JP2002307695A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure whereby an element formed as an integrated circuit on a semiconductor chip can be prevented from being electrically broken by a working process manufacturing, and to provide its manufacturing method. SOLUTION: The integrated circuit which constitutes a driving circuit for driving an ink discharge means is formed on each semiconductor chip of a semiconductor wafer where at least two semiconductor chips are formed. A metal film is formed by covering at least a part of an upper layer of the integrated circuit. The metal film is formed from the integrated circuit to an end of the semiconductor chip and is also connected to another metal film via a region between semiconductor chips. Moreover, a pad for earthing is formed by the metal film to a region other than the semiconductor chip at a peripheral edge of the semiconductor wafer, which is connected to the metal films. The working process is carried out while the metal films are earthed via the pad for earthing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a method for manufacturing a semiconductor device formed as a recording head of an ink jet printer by performing a process such as sandblasting or dry etching. The present invention belongs to a technical field for preventing an element formed in an integrated circuit from being electrically destroyed.

[0002]

2. Description of the Related Art For example, in a recording head of a thermal ink jet printer, a heater (heating resistor) and its driving circuit are formed on a semiconductor chip, and ink grooves and ink supply holes are formed. After manufacturing a semiconductor device having a cavity serving as an ink chamber, an orifice plate is attached to the entire surface of the semiconductor device, and an orifice (nozzle) serving as an ink discharge port is opened at a position corresponding to each heater. Manufactured.

Here, the ink grooves and the ink supply holes are conventionally formed by using a photoresist to mask areas other than the ink grooves and the ink supply holes and using an etching solution such as hydrazine or potassium hydroxide (KOH). Thus, the semiconductor chip is formed by anisotropic etching. However, hydrazine has a very high carcinogenicity and a danger of explosion, and KOH is a very powerful etchant, which causes resist peeling and other areas, and extends to areas other than ink grooves and ink supply holes. There was a problem that there was a risk of being damaged.

On the other hand, a method of forming ink grooves and ink supply holes by a laser beam or a sandblast method is also used. For example, in the sand blast method, a region other than the ink groove and the ink supply hole is masked, and small-diameter particles such as alumina are sprayed onto the semiconductor device at a high speed, so that the ink groove is simultaneously formed on a plurality of semiconductor chips formed on the semiconductor wafer. And an ink supply hole. The sandblast method has an advantage that the ink groove, the ink, and the ink supply hole can be formed more clearly and more efficiently than the laser beam.

[0005]

However, in the sandblasting method, small-diameter particles are blown by dry air.
There has been a problem that static electricity is generated due to friction between particles and air, the surface of the semiconductor chip is charged up, and the semiconductor device may be electrostatically damaged. For example, the above-described recording head for a thermal ink jet printer has a problem that a driving circuit formed as an integrated circuit on a semiconductor chip may be electrostatically damaged during its manufacture.

In the above-described recording head for a thermal ink jet printer, the orifice is usually formed by dry-etching the orifice plate while masking a region other than the position corresponding to each heater. However, in the case of dry etching, when the orifice is opened, molecules in the ion plasma state are charged up on the oxide film formed on the heater, and the drive circuit connected to the heater is destroyed. There was a problem that sometimes.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, and to form an integrated circuit on a semiconductor chip formed as a recording head of an ink-jet printer by processing such as sandblasting or dry etching at the time of manufacturing. It is another object of the present invention to provide a semiconductor device having a structure capable of preventing an element constituting a drive circuit for driving an ink discharge unit from being electrically damaged, and a method of manufacturing the same.

[0008]

To achieve the above object, a first aspect of the present invention is a semiconductor device in the form of a semiconductor chip formed as a recording head of an ink jet printer, wherein the semiconductor chip is , At least, an ink discharging means, an integrated circuit constituting a driving circuit for driving the ink discharging means, a bonding pad, and a metal film covering at least a part of an upper layer of the integrated circuit, wherein the metal film is A semiconductor device formed from the integrated circuit to an end of the semiconductor chip.

