JP3408910B2 - Gas sensor and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a metal oxide semiconductor gas sensor, and more particularly to connection of a sensor body to an external terminal.

[0002]

BACKGROUND OF THE INVENTION The main requirements for metal oxide semiconductor gas sensors are to reduce power consumption and reduce the cost of the power supply circuit required to drive the gas sensor. For this purpose, it is necessary to use printing technology or thin film technology to miniaturize the gas sensor and reduce the heat conduction of the leads used in the gas sensor. That is, the lead occupies a major part of heat radiation from the gas sensor, and in order to reduce power consumption, it is necessary to use a material with low thermal conductivity for the lead and to reduce the wire diameter of the lead.

An application of interest for metal oxide semiconductor gas sensors is the detection of CO. In this case, the temperature of the gas sensor is periodically changed to heat-clean the metal oxide semiconductor of the gas sensor by heating to a high temperature, and the output of the metal oxide semiconductor film at the low temperature side has selectivity to CO. It is used to detect CO. This means that the gas sensor is constantly subjected to thermal shock.

The inventor has encountered the following problems in the process of developing a gas sensor which consumes less power and is suitable for detecting CO. 1) When plain gold is used for the thick film electrode pad for connecting the lead, the pad peels from the substrate due to repeated temperature changes. 2) If platinum is used for the thick film electrode pad to avoid this, it becomes difficult to connect the leads. 3) Pt-W wire (Pt suitable for leads with low power consumption)
-W alloy wire) and APM wire (Au-Pd-Mo alloy wire)
, It is difficult to connect to a pad, and a platinum pad cannot provide sufficient connection strength. Therefore, in order to obtain a gas sensor with low power consumption and high durability against temperature changes, a thick film electrode pad that has high adhesion to the substrate and excellent connection performance with leads is required.

As a related prior art, Japanese Patent Laid-Open No. 3-130654 discloses the following gas sensor. That is, the metal oxide semiconductor film is arranged on one main surface of the substantially square substrate and the heater film is arranged on the opposite main surface. The electrode connected to the metal oxide semiconductor film is guided to the heater film side through the through hole, and a thick film electrode pad made of platinum is connected to the heater film and the metal oxide semiconductor film. Then, the leads are connected to these electrode pads by thermocompression bonding. As a result, the electrode pads are aligned on the heater film side, and both main surfaces of the substrate are connected by through holes. However, since the electrode pad is platinum, it is difficult to connect a lead having high resistance and low thermal conductivity such as Pt-W or APM wire, and there is a limit to the reduction of power consumption.

As another prior art, Japanese Patent Laid-Open No. 60-
JP209161 discloses using a thick film platinum electrode pad for lead connection to a ZrO ₂ oxygen sensor, connecting Pt leads by thermocompression bonding or spot welding, and coating the weld with platinum paste. . In this way, the lack of connection strength between the platinum pad and the platinum lead can be improved by coating with the platinum paste. However, this publication
It does not provide a pad material that is excellent in both the adhesion to the substrate and the connection performance with the leads. Also, the coating with platinum paste is problematic in the case of metal oxide semiconductor gas sensors. That is, the baking of the platinum paste requires a temperature of about 900 ° C., which is higher than the maximum baking temperature (usually about 600 to 700 ° C.) of the metal oxide semiconductor for gas detection and deteriorates the metal oxide semiconductor. Furthermore, neither of the prior arts suggests that the adhesive force between the pad and the substrate becomes a problem when the temperature change is repeatedly applied to the gas sensor.

[0007]

[Problem of the invention is an object of the present invention, and durability against falling or vibration of the gas sensor, and improve both the durability against repeated temperature changes is to further reduce the power consumption (claims 1 to 5 ). Another object of the present invention is to facilitate attachment of the lead to the gas sensor (Claim 4).

[0008]

According to the present invention, a heat-resistant insulating substrate is provided with a metal oxide semiconductor film whose resistance value changes with gas, a heater film and a plurality of thick film electrode pads, and the plurality of thick film electrode pads are provided with In a gas sensor in which a metal oxide semiconductor film, the heater film, and leads are connected, the plurality of thick film electrode pads are made of an alloy of Au-Pt, Au-Pd, or Au-Rh, and the leads are Pt. -W, Au
-Pd-Mo, made from either _{Pt-ZrO 2, Pt-Pd} , further covers the connecting portion between the lead and the thick film electrode pads in a thick film.

