JP2002317262A - Film deposition system and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition system for preparing an organic compound film having a plurality of functional regions. SOLUTION: A plurality of vaporization sources (203a-203c) are provided in a film deposition chamber 210 and the functional regions composed of the respective organic compounds are continuously deposited and mixed regions can be formed in the boundary between the functional regions. In the film deposition chamber, the dense film is deposited by providing a means for giving energy to organic compound molecules to be film deposited in a molecule activating region 213.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a light-emitting device having a film containing an organic compound capable of emitting light by applying an electric field (hereinafter referred to as "organic compound film"), an anode and a cathode. The present invention relates to a film forming apparatus and a film forming method used. In particular, the present invention relates to the manufacture of a light-emitting element having a lower driving voltage and a longer lifetime than a conventional light-emitting element. Further, a light-emitting device in this specification refers to an image display device or a light-emitting device using a light-emitting element as an element. In addition, the light emitting device has a connector, for example, an anisotropic conductive film ((FPC:
flexible printed circuit) or TAB (Tape Automat
ed Bonding) tape or TCP (Tape Carrier Packag)
e) A module with a printed circuit board attached to the end of a TAB tape or TCP, or an IC (integrated circuit) using a COG (Chip On Glass) method for a light emitting element
Includes all modules that are directly implemented.

[0002]

2. Description of the Related Art A light emitting element is an element that emits light when an electric field is applied. The light emission mechanism is such that by applying a voltage across the organic compound layer between the electrodes, the electrons injected from the cathode and the holes injected from the anode recombine at the luminescent center in the organic compound layer to excite the molecule. It is said to emit energy by emitting energy when the molecular exciton returns to the ground state.

[0003] The molecular exciton formed by the organic compound can be a singlet excited state or a triplet excited state, and the present specification includes a case where either excited state contributes to light emission. It shall be.

In such a light emitting device, the organic compound layer is usually formed as a thin film having a thickness of less than 1 μm. Further, the light emitting element is a self-luminous element in which the organic compound layer itself emits light, and thus does not require a backlight as used in a conventional liquid crystal display. Therefore, it is a great advantage that the light emitting element can be manufactured to be extremely thin and lightweight.

Further, in an organic compound layer of, for example, about 100 to 200 nm, the time from injection of carriers to recombination is about several tens of nanoseconds in consideration of the carrier mobility of the organic compound layer. Even within the process from recombination to light emission, light emission occurs on the order of microseconds or less. Therefore, one of the features is that the response speed is extremely fast.

Further, since the light-emitting element is a carrier-injection type light-emitting element, it can be driven by a DC voltage and does not easily generate noise. Regarding the driving voltage, first, the thickness of the organic compound film is made to be a uniform ultra-thin film of about 100 nm, and the electrode material is selected so as to reduce the carrier injection barrier to the organic compound film. , A sufficient luminance of 100 cd / m ² was achieved at 5.5 V (Reference 1: CW Tang and SA VanSlyke,
"Organic electroluminescent diodes", Applied Phys
ics Letters, vol. 51, No. 12, 913-915 (1987)).

[0007] Due to such characteristics as thin and light weight, high-speed response, and DC low-voltage driving, light-emitting elements are receiving attention as next-generation flat panel display elements. Also,
Since it is a self-luminous type and has a wide viewing angle, it has relatively good visibility and is considered to be effective as an element used for a display screen of an electric appliance.

By the way, regarding the structure of the light emitting device shown in Document 1, first, as a method of reducing the carrier injection barrier, a work function is low and Mg: Ag is relatively stable.
The alloy is used for the cathode to enhance electron injection. This makes it possible to inject a large amount of carriers into the organic compound film.

Further, as an organic compound film, a single heterostructure in which a hole transport layer composed of a diamine compound and an electron transporting light emitting layer composed of tris (8-quinolinolato) aluminum (hereinafter, referred to as “Alq ₃ ”) are laminated. By applying the structure, the recombination efficiency of carriers is dramatically improved. This is explained as follows.

[0010] For example, in the case of a light emitting device having only Alq ₃ monolayers, since Alq ₃ is an electron-transporting property, most of electrons injected from the cathode will reach the anode without recombining with holes The light emission efficiency is extremely poor. That is, in order to make a single-layer light-emitting element emit light efficiently (or to be driven at a low voltage), a material capable of transporting both electrons and holes in a well-balanced manner (hereinafter referred to as a “bipolar material”).
And Alq ₃ does not satisfy the condition.

However, if a single heterostructure as described in Document 1 is applied, electrons injected from the cathode are blocked at the interface between the hole transporting layer and the electron transporting light emitting layer, and are injected into the electron transporting light emitting layer. You are trapped. Therefore, the recombination of carriers is efficiently performed in the electron-transporting light-emitting layer, resulting in efficient light emission.

If the concept of such a carrier blocking function is developed, it becomes possible to control the recombination region of the carrier. As an example, by inserting a layer capable of blocking holes (hole blocking layer) between the hole transport layer and the electron transport layer, the holes are confined in the hole transport layer, and There is a report that succeeded in making the light emission. (Reference 2: Yasunori KIJIMA, Nobutoshi ASA
I and Shin-ichiro TAMURA, "A Blue Organic Light Em
itting Diode ", Japanese Journal of AppliedPhysics,
Vol. 38, 5274-5277 (1999)).

The light-emitting element described in Document 1 can be said to be an idea of functional separation in which the hole transport is performed by the hole transport layer, and the electron transport and light emission is performed by the electron-transporting light-emitting layer. This concept of functional separation has further evolved into a concept of a double hetero structure (three-layer structure) in which a light emitting layer is interposed between a hole transport layer and an electron transport layer (Reference 3: Chihay).
a ADACHI, Shizuo TOKITO, Tetsuo TSUTSUI and Shogo
SAITO, "Electroluminescence in Organic Films with
Three-Layered Structure ", Japanese Journalof Appli
ed Physics, Vol. 27, No. 2, L269-L271 (1988)).

The advantage of such function separation is that the function separation eliminates the need to simultaneously provide various functions (e.g., light-emitting properties, carrier transport properties, and carrier injection properties from an electrode) to one kind of organic material. That is, a wide degree of freedom can be given to molecular design and the like (for example, it is not necessary to forcibly search for a bipolar material). That is, high luminous efficiency can be easily achieved by combining materials having good light emitting characteristics, materials having excellent carrier transportability, and the like.

Due to these advantages, the concept of the laminated structure (carrier blocking function or function separation) itself described in Document 1 has been widely used up to the present.

In the production of these light-emitting elements, particularly in a mass production process, when a hole transport material, a light-emitting layer material, an electron transport material, and the like are laminated by vacuum deposition, the respective materials should not be contaminated. To this end, an in-line (multi-chamber) film forming apparatus is used. FIG. 15 is a top view of the film forming apparatus.

In the film forming apparatus shown in FIG. 15, a hole transport layer, a light emitting layer, and a light emitting layer are formed on a substrate having an anode (such as ITO).
The three-layer structure (double hetero structure) of the electron transport layer, the deposition of the cathode, and the sealing treatment are possible.

First, a substrate having an anode is loaded into the loading chamber. The substrate is transferred to the ultraviolet irradiation chamber via the first transfer chamber, and the surface of the anode is cleaned by the irradiation of the ultraviolet light in a vacuum atmosphere. When the anode is an oxide such as ITO, the anode is oxidized in a pretreatment chamber.

Next, a hole transport layer is formed in the vapor deposition chamber 1501, a light emitting layer (in FIG. 15, three colors of red, green and blue) is formed in the vapor deposition chambers 1502 to 1504, and an electron transport layer is formed in the vapor deposition chamber 1505. A layer is formed and a cathode is formed in deposition chamber 1506. Finally, a sealing process is performed in the sealing chamber, and a light emitting element is obtained from the unloading chamber.

As a feature of such an in-line type film forming apparatus, the deposition chambers 150 in which the deposition of each layer is different from each other.
1 to 1505. Therefore, one evaporation source (1511 to 1515) may be usually provided in each of the evaporation chambers 1501 to 1505. (However, in the case where the light emitting layer is formed by doping a dye in the evaporation chambers 1502 to 1504, Two evaporation sources may be required to form a co-evaporated layer). That is, the device is configured such that the materials of the respective layers hardly mix with each other.

FIG. 16 shows the structure of a light emitting element manufactured by using the film forming apparatus described with reference to FIG. In FIG.
An anode 1602 and a cathode 160 formed on a substrate 1601
An organic compound layer 1604 is formed between the first organic compound layer 1604 and the second organic compound layer 1604 because different organic compounds are formed in different evaporation chambers. The stack interface shown by the organic compound layer 1606 and the third organic compound layer 1607 is clearly separated.

Here, a region 160 near the interface between the first organic compound layer 1605 and the second organic compound layer 1606 is used.
8 is shown in FIG. Here, the interface 160 between the first organic compound layer 1605 and the second organic compound layer 1606 is used.
It can be seen that the impurity 1610 is mixed into the sample No. 9. That is, in the conventional film forming apparatus shown in FIG. 15, since each layer is formed in another film forming chamber, when the substrate moves between the film forming chambers, the impurities 1609 adhere to the substrate surface. As a result, the impurities 1610 are mixed into the interface 1609. Note that the impurities referred to here are:
Specifically, it is oxygen or water.

[0023]

Since the above-described laminated structure is a junction between different kinds of materials, an energy barrier always occurs at the interface. If an energy barrier exists, the movement of carriers at the interface is hindered, and thus the following problems are raised.

First, there is an obstacle to further reduction of the driving voltage. In fact, in the current light emitting device, the device having a single layer structure using a conjugated polymer is superior in terms of driving voltage, and has a power efficiency (unit:
[lm / W]) (but comparing emission from singlet excited state) (Reference 4: Tetsuo Tsutsui, "The Japan Society of Applied Physics" Journal, Vol. 11, No. 1, P. 8 (200
0)).

The conjugated polymer described in Reference 4 is a bipolar material, and the same level of carrier recombination efficiency as that of the laminated structure can be achieved. Therefore, if the recombination efficiency of carriers can be made equivalent without using a laminated structure by a method such as using a bipolar material, it is shown that a single-layer structure with fewer interfaces actually lowers the driving voltage. I have.

For example, at the interface with the electrode, there is a method of reducing the driving voltage by inserting a material for relaxing the energy barrier to enhance the carrier injectability (Reference 5: Ta).
keoWakimoto, Yoshinori Fukuda, Kenichi Nagayama, A
kira Yokoi, Hitoshi Nakada, and Masami Tsuchida, "
Organic EL Cells Using Alkaline Metal Compoundsas
Electron Injection Materials ", IEEE TRANSACTIONS O
N ELECTRON DEVICES, VOL. 44, NO.8, 1245-1248 (199
7)). In Literature 5, the drive voltage was successfully reduced by using Li ₂ O as the electron injection layer.

However, between organic materials (for example, between the hole transport layer and the light emitting layer, hereinafter referred to as “organic interface”)
This is an unsolved field for carrier mobility, and is considered to be an important point for catching up with a low driving voltage of a single-layer structure.

Further, as a problem caused by the energy barrier, influence on the life of the light emitting element is considered. That is, the movement of carriers is hindered, and the charge is accumulated, thereby lowering the luminance.

Although a clear theory has not been established for this degradation mechanism, a hole injection layer is inserted between the anode and the hole transport layer, and a rectangular wave ac drive is used instead of a dc drive. It has been reported that the decrease in luminance can be suppressed (Reference 6: SA VanSlyke, CH Ch.
en, and CW Tang, "Organic electroluminescentdev
ices with improved stability ", Applied Physics Let
ters, Vol. 69, No. 15, 2160-2162 (1996)). This can be said to be an experimental proof that the decrease in luminance was able to be suppressed by eliminating charge accumulation by inserting the hole injection layer and ac driving.

As described above, while the laminated structure has the merit that the recombination efficiency of carriers can be easily increased and the selection range of materials can be widened from the viewpoint of functional separation, it is necessary to create a large number of organic interfaces. Thus, it can be said that the movement of the carrier is hindered and the driving voltage and the luminance are reduced.

In a conventional film forming apparatus, when a hole transporting material, a light emitting layer material, an electron transporting material, and the like are laminated by vacuum deposition, they are placed in separate chambers so as not to contaminate the materials. An evaporation source is provided to form different layers in different chambers. In such an apparatus, when the above-described laminated structure is formed, not only is the organic interface clearly separated, but also the substrate is formed in the chamber. There is a problem that impurities such as water and oxygen are mixed into the organic interface when moving between them.

Therefore, according to the present invention, the concept of different from the conventional laminated structure is used to alleviate the energy barrier existing in the organic compound film to enhance the mobility of carriers, and at the same time, to improve the function separation of the laminated structure. Similarly, a film forming apparatus for manufacturing an element having a function of various materials is provided. Another object is to provide a film forming method using these film forming apparatuses. Furthermore, in order to improve the characteristics of an organic compound film formed for the purpose of improving element characteristics and prolonging the life of the element, a film formation apparatus capable of forming a denser film than ever before is provided. Aim.

[0033]

As for the relaxation of the energy barrier in the laminated structure, the technique of inserting a carrier injection layer as shown in Reference 5 is remarkably observed. In other words, at the interface of the laminated structure with a large energy barrier,
By inserting a material that relaxes the energy barrier, the energy barrier can be designed stepwise.

As a result, it is possible to enhance the carrier injection property from the electrode, and it is possible to lower the driving voltage to some extent. However, the problem is that by increasing the number of layers, the number of organic interfaces increases conversely. This is considered to be the reason that the single-layer structure retains the top data of the driving voltage and the power efficiency as shown in Reference 4.

Conversely, by overcoming this point, it is possible to take advantage of the advantages of the laminated structure (a variety of materials can be combined and no complicated molecular design is required),
In addition, it can catch up with the drive voltage and power efficiency of the single layer structure.

