JP2002334857A - Method of grinding semiconductor wafer, and apparatus for ultraviolet irradiation used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of grinding a semiconductor wafer, capable of preventing the semiconductor wafer or end chips located in the outer periphery of the semiconductor wafer from peeling off and scattering in grinding of the backside surface of the semiconductor wafer, on the surface of which a protective tape is adhered. SOLUTION: This method of grinding a semiconductor wafer, on the surface of which a protective tape is adhered, contains a protective-tape adhering step in which a protective tape having an adhesive layer that is cured by ultraviolet irradiation is adhered over the whole area of the surface of the semiconductor wafer, an ultraviolet irradiating step in which the central area, excluding the outer peripheral region of the protective film that is adhered on the semiconductor wafer, is subjected to ultraviolet irradiation, and a grinding step in which the semiconductor wafer is held on a chucking table with the ultraviolet- irradiated protective tape facing down and the backside surface of the semiconductor wafer is ground.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for grinding a semiconductor wafer, and more particularly, to attaching a protective tape to the surface of a semiconductor wafer and holding the semiconductor wafer on the chuck table with the protective tape side down. The present invention also relates to a semiconductor wafer grinding method for grinding the back surface of the semiconductor wafer held on the chuck table, and an ultraviolet irradiation apparatus used for the grinding method.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, circuits such as ICs and LSIs are formed in a large number of regions arranged in a lattice on the surface of a semiconductor wafer having a substantially disk shape, and each of the circuits formed with the circuits is formed. Individual semiconductor elements are manufactured by dicing the region along predetermined streets (cutting lines). In order to improve the heat dissipation of the semiconductor element, it is desirable to form the semiconductor element as thin as possible. In addition, in order to reduce the size of a mobile phone, a smart card, a personal computer, and the like using a large number of semiconductor elements, it is desirable to form the semiconductor elements as thin as possible. Therefore, before dividing a semiconductor wafer into individual semiconductor elements, the back surface is ground to a predetermined thickness. Further, as a technique capable of processing the thickness of a semiconductor element divided into individual semiconductor chips to be thinner, a cutting groove having a predetermined depth is formed on the front surface of the semiconductor wafer before grinding the back surface of the semiconductor wafer. A processing method called so-called pre-dicing, in which the semiconductor wafer is divided into individual semiconductor elements by grinding the back surface thereof until a groove is exposed, has also been developed.

[0003]

In the above grinding,
A protective tape made of an adhesive tape is adhered to the surface of the semiconductor wafer to protect the circuit surface, and the semiconductor wafer is held on a chuck table of a grinding device with the protective tape side down. However, when the surface of the semiconductor wafer has bumps (solder balls) or other irregularities of 10 μm or more, there is a problem that dimples (dents) are generated on the ground surface by the grinding or the semiconductor wafer itself is broken. In order to solve such a problem, when the surface of the semiconductor wafer has irregularities of 10 μm or more, a protective tape having an adhesive layer that is cured by irradiating ultraviolet rays is used, and the adhesive layer covers the irregularities. In such a state, a protective tape is irradiated with ultraviolet rays to be hardened, and a grinding method is performed in which grinding is performed without the influence of unevenness. However, in this grinding method, the adhesive layer of the protective tape is hardened by irradiation with ultraviolet light, so that the adhesive strength is reduced, and the semiconductor wafer is easily peeled off from the protective tape, and the semiconductor wafer may be scattered during grinding. Problem has occurred.

In the above-mentioned processing method called so-called dicing, a cutting groove having a predetermined depth is formed in advance along a street (cutting line) formed on the surface of a semiconductor wafer, and ultraviolet rays are formed on the surface. Paste a protective tape having an adhesive layer that cures by irradiating
The protective tape is irradiated with ultraviolet rays in a state where the above-mentioned irregularities are wrapped around the adhesive layer, and then cured to perform grinding. However, even in this so-called pre-dicing method, the adhesive layer of the protective tape is hardened by irradiation with ultraviolet light, so that the adhesive force is reduced. There is a new problem that the semiconductor element may be taken into the inside and caught between the grinding wheel and damage the semiconductor element.

