識別や濃度感知に用い
る半導体方式のガスセンサと、そのガスセンサの製造方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a lead wire is bonded to an electrode on an insulating substrate, a method of manufacturing the semiconductor device, and a semiconductor gas sensor used for identifying various gases and sensing concentration. And a method for manufacturing the gas sensor.

【０００２】[0002]

【従来の技術】従来よりガスセンサとして、酸化スズ
（SnO2）や酸化亜鉛（ZnＯ）等の金属酸化物半導体を用
いるものが知られている。2. Description of the Related Art Conventionally, a gas sensor using a metal oxide semiconductor such as tin oxide (SnO 2 ) or zinc oxide (ZnO) has been known.

【０００３】これら金属酸化物半導体は、大気中におい
て３００℃から５００℃程度に加熱されると、粒子表面
近傍の酸素が活性化されて、粒子表面に吸着し金属酸化
物自身が高抵抗状態になる。[0003] When these metal oxide semiconductors are heated in the air from about 300 ° C to about 500 ° C, oxygen near the particle surface is activated, adsorbed on the particle surface, and the metal oxide itself becomes a high resistance state. Become.

【０００４】そして、この状態において、プロパン、エ
チレン等の還元性ガスである被検ガス中に暴露される
と、還元性ガス分子が吸着していた酸素と反応し、粒子
内部へ電子が供給されることで、抵抗値が減少する。In this state, when exposed to a test gas which is a reducing gas such as propane or ethylene, the reducing gas molecules react with the adsorbed oxygen, and electrons are supplied into the particles. By doing so, the resistance value decreases.

【０００５】このような性質を利用して金属酸化物半導
体を用いたガスセンサが、ガス漏れ讐報器、空気清浄
器、におい検知器等の様々な分野で利用されている。Gas sensors using metal oxide semiconductors utilizing such properties have been used in various fields such as gas leak vengeers, air purifiers, and odor detectors.

【０００６】このような従来の酸化物半導体方式のガス
センサの一例として、特開平８−９４５６３号公報に開
示されているものがある。An example of such a conventional oxide semiconductor gas sensor is disclosed in Japanese Patent Application Laid-Open No. Hei 8-94563.

【０００７】以下、図面を参照しながら上記従来のガス
センサについて説明する。図６は従来のガスセンサの上
面図、図７は従来のガスセンサの底面図である。Hereinafter, the conventional gas sensor will be described with reference to the drawings. FIG. 6 is a top view of a conventional gas sensor, and FIG. 7 is a bottom view of the conventional gas sensor.

【０００８】図６において、１はアルミナ基板、２はRu
Ｏ2から成るヒータ、３はヒータ用電極、４はヒータ側
電極パッド、５は感応体側電極パッドである。ヒータ側
電極パッド４及び感応体側電極パッド５は、リード線ワ
イヤ６との接合部であり、電極と接続されている。電極
３やヒータ側電極パッド４、感床体側電極パッド５の材
質は、同じプロセスで同時に形成されているため同じ白
金を主成分としたものとなっている。In FIG. 6, 1 is an alumina substrate, 2 is Ru.
A heater made of O 2 , 3 is a heater electrode, 4 is a heater electrode pad, and 5 is a sensitive body electrode pad. The heater-side electrode pad 4 and the sensitive-body-side electrode pad 5 are joints with the lead wire 6 and are connected to the electrodes. The material of the electrode 3, the heater-side electrode pad 4, and the floor-sensing body-side electrode pad 5 is made of the same platinum as the main component because they are formed simultaneously by the same process.

【０００９】さらに、リード線ワイヤ６は、Pt−Ｗある
いはPt−ZrＯ2の貴金属合金線を用いている。７はAuペ
ーストで、パッド４，５上でリード線ワイヤ６の接合部
を被覆している。Furthermore, the lead wire 6, is used a noble metal alloy wire Pt-W, or Pt-ZrO 2. Numeral 7 denotes an Au paste which covers the joints of the lead wires 6 on the pads 4 and 5.

【００１０】図７に示すように、基板１の裏面には白金
から成る感応体用電極８とSnO2等の金属酸化物半導体で
ある感応体膜９が形成されている。As shown in FIG. 7, on a back surface of the substrate 1, a sensitive body electrode 8 made of platinum and a sensitive body film 9 made of a metal oxide semiconductor such as SnO 2 are formed.

【００１１】また、図８に示すように、感応体用電極８
は基板１の２箇所の角部に設けた導電体膜１０を介して
パッド５に接続されている。Also, as shown in FIG.
Are connected to the pads 5 via conductor films 10 provided at two corners of the substrate 1.

【００１２】以上のように構成された従来のガスセンサ
について、以下その動作を説明する。ヒータ２及び感応
体膜９には、直流電源（図示せず）からリード線ワイヤ
６を通じて一定の電圧が供給される。The operation of the conventional gas sensor configured as described above will be described below. A constant voltage is supplied to the heater 2 and the sensitive film 9 from a DC power supply (not shown) through the lead wire 6.

【００１３】そして、ヒータ２の発熱により感応体膜９
は３００℃から５００℃に保持される。このとき、感応
体であるSnO2の粒子表面には大気中の酸素が活性化され
た後、吸着し高抵抗状態になる。The heat generated by the heater 2 causes the sensitive film 9
Is maintained at 300 ° C. to 500 ° C. At this time, oxygen in the atmosphere is activated on the surface of the SnO 2 particles serving as the sensitizer, and then adsorbs to a high resistance state.

【００１４】そして、ガスセンサがプロパン、エチレン
等の還元性ガスである被検ガス中に暴露されると、還元
性ガス分子が吸着していた酸素と反応し、粒子内部へ電
子が供給されることで抵抗値が減少する。この低抗値の
変化が感応体膜９と直列につながれた固定抵抗部で電圧
の変化量としてセンサ外部へ出力される。When the gas sensor is exposed to a test gas which is a reducing gas such as propane or ethylene, the reducing gas molecules react with the adsorbed oxygen to supply electrons into the particles. Decreases the resistance value. This change in the low resistance value is output to the outside of the sensor as a voltage change amount by a fixed resistor connected in series with the sensitive film 9.

【００１５】また、このような構成の従来のガスセンサ
は、その製造において、ヒータ用電極３、ヒータ側電極
パッド４、感応体側電極パッド５、ヒータ２、感応体用
電極８、感応体膜９を形成した後で、溶接によりヒータ
側電極パッド４、感床体側電極パッドにリード線ワイヤ
６が接合される。そして、Auペーストで接合部を被覆し
焼成される。In the conventional gas sensor having such a configuration, the heater electrode 3, the heater-side electrode pad 4, the sensitive body-side electrode pad 5, the heater 2, the sensitive body electrode 8, and the sensitive body film 9 are manufactured in the manufacture thereof. After the formation, the lead wire 6 is joined to the heater-side electrode pad 4 and the floor-sensing body-side electrode pad by welding. Then, the bonding portion is covered with Au paste and fired.

【００１６】[0016]

【発明が解決しようとする課題】しかしながら、上記従
来の構成では、リード線ワイヤ６が溶接によってパッド
４，５に接合されていることから、センサのヒータ消費
電力の低減を図るに当たって線径が細いリード線ワイヤ
を用いる場合、剛性の低いワイヤでは破断しやすく製造
工程での歩留まりの間題があり、生産効率が悪いという
課題があった。However, in the above-mentioned conventional configuration, since the lead wire 6 is joined to the pads 4 and 5 by welding, the wire diameter is small in order to reduce the power consumption of the heater of the sensor. When a lead wire is used, a wire having a low rigidity is apt to be broken, and there is a problem with a yield in a manufacturing process, and there is a problem that production efficiency is poor.

【００１７】本発明は、上記従来の課題を解決するもの
で、リード線ワイヤが破断し難く、線径が細く剛性の低
いリード線ワイヤの使用が可能な半導体装置を提供する
ことを目的とする。An object of the present invention is to provide a semiconductor device which solves the above-mentioned conventional problems and in which a lead wire is hardly broken, a wire diameter is small and a rigid wire having low rigidity can be used. .

【００１８】また、本発明は、上記従来の課題を解決す
るもので、製造工程でワイヤが破断し難く、生産効率を
向上でき、線径が細く剛性の低いリード線ワイヤを使用
しても比較的ワイヤが破断し難い半導体装置の製造方法
を提供することを目的とする。Further, the present invention solves the above-mentioned conventional problems, and it is difficult to break a wire in a manufacturing process, it is possible to improve production efficiency, and even if a lead wire having a small wire diameter and low rigidity is used. It is an object of the present invention to provide a method of manufacturing a semiconductor device in which a target wire is hardly broken.

【００１９】また、本発明は、上記従来の課題を解決す
るもので、ワイヤの破断可能性が少なく、線径が細く剛
性の低いリード線ワイヤの使用が可能で、消費電力を低
減できるガスセンサを提供することを目的とする。Further, the present invention solves the above-mentioned conventional problems, and provides a gas sensor which can reduce the power consumption by reducing the possibility of breakage of the wire, making it possible to use a lead wire having a small wire diameter and low rigidity. The purpose is to provide.

【００２０】また、本発明は、上記従来の課題を解決す
るもので、線径が細く剛性の低いリード線ワイヤを使用
しても、製造工程で比較的ワイヤが破断し難く、生産効
率を向上でき、線径が細いリード線ワイヤを使用して、
消費電力を低減できるガスセンサの製造方法を提供する
ことを目的とする。Further, the present invention solves the above-mentioned conventional problems. Even when a lead wire having a small wire diameter and low rigidity is used, the wire is relatively hard to break in the manufacturing process, and the production efficiency is improved. Using small lead wire,
An object of the present invention is to provide a method for manufacturing a gas sensor that can reduce power consumption.

【００２１】また、さらに、製造工程での生産効率を向
上すると共に、使用時の振動の影響によるワイヤ接合部
の破断による断線を防止し、信頼性を向上することがで
きる半導体装置とその製造方法を提供することを目的と
する。Furthermore, a semiconductor device and a method of manufacturing the same which can improve the production efficiency in the manufacturing process, prevent disconnection due to breakage of a wire joint due to the influence of vibration during use, and improve reliability. The purpose is to provide.

【００２２】また、さらに、製造工程での生産効率を向
上すると共に、センサ使用時の振動の影響によるワイヤ
接合部の破断による断線を防止し、信頼性を向上するこ
とができるガスセンサとその製造方法を提供することを
目的とする。Further, a gas sensor capable of improving the production efficiency in the manufacturing process, preventing disconnection due to breakage of a wire joint due to the influence of vibration during use of the sensor, and improving reliability, and a method of manufacturing the same. The purpose is to provide.

【００２３】[0023]

【課題を解決するための手段】本発明の請求項１に記載
の半導体装置の発明は、電極を絶縁性基板上に設け、リ
ード線ワイヤを前記電極に接合した半導体装置であっ
て、前記リード線ワイヤは、前記電極に超音波熱圧着に
よって接合されているものであり、微弱な熱によりリー
ド線ワイヤを電極に接合したので、スポット溶接のよう
に約１００Ｖの高電圧により電気的に溶接した場合に比
べて、ワイヤが破断し難く、線径が細く剛性の低いリー
ド線ワイヤの使用が可能となるという作用を有する。According to a first aspect of the present invention, there is provided a semiconductor device in which an electrode is provided on an insulating substrate and a lead wire is joined to the electrode. The wire wire was joined to the electrode by ultrasonic thermocompression bonding. Since the lead wire was joined to the electrode by weak heat, it was electrically welded by a high voltage of about 100 V like spot welding. Compared to the case, the wire is less likely to break, and has an effect that a lead wire having a small wire diameter and low rigidity can be used.

【００２４】また、請求項２に記載の半導体装置の発明
は、請求項１記載の発明において、リード線ワイヤの接
合部が導電性ペーストで固定されているものであり、リ
ード線ワイヤの接合部が導電性ペーストで固定されてい
るため、接合部でのリード線ワイヤの接合強度が向上す
るという作用を有する。According to a second aspect of the present invention, there is provided the semiconductor device according to the first aspect, wherein the joint of the lead wire is fixed with a conductive paste. Is fixed by the conductive paste, so that the bonding strength of the lead wire at the bonding portion is improved.