Therefore, in the present invention, when an organic compound film 104 composed of a plurality of functional regions is formed between the anode 102 and the cathode 103 of the light emitting element as shown in FIG. Between the second functional area 106,
A structure having a first mixed region made of both a material constituting the first functional region 105 and a material constituting the second functional region is formed.

Further, between the second functional region 106 and the third functional region 107, a second material composed of both the material constituting the second functional region 106 and the material constituting the third functional region 107 is provided. The structure having the mixed region 109 of the above is formed.

It is considered that by applying the structure as shown in FIG. 1A, the energy barrier existing between the functional regions is alleviated, and the injection property of carriers is improved. Therefore, it is possible to reduce the driving voltage and prevent the luminance from decreasing.

As described above, in the film forming apparatus according to the present invention, the region (the first functional region) in which the first organic compound can exhibit the function and the second material different from the material constituting the first functional region are used. In the production of a light-emitting element including at least a region in which two organic compounds can exhibit functions (a second functional region), and a light-emitting device having the same, the first functional region and the second functional region In the meantime, a mixed region comprising an organic compound constituting the first functional region and an organic compound constituting the second functional region is produced.

Further, as shown in FIG. 1A, a first mixed region 107 formed between the first functional region 105 and the second functional region 106 is formed as shown in FIG. Since films are continuously formed in the same film forming chamber, FIG.
It is possible to prevent impurities from being mixed as shown in FIG.

The first organic compound and the second organic compound have a hole injecting property for receiving holes from the anode and a hole transporting property and a hole transporting property in which the hole mobility is larger than the electron mobility. It has a property selected from the group consisting of electron transporting properties, which have a higher electron mobility than electron mobility, electron injecting properties for receiving electrons from the cathode, blocking properties for preventing the transfer of holes or electrons, and luminescent properties for emitting light. And have different properties.

The organic compound having a high hole-injecting property is preferably a phthalocyanine compound, the organic compound having a high hole-transporting property is preferably an aromatic diamine compound, and the organic compound having a high electron-transporting property. as,
A metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, or a phenanthroline derivative is preferable. Further, as the light-emitting organic compound, a metal complex containing a quinoline skeleton, a metal complex containing a benzoxazole skeleton, or a metal complex containing a benzothiazole skeleton that emits light stably is preferable.

Table 1 shows combinations of the first and second functional areas described above. Combinations A to E
May be introduced alone (for example, only A) or may be introduced in combination (for example, both A and B).

[0044]

[Table 1]

When the combination C and D are introduced in combination (that is, when a mixed region is introduced at both interfaces of the luminescent functional region), diffusion of molecular excitons formed in the luminescent region is prevented. Thereby, the luminous efficiency can be further increased. Therefore, the excitation energy of the luminescent region is
It is preferably lower than the excitation energy of the hole transporting region and the excitation energy of the electron transporting region. In this case, a light-emitting material having poor carrier transportability can be used as the light-emitting region, and thus there is an advantage that the range of material selection can be widened.
Note that the excitation energy referred to in this specification refers to the highest occupied molecular orbital (HOMO) in a molecule.
molecular orbital) and the lowest unoccupied molecular orbital (LUMO: lowe)
St unoccupied molecular orbital).

More preferably, the light-emitting region is composed of a host material and a light-emitting material (dopant) having lower excitation energy than the host material, and the excitation energy of the dopant is the same as the excitation energy of the hole transporting region and the electron. The design is to be lower than the excitation energy of the transport region. Thereby, diffusion of molecular excitons of the dopant can be prevented, and the dopant can emit light effectively. If the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased.

Further, in the film forming apparatus of the present invention, a light emitting element having a structure as shown in FIG. 1C can be formed. In FIG. 1C, an organic compound film 104 formed between an anode 102 and a cathode 103 on a substrate 101 includes a first functional region 110 made of a first organic compound and a second organic compound. A structure having a first mixed region 112 made of both a material forming the first function region 110 and a material forming the second function region 111 is formed between the first mixed region 112 and the second function region 111. Further, by doping the first mixed region entirely or partially with the third organic compound, the third functional region 113 can be formed entirely or partially in the first mixed region. . Note that the third functional region 113 formed here is a region that emits light.

When the device structure shown in FIG. 1C is formed, the first organic compound and the second organic compound are composed of a hole injecting property, a hole transporting property, an electron transporting property, and an electron injecting property. , Formed from an organic compound having a property selected from a group of blocking properties, and the organic compound forming each,
Have different properties. Furthermore, the third organic compound is a light-emitting organic compound (dopant) and needs to use a material having lower excitation energy than the first organic compound and the second organic compound. Note that in the third functional region 113, the first organic compound and the second organic compound serve as hosts for the dopant.

In recent years, from the viewpoint of luminous efficiency,
An organic light-emitting element that can convert energy released when returning from a triplet excited state to a ground state (hereinafter, referred to as “triplet excited energy”) into light emission has been attracting attention because of its high luminous efficiency (Reference 7: DF O'Brien, MA Bal
do, ME Thompson and SR Forrest, "Improvedene
rgy transfer in electrophosphorescent devices ", Ap
plied Physics Letters, vol. 74, No. 3, 442-444 (19
99)) (Reference 8: Tetsuo TSUTSUI, Moon-Jae YANG, Masa
yuki YAHIRO, Kenji NAKAMURA, Teruichi WATANABE, Ta
ishi TSUJI, Yoshinori FUKUDA, Takeo WAKIMOTO and S
atoshi MIYAGUCHI, "High Quantum Efficiency in Orga
nic Light-Emitting Devices with Iridium-Complex as
a Triplet Emissive Center ", Japanese Journal of A
pplied Physics, Vol. 38, L1502-L1504 (1999)).

Reference 7 uses a metal complex having platinum as the central metal, and Reference 8 uses a metal complex having iridium as the central metal. An organic light-emitting element that can convert these triplet excitation energy into light emission (hereinafter, referred to as a “triplet light-emitting element”) can achieve higher luminance light emission and higher light emission efficiency than before.

However, according to the report example of Reference 8,
The half-life of luminance in the case where the initial luminance was set at 500 cd / m ² is 17
It is about 0 hours, and there is a problem in the element life. Therefore, by applying the present invention to a triplet light-emitting element, a very high-performance light-emitting element that has a long lifetime can be provided in addition to high-luminance light emission and high light emission efficiency due to light emission from a triplet excited state. .

Therefore, in the light-emitting element shown in FIG. 1C, a material capable of converting triplet excitation energy into light emission may be added as a dopant to the first mixed region 112 to form the third functional region 113. Included in the present invention. In the formation of the mixed region, the mixed region may have a concentration gradient.

In the film forming apparatus of the present invention, a plurality of functional regions are formed in the same film forming chamber having a plurality of evaporation sources.
In addition, a light-emitting element having a mixed region as described above is formed.

The film forming chamber 210 of the film forming apparatus of the present invention will be described with reference to FIG. Note that the same components as those shown in FIG. 1 are denoted by the same reference numerals. As shown in FIG. 2, a holder 2
A metal mask 202 fixed at 01 is provided, and an evaporation source 203 is provided further below the metal mask 202. The evaporation source 203 (203a to 203c) serves as an organic compound 204 (204a to 204) for forming an organic compound film.
c) is provided with a material chamber 205 (205a to 205).
c) and a shutter 206 (206a to 206c). Note that in the film formation apparatus of the present invention, the evaporation source or the substrate to be deposited is preferably moved (rotated) so that the film is formed uniformly.

The material chamber 205 (205a-205)
c) is made of a conductive metal material, specifically, as shown in FIG.
The structure shown in FIG. The material chamber 205 (205a
When the internal organic compound 204 (204a to 204c) is heated by a resistance generated when a voltage is applied to the substrate 201 to 205c), the organic compound 204 is vaporized and deposited on the surface of the substrate 201. Note that, in this specification, the substrate 201 includes a substrate and a thin film formed thereover, and here, refers to a state in which the anode 102 is formed over the substrate 101 illustrated in FIG.

The shutter 206 (206a-20)
6c) is a vaporized organic compound 204 (204a to 20a).
4c) is controlled. That is, when the shutter is open, the organic compound 204 (20
4a to 204c) can be deposited. Therefore, in this specification, when the shutter is opened and the organic compound is deposited, it is called that the evaporation source operates.

The organic compound 204 (204a-20)
In step 4c), it is desirable to vaporize by heating before vapor deposition and to perform vapor deposition as soon as the shutters 206 (206a to 206c) are opened during vapor deposition, because the film formation time can be shortened.

Further, in the film forming apparatus of the present invention, an organic compound film having a plurality of functional regions is formed in one film forming chamber, and a plurality of evaporation sources 203 are provided correspondingly. I have. In the present invention, a plurality of organic compounds are simultaneously deposited by operating a plurality of evaporation sources simultaneously. Further, a plurality of organic compounds can be continuously deposited by operating a plurality of evaporation sources continuously. Further, a plurality of evaporation sources can be continuously deposited without being temporally divided. In addition,
When the evaporation source is operated, the organic compound is vaporized and scattered upward, and the opening 2 provided in the metal mask 202 is opened.
12 and is deposited on the substrate 200.

In the film forming chamber of the present invention, an exhaust means for exhausting the inside of the film forming chamber is provided. In addition, an exhaust pump is used as the exhaust means, and the pressure is reduced by this. The ultimate vacuum at the time of decompression is desirably 10 ⁻⁶ Pa or more. For example, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used in combination. It is. For example, the first exhaust unit 2
A cryopump is used as 14 and the second exhaust means 21 is used.
5, a dry pump or the like can be used in combination.

In this embodiment, in addition to the film forming chamber, the surface area of each of the processing chambers such as the load chamber, the alignment chamber, the sealing chamber, and the unloading chamber, which constitutes the film forming chamber, is reduced. In order to reduce the adsorbability of impurities such as oxygen and water, a material such as aluminum or stainless steel (SUS), which has been subjected to electrolytic polishing and made into a mirror surface, is used for the inner wall surface. An internal member made of a processed material such as ceramics is used. These materials have an average surface roughness of 5 nm or less (preferably 3 nm).
Below). The average surface roughness referred to here is a three-dimensional extension of the center line average roughness defined in JIS B0601 so that it can be applied to the surface.

A specific film forming method using the above film forming apparatus will be described below.

First, the first organic compound 204a provided in the first material chamber 205a is deposited. Note that the first organic compound 204a is vaporized in advance by resistance heating, and is scattered in the direction of the substrate 200 by opening the shutter 206a during vapor deposition. As a result, FIG.
The first functional region 105 shown in FIG.

Then, with the first organic compound 204a being deposited, the shutter 206b is opened, and the second material chamber 2 is opened.
The second organic compound 204b provided in 05b is deposited. Note that the second organic compound is also vaporized by resistance heating in advance, and is scattered in the direction of the substrate 201 by opening the shutter 206b during vapor deposition. Here, the first mixed region 107 including the first organic compound 204a and the second organic compound 204b can be formed.

After a while, the shutter 20
Only 6a is closed and the second organic compound 204b is deposited. Thereby, the second functional region 106 can be formed.

Here, a method of forming a mixed region by simultaneously depositing two kinds of organic compounds has been described. However, after depositing the first organic compound, the second organic compound is deposited under the deposition atmosphere. By depositing a compound, a mixed region can be formed between the first functional region and the second functional region.

Next, with the second organic compound 204b deposited, the shutter 206c is opened and the third material chamber 20b is opened.
5c, the third organic compound 204c is deposited. Note that the third organic compound 204c is also vaporized in advance by resistance heating, and the shutter 206c
Are scattered in the direction of the substrate 200 by opening. Here, the second organic compound 204b and the third organic compound 20
4c can be formed.

After a while, the shutter 20
Only 6b is closed, and the third organic compound 204c is deposited. Thereby, the third functional region 107 can be formed.

Finally, by forming the cathode 103, the light emitting element formed by the film forming apparatus of the present invention is completed.

Further, the light emitting element shown in FIG. 1C formed by the film forming apparatus of the present invention has a structure similar to that of the first organic compound 204a.
After forming the first functional region 110 by using the first mixed region 112 formed of the first organic compound 204a and the second organic compound 204b, the first mixed region 11
During the formation of 2, the shutter 206c is opened temporarily (or at the same time) to simultaneously perform the deposition (doping) of the third organic compound 204c, thereby forming the third functional region 113.

In the case where the third organic compound is temporarily doped, by closing the shutter 206c,
The first mixed region 112 is formed again. When the third organic compound is doped into the entire first mixed region 112, the shutter 206b is closed at the same time as the shutter 206c.

Further, the second functional region 111 is formed by the second organic compound 204b. Thus, the organic compound film 104 is formed. Then, a light emitting element is formed by forming a cathode in another deposition chamber or another deposition apparatus.

Here, FIG. 2B shows an evaporation source provided in the film formation chamber. FIG. 2B shows the arrangement of the evaporation sources provided in the film formation chamber when viewed from the top of the film formation chamber.

Here, a case where an organic compound film is formed using three kinds of organic compounds as shown in FIG. 1A will be described. Evaporation sources 203a, 203b, and 203c each having three types of organic compounds are arranged in a horizontal row. This row is provided with k rows (k = 1 to 10 rows). By providing a plurality of evaporation sources having the same organic compound in the same film formation chamber, the thickness of the organic compound formed on the substrate can be made uniform.
Here, the case where the three kinds of organic compounds form different arrangements in the adjacent row (l) has been described.
It is not always necessary to form such an array, and rows arranged in the same order may be arranged.

In the film forming apparatus of the present invention, a film is formed using a plurality of evaporation sources in the same film forming chamber.
In order to improve film formation, the evaporation source equipped with the organic material used for film formation moves to the optimum position under the substrate during film formation, or the substrate moves to the optimum position on the evaporation source. A function of moving may be provided.