Here, the substrate is alumina, silica, ZrO ₂
A heat-resistant insulating substrate such as the above is used to form, for example, a square shape or a rectangular shape, and the metal oxide semiconductor film, the heater film, and the thick film electrode pad are arranged. The metal oxide semiconductor film and the heater film may be thin or thick, but the electrode pads are thick. This is because the adhesive force between the substrate and the pad is insufficient with the thin film pad, and the pad is easily peeled off during thermocompression bonding or welding of the lead. The film thickness of the electrode pad is, for example, 2 to 50 μm, preferably 5 to 20 μm. Material of electrode pad contains gold
Au-Pt, Au-Rh, Au-Pd
There is. The electrode pad may be formed of a single layer using these alloys, but for example, the base is platinum and the top is gold.
You may form into a layer. In such a two-layer pad, the components of the upper layer and the components of the lower layer are mixed and alloyed. An Au-Pt alloy is particularly preferable as the electrode pad, and even if the electrode pad is formed as an alloy from the beginning, or if the lower layer is platinum,
The upper layer is formed as gold, and the upper layer and the lower layer are alloyed to form Au.
It may be a -Pt alloy pad. In addition, both the front and back main surfaces of the board
On one of its main surfaces, a SnO ₂ film, a ZnO film, an I
A metal oxide semiconductor film such as n ₂ O ₃ is arranged on the other main surface.
A heater film such as RuO ₂ or Pt is arranged. And of the main surface
Place the thick film electrode pad on one side and
-Connect with a hole. In addition to the through holes, for example, a conductive film or the like provided on the end portion or side surface of the substrate may be used for the connection with the main surface on the opposite side. By doing so, it is possible to reduce the board area, reduce the power consumption, and align the lead mounting surface with one surface to facilitate mounting.

In order to reduce the power consumption of the gas sensor,
The lead is composed of a high resistance wire, and the high resistance wire generally has a low thermal conductivity. The type of wire is Pt-W wire (W content 2
~ 12 wt%), APM line (Pd content 10-60
Wt%, Mo content 1-10 wt%, the rest
Gold), Pt-ZGS line (ZrO ₂ is deposited at the grain boundary of Pt.
The content of Pt-ZrO ₂ alloy and ZrO _{2 that} were taken out was 1 to 0.
01 wt%), Pt-Pd wire (Pd content 5-60
Weight%). These are noble metal alloy wires, and particularly preferred are Pt-W wires and APM wires.

The method of using the gas sensor is arbitrary, but the present invention is particularly suitable when the temperature of the gas sensor is changed periodically. When the temperature of the gas sensor is periodically changed, thermal shock is repeatedly applied to the interface between the electrode pad and the substrate, and the pad is peeled off. To solve this problem, the present invention improves the adhesive force between the substrate and the pad and prevents the peeling of the pad by using a thick film electrode pad of gold alloy. The gold alloy pad can be easily connected to the lead, and sufficient connection strength can be obtained even if a high resistance noble metal alloy wire that is difficult to connect is used. Since the noble metal alloy wire can be used, heat loss from the leads can be suppressed and the power consumption of the gas sensor can be reduced.

Next, the connecting portion between the lead and the thick film electrode pad is thickened.
When coated with a film, the coated thick film leads to pads
Can be fixed. As a result, the connection strength between the lead and the pad can be improved. Thick film materials include Au, Au-Pt, Au-
Rh or the like is used. The thick film material is applied, for example, as a paste to the connection portion and is baked and solidified. Here, gold is preferable for the thick-film coating material because it can be easily fired at a low temperature in order to lower the firing temperature and prevent alteration of the metal oxide semiconductor. Further, gold is a material that is easily bonded to the pads and the leads, and gold is preferable in order to increase the connection strength of the leads. Furthermore, based on the electrode pad
Four pieces are provided on one main surface of the plate, and these are arranged at the vertices of the quadrangle
Then, connect one lead for each electrode pad and
To the diagonal of the quadrangle passing through the electrode pad
Place the leads in parallel.