Here, the metal film is further coated on an upper layer of at least one of the bonding pads.
Preferably, it is formed from the bonding pad to an end of the semiconductor chip.

The present invention is also a semiconductor device in a state of a semiconductor wafer, wherein the semiconductor wafer has at least two semiconductor chips as described above and a region other than the semiconductor chip at a peripheral portion of the semiconductor wafer. At least one ground pad formed by the metal film, wherein the metal film is also formed in a region between the semiconductor chips, and the metal film formed up to the end of all the semiconductor chips is It is another object of the present invention to provide a semiconductor device which is connected to each other via a region between the semiconductor chips and is also connected to the ground pad. Here, the area between the semiconductor chips is preferably a scribe line.

In each of the above aspects, the ink discharge means is a heating resistor, the metal film is formed of the same material as the material of the heating resistor, and the recording head is a recording head of a thermal ink jet printer. Preferably, it is a head.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device in a state of a semiconductor wafer on which at least two semiconductor chips are formed, each of which is formed as a recording head of an ink jet printer. On a semiconductor substrate of a semiconductor chip, at least an integrated circuit which forms an ink discharging means and a driving circuit for driving the ink discharging means is formed, and at least a part of an upper layer of the integrated circuit of the semiconductor chip is covered. A metal film formed from a circuit to an end of the corresponding semiconductor chip, and connected to each other via a region between the semiconductor chips, and the metal film forms a metal film at a peripheral portion of the semiconductor wafer. In a region other than the semiconductor chip, at least a portion connected to the metal film via a region between the semiconductor chips. Form one of the grounding pads while grounding the metal film through the grounding pad, there is provided a method of manufacturing a semiconductor device which is characterized in that the processing step.

Here, the ink discharge means is a heating resistor, the recording head is a recording head of a thermal ink jet printer, and the metal film forms the driving circuit and then switches the heating resistor. At the time of formation, it is preferable to form at the same time using the material of the heating resistor.

Further, a bonding pad is further formed on the semiconductor substrate of the semiconductor chip together with the integrated circuit, and the metal film is further coated on at least one of the bonding pads. To the end of the semiconductor chip. Further, the processing step includes a step of forming an ink groove for supplying ink to each of the ink ejection means and an ink supply hole penetrating to the back surface side of the semiconductor substrate for supplying ink to the ink groove. Preferably, at least one of the steps is performed. Preferably, the area between the semiconductor chips is a scribe line.

It is preferable that the metal film is also formed on the back surface of the semiconductor wafer on the side opposite to the side of the semiconductor chip on which the integrated circuit is formed. Also,
It is preferable that the metal film formed also on the back surface side of the semiconductor wafer is formed on the entire back surface side of the semiconductor wafer. Further, it is preferable that the metal film formed also on the back surface side of the semiconductor wafer be removed after the completion of the processing step.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention and a method for manufacturing the same will be described below in detail with reference to preferred embodiments shown in the accompanying drawings.

First, a recording head of a thermal ink jet printer will be described as an embodiment of a semiconductor device formed as a recording head of the ink jet printer according to the first aspect of the present invention.

FIG. 1 is a schematic diagram showing the configuration of an embodiment of a recording head of a thermal ink jet printer according to the present invention. As shown in FIG. 1, a recording head 10 of a thermal ink jet printer includes a heating resistor 11 (R) corresponding to an individual orifice (nozzle) that is a recording element for performing printing.
, R2,..., Rn) and its driving circuit 12. The drive circuit 12 includes heating resistors R1, R2,
, Rn respectively corresponding to driver transistors T1, T
, Tn and its control circuit 14.

Here, the heating resistors R1, R2,..., Rn
Are connected to a common ground GND, and the other ends of the corresponding driver transistors T1, T2,
.., Tn. The drains of the driver transistors T1, T2,..., Tn are connected to a common power supply VDD, and control signals from the control circuit 14 are input to their gates. The number of elements of the heating resistors R1, R2,..., Rn is not limited at all.

