JP2002313997A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JP2002313997A
JP2002313997A JP2001116792A JP2001116792A JP2002313997A JP 2002313997 A JP2002313997 A JP 2002313997A JP 2001116792 A JP2001116792 A JP 2001116792A JP 2001116792 A JP2001116792 A JP 2001116792A JP 2002313997 A JP2002313997 A JP 2002313997A
Authority
JP
Japan
Prior art keywords
ball
inspection
semiconductor device
radius
bump electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001116792A
Other languages
Japanese (ja)
Other versions
JP2002313997A5 (en
Inventor
Masayasu Akaiwa
正康 赤岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001116792A priority Critical patent/JP2002313997A/en
Publication of JP2002313997A publication Critical patent/JP2002313997A/en
Publication of JP2002313997A5 publication Critical patent/JP2002313997A5/ja
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To automate the detection of the projection caused by the deformation of a bump electrode. SOLUTION: In a semiconductor device manufacturing method which inspects a semiconductor device where a plurality of bump electrodes are made in planar forms on the mounting face of the semiconductor device, a plurality of edges of the bump electrode are detected from the plane image of the mounting face. Based on the detected edge, the center of a ball and the radius of a ball circle are obtained, an inspection circle centering upon the center of the ball is set with a radius where a set value is added to the radius of the ball, and the detection of the edge of the bump electrode is performed along the circumference of this inspection circle, thereby detecting the deformation of the bump electrode. Likewise, the inner margin of the inspection range in the shape of a circle centering upon the center of the ball is set with the radius where the set value is added to the radius of the ball, and an outer margin of the inspection range including the inner margin of this inspection range is set, and the detection of the edge of the bump electrode is formed between the inner margin and the outer margin of the inspection range, thereby detecting the deformation of the bump electrode.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置の製造
方法に関し、特に、バンプ電極の検査に適用して有効な
技術に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a technique which is effective when applied to inspection of bump electrodes.

【0002】[0002]

【従来の技術】半導体装置では、微細化の進展に伴い、
半導体チップ面積に対して搭載する回路の規模を拡大す
る高集積化が行なわれており、こうした高集積化によっ
て搭載されるより多くの回路のために、より多くの接続
端子が半導体装置に求められている。例えば半導体記憶
装置では、微細化の進展により大容量化が進み、大容量
のデータを高速で処理するためにバス幅が拡大され、よ
り多くの外部端子が必要となっている。
2. Description of the Related Art In semiconductor devices, with the progress of miniaturization,
2. Description of the Related Art High integration has been performed to increase the scale of a circuit to be mounted on a semiconductor chip area, and more connection terminals are required for a semiconductor device for more circuits to be mounted due to such higher integration. ing. For example, in semiconductor memory devices, the capacity has been increased due to the progress of miniaturization, the bus width has been increased in order to process large-capacity data at high speed, and more external terminals are required.

【0003】こうした接続端子の増加に対応するため
に、接続端子を増加させることを目的として、半導体装
置の実装面に接続端子となる例えばボール状或いは円柱
状のバンプ電極を面状に配置したBGA(Ball Grid Arr
ay)型等の半導体装置が用いられている。
In order to cope with such an increase in the number of connection terminals, for the purpose of increasing the number of connection terminals, a BGA in which, for example, ball-shaped or column-shaped bump electrodes serving as connection terminals are arranged in a plane on a mounting surface of a semiconductor device. (Ball Grid Arr
ay) type semiconductor devices are used.

【0004】また、半導体装置では、エージングと呼ば
れる高温雰囲気下で半導体装置を動作させることによっ
て、初期不良の発生を加速させて試験を行うバーンイン
が行われており、BGA型の半導体装置では試験後に着
脱が容易に可能なバーンインソケットに半導体装置を収
容してバーンインが行われている。
In a semiconductor device, burn-in is performed in which a test is performed by accelerating the generation of initial failures by operating the semiconductor device in a high-temperature atmosphere called aging. In a BGA type semiconductor device, burn-in is performed after the test. Burn-in is performed by housing a semiconductor device in a burn-in socket that can be easily attached and detached.