To connect the lead and the thick film electrode pad, welding such as parallel gap welding, fixing with a thick film of gold paste or ultrasonic thermocompression bonding is used. When parallel gap welding and ultrasonic thermocompression bonding are compared here, welding is superior in workability. However, in welding, the lead cannot be cut on the pad by the welding itself, and it is necessary to cut the lead in another step. Fusing is preferably used for this step. That is, when one lead is welded to two pads on the substrate, the lead remains between the pads. Then these two
When a large fusing current is applied to the lead between two pads, the lead is fused due to heat generation. For example, initially, two leads are arranged in a cross shape, and each lead is located at the two corners of the quadrangle.
Connect so that the two pads are tied together. After that, when the two leads are melted and cut, the leads extend outward in a cross shape from the substrate. In this case, each lead is substantially parallel to the diagonal of the quadrangle. Since the leads extend in a cross shape from the substrate, the durability of the gas sensor is increased against vibrations and external forces in various directions.

The present invention also provides a heat-resistant insulating substrate for gas.
A metal oxide semiconductor film and a heater film whose resistance value changes more
A plurality of thick film electrode pads are provided, and the plurality of thick film electrode pads are provided.
The metal oxide semiconductor film, the heater film, and the lead
In a method of manufacturing a gas sensor connected to a battery, the Au-
Made of any alloy of Pt, Au-Pd and Au-Rh
A step of forming a thick film electrode pad on an insulating substrate,
Thick film electrode pad, Pt-W, Au-Pd-Mo, Pt
-ZrO _2, connection from one of Pt-Pd and lead
Part with thick film, where the leads are crossed to the frame.
Attach the lead to the thick film electrode pad in the tensioned state
And coat with the thick film.

[0015]

In the present invention, the gold alloy is used for the thick film electrode pad of the gas sensor. As a result, the adhesive force between the pad and the substrate is high, and the pad is not peeled from the substrate even if the temperature change is repeatedly applied to the gas sensor. The gold alloy pad has a high connection strength with the lead, and the connection strength of the lead can be kept high even if a precious metal alloy wire or the like having a small thermal conductivity is used for the lead, and since it is covered with a thick film, the connection strength is improved.
Can be improved further. In addition, 4 electrode pads are provided on one main surface of the substrate.
Individually arranged and placed at the four vertices of the quadrangle, and the leads
Placing the leads substantially parallel to the square wire will allow the leads to move away from the substrate.
Since it extends in a letter shape, it is possible to respond to vibrations and external forces in various directions.
The durability of the gas sensor is increased. As a result, the power consumption of the gas sensor can be reduced. Further, the gas sensor of the present invention
In this manufacturing method, the power consumption is small and the lead to the pad is
A gas sensor with high connection strength can be obtained.

The lead and the pad may be connected by welding such as parallel gap welding, thermocompression bonding such as ultrasonic thermocompression bonding, or fixing with a protective film made of a thick film such as gold, but it is preferable. Connect the leads by welding or thermocompression and cover the connection with a thick protective film. By doing so, the connection strength between the lead and the pad is increased. The preferred protective film is
Gold that is easy to fire at low temperatures and has excellent adhesion to leads.

Next, when the lead is connected to the pad by welding or a protective film, the lead can be easily cut on the pad by using fusing. Here, for example, when there are four electrode pads, if the leads are arranged substantially parallel to the diagonal line of the quadrangle connecting the four pads, the directions of the leads are different, so the substrate is supported flatly by the four leads. Therefore, the substrate can be held against vibrations and external forces from various directions. For this purpose, the leads may be arranged along the diagonal lines of the quadrangle, connected, and then blown.