In the recording head 10, the control of the control circuit 14 controls the on / off of the driver transistors T1, T2,..., Tn. Driver transistors T1, T
When Tn is turned on, the corresponding heating resistor R
, R2,..., Rn, and the heating resistors R1, R
2,..., Rn generate heat. Conversely, when the driver transistors T1, T2,..., Tn are turned off, the heating resistors R1,
No current flows through R2,..., Rn.
2,..., Rn do not generate heat.

Next, the layout structure of the recording head of the above-described thermal ink jet printer will be described.

FIG. 2 is a layout sectional view of one embodiment of the recording head shown in FIG. FIG. 1 shows a recording head 10 of a thermal inkjet printer according to a semiconductor device of a first embodiment of the present invention manufactured by applying a semiconductor device manufacturing method of a second embodiment of the present invention and utilizing semiconductor manufacturing technology. First, an ink groove 18 for supplying ink to the orifice is formed in the center of the semiconductor chip 16 of the semiconductor substrate 15 such as a silicon substrate in the center of the figure.
5 is formed so as to extend in a direction perpendicular to the plane of FIG.

In order to supply ink to the ink groove 18, a plurality of ink supply holes (through holes) 20 communicating the back surface of the semiconductor substrate 15 of the semiconductor chip 16 and the ink groove 18 are provided in the ink groove 18. The holes (holes) are formed at predetermined intervals in the extending direction of the ink groove 18. The support frame 22 is a support member on which the semiconductor chip 16 is arranged.
An ink groove (or ink supply hole) 24 for supplying ink supplied from an ink tank (not shown) is formed in an ink groove 18 formed on the front surface of the semiconductor substrate 15 of the semiconductor chip 16 through the semiconductor chip 16.

A plurality of orifices 2 are arranged along the ink groove 18 at positions symmetrical in the drawing with respect to the ink groove 18.
6 comprises two rows of orifices alternately arranged at equal intervals. Each orifice 26 has a hollow circular shape and is formed on an orifice plate 28 made of polyimide or the like laminated on the semiconductor chip 16. For example, in the case of 360 npi (nozzle / inch), the orifices 26 are arranged at a pitch of about 71 μm per row in a direction perpendicular to the paper surface, and a total of 720 npi resolution can be realized in two rows.

The individual orifices 2 are provided above the semiconductor substrate 15 of the semiconductor chip 16 and below the orifice row.
A heating resistor 11 for controlling the ejection of the ink from the nozzle 6 is formed. Further, the semiconductor chip 16 (semiconductor substrate 1) outside the orifice row with the ink groove 18 as the center.
On the surface of 5), the individual heating resistors 11 (R1, R2,
, Rn), and a partition wall 30 is provided between the surface of the semiconductor chip 16 and the orifice plate 28 to form an ink flow path for supplying ink from the ink groove 18 to each orifice 26. Is formed.

The ink flows from the ink tank through the ink groove 24 of the support frame 22, through the ink supply hole 20 opened in the semiconductor chip 16 (semiconductor substrate 15), and the surface of the semiconductor chip 16 (semiconductor substrate 15). Ink groove 1
The ink is distributed to orifice rows formed on both sides of the ink groove 18 through the ink flow path formed by the partition 30. The driving circuit 12 generates the individual heating resistors 11 (R1, R2,...) In accordance with the image data.
Rn) is controlled, and a predetermined amount of ink is ejected from each corresponding orifice 26.

Next, a semiconductor device formed as a recording head of the ink jet printer of the present invention will be described in more detail with reference to FIG.

FIG. 3 is a plan view conceptually showing one embodiment of the semiconductor device of the present invention. FIG. 4 conceptually shows a semiconductor wafer 34 on which a plurality of semiconductor chips of the recording head 10 of the thermal inkjet printer shown in FIG. 2 are formed. In FIG. 2, the recording head 10
Has two orifice rows, but for the sake of simplicity, FIG. 3 assumes that only one orifice row is provided as in the recording head 10 shown in FIG.