【0005】[0005]

【発明が解決しようとする課題】そして、このバーンイ
ンソケットでは、ソケットの端子に半導体装置のバンプ
電極を圧接した状態で導通をとり、この状態で半導体装
置が高温雰囲気におかれることによって、バンプ電極に
変形を生じさせることがある。こうした変形によって発
生した突起状のボール変形は、半導体装置を配線基板等
に実装する際に実装不良の要因となる。このため、検査
を行いバンプ電極に変形の生じた半導体装置を排除する
必要がある。
In this burn-in socket, conduction occurs when the bump electrode of the semiconductor device is pressed against the terminal of the socket, and the semiconductor device is placed in a high-temperature atmosphere in this state. May cause deformation. The protruding ball deformation generated by such deformation causes a mounting failure when the semiconductor device is mounted on a wiring board or the like. For this reason, it is necessary to perform an inspection and to eliminate the semiconductor device in which the bump electrode is deformed.

【0006】しかし、現状の外観検査では、検査に用い
る検査装置がバンプ電極が円形となっていることを前提
としており、パッケージ外形寸法、ボール平坦度、ボー
ル径、ボール高さ等の検査は行っているが、前記突起等
の検査機能がないために、こうした変形を自動で検出す
ることができない。
However, in the current appearance inspection, it is assumed that an inspection apparatus used for the inspection has a circular bump electrode, and inspections such as package outer dimensions, ball flatness, ball diameter, and ball height are performed. However, since there is no inspection function for the protrusion or the like, such deformation cannot be automatically detected.

【0007】従って、こうした変形を検出するためには
実体顕微鏡を用いた目視検査を行わなければならない。
この検査では、個別の半導体装置毎に目視によって検査
を行うので、電極の数等によっても異なるが、半導体装
置1個当たり10秒〜60秒程度の時間を要し、多大の
労力及び時間を要しており、製品の検査コストを著しく
増加させている。
Therefore, in order to detect such deformation, a visual inspection using a stereo microscope must be performed.
In this inspection, since the inspection is performed visually for each individual semiconductor device, it depends on the number of electrodes and the like, but it takes about 10 seconds to 60 seconds per semiconductor device, requiring a great deal of labor and time. This significantly increases the cost of product inspection.

【0008】本発明の課題は、これらの問題点を解決
し、半導体装置のバンプ電極の変形を検出するための検
査を自動化することが可能な技術を提供することにあ
る。本発明の前記ならびにその他の課題と新規な特徴
は、本明細書の記述及び添付図面によって明らかになる
であろう。
An object of the present invention is to solve these problems and to provide a technique capable of automating an inspection for detecting deformation of a bump electrode of a semiconductor device. The above and other problems and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

【0009】[0009]

【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
下記のとおりである。半導体装置の実装面に複数のバン
プ電極が面状に配置された半導体装置を検査する半導体
装置の製造方法において、前記実装面の平面画像からバ
ンプ電極のエッジを複数検出し、検出したエッジを基に
ボール中心及びボール円の半径を求め、ボールの半径に
設定値を加えた半径で前記ボール中心を中心とする検査
円を設定し、この検査円の円周に沿ってバンプ電極の有
無検出を行うことによって、バンプ電極の変形を検出す
る。
SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows. In a semiconductor device manufacturing method for inspecting a semiconductor device in which a plurality of bump electrodes are arranged in a plane on a mounting surface of a semiconductor device, a plurality of bump electrode edges are detected from a planar image of the mounting surface, and the detected edges are used as a basis. Calculate the ball center and the radius of the ball circle, set an inspection circle centered on the ball center with the radius obtained by adding the set value to the ball radius, and detect the presence or absence of the bump electrode along the circumference of the inspection circle. By doing so, the deformation of the bump electrode is detected.

【0010】同様に、前記実装面の平面画像からバンプ
電極のエッジを複数検出し、検出したエッジを基にボー
ル中心及びボール円の半径を求め、ボールの半径に設定
値を加えた半径で前記ボール中心を中心とした円状の検
査範囲内縁を設定し、この検査範囲内縁を包含する検査
範囲外縁を設定し、前記検査範囲の内縁と外縁との間で
バンプ電極の有無検出を行うことによって、バンプ電極
の変形を検出する。
Similarly, a plurality of bump electrode edges are detected from the planar image of the mounting surface, the center of the ball and the radius of the ball circle are determined based on the detected edges, and the radius is obtained by adding a set value to the ball radius. By setting the inner edge of a circular inspection range centered on the center of the ball, setting the outer edge of the inspection range including the inner edge of the inspection range, and detecting the presence or absence of a bump electrode between the inner edge and the outer edge of the inspection range. Then, the deformation of the bump electrode is detected.