[0018]

Embodiments FIGS. 1 to 13 show an embodiment and its modification. In addition, in each modification, it implements like an Example except the point especially pointed out. FIG. 1 shows a main part of a gas sensor of the embodiment, 2 is a sensor body, 4 is alumina, silica,
A heat resistant insulating substrate such as ZrO ₂ and 6a to 6d are four thick film electrode pads, which are gathered on one main surface 5 of the substrate 4. Each electrode pad 6 is made of a gold alloy and is made of Au-Pt, Au-R.
h, Au-Pd is used, and an Au-Pt alloy is used in the embodiment. The thickness of the electrode pad 6 is, for example, 2 to 50 μm, preferably 5 to 20 μm, which is a thickness that enhances the adhesive force with the substrate 4 and can be formed by printing once or twice. Furthermore, considering that the composition may change in the depth direction of the pad 6, the Au content in the pad 6 is an average in the pad 6,
The amount is 5 to 95% by weight, preferably 20 to 80% by weight.
Reference numeral 8 denotes a heater film made of a RuO ₂ film (film thickness of about 10 μm) or a thin film of Pt or the like. In the case of the RuO ₂ film, for example, an insulating film made of overcoat glass is provided on the surface. Further, heater electrodes 10a and 10b are connected to the heater film 8. The heater electrodes 10a and 10b are connected to the electrode pads 6a and 6 described above.
Connect to b.

A metal oxide semiconductor film 12 such as a SnO ₂ film having a film thickness of, for example, 10 μm is provided on the main surface 7 on the opposite side of the substrate 4, a pair of electrodes 14a and 14b are connected, and a conductive film is provided on the inner wall. Through the through hole 16, the electrode pad 6c,
Connect to 6d. As shown in FIG. 3, a conductive film may be provided at the top end portion of the substrate 4 or the like, and the through hole 16 may be used instead. Such an example is shown in FIG. 3, 3 is a new sensor body, and 17a and 17b are new electrodes. The electrodes 10 and 14 may be made of the same material as the pad 6 or different materials, and the film thickness may be the same as or different from that of the pad 6.

Returning to FIGS. 1 and 2, 20 is a lead made of a noble metal alloy wire, and 22 is a pin as an external terminal to which the lead 20 is welded. The lead 20 is Pt-W or Au-
An alloy wire having a high resistance and a small thermal conductivity such as Pd-Mo is used, and a particularly preferable one is a Pt-W wire which has a small thermal conductivity and is easily connected to the pad 6. The wire diameter of the lead 20 is, for example, 20 to 60 μm, and more preferably 30 to 50 μm.
μm. Further, reference numeral 24 is a thick protective film formed by baking a gold paste, which covers the connection portion between the pad 6 and the lead 20 and may be omitted if the connection strength between the lead 20 and the pad 6 is sufficiently high.

FIG. 4 shows a connecting portion of the lead 20 to the pad 6. The pad 6 is made of a gold alloy in order to increase the adhesion to the substrate 4, and FIG. 4 shows an example in which an upper layer 26 made of plain gold is laminated on a lower layer 24 made of plain platinum. However, as shown in FIG. 5, the lower layer 24 and the upper layer 26 are alloyed in the firing process of the upper layer 26, etc., and what is actually obtained is an alloy pad of gold and platinum. For example, the inventor
After printing to m thickness and baking at 850 ° C., the gold upper layer 26 is
Printed to a thickness of μm and baked at 850 ° C. The surface of the obtained alloy pad did not have a gold color but the color of a silver-white gold-Pt alloy. Thus, gold and platinum are easily alloyed, so that what is actually obtained is a gold-platinum alloy even when two layers are printed with different compositions. Further, alloying was not limited to Au-Pt, but occurred with other materials such as Au-Rh and Au-Pd.

Reference numerals 28 and 28 denote welds formed by parallel gap welding, and ultrasonic thermocompression bonding may be used for connecting the leads 20 and the pads 6 to each other. Alternatively, welding or thermocompression bonding is not performed, and a protective film is simply used. Pad the lead 20 with 27
Just fix it to. Reference numeral 30 is a fusing portion of the lead 20. In the case of the embodiment of FIG. 1, two leads are prepared, one of them is arranged so as to connect the pads 6a and 6c, and parallel gap welding is performed. Similarly, the other lead is connected to the pad 6b,
It is arranged so as to connect 6d, and parallel gap welding is performed. Next, a pair of welding electrodes are brought into contact with the leads in the vicinity of the fusing part 30, and a large current is passed between the pads 6a and 6c and between the pads 6b and 6d. Between the pads, the leads are floated from the substrate 4 and there is no escape area for heat, so the leads are cut. At this time, the fusing part 30 is formed at the end of the lead 20.