In the film forming chamber of the film forming apparatus of the present invention, a mechanism is provided such that an organic compound film formed of an organic compound forms a denser film.

Specifically, the organic compound that forms the organic compound film in the film forming chamber is vaporized by being heated during the film formation, scatters on the substrate by the kinetic energy of the molecule, and forms the film on the substrate. However, in order for these organic compounds to form a film more densely on the substrate, it is necessary to increase the time during which the organic compound as a molecule stays on the substrate surface.

However, since the kinetic energy of the molecule given by heating decreases with time, it is necessary to re-energize the gas molecules in the molecule activation region 213 on the substrate surface to accelerate the kinetic energy. is there.

Therefore, a light source 211 for irradiating light is provided in the film forming chamber 210 to irradiate the organic compound molecules with light.
The organic compound that receives energy by light irradiation is activated. In addition, although infrared light, ultraviolet light, or visible light is emitted from the light source 211, infrared light is preferable in consideration of damage to organic compound molecules.

The organic compound molecules having a longer residence time on the substrate surface due to the light irradiation are more likely to be formed at an optimum position on the substrate, so that a denser film can be formed.

FIG. 3A shows the structure of an organic compound film when a normal film formation is performed, and FIG.
The structure of the organic compound film when the organic compound is irradiated with light in the molecule activation region 213 is shown.

An anode is formed on each of the substrates, and a first functional region 221 and a first mixed region 2 are formed thereon.
22, the second functional region 223 is formed, and finally the cathode is formed. The light emitting device has a structure in which the distance between the organic compound molecules is smaller in FIG. A denser film is formed. When a gap is formed between molecules in the organic compound film as shown in FIG. 3A, the gap between the molecules becomes a defect,
Since the movement of carriers is hindered at the defective portion, the charge is accumulated, thereby lowering the luminance and deteriorating the element. From the above, providing a light source in the film forming chamber,
It is effective to perform light irradiation during film formation.

Further, the deposition chamber according to the present invention is provided with a deposition prevention shield 207 for preventing an organic compound from adhering to the inner wall of the deposition chamber during vapor deposition. By providing the deposition prevention shield 207, an organic compound that has not been deposited on the substrate can be attached. A heater (heating wire) 208 is provided around the deposition shield 207.
Are provided in contact with each other, and the entirety of the deposition prevention shield 207 can be heated by the heater 208. By heating the deposition shield 207, the attached organic compound can be vaporized. This makes it possible to clean the inside of the film formation chamber.

The film forming apparatus of the present invention capable of forming an organic compound film as described above can form an organic compound film having a plurality of functional regions in the same film forming chamber. Is not contaminated by impurities, and a mixed region can be formed at the interface of the functional region. As described above, a light-emitting element having a plurality of functions can be manufactured without a clear stacked structure (that is, without a clear organic interface).

[0084]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a film forming apparatus according to the present invention will be described with reference to FIG. FIG. 4A is a top view of the film forming apparatus, and FIG. 4B is a cross-sectional view. In addition, a common code is used for a common part. Also,
In this embodiment mode, an example is described in which three types of organic compound films (red, green, and blue) are formed in each of the film forming chambers of an in-line film forming apparatus having three film forming chambers.

In FIG. 4A, reference numeral 400 denotes a load chamber, and a substrate provided in the load chamber 400 is transferred to the first alignment chamber 401. In the first alignment chamber 401, the alignment of the metal mask 403 fixed in advance to the holder 402 is performed for each holder, and the substrate 404 before vapor deposition is placed on the metal mask 403 after the alignment is completed. Thus, the substrate 404 and the metal mask 403 are integrated and transferred to the first film formation chamber 405.

Here, the metal mask 403 and the substrate 404
With reference to FIG. 5, the positional relationship of the holder 402 for fixing. Note that the same components as those in FIG. 4 are denoted by the same reference numerals.

FIG. 5A shows a cross-sectional structure. The holder 402 includes a mask holder 501, a shaft 502, a substrate holder 503, a control mechanism 504, and auxiliary pins 505. The metal mask 403 is fixed in accordance with the projection 506 on the mask holder 501, and the metal mask 4
The substrate 404 is placed on the substrate 03. The substrate 404 on the metal mask 403 is fixed by auxiliary pins 505.

FIG. 5B is a top view of the region 507 in FIG. Note that the substrate 404 is fixed by a substrate holder 503 as shown in FIG. 5A or 5B.

FIG. 5C is a sectional view taken along the line BB ′ of FIG. 5B. Assuming that the position of the metal mask 403 shown in FIG.
The position of the metal mask 403 shown in FIG. 5D in which the shaft 502 is moved in the Z-axis direction is that at the time of alignment.

In the case of FIG. 5D, the axis 502 is the X axis,
It is possible to move in the Y-axis and Z-axis directions.
The inclination (θ) of the plane with respect to the Z axis can be moved. Note that the control mechanism 504 outputs the movement information from the position information obtained by the CCD camera and the previously input position information, so that the position of the mask holder is set to a predetermined value via the shaft 502 connected to the control mechanism 504. Can be adjusted to the position.

FIG. 5E is an enlarged view of the region 508 of the metal mask 403. The metal mask 403 used here includes a mask a 509 and a mask b 510 formed using different materials. At the time of vapor deposition, an organic compound that has passed through these openings 511 is formed on a substrate. These shapes are devised so as to improve the film formation accuracy when vapor deposition is performed using a mask, and the mask b510 is used so as to be on the substrate 404 side.

When the alignment of the metal mask 403 is completed, the axis is moved in the Z-axis direction to move the metal mask 403 again to the position shown in FIG.
By fixing the metal mask 403 and the substrate 404 at 05, the alignment of the metal mask 403 and the alignment of the metal mask 403 and the substrate 404 can be completed.

In this embodiment, the openings of the metal mask 403 may be square, rectangular, circular, or elliptical, and may be arranged in a matrix or in a delta arrangement. In addition, it may be formed in a linear shape.

In FIG. 4, the first film forming chamber 405 has:
A plurality of evaporation sources 406 are provided. The evaporation source 4
Reference numeral 06 includes a material chamber (not shown) in which an organic compound is provided and a shutter (not shown) that controls opening and closing of the organic compound vaporized in the material chamber to scatter outside the material chamber.

Further, the plurality of evaporation sources 406 provided in the first film forming chamber 405 are provided with a plurality of organic compounds having different functions constituting the organic compound film of the light emitting element, respectively. Note that the organic compound here refers to a hole-injecting property for receiving holes from the anode, a hole-transporting property in which the hole mobility is larger than the electron mobility, and a property of the electron mobility than the hole mobility. Is an organic compound having properties such as a large electron transporting property, an electron injecting property for receiving an electron from a cathode, a blocking property for preventing movement of holes or electrons, and a light emitting property for emitting light.

The organic compound having a high hole-injecting property is preferably a phthalocyanine compound, the organic compound having a high hole-transporting property is preferably an aromatic diamine compound, and the organic compound having a high electron-transporting property. as,
A metal complex having a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, or a phenanthroline derivative is preferable. Further, as the organic compound emitting light, a metal complex containing a quinoline skeleton that emits light stably,
A metal complex containing a benzoxazole skeleton or a metal complex containing a benzothiazole skeleton is preferable.

In the first film forming chamber 405, the organic compounds provided in these evaporation sources are sequentially deposited by the method described with reference to FIG. 2 to thereby form a first organic compound film having a plurality of functional regions. Here, red) is formed.

Next, the substrate 404 is transported to the second alignment chamber 407. In the second alignment chamber 407, after the substrate 404 and the metal mask 403 are once separated, alignment of the metal mask 403 is performed so as to match the position where the second organic compound film is formed. After the completion of the alignment, the substrate 404 and the metal mask 403 are again formed.
And fix it.

Then, the substrate 404 is transferred to the second film forming chamber 408.
Transport to The second film formation chamber 408 is similarly provided with a plurality of evaporation sources, and has a plurality of functions by vapor-deposition using a plurality of organic compounds in order similarly to the first film formation chamber 405. A second organic compound film (here, green) composed of the region is formed.

Further, the substrate 404 is transported to the third alignment chamber 409. In the third alignment chamber 409, after separating the substrate 404 and the metal mask 403 once, alignment of the metal mask 403 is performed so as to match the position where the third organic compound film is formed. After the completion of the alignment, the substrate 404 and the metal mask 403 are again overlapped and fixed.

Then, the substrate 404 is transferred to the third deposition chamber 410.
Transport to Similarly, the third film formation chamber 410 is provided with a plurality of evaporation sources. Similarly to the other film formation chambers, a plurality of organic compounds are sequentially used for vapor deposition, so that a region having a plurality of functions can be obtained. A third organic compound film (here,
Blue) is formed.

Finally, the substrate 404 is placed in the unload chamber 41.
1 and taken out of the film forming apparatus.

As described above, by aligning the metal mask 403 in the alignment chamber each time a different organic compound film is formed, a plurality of organic compound films can be formed in the same apparatus. As described above, since the functional regions where one organic compound film is formed are formed in the same deposition chamber, impurity contamination between the functional regions can be avoided. Furthermore, in this film forming apparatus,
Since a mixed region can be formed between different functional regions, a light-emitting element having a plurality of functions can be manufactured without a clear stacked structure.

In this embodiment, an apparatus for forming an organic compound film has been described. However, the film forming apparatus of the present invention is not limited to this configuration, and is formed on an organic compound film. A structure in which a deposition chamber in which a cathode is formed or a treatment chamber in which a light-emitting element can be sealed may be provided. The order in which the organic compound films that emit red, green, and blue light are formed may be in any order.

Further, the means for cleaning the alignment chamber and the film forming chamber shown in this embodiment may be provided. In addition, in the area 412 of FIG.
When such a means is provided, a cleaning preliminary chamber 413 as shown in FIG. 6 can be provided.

In the cleaning preliminary chamber 413, NF
By decomposing a reactive gas such as ₃ or CF ₄ to generate radicals and introducing them into the second alignment chamber 407, cleaning in the second alignment chamber 407 becomes possible. The second alignment chamber 407
By providing a used metal mask in advance, the metal mask can be cleaned.
Further, the inside of the second film formation chamber 408 can be cleaned by introducing radicals into the second film formation chamber 408. Note that a cleaning preparatory chamber 413 is connected to the second alignment chamber 407 and the second film forming chamber 408 via a gate (not shown), respectively, so that the gate is opened when radicals are introduced. It is good to keep it.

[0107]

[Embodiment 1] A case where a film forming apparatus of the present invention is an in-line system will be described with reference to FIG. In FIG. 7, reference numeral 701 denotes a load chamber, from which a substrate is transferred. Note that in this embodiment, a substrate means a substrate formed up to an anode or a cathode of a light emitting element (up to an anode in this embodiment) on a substrate. In addition, loading room 70
1 is provided with an exhaust system 700a, and the exhaust system 700a is
The configuration includes a valve 71, a cryopump 72, a second valve 73, a third valve 74, and a dry pump 75.

The ultimate degree of vacuum in the film forming chamber is 10 ⁻⁶ Pa
The pumping speed is 100
It is desirable to use an exhaust pump of 00 l / s or more.

In this embodiment, the materials used in the processing chambers such as the load chamber, the alignment chamber, the film formation chamber, the sealing chamber, and the unload chamber which are cut off by the gate include:
Since the adsorbability of impurities such as oxygen and water can be reduced by reducing the surface area, a material such as aluminum or stainless steel (SUS) that has been subjected to electrolytic polishing and made into a mirror surface is used for the inner wall surface. An internal member made of a material such as ceramics that has been treated so as to minimize pores is used. These materials have an average surface roughness of 5n.
m or less (preferably 3 nm or less). In addition, the average surface roughness referred to here is JIS
This is a three-dimensional extension of the center line average roughness defined in B0601 so that it can be applied to a surface.

In addition, there is a method of forming an active surface on the inner wall of the film forming chamber by using a material which easily reacts with a gas.
Materials in this case include Ti, Zr, Nb, Ta, C
r, Mo, W, La, Ba, or the like may be used.

Although the first valve 71 is a main valve having a gate valve, a butterfly valve may be used also as a conductance valve. The second valve 73 and the third valve 74 are fore valves. First, the second valve 73 is opened and the load chamber 701 is driven by the dry pump 75.
Is roughly reduced in pressure, and then the first valve 71 and the third valve 74
And the pressure in the load chamber 701 is reduced to a high vacuum by the cryopump 72. Note that a turbo molecular pump or a mechanical booster pump may be used instead of the cryopump, or a cryopump may be used after the degree of vacuum is increased by the mechanical booster pump.

Next, reference numeral 702 denotes an alignment chamber. Here, alignment of the metal mask and placement of the substrate on the metal mask are performed for film formation in the film formation chamber to be transported next, and this is called an alignment chamber (A) 702. For the alignment method here,
This may be performed by the method described with reference to FIG. The alignment chamber (A) 702 has an exhaust system 700b. Also,
The load chamber 701 is hermetically shut off by a gate (not shown).

Further, the alignment chamber (A) 702 is
A cleaning spare room 713a is provided, and NF ₃ and C
By decomposing a reactive gas such as F ₄ to generate radicals and introducing them into the alignment chamber (A) 702, cleaning in the alignment chamber (A) 702 becomes possible. By providing a used metal mask in the alignment chamber (A) 702 in advance, the metal mask can be cleaned.

Next, reference numeral 703 denotes a film forming chamber for forming a first organic compound film by a vapor deposition method, which is called a film forming chamber (A). The film formation chamber (A) 703 includes an exhaust system 700c. The alignment chamber (A) 702 is hermetically shut off by a gate (not shown).

