JP2002328475A - Chemical amplification type positive resist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chemical amplification type positive resist composition containing a resin component and an acid generator, suitable for lithography using an excimer laser such as ArF or KrF, excellent in performance balance of resolution and sensitivity and ensuring a small reduction in size in SEM observation. SOLUTION: The chemical amplification type positive resist composition contains an alkali-insoluble resin having a polymerization unit derived from a monomer of formula (I) (where R1 and R2 are each H or methyl) and made alkali-soluble by the action of an acid and an acid generator.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a chemically amplified positive resist composition used for fine processing of semiconductors.

[0002]

2. Description of the Related Art A lithography process using a resist composition is usually employed for microfabrication of semiconductors.
gh), the shorter the exposure wavelength, the higher the resolution in principle. Exposure light sources for lithography used for manufacturing semiconductors include g-line having a wavelength of 436 nm, i-line having a wavelength of 365 nm,
8 nm KrF excimer laser, and the wavelength is getting shorter every year.
ArF excimer laser is promising.

Since the life of a lens used in an ArF excimer laser exposure machine is shorter than that of a lens for a conventional exposure light source, it is desirable that exposure time to an ArF excimer laser beam be as short as possible. For this purpose, since it is necessary to increase the sensitivity of the resist, a so-called chemically amplified resist containing a resin having a group that is cleaved by the acid utilizing the catalytic action of an acid generated by exposure is used.

The resin used for the resist for ArF excimer laser exposure does not have an aromatic ring in order to secure the transmittance of the resist, and has an alicyclic ring instead of the aromatic ring in order to have dry etching resistance. Things are known to be good. Until now, such a resin
DC Hofer, Journal of Photopolymer Science andTec
Various resins are known as described in hnology, Vol. 9, No. 3, 387-398 (1996). In addition, as a resin for a resist for ArF excimer laser exposure, a mutual copolymer comprising polymerized units of an alicyclic olefin and polymerized units of an unsaturated dicarboxylic anhydride (TI Wallow et al., Proc. SP
IE, Vol. 2724, pp. 355-364 (1996)) and the use of a polymer having an alicyclic lactone structural unit (JP-A-2000-26446). However, conventionally known resins for ArF excimer laser exposure use SEM.
When measuring the dimension of the resist by using a (scanning electron microscope), there was a problem that the volume shrinkage was caused by the damage of the SEM electron beam irradiation, and the dimension shrinkage was large. Therefore, the accuracy of resist dimension measurement is poor, and it has been difficult to produce a device having stable performance.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to provide a chemically amplified positive resist composition containing a resin component and an acid generator, which is suitable for excimer laser lithography such as ArF or KrF. Another object of the present invention is to provide a composition which is excellent in sensitivity performance balance and has small dimensional shrinkage during SEM observation.

[0006]

Means for Solving the Problems The present inventors, as a part of the polymerized unit in the resin constituting the chemically amplified positive resist composition, use a polymerized unit obtained from an unsaturated monomer having a specific structure as a raw material. It has been found that the use of a resin containing the resin composition provides a resist composition having an excellent balance of performance such as resolution, profile, sensitivity, and adhesiveness, and having a small dimensional shrinkage during SEM observation.

That is, the present invention provides a resin having a polymerized unit derived from an unsaturated monomer represented by the following formula (I), which itself is insoluble in alkali but becomes alkali-soluble by the action of an acid: And a chemical amplification type positive resist composition characterized by containing an acid generator. (In the formula, R ₁ and R ₂ independently represent hydrogen or a methyl group.)

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION The resist composition of the present invention is characterized in that it contains, as a resin component, a resin containing a polymerized unit starting from the monomer of the above formula (I). Here, specific examples of the monomer represented by the formula (I) include the following compounds.

[0009]