【0011】上述した本発明によれば、変形による突起
の検出を自動化することが可能となり、製品の検査コス
トの低減が可能となる。以下、本発明の実施の形態を説
明する。なお、実施の形態を説明するための全図におい
て、同一機能を有するものは同一符号を付け、その繰り
返しの説明は省略する。
According to the present invention described above, it is possible to automate the detection of protrusions due to deformation, and to reduce the cost of product inspection. Hereinafter, embodiments of the present invention will be described. In all the drawings for describing the embodiments, components having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted.

【0012】[0012]

【発明の実施の形態】(実施の形態1)図1に示すの
は、本発明の一実施の形態である半導体装置の検査を行
う外観検査装置の概略構成を示す図であり、検査対象と
なる半導体装置1の実装面に複数面状に配置されたバン
プ電極11をカメラ等の撮像部2によって撮影した実装
面の平面画像データを画像メモリ3に送り、この画像デ
ータを基に画像処理部4にて突起等の変形を検出し予め
定められた設定値を越える変形の有無によって半導体装
置の良否を判定する。
(Embodiment 1) FIG. 1 is a diagram showing a schematic configuration of a visual inspection apparatus for inspecting a semiconductor device according to an embodiment of the present invention. The planar image data of the mounting surface obtained by photographing the bump electrodes 11 arranged in a plurality of planes on the mounting surface of the semiconductor device 1 by the imaging unit 2 such as a camera is sent to the image memory 3, and the image processing unit is performed based on the image data. In step 4, the deformation of the protrusion or the like is detected, and the quality of the semiconductor device is determined based on the presence or absence of a deformation exceeding a predetermined set value.

【0013】この変形の検出について図2乃至図4を用
いて説明する。先ず、図2に平面形状を示すバンプ電極
11に変形が生じ突起12が形成されている場合を例と
して説明する。先ず、バンプ電極11について複数のボ
ールエッジ13を検出し、図3に示すように、検出した
ボールエッジ13を基に最小二乗法によってボール中心
14及びボール円の半径rを求める。次に、図4に示す
ように、このボール中心14を中心とし、ボールの半径
rに予め定められた設定値dを加えた半径(r+d)の
検査円15を設定し、この検査円15の円周に沿ってバ
ンプ電極11の有無検出を行う。
The detection of this deformation will be described with reference to FIGS. First, a description will be given of an example in which the bump electrode 11 having the planar shape shown in FIG. 2 is deformed and the projection 12 is formed. First, a plurality of ball edges 13 are detected for the bump electrode 11, and as shown in FIG. 3, the ball center 14 and the radius r of the ball circle are obtained by the least square method based on the detected ball edges 13. Next, as shown in FIG. 4, an inspection circle 15 having a radius (r + d) obtained by adding a predetermined set value d to the radius r of the ball with the center 14 as the center is set. The presence or absence of the bump electrode 11 is detected along the circumference.

【0014】この検出では、バンプ電極11の像を
「白」半導体装置の実装面の像を「黒」にデータを2値
化し、データが「黒」から「白」或いは「白」から
「黒」に変化する部分がバンプ電極11のエッジと判断
される。電極11の突起12については「黒」データの
中に「白」データが連続して検出されることから、その
有無が判断される。
In this detection, the image of the bump electrode 11 is “white”, and the image of the mounting surface of the semiconductor device is “black”, and the data is binarized, and the data is changed from “black” to “white” or “white” to “black”. Is determined to be the edge of the bump electrode 11. For the protrusion 12 of the electrode 11, "white" data is continuously detected in "black" data, so that the presence / absence is determined.

【0015】設定値dを越える突起12が変形によって
形成されていない場合には、検査円15上にバンプ電極
11のエッジは検出されないが、設定値dを越える突起
12が変形によって形成されている場合には、検査円1
5上にバンプ電極11の有無が検出されることになる。
こうして、検査円15上のエッジの有無によって、設定
値dを越える変形の有無を自動検出することができる。
When the projection 12 exceeding the set value d is not formed by deformation, the edge of the bump electrode 11 is not detected on the inspection circle 15, but the projection 12 exceeding the set value d is formed by deformation. In case, inspection circle 1
5, the presence or absence of the bump electrode 11 is detected.
In this manner, the presence or absence of a deformation exceeding the set value d can be automatically detected based on the presence or absence of an edge on the inspection circle 15.