Further, like the alignment chamber (A) 702, the film forming chamber (A) 703 includes a cleaning preliminary chamber 713b.
Is provided. Note that here, radicals generated by decomposing a reactive gas such as NF ₃ or CF ₄ are introduced into the film formation chamber (A) 703 to thereby form the film formation chamber (A).
The inside of 703 can be cleaned.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (A) 703, and a first organic compound film which emits red light is formed. Further, as the evaporation source, a first evaporation source provided with a hole-injecting organic compound, a second evaporation source provided with a hole-transporting organic compound, and a host of an organic compound having a light-emitting property. A third evaporation source having an organic compound having a hole-transporting property, a fourth evaporation source having an organic compound having a light-emitting property, and a fifth evaporation source having an organic compound having a blocking property, A sixth evaporation source having an electron transporting organic compound is provided.

In the present embodiment, copper phthalocyanine (hereinafter referred to as Cu-Pc) was used as the hole-injecting organic compound provided in the first evaporation source, and the hole-transporting organic compound provided in the second evaporation source was used. 4,4′-bis [N
-(1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD), an organic compound serving as a host provided in a third evaporation source (hereinafter referred to as a host material)
4,4′-dicarbazole-biphenyl (hereinafter referred to as CBP), and 2,3,7,8,12,13,17,17 as luminescent organic compounds provided in the fourth evaporation source
18-octaethyl-21H, 23H-porphyrin-
Platinum (hereinafter, referred to as PtOEP), a blocking organic compound provided in the fifth evaporation source, bathocuproin (hereinafter, referred to as BCP), and an electron-transporting organic compound provided in the sixth evaporation source, tris (8 - quinolinolato) aluminum (hereinafter, referred to as Alq ₃₎ is used.

By depositing these organic compounds in order, an organic compound film comprising a region having the functions of hole injection, hole transport, luminescence, blocking and electron transport on the anode. Can be formed.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, the interface between the hole-injecting region and the hole-transporting region, the interface between the hole-transporting region and the hole-transporting region including the light-emitting region, and the hole-transporting region including the light-emitting region and the blocking region. , A mixed region is formed at the interface between the blocking region and the interface between the electron transporting region.

More specifically, after forming Cu-Pc to a thickness of 15 nm to form a first functional region, Cu-Pc and α-NPD are simultaneously evaporated to form a 5-10 nm film.
Forming a first mixed region with a film thickness of 40 n
m to form a second functional area, α-NP
D and CBP are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm.
The third functional region is formed by forming a film having a thickness of 0 nm. The third functional region is formed by simultaneously depositing CBP and PtOEP during the entire period of forming the third functional region or for a predetermined period. A third mixed region is formed in the entire region or a part thereof. The third mixed region is formed with a thickness of 5 to 40 nm. Here, the third mixed region has a light emitting property. Next, a fourth mixed region is formed by simultaneously depositing CBP and BCP with a thickness of 5 to 10 nm, and then a fourth functional region is formed by depositing BCP with a thickness of 8 nm. . Further, a fifth mixed region with a film thickness of 5~10nm by depositing BCP and Alq ₃ simultaneously. Finally, the fifth functional region can be formed by forming Alq ₃ to a thickness of 25 nm, and thus, a first organic compound film is formed.

Here, a case has been described in which six types of organic compounds having different functions are provided in each of the six evaporation sources as the first organic compound film, and these are deposited to form an organic compound film. The present invention is not limited to this, but may be any plural types. The number of organic compounds provided in one evaporation source does not necessarily need to be one, but may be plural. For example, in addition to one type of material provided as a luminescent organic compound in the evaporation source,
Another organic compound which can be a dopant may be provided together. Note that a known material may be used as an organic compound having these multiple functions and forming an organic compound film which emits red light.

It is preferable that the evaporation source is controlled by a microcomputer so that the film formation rate can be controlled.
In addition, it is preferable that the mixing ratio can be controlled when a plurality of organic compounds are formed at the same time.

Next, what is indicated by 706 is an alignment chamber. Here, alignment of the metal mask and placement of the substrate on the metal mask are performed for film formation in the film formation chamber to be transported next, and this is called an alignment chamber (B) 706. For the alignment method here,
This may be performed by the method described with reference to FIG. Note that the alignment chamber (B) 706 includes an exhaust system 700d. Also,
The film forming chamber (A) 703 is hermetically shut off by a gate (not shown). Further, similarly to the alignment chamber (A) 702, there is provided a preliminary cleaning chamber 713c which is hermetically closed by a gate (not shown).

Next, reference numeral 707 denotes a film forming chamber for forming a second organic compound film by a vapor deposition method, which is called a film forming chamber (B). The film formation chamber (B) 707 includes an exhaust system 700e. The alignment chamber (B) 706 is hermetically closed by a gate (not shown). Further, a film forming chamber (A) 70
3, a cleaning preliminary chamber 713d hermetically closed by a gate (not shown) is provided.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (B) 707, and a second organic compound film which emits green light is formed. As the evaporation source, a first evaporation source provided with a hole-injecting organic compound, a second evaporation source provided with a hole-transporting organic compound, and a third evaporation source provided with a hole-transporting organic compound. A fourth evaporation source comprising a host material of
A fifth evaporation source including a light-emitting organic compound, a sixth evaporation source including an organic compound having a blocking property, and a seventh evaporation source including an electron-transporting organic compound are provided. .

In this embodiment, as the hole-injecting organic compound provided for the first evaporation source, Cu—Pc,
As a hole transporting organic compound provided for the second evaporation source,
MTDATA, α-NPD as a hole transporting organic compound provided in a third evaporation source, CBP as a hole transporting host material provided in a fourth evaporation source, and a luminescent organic compound provided in a fifth evaporation source Tris (2-phenylpyridine) iridium (Ir (ppy) ₃ ) as a compound, BCP as a blocking organic compound provided in a sixth evaporation source,
As an electron transporting organic compound provided for the seventh evaporation source,
Alq ₃ is used.

[0127] By sequentially depositing these organic compounds, the second layer composed of a region having the functions of hole injection, hole transport, luminescence, blocking and electron transport is formed on the anode. Can be formed.

In this embodiment, a mixed region is formed at the interface between different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, the interface between the hole injection layer and the hole transport layer, the interface between the hole transport region including the hole transport region and the light emitting region, and the interface between the hole transport region including the light emitting region and the blocking region. A mixed region is formed at the interface between the blocking region and the electron transporting region.

More specifically, after forming Cu-Pc to a thickness of 10 nm to form a first functional region, Cu-Pc and MTDATA are simultaneously evaporated to form 5 to 10 n.
The first mixed region is formed with a thickness of m.
A second functional region is formed by forming a film having a thickness of
TDATA and α-NPD are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm, and α-N
PD is deposited to a thickness of 10 nm to form a third functional region, and α-NPD and CBP are simultaneously deposited to form a third mixed region with a thickness of 5 to 10 nm.
P is deposited to a thickness of 20 to 40 nm to form a fourth functional region, and CBP and (Ir (ppy) ₃ ) are formed during the entire period of forming the fourth functional region or during a certain period. By performing vapor deposition at the same time, a fourth mixed region is formed on the whole or a part of the fourth functional region. The fourth mixed area is 5
It is formed with a thickness of 40 nm. Here, the fourth mixed region has a light emitting property. Next, after forming a fifth mixed region with a thickness of 5 to 10 nm by simultaneously depositing CBP and BCP, a fifth functional region is formed by forming a film of BCP with a thickness of 10 nm. . further,
5-10 by depositing BCP and Alq ₃ simultaneously
A sixth mixed region is formed with a thickness of nm. Finally Alq
By forming ₃ with a thickness of 40 nm, the sixth functional region can be formed, and thus, the second organic compound film is formed.

Here, a case has been described where an organic compound having different functions is provided in each of the seven evaporation sources as the second organic compound film, and these are vapor-deposited to form an organic compound film. Is not limited to this, and may be plural. Note that a known material may be used as the organic compound that forms the organic compound film that has these multiple functions and emits green light.

It is preferable that the evaporation source be controlled by a microcomputer so that the film formation rate can be controlled.
In addition, it is preferable that the mixing ratio can be controlled when a plurality of organic compounds are formed at the same time.

Next, what is indicated by 708 is an alignment chamber. Here, alignment of the metal mask and placement of the substrate on the metal mask are performed for film formation in the film formation chamber to be transported next, and this is called an alignment chamber (C) 708. For the alignment method here,
This may be performed by the method described with reference to FIG. The alignment chamber (C) 708 has an exhaust system 700f. Also,
The film formation chamber (B) 707 is hermetically shut off by a gate (not shown). Further, similarly to the alignment chamber (A) 702, there is provided a cleaning preliminary chamber 713e which is hermetically closed by a gate (not shown).

Next, reference numeral 709 denotes a film forming chamber for forming a third organic compound film by a vapor deposition method, which is called a film forming chamber (C). The film formation chamber (C) 709 has an exhaust system 700 g. The alignment chamber (C) 708 is hermetically shut off by a gate (not shown). Further, a film forming chamber (A) 70
3, a cleaning spare chamber 713f hermetically closed by a gate (not shown) is provided.

In this embodiment, a film formation chamber having the structure shown in FIG. 2 is provided as the film formation chamber (C) 709, and a third organic compound film which emits blue light is formed. Further, as the evaporation source, a first evaporation source having an organic compound having a hole injecting property, a second evaporation source having an organic compound having a light emitting property, and a second evaporation source having an organic compound having a blocking property. Three evaporation sources and a fourth evaporation source including an electron transporting organic compound are provided.

In this embodiment, as the hole-injecting organic compound provided for the first evaporation source, Cu—Pc,
As a luminescent organic compound provided for the second evaporation source, α-
BCP is used as NPD, a blocking organic compound provided for the third evaporation source, and Alq ₃ is used as an electron transporting organic compound provided for the fourth evaporation source.

By vapor-depositing these organic compounds in order, a third organic compound film composed of regions having functions of hole injection, light emission, blocking and electron transport is formed on the anode. can do.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole injection region and the light emitting region, the interface between the light emitting region and the blocking region, and the interface between the blocking region and the electron transporting region.

More specifically, after forming Cu-Pc to a thickness of 20 nm to form a first functional region, Cu-Pc and α-NPD are simultaneously evaporated to form a 5-10 nm film.
Forming a first mixed region with a film thickness of 40 n
m to form a second functional area, α-NP
D and BCP are simultaneously deposited to form a second mixed region with a thickness of 5 to 10 nm, BCP is formed to a thickness of 10 nm to form a third functional region, and BCP and Alq
By simultaneously depositing ₃ to form a third mixed region with a thickness of ₅ to 10 nm, and finally forming Alq3 with a thickness of 40 nm, it is possible to form a fourth functional region, Thus, a third organic compound film is formed.

Here, a case has been described in which four types of organic compounds having different functions are provided in four evaporation sources as the third organic compound film, and these are sequentially vapor-deposited to form an organic compound film. However, the present invention is not limited to this, and may be any plural number. The number of organic compounds provided in one evaporation source does not necessarily need to be one, but may be plural. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that a known material may be used as an organic compound having these multiple functions and forming an organic compound film which emits blue light.

It is preferable that the evaporation source is controlled by a microcomputer so that the film formation speed can be controlled.
In addition, it is preferable that the mixing ratio can be controlled when a plurality of organic compounds are formed at the same time.

In this embodiment, an organic compound film which emits red light is formed in the film formation chamber (A) 703 which is the first film formation chamber, and the film formation is performed in the second film formation chamber. A case where an organic compound film which emits green light is formed in the chamber (B) 707 and an organic compound film which emits blue light is formed in the film formation chamber (C) 709 which is the third film formation chamber will be described. However, the order of formation is not limited to this, and the film formation chamber (A) 703, the film formation chamber (B) 707,
In the film formation chamber (C) 710, any of an organic compound film which emits red light, an organic compound film which emits green light, and an organic compound film which emits blue light may be formed. Further, another film formation chamber may be provided to form an organic compound film which emits white light.

Next, reference numeral 710 denotes a film forming chamber for forming a conductive film (a metal film serving as a cathode in this embodiment) serving as an anode or a cathode of the light emitting element by a vapor deposition method.
Call. The film formation chamber (D) 710 includes an exhaust system 700h. The film forming chamber (C) 709 is hermetically shut off by a gate (not shown). Further, similarly to the film forming chamber (A) 703, a cleaning auxiliary chamber 713g hermetically closed and shut off by a gate (not shown) is provided.

In this embodiment, in the film formation chamber (D) 710, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film serving as a cathode of a light emitting element by a vapor deposition method. Note that it is also possible to co-evaporate an element belonging to Group 1 or 2 of the periodic table and aluminum.

In addition, the film forming chamber (A) 703 and the film forming chamber (B)
Each of the deposition chambers 707, 709, and 710 is provided with a mechanism for heating the deposition chamber. Thus, part of impurities in the deposition chamber can be removed.

Further, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used as an exhaust pump provided in these film forming chambers. In this embodiment, a cryopump is used. It is desirable to use both a dry pump and a dry pump.

The film forming chamber (A) 703 and the film forming chamber (B)
707, a film forming chamber (C) 709 and a film forming chamber (D) 710
Is reduced in pressure by an exhaust pump. Incidentally, it is desirable this time the ultimate vacuum is 10 ^-6 Pa or more, for example, the exhaust speed using a cryopump of _{10000l / s (H 2 O)} , the surface area of the film forming chamber unit with 10 m ² At one time, the leak rate was 4.1 × 10 ⁻⁷ Pa ·
It is desirable to form the inside of the film formation chamber using a material such as aluminum which is not more than m ³ · s ⁻¹ , and in order to obtain such a degree of vacuum, the inside of the film formation chamber is reduced in surface area by electrolytic polishing. It is effective to do.

Further, a CVD chamber may be provided here, and an insulating film such as a silicon nitride film, a silicon oxide film and a DLC film may be formed as a protective film (passivation film) of the light emitting element.
Note that in the case where a CVD chamber is provided, it is preferable to provide a gas purifier for purifying material gas used in the CVD chamber in advance.