The present invention has been made in view of the above-mentioned facts, and its main technical problem is to grind a semiconductor wafer or a semiconductor wafer from the protective tape when grinding the back surface of the semiconductor wafer having the protective tape adhered to the surface. It is an object of the present invention to provide a method for grinding a semiconductor wafer and an ultraviolet irradiation apparatus used in the grinding method, which can prevent the end material chips present on the outer peripheral portion from peeling and scattering.

[0006]

According to the present invention, a protective tape is adhered to a surface of a semiconductor wafer, and the semiconductor wafer is placed with the protective tape side down. A method for grinding a semiconductor wafer, wherein the semiconductor wafer is held on a table and the backside of the semiconductor wafer held on the chuck table. A protective tape attaching step of attaching to the entire surface, an ultraviolet irradiation step of irradiating ultraviolet rays to a central area of the protective tape while leaving an outer peripheral area of the protective tape attached to the semiconductor wafer, Holding the UV-irradiated protective tape side down on the chuck table and grinding the surface of the semiconductor wafer. Grinding a semiconductor wafer, wherein is provided.

According to the present invention, there is also provided an ultraviolet irradiation apparatus for irradiating a protective tape having an adhesive layer which is cured by irradiating ultraviolet light stuck to the surface of a semiconductor wafer with ultraviolet light, wherein the lamp housing has an upper opening, ,
An ultraviolet irradiation lamp disposed in the lamp housing, and a light shielding plate that covers the opening of the lamp housing and supports the semiconductor wafer on the upper surface with the protective tape side down; An ultraviolet irradiation device is provided, which has a similar opening slightly smaller than the outer diameter of the semiconductor wafer.

It is preferable that the light-shielding plate has an alignment member on its upper surface for engaging with a notch indicating the crystal orientation of the semiconductor wafer.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a method for grinding a semiconductor wafer according to the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a grinding apparatus 1 for carrying out a semiconductor wafer grinding method according to the present invention. The grinding device 1 in the illustrated embodiment includes a device housing 2 having a substantially rectangular parallelepiped shape. A stationary support plate 4 is provided upright at the upper right end of the device housing 2 in FIG. On the inner surface of the stationary support plate 4, two pairs of guide rails 6, 6, and 8, 8 extending vertically are provided. A rough grinding unit 10 as a rough grinding means is mounted on one of the guide rails 6 and 6 so as to be movable in the vertical direction, and a finish grinding unit 12 as a finish grinding means is mounted on the other guide rails 8 and 8 in the vertical direction. It is mounted so that it can move in the direction.

The rough grinding unit 10 includes a unit housing 101, a grinding wheel 102 rotatably mounted on a lower end of the unit housing 101, and a grinding wheel 102 mounted on an upper end of the unit housing 101 in a direction indicated by an arrow. Rotation drive mechanism 103 to be rotated
And the moving base 10 on which the unit housing 101 is mounted.
4 is provided. Guide rails 105, 105 are provided on the moving base 104.
The rough grinding unit 10 is vertically movably supported by movably fitting the guide rails 05 and 105 to the guide rails 6 provided on the stationary support plate 4. The rough grinding unit 10 in the form shown in FIG.
Is moved along the guide rails 6, 6, and the grinding wheel 10 is moved.
2 is provided with a feed mechanism 11 for adjusting the cutting depth. The feed mechanism 11 includes a male screw rod 111 that is disposed on the stationary support plate 4 in parallel with the guide rails 6 and 6 in a vertical direction and rotatably supported, and a pulse motor 112 that drives the male screw rod 111 to rotate. , The moving base 1
04 is provided with a female screw block (not shown) which is attached to the male screw rod 111 and is screwed with the male screw rod 111.
By driving the male screw rod 111 forward and reverse, the rough grinding unit 10 is moved in the vertical direction.