【0016】また、こうした変形を検出する場合には、
パターンマッチング等の方法も考えられるが、パターン
マッチングでは突起部分の長さを測定することが困難な
ため、突起の大小によって良否の判定を行うことが困難
である。これに対して、検査円15を設定する本実施の
形態の検査では、設定値dよりも小さな突起については
検出が行われず、設定値dを変えることによって検出す
る突起12の長さを変えることができる。従って、突起
12の許容値を設定値dとすることによって突起12の
長さに応じた良否判定が可能となる。
When detecting such a deformation,
Although a method such as pattern matching is conceivable, it is difficult to measure the length of the protruding portion in pattern matching, so that it is difficult to determine pass / fail based on the size of the protrusion. On the other hand, in the inspection according to the present embodiment in which the inspection circle 15 is set, the projection smaller than the set value d is not detected, and the length of the detected projection 12 is changed by changing the set value d. Can be. Therefore, by setting the allowable value of the protrusion 12 to the set value d, it is possible to make a quality determination according to the length of the protrusion 12.

【0017】(実施の形態2)本実施の形態の検査を行
う外観検査装置については、前述した実施の形態の装置
と同様の概略構成となっており、変形の検出について
も、図2に示すようにボールエッジ13を検出し、図3
に示すようにボール中心14及びボール円の半径rを求
めるまでは同様である。
(Embodiment 2) The appearance inspection apparatus for performing the inspection according to the present embodiment has a schematic configuration similar to that of the apparatus according to the above-described embodiment, and the detection of deformation is also shown in FIG. As shown in FIG.
This is the same until the ball center 14 and the radius r of the ball circle are obtained as shown in FIG.

【0018】本実施の形態ではこの後、図5に示すよう
に、このボール中心14を中心とし、ボールの半径rに
予め定められた設定値dを加えた半径(r+d)の円状
の検査範囲内縁16を設定し、検査範囲内縁16を包含
する検査範囲外縁17を設定し、検査範囲の内縁16と
外縁17との間でバンプ電極11のエッジの検出を行う
ことによって、バンプ電極11の変形を検出する。検査
範囲外縁17として、図5に示す例ではボールの半径r
に予め定められた値Dを加えた半径(r+D)の円状に
設定してある。
In the present embodiment, thereafter, as shown in FIG. 5, a circular inspection centered on the ball center 14 and having a radius (r + d) obtained by adding a predetermined set value d to the radius r of the ball. By setting the inner edge 16 of the range, setting the outer edge 17 of the inspection range including the inner edge 16 of the inspection range, and detecting the edge of the bump electrode 11 between the inner edge 16 and the outer edge 17 of the inspection range, Detect deformation. The radius r of the ball in the example shown in FIG.
Is set to a circle having a radius (r + D) obtained by adding a predetermined value D to.

【0019】このように、検査範囲の内縁16と外縁1
7とによって規定された環状の検査範囲を設定し、この
検査範囲についてエッジの検出を行って、又は前記
「白」データの有無検出を行って、突起12を検出す
る。検査範囲が広がることから、突起12の検出が容易
となり、加えて、バンプ電極11の変形による突起12
の検出の他にバンプ電極11間の異物の発見も可能にな
る。
Thus, the inner edge 16 and the outer edge 1 of the inspection range are
The projection 12 is detected by setting an annular inspection range defined by 7 and detecting the edge of this inspection range or detecting the presence or absence of the “white” data. Since the inspection range is widened, the detection of the protrusions 12 is facilitated.
In addition to the detection of foreign substances, it is possible to find foreign substances between the bump electrodes 11.

【0020】バンプ電極11間の異物を積極的に発見す
るためには、図6に示すように、検査範囲の外縁17
を、各辺の長さがバンプ電極11の間隔lに相当する矩
形とすることによって、バンプ電極11の配置された実
装面の略全域にわたって異物を検査する構成とすること
もできる。
In order to positively find foreign matter between the bump electrodes 11, as shown in FIG.
Is a rectangle in which the length of each side is equivalent to the interval l between the bump electrodes 11, so that a foreign substance can be inspected over substantially the entire mounting surface on which the bump electrodes 11 are arranged.