【００２５】また、請求項３に記載の半導体装置の発明
は、請求項１または請求項２記載の発明において、電極
は、有機金属化合物から成る薄膜電極を介して絶縁性基
板上に設けられているものであり、リード線ワイヤを接
合する電極と絶縁性基板との間に、リード線ワイヤを接
合する電極と絶縁性基板との両方に密着性の高い有機金
属化合物から成る薄膜電極を形成したので、使用時の振
動の影響によって、絶縁性基板からワイヤ接合部分の電
極が剥離する可能性を少なくし、半導体装置の信頼性が
向上するという作用を有する。According to a third aspect of the present invention, there is provided a semiconductor device according to the first or second aspect, wherein the electrode is provided on the insulating substrate via a thin film electrode made of an organometallic compound. A thin film electrode made of an organometallic compound having high adhesion to both the electrode joining the lead wire and the insulating substrate was formed between the electrode joining the lead wire and the insulating substrate. Therefore, there is an effect that the possibility that the electrode at the wire bonding portion is separated from the insulating substrate due to the influence of vibration during use is reduced, and the reliability of the semiconductor device is improved.

【００２６】また、請求項４に記載の半導体装置の製造
方法の発明は、電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合する
ものであり、微弱な熱によりリード線ワイヤを電極に接
合するので、スポット溶接のように約１００Ｖの高電圧
により電気的に溶接する場合に比べて、製造工程でワイ
ヤが破断し難く、生産効率を向上でき、線径が細く剛性
の低いリード線ワイヤを使用しても比較的ワイヤが破断
し難いという作用を有する。According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: providing an electrode on an insulating substrate; and bonding a lead wire to the electrode by ultrasonic thermocompression bonding. Since the lead wire is joined to the electrode by weak heat, the wire is less likely to break in the manufacturing process than in the case of electrical welding with a high voltage of about 100V, such as spot welding, and the production efficiency can be improved. Even when a lead wire having a small wire diameter and low rigidity is used, the wire is relatively hard to break.

【００２７】また、請求項５に記載の半導体装置の製造
方法の発明は、電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合し、
さらに、前記リード線ワイヤの接合部を導電性ペースト
で固定するものであり、超音波熱圧着によって電極に接
合したリード線ワイヤの接合部を導電性ペーストで固定
するので、接合部でのリード線ワイヤの接合強度が向上
するという作用を有する。According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device, after the electrodes are provided on the insulating substrate, the lead wires are joined to the electrodes by ultrasonic thermocompression bonding.
Further, the bonding portion of the lead wire is fixed with a conductive paste, and the bonding portion of the lead wire bonded to the electrode by ultrasonic thermocompression bonding is fixed with the conductive paste. This has the effect of improving the bonding strength of the wire.

【００２８】また、請求項６に記載の半導体装置の製造
方法の発明は、請求項４または請求項５記載の発明にお
いて、電極を、予め絶縁性基板上に設けた有機金属化合
物から成る薄膜電極の上に設けるものであり、予め絶縁
性基板上に、リード線ワイヤを接合する電極と絶縁性基
板との両方に密着性の高い有機金属化合物から成る薄膜
電極を設け、リード線ワイヤを接合する電極をその薄膜
電極の上に設けるため、振動の影響によって、絶縁性基
板からワイヤ接合部分の電極が剥離する可能性を少なく
し、半導体装置の信頼性が向上するという作用を有す
る。According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the fourth or fifth aspect, wherein the electrode is formed of an organometallic compound in which an electrode is provided on an insulating substrate in advance. And a thin film electrode made of an organometallic compound having high adhesion to both the electrode for bonding the lead wire and the insulating substrate is provided on the insulating substrate in advance, and the lead wire is bonded. Since the electrode is provided on the thin-film electrode, the possibility that the electrode at the wire bonding portion peels off from the insulating substrate due to the influence of vibration is reduced, and the reliability of the semiconductor device is improved.

【００２９】また、請求項７に記載のガスセンサの発明
は、ヒータと、前記ヒータに電気的に接続される一対の
ヒータ用電極と、前記ヒータの発熱により所定温度に加
熱され被検ガス中に暴露されると抵抗値が減少する感応
体膜と、前記感応体膜に電気的に接続される一対あるい
は複数対の感応体用電極とを、絶縁性基板上に設け、リ
ード線ワイヤを前記ヒータ用電極と前記感応体用電極と
に接合したガスセンサであって、前記リード線ワイヤ
は、前記ヒータ用電極と前記感応体用電極とに超音波熱
圧着によって接合されているものであり、微弱な熱によ
りリード線ワイヤをヒータ用電極と感応体用電極とに接
合したので、スポット溶接のように約１００Ｖの高電圧
により電気的に溶接した場合に比べて、ワイヤが破断し
難く、線径が細く剛性の低いリード線ワイヤの使用が可
能となり、線径が細いリード線ワイヤを使用することに
より、リード線ワイヤを伝わる熱による放熱が少なくな
り、感応体膜を所定温度に加熱するヒータの消費電力を
低減できるという作用を有する。Further, according to the invention of a gas sensor according to a seventh aspect of the present invention, there is provided a heater, a pair of heater electrodes electrically connected to the heater, and a heater which is heated to a predetermined temperature by the heat generated by the heater and is contained in the test gas. A sensitive body film whose resistance value decreases when exposed, and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film are provided on an insulating substrate, and a lead wire is connected to the heater. A gas sensor joined to the electrode for sensing and the electrode for sensitive body, wherein the lead wire is joined to the electrode for heater and the electrode for sensitive body by ultrasonic thermocompression bonding, Since the lead wire was joined to the heater electrode and the sensitive body electrode by heat, the wire was less likely to break and the wire diameter was smaller than when the electrode wire was electrically welded with a high voltage of about 100 V like spot welding. Thin and rigid The use of a lead wire with a small wire diameter reduces the heat dissipation due to the heat transmitted through the lead wire, and reduces the power consumption of the heater that heats the sensitive film to a predetermined temperature. It has the effect of being able to reduce.

【００３０】また、請求項８に記載のガスセンサの発明
は、請求項７記載の発明において、リード線ワイヤの線
径が２０μｍ以上かつ６０μｍ以下であるものであり、
リード線ワイヤの線径が６０μｍ以下と細いことから断
面積が小さくなることで、ヒータからリード線ワイヤを
通じての熱伝導が低減される。これにより感応体薄膜を
保持温度に保つヒータの消費電力が低減されるという作
用を有する。また、線径が２０μｍ以上であるため、超
音波熱圧着によってリード線ワイヤを破断する可能性が
少なくほぼ確実に接合ができるという作用を有する。According to an eighth aspect of the present invention, in the gas sensor according to the seventh aspect, the wire diameter of the lead wire is not less than 20 μm and not more than 60 μm.
Since the wire diameter of the lead wire is as thin as 60 μm or less, the cross-sectional area is reduced, so that heat conduction from the heater through the lead wire is reduced. This has the effect of reducing the power consumption of the heater that keeps the sensitive element thin film at the holding temperature. In addition, since the wire diameter is 20 μm or more, there is little possibility of breakage of the lead wire by ultrasonic thermocompression bonding, so that there is an effect that bonding can be performed almost certainly.

【００３１】また、請求項９に記載のガスセンサの発明
は、請求項７または請求項８記載の発明において、リー
ド線ワイヤをAu−Pd合金線としたものであり、Au−Pd合
金線熱は伝導率が小さく高剛性であるため、リード線ワ
イヤにAu−Pd合金線を用いることにより、Au−Pd合金線
の伝導率が小さいという特性からリード線ワイヤを伝わ
る熱による放熱が少なくなり、感応体膜を所定温度に加
熱するヒータの消費電力を低減でき、Au−Pd合金線の高
剛性という特性から、ワイヤ強度が確保できワイヤ自身
の断線が起こりにくく、線径が細いリード線ワイヤの使
用が可能となり、線径が細いリード線ワイヤを使用すれ
ば、さらにヒータの消費電力を低減できるという作用を
有する。According to a ninth aspect of the present invention, in the gas sensor according to the seventh or eighth aspect, the lead wire is an Au-Pd alloy wire, and the heat of the Au-Pd alloy wire is Since the conductivity is small and the rigidity is high, the use of Au-Pd alloy wire for the lead wire reduces the heat radiation due to the heat transmitted through the lead wire due to the low conductivity of the Au-Pd alloy wire. The power consumption of the heater that heats the body film to a predetermined temperature can be reduced, and due to the high rigidity of the Au-Pd alloy wire, the wire strength can be secured, the wire itself is not easily broken, and the wire diameter is small. When a lead wire having a small wire diameter is used, the power consumption of the heater can be further reduced.

【００３２】また、請求項１０に記載のガスセンサの発
明は、請求項７から請求項９のいずれか一項に記載の発
明において、リード線ワイヤの接合部が導電性ペースト
で固定されているものであり、リード線ワイヤの接合部
が導電性ペーストで固定されているため、接合部でのリ
ード線ワイヤの接合強度が向上するという作用を有す
る。According to a tenth aspect of the present invention, there is provided the gas sensor according to any one of the seventh to ninth aspects, wherein the bonding portion of the lead wire is fixed with a conductive paste. Since the bonding portion of the lead wire is fixed by the conductive paste, the bonding wire has an effect of improving the bonding strength of the lead wire at the bonding portion.

【００３３】また、請求項１１に記載のガスセンサの発
明は、請求項７から請求項１０のいずれか一項に記載の
発明において、ヒータ用電極と感応体用電極とは、有機
金属化合物から成る薄膜電極を介して絶縁性基板上に設
けられているものであり、リード線ワイヤを接合する電
極と絶縁性基板との間に、リード線ワイヤを接合する電
極と絶縁性基板との両方に密着性の高い有機金属化合物
から成る薄膜電極を形成したので、センサ使用時の振動
の影響によって、絶縁性基板からワイヤ接合部分の電極
が剥離する可能性を少なくし、ガスセンサの信頼性が向
上するという作用を有する。[0033] In the gas sensor according to the eleventh aspect, in the invention according to any one of the seventh to tenth aspects, the heater electrode and the sensitive body electrode are made of an organometallic compound. It is provided on an insulating substrate via a thin film electrode, and is in close contact with both the electrode connecting the lead wire and the insulating substrate between the electrode connecting the lead wire and the insulating substrate. Since the thin-film electrode made of highly organometallic compound is formed, the possibility of the electrode at the wire joint part peeling off from the insulating substrate due to the influence of vibration during use of the sensor is reduced, and the reliability of the gas sensor is improved. Has an action.

【００３４】また、請求項１２に記載のガスセンサの製
造方法の発明は、ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、リード線ワイヤを、超音波熱圧着によっ
て前記ヒータ用電極と前記感応体用電極とに接合するも
のであり、微弱な熱によりリード線ワイヤを電極に接合
するので、スポット溶接のように約１００Ｖの高電圧に
より電気的に溶接する場合に比べて、製造工程でワイヤ
が破断し難く、生産効率を向上でき、線径が細く剛性の
低いリード線ワイヤの使用が可能となり、線径が細いリ
ード線ワイヤを使用することにより、リード線ワイヤを
伝わる熱による放熱が少なくなり、感応体膜を所定温度
に加熱するヒータの消費電力を低減できるという作用を
有する。According to a twelfth aspect of the invention, there is provided a method for manufacturing a gas sensor, comprising: a heater; a pair of heater electrodes electrically connected to the heater; After providing a sensitive body film whose resistance value decreases when exposed to a gas and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead is provided. A wire wire is joined to the electrode for heater and the electrode for sensitive body by ultrasonic thermocompression bonding, and the lead wire is joined to the electrode by weak heat. Compared to the case of electrical welding by voltage, wires are less likely to break during the manufacturing process, production efficiency can be improved, and lead wires with small diameter and low rigidity can be used, and lead wires with small diameter can be used. use By, has the effect of reduced heat dissipation due to heat transmitted leads wire can reduce the power consumption of the heater for heating the sensitive film to a predetermined temperature.