The characteristics of the obtained gas sensor are shown below. The substrate 4 has a rectangular shape with a thickness of 0.5 mm, and has a horizontal length of 1 mm in FIG. 1 and a vertical length of 0.9 mm in FIG. The metal oxide semiconductor film 12 is SnO ₂ (film thickness of about 1
0 μm) and the baking temperature after printing SnO ₂ is 70
It is 0 ° C. When the pad 6 is a single layer and is initially alloyed, the thickness is 7 μm. When alloying two layers with platinum as the lower layer and gold as the upper layer, a pad having a total thickness of 14 μm including a platinum layer of 7 μm and a gold layer of 7 μm was used.
Next, in the lead 20, a platinum wire (wire diameter 40 μm, wire diameter indicates diameter), a Pt-ZGS wire (wire diameter 50 μm, a wire in which ZrO ₂ is deposited on the crystal grain boundary of Pt, and the ZrO ₂ content is Is about 0.06 wt%), APM wire (wire diameter 40 μm, Au55
% By weight, Pd 40% by weight, Mo 5% by weight), and Pt-W wire (wire diameter 40 μm, Pt 92% by weight, W8% by weight), and these wire rods are manufactured by Tanaka Kikinzoku Kogyo. Pad 6
The welding condition (parallel gap welding) is that the welding voltage is 5 V and the welding current is applied for 11 ms. Further, gold paste is used as the material of the protective film 27, and 70
Baked at 0 ° C.

The use condition of the sensor is that the temperature change is 3 per cycle.
Within 0 seconds, the high temperature range is 10 seconds and the low temperature range is 20 seconds. The maximum temperature in the high temperature range is about 400 ° C. and the final temperature in the low temperature range is about room temperature. The output of the sensor was sampled, for example, immediately before the end of the low temperature range, and this heat cycle was repeatedly applied for one year. The connection strength of the lead 20 is determined by connecting the sensor main body 2 to the pin 22 as shown in FIG.
Is expressed by the strength when the lead 20 is detached by pulling upward with a jig. Most of the positions where the leads 20 come off are the connecting portions between the pads 6 and the leads 20. In FIG. 6, reference numeral 32 is a base.

FIG. 7 shows changes in power consumption (average power consumption in one cycle) depending on the type of the lead 20. The power consumption decreases from Pt line to Pt-W line, and Pt-W line and APM
Lines, especially Pt-W lines are preferred.

FIG. 8 shows the durability of the pad 6 against the temperature cycle and the connection strength of the lead 20. The durability of the pad 6 indicates the number of times the durability against the heat cycle between around 400 ° C. and around room temperature in the above 30 second cycle. This value is the average of 5 sensors, and the average value is 66 for a plain Au pad.
The pad 6 was peeled from the substrate 4 after 20 times. This is only 55 hours of using the sensor. On the other hand, Pt pads and Au-Pt alloy pads (two types: an Au-Pt alloy having a film thickness of 7 µm from the beginning, and a platinum layer having a thickness of 7 µm and a gold layer having a thickness of 7 µm).
All underwent a one-year durability test and no pad peeling occurred. The one-year durability test has a temperature change cycle number of 1.05 million times.

By changing the type of the pad 6, a Pt-W line or an A
The PM wire connection strength (total strength of the four leads) was about 10 g without the protective film 27 for the Pt pad, and about 40 g with the protective film 27. On the other hand, with gold pads and gold-platinum alloy pads, 2
A connection strength of about 0 g and about 80 g with a protective film was obtained. This indicates that the platinum pad lacks the connection strength with the lead, and by using the gold-platinum alloy pad 6, the adhesion with the substrate 4 is excellent and the connection strength with the lead 20 is increased. . Moreover, as is clear from FIG.
The t-W line has a higher connection strength to the pad 6 than the APM line. The inventor has formed a two-layer pad of Rh-gold, Pd-gold, etc. in addition to platinum-gold. Gold is the upper layer, Rh
And Pd are lower layers, and the film thickness is 7 μm for both upper and lower layers.
In any of these cases, alloying of gold with Rh or Pd occurred, and a connection strength of about 20 g (without protective film 27) was obtained for the Pt-W wire.