The finish grinding unit 12 has the same construction as the rough grinding unit 10, and includes a unit housing 121, a grinding wheel 122 rotatably mounted on a lower end of the unit housing 121, and an upper end of the unit housing 121. Drive mechanism 123 which is mounted on the shaft and rotates the grinding wheel 122 in the direction shown by the arrow.
And the moving base 12 on which the unit housing 121 is mounted.
4 is provided. Guide rails 125, 125 are provided on the moving base 124.
The finish grinding unit 12 is supported movably in the vertical direction by movably fitting the guide rails 25, 125 to the guide rails 8, 8 provided on the stationary support plate 4. The finish grinding unit 12 in the illustrated form includes a feed mechanism 13 that moves the moving base 124 along the guide rails 8 and 8 to adjust the cutting depth of the grinding wheel 123. The feed mechanism 13 has substantially the same configuration as the feed means 11. That is, the feed mechanism 13 includes a male screw rod 131 disposed on the stationary support plate 4 in parallel with the guide rails 6 and 6 in a vertical direction and rotatably supported, and a pulse motor for rotationally driving the male screw rod 131. 132, and a female screw block (not shown) mounted on the moving base 124 and screwed to the male screw rod 131.
Is driven forward and reverse to move the finish grinding unit 12 in the vertical direction.

The grinding device 1 in the illustrated embodiment has a turntable 15 disposed on the front side of the stationary support plate 4 so as to be substantially flush with the upper surface of the device housing 2. The turntable 15 is formed in a disk shape having a relatively large diameter, and is appropriately rotated in a direction indicated by an arrow 15a by a rotation driving mechanism (not shown).
The turntable 15 has three chuck tables 2 each having a phase angle of 120 degrees in the illustrated embodiment.
0 is rotatably arranged in a horizontal plane. The chuck table 20 has a disk-shaped base 21 having a circular concave part whose upper part is opened, and a suction holding chuck formed by a porous ceramic disk fitted into the concave part formed in the base 21. 22, and is configured to be rotated in a direction indicated by an arrow by a rotation drive mechanism (not shown). The chuck table 20 is connected to a suction unit (not shown). The three chuck tables 20 arranged on the turntable 15 configured as described above include a workpiece loading / unloading area A, a rough grinding processing area B,
The workpieces are sequentially moved to a finishing grinding zone C and a workpiece loading / unloading zone A.

The work to be carried in and out of the grinding device 1 shown in FIG.
On one side of the carry-out area A, a pre-grinding wafer cassette 31 for stocking a semiconductor wafer, which is a workpiece before grinding, is provided. The pre-grinding wafer cassette 31 accommodates a semiconductor wafer W having a tape T affixed to its surface. Here, the protective tape T to be attached to the semiconductor wafer W will be described. As shown in FIG. 2, the protective tape T is formed by cutting a tape having an adhesive layer that is cured by irradiating ultraviolet rays into the same shape as the semiconductor wafer W. In addition, a tape having an adhesive layer that is cured by irradiating ultraviolet rays is, for example, E-8260 / 103C150 manufactured by Lintec Corporation
Can be used. This protective tape T is attached to the entire surface of the semiconductor wafer W on which the circuit is formed, on the surface on which the adhesive layer is formed. In this manner, the semiconductor wafer W having the protective tape T adhered to the surface is stored in the pre-grinding wafer cassette 31. An ultraviolet irradiation device 32 is provided between the pre-grinding wafer cassette 31 and the workpiece loading / unloading area A. The ultraviolet irradiation device 32 will be described later in detail.

Continuing the description with reference to FIG. 1, the grinding apparatus 1 has a spinner table 330 for cleaning the semiconductor wafer after grinding on the other side with respect to the workpiece loading / unloading area A. Means 33 are provided. On the other side of the workpiece loading / unloading area A in the grinding apparatus 1, a post-grinding wafer cassette 34 for stocking the semiconductor wafer W as the workpiece after the grinding process, which has been cleaned by the cleaning means 33. Are arranged. Further, the grinding device 1 in the illustrated embodiment unloads the semiconductor wafer W, which is a workpiece stored in the pre-grinding wafer cassette 31, onto the light shielding plate 323 of the ultraviolet irradiation device 32 and uses the cleaning means 33. Workpiece transfer means 35 is provided for transferring the cleaned semiconductor wafer W to the wafer cassette 34 after grinding. The grinding device in the illustrated embodiment is the same as the ultraviolet irradiation device 3.
The semiconductor wafer W placed on the second light-shielding plate 323 and having the protection tape T irradiated with ultraviolet rays as described later is positioned in the workpiece loading / unloading area A.
Workpiece loading means 36 for transporting the workpiece upward,
A work carrying-out means 37 is provided for transferring the ground semiconductor wafer W placed on the chuck table 20 positioned in the carry-out area A to the cleaning means 33.