【００３５】また、請求項１３に記載のガスセンサの製
造方法の発明は、ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、リード線ワイヤを、超音波熱圧着によっ
て前記ヒータ用電極と前記感応体用電極とに接合し、さ
らに、前記リード線ワイヤの接合部を導電性ペーストで
固定するものであり、超音波熱圧着によって電極に接合
したリード線ワイヤの接合部を導電性ペーストで固定す
るので、接合部でのリード線ワイヤの接合強度が向上す
るという作用を有する。According to a thirteenth aspect of the present invention, there is provided a gas sensor manufacturing method, comprising: a heater; a pair of heater electrodes electrically connected to the heater; After providing a sensitive body film whose resistance value decreases when exposed to a gas and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead is provided. A wire wire is bonded to the heater electrode and the sensitive body electrode by ultrasonic thermocompression bonding, and furthermore, a bonding portion of the lead wire is fixed by a conductive paste. Since the bonding portion of the lead wire bonded to the wire is fixed by the conductive paste, it has the effect of improving the bonding strength of the lead wire at the bonding portion.

【００３６】また、請求項１４に記載のガスセンサの製
造方法の発明は、請求項１２または請求項１３記載の発
明において、ヒータ用電極と感応体用電極とを、予め絶
縁性基板上に設けた有機金属化合物から成る薄膜電極の
上に設けるものであり、予め絶縁性基板上に、リード線
ワイヤを接合する電極（ヒータ用電極と感応体用電極）
と絶縁性基板との両方に密着性の高い有機金属化合物か
ら成る薄膜電極を設け、リード線ワイヤを接合する電極
（ヒータ用電極と感応体用電極）をその薄膜電極の上に
設けるため、振動の影響によって、絶縁性基板からワイ
ヤ接合部分の電極が剥離する可能性を少なくし、ガスセ
ンサの信頼性が向上するという作用を有する。According to a fourteenth aspect of the present invention, there is provided a gas sensor manufacturing method according to the twelfth or thirteenth aspect, wherein the heater electrode and the sensitive body electrode are provided on an insulating substrate in advance. An electrode (heater electrode and sensitive body electrode) that is provided on a thin film electrode made of an organometallic compound, and in which a lead wire is bonded on an insulating substrate in advance.
A thin film electrode made of an organometallic compound with high adhesion is provided on both the substrate and the insulating substrate, and the electrodes (heater electrode and sensitive body electrode) for joining the lead wire are provided on the thin film electrode. Has the effect of reducing the possibility that the electrode at the wire bonding portion is peeled off from the insulating substrate, thereby improving the reliability of the gas sensor.

【００３７】[0037]

【発明の実施の形態】以下、本発明による実施の形態に
ついて、図面を参照しながら説明する。なお、従来と同
一構成については、同一符号を付してその詳細な説明を
省略する。Embodiments of the present invention will be described below with reference to the drawings. The same components as those in the related art are denoted by the same reference numerals, and detailed description thereof is omitted.

【００３８】また、本発明の実施の形態によるガスセン
サは、従来の技術の一例として説明した特開平８−９４
５６３号公報におけるガスセンサとは異なり、アルミナ
基板の一面に電極パッドを集約した構成を取らず、アル
ミナ基板の上面に設けられた感応体用電極及び下面に設
けられたヒータ用電極とリード線ワイヤを接続した構成
となっている。Further, the gas sensor according to the embodiment of the present invention is disclosed in JP-A-8-94 described as an example of the prior art.
Unlike the gas sensor disclosed in Japanese Patent No. 563, it does not have a configuration in which electrode pads are integrated on one surface of an alumina substrate, and a sensing electrode provided on the upper surface of the alumina substrate and a heater electrode provided on the lower surface and a lead wire are used. It has a connected configuration.

【００３９】但し、本発明の実施の形態は、従来の技術
の一例として説明した特開平８−９４５６３号公報にお
けるガスセンサと同様に、アルミナ基板の一面に電極を
集約した構成においても同様の作用効果が得られる。However, the embodiment of the present invention has the same operational effects even in a configuration in which electrodes are integrated on one surface of an alumina substrate, similarly to the gas sensor described in JP-A-8-94563 described as an example of the prior art. Is obtained.

【００４０】（実施の形態１）図１は、本発明の実施の
形態１によるガスセンサの断面図である。(Embodiment 1) FIG. 1 is a sectional view of a gas sensor according to Embodiment 1 of the present invention.

【００４１】図１において、１は絶縁性基板のアルミナ
基板である。２はRuＯ2から成るヒータ、３はヒータ用
電極であり一定の間隔をおいて、アルミナ基板１の下面
に設けられている。６はリード線ワイヤである。In FIG. 1, reference numeral 1 denotes an alumina substrate as an insulating substrate. Numeral 2 denotes a heater made of RuO 2, and numeral 3 denotes a heater electrode, which is provided on the lower surface of the alumina substrate 1 at regular intervals. 6 is a lead wire.

【００４２】アルミナ基板１の上面には、感応体用電極
８が一定の間隔をおいて設けられている。９は感応体膜
であり、SnO2あるいはZnＯ等の金属酸化物半導体であっ
て、アルミナ基板１と感応体用電極８上に形成されてい
る。Sensitive body electrodes 8 are provided on the upper surface of the alumina substrate 1 at regular intervals. Reference numeral 9 denotes a sensitive film, which is a metal oxide semiconductor such as SnO 2 or ZnO, and is formed on the alumina substrate 1 and the sensitive electrode 8.

【００４３】以上のように構成されたガスセンサについ
て、以下その製造工程について説明する。The manufacturing process of the gas sensor configured as described above will be described below.

【００４４】まず、アルミナ基板１の下面にスクリーン
印刷によって金ペーストをプリントし、６０℃の乾燥炉
で５分乾燥した後、連続炉により８７０℃で１時間焼成
し、ヒータ用電極３を形成する。First, a gold paste is printed on the lower surface of the alumina substrate 1 by screen printing, dried in a drying furnace at 60 ° C. for 5 minutes, and then baked in a continuous furnace at 870 ° C. for 1 hour to form the heater electrode 3. .

【００４５】次に、ヒータ用電極３が形成されたアルミ
ナ基板１の下面にスクリーン印刷によって抵抗体ペース
トをプリントし、６０℃の乾燥炉で５分乾燥した後、連
続炉により８５０℃で１時間焼成し、ヒータ２を形成す
る。Next, a resistor paste is printed on the lower surface of the alumina substrate 1 on which the heater electrodes 3 are formed by screen printing, dried for 5 minutes in a drying furnace at 60 ° C., and then for 1 hour at 850 ° C. in a continuous furnace. By firing, the heater 2 is formed.

【００４６】次に、アルミナ基板１の上面に、スクリー
ン印刷によって金ペーストをプリントし、６０℃の乾燥
炉で５分乾燥した後、連続炉により８００℃で１時間焼
成し、感応体用電極８を形成する。Next, a gold paste is printed on the upper surface of the alumina substrate 1 by screen printing, dried in a drying furnace at 60 ° C. for 5 minutes, and baked in a continuous furnace at 800 ° C. for 1 hour. To form

【００４７】次に、感応体用電極８が形成されたアルミ
ナ基板１の上面にスクリーン印刷によって感応体材料の
２−エチルヘキサン酸スズを主成分とする感応体ペース
トをプリントし、６０℃の乾燥炉で５分乾燥した後、連
続炉により７００℃で１時間焼成し、感応体膜９を形成
する。Next, a sensitive material paste mainly containing tin 2-ethylhexanoate as a sensitive material is printed on the upper surface of the alumina substrate 1 on which the sensitive material electrodes 8 are formed, and dried at 60 ° C. After drying in a furnace for 5 minutes, it is baked at 700 ° C. for 1 hour in a continuous furnace to form a sensitive body film 9.

【００４８】次に、ヒータ２が形成されたアルミナ基板
１の下面に、ＹＡＧレーザにより切断面を入れて基板を
切断し、所定のサイズのセンサエレメントを完成する。Next, a cut surface is cut by a YAG laser on the lower surface of the alumina substrate 1 on which the heater 2 is formed, and the substrate is cut to complete a sensor element of a predetermined size.

【００４９】最後に、ヒータ用金電極３及び感応体用電
極８の表面にワイヤボンダによってリード線ワイヤ６を
超音波熱圧着によって接合する。Finally, the lead wire 6 is bonded to the surfaces of the heater gold electrode 3 and the sensitive body electrode 8 by ultrasonic bonding using a wire bonder.

【００５０】このように、リード線ワイヤ６が超音波熱
圧着によって、微弱な熱によりヒータ用電極３及び感応
体用電極８に接合されるので、省電力化を図るために線
径が細く剛性の低いワイヤを用いる場合でも、スポット
溶接のように約１００Ｖの高電圧による電気的な溶接に
比べ、ワイヤの破断を防止することができる。As described above, since the lead wire 6 is bonded to the heater electrode 3 and the sensitive body electrode 8 by weak heat by ultrasonic thermocompression bonding, the wire diameter is small and rigid for power saving. Even when a low wire is used, breakage of the wire can be prevented as compared with electric welding using a high voltage of about 100 V such as spot welding.

【００５１】以上のように本実施の形態のガスセンサ
は、絶縁性基板１と、一定の間隔をおいて基板１の上面
上に設けられた一対あるいは複数対の感応体用電極８
と、基板１の上面と感応体用電極８上に設けられた感応
体膜９と、一定の間隔をおいて基板１の下面上に設けら
れた一対のヒータ用電極３と、基板１の下面とヒータ用
電極３上に設けられたヒータ２と、感応体用電極８及び
ヒータ用電極３に接合されたリード線ワイヤ６とから構
成されるセンサエレメントにおいて、リード線ワイヤ６
は超音波熱圧着によって接合したので、省電力化を図る
ために線径が細く剛性の低いワイヤを用いる場合でも、
スポット溶接のように約１００Ｖの高電圧による電気的
な溶接に比ベワイヤの破断を防止し、製造工程でのワイ
ヤ破断の問題を回避し生産効率を向上することができ
る。As described above, the gas sensor according to the present embodiment comprises an insulating substrate 1 and a pair or a plurality of pairs of sensitive body electrodes 8 provided on the upper surface of the substrate 1 at a fixed interval.
An upper surface of the substrate 1 and a sensitive body film 9 provided on the sensitive body electrode 8, a pair of heater electrodes 3 provided on a lower surface of the substrate 1 at a predetermined interval, and a lower surface of the substrate 1 And a heater 2 provided on the heater electrode 3 and a lead wire 6 joined to the sensitive body electrode 8 and the heater electrode 3.
Was joined by ultrasonic thermocompression bonding, so even if a wire with a small diameter and low rigidity is used to save power,
Compared to electric welding with a high voltage of about 100 V like spot welding, breakage of the wire can be prevented, and the problem of wire breakage in the manufacturing process can be avoided to improve production efficiency.

【００５２】なお、本実施の形態において、基板１はア
ルミナとしたが、絶縁性であれば良く、例えばムライ
ト、フォルステライト等でも良い。また、ヒータ用電極
３及び感応体用電極８は金電極としたが、白金電極とし
てもリード線ワイヤ６の種類によっては、超音波熱圧着
による接合が可能であり、同様の効果が得られる。In this embodiment, the substrate 1 is made of alumina, but may be made of an insulating material such as mullite or forsterite. In addition, although the heater electrode 3 and the sensitive body electrode 8 are gold electrodes, depending on the type of the lead wire 6, a platinum electrode can be joined by ultrasonic thermocompression bonding, and the same effect can be obtained.

【００５３】また、本実施の形態において、リード線ワ
イヤ６の線径を２０μｍ以上かつ６０μｍ以下とするこ
とで、ヒータ消費電力の少ないガスセンサを提供するこ
とができる。Further, in this embodiment, by setting the wire diameter of the lead wire 6 to 20 μm or more and 60 μm or less, it is possible to provide a gas sensor with low heater power consumption.