【0021】なお、ボール中心14の検出に関しては、
全てのバンプ電極11について必ずしも行う必要はな
く、例えば図7に示すように、2つの電極11a(実線
図示)についてボールエッジ13を検出してボール中心
14を求め、他の電極11b(破線図示)については、
設計値を基にボール中心及びボール円の半径を決定し、
これらの値に基づいて設定された検査円15或いは検査
範囲によって突起12の検出を行うことも可能である。
この構成によって、ボール中心14の検出に要する時間
が短縮され検査時間の短縮を図ることができる。
The detection of the ball center 14 is as follows.
It is not always necessary to perform the process for all the bump electrodes 11. For example, as shown in FIG. about,
Determine the center of the ball and the radius of the ball circle based on the design values,
It is also possible to detect the projection 12 by the inspection circle 15 or the inspection range set based on these values.
With this configuration, the time required to detect the ball center 14 is reduced, and the inspection time can be reduced.

【0022】以上、本発明を前記実施の形態に基づき具
体的に説明したが、本発明は、前記実施の形態に限定さ
れるものではなく、その要旨を逸脱しない範囲において
種々変更可能であることは勿論である。
Although the present invention has been specifically described based on the above-described embodiment, the present invention is not limited to the above-described embodiment, and can be variously modified without departing from the gist of the invention. Of course.

【0023】[0023]

【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば、下
記のとおりである。 (1)本発明によれば、バンプ電極の変形による突起の
検出を自動化することができるという効果がある。 (2)本発明によれば、上記効果(1)により、検査に
要する時間を短縮することができるという効果がある。 (3)本発明によれば、上記効果(1)により、目視検
査に要していた労力を低減することができるという効果
がある。 (4)本発明によれば、上記効果(2)(3)により、
検査に要するコストが低減するという効果がある。
The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows. (1) According to the present invention, there is an effect that detection of a protrusion due to deformation of a bump electrode can be automated. (2) According to the present invention, the effect (1) has an effect that the time required for the inspection can be reduced. (3) According to the present invention, the effect (1) has an effect that the labor required for the visual inspection can be reduced. (4) According to the present invention, the effects (2) and (3)
This has the effect of reducing the cost required for inspection.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態に用いられる検査装置を
示す概略構成図である。
FIG. 1 is a schematic configuration diagram showing an inspection device used in an embodiment of the present invention.

【図2】本発明の一実施の形態である検査を示す部分平
面図である。
FIG. 2 is a partial plan view showing an inspection according to an embodiment of the present invention.

【図3】本発明の一実施の形態である検査を示す部分平
面図である。
FIG. 3 is a partial plan view showing an inspection according to an embodiment of the present invention.

【図4】本発明の一実施の形態である検査を示す部分平
面図である。
FIG. 4 is a partial plan view showing an inspection according to an embodiment of the present invention.

【図5】本発明の他の実施の形態である検査を示す部分
平面図である。
FIG. 5 is a partial plan view showing an inspection according to another embodiment of the present invention.

【図6】本発明の他の実施の形態である検査を示す部分
平面図である。
FIG. 6 is a partial plan view showing an inspection according to another embodiment of the present invention.