Next, with respect to the ultraviolet irradiation device 32,
This will be described with reference to FIGS. UV irradiation device 3
2 is a lamp housing 3 having a substantially rectangular parallelepiped shape with an upper opening.
21; a plurality of ultraviolet irradiation lamps 322 disposed in the lamp housing 321;
And a light-shielding plate 323 that covers one opening. The light shielding plate 323 is made of a rectangular plate material, and has a similar opening 324 slightly smaller than the outer diameter of the semiconductor wafer W at the center thereof. That is, the opening 324 includes a circular portion 325 and a linear portion 326 corresponding to the orientation flat W1 which is a cutout indicating the crystal orientation of the semiconductor wafer W. In addition, the opening 324 is formed in a similar shape in which the outer periphery is located about 0.5 to 5.0 mm inside the outer periphery of the semiconductor wafer W. On the upper surface of the light-shielding plate 323, a positioning member 327 that is engaged with the orientation flat W1 indicating the crystal orientation of the semiconductor wafer W is provided to protrude. The engaging surface of the positioning member 327 facing the opening 324 is located approximately 0.5 to 5.0 mm outside the outer circumference of the opening 324 corresponding to the orientation flat W1 and is formed in a planar shape. In addition, an opening 324 is provided on the upper surface of the light shielding plate 323.
The two positioning members 328, 328 located outside the outer periphery of the circular portion 325 protrude therefrom. The ultraviolet irradiation device 32 configured as described above includes a light shielding plate 323.
A semiconductor wafer W is placed and supported on the upper surface of the semiconductor wafer W with the protective tape T side down. At this time, the semiconductor wafer W is moved to the positioning part 327 and the two positioning members 328,
28, the semiconductor wafer W
Is mounted on the light shielding plate 323 outside the opening 324 with a width of 0.5 to 5.0 mm.

Next, another embodiment of the light shielding plate constituting the ultraviolet irradiation device 32 will be described with reference to FIG. The light-shielding plate 323a in the embodiment shown in FIG. 5 is applied when the notch W2 indicating the crystal orientation of the semiconductor wafer W is a notch W2. Similarly to the light shielding plate 323, the light shielding plate 323a is made of a rectangular plate, and has a similar opening 324a slightly smaller than the outer diameter of the semiconductor wafer W at the center thereof. That is, the opening 324a includes a circular portion 325a and a triangular protrusion 326a corresponding to the notch W2 indicating the crystal orientation of the semiconductor wafer W. In addition, the opening 324a is formed in a similar shape with its outer periphery positioned about 0.5 to 5.0 mm inside the outer periphery of the semiconductor wafer W. On the upper surface of the triangular protrusion 326a of the light-shielding plate 323a, a triangular positioning member 327a that is engaged with a notch W2 indicating the crystal orientation of the semiconductor wafer W is provided to protrude. The triangular positioning member 327a is provided at a position about 0.5 to 5.0 mm outside the periphery of the triangular protrusion 326a. Further, two positioning members 328a, 328a located outside the outer periphery of the circular portion 325a of the opening 324a protrude from the upper surface of the light shielding plate 323a. The ultraviolet irradiation device 32 configured as described above mounts and supports the semiconductor wafer W on the upper surface of the light shielding plate 323a with the protective tape T side down. At this time,
By positioning the semiconductor wafer W along the positioning member 327a and the two positioning members 328a and 328a and engaging the notch W2 with the positioning member 327a, the outer peripheral area of the semiconductor wafer W is reduced to 0.5%.
It is placed outside the opening 324a in the light shielding plate 323a with a width of up to 5.0 mm.