The resin of the present invention is insoluble in alkali, but becomes alkali-soluble by the action of an acid, and is used in a positive resist composition. The resin preferably has a group that is cleaved by the action of an acid. Here, as the group which is cleaved by the action of an acid, specifically, various esters of carboxylic acid, for example, alkyl esters having about 1 to 6 carbon atoms represented by tert-butyl ester, methoxymethyl ester, ethoxymethyl ester , 1-
Ethoxyethyl ester, 1-isobutoxyethyl ester, 1-isopropoxyethyl ester, 1-ethoxypropyl ester, 1- (2-methoxyethoxy) ethyl ester, 1- (2-acetoxyethoxy) ethyl ester, 1- [2 Acetal type esters such as-(1-adamantyloxy) ethoxy] ethyl ester, 1- [2- (1-adamantanecarbonyloxy) ethoxy] ethyl ester, tetrahydro-2-furyl ester and tetrahydro-2-pyranyl ester; -Alkyl-2-adamantyl, 1- (1-adamantyl)
Alicyclic esters such as -1-alkylalkyl and isobornyl esters; The monomer for leading to such a carboxylic acid ester-containing polymerization unit may be an acrylic monomer such as a methacrylic acid ester or an acrylic acid ester, or a norbornene carboxylic acid ester, a tricyclodecene carboxylic acid ester, or a tetracyclodecene. Like carboxylate esters, carboxylate groups may be attached to alicyclic monomers, and furthermore, Iwasa et al, Journal of Photopolymer
Science and Technology, Vol.9, No.3, pp.447-456
(1996), the alicyclic group of the alicyclic carboxylic acid ester may form an ester with acrylic acid or methacrylic acid.

Among such monomers, as a group which is cleaved by the action of an acid, for example, a bulk containing an alicyclic group such as 2-alkyl-2-adamantyl and 1- (1-adamantyl) -1-alkylalkyl. It is preferable to use a compound having a high group because the resolution is excellent. Examples of such a monomer containing a bulky group include 2-alkyl-2-adamantyl (meth) acrylate and 1- (meth) acrylate.
(1-adamantyl) -1-alkylalkyl, 2-alkyl-2-adamantyl 5-norbornene-2-carboxylate, 5-norbornene-2-carboxylic acid 1- (1-
Adamantyl) -1-alkylalkyl and the like. In particular, when 2-alkyl-2-adamantyl (meth) acrylate is used as a monomer, the resolution is excellent, which is preferable. Such (meth) acrylic acid 2-
Representative examples of alkyl-2-adamantyl include 2-methyl-2-adamantyl acrylate, 2-methyl-2-adamantyl methacrylate, 2-ethyl-2-adamantyl acrylate, 2-ethyl 2-adamantyl methacrylate And 2-n-butyl-2-adamantyl acrylate. Among these, particularly when 2-ethyl-2-adamantyl (meth) acrylate is used,
This is preferable because the balance between sensitivity and heat resistance is good. Of course, if necessary, another monomer having a group that is cleaved by the action of an acid may be used in combination.

The resin in the present invention may further have a polymerized unit derived from a monomer having no group which is cleaved by the action of an acid. Examples of such a monomer include (meth) acrylate, alicyclic olefin, unsaturated dicarboxylic anhydride, and (meth) acrylonitrile. Specifically, for example, the following compounds can be mentioned.

3-hydroxy-1-adamantyl acrylate, 3-hydroxy-1-adamantyl methacrylate, 3,5-dihydroxy-1-adamantyl acrylate, 3,5-dihydroxy-1-adamantyl methacrylate α-acryloyloxy -Γ-butyrolactone, α
-Methacryloyloxy-γ-butyrolactone, β-acryloyloxy-γ-butyrolactone, β-methacryloyloxy-γ-butyrolactone, 5-acryloyloxy-2, 6-norbornane carboractone 5-methacryloyloxy-2, 6-norbornane carboractone ,

2-norbornene, 2-hydroxy-5
Norbornene, 5-norbornene-2-carboxylic acid, 5
Methyl-norbornene-2-carboxylate, t-butyl 5-norbornene-2-carboxylate, 1-cyclohexyl-1-methylethyl 5-norbornene-2-carboxylate, 1- (5-norbornene-2-carboxylate) 4-methylcyclohexyl) -1-methylethyl, 5-norbornene-2-carboxylate 1- (4-hydroxycyclohexyl) -1-methylethyl, 5-norbornene-2-carboxylate 1-methyl-1- (4- Oxocyclohexyl) ethyl, 5-norbornene-2-carboxylic acid 1-
(1-adamantyl) -1-methylethyl, 1-methylcyclohexyl 5-norbornene-2-carboxylate, 5
-2-methyl-2-adamantyl norbornene-2-carboxylate, 2-ethyl-2-adamantyl 5-norbornene-2-carboxylate 2-hydroxy-1-ethyl 5-norbornene-2-carboxylate, 5-norbornene- 2
-Methanol, 5-norbornene-2,3-dicarboxylic anhydride and the like.

Maleic anhydride Itaconic anhydride

The resin used in the present invention varies depending on the type of radiation for patterning exposure and the type of other polymerized units arbitrarily contained. It is preferable to use a monomer having a group that can be cleaved by an acid in the range of 10 to 80 mol%, and copolymerize another monomer if necessary.