Next, reference numeral 711 denotes a sealing chamber, and the exhaust system 70
0i. The film forming chamber (D) 710 is hermetically shut off by a gate (not shown). The sealing chamber 71
Reference numeral 1 denotes a vacuum state. When a plurality of substrates having light emitting elements formed up to the cathode are conveyed to the sealing chamber, the gate is closed and the sealing chamber 711 is filled with an inert gas (nitrogen, helium, argon, etc.). Then, a process for finally sealing the light emitting element in the closed space is performed by using the air pressure condition. Note that a transfer mechanism (not shown) is provided in the sealing chamber 711, and the substrate is unloaded from the film formation chamber (D) 710.
The sealing treatment here is a treatment for protecting the formed light emitting element from oxygen and moisture, and is a method of mechanically encapsulating with a cover material, or encapsulating with a thermosetting resin or an ultraviolet curable resin. Is used.

A cover material is provided in advance in the sealing chamber. Glass, ceramics, plastic or metal can be used as the cover material. Must be translucent. Further, the cover material and the substrate on which the light emitting element is formed are attached to each other using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a closed space. To form It is also effective to provide a moisture absorbent typified by barium oxide in this closed space. The bonding of the substrate on which the light emitting elements are formed and the cover material is performed after the positioning is performed by a positioning mechanism connected to a CCD camera. Further, a mechanism for automatically processing the application of the sealant and the addition of the moisture absorbent is also provided.

It is also possible to fill the space between the cover material and the substrate on which the light emitting element is formed with a thermosetting resin or an ultraviolet curable resin. In this case, it is effective to add a hygroscopic material typified by barium oxide to the thermosetting resin or the ultraviolet curable resin.

In the film forming apparatus shown in FIG.
Is provided with a mechanism for irradiating ultraviolet light (hereinafter, referred to as an ultraviolet light irradiation mechanism), and the ultraviolet light emitted from the ultraviolet light irradiation mechanism cures the ultraviolet curable resin. .

Finally, reference numeral 712 denotes an unload chamber, which has an exhaust system 700j. The substrate on which the light emitting element is formed is taken out from here.

FIGS. 8A and 8B show a case where a function capable of exchanging an organic compound is provided in the film formation chamber of the film formation apparatus shown in this embodiment. FIG. 8 (C) shows the detailed structure of.

In FIG. 8A, a film forming chamber 801 contains:
A substrate 802 is provided. An organic compound for forming an organic compound film on the substrate is provided in the evaporation source 803. Here, the evaporation source 803 is connected to the gate 8
It is provided in a material exchange chamber 804 which is separated from a film formation chamber 801 in which a substrate is provided via the substrate 05. Accordingly, in this embodiment, the material exchange chamber 804 is separated from the film formation chamber 801 by closing the gate 805, and the inside of the material exchange chamber 804 in a vacuum state is returned to the atmospheric pressure by the exhaust system 806. By drawing out as shown in FIG. 8A, an organic compound provided in the evaporation source of the material exchange chamber 804 can be added or exchanged.

When the addition or replacement of the organic compound is completed, the material exchange chamber 804 is returned to the original state as shown in FIG. After the pressure state, the gate 80
By opening 5, the evaporation from the evaporation source 803 to the substrate 802 becomes possible.

Note that the material exchange chamber 804 is provided with a heater for heating the exchanged material. By heating the material in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less.

Further, as shown in FIG.
1 is provided with a plurality of processing mechanisms. First, a plurality of cover materials used for sealing are provided at the stock position 811. Further, a substrate for performing the sealing process is transferred from the film formation chamber (D) 710 by the transfer mechanism (A) 812 and temporarily stored in the storage location 813.

When a certain amount of the substrate is stored in the storage place 813, the sealed chamber is made into a closed space by a gate, and is then brought into an atmospheric pressure state with an inert gas (nitrogen, argon, helium, etc.).

[0159] When the sealing chamber is in the atmospheric pressure state,
Substrates are processed one by one. First, the transport mechanism (A) 81
The substrate is transported from the storage position 813 to the alignment mechanism 814 by 2. At this time, a sealant and a hygroscopic agent are provided on the substrate, and the cover material is transported from the stock position 811 to the alignment mechanism 814 by the transport mechanism (B) 815, and is bonded to the substrate.

Next, the substrate is sealed by irradiating ultraviolet rays from an ultraviolet irradiation mechanism (not shown). When the sealing of the substrate is completed, the transfer mechanism (C) 816
It is transported to the unloading chamber 712 and is taken out.

As described above, by using the film forming apparatus shown in FIG. 7 (or FIG. 8), it is not necessary to expose the light emitting element to the outside air until the light emitting element is completely sealed in the closed space. Can be manufactured.

[Embodiment 2] A film forming apparatus of the present invention will be described with reference to FIG. In FIG. 9, reference numeral 901 denotes a transfer chamber. The transfer chamber 901 is provided with a transfer mechanism (A) 902, and transfers the substrate 903. The transfer chamber 901 is in a reduced pressure atmosphere, and is connected to each processing chamber by a gate. The transfer of the substrate to each processing chamber is performed by the transfer mechanism (A) 902 when the gate is opened. To reduce the pressure in the transfer chamber 901, an exhaust pump such as a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), or a cryopump can be used. It is preferable to use a cryopump in combination with a dry pump.

Hereinafter, each processing chamber will be described.
Since the transfer chamber 901 has a reduced pressure atmosphere, the transfer chamber 9
All of the processing chambers directly connected to 01 are provided with exhaust pumps (not shown). As the exhaust pump, the above-described dry pump, mechanical booster pump, turbo molecular pump (magnetic levitation type), or cryopump is used. Here, it is preferable to use the cryopump in combination with the dry pump.

First, reference numeral 904 denotes a load chamber for setting (installing) a substrate. Load room 904 is gate 9
00a, the substrate 90 is connected to the transfer chamber 901.
A carrier (not shown) in which 3 is set is arranged. Note that the load chamber 904 also functions as a transfer chamber for transferring the substrate completed up to element formation to the sealing chamber. The load room 904
The room may be distinguished between for carrying in the substrate and for transporting the substrate. The load chamber 904 includes the above-described exhaust pump and a purge line for introducing high-purity nitrogen gas or rare gas. Note that a cryopump is desirable as the exhaust pump. Further, the purge line is provided with a gas purifier so that impurities (oxygen and water) of the gas introduced into the apparatus are removed in advance.

[0165] In this embodiment, as the substrate 903, a substrate on which a transparent conductive film serving as an anode of a light-emitting element is formed is used. In this embodiment, the substrate 903 is set on a carrier with the surface on which the film is to be formed facing downward. This is to make it easier to perform a face-down method (also referred to as a deposit-up method) when forming a film by a vapor deposition method later. The face-down method refers to a method in which a film is formed in a state where a film formation surface of a substrate faces downward. According to this method, adhesion of dust and the like can be suppressed.

Next, reference numeral 905 denotes an alignment chamber for aligning the metal mask and aligning the metal mask with the substrate formed up to the anode or the cathode (the anode in this embodiment) of the light emitting element. 905 is connected to the transfer chamber 901 by a gate 900b. Each time a different organic compound film is formed, alignment of the metal mask and alignment of the metal mask with the substrate are performed in the alignment chamber. In addition, by providing a CCD (Charge Coupled Device) known as an image sensor in the alignment chamber 905, the substrate and the metal mask can be accurately positioned when film formation is performed using the metal mask. Make it possible. For the metal mask alignment method,
FIG. 4 may be used.

Further, a preliminary cleaning chamber 922a is connected to the alignment chamber 905. The configuration of the cleaning preliminary chamber 922a is as shown in FIG. 9B. First, there is a μ-wave oscillator 931 for generating a μ-wave,
The microwave generated here is sent to the plasma discharge tube 933 through the waveguide 932. Note that the microwave oscillator 931 used here emits a microwave of about 2.45 GHz.
In addition, a reactive gas is supplied to the plasma discharge tube 933 from a gas introduction tube 934. Here, NF ₃ is used as the reactive gas. However, another reactive gas such as CF ₄ or ClF ₃ may be used.

In the plasma discharge tube 933, the reactive gas is decomposed by the microwave to generate radicals.
The radical passes through a gas introduction pipe 934 and is introduced into an alignment chamber 905 connected via a gate (not shown). Note that a reflector 935 is preferably provided in the plasma discharge tube 933 in order to efficiently supply microwaves.

The alignment chamber 905 is provided with a metal mask to which an organic compound film has adhered. Then, the cleaning preliminary chamber 922a and the alignment chamber 90
By opening a gate (not shown) provided between the alignment chambers 5, radicals can be introduced into the alignment chamber 905. Thereby, cleaning of the metal mask can be performed.

[0170] By using the microwave plasma, the reactive gas can be radicalized with high efficiency, so that the probability of generation of impurities such as by-products is low. Further, since the mechanism is different from that of normal radical generation, generated radicals are not accelerated, and furthermore, radicals are not generated inside the film formation chamber, thereby preventing damage to the inside of the film formation chamber and the metal mask due to plasma. be able to.

It is to be noted that cleaning the alignment chamber using such a method is one of preferred modes, and is not limited to this method. Therefore, dry cleaning may be performed by introducing a reactive gas into the film formation chamber and generating plasma in the film formation chamber, or may be performed by sputtering by introducing Ar gas or the like. good.

Next, reference numeral 906 denotes a film forming chamber for forming an organic compound film by a vapor deposition method, which is called a film forming chamber (A).
The film forming chamber (A) 906 is connected to the transfer chamber 9 via the gate 900c.
01. In this embodiment, a film formation chamber having the structure shown in FIG.

In this embodiment, a first organic compound film which emits red light is formed in a film forming section 907 in the film forming chamber (A) 906. A plurality of evaporation sources are provided in the film formation chamber (A) 906. Specifically, a first evaporation source having an organic compound having a hole-injecting property and an organic compound having a hole-transporting property are provided. A second evaporation source, a third evaporation source including a hole-transporting organic compound serving as a host of an organic compound having a light-emitting property, and a fourth evaporation source including an organic compound having a light-emitting property And a fifth evaporation source having an organic compound having a blocking property and a sixth evaporation source having an organic compound having an electron transporting property.

[0174] By sequentially depositing these organic compounds, an organic compound film comprising regions having functions of hole injection, hole transport, luminescence, blocking and electron transport on the anode. Can be formed.

In this embodiment, a mixed region is formed at the interface between different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, the interface between the hole-injecting region and the hole-transporting region, the interface between the hole-transporting region and the hole-transporting region including the light-emitting region, and the hole-transporting region including the light-emitting region and the blocking region. , A mixed region is formed at the interface between the blocking region and the interface between the electron transporting region.

Here, a case has been described where six different organic compounds are provided in six evaporation sources as the first organic compound film, and these are sequentially vapor-deposited to form an organic compound film. The present invention is not limited to this, but may be any plurality. Further, one kind of organic compound is not necessarily required to be provided in one evaporation source, and a plurality of kinds may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that as the organic compound which has these multiple functions and forms an organic compound film which emits red light, the organic compound shown in Example 1 can be used, but known materials can be freely used in combination. Is also good.

The film forming chamber (A) 906 has a gate 900.
g to the material exchange chamber 914. Note that the material exchange chamber 914 is provided with a heater that heats the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. In addition, since the material exchange chamber 914 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 914 is reduced after adding or exchanging an organic compound from the outside and performing heat treatment. Then, when the same pressure state as in the film formation chamber is reached, the gate 900g is opened, so that the organic compound can be provided in the evaporation source inside the film formation chamber. In addition,
The organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

For the film forming process in the film forming chamber (A) 906, the description of FIG. 2 may be referred to.

Note that a cleaning preparatory chamber 922b is also connected to the film forming chamber (A) 906 via a gate (not shown), like the alignment chamber 905. The specific configuration is the same as that of the cleaning preliminary chamber 922a.
The radicals generated in the cleaning preliminary chamber 922b are introduced into the film formation chamber (A) 906, so that the film formation chamber (A)
Organic compounds and the like attached to the inside of the 906 can be removed.

Next, reference numeral 908 denotes a film forming chamber for forming a second organic compound film by a vapor deposition method, which is called a film forming chamber (B). The film formation chamber (B) 908 is connected to the transfer chamber 901 via a gate 900d. In this embodiment, the film forming chamber (B) 9
As 08, a film formation chamber having the structure shown in FIG. 2 is provided. In this embodiment, an organic compound film which emits green light is formed in a film formation section 909 in the film formation chamber (B) 908.

A plurality of evaporation sources are provided in the film formation chamber (B) 908. Specifically, a first evaporation source provided with a hole-injecting organic compound and a hole-transporting organic compound are provided. A second evaporation source and a third evaporation source with an organic compound, a fourth evaporation source with a hole-transporting host material, a fifth evaporation source with a luminescent organic compound, and blocking A sixth evaporation source including an organic compound having a property and a seventh evaporation source including an organic compound having an electron transporting property are provided.

By sequentially evaporating these organic compounds, the second layer composed of the regions having the functions of hole injection, hole transport, light emission, blocking and electron transport is formed on the anode. Can be formed.

In this embodiment, a mixed region is formed at the interface between the different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, the interface between the hole-injecting region and the hole-transporting region, the interface between the hole-transporting region and the hole-transporting region including the light-emitting region, the hole-transporting region including the light-emitting region, and the blocking region. , And a mixed region is formed at the interface between the blocking region and the electron transporting region.

Here, as the second organic compound film, the case where seven kinds of organic compounds are provided in each of the seven evaporation sources and these are sequentially vapor-deposited to form an organic compound film has been described. The invention is not limited to this, but may be any plural. Further, the organic compound provided in one evaporation source is not necessarily required to be one kind,
A plurality of types may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. As the organic compound having these multiple functions and forming an organic compound film which emits green light, the organic compound shown in Embodiment 1 may be used, but any known material may be freely used in combination. Can also.