【００５４】図２に各リード線ワイヤの線径におけるヒ
ータ消費電力と感応体膜表面温度を測定した結果を示
す。ここで、この測定はAuリード線を用いて行ったが、
線径による影響は他の材料でも同じである。FIG. 2 shows the results of measurement of the power consumption of the heater and the surface temperature of the sensitive film at the wire diameter of each lead wire. Here, this measurement was performed using an Au lead wire,
The effect of the wire diameter is the same for other materials.

【００５５】図２から、例えぱ感応体の保持温度を３５
０℃に保つには線径１００μｍに対して５０μｍではヒ
ータ消費電力は約５０％になることを確認した。これ
は、リード線ワイヤ６の断面積が小さくなることで、ヒ
ータからリード線を通じての熱的ロスが低減されるため
である。From FIG. 2, it can be seen that the holding temperature of the sensitive body is 35
In order to keep the temperature at 0 ° C., it was confirmed that the heater power consumption was about 50% when the wire diameter was 50 μm for the wire diameter of 100 μm. This is because the reduction in the cross-sectional area of the lead wire 6 reduces the thermal loss from the heater through the lead wire.

【００５６】したがって、線径を６０μｍ以下と細くす
ることで、ヒータ消費電力をさらに低減することができ
る。また、超音波熱圧着によってリード線ワイヤ６を破
断することがなく確実に接合することができる。Accordingly, heater power consumption can be further reduced by reducing the wire diameter to 60 μm or less. In addition, the lead wire 6 can be securely joined by ultrasonic thermocompression bonding without breaking.

【００５７】また、さらにリード線ワイヤ６の材料をAu
−Pdの合金線とすることで、さらにヒータ消費電力が少
なく、ワイヤ自身の強度の高いガスセンサを提供するこ
とができる。Further, the material of the lead wire 6 is Au
By using an alloy wire of -Pd, it is possible to provide a gas sensor with lower heater power consumption and higher strength of the wire itself.

【００５８】図３に、リード線ワイヤとして線径５０μ
ｍのAu単体とAu−Pd合金線（Au：Pd＝５０：５０）を用
いた場合のヒータ消費電力と感応体膜表面温度を測定し
た結果を示す。FIG. 3 shows a lead wire having a wire diameter of 50 μm.
The result of measuring the heater power consumption and the surface temperature of the sensitive film when using Au alone and an Au-Pd alloy wire (Au: Pd = 50: 50) are shown.

【００５９】図３から、例えば感応体の保持温度を３５
０℃に保つには、Au単体に対してAu−Pd合金線ではヒー
タ消費電力は約７０％になることを確認した。これは、
Au単体に対してAu−Pd合金線は熱伝導率が小さくヒータ
からリード線を通じての熱的ロスが低減されるためであ
る。また、Au単体に比べAu−Pd合金線は高剛性であるた
めワイヤ強度が高い。From FIG. 3, for example, the holding temperature of the sensitive body is set to 35
In order to maintain the temperature at 0 ° C., it was confirmed that the heater power consumption of the Au—Pd alloy wire was about 70% of that of Au alone. this is,
This is because the Au-Pd alloy wire has a smaller thermal conductivity than the simple substance of Au, and the thermal loss from the heater through the lead wire is reduced. Further, the Au-Pd alloy wire has higher rigidity than Au alone, and therefore has higher wire strength.

【００６０】したがって、リード線ワイヤ６の材料とし
てAu−Pd合金線を用いることで、さらに消費電力が少な
い上にワイヤ白身の断線を防止することができる。Therefore, by using an Au-Pd alloy wire as the material of the lead wire 6, the power consumption can be further reduced and the wire white can be prevented from being broken.

【００６１】本実施の形態は、電極（ヒータ用電極３及
び感応体用電極８）を絶縁性基板１上に設け、リード線
ワイヤ６を電極（ヒータ用電極３及び感応体用電極８）
に接合した半導体装置（ガスセンサ）であって、リード
線ワイヤ６は、電極（ヒータ用電極３及び感応体用電極
８）に超音波熱圧着によって接合されているものであ
り、微弱な熱によりリード線ワイヤ６を電極（ヒータ用
電極３及び感応体用電極８）に接合したので、スポット
溶接のように約１００Ｖの高電圧により電気的に溶接し
た場合に比べて、ワイヤ６が破断し難く、線径が細く剛
性の低いリード線ワイヤ６の使用が可能となるという効
果がある。In this embodiment, the electrodes (the heater electrode 3 and the sensitive body electrode 8) are provided on the insulating substrate 1, and the lead wire 6 is connected to the electrode (the heater electrode 3 and the sensitive body electrode 8).
The semiconductor device (gas sensor) is bonded to the electrodes, and the lead wire 6 is bonded to the electrodes (the heater electrode 3 and the sensitive body electrode 8) by ultrasonic thermocompression bonding. Since the wire 6 is joined to the electrodes (the electrode 3 for the heater and the electrode 8 for the sensitive body), the wire 6 is less likely to break as compared with the case where the wire 6 is electrically welded by a high voltage of about 100 V like spot welding. There is an effect that the lead wire 6 having a small wire diameter and low rigidity can be used.

【００６２】また、本実施の形態は、電極（ヒータ用電
極３及び感応体用電極８）を絶縁性基板１上に設けた
後、リード線ワイヤ６を、超音波熱圧着によって電極
（ヒータ用電極３及び感応体用電極８）に接合するもの
であり、微弱な熱によりリード線ワイヤ６を電極に接合
するので、スポット溶接のように約１００Ｖの高電圧に
より電気的に溶接する場合（他の一般的な溶接法でリー
ド線ワイヤを電極に接合する場合）に比べて、製造工程
でワイヤ６が破断し難く、生産効率を向上でき、線径が
細く剛性の低いリード線ワイヤ６を使用しても比較的ワ
イヤ６が破断し難いという効果がある。In this embodiment, after the electrodes (the heater electrode 3 and the sensitive body electrode 8) are provided on the insulating substrate 1, the lead wire 6 is connected to the electrode (for the heater) by ultrasonic thermocompression bonding. Since the lead wire 6 is bonded to the electrode 3 by the weak heat, the lead wire 6 is bonded to the electrode 3 by the weak heat. In the case where the lead wire is joined to the electrode by the general welding method, the wire 6 is hardly broken in the manufacturing process, the production efficiency can be improved, and the wire diameter is small and the rigidity is low. Even so, there is an effect that the wire 6 is relatively hard to break.

【００６３】また、本実施の形態は、ヒータ２と、ヒー
タ２に電気的に接続される一対のヒータ用電極３と、ヒ
ータ２の発熱により所定温度に加熱され被検ガス中に暴
露されると抵抗値が減少する感応体膜９と、感応体膜９
に電気的に接続される一対あるいは複数対の感応体用電
極８とを、絶縁性基板１上に設け、リード線ワイヤ６を
ヒータ用電極３と感応体用電極８とに接合したガスセン
サであって、リード線ワイヤ６は、ヒータ用電極３と感
応体用電極８とに超音波熱圧着によって接合されている
ものであり、微弱な熱によりリード線ワイヤ６をヒータ
用電極３と感応体用電極８とに接合したので、スポット
溶接のように約１００Ｖの高電圧により電気的に溶接し
た場合に比べて、ワイヤ６が破断し難く、線径が細く剛
性の低いリード線ワイヤ６の使用が可能となり、線径が
細いリード線ワイヤ６を使用することにより、リード線
ワイヤ６を伝わる熱による放熱が少なくなり、感応体膜
９を所定温度に加熱するヒータ２の消費電力を低減でき
るという効果がある。In this embodiment, the heater 2, a pair of heater electrodes 3 electrically connected to the heater 2, and the heater 2 are heated to a predetermined temperature and exposed to the test gas. Film 9 whose resistance value decreases, and film 9
A gas sensor in which one or more pairs of sensitive body electrodes 8 electrically connected to the electrodes are provided on the insulating substrate 1 and the lead wire 6 is joined to the heater electrode 3 and the sensitive body electrode 8. The lead wire 6 is bonded to the heater electrode 3 and the sensitive body electrode 8 by ultrasonic thermocompression bonding, and the lead wire 6 is connected to the heater electrode 3 and the sensitive body electrode by weak heat. Since the wire 6 is joined to the electrode 8, the wire 6 is less likely to be broken and has a smaller wire diameter and a lower rigidity as compared with a case where it is electrically welded by a high voltage of about 100 V like spot welding. By using the lead wire 6 having a small wire diameter, heat radiation due to heat transmitted through the lead wire 6 is reduced, and the power consumption of the heater 2 for heating the sensitive film 9 to a predetermined temperature can be reduced. There .

【００６４】また、本実施の形態は、リード線ワイヤ６
の線径が２０μｍ以上かつ６０μｍ以下であるものであ
り、リード線ワイヤ６の線径が６０μｍ以下と細いこと
から断面積が小さくなることで、ヒータ２からリード線
ワイヤ６を通じての熱伝導が低減される。これにより感
応体薄膜９を保持温度に保つヒータ２の消費電力が低減
されるという効果がある。また、リード線ワイヤ６の線
径が２０μｍ以上であるため、超音波熱圧着によってリ
ード線ワイヤ６を破断する可能性が少なくほぼ確実に接
合ができるという効果がある。In this embodiment, the lead wire 6
Has a wire diameter of not less than 20 μm and not more than 60 μm. Since the wire diameter of the lead wire 6 is as thin as 60 μm or less, the cross-sectional area is reduced, so that heat conduction from the heater 2 through the lead wire 6 is reduced. Is done. Thereby, there is an effect that the power consumption of the heater 2 for maintaining the sensitive body thin film 9 at the holding temperature is reduced. Further, since the wire diameter of the lead wire 6 is 20 μm or more, there is an effect that the possibility of breaking the lead wire 6 by ultrasonic thermocompression bonding is small and the bonding can be performed almost certainly.

【００６５】また、本実施の形態は、リード線ワイヤ６
をAu−Pd合金線としたものであり、Au−Pd合金線熱は伝
導率が小さく高剛性であるため、リード線ワイヤ６にAu
−Pd合金線を用いることにより、Au−Pd合金線の伝導率
が小さいという特性からリード線ワイヤ６を伝わる熱に
よる放熱が少なくなり、感応体膜９を所定温度に加熱す
るヒータ２の消費電力を低減でき、Au−Pd合金線の高剛
性という特性から、ワイヤ強度が確保できワイヤ自身の
断線が起こりにくく、線径が細いリード線ワイヤ６の使
用が可能となり、線径が細いリード線ワイヤ６を使用す
れば、さらにヒータ２の消費電力を低減できるという効
果がある。In this embodiment, the lead wire 6
Is an Au—Pd alloy wire, and the heat of the Au—Pd alloy wire is small in conductivity and high in rigidity.
By using the -Pd alloy wire, heat dissipation due to heat transmitted through the lead wire 6 is reduced due to the characteristic that the conductivity of the Au-Pd alloy wire is small, and the power consumption of the heater 2 for heating the sensitive film 9 to a predetermined temperature is reduced. And the high rigidity of the Au-Pd alloy wire allows the wire strength to be secured, the wire itself to be hardly broken, and the use of the lead wire 6 having a small wire diameter is possible, and the lead wire having a small wire diameter can be used. The use of No. 6 has the effect that the power consumption of the heater 2 can be further reduced.