As shown in the figure, in the semiconductor device of the present invention, in the state of an individual semiconductor chip, a metal film 36 is coated on the upper layer of the region of the drive circuit 12, and the semiconductor chip 16
Is formed so as to extend to the end portion of. That is,
The metal film 36 is constituted by a cover region 36a and an extension region 36b in the upper layer of the drive circuit 12. In the case of the illustrated example, the metal film 36 is further formed to cover the upper layer of the bonding pad 38 and extend to the end of the semiconductor chip 16. That is, the metal film 36 is further constituted by the covering region 36c and the extension region 36d in the upper layer of the bonding pad 38. In addition, the metal film 36 in the covering region 36c which covers the upper layer of the bonding pad 38 and the extension region 36b formed up to the end of the semiconductor chip 16 may be appropriately provided as necessary.

On the other hand, in the state of the semiconductor wafer 34, the metal film 36 is further covered along the area (scribe line) 40 between the individual semiconductor chips 16, and the line area 36 is formed.
e, and the extended regions 36b and 36d of the metal film 36 formed so as to extend to the ends of all the semiconductor chips 16 are formed by the line regions 36e of the metal film 36 formed on the scribe lines 40. Connected to each other.
A ground pad 42 is formed of the same metal film in a region other than the semiconductor chip 16 on the periphery of the semiconductor wafer 34, and the metal film 3 covered along the scribe line 40 is formed.
6 is connected.

All the semiconductor chips 16 formed on the semiconductor wafer 34 are separated by a scribe line 40 after the completion of the manufacturing process, and separated into individual semiconductor chips 16. At this time, the metal film 36 in the line region 36e formed on the scribe line 40 in the state of the semiconductor wafer 34 is removed when it is separated into the individual semiconductor chips 16. As a result, each semiconductor chip 1
6 includes a covered area 36 covered on the upper layer of the drive circuit 12.
a extending region 36b formed so as to extend to the end of the semiconductor chip 16 and the covering region 36c covering the upper layer of the bonding pad 38 and the semiconductor chip 1
Only the metal film 36 of the extension region 36d formed up to the end of the sixth layer 6 remains.

The metal film 36 may cover the entire surface of the drive circuit 12 (the entire covered area 36a), or may not cover a part of the drive circuit 12, if necessary. For example, only a part of the entire region of the drive circuit 12 except for a part that is problematic in an electric circuit such as an influence of capacitance on the circuit is formed by the metal film 3.
6 may be applied. In each of the semiconductor chips 16, the metal film 36 formed on the scribe line 40 (line region) is formed from both metal films 36 (covered regions 36 a and 36 c) coated on the drive circuit 12 and the bonding pad 38. 36e), or these metal films 36 may be connected on the semiconductor chip 16 to extend one or more to the metal film 36 on the scribe line 40.

As the metal film 36 used in the present invention, a known metal, for example, TaSiO or the like, which is a material for forming the heating resistor 11 or a heating resistor, is used in view of facilitation of a semiconductor device manufacturing process described later. A well-known metal, such as Ni, may be used as a material of a conductive wire that connects the drive circuit 11 and the drive circuit 12.
All metals or alloys thereof used in a normal semiconductor manufacturing process, such as 1, W, Ti, Mo, Ta, Pt, and Au, can be used. These metals may be used alone or in combination of two or more, for example, a plurality of layers may be used. In the present invention, the thickness of the metal film 36 is not particularly limited, but is preferably 10 nm (100 °) or more and 10 μm or less, more preferably
0.1 μm (100 nm) to 1 μm. It goes without saying that at least some kind of insulating film is interposed between the metal film 36 and the driving circuit 12 or the bonding pad 38. As the insulating film, any material can be used as long as it can be electrically insulated. For example, SiO ₂ ,
Examples often used are semiconductor devices such as SiN, borosilicate glass, and polyimide.