As is clear from the above, 1) the power consumption of the gas sensor is reduced by using a noble metal alloy wire such as Pt-W, APM, etc., and 2) by using the gold alloy pad, the gas sensor with respect to the temperature change. It is possible to improve the durability of the pad and to keep the connection strength of the lead to the pad high. 3) In order to further increase the connection strength of the leads, it is preferable to connect the leads 20 to the pads 6 by parallel gap welding, ultrasonic thermocompression bonding, or the like, and then cover with the protective film 27. The preferred material for the protective film 27 is gold, which can be baked at a low temperature, does not damage the metal oxide semiconductor film 12, and can be easily bonded to the pad 6 or the lead 20.

[0029]

[Fusing] FIGS. 9 to 12 show details of the fusing process. Figure 9,
FIG. 10 shows the fusing part 30 of the lead 20. As shown in FIG. 10, the fusing part 30 has a different shape from that obtained by cutting the lead 20 by another method, and the fusing part 30 is characterized by being rounded. For example, reference numeral 36 in FIG.
0 shows the shape when the tip is cut, and 38 is the lead 2
The shape when the tip of 0 is pulled apart and shown is shown.

FIG. 11 shows the fusing step. After the lead 20 is welded to the pad 6 by parallel gap welding, for example, a pair of electrodes 40, 40 is arranged and a fusing current i is applied. Between the pads 6a, 6c, etc., the leads 20 are connected to the substrate 4
Even if the heater film 8 comes out of contact with the heater film 8 and comes into contact with the heater film 8, the surface of the heater film 8 is insulated by the overcoat glass. Therefore, the fusing current flows in the lead 20, and the heat generation causes the lead 20 to melt.

FIG. 12 shows a method of connecting the leads 20 in the embodiment. 12) shows a state in which the leads 20 are attached to the metal frame 50 by welding or the like, and then the sensor main body 2 is positioned with respect to the frame 50 using an appropriate jig. This state is shown in 2) of FIG. Next, the lead 20 is welded to the pads 6a to 6d by parallel gap welding, for example. After this, the lead 20 is melted (3 in FIG. 12)).
After that, a gold paste is applied and the entire frame 50 is heated to form the protective film 27. Then, the base 32 of the gas sensor is positioned and the lead 20 is welded to the pin 22. It is generally difficult to cut the lead 20 at the same time as welding to the electrode pad 6, but at the same time as welding to the pin 22, the lead 20 is cut.
Can be cut, and preferably the lead 20 is cut simultaneously with welding to the pin 22 (4 in FIG. 12). In this way, the base 32 is independent of the frame 50, and the pins 2
The mounting of the sensor body 2 to the 2 is completed. As is clear from 4) of FIG. 12, the orientations of the four lead wires are changed by approximately 90 degrees, and the lead wires are substantially parallel to the diagonal line of the quadrangle formed by the four pads 6 (the deviation of the angle from the diagonal line is ± 15 degrees or less)
Is. As a result, the sensor main body 2 moves in the X direction in FIG.
Withstanding the force in any of the Y directions, the mounting strength of the sensor body 2 increases.

FIG . 13 shows a gas sensor of the reference example . In the figure, 70 is a new sensor body, 72 is a lead frame, and 74 is its lead. For the lead frame 72, a base metal alloy such as SUS316 or iron-chromium-aluminum is used. For example, the lead 74 has a cross section of 20 to 50.
It is about μm square. In the sensor body 70, a pair of metal oxide semiconductor films 76 and 78 are arranged on the back surface of the substrate 4, and for example, the metal oxide semiconductor film 76 close to the heater film 8 is used as a metal oxide semiconductor film for methane detection. The metal oxide semiconductor film 78 far from is a metal oxide semiconductor film for carbon monoxide detection. The pads 6b are connected to the front and back of the substrate 4 through the through holes 16, and the metal oxide semiconductor film 76,
Used as a common pad for 78.

The reference example of FIG. 13 is similar to the gas sensor of FIG. 1 except that a base metal rectangular lead 74 is used as a lead and a pair of metal oxide semiconductor films 76 and 78 are provided on the sensor body 70. For example, each of the pads 6 is a gold alloy pad, which has high adhesion to the substrate 4 and high connection strength with the leads 74. Also in this reference example, the sensor body 70 is positioned with respect to the lead frame 72, the leads 74 are welded to the electrode pads 6a to 6d at four locations, and unnecessary portions are melted and removed. After that, the lead 74 is welded to the pin 22, and the lead 74 is cut at the same time.