【００６６】また、本実施の形態は、ヒータ２と、ヒー
タ２に電気的に接続される一対のヒータ用電極３と、ヒ
ータ２の発熱により所定温度に加熱され被検ガス中に暴
露されると抵抗値が減少する感応体膜９と、感応体膜９
に電気的に接続される一対あるいは複数対の感応体用電
極８とを、絶縁性基板１上に設けた後、リード線ワイヤ
６を、超音波熱圧着によってヒータ用電極３と感応体用
電極８とに接合するものであり、微弱な熱によりリード
線ワイヤ６をヒータ用電極３と感応体用電極８とにに接
合するので、スポット溶接のように約１００Ｖの高電圧
により電気的に溶接する場合に比べて、製造工程でワイ
ヤ６が破断し難く、生産効率を向上でき、線径が細く剛
性の低いリード線ワイヤ６の使用が可能となり、線径が
細いリード線ワイヤ６を使用することにより、リード線
ワイヤ６を伝わる熱による放熱が少なくなり、感応体膜
９を所定温度に加熱するヒータ２の消費電力を低減でき
るという効果がある。In this embodiment, the heater 2, a pair of heater electrodes 3 electrically connected to the heater 2, and the heater 2 are heated to a predetermined temperature and exposed to the test gas. Film 9 whose resistance value decreases, and film 9
After providing one or more pairs of sensitive body electrodes 8 electrically connected to the substrate, the lead wire 6 is connected to the heater electrode 3 and the sensitive body electrode by ultrasonic thermocompression bonding. 8 and the lead wire 6 is joined to the heater electrode 3 and the sensitive body electrode 8 by weak heat, so that it is electrically welded by a high voltage of about 100 V like spot welding. In comparison with the case where the wire 6 is manufactured, the wire 6 is less likely to be broken in the manufacturing process, the production efficiency can be improved, the wire 6 having a small diameter and low rigidity can be used, and the wire 6 having a small wire diameter is used. Thereby, there is an effect that heat radiation due to heat transmitted through the lead wire 6 is reduced, and power consumption of the heater 2 for heating the sensitive film 9 to a predetermined temperature can be reduced.

【００６７】（実施の形態２）図４は、本発明の実施の
形態２によるガスセンサの断面図である。(Embodiment 2) FIG. 4 is a sectional view of a gas sensor according to Embodiment 2 of the present invention.

【００６８】図４において、１は絶縁性基板のアルミナ
基板である。２はRuＯ2から成るヒータ、３はヒータ用
電極であり一定の間隔をおいて、アルミナ基板１の下面
に設けられている。６はリード線ワイヤである。In FIG. 4, reference numeral 1 denotes an alumina substrate as an insulating substrate. Numeral 2 denotes a heater made of RuO 2, and numeral 3 denotes a heater electrode, which is provided on the lower surface of the alumina substrate 1 at regular intervals. 6 is a lead wire.

【００６９】アルミナ基板１の上面には、感応体用電極
８が一定の間隔をおいて設けられている。９は感応体膜
でありSnＯ2あるいはZnＯ等の金属酸化物半導体であっ
て、アルミナ基板１と感応体用電極８上に形成されてい
る。７は導電性ペーストであり、Auペーストを用いてい
る。Sensitive body electrodes 8 are provided on the upper surface of the alumina substrate 1 at regular intervals. Reference numeral 9 denotes a sensitive film, which is a metal oxide semiconductor such as SnO 2 or ZnO, and is formed on the alumina substrate 1 and the sensitive electrode 8. Reference numeral 7 denotes a conductive paste using Au paste.

【００７０】導電性ペースト１１は、感応体膜９の焼成
後リード線ワイヤ６を感応体用電極８及びヒータ用電極
３にワイヤボンダで超音波熱圧着した後、接合部に塗布
し焼成するので低温焼成が容易なAu，Au−Pd合金ペース
ト、Niペーストが好ましい。ここでは、Auペーストを用
いた。The conductive paste 11 is subjected to ultrasonic thermocompression bonding of the lead wire 6 to the electrode 8 for the sensitive body and the electrode 3 for the heater after the firing of the sensitive body film 9 with a wire bonder, and then applied to the bonding portion and fired. Au, Au-Pd alloy paste and Ni paste, which can be easily fired, are preferable. Here, an Au paste was used.

【００７１】以上のように構成されたガスセンサにおい
て、リード線ワイヤ６のAu−Pd合金線と感応体用電極８
及びヒータ用電極３の接合部が導電性ペースト７のAuペ
ーストで固定されていることによって、剛性が高く超音
波熱圧着による接合強度が低いAu−Pdをリード線ワイヤ
６として用いた場合でも、接合部での接合強度を向上す
ることができる。In the gas sensor configured as described above, the Au—Pd alloy wire of the lead wire 6 and the sensitive body electrode 8
Also, since the bonding portion of the heater electrode 3 is fixed with the Au paste of the conductive paste 7, even when Au-Pd having high rigidity and low bonding strength by ultrasonic thermocompression bonding is used as the lead wire 6, The joint strength at the joint can be improved.

【００７２】以上のように本実施の形態のガスセンサ
は、絶縁性基板１と、一定の間隔をおいて基板１の上面
上に設けられた一対あるいは複数対の感応体用電極８
と、基板１の上面と感応体用電極８上に設けられた感応
体膜９と、一定の間隔をおいて基板１の下面上に設けら
れた一対のヒータ用電極３と、基板１の下面とヒータ用
電極３上に設けられたヒータ２と、感応体用電極８及び
ヒータ用電極３に接合されたリード線ワイヤ６とから構
成されるセンサエレメントにおいて、リード線ワイヤ６
は超音波熱圧着によって接合し、さらに導電性ペースト
７で接合部を固定したので、センサ使用時の振動によっ
て、リード線ワイヤ６が電極から断線することを防止
し、さらに信頼性の高いガスセンサを提供することがで
きる。As described above, the gas sensor according to the present embodiment comprises an insulating substrate 1 and a pair or a plurality of pairs of sensitive body electrodes 8 provided on the upper surface of the substrate 1 at a fixed interval.
An upper surface of the substrate 1 and a sensitive body film 9 provided on the sensitive body electrode 8, a pair of heater electrodes 3 provided on a lower surface of the substrate 1 at a predetermined interval, and a lower surface of the substrate 1 And a heater 2 provided on the heater electrode 3 and a lead wire 6 joined to the sensitive body electrode 8 and the heater electrode 3.
Are bonded by ultrasonic thermocompression bonding, and the bonding portion is further fixed by the conductive paste 7, so that the lead wire 6 is prevented from being disconnected from the electrode due to vibration during use of the sensor, and a more reliable gas sensor is provided. Can be provided.

【００７３】本実施の形態は、実施の形態１の半導体装
置（ガスセンサ）の構成に加えて、リード線ワイヤ６の
電極（感応体用電極８及びヒータ用電極３）との接合部
が導電性ペースト７で固定されているものであり、リー
ド線ワイヤ６の接合部が導電性ペースト７で固定されて
いるため、接合部でのリード線ワイヤ６の接合強度が向
上するという効果がある。In the present embodiment, in addition to the configuration of the semiconductor device (gas sensor) of the first embodiment, the joint between the lead wire 6 and the electrode (the sensitive body electrode 8 and the heater electrode 3) is electrically conductive. Since the bonding portion of the lead wire 6 is fixed with the conductive paste 7, the bonding strength of the lead wire 6 at the bonding portion is improved.

【００７４】また、本実施の形態は、電極（感応体用電
極８及びヒータ用電極３）を絶縁性基板１上に設けた
後、リード線ワイヤ６を、超音波熱圧着によって電極
（感応体用電極８及びヒータ用電極３）に接合し、さら
に、リード線ワイヤ６の電極（感応体用電極８及びヒー
タ用電極３）との接合部を導電性ペースト７で固定する
ものであり、超音波熱圧着によって電極（感応体用電極
８及びヒータ用電極３）に接合したリード線ワイヤ６の
接合部を導電性ペースト７で固定するので、接合部での
リード線ワイヤ６の接合強度が向上するという効果があ
る。Further, in this embodiment, after the electrodes (the electrode 8 for the sensitive body and the electrode 3 for the heater) are provided on the insulating substrate 1, the lead wire 6 is attached to the electrode (the sensitive body) by ultrasonic thermocompression bonding. To the electrode 8 for the heater and the electrode 3 for the heater, and further, the joint of the lead wire 6 with the electrode (the electrode 8 for the sensitive body and the electrode 3 for the heater) is fixed with the conductive paste 7. Since the bonding portion of the lead wire 6 bonded to the electrodes (the sensitive body electrode 8 and the heater electrode 3) by sonic thermocompression bonding is fixed with the conductive paste 7, the bonding strength of the lead wire 6 at the bonding portion is improved. There is an effect of doing.

【００７５】また、本実施の形態は、実施の形態１のガ
スセンサの構成に加えて、リード線ワイヤ６の感応体用
電極８及びヒータ用電極３との接合部が導電性ペースト
７で固定されているものであり、リード線ワイヤ６の接
合部が導電性ペースト７で固定されているため、接合部
でのリード線ワイヤ６の接合強度が向上するという効果
がある。In the present embodiment, in addition to the configuration of the gas sensor of the first embodiment, the joint between the sensitive body electrode 8 and the heater electrode 3 of the lead wire 6 is fixed by the conductive paste 7. Since the bonding portion of the lead wire 6 is fixed by the conductive paste 7, there is an effect that the bonding strength of the lead wire 6 at the bonding portion is improved.

【００７６】また、本実施の形態は、ヒータ２と、ヒー
タ２に電気的に接続される一対のヒータ用電極３と、ヒ
ータ２の発熱により所定温度に加熱され被検ガス中に暴
露されると抵抗値が減少する感応体膜９と、感応体膜９
に電気的に接続される一対あるいは複数対の感応体用電
極８とを、絶縁性基板１上に設けた後、リード線ワイヤ
６を、超音波熱圧着によってヒータ用電極３と感応体用
電極８とに接合し、さらに、リード線ワイヤ６の接合部
を導電性ペースト７で固定するものであり、超音波熱圧
着によって電極（ヒータ用電極３と感応体用電極８）に
接合したリード線ワイヤ６の接合部を導電性ペースト７
で固定するので、接合部でのリード線ワイヤ６の接合強
度が向上するという効果がある。In this embodiment, the heater 2, a pair of heater electrodes 3 electrically connected to the heater 2, and the heater 2 are heated to a predetermined temperature and exposed to the test gas. Film 9 whose resistance value decreases, and film 9
After providing one or more pairs of sensitive body electrodes 8 electrically connected to the substrate, the lead wire 6 is connected to the heater electrode 3 and the sensitive body electrode by ultrasonic thermocompression bonding. 8, and furthermore, the bonding portion of the lead wire 6 is fixed with a conductive paste 7, and the lead wire bonded to the electrodes (the heater electrode 3 and the sensitive body electrode 8) by ultrasonic thermocompression bonding. Conductive paste 7 is applied to the joint of wire 6
Therefore, there is an effect that the joining strength of the lead wire 6 at the joining portion is improved.

【００７７】（実施の形態３）図５は、本発明の実施の
形態３によるガスセンサの断面図である。(Embodiment 3) FIG. 5 is a sectional view of a gas sensor according to Embodiment 3 of the present invention.

【００７８】図５において、１は絶縁性基板のアルミナ
基板である。２はRuＯ2から成るヒータ、３はヒータ用
電極であり一定の間隔をおいて、アルミナ基板１の下面
に設けられている。６はリード線ワイヤである。In FIG. 5, reference numeral 1 denotes an alumina substrate as an insulating substrate. Numeral 2 denotes a heater made of RuO 2, and numeral 3 denotes a heater electrode, which is provided on the lower surface of the alumina substrate 1 at regular intervals. 6 is a lead wire.

【００７９】アルミナ基板１の上面には、感応体用電極
８が一定の間隔をおいて設けられている。９は感応体膜
であり、SnＯ2あるいはZnＯ等の金属酸化物半導体であ
って、アルミナ基板１と感応体用電極８上に形成されて
いる。７は導電性ペーストである。Sensitive body electrodes 8 are provided on the upper surface of the alumina substrate 1 at regular intervals. Reference numeral 9 denotes a sensitive film, which is a metal oxide semiconductor such as SnO 2 or ZnO, and is formed on the alumina substrate 1 and the sensitive electrode 8. 7 is a conductive paste.

【００８０】１１は有機金属化合物から成る薄膜電極で
あり、感応体用電極８及びヒータ用金電極３に対応し
て、一定の間隔をおいて基板１と感応体用電極８及びヒ
ータ用電極３の間に密着して形成されている。Reference numeral 11 denotes a thin-film electrode made of an organometallic compound, which corresponds to the electrode 8 for the sensitive body and the gold electrode 3 for the heater, and is spaced apart from the substrate 1 by a certain distance. Are formed in close contact with each other.

【００８１】以上のように構成されたガスセンサにっい
て、以下その製造工程について説明する。The manufacturing process of the gas sensor configured as described above will be described below.