FIG. 5 is a flowchart showing a manufacturing process of a semiconductor device formed as a recording head of the ink jet printer shown in FIG.
The method of manufacturing a semiconductor device according to the present invention will be described with reference to (d) and the process chart of the semiconductor device manufacturing process shown in FIGS. FIG.
(D) is a sectional view taken along the line AA of FIG. 3 in steps S1, S4, S6 and S8 of the flowchart of the manufacturing process shown in FIG. 4, and FIGS.
4 is a sectional view taken along line BB of FIG. 3 at steps S1 and S3 of the flowchart of the manufacturing process shown in FIG.

First, in step S1, in the semiconductor device in the state of the semiconductor wafer 34, each semiconductor device on the semiconductor substrate 15 as shown in FIGS. The drive circuit 12 is formed in a region of the chip 16. Thereafter, as shown in FIG. 5A, a protective layer 44 of the drive circuit 12 such as a TEOS layer is formed on the drive circuit 12 and its peripheral portion, and further, on both sides of the drive circuit 12. Then, for example, an Al wiring 46 from the drive circuit 12 is formed.

Subsequently, in step S2, the heating resistor 11 is formed. For example, on the entire surface of the semiconductor wafer 34,
Metal film as a material of the heating resistor 11, for example, TaSiO
A two-layer metal film 36 composed of a layer 37a and a metal film, for example, a Ni layer 37b, which is a material of a conductive wire connecting the heating resistor 11 and the drive circuit 12, is used, and a mask for forming the heating resistor is used. Then, the two metal films 36 are photo-etched. Ni layer 3 which is a material of a conductive wire in the two-layer metal film 36
The area where only 7b is removed becomes the area of the heating resistor 11 (see FIG. 5B).

In this embodiment, the two-layer metal film 36 is etched by changing the pattern of the mask for forming the heating resistor. As a result, as shown in FIG. 6B, independently of the region of the heating resistor 11, the same TaSiO layer 37 a / Ni layer 37 b as the heating resistor 11 is also formed on the upper layer of the drive circuit 12. The film 36 is covered (Step S
3). In FIG. 6B, illustration of the uppermost protective layer 44 of the drive circuit 12 is omitted. In addition, the upper metal film 36 of the drive circuit 12 is formed up to the end of the semiconductor chip 16 and becomes an extended region 36 b, and is mutually connected between all the semiconductor chips 16 on the semiconductor wafer 34 via the scribe line 40. Connected.

At the same time when the heating resistor 11 is formed, the same photo-etching step is also used to form a two-layer metal film 36 (over the bonding pad 38 (Al wiring 46) formed on each semiconductor chip 16). Covered area 36c)
(See FIG. 5B). In this case, at least the (covered area 36c) of the metal film 36 coated on the upper layer of the bonding pad 38 corresponding to the ground terminal extends to the end of the semiconductor chip 16 to form an extended area 36d. Metal film 36 coated on line 40
(Line region 36e).

At the same time, ground pads 42 (see FIG. 3) are formed in a region other than the semiconductor chips 16 on the periphery of the semiconductor wafer 34 by the same photo-etching step.
This ground pad 42 is also connected to the scribe line 40.
It is to be connected to two layers of metal film 36 to be coated thereon. The number of ground pads 42 is not limited, and may be any number as long as it is one or more.

As described above, by using the metal film 36 for forming the heating resistor and the conductor, the metal film 36 can be coated on the upper layer of the drive circuit 12 and the bonding pad 38 without increasing the number of manufacturing steps. it can. The materials for the heating resistor and the conductor are not limited to those in the above embodiment, and other materials may be used. Further, the step of forming the heating resistor 11 and the conductor and the step of forming the upper metal film 36 of the drive circuit 12 may be performed separately. In this case, there is an advantage that the material for the heating resistor and the conductor and the material of the metal film 36 on the drive circuit 12 can be made different.