The film formation chamber (B) 908 has a gate 900
h, it is connected to the material exchange chamber 915. Note that the material exchange chamber 915 is provided with a heater that heats the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. Further, since the material exchange chamber 915 is provided with an exhaust pump capable of reducing the pressure in the inside, an organic compound is introduced from the outside, heat treatment is performed, and then the pressure in the inside is reduced. Then, when the same pressure state as in the film formation chamber is reached, the gate 900h is opened, so that an organic compound can be provided in the evaporation source inside the film formation chamber. Note that the organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

For the film forming process in the film forming chamber (B) 908, the description of FIG. 2 may be referred to.

Note that a cleaning preparatory chamber 922c is also connected to the film forming chamber (B) 908 via a gate (not shown), like the alignment chamber 905. The specific configuration is the same as that of the cleaning preliminary chamber 922a.
By introducing the radicals generated in the cleaning preliminary chamber 922c into the film formation chamber (B) 908, the film formation chamber (B)
Organic compounds or the like attached to the inside of the 908 can be removed.

Next, reference numeral 910 denotes a film forming chamber for forming a third organic compound film by a vapor deposition method, which is called a film forming chamber (C). The film formation chamber (C) 910 is connected to the transfer chamber 901 via a gate 900e. In this embodiment, the film forming chamber (C) 9
As 10, a film forming chamber having the structure shown in FIG. 2 is provided. In this embodiment, an organic compound film which emits blue light is formed in a film formation section 911 in a film formation chamber (C) 910.

A plurality of evaporation sources are provided in the film forming chamber (C) 910. Specifically, a first evaporation source having a hole-injecting organic compound and an organic light-emitting organic compound are provided. A second evaporation source having a compound, a third evaporation source having a blocking organic compound, and a fourth evaporation source having an electron transporting organic compound are provided.

It is to be noted that by sequentially depositing these organic compounds, it is possible to form an organic compound film comprising a region having functions of hole injection, light emission, blocking and electron transport on the anode. it can.

In the present embodiment, a mixed region is formed at the interface between different functional regions by simultaneously depositing the organic compounds forming both functional regions. That is, mixed regions are formed at the interface between the hole injection region and the light emitting region, the interface between the light emitting region and the blocking region, and the interface between the blocking region and the electron transporting region.

Here, a case has been described in which four types of organic compounds having different functions are provided in four evaporation sources as the third organic compound film, and these are sequentially vapor-deposited to form an organic compound film. However, the present invention is not limited to this, and may be any plural number. Further, one kind of organic compound is not necessarily required to be provided in one evaporation source, and a plurality of kinds may be used. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source, another organic compound which can be a dopant may be provided together. Note that as the organic compound which has these multiple functions and forms an organic compound film which emits blue light, the organic compound shown in Example 1 can be used, but known materials can be freely used in combination. Can also

The film forming chamber (C) 910 has a gate 900.
It is connected to the material exchange chamber 916 via i. Note that the material exchange chamber 916 is provided with a heater for heating the exchanged organic compound. By heating the organic compound in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. Further, since the material exchange chamber 916 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 916 is reduced in pressure after an organic compound is introduced from outside and subjected to heat treatment. Then, when the pressure becomes the same as that in the film formation chamber, the gate 900i is opened, so that the organic compound can be provided in the evaporation source inside the film formation chamber. Note that the organic compound is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

For the film forming process in the film forming chamber (C) 910, the description of FIG. 2 may be referred to.

Note that a cleaning preparatory chamber 922d is also connected to the film forming chamber (C) 910 via a gate (not shown), like the alignment chamber 905. The specific configuration is the same as that of the cleaning preliminary chamber 922a.
The radicals generated in the cleaning preparatory chamber 922d are introduced into the film forming chamber (C) 910, thereby forming the film forming chamber (C).
Organic compounds or the like attached to the inside of the 910 can be removed.

Next, reference numeral 912 denotes a film forming chamber for forming a conductive film (a metal film serving as a cathode in this embodiment) serving as an anode or a cathode of the light emitting element by a vapor deposition method.
Call. The film formation chamber (D) 912 is connected to the transfer chamber 901 via the gate 900f. In this embodiment, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film serving as a cathode of a light-emitting element in a film formation portion 913 in a film formation chamber (D) 912. In addition, 1 of the periodic table
It is also possible to co-evaporate an element belonging to Group 2 or Group 2 with aluminum. Co-evaporation refers to an evaporation method in which an evaporation source is simultaneously heated and different substances are mixed in a film formation stage.

The film forming chamber (D) 912 has a gate 900
It is connected to the material exchange chamber 917 via j. Note that the material exchange chamber 917 is provided with a heater for heating the exchanged conductive material. By heating the conductive material in advance, impurities such as water can be removed. The temperature added at this time is desirably 200 ° C. or less. In addition, since the material exchange chamber 917 is provided with an exhaust pump capable of reducing the pressure inside, the inside of the material exchange chamber 917 is reduced pressure after introducing a conductive material from the outside. Then, when the same pressure state as in the film formation chamber is reached, the gate 900j is opened, so that the evaporation source in the film formation chamber can be provided with a conductive material.

Note that a cleaning preparatory chamber 922e is also connected to the film forming chamber (D) 912 via a gate (not shown), like the alignment chamber 905. The specific configuration is the same as that of the cleaning preliminary chamber 922a.
The radicals generated in the cleaning preparatory chamber 922 e are introduced into the film forming chamber (D) 912, thereby forming the film forming chamber (D).
The conductive material or the like attached to the inside of the 912 can be removed.

The film forming chamber (A) 906 and the film forming chamber (B)
Each of the deposition chambers 908, 910, and 912 is provided with a mechanism for heating the deposition chamber. Thus, impurities such as moisture in the deposition chamber can be removed.

Further, as an exhaust pump provided in these film forming chambers, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used. In this embodiment, a cryopump is used. It is desirable to use a dry pump.

Further, the film forming chamber (A) 906 and the film forming chamber (B)
908, a film formation chamber (C) 910 and a film formation chamber (D) 912
Is reduced in pressure by an exhaust pump. Note that the ultimate vacuum degree at this time is desirably 10 ⁻⁶ Pa or more. For example, the surface area of the inside of the film formation chamber is 1.5 m using a cryopump with an evacuation speed of 36000 l / s (H ₂ O). ^{When 2} , the leak rate is 9.3 × 10 ⁻⁷ Pa · m ³ ·
It is desirable to form the inside of the film formation chamber using a material such as 18-8 stainless steel having a ^{value of} s ^-1 or less. In order to obtain such a degree of vacuum, it is effective to reduce the surface area of the inside of the film formation chamber by electropolishing because the adsorbability of impurities such as oxygen and water can be reduced.

In addition, a material such as aluminum which has been subjected to electrolytic polishing to a mirror surface may be used for the inner wall surface.
An internal member made of a material such as ceramics that has been treated so as to minimize pores is used. Note that these materials have surface smoothness such that the average surface roughness is 5 nm or less (preferably 3 nm or less). Here, the average surface roughness refers to a three-dimensional extension of the center line average roughness defined in JIS B0601 so that it can be applied to the surface.

In addition, there is a method of forming an active surface on the inner wall of the film forming chamber by using a material which easily reacts with a gas.
Materials in this case include Ti, Zr, Nb, Ta, C
r, Mo, W, La, Ba, or the like may be used.

Next, reference numeral 918 denotes a sealing chamber (also referred to as a sealing chamber or a glove box), which is connected to the load chamber 904 via a gate 900k. In the sealing chamber 918, a process for finally sealing the light emitting element in the closed space is performed. This process is a process for protecting the formed light-emitting element from oxygen and moisture, and uses a method of mechanically encapsulating with a cover material or encapsulating with a thermosetting resin or an ultraviolet light curable resin.

As the cover material, glass, ceramics, plastic or metal can be used, but when light is emitted to the cover material side, it must be translucent. Further, the cover material and the substrate on which the light emitting element is formed are attached to each other using a sealant such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a closed space. To form It is also effective to provide a moisture absorbent typified by barium oxide in this closed space.

Further, the space between the cover material and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a hygroscopic material represented by barium oxide to the thermosetting resin or the ultraviolet curable resin.

In the film forming apparatus shown in FIG.
A mechanism 919 for irradiating ultraviolet light (hereinafter referred to as an ultraviolet light irradiating mechanism) is provided inside, and the ultraviolet curable resin is cured by the ultraviolet light emitted from this ultraviolet light irradiating mechanism 919. ing. Also, the sealing chamber 918
It is also possible to reduce the pressure inside by installing an exhaust pump. When the encapsulation step is performed mechanically by a robot operation, mixing under oxygen or moisture can be prevented by performing the operation under reduced pressure. Note that, specifically, it is desirable that the concentration of oxygen or water be 0.3 ppm or less. Conversely, the inside of the sealing chamber 918 can be pressurized. In this case, pressurization is performed while purging with a high-purity nitrogen gas or a rare gas to prevent entry of oxygen or the like from outside air.

Next, a delivery room (pass box) 920 is connected to the sealing room 918. The transfer chamber 920 is provided with a transfer mechanism (B) 921, and transfers the substrate in which the light emitting element is completely sealed in the sealing chamber 918 to the transfer chamber 920. The delivery chamber 920 can also be reduced in pressure by attaching an exhaust pump. The delivery chamber 920 is a facility for preventing the sealing chamber 918 from being directly exposed to the outside air, and takes out the substrate therefrom. In addition, a member supply chamber (not shown) for supplying a member used in the sealing chamber can be provided.

Although not shown in this embodiment, a compound containing silicon such as silicon nitride or silicon oxide after the formation of the light emitting element or a DLC containing carbon on these compounds is formed.
An insulating film in which (Diamond Like Carbon) films are stacked may be formed on the light emitting element. DLC (Diamond Li
The “ke Carbon” film is an amorphous film in which a diamond bond (sp ³ bond) and a graphite bond (SP ² bond) are mixed. In this case, a plasma is generated by applying a self-bias, and a thin film is formed by plasma discharge decomposition of a raw material gas.
n) What is necessary is just to provide the film-forming chamber provided with the apparatus.

In addition, CVD (chemical vapor depositio)
n) In a film forming chamber equipped with an apparatus, oxygen (O ₂ ), hydrogen (H ₂ ), methane (CH ₄ ), ammonia (NH ₃ ), and silane (SiH ₄ ) can be used. Also, CVD
The device has parallel plate type electrodes and one RF power source.
A frequency of 3.56 MHz may be used.

[0211] A film formation chamber for forming a film by a sputtering method (or a sputtering method) can be provided. This is because, when an anode is formed after an organic compound film is formed on a cathode of a light emitting element, film formation by sputtering is effective. That is, it is effective when the pixel electrode is a cathode. In addition, the inside of the deposition chamber at the time of deposition is
By setting an atmosphere in which oxygen is added to argon, the oxygen concentration in the formed film can be controlled, and a low-resistance film with high transmittance can be formed. Further, like the other film formation chambers, it is desirable that the film formation chamber be separated from the transfer chamber by a gate.

[0212] In the film formation chamber where sputtering is performed, a mechanism for controlling the temperature of the film formation substrate may be provided.
Note that the film formation substrate is preferably maintained at 20 to 150 ° C. Further, as an exhaust pump provided in the film forming chamber,
Although a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used, a cryopump and a dry pump are preferable in this embodiment.

As described above, by using the film forming apparatus shown in FIG. 9, it is not necessary to expose the light-emitting element to the outside air until the light-emitting element is completely enclosed in a closed space, so that a highly reliable light-emitting device can be manufactured. It becomes possible.

[Embodiment 3] In this embodiment, a film formation apparatus which is different from the in-line type film formation apparatus shown in Embodiment 1 in terms of a substrate transfer method and a structure of a film formation chamber will be described with reference to FIG. .

In FIG. 10, a substrate 1004 put in a load chamber 1000 is transferred to a first alignment unit 1001 connected via a gate (not shown).
The substrate 1004 is aligned by the method described with reference to FIG. 5, and is fixed to the holder 1002 together with the metal mask 1003.

Then, the substrate 1004 is
Is transported to the first film forming unit 1005. Note that the first alignment unit 1001 and the first film forming unit 1005 are connected without using a gate, and have the same space. Therefore, in the present embodiment, the first alignment unit 10
A rail 1012 is provided as a means that can freely move between the first film forming unit 1005 and the first film forming unit 1005, and each process is performed by moving the holder 1002 on the rail 1012. Note that the processing position at the time of alignment and film formation is controlled by a control mechanism of the holder 1002.

Then, in the first film forming unit 1005,
A first organic compound film is formed by being deposited by a plurality of evaporation sources 1006 each provided with a different organic compound. In addition, this moving means is used to form the second organic compound film.
007 and the second film forming unit 1008 are similarly used.

Further, when the third organic compound is formed, it is similarly transported to the third alignment unit 1009 and the third film forming unit 1010.

As described above, in this embodiment, three types of organic compound films can be formed in the same space. The third film formation unit 1010 is connected to the unload chamber 1011 via a gate (not shown), and can take out a substrate after film formation.

The processing method in the alignment unit and the film forming unit in this embodiment may be the same as that described in the alignment room and the film forming room in the first embodiment.

Further, in this embodiment, providing a partition between the alignment section and the film forming section to such an extent that the transfer of the substrate is not hindered is not possible because the organic compound scattered from the evaporation source during the film formation is formed. It is possible to prevent scattering to places other than the film part (the alignment part and other film forming parts).

Also in the film forming apparatus of this embodiment, it is preferable to provide a cleaning preliminary chamber 1013 to clean the film forming chamber and the metal mask.

By forming a plurality of organic compound films in the same space by using the film forming apparatus described above, movement in forming different organic compound films is facilitated.
Processing time can be reduced.