[Brief description of drawings]

FIG. 1 is a plan view of a main part of a gas sensor according to an embodiment.

FIG. 2 is a bottom view of a main part of the example gas sensor.

FIG. 3 is a bottom view of a main part of a gas sensor in which a through hole is deformed.

FIG. 4 is a cross-sectional view of a main part showing a connecting portion between a pad and a lead in the gas sensor of the embodiment.

FIG. 5 is a characteristic diagram showing pad alloying in the gas sensor of the example.

FIG. 6 is a side view of a main part of the gas sensor according to the embodiment.

FIG. 7 is a characteristic diagram showing a relationship between lead types and power consumption in the gas sensor of the example.

FIG. 8 is a characteristic diagram showing the relationship between the type of thick film electrode pad and the durability of the pad and the connection strength of the leads in the gas sensor of the example.

FIG. 9 is a cross-sectional view of essential parts showing a fusing part in the gas sensor of the embodiment.

FIG. 10 is a plan view of a fused portion of a lead in the gas sensor of the embodiment.

FIG. 11 is a diagram showing a lead fusing process in the example.

FIG. 12 is a diagram showing a process of connecting leads to the gas sensor in the example.

FIG. 13 is a diagram showing a gas sensor manufacturing process in a reference example.

[Explanation of symbols]

2,3 sensor body 4 Heat-resistant insulating substrate 6 electrode pads 5,7 Main surface 8 heater film 10 heater electrode 12 Metal oxide semiconductor film 14 electrodes 16 through holes 20 leads 22 pin 24 Lower 26 Upper layer 27 Protective film 28 Weld 30 Fusing part 32 base 40 welding electrode 50 frame 60 base 70 Sensor body 72 Lead frame 74 lead 76,78 Metal oxide semiconductor film

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-6-174674 (JP, A) JP-A-4-268447 (JP, A) JP-A-6-242043 (JP, A) JP-A-60- 253859 (JP, A) JP 64-18053 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G01N 27/12

Claims (5)

(57) [Claims] 1. A heat-resistant insulating substrate is provided with a metal oxide semiconductor film whose resistance value changes by gas, a heater film, and a plurality of thick film electrode pads, and the metal oxide semiconductor is provided on the plurality of thick film electrode pads. In a gas sensor in which a film is connected to the heater film and leads, the plurality of thick film electrode pads are Au-Pt, Au-Pd,
The lead made of any alloy of Au-Rh and
There Pt-W, Au-Pd- Mo, Pt-ZrO 2, Pt
-Pd, either lead or thick film electrode
The connection with the pad is covered with a thick film, and the thick film electrode pad
Four pads are provided on one main surface of the substrate, and the four vertices of the quadrangle
And one lead for each thick film electrode pad.
The thickness of the main connection and the size of each lead connected
Substantially parallel to the diagonal of the quadrangle passing through the membrane electrode pad
A gas sensor characterized by being arranged so that 2. The thick film electrode pads are Au—Pt.
The gas sensor according to claim 1, wherein the gas sensor is made of an alloy. 3. The gas sensor for detecting carbon monoxide, wherein the power consumption of the heater film is periodically changed to periodically change the temperature of the metal oxide semiconductor film. The gas sensor according to claim 1, wherein the gas sensor is a gas sensor. 4. The end of the lead on the thick film electrode pad is blown off.
The gas sensor according to any one of 1. 5. The resistance value of the heat-resistant insulating substrate is changed by gas.
Metal oxide semiconductor film, heater film, and multiple thick film electrodes
A pad and the thick metal electrode pads are provided with the metal
The oxide semiconductor film was connected to the heater film and the lead
In the method of manufacturing a gas sensor, an alloy of Au-Pt, Au-Pd, or Au-Rh is used.
Of forming thick film electrode pad consisting of
If, Pt-W in a frame, Au-Pd-Mo, Pt -ZrO 2, P
taut either or et al lead of t-Pd in a cross shape
Then, attach a lead to the thick film electrode pad,
Cover the connection between the membrane electrode pad and the lead with a thick film.
Gas sensor manufacturing method characterized in that
Law.