【００８２】まず、アルミナ基板１の両面（上面及び下
面）にスクリーン印刷によって有機金属化合物をプリン
トし、６０℃の乾燥炉で５分乾燥した後、連続炉により
８７０℃で１時間焼成し、薄膜電極１１を形成する。First, an organometallic compound was printed on both sides (upper and lower surfaces) of the alumina substrate 1 by screen printing, dried in a drying oven at 60 ° C. for 5 minutes, and baked at 870 ° C. for 1 hour in a continuous oven to obtain a thin film. The electrode 11 is formed.

【００８３】次に、アルミナ基板１の下面にスクリーン
印刷によって金ペーストをプリントし、６０℃の乾燥炉
で５分乾燥した後、連続炉により８７０℃で１時間焼成
し、ヒータ用電極３を形成する。Next, a gold paste is printed on the lower surface of the alumina substrate 1 by screen printing, dried in a drying furnace at 60 ° C. for 5 minutes, and baked in a continuous furnace at 870 ° C. for 1 hour to form the heater electrode 3. I do.

【００８４】次に、ヒータ用電極３が形成されたアルミ
ナ基板１の下面にスクリーン印刷によって抵抗体ペース
トをプリントし、６０℃の乾燥炉で５分乾燥した後、連
続炉により８５０℃で１時間焼成し、ヒータ２を形成す
る。Next, a resistor paste is printed by screen printing on the lower surface of the alumina substrate 1 on which the heater electrodes 3 are formed, and dried in a drying furnace at 60 ° C. for 5 minutes, and then at 850 ° C. for 1 hour in a continuous furnace. By firing, the heater 2 is formed.

【００８５】次に、アルミナ基板１の両面（上面及び下
面）に、スクリーン印刷によって金ペーストをプリント
し、６０℃の乾燥炉で５分乾燥した後、連続炉により８
００℃で１時間焼成し、感応体用電極８及びヒータ用電
極３を形成する。Next, a gold paste was printed on both surfaces (upper and lower surfaces) of the alumina substrate 1 by screen printing, dried for 5 minutes in a drying oven at 60 ° C., and then dried in a continuous oven for 8 minutes.
Baking is performed at 00 ° C. for 1 hour to form the electrode 8 for the sensitive body and the electrode 3 for the heater.

【００８６】次に、感床体用電極８が形成されたアルミ
ナ基板１の上面にスクリーン印刷によって感床体材料の
２−エチルヘキサン酸スズを主成分とする感応体用ペー
ストをプリントし、６０℃の乾燥炉で５分乾燥した後、
連続炉により７００℃で１時間焼成し、感応体膜９を形
成する。Next, a paste for a sensing element mainly composed of tin 2-ethylhexanoate as a sensing element is printed on the upper surface of the alumina substrate 1 on which the sensing element electrode 8 is formed, by a screen printing method. After drying for 5 minutes in a drying oven at ℃
It is baked at 700 ° C. for 1 hour in a continuous furnace to form a sensitive film 9.

【００８７】次に、ヒータ２が形成されたアルミナ基板
１の下面に、ＹＡＧレーザにより切断面を入れて基板を
切断し、所定のサイズのセンサエレメントを完成する。Next, a cut surface is put on the lower surface of the alumina substrate 1 on which the heater 2 is formed by using a YAG laser, and the substrate is cut to complete a sensor element having a predetermined size.

【００８８】次に、ヒータ用金電極３及び感応体用電極
８の表面にワイヤボンダによってリード線ワイヤ６を超
音波熱圧着によって接合する。Next, the lead wire 6 is bonded to the surfaces of the gold electrode for heater 3 and the electrode 8 for sensitive element by ultrasonic thermocompression bonding using a wire bonder.

【００８９】最後にリード線ワイヤ６の接合部に導電性
ペースト７であるAuペーストを塗布し、６０℃の乾燥炉
で５分乾燥した後、連続炉により６００℃で１時間焼成
する。Finally, an Au paste, which is the conductive paste 7, is applied to the joint of the lead wire 6, dried in a drying oven at 60 ° C. for 5 minutes, and then baked at 600 ° C. for 1 hour in a continuous oven.

【００９０】以上のように本実施の形態のガスセンサ
は、基板１と感応体用電極８及びヒータ用電極３の間に
有機金属化合物から成る薄膜電極１１を形成したので、
基板１と金電極との密着強度が向上する。As described above, in the gas sensor according to the present embodiment, the thin film electrode 11 made of an organometallic compound is formed between the substrate 1, the sensitive body electrode 8 and the heater electrode 3.
The adhesion strength between the substrate 1 and the gold electrode is improved.

【００９１】したがって、センサ使用時の振動によっ
て、リード線ワイヤ６と接合された電極が基板１から剥
離することを防止し、さらに信頼性の高いガスセンサを
提供することができる。Therefore, it is possible to prevent the electrode bonded to the lead wire 6 from peeling off from the substrate 1 due to the vibration at the time of using the sensor, and to provide a more reliable gas sensor.

【００９２】本実施の形態は、実施の形態２の半導体装
置（ガスセンサ）の構成に加えて、電極（ヒータ用金電
極３及び感応体用電極８）が、有機金属化合物から成る
薄膜電極１１を介して絶縁性基板１上に設けられている
ものであり、リード線ワイヤ６を接合する電極（ヒータ
用金電極３及び感応体用電極８）と絶縁性基板１との間
に、リード線ワイヤ６を接合する電極（ヒータ用金電極
３及び感応体用電極８）と絶縁性基板１との両方に密着
性の高い有機金属化合物から成る薄膜電極１１を形成し
たので、使用時の振動の影響によって、絶縁性基板１か
らワイヤ接合部分の電極（ヒータ用金電極３及び感応体
用電極８）が剥離する可能性を少なくし、半導体装置
（ガスセンサ）の信頼性が向上するという効果がある。In the present embodiment, in addition to the configuration of the semiconductor device (gas sensor) of the second embodiment, the electrodes (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) include the thin film electrode 11 made of an organometallic compound. The lead wire is provided between the electrodes (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) for bonding the lead wire 6 and the insulating substrate 1 through the interposer. 6, the thin film electrode 11 made of an organometallic compound having high adhesion is formed on both the electrode (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) and the insulating substrate 1. Accordingly, the possibility that the electrodes (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) at the wire bonding portion are separated from the insulating substrate 1 is reduced, and the reliability of the semiconductor device (gas sensor) is improved.

【００９３】また、本実施の形態は、電極（ヒータ用金
電極３及び感応体用電極８）を、予め絶縁性基板１上に
設けた有機金属化合物から成る薄膜電極１１の上に設け
るものであり、予め絶縁性基板１上に、リード線ワイヤ
６を接合する電極（ヒータ用金電極３及び感応体用電極
８）と絶縁性基板１との両方に密着性の高い有機金属化
合物から成る薄膜電極１１を設け、リード線ワイヤ６を
接合する電極（ヒータ用金電極３及び感応体用電極８）
をその薄膜電極１１の上に設けるため、振動の影響によ
って、絶縁性基板１からワイヤ接合部分の電極（ヒータ
用金電極３及び感応体用電極８）が剥離する可能性を少
なくし、半導体装置の信頼性が向上するという効果があ
る。In the present embodiment, the electrodes (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) are provided on the thin film electrode 11 made of an organometallic compound provided on the insulating substrate 1 in advance. A thin film made of an organometallic compound having high adhesion to both the electrodes (the gold electrodes 3 for the heater and the electrodes 8 for the sensitive body) for bonding the lead wires 6 and the insulating substrate 1 on the insulating substrate 1 in advance. An electrode for providing the electrode 11 and joining the lead wire 6 (the gold electrode 3 for the heater and the electrode 8 for the sensitive body)
Is provided on the thin film electrode 11, the possibility that the electrodes (the gold electrode 3 for the heater and the electrode 8 for the sensitive body) at the wire bonding portion are separated from the insulating substrate 1 by the influence of vibration is reduced, and the semiconductor device This has the effect of improving the reliability of the device.

【００９４】また、本実施の形態は、ヒータ用電極３と
感応体用電極８とは、有機金属化合物から成る薄膜電極
１１を介して絶縁性基板１上に設けられているものであ
り、リード線ワイヤ６を接合する電極（ヒータ用電極３
と感応体用電極８）と絶縁性基板１との間に、リード線
ワイヤ６を接合する電極（ヒータ用電極３と感応体用電
極８）と絶縁性基板１との両方に密着性の高い有機金属
化合物から成る薄膜電極１１を形成したので、センサ使
用時の振動の影響によって、絶縁性基板１からワイヤ接
合部分の電極が剥離する可能性を少なくし、ガスセンサ
の信頼性が向上するという効果がある。In this embodiment, the heater electrode 3 and the sensitive body electrode 8 are provided on the insulating substrate 1 via the thin film electrode 11 made of an organometallic compound. Electrode (heater electrode 3) for joining wire wire 6
Between the electrode (for the heater 3 and the electrode for the sensitive body 8) and the electrode for joining the lead wires 6 between the insulating substrate 1 and the electrode for the sensitive body 8) and the insulating substrate 1. Since the thin-film electrode 11 made of the organometallic compound is formed, the possibility that the electrode at the wire bonding portion is separated from the insulating substrate 1 due to the influence of vibration during use of the sensor is reduced, and the reliability of the gas sensor is improved. There is.

【００９５】また、本実施の形態は、ヒータ用電極３と
感応体用電極８とを、予め絶縁性基板１上に設けた有機
金属化合物から成る薄膜電極１１の上に設けるものであ
り、予め絶縁性基板１上に、リード線ワイヤ６を接合す
る電極（ヒータ用電極３と感応体用電極８）と絶縁性基
板１との両方に密着性の高い有機金属化合物から成る薄
膜電極１１を設け、リード線ワイヤ６を接合する電極
（ヒータ用電極３と感応体用電極８）をその薄膜電極１
１の上に設けるため、振動の影響によって、絶縁性基板
１からワイヤ接合部分の電極（ヒータ用電極３と感応体
用電極８）が剥離する可能性を少なくし、ガスセンサの
信頼性が向上するという効果がある。In the present embodiment, the heater electrode 3 and the sensitive body electrode 8 are provided on the thin-film electrode 11 made of an organometallic compound provided on the insulating substrate 1 in advance. On the insulating substrate 1, a thin film electrode 11 made of an organometallic compound having high adhesion to both the electrode (the heater electrode 3 and the sensitive body electrode 8) for joining the lead wire 6 and the insulating substrate 1 is provided. And the electrodes (heater electrode 3 and sensitive body electrode 8) for joining the lead wire 6 to the thin film electrode 1
1, the possibility that the electrodes (the heater electrode 3 and the sensitive electrode 8) at the wire bonding portion are separated from the insulating substrate 1 due to the influence of vibration is reduced, and the reliability of the gas sensor is improved. This has the effect.

【００９６】[0096]

【発明の効果】以上説明したように本発明の請求項１に
記載の半導体装置の発明は、リード線ワイヤが、電極に
超音波熱圧着によって接合されているので、ワイヤが破
断し難く、線径が細く剛性の低いリード線ワイヤの使用
が可能となるという効果がある。As described above, in the semiconductor device according to the first aspect of the present invention, since the lead wire is bonded to the electrode by ultrasonic thermocompression bonding, the wire is hardly broken, and the wire is hardly broken. There is an effect that a lead wire having a small diameter and low rigidity can be used.

【００９７】また、請求項２に記載の半導体装置の発明
は、請求項１記載の発明において、リード線ワイヤの接
合部が導電性ペーストで固定されているので、請求項１
記載の発明の効果に加え、接合部でのリード線ワイヤの
接合強度が向上するという効果がある。Further, in the invention of the semiconductor device according to the second aspect, in the invention according to the first aspect, the joint portion of the lead wire is fixed with a conductive paste.
In addition to the effects of the described invention, there is an effect that the joining strength of the lead wire at the joining portion is improved.