Next, still another embodiment of the light shielding plate constituting the ultraviolet irradiation device 32 will be described with reference to FIGS. In the light shielding plate 323b shown in FIGS. 6 and 7, the same parts as those in the light shielding plate 323a shown in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the light shielding plate 323b in the embodiment shown in FIGS. 6 and 7, the notch indicating the crystal orientation of the semiconductor wafer W is applicable to both the orientation flat W1 and the notch W2. That is, the light-shielding plate 323b is applied to a case where the notch indicating the crystal orientation of the semiconductor wafer W shown in FIG. 5 is the notch W2, and the notch indicating the crystal orientation of the semiconductor wafer W is the orientation flat W1. A switching plate 40 for switching so as to apply the present invention is mounted. The switching plate 40 is foldably mounted on one edge of the light shielding plate 323a on the side where the triangular positioning member 327a is provided by hinges 41,41. The switching plate 40 is provided with the triangular positioning member 327a in a folded state as shown in FIG.
Are formed in a triangular relief hole 401.
Note that the relief hole 401 is not limited to a triangular shape, and may be any size as long as the positioning member 327a can be fitted. Further, the switching plate 40 includes a light shielding plate 323a.
As shown in FIG. 7, a positioning member 42 that is engaged with the orientation flat W1 indicating the crystal orientation of the semiconductor wafer W in a folded state as shown in FIG. The alignment member 42 is provided with an engagement surface 4 that engages with the orientation flat W1.
Reference numeral 21 is positioned at a position slightly protruding from the other edge of the switching plate 40. When the notch W2 indicating the crystal orientation of the semiconductor wafer W is the notch W2, the light shielding plate 323b configured as described above is used with the switching plate 40 opened as shown in FIG. When the notch indicating the crystal orientation is the orientation flat W1, the switching plate 40 is used in a folded state as shown in FIG.

The grinding apparatus 1 in the illustrated embodiment is configured as described above, and the working procedure of the grinding will be described below with reference to FIGS. First, as described above, a protective tape T having an adhesive layer that is cured by irradiating ultraviolet rays is attached to the entire surface of the surface of the semiconductor wafer W on which circuits are formed (protective tape attaching step). The semiconductor wafer W having the protective tape T adhered to the surface thereof is stored in the pre-grinding wafer cassette 31. The semiconductor wafer W with the protective tape T adhered to the surface of the workpiece before grinding housed in the pre-grinding wafer cassette 31 is transported by the vertical movement and the forward / backward movement of the workpiece transport means 36, As described above, the protective tape T is placed on the light shielding plate 323 of the ultraviolet irradiation device 32 with the protective tape T side down. At this time, the semiconductor wafer W is moved to the positioning member 325 and the two positioning members 3.
By positioning along the semiconductor wafers 26 and 326, the semiconductor wafer W is placed outside the opening 324 in the light-shielding plate 323 with the outer peripheral portion having a width of 0.5 to 5.0 mm. Thus, the light shielding plate 3 of the ultraviolet irradiation device 32
When the semiconductor wafer W is placed on the 23 with the protective tape T side down, the ultraviolet irradiation lamp 322 is turned on.
When the ultraviolet irradiation lamp 322 is turned on, the protection tape T adhered to the semiconductor wafer W is irradiated with ultraviolet rays while leaving the outer peripheral region placed on the light shielding plate 323 (ultraviolet irradiation step). As a result, the protective tape T is cured in such a manner that the adhesive layer in the central region other than the outer peripheral region wraps the unevenness existing on the surface of the semiconductor wafer W, but the adhesive layer in the outer peripheral region maintains the adhesive strength. Have been.

When the central region of the protective tape T adhered to the surface of the semiconductor wafer W as described above is irradiated with ultraviolet rays, the semiconductor wafer W is rotated by the workpiece loading means 36 to carry in and out the workpiece. It is placed on the chuck table 20 positioned in the carry-out area A. When the semiconductor wafer W before grinding is mounted on the chuck table 20, the semiconductor wafer W before grinding can be suction-held on the suction holding chuck 22 by operating a suction unit (not shown). Then, the turntable 15 is rotated 120 degrees by a rotation drive mechanism (not shown) in the direction indicated by the arrow 15a, and the chuck table 20 on which the semiconductor wafer W before grinding is mounted is positioned in the rough grinding area B.