This copolymerization can be carried out according to a conventional method. For example, each required monomer is dissolved in an organic solvent,
2,2'-azobisisobutyronitrile and dimethyl
By conducting the polymerization reaction in the presence of a polymerization initiator such as an azo compound such as 2,2'-azobis (2-methylpropionate), the copolymer resin specified in the present invention can be obtained. After completion of the reaction, it is advantageous to purify by a method such as reprecipitation.

The acid generator, which is another component of the resist composition, is obtained by applying radiation such as light or an electron beam to the substance itself or a resist composition containing the substance. Decomposes to generate an acid. The acid generated from the acid generator acts on the resin to cleave the group that is cleaved by the action of the acid present in the resin. Such acid generators include, for example, onium salt compounds, organic halogen compounds, sulfone compounds, sulfonate compounds and the like. Specifically, the following compounds can be mentioned.

Diphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium hexafluoroantimonate, 4-methoxyphenylphenyliodonium trifluoromethanesulfonate, bis (4-tert-butylphenyl) iodonium tetrafluoroborate, bis (4-tert-
Butylphenyl) iodonium hexafluorophosphate, bis (4-tert-butylphenyl) iodonium hexafluoroantimonate, bis (4-tert-
Butylphenyl) iodonium trifluoromethanesulfonate,

Triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium trifluoromethanesulfonate, 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, p-tolyldiphenyl Sulfonium trifluoromethanesulfonate, p-
Tolyldiphenylsulfonium perfluorobutanesulfonate, p-tolyldiphenylsulfonium perfluorooctanesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-tert-butylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-
Phenylthiophenyldiphenylsulfonium hexafluorophosphate, 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate,
1- (2-naphthoylmethyl) thiolanium hexafluoroantimonate, 1- (2-naphthoylmethyl)
Thiolanium trifluoromethanesulfonate, 4-
Hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate, 4-hydroxy-1-naphthyldimethylsulfonium trifluoromethanesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorobutane Sulfonate,
Cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorooctanesulfonate,

2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2,4,6-tris (trichloromethyl) -1,3,5-triazine, 2-
Phenyl-4,6-bis (trichloromethyl) -1,3,
5-triazine, 2- (4-chlorophenyl) -4,6
-Bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4
-Methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (benzo [d] [1,3] dioxolan-5-yl) -4,6-
Bis (trichloromethyl) -1,3,5-triazine,
2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (3
4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (3
4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5 -Triazine, 2- (2-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,
5-triazine, 2- (4-butoxystyryl) -4,
6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-pentyloxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,

Diphenyl disulfone, di-p-tolyl disulfone, bis (phenylsulfonyl) diazomethane, bis (4-chlorophenylsulfonyl) diazomethane, bis (p-tolylsulfonyl) diazomethane, bis (4-tert-butylphenylsulfonyl) diazomethane, Bis (2,4-xylylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane,
(Benzoyl) (phenylsulfonyl) diazomethane,

1-benzoyl-1-phenylmethyl p
-Toluenesulfonate (commonly called benzoin tosylate), 2-benzoyl-2-hydroxy-2-phenylethyl p-toluenesulfonate (commonly called α-methylol benzoin tosylate), 1,2,3-benzenetriyl trismethanesulfonate, , 6-Dinitrobenzyl p-toluenesulfonate, 2-nitrobenzyl p-toluenesulfonate, 4-nitrobenzyl
p-toluenesulfonate,

N- (phenylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) phthalimide, N- (trifluoromethylsulfonyloxy) -5-norbornene-2, 3-dicarboximide, N- (trifluoromethylsulfonyloxy) naphthalimide, N- (10-camphorsulfonyloxy) naphthalimide and the like.

In the positive resist composition of the present invention, a basic compound, especially a basic nitrogen-containing organic compound,
For example, by adding an amine as a quencher, it is possible to improve the performance deterioration due to the deactivation of the acid accompanying the withdrawal after exposure. Specific examples of the basic compound used in the quencher include those represented by the following formulas.

[0026]

[0027]

Wherein R ¹⁷ , R ¹⁸ , R ¹⁹ , R ²⁰ and R ²¹
Each independently represents hydrogen, an alkyl group, a cycloalkyl group or aryl. The alkyl group, cycloalkyl group and aryl group may each independently have at least one substituent selected from the group consisting of a hydroxyl group, an amino group and an alkoxy group having 1 to 6 carbon atoms. The amino group may be substituted with an alkyl group having 1 to 18 carbon atoms. The alkyl group preferably has about 1 to 8 carbon atoms, the cycloalkyl group preferably has about 5 to 10 carbon atoms, and the aryl group preferably has about 6 to 10 carbon atoms. A represents alkylene, carbonyl, imino, sulfide or disulfide. The alkylene preferably has about 2 to 6 carbon atoms. In addition, any of R ^{17 to} R ²¹ that can have both a linear structure and a branched structure may be used. In particular, it is preferable to use a compound having a structure represented by the formula (VI) as a quencher from the viewpoint of improving resolution. Specific examples include tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, phenyltrimethylammonium hydroxide, and 3-trifluoromethyl-phenyltrimethylammonium hydroxide. .