【００９８】また、請求項３に記載の半導体装置の発明
は、請求項１または請求項２記載の発明において、リー
ド線ワイヤを接合する電極と絶縁性基板との間に、リー
ド線ワイヤを接合する電極と絶縁性基板との両方に密着
性の高い有機金属化合物から成る薄膜電極を形成したの
で、請求項１または請求項２記載の発明の効果に加え、
使用時の振動の影響によって、絶縁性基板からワイヤ接
合部分の電極が剥離する可能性を少なくし、半導体装置
の信頼性が向上するという効果がある。According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the lead wire is joined between the electrode for joining the lead wire and the insulating substrate. The thin-film electrode made of an organometallic compound having high adhesion is formed on both the electrode to be formed and the insulating substrate.
Due to the influence of vibration during use, the possibility that the electrode at the wire bonding portion is peeled off from the insulating substrate is reduced, and the reliability of the semiconductor device is improved.

【００９９】また、請求項４に記載の半導体装置の製造
方法の発明は、電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合する
ものであるので、他の一般的な溶接法でリード線ワイヤ
を電極に接合する場合に比べて、製造工程でワイヤが破
断し難く、製造工程での歩留まりが改善され、生産効率
を向上でき、線径が細く剛性の低いリード線ワイヤを使
用しても比較的ワイヤが破断し難いという効果がある。Further, according to the invention of the method for manufacturing a semiconductor device according to the fourth aspect, after the electrode is provided on the insulating substrate, the lead wire is joined to the electrode by ultrasonic thermocompression bonding. In comparison with the case where the lead wire is joined to the electrode by other general welding methods, the wire is less likely to break in the manufacturing process, the yield in the manufacturing process is improved, the production efficiency can be improved, and the wire diameter is thinner Even if a lead wire having low rigidity is used, there is an effect that the wire is relatively hard to break.

【０１００】また、請求項５に記載の半導体装置の製造
方法の発明は、電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合し、
さらに、前記リード線ワイヤの接合部を導電性ペースト
で固定するものであるので、請求項４に記載の発明の効
果に加え、接合部でのリード線ワイヤの接合強度が向上
するという効果がある。According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device, after the electrode is provided on the insulating substrate, the lead wire is bonded to the electrode by ultrasonic thermocompression bonding.
Furthermore, since the joining portion of the lead wire is fixed with a conductive paste, in addition to the effect of the invention according to claim 4, there is an effect that the joining strength of the lead wire at the joining portion is improved. .

【０１０１】また、請求項６に記載の半導体装置の製造
方法の発明は、請求項４または請求項５記載の発明にお
いて、電極を、予め絶縁性基板上に設けた有機金属化合
物から成る薄膜電極の上に設けるものであり、予め絶縁
性基板上に、リード線ワイヤを接合する電極と絶縁性基
板との両方に密着性の高い有機金属化合物から成る薄膜
電極を設け、リード線ワイヤを接合する電極をその薄膜
電極の上に設けるため、請求項４または請求項５記載の
発明の効果に加え、振動の影響によって、絶縁性基板か
らワイヤ接合部分の電極が剥離する可能性を少なくし、
半導体装置の信頼性が向上するという効果がある。According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the fourth or fifth aspect, wherein the electrode is formed of an organometallic compound in which an electrode is provided on an insulating substrate in advance. And a thin film electrode made of an organometallic compound having high adhesion to both the electrode for bonding the lead wire and the insulating substrate is provided on the insulating substrate in advance, and the lead wire is bonded. Since the electrode is provided on the thin-film electrode, in addition to the effects of the invention described in claim 4 or claim 5, the possibility that the electrode at the wire bonding portion is separated from the insulating substrate by the influence of vibration is reduced,
This has the effect of improving the reliability of the semiconductor device.

【０１０２】また、請求項７に記載のガスセンサの発明
は、ヒータと、前記ヒータに電気的に接続される一対の
ヒータ用電極と、前記ヒータの発熱により所定温度に加
熱され被検ガス中に暴露されると抵抗値が減少する感応
体膜と、前記感応体膜に電気的に接続される一対あるい
は複数対の感応体用電極とを、絶縁性基板上に設け、リ
ード線ワイヤを前記ヒータ用電極と前記感応体用電極と
に接合したガスセンサにおいて、前記リード線ワイヤ
が、前記ヒータ用電極と前記感応体用電極とに超音波熱
圧着によって接合されているものであるので、ワイヤが
破断し難く、線径が細く剛性の低いリード線ワイヤの使
用が可能となり、線径が細いリード線ワイヤを使用すれ
ば、リード線ワイヤを伝わる熱による放熱が少なくな
り、感応体膜を所定温度に加熱するヒータの消費電力を
低減できるという効果がある。The gas sensor according to the seventh aspect of the present invention includes a heater, a pair of heater electrodes electrically connected to the heater, and a heater which is heated to a predetermined temperature by the heat generated by the heater and is contained in the test gas. A sensitive body film whose resistance value decreases when exposed, and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film are provided on an insulating substrate, and a lead wire is connected to the heater. In the gas sensor joined to the electrode for sensing and the electrode for sensitive body, since the lead wire is joined to the electrode for heater and the electrode for sensitive body by ultrasonic thermocompression bonding, the wire is broken. It is possible to use a lead wire with a small wire diameter and low rigidity.If a wire with a small wire diameter is used, heat radiation due to heat transmitted through the lead wire is reduced, and the sensitive film is heated to a predetermined temperature. There is an effect of reducing the power consumption of the heater for heating.

【０１０３】また、請求項８に記載のガスセンサの発明
は、請求項７記載の発明において、リード線ワイヤの線
径を２０μｍ以上かつ６０μｍ以下としたので、請求項
７記載の発明の効果に加え、ヒータからリード線ワイヤ
を通じての熱伝導が低減され、これにより感応体薄膜を
保持温度に保つヒータの消費電力を低減でき、また、超
音波熱圧着によってリード線ワイヤを破断する可能性が
少なくほぼ確実に接合ができるという効果がある。In the gas sensor according to the eighth aspect of the present invention, the wire diameter of the lead wire is set to 20 μm or more and 60 μm or less in the invention of the seventh aspect. In addition, heat conduction from the heater through the lead wire is reduced, thereby reducing the power consumption of the heater for keeping the sensitive body thin film at a holding temperature, and reducing the possibility of breaking the lead wire by ultrasonic thermocompression. There is an effect that joining can be surely performed.

【０１０４】また、請求項９に記載のガスセンサの発明
は、請求項７または請求項８記載の発明において、リー
ド線ワイヤをAu−Pd合金線としたものであり、請求項７
または請求項８記載の発明の効果に加え、Au−Pd合金線
の伝導率が小さいという特性からリード線ワイヤを伝わ
る熱による放熱が少なくなり、感応体膜を所定温度に加
熱するヒータの消費電力を低減でき、Au−Pd合金線の高
剛性という特性から、ワイヤ強度が確保できワイヤ自身
の断線が起こりにくく、線径が細いリード線ワイヤの使
用が可能となり、線径が細いリード線ワイヤを使用すれ
ば、さらにヒータの消費電力を低減できるという効果が
ある。According to a ninth aspect of the present invention, there is provided a gas sensor according to the seventh or eighth aspect, wherein the lead wire is made of an Au-Pd alloy wire.
Or, in addition to the effect of the invention according to claim 8, since the conductivity of the Au-Pd alloy wire is small, heat dissipation due to heat transmitted through the lead wire is reduced, and the power consumption of the heater for heating the sensitive film to a predetermined temperature is reduced. Because of the high rigidity of the Au-Pd alloy wire, the strength of the wire can be secured, the wire itself is not easily broken, and it is possible to use a lead wire with a small wire diameter. When used, there is an effect that the power consumption of the heater can be further reduced.

【０１０５】また、請求項１０に記載のガスセンサの発
明は、請求項７から請求項９のいずれか一項に記載の発
明において、リード線ワイヤの接合部が導電性ペースト
で固定されているものであり、請求項７から請求項９の
いずれか一項に記載の発明の効果に加え、接合部でのリ
ード線ワイヤの接合強度が向上するという効果がある。According to a tenth aspect of the present invention, there is provided the gas sensor according to any one of the seventh to ninth aspects, wherein a joint portion of the lead wire is fixed with a conductive paste. In addition to the effects of the invention according to any one of claims 7 to 9, there is an effect that the joining strength of the lead wire at the joining portion is improved.

【０１０６】また、請求項１１に記載のガスセンサの発
明は、請求項７から請求項１０のいずれか一項に記載の
発明において、ヒータ用電極と感応体用電極とは、有機
金属化合物から成る薄膜電極を介して絶縁性基板上に設
けられているものであり、リード線ワイヤを接合する電
極と絶縁性基板との間に、リード線ワイヤを接合する電
極と絶縁性基板との両方に密着性の高い有機金属化合物
から成る薄膜電極を形成したので、請求項７から請求項
１０のいずれか一項に記載の発明の効果に加え、センサ
使用時の振動の影響によって、絶縁性基板からワイヤ接
合部分の電極が剥離する可能性を少なくし、ガスセンサ
の信頼性が向上するという効果がある。In the gas sensor according to the eleventh aspect, in the invention according to any one of the seventh to tenth aspects, the heater electrode and the sensitive body electrode are made of an organometallic compound. It is provided on an insulating substrate via a thin film electrode, and is in close contact with both the electrode connecting the lead wire and the insulating substrate between the electrode connecting the lead wire and the insulating substrate. Since the thin-film electrode made of an organometallic compound having a high property is formed, in addition to the effects of the invention according to any one of claims 7 to 10, a wire from the insulating substrate is formed by the influence of vibration during use of the sensor. There is an effect that the possibility that the electrode at the joint portion is peeled is reduced, and the reliability of the gas sensor is improved.

【０１０７】また、請求項１２に記載のガスセンサの製
造方法の発明は、ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、リード線ワイヤを、超音波熱圧着によっ
て前記ヒータ用電極と前記感応体用電極とに接合するも
のであるので、他の一般的な溶接法でリード線ワイヤを
電極に接合する場合に比べて、製造工程でワイヤが破断
し難く、生産効率を向上でき、線径が細く剛性の低いリ
ード線ワイヤの使用が可能となり、線径が細いリード線
ワイヤを使用することにより、リード線ワイヤを伝わる
熱による放熱が少なくなり、感応体膜を所定温度に加熱
するヒータの消費電力を低減できるという効果がある。According to a twelfth aspect of the present invention, there is provided a gas sensor manufacturing method, comprising: a heater; a pair of heater electrodes electrically connected to the heater; After providing a sensitive body film whose resistance value decreases when exposed to a gas and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead is provided. Since the wire wire is bonded to the electrode for the heater and the electrode for the sensitive body by ultrasonic thermocompression bonding, compared with the case where the lead wire is bonded to the electrode by another general welding method, the manufacturing is It is difficult to break the wire in the process, it is possible to improve production efficiency, it is possible to use a lead wire with a small wire diameter and low rigidity, and by using a lead wire with a small wire diameter, the heat transmitted through the lead wire Low heat dissipation No longer, there is an effect that the sensitivity film can reduce the power consumption of the heater for heating to a predetermined temperature.

【０１０８】また、請求項１３に記載のガスセンサの製
造方法の発明は、ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、リード線ワイヤを、超音波熱圧着によっ
て前記ヒータ用電極と前記感応体用電極とに接合し、さ
らに、前記リード線ワイヤの接合部を導電性ペーストで
固定するものであるので、請求項１２に記載の発明の効
果に加え、接合部でのリード線ワイヤの接合強度が向上
するという効果がある。According to a thirteenth aspect of the present invention, there is provided a gas sensor manufacturing method, comprising: a heater; a pair of heater electrodes electrically connected to the heater; After providing a sensitive body film whose resistance value decreases when exposed to a gas and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead is provided. The wire wire is joined to the electrode for heater and the electrode for sensitive body by ultrasonic thermocompression bonding, and furthermore, the joining portion of the lead wire is fixed with a conductive paste, so that the wire wire is used. In addition to the effects of the invention, the bonding strength of the lead wire at the bonding portion is improved.