Material for Heating Resistor and Conductor and Drive Circuit 12
When the material of the upper metal film 36 is different from the material of the upper layer, the metal film 36 to be coated on the upper layer of the drive circuit 12 or the like may be formed of a normal semiconductor manufacturing process such as Al, W, Ti, Mo, Ta, or Pt. All metals or alloys thereof used in the above can be used. Further, the metal film 36 is
The upper layer 2 may be entirely coated, or may be partially coated as necessary.

The drive circuit 12 except for the heating resistor is used.
And the upper layer of the bonding pad 38 (the covering regions 36a and 3
6c), on the scribe line 40 (line area 36)
e), the metal film 36 (of the extension regions 36b and 36d) formed so as to extend from the drive circuit 12 and the bonding pad 38 to the scribe line 40 is not limited to a two-layer film, but may be a single-layer film. Any number of three or more layers may be used. For example, a scribe line 40 is formed above the drive circuit 12 and the bonding pad 38 except for the heating resistor.
On top, the metal film 36 formed to extend from the drive circuit 12 and the bonding pad 38 to the scribe line 40 may be a single-layer film of TaSiO only.

Subsequently, as shown in FIG.
Gold plating is applied to the bonding pads 38 and the ground pads 42 of each semiconductor chip 16 by electroless plating (S4). Thus, during the next thermal oxidation step, bonding pad 38 and ground pad 42 are formed.
Can be prevented from being oxidized and its conductivity can be maintained. It is preferable that a region other than the bonding pad 38 and the ground pad 42 of each semiconductor chip 16 be masked before gold plating.

When gold plating is performed without masking,
Gold plating is applied not only to the bonding pad 38 and the grounding pad 42 but also to the metal film 36 on the drive circuit 12 and the scribe line 40, so that the usage amount of the gold plating solution is dramatically increased. Therefore, by masking as described above, the amount of the gold plating solution used can be significantly reduced. Note that gold plating may also be applied to the Ni conductor (37b) connecting the heating resistor 11 and the drive circuit 12. This makes it possible to reduce the resistance of the conductor.

Subsequently, the surface of the heating resistor 11 is subjected to a thermal oxidation treatment (S5). As a result, an electric insulating film 11a is formed on the surface of the heating resistor 11. This insulating coating 1
1a has very high strength and has corrosion resistance to ink. For this reason, it is possible to eliminate the need for a protective layer for cavitation resistance and corrosion resistance, which is necessary for a recording head of a normal thermal ink jet printer, to reduce input energy, etc., to be compact, and to have high thermal efficiency. A recording head can be realized.

Subsequently, as shown in FIG. 5C, the semiconductor wafer 34 (semiconductor substrate 1) is formed by sandblasting.
5) Excavating the semiconductor substrate 15 of the semiconductor chip 16 in the region to become the ink supply hole 20 from the front side and / or back side of FIG. A processing step of opening (perforating) the ink supply hole 20 penetrating the front and back of the substrate 15) is performed (S6). Thereafter, as shown in FIG. 5D, a partition wall 30 is formed on the surface of the semiconductor chip 16, and a cavity for forming the ink chamber 31 is formed on the heating resistor 11 of the semiconductor wafer 34 (semiconductor chip 16). An orifice plate 28 is attached to the surface (S7), and a processing step of opening (piercing) the orifice 26 by dry etching is performed (S8).

Here, in the present invention, when the ink groove 18 is formed by the sand blast method, when the ink supply hole 20 is opened, and when the orifice 26 is opened by dry etching, the semiconductor processing is performed. Wafer 3
4, the driving circuit 12, the bonding pad 38, and the ground pad 42 via the ground pad 42 formed on
Is electrically connected to the ground (ground), and the electric charge can be released to the ground.
As a result, according to the present invention, it is possible to prevent the drive circuit 12 from being electrically damaged.