Further, in the film forming apparatus shown in this embodiment, three kinds of organic compounds having a plurality of functions are formed on a substrate on which an anode or a cathode of a light emitting element is formed by continuously performing vapor deposition in a film forming chamber. Can form a membrane,
Further, a film formation chamber for forming a conductive film may be provided so that a cathode or an anode of a light-emitting element can be formed continuously. In addition, as a conductive film, in the case of forming a cathode, aluminum and an element belonging to Group 1 or 2 of the periodic table and aluminum in addition to an Al—Li alloy film (an alloy film of aluminum and lithium) are co-deposited. In the case of forming an anode, indium oxide, tin oxide, zinc oxide, or a compound thereof (ITO or the like) may be used.

[0225] In addition, a processing chamber for sealing the manufactured light-emitting element can be provided.

Further, the film forming apparatus of this embodiment can be provided with the exhaust pump as shown in Embodiment 1 and Embodiment 2. However, in order to keep the pressure in the film forming chamber constant, One or more pumps of the same type and having the same exhaust capacity may be provided. Note that a combination of a dry pump and a cryopump is preferably used.

[Embodiment 4] In this embodiment, a light emitting device manufactured using the film forming apparatus of the present invention will be described. FIG.
1 is a cross-sectional view of an active matrix light emitting device. Although a thin film transistor (hereinafter, referred to as “TFT”) is used as the active element, a MOS transistor may be used.

A top gate type TFT is used as the TFT.
(Specifically, a planar type TFT) is exemplified, but a bottom gate type TFT (typically, an inverted stagger type TFT) can also be used.

In FIG. 11, reference numeral 1101 denotes a substrate;
Here, a substrate that transmits visible light is used. In particular,
A glass substrate, a quartz substrate, a crystallized glass substrate, or a plastic substrate (including a plastic film) may be used. Note that the substrate 1101 includes an insulating film provided on the surface.

On the substrate 1101, a pixel portion 1111 and a driver circuit 1112 are provided. First, the pixel unit 1
111 will be described.

The pixel section 1111 is an area for displaying an image. A plurality of pixels are present on the substrate, and a TFT (hereinafter, referred to as “current control TFT”) 1102 for controlling a current flowing through the light emitting element and a pixel electrode (anode) 1 are provided for each pixel.
103, an organic compound film 1104 and a cathode 1105 are provided. Reference numeral 1113 denotes a TFT (hereinafter, referred to as a TFT) for controlling a voltage applied to the gate of the current control TFT.
"Switching TFT").

Here, the current controlling TFT 1102 is p
It is preferable to use a channel type TFT. Although it is possible to use an n-channel TFT, if a current control TFT is connected to the anode of the light emitting element as shown in FIG.
The channel type TFT can reduce power consumption. However, the switching TFT 1113 may be an n-channel TFT or a p-channel TFT.

A pixel electrode 1103 is electrically connected to a drain of the current controlling TFT 1102. In this embodiment, since a conductive material having a work function of 4.5 to 5.5 eV is used as a material of the pixel electrode 1103, the pixel electrode 1103 functions as an anode of a light-emitting element. As the pixel electrode 1103, typically, indium oxide, tin oxide,
Zinc oxide or a compound thereof (such as ITO) may be used. The organic compound film 11 is formed on the pixel electrode 1103.
04 is provided.

Further, a cathode 1105 is provided on the organic compound film 1104. As a material of the cathode 1105, it is desirable to use a conductive material having a work function of 2.5 to 3.5 eV. Typically, as the cathode 1105,
A conductive film containing an alkali metal element or an alkaline earth metal element, a conductive film containing aluminum, or a film in which aluminum, silver, or the like is stacked over the conductive film may be used.

The pixel electrode 1103, the organic compound film 1
A light emitting element 1114 comprising a cathode 104 and a cathode 1105
Are covered with a protective film 1106. Protective film 1106
Is provided to protect the light emitting element 1114 from oxygen and water. As a material of the protective film 1106, silicon nitride, silicon nitride oxide, aluminum oxide, tantalum oxide, or carbon (specifically, diamond-like carbon) is used.

Next, the drive circuit 1112 will be described. The driver circuit 1112 is an area for controlling the timing of signals (gate signal and data signal) transmitted to the pixel portion 1111, and includes a shift register, a buffer, a latch,
An analog switch (transfer gate) or a level shifter is provided. In FIG. 11, n-channel TFTs 1107 and p
A CMOS circuit including a channel type TFT 1108 is shown.

The circuit configuration of the shift register, buffer, latch, analog switch (transfer gate) or level shifter may be a known one. Although the pixel portion 1111 and the driver circuit 1112 are provided over the same substrate in FIG. 11, an IC or an LSI can be electrically connected without providing the driver circuit 1112.

Also, in FIG. 11, the current controlling TFT 110
2, a pixel electrode (anode) 1103 is electrically connected, but a structure in which a cathode is connected to a current controlling TFT may be employed. In that case, the pixel electrode 1103 is connected to the cathode 11
05, and the cathode is a pixel electrode (anode) 1
What is necessary is just to form with the same material as 103. In that case, the current control TFT is preferably an n-channel TFT.

In this embodiment, a shape having an eave (hereinafter, referred to as an eave structure) including a wiring 1109 and a separation portion 1110 is provided. Wiring 11 as shown in FIG.
09 and the separation part 1110,
The wiring 1109 can be formed by stacking and etching a metal (for example, metal nitride) having a lower etch rate than the metal forming the separation portion 1110. With this shape, the pixel electrode 1103
Or short circuit between the wiring 1109 and the cathode 1105 can be prevented. Note that, in this embodiment, unlike a normal active matrix light emitting device, the cathode 1105 on a pixel is formed in a stripe shape (similar to a passive matrix cathode).

Here, FIG. 12 shows an appearance of the active matrix light emitting device shown in FIG. FIG.
FIG. 12A shows a top view, and FIG.
FIG. 2A is a cross-sectional view taken along line AA ′. Also,
Reference is made to the reference numerals used in FIG.

Reference numeral 1201 shown by a dotted line denotes a source side driving circuit, 1202 denotes a pixel portion, and 1203 denotes a gate side driving circuit. Reference numeral 1204 denotes a cover material, 1205 denotes a sealant, and a space 12 is surrounded by the sealant 1205.
07 is provided.

Note that reference numeral 1208 denotes a source side driving circuit 120.
1 and a wiring for transmitting a signal input to the gate side driving circuit 1203, and an FPC which is an external input terminal.
(Flexible print circuit) 1210 receives a video signal and a clock signal. Note that here, FP
Although only C is shown, a printed wiring board (PWB) may be attached to this FPC. The light-emitting device in this specification includes not only a light-emitting module in which an FPC or PWB is attached to a light-emitting panel but also a light-emitting module in which an IC is mounted.

Next, a cross-sectional structure will be described with reference to FIG. The pixel portion 120 is provided above the substrate 1101.
2. A gate side driver circuit 1203 is formed, and the pixel portion 1202 is formed by a plurality of pixels including a current control TFT 1102 and a pixel electrode 1103 electrically connected to the drain thereof. In addition, the gate side driving circuit 1203
Are n-channel TFT1107 and p-channel TFT1
108 is formed using a CMOS circuit that combines the two.

The pixel electrode 1103 functions as an anode of a light emitting element. Further, an interlayer insulating film 1206 is formed on both ends of the pixel electrode 1103, and an organic compound film 1104 and a cathode 1105 of a light emitting element are formed on the pixel electrode 1103.

The cathode 1105 also functions as a wiring common to a plurality of pixels.
10 is electrically connected. Further, the pixel unit 120
2 and the elements included in the gate side driving circuit 1203 are all covered with the protective film 1106.

Also, the cover material 1 is
204 is pasted. The cover material 1204
A spacer made of a resin film may be provided to secure an interval between the light emitting element and the light emitting element. The inside of the sealant 1205 is a closed space, and is filled with an inert gas such as nitrogen or argon. It is also effective to provide a moisture absorbent typified by barium oxide in this closed space.

As the cover material, glass, ceramics, plastic or metal can be used, but when light is emitted to the cover material side, it must be translucent. In addition, as plastic, FRP
(Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), mylar, polyester or acrylic can be used.

The light emitting element 1114 formed on the substrate as described above is covered with the cover material 1204 and the sealant 1205.
By completely sealing the organic compound layer from the outside, it is possible to completely block the organic compound layer from the outside, and to prevent a substance such as moisture or oxygen, which promotes deterioration of the organic compound layer due to oxidation, from entering from the outside. Therefore, a highly reliable light-emitting device can be obtained.

The light emitting device of this embodiment can form a film by using the film forming apparatus described in Embodiments 1 to 3.

[Embodiment 5] In this embodiment, a passive type (simple matrix type) manufactured by using the film forming apparatus of the present invention.
The light emitting device will be described. FIG. 13 is used for the description. In FIG. 13, reference numeral 1301 denotes a glass substrate, 1302
Is an anode made of a transparent conductive film. In this embodiment, a compound of indium oxide and zinc oxide is formed as a transparent conductive film by an evaporation method. Although not shown in FIG. 13, a plurality of anodes are arranged in stripes in a direction parallel to the paper surface.

The anodes 13 arranged in a stripe pattern
02 so as to intersect with the cathode partition (1303a, 1
303b) are formed. Cathode partition (1303a, 13
03b) is formed in a direction perpendicular to the paper surface.

Next, an organic compound film 1304 is formed. The organic compound film formed here has a plurality of functional regions by combining a plurality of organic compounds having a hole injecting property, a hole transporting property, a light emitting property, a blocking property, an electron transporting property, or an electron injecting property. It is good to form.

In this embodiment, a mixed region is formed between the functional regions. Note that the method described in the embodiment may be used for manufacturing the mixed region.

Since these organic compound films are formed along the grooves formed by the cathode partitions (1303a, 1303b), they are arranged in stripes in a direction perpendicular to the plane of the paper.

Thereafter, the plurality of cathodes 1305 are arranged in a stripe shape so that the longitudinal direction is perpendicular to the plane of the paper and perpendicular to the anode 1302. In this embodiment, the cathode 1305 is made of MgAg, and is formed by an evaporation method. Although not shown, the cathode 1305
The wiring is drawn out to a portion where the FPC will be attached later so that a predetermined voltage is applied. Further, after forming the cathode 1305, a silicon nitride film is provided as the protective film 1306.

[0256] The light emitting element 1311 is formed over the substrate 1301 as described above. In this embodiment, since the lower electrode is a light-transmitting anode, light generated by the organic compound film is emitted to the lower surface (the substrate 1301). However, the structure of the light emitting element 1311 can be reversed, and the lower electrode can be a light-shielding cathode. In that case, light generated by the organic compound film is on the upper surface (the side opposite to the substrate 1301).
Will be radiated.

Next, a ceramic substrate is prepared as a cover material 1307. In the structure of this embodiment, a ceramic substrate was used because the light-shielding property was sufficient. Of course, when the structure of the light-emitting element was reversed as described above, the cover material had better translucency, and was made of plastic or glass. A substrate is preferably used.

The cover material 1307 prepared in this way is bonded with a sealant 1309 made of an ultraviolet curable resin. The space 1308 inside the sealant 1309
Is a closed space and is filled with an inert gas such as nitrogen or argon. It is also effective to provide a moisture absorbent typified by barium oxide in the closed space 1308. Finally, the anisotropic conductive film (F
(PC) 1310 is attached to complete a passive light emitting device. Note that the light emitting device described in this embodiment corresponds to the light emitting device of Embodiment 1.
It can be manufactured using any of the film forming apparatuses described in the third to third embodiments.

[Embodiment 6] Since a light emitting device using a light emitting element is of a self-luminous type, it has better visibility in a bright place and a wider viewing angle than a liquid crystal display device. Therefore, various electric appliances can be completed using the light emitting device of the present invention.

Electric appliances using the light emitting device manufactured according to the present invention include a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook type personal computer. Computers, game consoles, personal digital assistants (mobile computers, mobile phones, portable game consoles, electronic books, etc.),
An image reproducing device provided with a recording medium (specifically, a device provided with a display device capable of reproducing a recording medium such as a digital video disk (DVD) and displaying the image) is provided. In particular, in a portable information terminal in which a screen is often viewed from an oblique direction, since a wide viewing angle is regarded as important, it is preferable to use a light emitting device having a light emitting element. FIG. 14 shows specific examples of these electric appliances.

FIG. 14A shows a display device,
01, a support base 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2003. Since a light-emitting device having a light-emitting element is a self-luminous type, it does not require a backlight and can have a thinner display portion than a liquid crystal display device. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

FIG. 14B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103,
An operation key 2104, an external connection port 2105, a shutter 2106, and the like are included. The display device is manufactured by using the light-emitting device manufactured according to the present invention for the display portion 2102.

FIG. 14C shows a notebook personal computer, which includes a main body 2201, a housing 2202, and a display portion 2.
203, keyboard 2204, external connection port 220
5, including a pointing mouse 2206 and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2203.

FIG. 14D shows a mobile computer, which includes a main body 2301, a display portion 2302, and a switch 230.
3, an operation key 2304, an infrared port 2305, and the like. The light emitting device manufactured according to the present invention was
02.

FIG. 14E shows a portable image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium, and includes a main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, a recording medium ( DVD, etc.) reading unit 240
5, operation keys 2406, a speaker unit 2407, and the like. The display portion A 2403 mainly displays image information, and the display portion B 2404 mainly displays text information.
03, 2404. In addition,
The image reproducing apparatus provided with the recording medium includes a home game machine and the like.

FIG. 14F shows a goggle-type display (head-mounted display).
1, including a display unit 2502 and an arm unit 2503. The light-emitting device manufactured according to the present invention is used for the display portion 2502.

FIG. 14G) shows a video camera,
Reference numeral 601, display unit 2602, housing 2603, external connection port 2604, remote control receiving unit 2605, image receiving unit 260
6, a battery 2607, a voice input unit 2608, operation keys 2609, an eyepiece 2610, and the like. The light-emitting device manufactured according to the present invention is used for the display portion 2602.