【図7】本発明の実施の形態である検査の変更例を示す
部分平面図である。
FIG. 7 is a partial plan view showing a modification of the inspection according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…半導体装置、2…撮像部、3…画像メモリ、4…画
像処理部、11…バンプ電極、12…突起、13…ボー
ルエッジ、14…ボール中心、15…検査円、16…検
査範囲内縁、17…検査範囲外縁。
DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Imaging part, 3 ... Image memory, 4 ... Image processing part, 11 ... Bump electrode, 12 ... Protrusion, 13 ... Ball edge, 14 ... Ball center, 15 ... Inspection circle, 16 ... Inner edge of inspection range , 17 ... Outer edge of inspection range.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 半導体装置の実装面に複数のバンプ電極
が面状に配置された半導体装置を検査する半導体装置の
製造方法において、 前記実装面の平面画像からバンプ電極のエッジを複数検
出し、検出したエッジを基にボール中心及びボール円の
半径を求め、ボールの半径に設定値を加えた半径で前記
ボール中心を中心とする検査円を設定し、この検査円の
円周に沿ってバンプ電極の検出を行うことによって、バ
ンプ電極の変形を検出することを特徴とする半導体装置
の製造方法。
1. A semiconductor device manufacturing method for inspecting a semiconductor device in which a plurality of bump electrodes are arranged in a plane on a mounting surface of the semiconductor device. The center of the ball and the radius of the ball circle are determined based on the detected edge, and an inspection circle centered on the center of the ball is set at a radius obtained by adding the set value to the radius of the ball. A method for manufacturing a semiconductor device, comprising detecting a deformation of a bump electrode by detecting an electrode.
【請求項2】 実装面に複数のバンプ電極が面状に配置
された半導体装置を検査する半導体装置の製造方法にお
いて、 前記実装面の平面画像からバンプ電極のエッジを複数検
出し、検出したエッジを基にボール中心及びボール円の
半径を求め、ボールの半径に設定値を加えた半径で前記
ボール中心を中心とした円状の検査範囲内縁を設定し、
この検査範囲内縁を包含する検査範囲外縁を設定し、前
記検査範囲の内縁と外縁との間でバンプ電極の検出を行
うことによって、バンプ電極の変形を検出することを特
徴とする半導体装置の製造方法。
2. A method of manufacturing a semiconductor device for inspecting a semiconductor device in which a plurality of bump electrodes are arranged in a plane on a mounting surface, wherein a plurality of edges of the bump electrodes are detected from a plane image of the mounting surface, and the detected edges are detected. Determine the ball center and the radius of the ball circle based on
Manufacturing a semiconductor device, wherein a deformation of a bump electrode is detected by setting an outer edge of an inspection range including an inner edge of the inspection range and detecting a bump electrode between the inner edge and the outer edge of the inspection range. Method.
【請求項3】 前記検査範囲外縁が、内側の検査範囲内
縁を包含する円形であることを特徴とする請求項2に記
載の半導体装置の製造方法。
3. The method according to claim 2, wherein the outer edge of the inspection range is a circle including the inner edge of the inner inspection range.
【請求項4】 前記検査範囲外縁が、内側の検査範囲内
縁を包含する矩形であることを特徴とする請求項2に記
載の半導体装置の製造方法。
4. The method according to claim 2, wherein the outer edge of the inspection range is a rectangle including the inner edge of the inner inspection range.
【請求項5】 前記矩形が前記バンプ電極の間隔に相当
する大きさであることを特徴とする請求項4に記載の半
導体装置の製造方法。
5. The method according to claim 4, wherein the rectangle has a size corresponding to an interval between the bump electrodes.
JP2001116792A 2001-04-16 2001-04-16 Method of manufacturing semiconductor device Pending JP2002313997A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001116792A JP2002313997A (en) 2001-04-16 2001-04-16 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JP2002313997A true JP2002313997A (en) 2002-10-25
JP2002313997A5 JP2002313997A5 (en) 2008-05-29

Family

ID=18967467

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002313997A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102126391B1 (en) * 2019-08-01 2020-06-24 한국생산기술연구원 Measurement method and apparatus for inspecting wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06323824A (en) * 1993-05-13 1994-11-25 Sharp Corp Method and equipment for inspecting appearance of bump
JPH09311020A (en) * 1996-05-23 1997-12-02 Nec Corp Inspection apparatus for protruding part
JP2000121338A (en) * 1998-10-13 2000-04-28 Yamagata Casio Co Ltd Electronic component inspecting device
JP2001094013A (en) * 1999-07-22 2001-04-06 Samsung Electronics Co Ltd Production method of chip-scale semiconductor package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06323824A (en) * 1993-05-13 1994-11-25 Sharp Corp Method and equipment for inspecting appearance of bump
JPH09311020A (en) * 1996-05-23 1997-12-02 Nec Corp Inspection apparatus for protruding part
JP2000121338A (en) * 1998-10-13 2000-04-28 Yamagata Casio Co Ltd Electronic component inspecting device
JP2001094013A (en) * 1999-07-22 2001-04-06 Samsung Electronics Co Ltd Production method of chip-scale semiconductor package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102126391B1 (en) * 2019-08-01 2020-06-24 한국생산기술연구원 Measurement method and apparatus for inspecting wafer

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