In the resist composition of the present invention, the ratio of the resin and the acid generator is 80 to 99.9% by weight and the acid generator is 20 to 0% by weight based on the total weight of the resin and the acid generator. .
Preferably it is in the range of 1% by weight. When using a basic compound as a quencher, the basic compound is preferably in the range of 0.001 to 1 part by weight, more preferably 0.01 to 0.3 part by weight, based on 100 parts by weight of the resin. preferable. The composition may also optionally include a sensitizer,
Various additives such as dissolution inhibitors, other resins, surfactants, stabilizers, and dyes may be contained in small amounts.

The resist composition of the present invention usually contains a solvent for dissolving the above-mentioned components and is used as a liquid resist composition. The composition is applied to a substrate such as a silicon wafer according to a conventional method such as spin coating. The solvent used here may be any as long as it dissolves each component, has an appropriate drying rate, and gives a uniform and smooth coating film after the solvent is evaporated. Can. For example, glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate or propylene glycol monomethyl ether acetate; esters such as ethyl lactate, butyl acetate, amyl acetate or ethyl pyruvate; acetone, methyl isobutyl ketone, 2-heptanone Or ketones such as cyclohexanone; and cyclic esters such as γ-butyrolactone. These solvents can be used alone or in combination of two or more.

The resist film applied on the substrate and dried is subjected to an exposure treatment for patterning, and then subjected to a heat treatment for accelerating a deprotection group reaction, and then developed with an alkali developing solution. You. The alkaline developer used here can be various alkaline aqueous solutions used in this field, but generally, aqueous solutions of tetramethylammonium hydroxide and (2-hydroxyethyl) trimethylammonium hydroxide (commonly known as choline) are used. Often used.

[0032]

EXAMPLES Next, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples. In the examples, parts indicating the amount of use are based on weight unless otherwise specified. The weight average molecular weight is
It is a value determined by gel permeation chromatography using polystyrene as a standard.

Resin Synthesis Example 1 (Synthesis of Resin A1) 2-Ethyl-2-adamantyl-methacrylate, 3-ethyl-2-adamantyl-methacrylate
Hydroxy-1-adamantyl acrylate, 2-norbornene and 2 (5H) furanone were used in a molar ratio of 2: 2:
3: 3 (20.0 g: 17.9 g: 11.4 g: 10.
2g), and 3-ethylcapryl 3-mercaptopropionate at 3 mol% of the total monomers was further added. Thereto, methyl isobutyl ketone was added at 2 times the weight of all monomers to prepare a solution. Further, azobisisobutyronitrile was added as an initiator in an amount of 1 mol% of all monomers. Then 80
C., and stirred for 15 hours. After cooling the reaction mass, the operation of precipitating with a large amount of methanol was performed three times and purification was performed to obtain a copolymer having a weight average molecular weight of about 6000. This is called resin A1.

Resin Synthesis Example 2 (Synthesis of Resin AX) 2-ethyl-2-adamantyl-methacrylate, 3-ethyl-2-adamantyl-methacrylate
Hydroxy-1-adamantyl methacrylate and α
-Methacryloyloxy-γ-butyrolactone was mixed at a molar ratio of 2: 1: 1 (20.0 g: 9.5 g: 6.8 g), and methyl isobutyl ketone was added thereto 2 times by weight of all monomers to form a solution. Further, azobisisobutyronitrile was added as an initiator in an amount of 2 mol% of all monomers. Thereafter, the temperature was raised to 85 ° C., and the mixture was stirred for 5 hours. After the reaction mass was cooled, the operation of precipitating with a large amount of methanol was performed three times and purification was performed to obtain a copolymer having a weight average molecular weight of about 10,000. This is called resin AX.

Next, in addition to each of the resins obtained in the above resin synthesis examples, a resist composition was prepared using the following acid generator and quencher, and evaluated.

Example 1 and Comparative Example 1 The following components were mixed and dissolved, and further filtered through a fluororesin filter having a pore size of 0.2 μm to prepare a resist solution.