When the chuck table 20 on which the semiconductor wafer W before grinding is mounted is positioned in the rough grinding area B, the chuck table 20 is rotated in a direction indicated by an arrow by a rotary drive mechanism (not shown). By lowering the wafer 102 by a predetermined amount by the feed mechanism 11 while being rotated in the direction indicated by the arrow, rough grinding is performed on the semiconductor wafer W before grinding on the chuck table 20 (grinding step). During this time, the central region of the protective tape T attached to the surface of the semiconductor wafer W is irradiated with ultraviolet light on the next chuck table 20 positioned in the workpiece loading / unloading area A as described above. The semiconductor wafer W before grinding is mounted. Next, the turntable 15 is rotated 120 degrees in the direction indicated by the arrow 15a, and the chuck table 20 on which the semiconductor wafer W subjected to the rough grinding is placed is positioned in the finish grinding area C.
At this time, in the workpiece loading / unloading area A, the next chuck table 20 on which the semiconductor wafer W before grinding is mounted is positioned in the rough grinding processing area B, and the next next chuck table 20 is placed in the workpiece grinding area B. It is positioned in the loading / unloading area A.

In this manner, the rough grinding unit 10 performs rough grinding on the semiconductor wafer W before rough grinding mounted on the chuck table 20 positioned in the rough grinding area B, and finish grinding is performed. The semiconductor wafer W placed on the chuck table 20 positioned in the processing area C and subjected to rough grinding is subjected to finish grinding by the finish grinding unit 12 (grinding step). The semiconductor wafer W to be ground in the rough grinding and the finish grinding described above is in a state where the adhesive layer in the central region of the protective tape T stuck on the surface wraps the unevenness existing on the surface of the semiconductor wafer W. Since it is hardened, it is ground without the influence of irregularities. In addition, the protective tape T
The adhesive layer in the outer peripheral area of the semiconductor wafer is not cured, and the adhesive force is maintained, so that the semiconductor wafer and the scrap chips present on the outer peripheral part of the semiconductor wafer are peeled and scattered from the protective tape during grinding of the semiconductor wafer. Can be prevented.

As described above, when the finish grinding is performed on the semiconductor wafer W by the finish grinding unit 12, the turntable 15 is rotated by 120 degrees in the direction shown by the arrow 15a, and the ground after the finish grinding is performed. The chuck table 20 on which the semiconductor wafer W is placed is positioned in the workpiece loading / unloading area A. The chuck table 20 on which the semiconductor wafer W subjected to the rough grinding in the rough grinding area B is placed is placed in the finish grinding area C, and the semiconductor wafer W before grinding is loaded in the workpiece loading / unloading area A.
Are moved to the rough grinding area B, respectively.

The chuck table 20 which has returned to the workpiece loading / unloading area A via the rough grinding area B and the finish grinding area C holds and holds the semiconductor wafer W finished and ground here. To release. Then, the chuck table 20 positioned in the workpiece loading / unloading area A
The semiconductor wafer W that has been subjected to the finish grinding is transported to the cleaning unit 33 by the workpiece carrying-out unit 37. The semiconductor wafer W transported to the cleaning means 33 is cleaned here, and then stored in a predetermined position of the wafer cassette 34 after grinding by the workpiece transport means 35.

Although the present invention has been described based on the illustrated embodiment, the present invention is not limited to the embodiment. For example, in the embodiment, the example in which the ultraviolet irradiation device 32 is provided in the grinding device 1 is shown. However, the ultraviolet irradiation device 32 is provided independently without being incorporated in the grinding device 1, and the semiconductor wafer W is used for the wafer before grinding. Cassette 31
Before being accommodated in the semiconductor wafer W, the central region may be irradiated with ultraviolet rays while leaving the outer peripheral region of the protective tape T adhered to the semiconductor wafer W.

[0026]

The semiconductor wafer grinding method and the ultraviolet irradiation apparatus used in the grinding method according to the present invention are constructed as described above, and have the following effects.