The semiconductor device and the method of manufacturing the same according to the present invention are basically as described above. In the method of manufacturing a semiconductor device according to the present invention, processing before forming the ink grooves 18 by sandblasting, before opening the ink supply holes 20, and before opening the orifice 26 by dry etching, etc. Previously, the metal film 36 is provided on the surface of the semiconductor wafer 34 on which the drive circuits 12 of the semiconductor chips 16 are formed. However, the present invention is not limited to this, and as shown in FIG. Metal film 3
In addition to 6, the metal film 50 is preferably provided on the back surface side of the semiconductor wafer 34 (semiconductor substrate 15). The metal film 50 provided on the back side may have the same configuration as the metal film 36 or may have a different configuration. In this case, the metal film 5
0 is preferably provided on the entire back surface of the semiconductor wafer 34 (semiconductor substrate 15).

After the metal films 36 and 50 are formed on the front and back surfaces of the semiconductor wafer 34 on which the drive circuit 12 is formed, the ink grooves 18 are formed by sandblasting, the ink supply holes 20 are formed, and dry etching is performed. If a processing step such as opening of the orifice 26 is performed, even if static electricity is generated by the processing, the generated charges are more efficiently grounded than in the case of coating the single-sided metal film 36 only on the surface. Therefore, the electrostatic breakdown of the drive circuit 12 can be more reliably prevented. The ink groove 18 and the ink supply hole 20
After the processing of the orifice 26, the semiconductor wafer 34
It is preferable that the metal film 50 formed on the back surface is removed by, for example, a process such as dry or wet etching. After processing, unnecessary portions of the metal film 36 on the front side may be removed by a similar process such as etching.

The semiconductor substrate 15 of the semiconductor chip 16
The excavation and drilling of the semiconductor chip 16 may be performed by sandblasting on one surface of the semiconductor chip 16, that is, on one of the front surface and the back surface, and may be performed simultaneously or on the semiconductor chip 16 from both sides. A hole may be formed halfway from one side of the chip and then completely opened from the other side.

The present invention is applicable to a recording head for a thermal ink jet printer using a semiconductor device regardless of the difference between monochrome and color.
In this case, any conventionally known various recording head structures such as a top shooter type (face inkjet) and a side shooter type (edge inkjet) can be used. Also, the number of orifice rows may be any, and the number of recording elements is not limited at all.

Further, the present invention is not limited to the recording head of a thermal type ink jet printer which discharges ink by heating as in the above-described embodiment, but uses a diaphragm (vibration) using a piezo element or electrostatic force. The ink jet printer can be applied to various conventionally known ink jet printers such as a pressure method of ejecting ink by vibrating a plate). In the present invention, a thermal type heating resistor, a pressure type piezo element, and the like are collectively expressed as an ink discharge unit.

Further, the present invention is not limited to a recording head of an ink jet printer, but may be applied to a semiconductor device in which an element formed as an integrated circuit on a semiconductor chip may be electrically destroyed by a process during manufacturing. Is equally applicable. As described above, the semiconductor device of the present invention and the method of manufacturing the same have been described in detail with reference to various embodiments. However, the present invention is not limited to the above-described embodiments, and various improvements can be made without departing from the gist of the present invention. Of course, you can make changes.

[0054]

As described in detail above, the present invention provides
A metal film formed on an integrated circuit or a bonding pad is grounded via a grounding pad formed on a semiconductor wafer, and a processing step of a semiconductor manufacturing process is performed. Thereby, according to the present invention, by a processing step such as sandblasting or dry etching,
An element formed in an integrated circuit of a semiconductor device can be prevented from being electrically destroyed, and the manufacturing yield of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an embodiment of a recording head of a thermal inkjet printer according to the present invention.

FIG. 2 is a layout sectional view of an embodiment of the recording head shown in FIG. 1;

FIG. 3 is a plan view conceptually showing one embodiment of the semiconductor device of the present invention.

FIG. 4 is a flowchart of one embodiment showing each step of the method for manufacturing a semiconductor device of the present invention.

FIGS. 5A to 5D are process diagrams showing cross sections taken along line AA of an embodiment of the semiconductor device in each process of the method for manufacturing a semiconductor device according to the present invention.