【０１０９】また、請求項１４に記載のガスセンサの製
造方法の発明は、請求項１２または請求項１３記載の発
明において、ヒータ用電極と感応体用電極とを、予め絶
縁性基板上に設けた有機金属化合物から成る薄膜電極の
上に設けるものであり、予め絶縁性基板上に、リード線
ワイヤを接合する電極（ヒータ用電極と感応体用電極）
と絶縁性基板との両方に密着性の高い有機金属化合物か
ら成る薄膜電極を設け、リード線ワイヤを接合する電極
（ヒータ用電極と感応体用電極）をその薄膜電極の上に
設けるため、請求項１２または請求項１３記載の発明の
効果に加え、振動の影響によって、絶縁性基板からワイ
ヤ接合部分の電極が剥離する可能性を少なくし、ガスセ
ンサの信頼性が向上するという効果がある。According to a fourteenth aspect of the present invention, there is provided a gas sensor manufacturing method according to the twelfth or thirteenth aspect, wherein the heater electrode and the sensitive body electrode are provided on an insulating substrate in advance. An electrode (heater electrode and sensitive body electrode) that is provided on a thin film electrode made of an organometallic compound, and in which a lead wire is bonded on an insulating substrate in advance.
In order to provide a thin-film electrode made of an organometallic compound having high adhesion on both the substrate and the insulating substrate, and to provide electrodes (a heater electrode and a sensitive body electrode) for joining lead wires on the thin-film electrode, In addition to the effects of the invention described in the twelfth or thirteenth aspect, there is an effect that the possibility that the electrode at the wire bonding portion is separated from the insulating substrate due to the influence of vibration is reduced, and the reliability of the gas sensor is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明によるガスセンサの実施の形態１の断面
図FIG. 1 is a sectional view of a gas sensor according to a first embodiment of the present invention.

【図２】同実施の形態におけるリード線ワイヤの線径に
対する消費電力の関係を示す特性図FIG. 2 is a characteristic diagram showing a relationship between power consumption and a wire diameter of a lead wire in the embodiment.

【図３】同実施の形態におけるリード線ワイヤの材料に
対する消費電力の関係を示す特性図FIG. 3 is a characteristic diagram showing a relationship between power consumption and a material of a lead wire according to the embodiment.

【図４】本発明によるガスセンサの実施の形態２の断面
図FIG. 4 is a sectional view of a gas sensor according to a second embodiment of the present invention;

【図５】本発明によるガスセンサの実施の形態３の断面
図FIG. 5 is a sectional view of a gas sensor according to a third embodiment of the present invention.

【図６】従来のガスセンサの上面図FIG. 6 is a top view of a conventional gas sensor.

【図７】従来のガスセンサの底面図FIG. 7 is a bottom view of a conventional gas sensor.

【図８】従来のガスセンサの部分断面図FIG. 8 is a partial sectional view of a conventional gas sensor.

【符号の説明】[Explanation of symbols]

１ 基板 ２ ヒータ ３ ヒータ用電極 ６ リード線ワイヤ ７ 導電性ペースト ８ 感応体用電極 ９ 感応体膜 １１ 薄膜電極 DESCRIPTION OF SYMBOLS 1 Substrate 2 Heater 3 Heater electrode 6 Lead wire 7 Conductive paste 8 Sensitive body electrode 9 Sensitive body film 11 Thin film electrode

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井上 義勝 大阪府東大阪市高井田本通４丁目２番５号 松下冷機株式会社内 (72)発明者 服部 章良 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 吉池 信幸 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 2G046 AA21 AA23 BA01 BB02 BC03 BC05 BC09 BE03 DB04 DB05 EA09 FA00 FB02 FE00 FE29 FE31 FE39 FE48 5F044 CC02 CC07 EE04 EE06  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshikatsu Inoue 4-5-2-5 Takaidahondori, Higashiosaka-shi, Osaka Inside Matsushita Refrigerating Machinery Co., Ltd. Within Sangyo Co., Ltd. (72) Inventor Nobuyuki Yoshiike 1006 Kazuma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.F-term (reference) CC02 CC07 EE04 EE06

Claims (14)

【特許請求の範囲】[Claims] 【請求項１】 電極を絶縁性基板上に設け、リード線ワ
イヤを前記電極に接合した半導体装置であって、 前記リード線ワイヤは、前記電極に超音波熱圧着によっ
て接合されていることを特徴とする半導体装置。1. A semiconductor device in which an electrode is provided on an insulating substrate and a lead wire is joined to the electrode, wherein the lead wire is joined to the electrode by ultrasonic thermocompression bonding. Semiconductor device. 【請求項２】 リード線ワイヤの接合部が導電性ペース
トで固定されていることを特徴とする請求項１記載の半
導体装置。2. The semiconductor device according to claim 1, wherein a joint portion of the lead wire is fixed with a conductive paste. 【請求項３】 電極は、有機金属化合物から成る薄膜電
極を介して絶縁性基板上に設けられていることを特徴と
する請求項１または請求項２に記載の半導体装置。3. The semiconductor device according to claim 1, wherein the electrode is provided on the insulating substrate via a thin-film electrode made of an organometallic compound. 【請求項４】 電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合する
ことを特徴とする半導体装置の製造方法。4. A method for manufacturing a semiconductor device, comprising: providing an electrode on an insulating substrate; and bonding a lead wire to the electrode by ultrasonic thermocompression bonding. 【請求項５】 電極を絶縁性基板上に設けた後、リード
線ワイヤを、超音波熱圧着によって前記電極に接合し、
さらに、前記リード線ワイヤの接合部を導電性ペースト
で固定することを特徴とする半導体装置の製造方法。5. After the electrode is provided on the insulating substrate, a lead wire is bonded to the electrode by ultrasonic thermocompression bonding.
Furthermore, a method of manufacturing a semiconductor device, wherein the bonding portion of the lead wire is fixed with a conductive paste. 【請求項６】 電極を、予め絶縁性基板上に設けた有機
金属化合物から成る薄膜電極の上に設けることを特徴と
する請求項４または請求項５記載の半導体装置の製造方
法。6. The method for manufacturing a semiconductor device according to claim 4, wherein the electrode is provided on a thin-film electrode made of an organometallic compound previously provided on an insulating substrate. 【請求項７】 ヒータと、前記ヒータに電気的に接続さ
れる一対のヒータ用電極と、前記ヒータの発熱により所
定温度に加熱され被検ガス中に暴露されると抵抗値が減
少する感応体膜と、前記感応体膜に電気的に接続される
一対あるいは複数対の感応体用電極とを、絶縁性基板上
に設け、リード線ワイヤを前記ヒータ用電極と前記感応
体用電極とに接合したガスセンサであって、 前記リード線ワイヤは、前記ヒータ用電極と前記感応体
用電極とに超音波熱圧着によって接合されていることを
特徴とするガスセンサ。7. A heater, a pair of heater electrodes electrically connected to the heater, and a responsive element which is heated to a predetermined temperature by the heat generated by the heater and decreases in resistance when exposed to a test gas. A film and a pair or a plurality of pairs of sensitive body electrodes electrically connected to the sensitive body film are provided on an insulating substrate, and a lead wire is bonded to the heater electrode and the sensitive body electrode. The gas sensor, wherein the lead wire is joined to the heater electrode and the sensitive body electrode by ultrasonic thermocompression bonding. 【請求項８】 リード線ワイヤの線径が２０μｍ以上か
つ６０μｍ以下であることを特徴とする請求項７記載の
ガスセンサ。8. The gas sensor according to claim 7, wherein the wire diameter of the lead wire is not less than 20 μm and not more than 60 μm. 【請求項９】 リード線ワイヤをAu−Pd合金線としたこ
とを特徴とする請求項７または請求項８記載のガスセン
サ。9. The gas sensor according to claim 7, wherein the lead wire is an Au—Pd alloy wire. 【請求項１０】 リード線ワイヤの接合部が導電性ペー
ストで固定されていることを特徴とする請求項７から請
求項９のいずれか一項に記載のガスセンサ。10. The gas sensor according to claim 7, wherein a joint of the lead wire is fixed with a conductive paste. 【請求項１１】 ヒータ用電極と感応体用電極とは、有
機金属化合物から成る薄膜電極を介して絶縁性基板上に
設けられていることを特徴とする請求項７から請求項１
０のいずれか一項に記載のガスセンサ。11. The heater electrode and the sensitive body electrode are provided on an insulating substrate via a thin film electrode made of an organometallic compound.
0. The gas sensor according to any one of 0. 【請求項１２】 ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、リード線ワイヤを、超音波熱圧着によっ
て前記ヒータ用電極と前記感応体用電極とに接合するこ
とを特徴とするガスセンサの製造方法。12. A heater, a pair of heater electrodes electrically connected to the heater, and a sensible body which is heated to a predetermined temperature by the heat generated by the heater and has a reduced resistance value when exposed to a test gas. After providing a film and one or more pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead wire is connected to the heater electrode by ultrasonic thermocompression bonding. A method of manufacturing a gas sensor, wherein the gas sensor is bonded to the electrode for a sensitive body. 【請求項１３】 ヒータと、前記ヒータに電気的に接続
される一対のヒータ用電極と、前記ヒータの発熱により
所定温度に加熱され被検ガス中に暴露されると抵抗値が
減少する感応体膜と、前記感応体膜に電気的に接続され
る一対あるいは複数対の感応体用電極とを、絶縁性基板
上に設けた後、 リード線ワイヤを、超音波熱圧着によって前記ヒータ用
電極と前記感応体用電極とに接合し、 さらに、前記リード線ワイヤの接合部を導電性ペースト
で固定することを特徴とするガスセンサの製造方法。13. A heater, a pair of heater electrodes electrically connected to the heater, and a responsive body which is heated to a predetermined temperature by the heat generated by the heater and has a reduced resistance value when exposed to a test gas. After providing a film and a pair or a plurality of pairs of sensitive body electrodes electrically connected to the sensitive body film on an insulating substrate, a lead wire is connected to the heater electrode by ultrasonic thermocompression bonding. A method for manufacturing a gas sensor, comprising: bonding to a sensing element electrode; and fixing a bonding portion of the lead wire with a conductive paste. 【請求項１４】 ヒータ用電極と感応体用電極とを、予
め絶縁性基板上に設けた有機金属化合物から成る薄膜電
極の上に設けることを特徴とする請求項１２または請求
項１３記載のガスセンサの製造方法。14. The gas sensor according to claim 12, wherein the heater electrode and the sensitive body electrode are provided on a thin-film electrode made of an organometallic compound provided on an insulating substrate in advance. Manufacturing method.
JP2001152076A 2001-05-22 2001-05-22 Semiconductor device, manufacturing method for semiconductor device, gas sensor and manufacturing method for gas sensor Pending JP2002340832A (en)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530003B1 (en) * 2003-06-30 2005-11-21 (주)센텍코리아 Gas Sensor Chip of Thick Film Type
KR100799810B1 (en) 2007-02-01 2008-01-31 유도준 Gas sensor entire set of pcb which has a chip of structure feasible for layer and parallel mount
CN100420939C (en) * 2003-07-18 2008-09-24 费加罗技研株式会社 Gas sensor and producing method thereof
JP2021043061A (en) * 2019-09-11 2021-03-18 東京窯業株式会社 Method for using solid electrolyte sensor and solid electrolyte sensor
KR20220040634A (en) * 2020-09-24 2022-03-31 황인성 Integrated Gas Sensor Assembly and Its Manufacturing Method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530003B1 (en) * 2003-06-30 2005-11-21 (주)센텍코리아 Gas Sensor Chip of Thick Film Type
CN100420939C (en) * 2003-07-18 2008-09-24 费加罗技研株式会社 Gas sensor and producing method thereof
KR100799810B1 (en) 2007-02-01 2008-01-31 유도준 Gas sensor entire set of pcb which has a chip of structure feasible for layer and parallel mount
JP2021043061A (en) * 2019-09-11 2021-03-18 東京窯業株式会社 Method for using solid electrolyte sensor and solid electrolyte sensor
KR20220040634A (en) * 2020-09-24 2022-03-31 황인성 Integrated Gas Sensor Assembly and Its Manufacturing Method
KR102430465B1 (en) 2020-09-24 2022-08-05 황인성 Integrated Gas Sensor Assembly and Its Manufacturing Method

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