That is, according to the present invention, since the adhesive layer in the central region of the protective tape attached to the surface of the semiconductor wafer is cured so as to cover the unevenness existing on the surface of the semiconductor wafer, The back surface of the semiconductor wafer can be ground without the influence of unevenness. In addition, since the adhesive layer in the outer peripheral region of the protective tape is not cured and the adhesive force is maintained, the semiconductor wafer and the remnant chips existing on the outer peripheral portion of the semiconductor wafer are peeled off from the protective tape during grinding of the semiconductor wafer. Can be prevented from scattering.

[Brief description of the drawings]

FIG. 1 is a perspective view of a grinding apparatus for carrying out a method for grinding a semiconductor wafer according to the present invention.

FIG. 2 is a perspective view showing a semiconductor wafer to be ground by the grinding method according to the present invention and a protective tape to be adhered to the surface of the semiconductor wafer.

FIG. 3 is an exploded perspective view of the ultraviolet irradiation device according to the present invention.

FIG. 4 is a perspective view of an embodiment of an ultraviolet irradiation device according to the present invention and a semiconductor wafer to which a protective tape irradiated with ultraviolet light by the ultraviolet irradiation device is adhered.

FIG. 5 is a perspective view of another embodiment of the ultraviolet irradiation device according to the present invention and a semiconductor wafer to which a protective tape irradiated with ultraviolet light by the ultraviolet irradiation device is adhered.

FIG. 6 is a perspective view of still another embodiment of the ultraviolet irradiation device according to the present invention and a semiconductor wafer to which a protective tape irradiated with ultraviolet light by the ultraviolet irradiation device is adhered.

FIG. 7 is a perspective view showing another usage of the ultraviolet irradiation device shown in FIG. 6;

[Explanation of symbols]

 1: Grinding device 2: Device housing 4: Stationary support plate 4 6: Guide rail 8: Guide rail 10: Rough grinding unit 101: Unit housing 102: Grinding wheel 103: Rotary drive mechanism 104: Moving base 105: Guided rail 11: Feed mechanism 111: Male screw rod 112: Pulse motor 12: Finish grinding unit 121: Unit housing 122: Grinding wheel 123: Rotation drive mechanism 124: Moving base 125: Guided rail 13: Feed mechanism 131: Male screw rod 132: Pulse motor 15: Turntable 20: Chuck table 21: Chuck table base 22: Suction holding chuck for chuck table 31: Wafer cassette before grinding 32: UV irradiation device 321: Lamp housing 322: UV irradiation lamp 323: Shield plate 324, 324a: Opening 327, 327a: Positioning member 328, 328a: Positioning member 33: Cleaning means 330: Spinner table 34: Wafer cassette 35 after grinding 35: Workpiece conveying means 76: Workpiece carrying means 37 : Workpiece unloading means 40: Switching plate 41: Hinge 42: Positioning member

Claims (3)

[Claims] 1. A protective tape is attached to a front surface of a semiconductor wafer, and the semiconductor wafer is held on the chuck table with the protective tape side down, and a back surface of the semiconductor wafer held on the chuck table. A method of grinding a semiconductor wafer, comprising: bonding a protective tape having an adhesive layer that is cured by irradiating ultraviolet rays onto a whole surface of the semiconductor wafer; and bonding the protective tape to the semiconductor wafer. An ultraviolet irradiation step of irradiating the central region of the protective tape with ultraviolet rays while leaving the outer peripheral region of the protective tape, and holding the semiconductor wafer on the chuck table with the ultraviolet-irradiated protective tape side down. And a grinding step of grinding the surface of the semiconductor wafer. 2. An ultraviolet irradiation apparatus for irradiating a protective tape having an adhesive layer, which is cured by irradiating ultraviolet light attached to a surface of a semiconductor wafer, with ultraviolet light, comprising: a lamp housing having an open upper part; An ultraviolet irradiation lamp provided, and a light-shielding plate that covers the opening of the lamp housing and supports the semiconductor wafer on the upper surface with the protective tape side down, the light-shielding plate having an outer diameter of the semiconductor wafer. An ultraviolet irradiation device comprising a slightly smaller similar-shaped opening. 3. The light-shielding plate according to claim 2, wherein the light-shielding plate has an alignment member on an upper surface thereof for engaging with a notch indicating a crystal orientation of the semiconductor wafer.