FIG. 14H shows a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a voice input portion 2704, a voice output portion 2705, operation keys 2706,
An external connection port 2707, an antenna 2708, and the like are included.
The light emitting device manufactured according to the present invention is connected to its display portion 2703.
It is manufactured by using for. The display portion 2703
By displaying white characters on a black background, power consumption of a mobile phone can be reduced.

If the emission luminance of the organic material becomes higher in the future, it becomes possible to enlarge and project the light containing the output image information with a lens or the like and use it for a front-type or rear-type projector.

In addition, the above-mentioned electric appliances are available on the Internet or C
Information distributed through an electronic communication line such as an ATV (cable television) is frequently displayed, and in particular, opportunities to display moving image information are increasing. Since the response speed of the organic material is extremely high, the light-emitting device is preferable for displaying moving images.

[0271] In the light-emitting device, light-emitting portions consume power. Therefore, it is preferable to display information so that the light-emitting portions are reduced as much as possible. Therefore, when a light emitting device is used for a portable information terminal, particularly a display portion mainly for character information such as a mobile phone or a sound reproducing device, the light emitting portion is driven to form character information with a non-light emitting portion as a background. Is preferred.

As described above, the applicable range of the light emitting device manufactured using the film forming apparatus of the present invention is extremely wide, and it can be used for electric appliances in all fields. Further, the electric appliance of this embodiment can be completed by using the light emitting device shown in Embodiment 4 or 5 formed by the film forming apparatus shown in Embodiments 1 to 3 for its display portion. .

[Embodiment 7] In this embodiment, the structure of a pixel portion of a light emitting device formed by the film forming apparatus of the present invention will be described.

FIG. 17A is a top view of a part of the pixel portion 1911. FIG. The pixel portion 1911 includes a plurality of pixels 19.
12 (1912 (a) to 1912 (C)). The top view shown here shows a state in which an insulating layer 1902 formed to cover an edge of a pixel electrode formed in a pixel is formed. That is, the insulating layer 1902
Are formed so as to cover the source line 1913, the scanning line 1914, and the current supply line 1915. Further, a region a where a connection portion between the pixel electrode and the TFT is formed below.
The portion (1903) is also covered with the insulating layer 1902.

Further, the pixel portion 191 shown in FIG.
1 is a sectional view taken along the dotted line AA ′ of FIG.
01 on the organic compound film 1905 (1905 (a) to 19
FIG. 17 (B) shows a state in which (C) is formed.
Here, an organic compound film made of the same material is formed in the vertical direction with respect to the paper surface, and organic compound films made of different materials are formed in the horizontal direction.

For example, the pixel (R) 191 shown in FIG.
2a shows an organic compound film (R) 1905a which emits red light.
Is formed, and an organic compound film (G) 1905b which emits green light is formed in the pixel (G) 1912b, and the pixel (B) 1912b is formed.
1912c is an organic compound film (B) 19 which emits blue light.
05c is formed. Note that the insulating layer 1902 serves as a margin when the organic compound film is formed, and the film formation position of the organic compound film is slightly shifted, so that the insulating layer 1902 is formed as shown in FIG.
Even if organic compound films made of different materials overlap on 02, there is no problem as long as it is on the insulating layer 1902.

Further, the pixel portion 191 shown in FIG.
FIG. 17B is a cross-sectional view taken along dotted line BB ′ of FIG.
FIG. 17C shows a state in which the organic compound film 1905 is formed over the pixel electrode 1901 in the same manner as in FIG.

The pixels cut along the dotted line BB '
Since an organic compound film (R) 1905a which emits red light similar to that of the pixel (R) 1912a is formed, FIG.
It has a structure shown by.

As described above, in the pixel portion 1911, the organic compound film (R) 1905a emitting red light is formed, the organic compound film (G) 1905b emitting green light is formed, and the organic compound film emitting blue light is formed. (B) 1905
c is formed, and the light emitting device can be made full color.

[0280]

As described above, by forming an organic compound film of a light emitting element using the film forming apparatus of the present invention, an organic compound film having a plurality of functional regions can be continuously formed in the same film forming chamber. Therefore, contamination of impurities at the interface of the functional region can be prevented. In addition, since a mixed region made of an organic compound forming each functional region can be formed between the functional regions, an energy barrier between organic layers at the interface of the functional region can be reduced. This makes it possible to improve the injectability of carriers between the organic layers, so that it is possible to reduce the driving voltage and to form a light-emitting element having a long lifetime. Further, a dense film can be formed by applying energy to an organic compound molecule formed from a light source provided in a film formation chamber.

[Brief description of the drawings]

FIG. 1 illustrates an element structure manufactured by a film formation apparatus of the present invention.

FIG. 2 illustrates a film formation chamber.

FIG. 3 illustrates an element structure.

FIG. 4 illustrates a film formation apparatus.

FIG. 5 is a view for explaining a metal mask alignment method.

FIG. 6 is a diagram illustrating a cleaning preliminary chamber.

FIG. 7 illustrates a film formation apparatus.

FIG. 8 is a diagram illustrating a material exchange chamber.

FIG. 9 illustrates a film formation apparatus.

FIG. 10 illustrates a film formation apparatus.

FIG. 11 illustrates a light-emitting device.

FIG. 12 illustrates a sealing structure.

FIG. 13 illustrates a light-emitting device.

FIG. 14 illustrates an example of an electric appliance.

FIG. 15 illustrates a conventional example.

FIG. 16 illustrates a conventional example.

FIG. 17 illustrates a pixel portion.

FIG. 18 illustrates a material chamber in a film formation chamber.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB18 DB03 FA01 4K029 BA62 BA64 BB02 BD01 DA01 DA02 DB14 EA03 EA05 KA01

Claims (28)

[Claims] A first exhaust means and a second exhaust means are connected to a film forming chamber having an inner wall whose surface is electropolished, wherein the film forming chamber has a first evaporation source and a second evaporation means. And a means for operating the first evaporation source and the second evaporation source at the same time. 2. A first evacuation unit and a second evacuation unit are connected to a film forming chamber having an inner wall whose surface is electropolished, wherein the film forming chamber is provided with a first evaporation source and a second evaporation unit. And a means for continuously operating from the first evaporation source to the second evaporation source. 3. A first exhaust unit and a second exhaust unit are connected to a film forming chamber having an inner wall whose surface is electropolished, wherein the film forming chamber is provided with a first evaporation source and a second evaporation unit. And a means for operating without temporally dividing the first evaporation source to the second evaporation source. 4. The film forming apparatus according to claim 1, wherein the ultimate degree of vacuum of the film forming chamber is 10 ⁻⁶ Pa or less. 5. The film forming apparatus according to claim 1, wherein the first exhaust unit is a cryopump, and the second exhaust unit is a dry pump. 6. The film forming apparatus according to claim 1, wherein an average surface roughness of the surface of the inner wall is 5 nm or less. 7. A first exhaust means and a second exhaust means are connected to a film forming chamber having an inner wall whose surface is electropolished, and said film forming chamber is provided with a first vapor deposition source comprising a plurality of evaporation sources. Means, and a second vapor deposition means comprising a plurality of evaporation sources, wherein the first vapor deposition means and the second vapor deposition means are provided with means for operating simultaneously. Membrane equipment. 8. A first evacuation means and a second evacuation means are connected to a film forming chamber having an inner wall whose surface is electropolished, and said film forming chamber has a first vapor deposition comprising a plurality of evaporation sources. And a second vapor deposition means comprising a plurality of evaporation sources, and a means for continuously operating from the first evaporation source to the second evaporation source is provided. . 9. A first evacuation means and a second evacuation means are connected to a film forming chamber having an inner wall whose surface is electropolished, and said film forming chamber has a first vapor deposition comprising a plurality of evaporation sources. Means, and a second vapor deposition means comprising a plurality of evaporation sources, characterized in that there is provided means for operating without temporally dividing from the first evaporation source to the second evaporation source. Film forming equipment. 10. A film forming apparatus in which a plurality of film forming chambers whose inner walls are electropolished are connected via a gate, wherein each of the film forming chambers has a first exhaust means and a second exhaust means. Exhaust means is connected, and each of the film forming chambers has a first vapor deposition means composed of a plurality of evaporation sources and a second vapor deposition means composed of a plurality of evaporation sources. A film forming apparatus, comprising: means for simultaneously operating a vapor deposition means and the second vapor deposition means. 11. A film forming apparatus in which a plurality of film forming chambers whose inner wall surfaces are electropolished are connected via a gate, wherein each of the film forming chambers has a first exhaust means and a second exhaust means. Exhaust means is connected, and each of the film forming chambers has a first vapor deposition means composed of a plurality of evaporation sources, and a second vapor deposition means composed of a plurality of evaporation sources, A film forming apparatus comprising means for continuously operating from an evaporation source to a second evaporation source. 12. A film forming apparatus in which a plurality of film forming chambers whose inner walls are electropolished are connected via a gate, wherein each of the film forming chambers has a first exhaust means and a second exhaust means. Exhaust means is connected, and each of the film forming chambers has a first vapor deposition means composed of a plurality of evaporation sources, and a second vapor deposition means composed of a plurality of evaporation sources, A film forming apparatus, comprising: means for operating without temporally dividing from an evaporation source to a second evaporation source. 13. A film forming chamber in which a surface of an inner wall is electrolytically polished, comprising: a plurality of film forming units; and a substrate transport means capable of continuously moving between the plurality of film forming units. Each of the parts has a first vapor deposition means composed of a plurality of evaporation sources, and a second vapor deposition means composed of a plurality of evaporation sources, wherein the first vapor deposition means and the second vapor deposition means A film forming apparatus, comprising: means for operating simultaneously. 14. A film forming chamber in which the surface of an inner wall is electrolytically polished, comprising: a plurality of film forming units; and a substrate transfer means capable of continuously moving between the plurality of film forming units. Each of the units has a first vapor deposition means composed of a plurality of evaporation sources, and a second vapor deposition means composed of a plurality of evaporation sources, and continuously from the first evaporation source to the second evaporation source. A film forming apparatus comprising an operating means. 15. A film forming chamber in which the surface of an inner wall is electrolytically polished, comprising: a plurality of film forming units; and a substrate transfer means capable of continuously moving between the plurality of film forming units. Each of the units has a first vapor deposition means composed of a plurality of evaporation sources and a second vapor deposition means composed of a plurality of evaporation sources. A film forming apparatus, comprising: means for operating without division. 16. The film forming apparatus according to claim 1, wherein the film forming chamber has a light source. 17. A first film forming chamber having a plurality of evaporation sources, wherein a plurality of kinds of organic compounds are simultaneously vapor-deposited, and a concentration of each of the plurality of kinds of organic compounds is continuously changed. By forming an organic compound film of the above, in a second film forming chamber having a plurality of evaporation sources, by simultaneously depositing a plurality of types of organic compounds, and by continuously changing the concentration of the plurality of types of organic compounds, Forming a second organic compound film, simultaneously depositing a plurality of types of organic compounds in a third film forming chamber having a plurality of evaporation sources, and continuously changing the concentrations of the plurality of types of organic compounds. Forming a third organic compound film, wherein the first organic compound film, the second organic compound film, and the third organic compound film each emit different light. One . 18. A plurality of organic compounds are simultaneously deposited in a first film forming chamber having a plurality of evaporation sources and an inner wall surface of which is electropolished, and a concentration of the plurality of organic compounds is determined. Are respectively continuously changed to form a first organic compound film, and a plurality of types of organic compounds are formed in a second film forming chamber having a plurality of evaporation sources and having an inner wall surface electropolished. A compound is vapor-deposited at the same time, and the concentration of the plurality of types of organic compounds is continuously changed to form a second organic compound film. In the third film forming chamber that has been deposited a plurality of organic compounds simultaneously, and by continuously changing the concentration of the plurality of organic compounds, respectively, to form a third organic compound film, The first organic compound The deposition method according to claim exhibit different emission said second organic compound film and the third organic compound layer, respectively. 19. The method according to claim 18, wherein the average surface roughness of the inner wall surfaces of the first film forming chamber, the second film forming chamber, and the third film forming chamber is 5 nm or less. Characteristic film forming method. 20. The method according to claim 17, wherein a first functional region is formed in the same film forming chamber using the first organic compound as an evaporation source, and the second organic compound is evaporated. A film forming method, wherein a second functional region is formed as a source. 21. The mixed region according to claim 20, wherein the first organic compound and the second organic compound are used as evaporation sources at an interface between the first functional region and the second region. A film forming method characterized by the above-mentioned. 22. The method according to claim 20, wherein the first organic compound and the second organic compound each have a hole-injecting property, a hole-transporting property, a light-emitting property, a blocking property, an electron-transporting property, or an electron-transporting property. A film forming method formed of an injectable organic compound and formed of different organic compounds. 23. The method according to claim 20, wherein a second mixed region comprising the second organic compound and the third organic compound is formed in a part of the second functional region. A film forming method. 24. The organic compound according to claim 23, wherein the first organic compound and the second organic compound are formed of a hole-injecting, hole-transporting, blocking, electron-transporting, or electron-injecting organic compound. The film formation method, wherein the third organic compound is formed of a light-emitting organic compound and is formed of organic compounds having different properties. 25. The method according to claim 20, wherein the first functional region is formed of a hole transporting organic compound, and the second functional region is formed of an electron transporting organic compound. A film forming method characterized by being formed. 26. The film forming method according to claim 22, wherein an aromatic diamine compound is used as the hole transporting organic compound. 27. The organic compound according to any one of claims 22 to 26, wherein the organic compound having an electron transporting property is a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, Alternatively, a film formation method using a phenanthroline derivative. 28. The light-emitting organic compound according to any one of claims 22 to 27, wherein the light-emitting organic compound is a metal complex having a quinoline skeleton, a metal complex having a benzoxazole skeleton, or a metal complex having a benzothiazole skeleton. A film forming method characterized by being used.