FIGS. 6A and 6B are process diagrams showing cross sections taken along line BB of one embodiment of the semiconductor device in each step of the method for manufacturing a semiconductor device according to the present invention.

FIG. 7 is a process diagram showing another cross section of one embodiment of the semiconductor device in another process of the method for manufacturing a semiconductor device of the present invention.

[Explanation of symbols]

 Reference Signs List 10 recording head 11 heating resistor 12 drive circuit 14 control circuit 15 semiconductor substrate 16 semiconductor chip 18, 24 ink groove 20 ink supply hole (through hole) 26 orifice 28 orifice plate 30 partition wall 34 semiconductor wafer 36, 50 metal film 36a, 36c Covering area 36b, 36d Extension area 36e Line area 37a TaSiO layer 37b Ni layer 38 Bonding pad 40 Scribe line 42 Grounding pad 44 Protective layer 46 Al wiring 48 Gold plating layer R1, R2,..., Rn Heating resistor T1, T2 ..., Tn driver transistor

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2C057 AF93 AG46 AG82 AG83 AG90 AG92 AK07 AP02 AP32 AP51 AP90 AQ02 BA13 5F033 HH07 HH08 HH13 HH18 HH19 HH20 HH21 HH30 HH35 PP27 PP28 QQ08 QQ11 QQ19 VQ73 VQ07V03 V03

Claims (7)

[Claims] 1. A semiconductor device in a state of a semiconductor chip formed as a recording head of an ink-jet printer, wherein the semiconductor chip includes at least an ink ejection unit,
An integrated circuit that constitutes a drive circuit for driving the ink discharge unit; a bonding pad; and a metal film that covers at least a part of an upper layer of the integrated circuit. A semiconductor device formed up to an end of the semiconductor device. 2. The semiconductor device according to claim 1, wherein the metal film further covers an upper layer of at least one of the bonding pads, and is formed from the bonding pad to an end of the semiconductor chip. Semiconductor devices. 3. A semiconductor device in a state of a semiconductor wafer, wherein the semiconductor wafer includes at least two semiconductor chips according to claim 1 and a region other than the semiconductor chips at a peripheral portion of the semiconductor wafer. And at least one ground pad formed of the metal film, wherein the metal film is also formed in a region between the semiconductor chips, and the metal film formed up to the end of all the semiconductor chips is A semiconductor device, wherein the semiconductor devices are connected to each other via a region between the semiconductor chips, and are also connected to the ground pad. 4. The ink discharge means is a heating resistor, the metal film is formed of the same material as the material of the heating resistor, and the recording head is a recording head of a thermal inkjet printer. The semiconductor device according to claim 1, wherein: 5. When manufacturing a semiconductor device in the form of a semiconductor wafer on which at least two semiconductor chips are formed, each of which is formed as a recording head of an ink-jet printer, at least a semiconductor substrate of each of the semiconductor chips is formed on the semiconductor substrate. Forming an integrated circuit constituting an ink discharge means and a drive circuit for driving the ink discharge means, covering at least a part of an upper layer of the integrated circuit of the semiconductor chip, and forming a corresponding one of the semiconductor chips from the integrated circuit. A metal film formed up to an end portion and connected to each other via a region between the semiconductor chips is formed, and the semiconductor film is formed in a region other than the semiconductor chip at a peripheral portion of the semiconductor wafer by the metal film. Forming at least one ground pad connected to the metal film via a region between the chips While grounding the metal film through the grounding pad,
A method for manufacturing a semiconductor device, comprising performing a processing step. 6. The ink discharge means is a heating resistor, the recording head is a recording head of a thermal ink jet printer, and the metal film forms the heating resistor after forming the driving circuit. 6. The method for manufacturing a semiconductor device according to claim 5, wherein, at the same time, the semiconductor device is formed using the material of the heating resistor. 7. The semiconductor device according to claim 5, wherein said metal film is also formed on a back surface side of said semiconductor wafer opposite to a side of said semiconductor chip on which said integrated circuit is formed. The manufacturing method of the semiconductor device described in the above.