Resin (types are described in Table 1) 10 parts Acid generator: p-tolyldiphenylsulfonium perfluorooctanesulfonate 0.2 part Quencher: 2,6-diisopropylaniline 0.0075 part Solvent: Example 1 Propylene glycol monomethyl ether acetate 9 parts γ-butyrolactone 3 parts 2-heptanone 48 parts Comparative Example 1 is propylene glycol monomethyl ether acetate 57 parts γ-butyrolactone 3 parts

"ARC-25-8" which is a composition for an organic anti-reflection film manufactured by Brewer Co., was applied at 215.degree.
The resist solution prepared above was spin-coated on a silicon wafer on which an organic antireflection film having a thickness of 780 ° was formed by baking under the condition of 0 second so that the film thickness after drying was 0.39 μm. After the application of the resist solution, prebaking was performed on a direct hot plate at a temperature shown in the column of “PB” in Table 1 for 60 seconds. An ArF excimer stepper [“NSR ArF” manufactured by Nikon Corporation, NA = 0.5]
5, σ = 0.6], and the line and space pattern was exposed while changing the exposure amount stepwise. After exposure,
Post-exposure baking was performed on a hot plate at a temperature shown in the column of “PEB” in Table 1 for 60 seconds, and paddle development was performed with a 2.38 wt% aqueous solution of tetramethylammonium hydroxide for 60 seconds. The line and space pattern after development on the organic antireflection film substrate was observed by a scanning electron microscope, and the effective sensitivity, resolution, and dimensional change by SEM were examined by the following method. The results are shown in Table 1. .

Effective sensitivity: Displayed at an exposure amount at which a line and space pattern of 0.18 μm becomes 1: 1. Resolution: Displayed with the minimum size of a line and space pattern separated by the exposure amount of the effective sensitivity. Dimensional change due to SEM: 0.22 as effective sensitivity exposure
A μm line pattern was measured. Using a length measuring SEM (KLA-8100XP) manufactured by KLA-Tencor Inc., the same location is repeatedly measured every 10 seconds by a standard method under the conditions of an acceleration voltage of 800 V and a current value of 12 pA, and the first measurement value is obtained. And the difference between the measured values after 20 measurements.

[0040]

[Table 1] 例 Example No. Resin PB PEB Effective sensitivity Resolution SEM shrinkage ℃ ℃ (mJ / cm ² ) (μm) (μm) ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Example 1 A1 120 120 12 0.15 0.006 比較 Comparative Example 1 AX 130 130 22 0.15 0.01 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━

As is clear from Table 1, the resist of Example 1 is excellent in the balance between sensitivity and resolution and has a high SE.
Dimensional shrinkage due to electron beam irradiation of M is small.

[0042]

Industrial Applicability The chemically amplified positive resist composition of the present invention has an excellent balance between resolution and sensitivity, and has a small dimensional shrinkage due to electron beam irradiation of SEM. Therefore, this composition is suitable for exposure using a KrF excimer laser, an ArF excimer laser, or the like, whereby a high-performance resist pattern is provided, and high-precision dimensional measurement can be performed.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C08F 234: 02) (72) Inventor Kaoru Araki 3-1-198 Kasuganaka, Konohana-ku, Osaka Sumitomo F-term (reference) in Chemical Industries, Ltd.

Claims (8)

[Claims] 1. A resin comprising a polymerized unit derived from a monomer represented by the following formula (I), which itself is insoluble in alkali but becomes alkali-soluble by the action of an acid, and an acid generator. A chemically amplified positive resist composition comprising: (In the formula, R ₁ and R ₂ independently represent hydrogen or a methyl group.) 2. 80 to 99.9% by weight of the resin and 20 to 0.1% by weight of the acid generator, based on the total weight of the resin and the acid generator.
The composition of claim 1 wherein 3. The composition according to claim 1, wherein the composition has 5 to 50 mol% of polymerized units derived from the monomer represented by the formula (I). 4. The composition according to claim 1, wherein the resin has a polymerized unit having a group that is cleaved by the action of an acid. 5. The composition according to claim 4, wherein the polymerized unit having a group that is cleaved by the action of an acid is a polymerized unit derived from 2-alkyl-2-adamantyl (meth) acrylate. 6. The composition according to claim 5, wherein the polymer units derived from 2-alkyl-2-adamantyl (meth) acrylate are polymer units derived from 2-ethyl-2-adamantyl (meth) acrylate. 7. The composition according to claim 1, further comprising a basic compound as a quencher. 8. The composition according to claim 7, wherein the basic compound is in the range of 0.001 to 1 part by weight based on 100 parts by weight of the resin.